JP2014524513A - 赤色発光窒化物系カルシウム安定化蛍光体 - Google Patents
赤色発光窒化物系カルシウム安定化蛍光体 Download PDFInfo
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- JP2014524513A JP2014524513A JP2014527372A JP2014527372A JP2014524513A JP 2014524513 A JP2014524513 A JP 2014524513A JP 2014527372 A JP2014527372 A JP 2014527372A JP 2014527372 A JP2014527372 A JP 2014527372A JP 2014524513 A JP2014524513 A JP 2014524513A
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- emitting phosphor
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 188
- 229910052791 calcium Inorganic materials 0.000 title claims abstract description 109
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 58
- 239000011575 calcium Substances 0.000 title description 126
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 title description 73
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 24
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 19
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 15
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 14
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 11
- 229910052788 barium Inorganic materials 0.000 claims abstract description 11
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 10
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 10
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 7
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 6
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 238000005424 photoluminescence Methods 0.000 claims description 20
- 230000005284 excitation Effects 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 9
- 230000032683 aging Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 31
- 238000006467 substitution reaction Methods 0.000 description 28
- 150000001768 cations Chemical class 0.000 description 25
- 230000008859 change Effects 0.000 description 24
- 238000012360 testing method Methods 0.000 description 24
- 238000002441 X-ray diffraction Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 238000004020 luminiscence type Methods 0.000 description 14
- 150000001669 calcium Chemical class 0.000 description 13
- 238000000295 emission spectrum Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ZQBZAOZWBKABNC-UHFFFAOYSA-N [P].[Ca] Chemical class [P].[Ca] ZQBZAOZWBKABNC-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- -1 emission intensity Chemical compound 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000012190 activator Substances 0.000 description 3
- 229910052789 astatine Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910016655 EuF 3 Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 241000083879 Polyommatus icarus Species 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- VAWSWDPVUFTPQO-UHFFFAOYSA-N calcium strontium Chemical compound [Ca].[Sr] VAWSWDPVUFTPQO-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H01L33/50—Wavelength conversion elements
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
表1A、1B、2A、2B、3A、3B、4A及び4Bを参照して以下に詳細に説明するように、15種類の異なる蛍光体サンプルを調製した。サンプルについて、以下に詳細に説明するように、PLスペクトル、CIE座標、XRD、及びSEMデータを収集した。
米国を含む多くの国では、規制機関が、LEDランプの代替としての性能基準を設定している。例えば、US Environmental Protection Agency(EPA)は、US Department of Energy(DOE)と共に性能面の仕様を発表しており、その下で、ランプを「ENERGY STAR(登録商標)」適合製品と指定でき、例えば、電力消費要件、最小光出力要件、光度分布要件、発光効率要件、平均寿命などを区別する。ENERGY STAR(登録商標)の「Program Requirements for Integral LED Lamps」では、全てのLEDランプについて、「最小光束維持試験期間(6000時間)にわたって色度の変化が、CIE 1976(u’,v’)図上で0.007以内でなくてはならず」、ランプの種類に応じて、ランプは「15,000時間又は25,000時間の作動において、≧70%の光束維持(L70)」を有していなくてはならないことが要件である。ENERGY STAR(登録商標)要件はランプ性能に対するものであり、LED、蛍光体、電子ドライバ回路、光学素子、及び機械的構成要素などのランプの全ての構成要素を包含する。主には、白色LEDの経年的な輝度の劣化の原因は、蛍光体だけではなく、青色LEDチップである場合がある。劣化の更なる要因は、実装材料(例えば基材)、ボンドワイヤ、及びシリコーンで封入されているその他構成要素によってもたらされる場合がある。対照的に、色座標中の変化に影響する要因は、主に蛍光体の劣化によるものが優位である。蛍光体性能に関しては、ENERGY STAR(登録商標)要件に適合するためには、85℃かつ85%相対湿度における加速試験下の蛍光体について、1000時間にわたって各座標での色度(CIE Δx、CIE Δy)の変化が≦0.01であることが必要とされると考えられる。加速試験は、蛍光体をコーティングした2727℃(3000K)の白色LED(蛍光体粒子をエポキシ又はシリコーンなどのバインダーと混合し、次にLEDチップに適用することによって調製)について行われる。コーティングされたLEDを、特定温度かつ湿度のオーブン内に置き、試験期間中継続的に操作する。
図11〜14は、本発明の赤色発光窒化物系蛍光体のXRDパターンを示し、サンプル1のXRDパターンを比較のために示す。
図15〜17は、本発明のいくつかの実施形態による調製された状態の赤色発光窒化物系カルシウム安定化蛍光体サンプル3(図16)(追加カルシウム)及びサンプル7(図17)(置換カルシウム)の二次電子顕微鏡写真を示し、従来技術の赤色発光窒化物系2−5−8蛍光体サンプル1(図15)を比較のために示す。図15〜17は全て、3を超える高アスペクト比(長さ対幅)の一部の粒子を示す。更に、図15〜17を比較すると、高アスペクト比の粒子の割合が、本発明の蛍光体のサンプルよりも、対照(図15)で高いことが示唆される。
本明細書に記載される各実施例及び比較実施例について、出発物質は、Si3N4、AlN、Ca3N2、Sr3N2、BN、GaN、SiO2、Al2O3、及びEuCl3のうち、少なくとも1つの化合物を含んだ。
サンプル1〜5に例示される蛍光体の所望の組成物を得るために、表1Aに記載の組成に従って固体粉末を秤量した。次に、この原材料の混合物を、ミルビーズと共にミル用プラスチックボトルに入れ、グローブボックス内に密封した後、ボールミルプロセスを約2時間行った。続いて、混合された粉末を、内径30mm、高さ30mmのモリブデン製るつぼに入れ、投入したるつぼをモリブデン製の蓋で覆って、グラファイトヒーターを備えたガス焼結炉に置いた。
サンプル6〜8の蛍光体の所望の組成物を得るために、表2Aに記載の組成に従って固体粉末を秤量した。サンプル1〜5で用いたものと同じ合成手順を使用した。試験結果を表2Bに示す。
サンプル9〜12の蛍光体の所望の組成物を得るために、表3Aに記載の組成に従って固体粉末を秤量した。サンプル1〜5で用いたものと同じ合成手順を使用した。試験結果を表3Bに示す。
サンプル13〜15の蛍光体の所望の組成物を得るために、表4Aに記載の組成に従って固体粉末を秤量した。サンプル1〜5で用いたものと同じ合成手順を使用した。試験結果を表4Bに示す。
Claims (30)
- 化学式MaSrbSicAldNeEufで表され、式中、
Mが、Mg、Ca、Sr、Ba、Y、Li、Na、K及びZnのうち少なくとも1つであり、0<a<1.0であり、
1.5<b<2.5であり、
4.0≦c≦5.0であり、
0≦d≦1.0であり、
7.5<e<8.5であり、
0<f<0.1であり、
更に、a+b+f>2+d/vであり、vがMの価数である、窒化物系組成を有する赤色発光蛍光体。 - F、Cl、Br及びOのうち少なくとも1つを更に有する、請求項1に記載の赤色発光蛍光体。
- MがCaであり、d=0であり、0.1≦a≦0.4である、請求項1又は2に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、
Eu0.05Ca0.1Sr1.95Si5N8、
Eu0.05Ca0.2Sr1.95Si5N8、
Eu0.05Ca0.3Sr1.95Si5N8、及び
Eu0.05Ca0.4Sr1.95Si5N8からなる群から選択される、請求項3に記載の赤色発光蛍光体。 - 前記赤色発光蛍光体が、約200nm〜約550nmの範囲の波長の放射線を吸収して、620.0nmを超えるフォトルミネセンスピーク発光波長の光を発する、請求項3に記載の赤色発光蛍光体。
- MがCaであり、0.1≦d≦0.15であり、0.1≦a≦0.4である、請求項1又は2に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、
Eu0.05Ca0.1Sr1.95Si4.9Al0.1N8、
Eu0.05Ca0.2Sr1.95Si4.9Al0.1N8、
Eu0.05Ca0.3Sr1.95Si4.9Al0.1N8、
Eu0.05Ca0.4Sr1.95Si4.9Al0.1N8、
Eu0.05Ca0.1Sr1.95Si4.88Al0.12N8、及び
Eu0.05Ca0.2Sr1.95Si4.88Al0.12N8からなる群から選択される、請求項6に記載の赤色発光蛍光体。 - 前記赤色発光蛍光体が、青色LEDによる励起下において、約85℃かつ約85%湿度における経年劣化800時間後のフォトルミネセンス強度の低下が約15%以下であるように構成される、請求項6に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、約85℃かつ約85%相対湿度における経年劣化800時間後の色度座標の変化CIE Δx及びCIE Δyが各座標について約0.015以下であるように構成される、請求項6に記載の赤色発光蛍光体。
- 前記色度座標の変化CIE Δx及びCIE Δyが、各座標について約0.005以下である、請求項9に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、約200nm〜約550nmの範囲の波長の放射線を吸収して、620.0nmを超えるフォトルミネセンスピーク発光波長の光を発する、請求項6に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、M及びAlが内部に含まれるSr2Si5N8:Euの一般結晶構造を有する、請求項1に記載の赤色発光蛍光体。
- Alが前記一般結晶構造内のSiを置換し、Mが前記一般結晶構造内の実質的に格子間位置に存在する、請求項12に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、Ca、Sr、Si、Al、N、Eu、並びにF、Cl、Br及びOのうち少なくとも1つからなる、請求項1に記載の赤色発光蛍光体。
- 化学式MxM’2Si5−yAlyN8:Aで表され、式中、
Mが、Mg、Ca、Sr、Ba、Y及びLiのうち少なくとも1つであり、x>0であり、
M’が、Mg、Ca、Sr、Ba、Y及びLiのうち少なくとも1つであり、
0≦y≦1であり、
Aが、Eu、Ce、Tb、Pr、Sm及びMnのうち少なくとも1つであり、
更にx>y/vであり、vがMの価数である窒化物系組成を有する赤色発光蛍光体であって、M’2Si5N8Aの一般結晶構造を有する、赤色発光蛍光体。 - MがM’と同じである、請求項15に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、約200nm〜約550nmの範囲の波長の放射線を吸収して、620.0nmを超えるフォトルミネセンスピーク発光波長の光を発する、請求項15又は16に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、約85℃かつ約85%相対湿度における経年劣化800時間後の色度座標の変化CIE Δx及びCIE Δyが各座標について約0.015以下であるように構成される、請求項15に記載の赤色発光蛍光体。
- 前記色度座標の変化CIE Δx及びCIE Δyが、各座標について約0.005以下である、請求項18に記載の赤色発光蛍光体。
- F、Cl、Br及びOのうち少なくとも1つを更に有する、請求項15に記載の赤色発光蛍光体。
- 前記赤色発光蛍光体が、Ca、Sr、Si、Al、N、Eu、並びにF、Cl、Br及びOのうち少なくとも1つからなる、請求項15に記載の赤色発光蛍光体。
- M’がSrである、請求項15に記載の赤色発光蛍光体。
- MがCaである、請求項22に記載の赤色発光蛍光体。
- REがEuである、請求項15に記載の赤色発光蛍光体。
- y=0であり、0.1≦x≦0.4である、請求項15に記載の赤色発光蛍光体。
- 0.1≦y≦0.15であり、0.1≦x≦0.4である、請求項15に記載の赤色発光蛍光体。
- 200nm〜480nmの範囲内の発光波長を有する固体励起源と、
該励起源からの励起放射線を吸収して、約620nm〜約650nmの範囲のピーク発光波長を有する光を発するように構成される、請求項1に記載の赤色発光蛍光体と、
約500nm〜約580nmの範囲のピーク発光波長を有する黄色/緑色発光蛍光体と、を含む、白色発光素子。 - 前記赤色発光蛍光体が、前記励起源からの励起放射線を吸収して、約624nm〜約632nmの範囲のピーク発光波長を有する光を発するように構成される、請求項27に記載の白色発光素子。
- 前記赤色発光蛍光体が、式Eu0.05Ca0.1Sr1.95Si4.88Al0.12N8を有する、請求項26又は27に記載の白色発光素子。
- 前記励起源が、450nm〜470nmの範囲内の発光波長を有する、請求項27に記載の白色発光素子。
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Also Published As
Publication number | Publication date |
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US20140084783A1 (en) | 2014-03-27 |
US9260659B2 (en) | 2016-02-16 |
TW201441342A (zh) | 2014-11-01 |
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EP2732007B1 (en) | 2017-05-31 |
JP5735179B2 (ja) | 2015-06-17 |
CN105154079B (zh) | 2017-03-08 |
JP6305370B2 (ja) | 2018-04-04 |
CN105154079A (zh) | 2015-12-16 |
US8597545B1 (en) | 2013-12-03 |
KR101424236B1 (ko) | 2014-07-28 |
CN103703101B (zh) | 2015-09-16 |
EP2732007A1 (en) | 2014-05-21 |
JP2015157956A (ja) | 2015-09-03 |
CN103703101A (zh) | 2014-04-02 |
US20160264863A1 (en) | 2016-09-15 |
TWI540199B (zh) | 2016-07-01 |
TW201406928A (zh) | 2014-02-16 |
KR20140028085A (ko) | 2014-03-07 |
WO2014014975A8 (en) | 2014-04-17 |
US10174246B2 (en) | 2019-01-08 |
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WO2014014975A1 (en) | 2014-01-23 |
TWI450945B (zh) | 2014-09-01 |
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