JP2014239157A - 半導体装置、固体撮像装置、および撮像装置 - Google Patents
半導体装置、固体撮像装置、および撮像装置 Download PDFInfo
- Publication number
- JP2014239157A JP2014239157A JP2013121045A JP2013121045A JP2014239157A JP 2014239157 A JP2014239157 A JP 2014239157A JP 2013121045 A JP2013121045 A JP 2013121045A JP 2013121045 A JP2013121045 A JP 2013121045A JP 2014239157 A JP2014239157 A JP 2014239157A
- Authority
- JP
- Japan
- Prior art keywords
- base electrode
- semiconductor substrate
- substrate
- bump
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 226
- 238000003384 imaging method Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 240
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 230000003321 amplification Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10135—Alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16148—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a bonding area protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/8113—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/81132—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06593—Mounting aids permanently on device; arrangements for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (8)
- 第1の基板と、
第2の基板と、
前記第1の基板と前記第2の基板とを電気的に接続する接続部と、
前記第1の基板と前記第2の基板とのアライメントに使用されるアライメントマークと、
を備え、
前記接続部は、
前記第1の基板に配置された第1の電極と、
前記第2の基板に配置された第2の電極と、
前記第1の電極と前記第2の電極とを接続する接続バンプと、
を備え、
前記アライメントマークは、
前記第1の基板に配置された第1のマークと、
前記第2の基板において、前記第1のマークの位置と対応する位置に配置された第2のマークと、
を備え、
前記第1のマークの高さと、前記第2のマークの高さとの和は、前記第1の電極の高さと、前記第2の電極の高さと、前記接続バンプの高さとの和と略等しい
ことを特徴とする半導体装置。 - 前記第2のマークの高さは、前記第2の電極の高さと、前記接続バンプの高さとの和と略等しいことを特徴とする請求項1に記載の半導体装置。
- 前記第1のマークは、前記第1の基板に配置された電極であり、
前記第2のマークは、前記第2の基板に配置されたバンプであること特徴とする請求項2に記載の半導体装置。 - 前記第1の基板と前記第2の基板とを平面的に見た場合に、前記第1のマークは前記第2のマークの周囲を囲んでいることを特徴とする請求項3に記載の半導体装置。
- 前記バンプは、前記第2の基板と、前記第2の基板の表面に形成された下地電極の表面とに接続され、
前記下地電極の幅は、前記バンプの幅以下であることを特徴とする請求項3に記載の半導体装置。 - 請求項1〜請求項5のいずれか一項に記載の半導体装置を備え、
前記第1の基板は、入射した光量に応じた信号を出力する光電変換素子を備え、
前記第2の基板は、前記光電変換素子から出力された信号を処理する処理回路を備えることを特徴とする固体撮像装置。 - 請求項3〜請求項5のいずれか一項に記載の半導体装置を備え、
前記第2の基板は、入射した光量に応じた信号を出力する光電変換素子を備え、
前記第1の基板は、前記光電変換素子から出力された信号を処理する処理回路を備えることを特徴とする固体撮像装置。 - 請求項6または請求項7に記載の固体撮像装置を備えることを特徴とする撮像装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013121045A JP6234074B2 (ja) | 2013-06-07 | 2013-06-07 | 半導体装置、固体撮像装置、および撮像装置 |
CN201480030714.5A CN105283957B (zh) | 2013-06-07 | 2014-03-31 | 半导体装置、固体摄像装置以及摄像装置 |
EP14807753.0A EP3007229A4 (en) | 2013-06-07 | 2014-03-31 | Semiconductor device, solid-state imaging device, and imaging device |
PCT/JP2014/059547 WO2014196255A1 (ja) | 2013-06-07 | 2014-03-31 | 半導体装置、固体撮像装置、および撮像装置 |
US14/944,688 US9748178B2 (en) | 2013-06-07 | 2015-11-18 | Semiconductor device, solid-state imaging device, and imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013121045A JP6234074B2 (ja) | 2013-06-07 | 2013-06-07 | 半導体装置、固体撮像装置、および撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014239157A true JP2014239157A (ja) | 2014-12-18 |
JP6234074B2 JP6234074B2 (ja) | 2017-11-22 |
Family
ID=52007910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013121045A Active JP6234074B2 (ja) | 2013-06-07 | 2013-06-07 | 半導体装置、固体撮像装置、および撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9748178B2 (ja) |
EP (1) | EP3007229A4 (ja) |
JP (1) | JP6234074B2 (ja) |
CN (1) | CN105283957B (ja) |
WO (1) | WO2014196255A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6345370B1 (ja) * | 2017-01-12 | 2018-06-20 | 三菱電機株式会社 | 赤外線センサデバイス |
WO2018131216A1 (ja) * | 2017-01-12 | 2018-07-19 | 三菱電機株式会社 | 赤外線センサ基板及び赤外線センサデバイス |
