JP2015090960A - Semiconductor package - Google Patents

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JP2015090960A
JP2015090960A JP2013231265A JP2013231265A JP2015090960A JP 2015090960 A JP2015090960 A JP 2015090960A JP 2013231265 A JP2013231265 A JP 2013231265A JP 2013231265 A JP2013231265 A JP 2013231265A JP 2015090960 A JP2015090960 A JP 2015090960A
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terminal
semiconductor package
mold resin
narrow
wide
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大岩　亨
Toru Oiwa
亨 大岩
弘晃 荻原
Hiroaki Ogiwara
弘晃 荻原
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Denso Corp
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Denso Corp
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Priority to JP2013231265A priority Critical patent/JP2015090960A/en
Priority to DE201410116175 priority patent/DE102014116175A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package which can make it unlikely to transfer an external force applied to a terminal to the inside of a resin.SOLUTION: A semiconductor package 100 comprises power elements 110, lead frames 120, a mold resin 140 and terminals 150. The lead frames 120 are electrically and thermally connected with the power elements 110. The mold resin 140 encapsulates the power elements 110 and the lead frames 120. Each of the terminals 150 is formed by a part of the lead frame 120 and partially protrudes from the mold resin 140 and has a narrow part 150A and a wide part 150B. The wide part 150B is arranged at least at a boundary part b with the mold resin 140 and the narrow part 150A is arranged between a bonding part s with an external terminal 200 and the boundary part b.

Description

本発明は、リードフレーム上にパワー素子を搭載して樹脂モールドした半導体パッケージに関する。   The present invention relates to a semiconductor package in which a power element is mounted on a lead frame and resin molded.

従来から、端子曲げ加工を前提としたＩＣモジュールにおいて、端子は狭幅部を備え、この狭幅部がモジュール本体の側面に位置するようにした構造が知られている（例えば、特許文献１参照）。側面に対応する位置に、端子の狭幅部を設けることにより、この狭幅部での端子の折曲げを容易にしている。   2. Description of the Related Art Conventionally, in an IC module premised on terminal bending, a structure has been known in which a terminal has a narrow width portion and the narrow width portion is positioned on a side surface of the module body (see, for example, Patent Document 1). ). By providing the narrow portion of the terminal at a position corresponding to the side surface, the terminal can be easily bent at the narrow portion.

特開平７−１４７２０５号公報JP 7-147205 A

ところで、特許文献１に開示されている構造では、幅狭部により端子が曲げやすくなる一方で樹脂端面に対応する位置が幅狭部となっているため、樹脂と端子（幅狭部）との境界部分の面積が小さくなり、これらの間の係合が不十分になるおそれがある。このため、端子に外力が加わったときに、面積が小さい狭幅部と境界部分とで外力を受けることになり、樹脂内部に外力が伝わりやすくなるという問題があった。   By the way, in the structure currently disclosed by patent document 1, since the terminal becomes easy to bend by a narrow part, while the position corresponding to a resin end surface is a narrow part, between resin and a terminal (narrow part) There is a possibility that the area of the boundary portion becomes small and the engagement between them becomes insufficient. For this reason, when an external force is applied to the terminal, the external force is received by the narrow portion having a small area and the boundary portion, and there is a problem that the external force is easily transmitted to the inside of the resin.

本発明は、このような点に鑑みて創作されたものであり、その目的は、端子に加わった外力を樹脂内部に伝えにくくすることができる半導体パッケージを提供することにある。   The present invention was created in view of the above points, and an object thereof is to provide a semiconductor package that can make it difficult to transmit an external force applied to a terminal to the inside of a resin.

上述した課題を解決するために、本発明の半導体パッケージは、パワー素子、リードフレーム、モールド樹脂、端子を備える。リードフレームは、パワー素子が電気的かつ熱的に接続されている。モールド樹脂は、パワー素子とリードフレームを封止する。端子は、リードフレームの一部によって形成され、モールド樹脂から部分的に突出するとともに幅狭部と幅広部を有し、少なくともモールド樹脂との境界部分に幅広部が配置され、外部端子との接合部と境界部分との間に幅狭部が配置されている。   In order to solve the above-described problems, a semiconductor package of the present invention includes a power element, a lead frame, a mold resin, and a terminal. The power element is electrically and thermally connected to the lead frame. The mold resin seals the power element and the lead frame. The terminal is formed by a part of the lead frame, partially protrudes from the mold resin, has a narrow part and a wide part, and the wide part is disposed at least at the boundary part with the mold resin, and is joined to the external terminal. A narrow portion is disposed between the portion and the boundary portion.

端子に外力が加わったときに、この外力が幅狭部を介して幅広部に伝わるため、面積が広い幅広部とモールド樹脂の境界部分とでこの応力を受けることができ、外力をモールド樹脂内部に伝えにくくすることができる。特に、幅広部よりも外側に幅狭部を配置することにより、端子に外力が加わったときにこの幅狭部が変形しやすくなるため、外力をモールド樹脂内部にさらに伝えにくくすることができる。   When an external force is applied to the terminal, this external force is transmitted to the wide part via the narrow part, so that this stress can be received at the wide part having a large area and the boundary part of the mold resin, and the external force is applied inside the mold resin. Can be difficult to tell. In particular, by arranging the narrow portion outside the wide portion, the narrow portion is easily deformed when an external force is applied to the terminal, so that the external force can be further prevented from being transmitted into the mold resin.

一実施形態の半導体パッケージの概略的な構造を示す図である。It is a figure which shows the schematic structure of the semiconductor package of one Embodiment. モールド樹脂から突出した端子の形状を示す斜視図である。It is a perspective view which shows the shape of the terminal protruded from mold resin. 端子の折り曲げ前の形状を示す図である。It is a figure which shows the shape before bending of a terminal. 端子と外部端子との接続状態を示す図である。It is a figure which shows the connection state of a terminal and an external terminal. 半導体パッケージが一部に用いられる車両用発電機の断面図を示す図である。It is a figure which shows sectional drawing of the generator for vehicles in which a semiconductor package is used for a part. 半導体パッケージが一部に用いられる車両用発電機の構成を示す図である。It is a figure which shows the structure of the generator for vehicles in which a semiconductor package is used for a part. 半導体パッケージとしての整流器モジュールの構成を示す図である。It is a figure which shows the structure of the rectifier module as a semiconductor package. 内部に貫通孔を設けた端子の変形例を示す図である。It is a figure which shows the modification of the terminal which provided the through-hole inside. 一方の幅広部の幅を他方の幅広部の幅よりも狭くした端子の変形例を示す図である。It is a figure which shows the modification of the terminal which made the width | variety of one wide part narrower than the width | variety of the other wide part. ジグを用いて端子を曲げ加工する説明図である。It is explanatory drawing which bends a terminal using a jig.

以下、本発明を適用した一実施形態の半導体パッケージについて、図面を参照しながら説明する。図１に示すように、一実施形態の半導体パッケージ１００は、パワー素子１１０と、これらのパワー素子１１０が電気的かつ熱的に接続されたリードフレーム１２０と、パワー素子１１０とリードフレーム１２０およびその他の周辺回路（例えば制御回路１３０等）を封止するモールド樹脂１４０と、リードフレーム１２０の一部によって形成されるとともにモールド樹脂１４０から部分的に突出した端子１５０とを含んで構成されている。   Hereinafter, a semiconductor package according to an embodiment to which the present invention is applied will be described with reference to the drawings. As shown in FIG. 1, a semiconductor package 100 according to an embodiment includes a power element 110, a lead frame 120 in which the power elements 110 are electrically and thermally connected, the power element 110, the lead frame 120, and others. The peripheral circuit (for example, the control circuit 130) is sealed, and the terminal 150 is formed by a part of the lead frame 120 and partially protrudes from the mold resin 140.

図２および図３に示すように、端子１５０は、幅狭部１５０Ａと幅広部１５０Ｂ、１５０Ｃを有する。少なくともモールド樹脂１４０との境界部分ｂに幅広部１５０Ｂが配置されている。また、外部端子２００との接合部ｓ（図４）と境界部分ｂとの間に幅狭部１５０Ａが配置されている。端子１５０の先端部１５０Ｄは、溶接によって形成される接合部ｓとして用いられ、幅狭部１５０Ａよりも狭い幅を有する。上述した幅狭部１５０Ａは、端子１５０の長手方向と垂直な向きに左右対称な円弧形状を有する（図３）。また、上述した幅広部１５０Ｂは、境界部分ｂから端子１５０の板厚ｔ（図２）以上であって幅広部１５０Ｂ、Ｃの板幅Ｗ（図３）以下の長さで連続している。   As shown in FIGS. 2 and 3, the terminal 150 has a narrow portion 150A and wide portions 150B and 150C. The wide portion 150B is disposed at least at the boundary b with the mold resin 140. Further, the narrow portion 150A is disposed between the joint portion s (FIG. 4) with the external terminal 200 and the boundary portion b. The tip 150D of the terminal 150 is used as a joint s formed by welding and has a narrower width than the narrow portion 150A. The narrow portion 150A described above has a circular arc shape that is symmetrical in the direction perpendicular to the longitudinal direction of the terminal 150 (FIG. 3). Further, the wide portion 150B described above is continuous from the boundary portion b with a length not less than the plate thickness t (FIG. 2) of the terminal 150 and not more than the plate width W (FIG. 3) of the wide portions 150B and C.

また、端子１５０は、リードフレーム１２０が延伸する面（図１では、紙面に平行な向きに延在する面）に対して直交する向き（紙面と垂直な向き）に、モジュール樹脂１４０の外部において曲げられた曲げ部１５０Ｅを有している（図２）。この曲げ部１５０Ｅは、上述した幅狭部１５０Ａの位置において形成されていることが望ましい。この場合には、幅狭部１５０Ａは、曲げ部１５０Ｅにおいて端子１５０の長手方向と垂直な向きに両側から切り欠いた円弧形状を有することが望ましい。   In addition, the terminals 150 are arranged outside the module resin 140 in a direction (direction perpendicular to the paper surface) orthogonal to a surface (a surface extending in a direction parallel to the paper surface in FIG. 1) on which the lead frame 120 extends. A bent portion 150E is bent (FIG. 2). The bent portion 150E is desirably formed at the position of the narrow portion 150A described above. In this case, it is desirable that the narrow portion 150A has an arc shape that is cut out from both sides in a direction perpendicular to the longitudinal direction of the terminal 150 in the bent portion 150E.

次に、上述した半導体パッケージ１００の好適な適用例を説明する。図５および図６に示す車両用発電機１は、２つの固定子巻線２、３、界磁巻線４、２つの整流器モジュール群５、６、界磁制御部７を含んで構成されている。   Next, a preferred application example of the semiconductor package 100 described above will be described. The vehicular generator 1 shown in FIGS. 5 and 6 includes two stator windings 2 and 3, a field winding 4, two rectifier module groups 5 and 6, and a field control unit 7.

一方の固定子巻線２は、三相巻線であって、固定子鉄心２１に巻装されている。同様に、他方の固定子巻線３は、三相巻線であって、上述した固定子鉄心２１に、固定子巻線２に対して電気角で３０度ずらした位置に巻装されている。本実施形態では、これら２つの固定子巻線２、３と固定子鉄心２１によって固定子２０が構成されている。   One stator winding 2 is a three-phase winding and is wound around the stator core 21. Similarly, the other stator winding 3 is a three-phase winding and is wound around the stator core 21 described above at a position shifted by 30 degrees in electrical angle with respect to the stator winding 2. . In the present embodiment, the stator 20 is constituted by the two stator windings 2 and 3 and the stator core 21.

界磁巻線４は、固定子鉄心２１の内周側に対向配置されたポールコア４１に巻装されて回転子４０を構成している。界磁巻線４に励磁電流を流すことにより、ポールコア４１が磁化される。ポールコア４１が磁化されたときに発生する回転磁界によって固定子巻線２、３が交流電圧を発生する。   The field winding 4 is wound around a pole core 41 disposed opposite to the inner peripheral side of the stator core 21 to constitute a rotor 40. The pole core 41 is magnetized by passing an exciting current through the field winding 4. The stator windings 2 and 3 generate an alternating voltage by a rotating magnetic field generated when the pole core 41 is magnetized.

一方の整流器モジュール群５は、一方の固定子巻線２に接続されており、全体で三相全波整流回路が構成され、固定子巻線２に誘起される交流電流を直流電流に変換する。この整流器モジュール群５は、固定子巻線２の相数に対応する数（３個）の整流器モジュール５Ｘ、５Ｙ、５Ｚを備えている。同様に、他方の整流器モジュール群６は、他方の固定子巻線３に接続されており、全体で三相全波整流回路が構成され、固定子巻線３に誘起される交流電流を直流電流に変換する。この整流器モジュール群６は、固定子巻線３の相数に対応する数（３個）の整流器モジュール６Ｕ、６Ｖ、６Ｗを備えている。   One rectifier module group 5 is connected to one stator winding 2 and constitutes a three-phase full-wave rectifier circuit as a whole, and converts an alternating current induced in the stator winding 2 into a direct current. . The rectifier module group 5 includes a number (three) of rectifier modules 5X, 5Y, and 5Z corresponding to the number of phases of the stator winding 2. Similarly, the other rectifier module group 6 is connected to the other stator winding 3 to form a three-phase full-wave rectifier circuit as a whole, and an alternating current induced in the stator winding 3 is converted into a direct current. Convert to The rectifier module group 6 includes a number (three) of rectifier modules 6U, 6V, and 6W corresponding to the number of phases of the stator winding 3.

界磁制御部７は、界磁巻線４に流す励磁電流を整流器モジュール群５、６の出力電圧に応じて制御しており、励磁電流を調整することにより車両用発電機１の出力電圧（各整流器モジュールの出力電圧）が調整電圧Ｖreg になるように制御する。   The field control unit 7 controls the excitation current flowing through the field winding 4 according to the output voltage of the rectifier module groups 5 and 6, and adjusts the excitation current to adjust the output voltage of each vehicle generator 1 (each rectifier). The output voltage of the module is controlled to the adjustment voltage Vreg.

上述した車両用発電機１に含まれる６個の整流器モジュール５Ｘ、５Ｙ、５Ｚ、６Ｕ、６Ｖ、６Ｗは、それぞれが本実施形態の半導体パッケージ１００に対応する。これら６個の整流器モジュール５Ｘ等は同じ構成を有しており、以下では整流器モジュール５Ｘについて説明を行い、他の整流器モジュール５Ｙ等についての説明は省略する。   Each of the six rectifier modules 5X, 5Y, 5Z, 6U, 6V, and 6W included in the vehicle generator 1 described above corresponds to the semiconductor package 100 of the present embodiment. These six rectifier modules 5X and the like have the same configuration. Hereinafter, the rectifier module 5X will be described, and description of the other rectifier modules 5Y and the like will be omitted.

図７に示すように、整流器モジュール５Ｘは、パワー素子１１０（図１）としての２つのＭＯＳトランジスタ１１０Ａ、１１０Ｂと、制御回路１３０とを備えている。一方のＭＯＳトランジスタ１１０Ａは、ソースがＰ端子を介して固定子巻線２のＸ相巻線に接続され、ドレインがＢ端子を介して充電線１２を介して電気負荷１０やバッテリ９の正極端子に接続された上アーム（ハイサイド側）のスイッチング素子である。他方のＭＯＳトランジスタ１１０Ｂは、ドレインがＰ端子を介してＸ相巻線に接続され、ソースがＥ端子を介してバッテリ９の負極端子（アース）に接続された下アーム（ローサイド側）のスイッチング素子である。制御回路１３０は、Ｘ相巻線の出力電圧を整流するために、２つのＭＯＳトランジスタ１１０Ａ、１１０Ｂをオンオフ制御する。   As shown in FIG. 7, the rectifier module 5X includes two MOS transistors 110A and 110B as a power element 110 (FIG. 1), and a control circuit 130. One MOS transistor 110A has a source connected to the X-phase winding of the stator winding 2 via the P terminal, and a drain connected to the positive terminal of the electric load 10 and the battery 9 via the charging line 12 via the B terminal. The switching element of the upper arm (high side side) connected to. The other MOS transistor 110B has a lower arm (low side) switching element whose drain is connected to the X-phase winding via the P terminal and whose source is connected to the negative terminal (earth) of the battery 9 via the E terminal. It is. The control circuit 130 performs on / off control of the two MOS transistors 110A and 110B in order to rectify the output voltage of the X-phase winding.

上述した整流器モジュール５ＸのＰ端子、Ｂ端子、Ｅ端子のそれぞれが本実施形態の半導体モジュール１００の端子１５０に対応する。Ｐ端子は、Ｘ相巻線の端部に設けられた外部端子２００に接続される。Ｂ端子は、例えば端子台（図示せず）に設けられた他の外部端子２００を介して充電線１２に接続される。Ｅ端子は、端子台に設けられたさらに他の外部端子２００を介してバッテリ９の負極端子に接続される。   Each of the P terminal, B terminal, and E terminal of the rectifier module 5X described above corresponds to the terminal 150 of the semiconductor module 100 of the present embodiment. The P terminal is connected to an external terminal 200 provided at the end of the X-phase winding. The B terminal is connected to the charging line 12 via another external terminal 200 provided on a terminal block (not shown), for example. The E terminal is connected to the negative terminal of the battery 9 through still another external terminal 200 provided on the terminal block.

このように、本実施形態の半導体パッケージ１００は、端子１５０に外力が加わったときに、この外力が幅狭部１５０Ａを介して幅広部１５０Ｂに伝わるため、面積が広い幅広部１５０Ｂとモールド樹脂１４０の境界部分ｂとでこの応力を受けることができ、外力をモールド樹脂１４０の内部に伝えにくくすることができる。特に、幅広部１５０Ｂよりも外側に幅狭部１５０Ａを配置することにより、端子１５０に外力が加わったときにこの幅狭部１５０Ａが変形しやすくなるため、外力をモールド樹脂１４０の内部にさらに伝えにくくすることができる。   Thus, in the semiconductor package 100 of this embodiment, when an external force is applied to the terminal 150, the external force is transmitted to the wide portion 150B via the narrow portion 150A. It is possible to receive this stress at the boundary portion b, and to make it difficult to transmit an external force to the inside of the mold resin 140. In particular, by arranging the narrow portion 150A on the outer side of the wide portion 150B, when the external force is applied to the terminal 150, the narrow portion 150A is easily deformed. Therefore, the external force is further transmitted to the inside of the mold resin 140. Can be difficult.

また、幅狭部１５０Ａを端子１５０の長手方向と垂直な向きに左右対称な形状とすることにより、幅狭部１５０Ａにおいて左右に偏った応力集中が生じることを防止することができ、均等な外力を幅広部に伝えることができる。特に、幅狭部１５０Ａを円弧形状とすることにより、端子１５０の板厚方向への偏った応力集中の発生を防止することができ、均等な外力を幅広部１５０Ｂに伝えることができる。   In addition, by forming the narrow portion 150A symmetrically in the direction perpendicular to the longitudinal direction of the terminal 150, it is possible to prevent the stress concentration biased to the left and right in the narrow portion 150A from occurring, and to achieve uniform external force. Can be transmitted to the wide section. In particular, by forming the narrow portion 150A into an arc shape, it is possible to prevent the occurrence of uneven stress concentration in the plate thickness direction of the terminal 150, and to transmit a uniform external force to the wide portion 150B.

また、リードフレーム１２０が延伸する面に対して直交する向きに、モールド樹脂１４０の外部において曲げられた曲げ部１５０Ｅが端子１５０に設けられているため、板厚ｔ方向に外力が伝わることを回避して板厚直角方向へ外力を加えることができるため、境界部分において幅広部１５０Ｂに作用する外力を低減することができる。   In addition, since a bent portion 150E that is bent outside the mold resin 140 is provided in the terminal 150 in a direction orthogonal to the surface on which the lead frame 120 extends, it is possible to prevent external force from being transmitted in the thickness t direction. Since an external force can be applied in the direction perpendicular to the plate thickness, the external force acting on the wide portion 150B at the boundary portion can be reduced.

また、曲げ部１５０Ｅに、端子１５０の長手方向と垂直な向きに両側から切り欠いた円弧形状の幅狭部１５０Ａを設けることにより、外力が加わったときに境界部分ｂ近傍の幅広部１５０Ｂにさらに外力が伝わりにくくすることができる。また、端子の曲げ加工をしやすくする利点もある。   Further, by providing the bent portion 150E with an arc-shaped narrow portion 150A cut out from both sides in a direction perpendicular to the longitudinal direction of the terminal 150, when an external force is applied, the wide portion 150B near the boundary portion b is further added. External force can be made difficult to be transmitted. In addition, there is an advantage that the terminal can be easily bent.

また、端子１５０の先端部１５０Ｄの幅を幅狭部１５０Ａよりも狭くしているため、端子先端の質量を小さくして端子１５０に加わる振動荷重を小さくすることができる。また、接合部ｓが小さくなるため、溶接の際の入力エネルギーを少なくして、端子１５０からモールド樹脂１４０に伝わる熱量を減らしてモールド樹脂１４０の温度上昇を抑えることができ、モールド樹脂１４０へのストレスを低減することができる。   Further, since the width of the tip portion 150D of the terminal 150 is narrower than the narrow portion 150A, the mass at the tip of the terminal can be reduced and the vibration load applied to the terminal 150 can be reduced. Further, since the joint portion s becomes small, the input energy at the time of welding can be reduced, the amount of heat transmitted from the terminal 150 to the mold resin 140 can be reduced, and the temperature rise of the mold resin 140 can be suppressed. Stress can be reduced.

また、モールド樹脂１４０の境界部分ｂから突出する幅広部１５０Ｂを、境界部分ｂから板厚ｔ以上であって板幅Ｗ以下連続させている。板厚ｔ以上の長さを確保することで、この間をジグで押さえて曲げ加工することが可能となる（図１０）。幅広部１５０Ｂの長さが極端に短い（板厚ｔ以下）と、ジグの厚さが薄くなるため、ジグで押さえきれなくなる。ジグが変形したり、そもそもジグスペースがとれないので、幅狭部１５０Ａに生じた応力集中の影響がモールド樹脂１４０にも及ぶおそれがある。一方、幅広部１５０Ｂの長さが長くなる（板幅Ｗ以上）と端子１５０が大型化して質量も増加する。これに対し、幅広部１５０Ｂを長さを適切に設定（板厚ｔ以上であって板幅Ｗ以下）することにより、これらの不具合を回避することができる。   Further, the wide portion 150B protruding from the boundary portion b of the mold resin 140 is continuous from the boundary portion b to a plate thickness t or more and a plate width W or less. By securing a length equal to or greater than the plate thickness t, it is possible to perform bending by pressing the gap with a jig (FIG. 10). If the length of the wide portion 150B is extremely short (thickness t or less), the thickness of the jig becomes thin, so that it cannot be pressed by the jig. Since the jig is deformed or the jig space cannot be taken in the first place, the stress concentration generated in the narrow portion 150A may be affected by the mold resin 140 as well. On the other hand, when the length of the wide portion 150B is increased (plate width W or more), the terminal 150 is increased in size and the mass is increased. On the other hand, these problems can be avoided by appropriately setting the length of the wide portion 150B (more than the plate thickness t and less than the plate width W).

なお、本発明は上記実施形態に限定されるものではなく、本発明の要旨の範囲内において種々の変形実施が可能である。上述した実施形態では、整流器モジュール５Ｘ等を半導体パッケージ１００を用いて実現する適用例について説明したが、他の半導体パッケージに本発明を適用してもよい。例えば、界磁制御部７にも、界磁巻線４に対する励磁電流の供給を断続するパワー素子（例えばＭＯＳトランジスタ）と、その断続タイミング等を制御する制御回路が備わっており、この界磁制御部７を半導体パッケージ１００の構造を用いて実現するようにしてもよい。また、半導体パッケージ１００の適用例は車両用発電機１に限定されず、少なくとも１つのパワー素子を含む他の半導体パッケージにに本発明を適用するようにしてもよい。   In addition, this invention is not limited to the said embodiment, A various deformation | transformation implementation is possible within the range of the summary of this invention. In the above-described embodiment, the application example in which the rectifier module 5X and the like are realized using the semiconductor package 100 has been described. However, the present invention may be applied to other semiconductor packages. For example, the field control unit 7 is also provided with a power element (for example, a MOS transistor) for intermittently supplying the exciting current to the field winding 4 and a control circuit for controlling the intermittent timing. You may make it implement | achieve using the structure of the package 100. FIG. Further, the application example of the semiconductor package 100 is not limited to the vehicular generator 1, and the present invention may be applied to other semiconductor packages including at least one power element.

また、上述した実施形態では、端子１５０の幅狭部１５０Ａを円弧（半円）形状としたが、それ以外の形状としてもよい。例えば、円弧以外の曲線で端子１５０の一部を外側から切り欠いた形状としたり、一部に直線を含む形状としてもよい。また、必ずしも端子１５０の一部を外側から切り欠いて幅狭部１５０Ａとするのではなく、図８に示すように、内部に貫通孔を設けることで幅狭部を形成するようにしてもよい。   In the above-described embodiment, the narrow portion 150A of the terminal 150 has an arc (semicircle) shape, but may have another shape. For example, a part of the terminal 150 may be cut out from the outside with a curve other than an arc, or a part may include a straight line. In addition, a part of the terminal 150 is not necessarily cut out from the outside to form the narrow part 150A, but the narrow part may be formed by providing a through hole inside as shown in FIG. .

また、上述した実施形態では、端子１５０の幅広部１５０Ｂ、１５０Ｃを同一の幅Ｗとしたが、これらの幅を異ならせるようにしてもよい。例えば、図９に示すように、幅広部１５０Ｃの幅を幅広部１５０Ｂの幅よりも狭くして、端子１５０全体を軽くするようにしてもよい。   In the embodiment described above, the wide portions 150B and 150C of the terminal 150 are set to the same width W. However, these widths may be varied. For example, as shown in FIG. 9, the width of the wide portion 150C may be narrower than the width of the wide portion 150B, and the entire terminal 150 may be lightened.

