JP2014500629A - 発光ダイオードチップ及びそれを製造する方法 - Google Patents
発光ダイオードチップ及びそれを製造する方法 Download PDFInfo
- Publication number
- JP2014500629A JP2014500629A JP2013545995A JP2013545995A JP2014500629A JP 2014500629 A JP2014500629 A JP 2014500629A JP 2013545995 A JP2013545995 A JP 2013545995A JP 2013545995 A JP2013545995 A JP 2013545995A JP 2014500629 A JP2014500629 A JP 2014500629A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- dielectric
- light
- emitting diode
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 230000003287 optical effect Effects 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000002310 reflectometry Methods 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 152
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000869 ion-assisted deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【選択図】図1
Description
Claims (20)
- 基板と、
該基板の上部に位置し、第1の導電型半導体層、第2の導電型半導体層、及び前記第1の導電型半導体層と第2の導電型半導体層との間に介在した活性層を含む発光構造体と、
前記基板の下部に位置する交互積層下部構造体とを含み、
前記下部構造体は、それぞれ高屈折率の第1の材料層及び低屈折率の第2の材料層を含む複数の誘電体ペアを含み、
前記複数の誘電体ペアは、
可視光領域の中心波長に対して、いずれもλ/4より小さい光学厚さを有する第1の材料層及び第2の材料層からなる複数の第1の誘電体ペアと、
第1の材料層及び第2の材料層のうち一つはλ/4より小さい光学厚さを有し、残りの一つはλ/4より大きい光学厚さを有する第1の材料層及び第2の材料層からなる少なくとも一つの第2の誘電体ペアと、
いずれもλ/4より大きい光学厚さを有する第1の材料層及び第2の材料層からなる複数の第3の誘電体ペアとを含む
発光ダイオードチップ。 - 前記複数の第1の誘電体ペアは、前記複数の第3の誘電体ペアに比べて相対的に前記基板により近くに位置したり、前記基板からより遠くに位置する、請求項1に記載の発光ダイオードチップ。
- 前記少なくとも一つの第2の誘電体ペアは前記下部構造体の中央付近に配置される、請求項2に記載の発光ダイオードチップ。
- 前記複数の第1の誘電体ペアのうち少なくとも過半数は、前記基板に最も近い第2の誘電体ペアに比べて前記基板により近くに位置し、
前記複数の第3の誘電体ペアのうち少なくとも過半数は、前記基板から最も遠い第2の誘電体ペアに比べて前記基板からより遠くに位置する、請求項1に記載の発光ダイオードチップ。 - 前記複数の第1の誘電体ペアのうち80%以上のペアは、前記基板に最も近い第2の誘電体ペアに比べて前記基板により近くに位置し、
前記複数の第3の誘電体ペアのうち80%以上のペアは、前記基板から最も遠い第2の誘電体ペアに比べて前記基板からより遠くに位置する、請求項4に記載の発光ダイオードチップ。 - 前記複数の第1の誘電体ペアは、前記複数の第3の誘電体ペアに比べて前記基板により近くに位置する、請求項4に記載の発光ダイオードチップ。
- 前記複数の第3の誘電体ペアのうち少なくとも過半数は、前記基板に最も近い第2の誘電体ペアに比べて前記基板により近くに位置し、
前記複数の第1の誘電体ペアのうち少なくとも過半数は、前記基板から最も遠い第2の誘電体ペアに比べて前記基板からより遠くに位置する、請求項1に記載の発光ダイオードチップ。 - 前記複数の第1の誘電体ペアは、前記複数の第3の誘電体ペアに比べて前記基板からより遠くに位置する、請求項7に記載の発光ダイオードチップ。
- 前記発光構造体の上部に位置し、前記活性層で生成された光を透過させるとと同時に、前記活性層で生成された光の波長より長波長である可視光線領域のうち少なくとも一部領域内の光を反射させる交互積層上部構造体をさらに含む、請求項1に記載の発光ダイオードチップ。
- 前記活性層で生成された光に対する前記上部構造体の透過率は90%以上である、請求項9に記載の発光ダイオードチップ。
- 前記第2の導電型半導体層に電気的に接続する電極パッドと、
前記第2の導電型半導体層と前記電極パッドとの間に介在した交互積層アンダー構造体とをさらに含み、
前記交互積層アンダー構造体は、前記活性層で生成された光を反射させる、請求項9に記載の発光ダイオードチップ。 - 前記下部構造体の下側に位置する金属反射器をさらに含む、請求項11に記載の発光ダイオードチップ。
- 前記下部構造体又は前記下部構造体と前記金属反射器との組み合わせは、前記活性層で生成されて0〜60度の入射角で入射する光に対して90%以上の反射率を示す、請求項12に記載の発光ダイオードチップ。
- 基板の上部に少なくとも一つの発光構造体を含む基板を準備し、
前記基板の下部面に交互積層下部構造体を形成する発光ダイオードチップの製造方法であって、
前記下部構造体は、それぞれ高屈折率の第1の材料層及び低屈折率の第2の材料層を含む複数の誘電体ペアを含み、
前記複数の誘電体ペアは、可視光領域の中心波長に対して、いずれもλ/4より小さい光学厚さを有する第1の材料層及び第2の材料層からなる複数の第1の誘電体ペアと、第1の材料層及び第2の材料層のうち一つはλ/4より小さい光学厚さを有し、残りの一つはλ/4より大きい光学厚さを有する第1の材料層及び第2の材料層からなる少なくとも一つの第2の誘電体ペアと、いずれもλ/4より大きい光学厚さを有する第1の材料層及び第2の材料層からなる複数の第3の誘電体ペアとを含む
発光ダイオードチップの製造方法。 - 前記下部構造体を形成することは、
前記複数の誘電体ペア内の各層の光学厚さ及び前記複数の誘電体ペアの積層順序を設定し、
前記順序にしたがって前記基板上に各層を順次形成することを含む、請求項14に記載の発光ダイオードチップの製造方法。 - 前記複数の第1の誘電体ペアは、前記複数の第3の誘電体ペアに比べて相対的に前記基板により近くに配置されたり、前記基板からより遠くに配置されるように前記積層順序が設定される、請求項15に記載の発光ダイオードチップの製造方法。
- 前記少なくとも一つの第2の誘電体ペアは、前記下部構造体の中央付近に配置されるように前記積層順序が設定される、請求項16に記載の発光ダイオードチップの製造方法。
- 前記複数の第1の誘電体ペアのうち少なくとも過半数は、前記基板に最も近い第2の誘電体ペアに比べて前記基板により近くに位置し、前記複数の第3の誘電体ペアのうち少なくとも過半数は、前記基板から最も遠い第2の誘電体ペアに比べて前記基板からより遠くに位置するように前記積層順序が設定される、請求項15に記載の発光ダイオードチップの製造方法。
- 前記複数の第3の誘電体ペアのうち少なくとも過半数は、前記基板に最も近い第2の誘電体ペアに比べて前記基板により近くに位置し、前記複数の第1の誘電体ペアのうち少なくとも過半数は、前記基板から最も遠い第2の誘電体ペアに比べて前記基板からより遠くに位置するように前記積層順序が設定される、請求項15に記載の発光ダイオードチップの製造方法。
- 前記発光構造体の上部に交互積層上部構造体を形成することをさらに含み、
前記上部構造体は、前記活性層で生成された光を透過させると同時に、前記活性層で生成された光の波長より長波長である可視光線領域のうち少なくとも一部領域内の光を反射させる、請求項14に記載の発光ダイオードチップの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0134584 | 2010-12-24 | ||
KR1020100134584A KR101769075B1 (ko) | 2010-12-24 | 2010-12-24 | 발광 다이오드 칩 및 그것을 제조하는 방법 |
PCT/KR2011/004314 WO2012086888A1 (en) | 2010-12-24 | 2011-06-13 | Light emitting diode chip and method of fabricating the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015096753A Division JP6013555B2 (ja) | 2010-12-24 | 2015-05-11 | 発光ダイオードチップ及びそれを製造する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014500629A true JP2014500629A (ja) | 2014-01-09 |
JP5788991B2 JP5788991B2 (ja) | 2015-10-07 |
Family
ID=46314133
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013545995A Active JP5788991B2 (ja) | 2010-12-24 | 2011-06-13 | 発光ダイオードチップ及びそれを製造する方法 |
JP2015096753A Active JP6013555B2 (ja) | 2010-12-24 | 2015-05-11 | 発光ダイオードチップ及びそれを製造する方法 |
JP2016184549A Active JP6316892B2 (ja) | 2010-12-24 | 2016-09-21 | 発光ダイオードパッケージ |
JP2018062421A Active JP6368061B2 (ja) | 2010-12-24 | 2018-03-28 | 発光ダイオードパッケージ |
JP2018128475A Active JP6674978B2 (ja) | 2010-12-24 | 2018-07-05 | 発光ダイオードパッケージ |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015096753A Active JP6013555B2 (ja) | 2010-12-24 | 2015-05-11 | 発光ダイオードチップ及びそれを製造する方法 |
JP2016184549A Active JP6316892B2 (ja) | 2010-12-24 | 2016-09-21 | 発光ダイオードパッケージ |
JP2018062421A Active JP6368061B2 (ja) | 2010-12-24 | 2018-03-28 | 発光ダイオードパッケージ |
JP2018128475A Active JP6674978B2 (ja) | 2010-12-24 | 2018-07-05 | 発光ダイオードパッケージ |
Country Status (7)
Country | Link |
---|---|
US (1) | US8314440B2 (ja) |
EP (3) | EP3264476B1 (ja) |
JP (5) | JP5788991B2 (ja) |
KR (1) | KR101769075B1 (ja) |
CN (4) | CN103270611B (ja) |
DE (2) | DE202011110759U1 (ja) |
WO (1) | WO2012086888A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028305A (ja) * | 2010-12-24 | 2017-02-02 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオードチップ及びそれを製造する方法 |
KR20170047664A (ko) * | 2015-10-23 | 2017-05-08 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
US10355181B2 (en) | 2017-07-21 | 2019-07-16 | Nichia Corporation | Light-emitting device, integrated light-emitting device, and light-emitting module |
US10763408B2 (en) | 2017-07-21 | 2020-09-01 | Nichia Corporation | Backlight including light emitting module and light reflective members |
JP2021114594A (ja) * | 2019-08-27 | 2021-08-05 | 株式会社東芝 | 光半導体素子 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5865695B2 (ja) * | 2011-12-19 | 2016-02-17 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
US20140231852A1 (en) * | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
KR102075644B1 (ko) * | 2013-06-14 | 2020-02-10 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
FR3015772B1 (fr) * | 2013-12-19 | 2017-10-13 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree |
KR20160034534A (ko) | 2014-09-19 | 2016-03-30 | 삼성전자주식회사 | 반도체 발광 소자 |
KR20160143430A (ko) * | 2015-06-05 | 2016-12-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR102432588B1 (ko) * | 2015-09-22 | 2022-08-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
KR102351775B1 (ko) * | 2015-11-18 | 2022-01-14 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 화상 형성 장치 및 이에 포함되는 발광 소자 |
KR20190022326A (ko) * | 2017-08-24 | 2019-03-06 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 |
CN207818608U (zh) | 2017-11-22 | 2018-09-04 | 厦门市三安光电科技有限公司 | 一种led发光装置 |
DE102018101700A1 (de) * | 2018-01-25 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102018111168A1 (de) | 2018-05-09 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur |
KR102496316B1 (ko) | 2018-05-30 | 2023-02-07 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
DE102018117018A1 (de) * | 2018-07-13 | 2020-01-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer silberhaltigen stromaufweitungsstruktur und optoelektronische vorrichtung |
JP7032657B2 (ja) * | 2018-09-12 | 2022-03-09 | サミー株式会社 | スロットマシン |
JP6982251B2 (ja) * | 2018-09-12 | 2021-12-17 | サミー株式会社 | スロットマシン |
US11251340B2 (en) | 2019-01-23 | 2022-02-15 | Epistar Corporation | Light-emitting device with distributed Bragg reflection structure |
KR20210004242A (ko) * | 2019-07-03 | 2021-01-13 | 삼성전자주식회사 | Led 소자 및 그의 제조 방법 |
CN112786747A (zh) * | 2021-02-05 | 2021-05-11 | 东莞市中晶半导体科技有限公司 | InGaN基红光LED芯片结构 |
CN113826223B (zh) * | 2021-06-25 | 2023-10-20 | 厦门三安光电有限公司 | 半导体发光元件、半导体发光器件及显示装置 |
CN114068785A (zh) * | 2021-09-30 | 2022-02-18 | 华灿光电(浙江)有限公司 | 增加侧向出光的发光二极管芯片及其制备方法 |
JP7370438B1 (ja) | 2022-10-05 | 2023-10-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7370437B1 (ja) | 2022-10-05 | 2023-10-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04328877A (ja) * | 1991-04-26 | 1992-11-17 | Daido Steel Co Ltd | チャープ状光反射層を備えた半導体装置 |
JPH10270754A (ja) * | 1997-03-24 | 1998-10-09 | Sanyo Electric Co Ltd | 半導体発光素子および発光ランプ |
WO2007105626A1 (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works, Ltd. | 発光素子 |
JP2008235827A (ja) * | 2007-03-23 | 2008-10-02 | Matsushita Electric Works Ltd | 発光装置 |
JP2009033157A (ja) * | 2007-07-12 | 2009-02-12 | Osram Opto Semiconductors Gmbh | 半導体チップ及び半導体チップ製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2778868B2 (ja) * | 1991-03-26 | 1998-07-23 | 紀克 山内 | 面発光型発光ダイオード |
JPH065916A (ja) * | 1992-06-16 | 1994-01-14 | Omron Corp | 半導体発光素子 |
US5912915A (en) * | 1997-05-19 | 1999-06-15 | Coherent, Inc. | Ultrafast laser with multiply-folded resonant cavity |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
EP1098375A1 (en) * | 1999-11-05 | 2001-05-09 | Interuniversitair Micro-Elektronica Centrum Vzw | Optical filter and Resonant Cavity LED comprising the said optical filter |
JP4163833B2 (ja) * | 1999-11-30 | 2008-10-08 | 松下電器産業株式会社 | 半導体発光装置 |
JP4101468B2 (ja) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
JP2003270432A (ja) * | 2002-03-13 | 2003-09-25 | Shin Etsu Handotai Co Ltd | 可視光反射部材 |
US7367691B2 (en) * | 2003-06-16 | 2008-05-06 | Industrial Technology Research Institute | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
ATE486374T1 (de) * | 2003-08-08 | 2010-11-15 | Kang Sang Kyu | Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür |
US20050104078A1 (en) * | 2003-11-13 | 2005-05-19 | Ite Compound Semiconductor Corporation | Light-emitting diode having chemical compound based reflective structure |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
US7573074B2 (en) * | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
KR20080017180A (ko) * | 2006-08-21 | 2008-02-26 | 삼성전기주식회사 | 반도체 발광장치 |
JP5196097B2 (ja) * | 2006-08-29 | 2013-05-15 | 日亜化学工業株式会社 | 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置 |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
JP2008211164A (ja) | 2007-01-29 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光装置及びその製造方法 |
JP4851953B2 (ja) * | 2007-02-07 | 2012-01-11 | 株式会社日立製作所 | 光学部材 |
TWI352438B (en) * | 2007-08-31 | 2011-11-11 | Huga Optotech Inc | Semiconductor light-emitting device |
JP5634003B2 (ja) * | 2007-09-29 | 2014-12-03 | 日亜化学工業株式会社 | 発光装置 |
TWI531088B (zh) * | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | 具有分散式布拉格反射器的發光二極體晶片 |
KR101769075B1 (ko) * | 2010-12-24 | 2017-08-18 | 서울바이오시스 주식회사 | 발광 다이오드 칩 및 그것을 제조하는 방법 |
-
2010
- 2010-12-24 KR KR1020100134584A patent/KR101769075B1/ko active IP Right Grant
-
2011
- 2011-03-28 US US13/073,522 patent/US8314440B2/en active Active
- 2011-06-13 DE DE202011110759.4U patent/DE202011110759U1/de not_active Expired - Lifetime
- 2011-06-13 CN CN201180062417.5A patent/CN103270611B/zh active Active
- 2011-06-13 DE DE202011110910.4U patent/DE202011110910U1/de not_active Expired - Lifetime
- 2011-06-13 CN CN201611035832.2A patent/CN106653974B/zh active Active
- 2011-06-13 EP EP17185126.4A patent/EP3264476B1/en active Active
- 2011-06-13 CN CN201611048693.7A patent/CN106784233B/zh active Active
- 2011-06-13 EP EP11850200.4A patent/EP2656402B1/en active Active
- 2011-06-13 WO PCT/KR2011/004314 patent/WO2012086888A1/en active Application Filing
- 2011-06-13 JP JP2013545995A patent/JP5788991B2/ja active Active
- 2011-06-13 EP EP21199362.1A patent/EP3958020A1/en active Pending
- 2011-06-13 CN CN201611036363.6A patent/CN106653958B/zh active Active
-
2015
- 2015-05-11 JP JP2015096753A patent/JP6013555B2/ja active Active
-
2016
- 2016-09-21 JP JP2016184549A patent/JP6316892B2/ja active Active
-
2018
- 2018-03-28 JP JP2018062421A patent/JP6368061B2/ja active Active
- 2018-07-05 JP JP2018128475A patent/JP6674978B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04328877A (ja) * | 1991-04-26 | 1992-11-17 | Daido Steel Co Ltd | チャープ状光反射層を備えた半導体装置 |
JPH10270754A (ja) * | 1997-03-24 | 1998-10-09 | Sanyo Electric Co Ltd | 半導体発光素子および発光ランプ |
WO2007105626A1 (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works, Ltd. | 発光素子 |
JP2008235827A (ja) * | 2007-03-23 | 2008-10-02 | Matsushita Electric Works Ltd | 発光装置 |
JP2009033157A (ja) * | 2007-07-12 | 2009-02-12 | Osram Opto Semiconductors Gmbh | 半導体チップ及び半導体チップ製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028305A (ja) * | 2010-12-24 | 2017-02-02 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオードチップ及びそれを製造する方法 |
JP2018101814A (ja) * | 2010-12-24 | 2018-06-28 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオードパッケージ |
KR20170047664A (ko) * | 2015-10-23 | 2017-05-08 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