WO2018216318A1 (ja) * | 2017-05-26 | 2018-11-29 | シャープ株式会社 | 半導体モジュールおよびその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI618212B (zh) * | 2016-10-05 | 2018-03-11 | 南茂科技股份有限公司 | 薄膜覆晶封裝結構 |
JP7033517B2 (ja) | 2018-09-05 | 2022-03-10 | 株式会社ダイヘン | アーク溶接方法 |
US11495562B2 (en) | 2019-12-27 | 2022-11-08 | Attollo Engineering, LLC | Alignment features for hybridized image sensor |
CN113594119B (zh) * | 2021-06-25 | 2024-05-14 | 苏州汉天下电子有限公司 | 半导体封装及其制造方法 |
CN116666363B (zh) * | 2023-08-01 | 2023-09-19 | 无锡兴华衡辉科技有限公司 | 一种卡槽式对位标记及防止铟柱滑移的互连方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03142820A (ja) * | 1989-10-27 | 1991-06-18 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH03214629A (ja) * | 1990-01-18 | 1991-09-19 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH117004A (ja) * | 1997-04-23 | 1999-01-12 | Citizen Watch Co Ltd | 液晶表示装置及び、アライメントマーク |
JP2003282616A (ja) * | 2002-03-20 | 2003-10-03 | Seiko Epson Corp | バンプの形成方法及び半導体装置の製造方法 |
JP2004505273A (ja) * | 2000-08-01 | 2004-02-19 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法 |
JP2006054222A (ja) * | 2004-08-09 | 2006-02-23 | Advanced Lcd Technologies Development Center Co Ltd | 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法および表示装置 |
JP2007003651A (ja) * | 2005-06-22 | 2007-01-11 | Nec Lcd Technologies Ltd | 液晶表示パネル及びその製造方法 |
JP2007155562A (ja) * | 2005-12-07 | 2007-06-21 | Acrorad Co Ltd | 放射線画像検出モジュールおよび放射線画像検出装置 |
WO2008111214A1 (ja) * | 2007-03-15 | 2008-09-18 | Fujitsu Limited | 表示パネル、積層型表示素子及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7041533B1 (en) * | 2000-06-08 | 2006-05-09 | Micron Technology, Inc. | Stereolithographic method for fabricating stabilizers for semiconductor devices |
US6933505B2 (en) * | 2002-03-13 | 2005-08-23 | Oy Ajat Ltd | Low temperature, bump-bonded radiation imaging device |
JP4349232B2 (ja) | 2004-07-30 | 2009-10-21 | ソニー株式会社 | 半導体モジュール及びmos型固体撮像装置 |
US7332423B2 (en) * | 2005-06-29 | 2008-02-19 | Intel Corporation | Soldering a die to a substrate |
KR100809704B1 (ko) * | 2006-09-22 | 2008-03-06 | 삼성전자주식회사 | 조립 정확도가 개선된 반도체 패키지 |
JP2008098384A (ja) * | 2006-10-11 | 2008-04-24 | Denso Corp | 半導体パッケージの製造装置及び半導体パッケージの製造方法 |
US20080142968A1 (en) * | 2006-12-15 | 2008-06-19 | International Business Machines Corporation | Structure for controlled collapse chip connection with a captured pad geometry |
JP4835710B2 (ja) | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
JP2010272707A (ja) * | 2009-05-22 | 2010-12-02 | Panasonic Corp | アライメント接合方法 |
JP5732631B2 (ja) * | 2009-09-18 | 2015-06-10 | ボンドテック株式会社 | 接合装置および接合方法 |
JP2012256737A (ja) * | 2011-06-09 | 2012-12-27 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
-
2013
- 2013-06-07 JP JP2013121045A patent/JP6234074B2/ja active Active
-
2014
- 2014-03-31 EP EP14807753.0A patent/EP3007229A4/en not_active Withdrawn
- 2014-03-31 CN CN201480030714.5A patent/CN105283957B/zh not_active Expired - Fee Related
- 2014-03-31 WO PCT/JP2014/059547 patent/WO2014196255A1/ja active Application Filing
-
2015
- 2015-11-18 US US14/944,688 patent/US9748178B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03142820A (ja) * | 1989-10-27 | 1991-06-18 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH03214629A (ja) * | 1990-01-18 | 1991-09-19 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH117004A (ja) * | 1997-04-23 | 1999-01-12 | Citizen Watch Co Ltd | 液晶表示装置及び、アライメントマーク |
JP2004505273A (ja) * | 2000-08-01 | 2004-02-19 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法 |
JP2003282616A (ja) * | 2002-03-20 | 2003-10-03 | Seiko Epson Corp | バンプの形成方法及び半導体装置の製造方法 |
JP2006054222A (ja) * | 2004-08-09 | 2006-02-23 | Advanced Lcd Technologies Development Center Co Ltd | 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法および表示装置 |
JP2007003651A (ja) * | 2005-06-22 | 2007-01-11 | Nec Lcd Technologies Ltd | 液晶表示パネル及びその製造方法 |
JP2007155562A (ja) * | 2005-12-07 | 2007-06-21 | Acrorad Co Ltd | 放射線画像検出モジュールおよび放射線画像検出装置 |
WO2008111214A1 (ja) * | 2007-03-15 | 2008-09-18 | Fujitsu Limited | 表示パネル、積層型表示素子及びその製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6345370B1 (ja) * | 2017-01-12 | 2018-06-20 | 三菱電機株式会社 | 赤外線センサデバイス |
WO2018131216A1 (ja) * | 2017-01-12 | 2018-07-19 | 三菱電機株式会社 | 赤外線センサ基板及び赤外線センサデバイス |
CN110140215A (zh) * | 2017-01-12 | 2019-08-16 | 三菱电机株式会社 | 红外线传感器基板以及红外线传感器器件 |
US10847567B2 (en) | 2017-01-12 | 2020-11-24 | Mitsubishi Electric Corporation | Infrared sensor device including infrared sensor substrate and signal processing circuit substrate coupled to each other |
CN110140215B (zh) * | 2017-01-12 | 2022-12-09 | 三菱电机株式会社 | 红外线传感器器件 |
WO2018216318A1 (ja) * | 2017-05-26 | 2018-11-29 | シャープ株式会社 | 半導体モジュールおよびその製造方法 |
JPWO2018216318A1 (ja) * | 2017-05-26 | 2020-03-26 | シャープ株式会社 | 半導体モジュールおよびその製造方法 |
US11251134B2 (en) | 2017-05-26 | 2022-02-15 | Sharp Kabushiki Kaisha | Semiconductor module and method for manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
US9748178B2 (en) | 2017-08-29 |
EP3007229A4 (en) | 2017-01-04 |
US20160071897A1 (en) | 2016-03-10 |
CN105283957A (zh) | 2016-01-27 |
JP6234074B2 (ja) | 2017-11-22 |
CN105283957B (zh) | 2018-06-26 |
EP3007229A1 (en) | 2016-04-13 |
WO2014196255A1 (ja) | 2014-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6234074B2 (ja) | 半導体装置、固体撮像装置、および撮像装置 | |
JP6369233B2 (ja) | 固体撮像素子及びその信号処理方法、並びに電子機器 | |
JP6127869B2 (ja) | 固体撮像素子及びその駆動方法、並びに電子機器 | |
US9117728B2 (en) | Solid-state imaging device, method of manufacturing same, and electronic apparatus | |
KR102261981B1 (ko) | 고체 촬상 장치 및 그 구동 방법, 및 전자 기기 | |
JP5881324B2 (ja) | 固体撮像装置、固体撮像装置の制御方法、および撮像装置 | |
JP6042636B2 (ja) | 固体撮像素子および固体撮像装置 | |
WO2013118646A1 (ja) | 撮像素子、製造装置および方法、並びに、撮像装置 | |
JP2013090127A (ja) | 固体撮像装置および撮像装置 | |
JP2009158800A (ja) | 固体撮像素子及びこれを用いた撮像装置 | |
JP5802432B2 (ja) | 固体撮像装置、撮像装置および信号読み出し方法 | |
JP2016001682A (ja) | 固体撮像装置およびその製造方法、並びに電子機器 | |
WO2017043343A1 (ja) | 固体撮像装置および電子機器 | |
US9954023B2 (en) | Solid-state imaging device and imaging apparatus | |
JP6083977B2 (ja) | 固体撮像装置および撮像装置 | |
US9277151B2 (en) | Solid-state image sensor with an effective pixel area, and image pickup apparatus | |
JP6202825B2 (ja) | 固体撮像装置および撮像装置 | |
JP2012165070A (ja) | 固体撮像素子及びこれを用いた撮像装置 | |
JP2005198001A (ja) | 固体撮像装置 | |
JP2016103513A (ja) | 撮像素子および撮像装置 | |
TW202116060A (zh) | 固體攝像元件及電子機器 | |
JP2017143491A (ja) | 積層型撮像素子及び撮像装置 | |
JP2013168720A (ja) | 固体撮像装置および撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160502 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20170222 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170606 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170904 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170912 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171010 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171024 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6234074 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |