JP2015012177A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 103
- 239000002184 metal Substances 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 49
- 150000004767 nitrides Chemical class 0.000 claims abstract description 46
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 16
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 263
- 230000015556 catabolic process Effects 0.000 description 19
- 238000000137 annealing Methods 0.000 description 13
- 230000005684 electric field Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 at least one of Ta Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明は、窒化物半導体層18の上面にTi又はTaを含む第1電極22を形成する第1工程と、第1電極22の上面にAlを含む第2電極24を形成する第2工程と、第2電極24の上面の端及び第2電極24の側面の少なくとも一方を覆い、前記端から離間した領域の第2電極24の上面を露出する窓26aを有し、Ta、Mo、Pd、Ni及びTiの少なくとも一つを含む被覆金属層26を形成する第3工程と、第3工程の後、熱処理を実施する工程と、を有する半導体装置の製造方法である。
【選択図】図3
Description
Effect Transistor)は、携帯電話基地局用増幅器等の高周波且つ高出力で動作する増幅器として注目されている。また、窒化物半導体を用いたHEMTを高電圧動作させた場合に生じる電流コラプスを抑制する手法が開発されている(例えば、特許文献1参照)。
Organic Chemical Vapor Deposition)法を用いることができる。窒化物半導体層18上に、オーミック電極20を形成すべき領域に開口を有するレジスト膜40を形成する。図2(b)のように、レジスト膜40をマスクとして、例えば蒸着法を用いて、Ta層42、Al層44、Ta層46を順に堆積する。図2(c)のように、リフトオフによってレジスト膜40を除去した後、Al層44の上面の周辺に形成されたTa層46を覆い、その他の領域に形成されたTa層46を露出させるレジスト膜48を形成する。
Chemical Vapor Deposition)法を用いて形成することができる。図4(b)のように、層間絶縁膜32上に、オーミック電極20上に開口を有するレジスト膜50を形成する。レジスト膜50をマスクとして、層間絶縁膜32をエッチングによって除去する。これにより、オーミック電極20上の層間絶縁膜32に開口52が形成される。層間絶縁膜32の除去は、ドライエッチングを用いてもよいし、ウエットエッチングを用いてもよい。図4(c)のように、開口52内に、例えば蒸着法及びリフトオフ法、又はめっき法を用いて、配線層34を形成する。以上の工程を含んで実施例1に係る半導体装置が形成される。
12 電子走行層
14 電子供給層
16 キャップ層
18 窒化物半導体層
20、20a、20b、20c オーミック電極
22 第1電極
24 第2電極
25 高抵抗領域
26、27、28 被覆金属層
30 ゲート電極
32 層間絶縁膜
34 配線層
40、48、50、60、62、64 レジスト膜
42 Ta層
44 Al層
46 Ta層
54、58 オーミック電極
56 ヒロック
Claims (8)
- 窒化物半導体層の上面にTi又はTaを含む第1電極を形成する第1工程と、
前記第1電極の上面にAlを含む第2電極を形成する第2工程と、
前記第2電極の上面の端及び第2電極の側面の少なくとも一方を覆い、前記端から離間した領域の前記第2電極の上面を露出する窓を有し、Ta、Mo、Pd、Ni及びTiの少なくとも一つを含む被覆金属層を形成する第3工程と、
前記第3工程の後、熱処理を実施する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第1電極、前記第2電極、及び前記被覆金属層を備えた構造は、ゲート電極に隣接して配置されたソース電極及びドレイン電極の少なくとも一方を構成してなり、前記被覆金属層は、前記ゲート電極に近い側の前記第2電極の上面の端及び側面の少なくとも一方に配置されてなることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記被覆金属層は、前記第2電極の上面の端及び前記第2電極の側面の両方に設けられることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第2電極の上面の端を覆う前記被覆金属層と、前記第2電極の側面を覆う前記被覆金属層とは、電気的に接続されてなることを特徴とする請求項3記載の半導体装置の製造方法。
- 前記第2電極の上面の端を覆う前記被覆金属層と、前記第2電極の側面を覆う前記被覆金属層とは、同じ材料によって構成されてなることを特徴とする請求項3または4記載の半導体装置の製造方法。
- 前記窒化物半導体層は、窒化ガリウム又は窒化アルミニウムガリウムであり、前記熱処理は500℃以上800℃以下で行うことを特徴とする請求項1から5いずれか記載の半導体装置の製造方法。
- 窒化物半導体層の上面に設けられたTi又はTaを含む第1電極と、
前記第1電極の上面に設けられたAlを含む第2電極と、
前記第2電極の上面の端及び前記第2電極の側面の少なくとも一方を覆い、前記端から離間した領域に窓を備え、Ta、Mo、Pd、Ni及びTiの少なくとも一つを含む被覆金属層と、
前記被覆金属層が設けられた領域に対応し、前記窒化物半導体層と前記第1電極とのコンタクト抵抗が、前記窓が設けられた領域に比べて高い高抵抗領域と、を有することを特徴とする半導体装置。 - 窒化物半導体層の上面に設けられたTi又はTaを含む第1電極と、
前記第1電極の上面に設けられたAlを含む第2電極と、
前記第2電極の上面の端及び前記第2電極の側面の少なくとも一方を覆い、前記端から離間した領域に窓を備え、Ta、Mo、Pd、Ni及びTiの少なくとも一つを含む被覆金属層と、
前記被覆金属層上に設けられた絶縁膜と、を有することを特徴とする半導体装置。
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