上述したように、本発明によれば、端子に外力が加わったときに、この外力が幅狭部を介して幅広部に伝わるため、面積が広い幅広部とモールド樹脂の境界部分とでこの応力を受けることができ、外力をモールド樹脂内部に伝えにくくすることができる。   As described above, according to the present invention, when an external force is applied to the terminal, the external force is transmitted to the wide portion through the narrow portion, so this stress is generated between the wide portion having a large area and the boundary portion of the mold resin. The external force can be made difficult to be transmitted to the inside of the mold resin.

１１０ パワー素子
１２０ リードフレーム
１４０ モールド樹脂
１５０ 端子
１５０Ａ 幅狭部
１５０Ｂ 幅広部
１５０Ｅ 曲げ部
１５０Ｄ 先端部
２００ 外部端子 110 Power element 120 Lead frame 140 Mold resin 150 Terminal 150A Narrow part 150B Wide part 150E Bend part 150D Tip part 200 External terminal

Claims (7)

パワー素子（１１０）と、
前記パワー素子が電気的かつ熱的に接続されたリードフレーム（１２０）と、
前記パワー素子と前記リードフレームを封止するモールド樹脂（１４０）と、
前記リードフレームの一部によって形成され、前記モールド樹脂から部分的に突出するとともに幅狭部（１５０Ａ）と幅広部（１５０Ｂ）を有し、少なくとも前記モールド樹脂との境界部分に前記幅広部が配置され、外部端子（２００）との接合部と前記境界部分との間に前記幅狭部が配置された端子（１５０）と、
を備えることを特徴とする半導体パッケージ。 A power element (110);
A lead frame (120) to which the power elements are electrically and thermally connected;
A mold resin (140) for sealing the power element and the lead frame;
It is formed by a part of the lead frame, partially protrudes from the mold resin, has a narrow part (150A) and a wide part (150B), and the wide part is disposed at least at the boundary part with the mold resin. A terminal (150) in which the narrow portion is disposed between a joint portion with the external terminal (200) and the boundary portion;
A semiconductor package comprising: 請求項１において、
前記幅狭部は、前記端子の長手方向と垂直な向きに左右対称形状を有することを特徴とする半導体パッケージ。 In claim 1,
The semiconductor package according to claim 1, wherein the narrow portion has a symmetrical shape in a direction perpendicular to a longitudinal direction of the terminal. 請求項２において、
前記幅狭部は、円弧形状を有することを特徴とする半導体パッケージ。 In claim 2,
The semiconductor package, wherein the narrow portion has an arc shape. 請求項１〜３のいずれか一項において、
前記端子は、前記リードフレームが延伸する面に対して直交する向きに、前記モジュール樹脂の外部において曲げられた曲げ部（１５０Ｅ）を有することを特徴とする半導体パッケージ。 In any one of Claims 1-3,
The semiconductor package according to claim 1, wherein the terminal has a bent portion (150E) bent outside the module resin in a direction orthogonal to a surface on which the lead frame extends. 請求項４において、
前記幅狭部は、前記曲げ部において前記端子の長手方向と垂直な向きに両側から切り欠いた円弧形状を有することを特徴とする半導体パッケージ。 In claim 4,
The semiconductor package according to claim 1, wherein the narrow portion has an arc shape cut out from both sides in a direction perpendicular to a longitudinal direction of the terminal in the bent portion. 請求項１〜５のいずれか一項において、
前記端子の先端部（１５０Ｄ）は、溶接によって形成される前記接合部として用いられ、前記幅狭部よりも狭い幅を有することを特徴とする半導体パッケージ。 In any one of Claims 1-5,
The semiconductor package is characterized in that a tip end portion (150D) of the terminal is used as the joining portion formed by welding and has a width narrower than the narrow portion. 請求項１〜６のいずれか一項において、
前記幅広部は、前記境界部分から板厚以上であって板幅以下連続することを特徴とする半導体パッケージ。 In any one of Claims 1-6,
The wide package has a thickness greater than or equal to a plate thickness and less than or equal to a plate width from the boundary portion.
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