JP2017085081A (ja) * | 2015-10-23 | 2017-05-18 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 分布ブラッグ反射器を有する発光ダイオードチップ |
JP2018088535A (ja) * | 2015-10-23 | 2018-06-07 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 分布ブラッグ反射器を有する発光ダイオードチップ |
KR102471102B1 (ko) | 2015-10-23 | 2022-11-25 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
US10355181B2 (en) | 2017-07-21 | 2019-07-16 | Nichia Corporation | Light-emitting device, integrated light-emitting device, and light-emitting module |
US10763408B2 (en) | 2017-07-21 | 2020-09-01 | Nichia Corporation | Backlight including light emitting module and light reflective members |
US11201269B2 (en) | 2017-07-21 | 2021-12-14 | Nichia Corporation | Backlight including light emitting module and light reflective members |
JP2021114594A (ja) * | 2019-08-27 | 2021-08-05 | 株式会社東芝 | 光半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
CN106784233B (zh) | 2018-10-19 |
CN103270611A (zh) | 2013-08-28 |
EP2656402A4 (en) | 2014-07-09 |
JP2017028305A (ja) | 2017-02-02 |
EP3264476A1 (en) | 2018-01-03 |
EP2656402B1 (en) | 2017-10-04 |
JP6368061B2 (ja) | 2018-08-01 |
KR20120072711A (ko) | 2012-07-04 |
CN106653974B (zh) | 2019-03-05 |
DE202011110759U1 (de) | 2016-03-31 |
DE202011110910U1 (de) | 2017-03-02 |
JP6674978B2 (ja) | 2020-04-01 |
KR101769075B1 (ko) | 2017-08-18 |
JP6013555B2 (ja) | 2016-10-25 |
JP5788991B2 (ja) | 2015-10-07 |
JP2015179856A (ja) | 2015-10-08 |
JP6316892B2 (ja) | 2018-04-25 |
EP3264476B1 (en) | 2021-09-29 |
EP2656402A1 (en) | 2013-10-30 |
CN106653958B (zh) | 2019-01-22 |
CN103270611B (zh) | 2016-12-21 |
US20120161176A1 (en) | 2012-06-28 |
CN106653958A (zh) | 2017-05-10 |
CN106784233A (zh) | 2017-05-31 |
JP2018170524A (ja) | 2018-11-01 |
CN106653974A (zh) | 2017-05-10 |
US8314440B2 (en) | 2012-11-20 |
EP3958020A1 (en) | 2022-02-23 |
JP2018101814A (ja) | 2018-06-28 |
WO2012086888A1 (en) | 2012-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6368061B2 (ja) | 発光ダイオードパッケージ | |
JP6374564B2 (ja) | 分布ブラッグ反射器を有する発光ダイオードチップ、及び分布ブラッグ反射器を有する発光ダイオードパッケージ | |
US8963183B2 (en) | Light emitting diode having distributed Bragg reflector | |
JP2011166146A (ja) | 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法 | |
KR20110053064A (ko) | 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지 | |
KR101562375B1 (ko) | 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지 | |
KR101873502B1 (ko) | 발광 다이오드 칩 및 그것을 제조하는 방법 | |
KR20130110131A (ko) | 파장변환층을 갖는 발광 다이오드 칩, 그것을 제조하는 방법 및 그것을 갖는 패키지 | |
KR101590585B1 (ko) | 발광 다이오드 칩 및 그것을 제조하는 방법 | |
KR101562377B1 (ko) | 발광 다이오드 칩 및 그것을 제조하는 방법 | |
KR101562376B1 (ko) | 발광 다이오드 칩 및 그것을 제조하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141111 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150203 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150303 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150511 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150630 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150730 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5788991 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S201 | Request for registration of exclusive licence |
Free format text: JAPANESE INTERMEDIATE CODE: R314201 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |