JP2014199339A - Optical waveguide element - Google Patents
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- JP2014199339A JP2014199339A JP2013074731A JP2013074731A JP2014199339A JP 2014199339 A JP2014199339 A JP 2014199339A JP 2013074731 A JP2013074731 A JP 2013074731A JP 2013074731 A JP2013074731 A JP 2013074731A JP 2014199339 A JP2014199339 A JP 2014199339A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2255—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure controlled by a high-frequency electromagnetic component in an electric waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/127—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode travelling wave
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Abstract
Description
本発明は、光導波路素子に関し、基板に光導波路と制御電極とが形成された光導波路素子に関する。 The present invention relates to an optical waveguide device, and more particularly to an optical waveguide device in which an optical waveguide and a control electrode are formed on a substrate.
光通信や光計測の技術分野では、光変調に際して、ニオブ酸リチウム(LN)などの電気光学効果を有する基板に、光導波路と該光導波路を伝搬する光波を制御するための制御電極とを備えた光導波路素子が広く用いられている。 In the technical fields of optical communication and optical measurement, a substrate having an electro-optic effect such as lithium niobate (LN) is provided with a light guide and a control electrode for controlling a light wave propagating through the light guide in light modulation. Optical waveguide elements are widely used.
制御電極を構成する信号電極の形状は、マイクロ波信号と光波との速度整合条件を満足させるために、20μm程度以上の厚さを有する他、電気回路とのインピーダンスを整合させるために、接続部分の形状が制約される。一方、直流成分を印加するためのバイアス制御電極部分においては、そのような制約が無いため、接続部分の大きさは、素子の設計の観点からも、一般的に用いられる電極材料である、高コストな金(Au)を節約するという観点からも、その厚みは小さい方が望ましい。 The shape of the signal electrode constituting the control electrode has a thickness of about 20 μm or more in order to satisfy the speed matching condition between the microwave signal and the light wave, and in order to match the impedance with the electric circuit, Is constrained. On the other hand, since there is no such restriction in the bias control electrode portion for applying the direct current component, the size of the connection portion is a commonly used electrode material from the viewpoint of element design. From the viewpoint of saving cost gold (Au), the thickness is preferably small.
また、光導波路素子において、高周波信号を伝搬させる部分の信号電極、接地電極は、電極の厚さを20μm程度以上とするが、それとは逆に温度安定性を保つためにバイアス制御を行う直流電極部分の信号電極、接地電極部分は、1〜5μm程度に薄くする構造が取られている。 Further, in the optical waveguide element, the signal electrode and the ground electrode that propagate the high-frequency signal have an electrode thickness of about 20 μm or more, but conversely, a DC electrode that performs bias control to maintain temperature stability The signal electrode and ground electrode portions of the portion are structured to be thinned to about 1 to 5 μm.
また、光導波路素子を格納する筺体に設けられた電気接続部と電気的に接続するために金線などの配線材料を、ツールを用いたボンディングにより接続するが、電気接続部の電極厚みが1μm以下と薄い場合には、ボンディングの強度が十分確保出来ない他、電気接続部の厚みが10μm程度であっても、20μm程度に薄膜化された主基板を有する構造の場合は、更にこのボンディングにより、主基板が破損するという問題が生じている。 In addition, a wiring material such as a gold wire is connected by electrical bonding with a tool in order to electrically connect with an electrical connection provided in the housing for storing the optical waveguide element. The electrode thickness of the electrical connection is 1 μm. In the case where the thickness is as follows, the bonding strength cannot be sufficiently secured, and even if the thickness of the electrical connection portion is about 10 μm, the structure having the main substrate thinned to about 20 μm is further bonded by this bonding. There is a problem that the main board is damaged.
そのため、ボンディング工程のパラメータである温度や超音波強度、圧力を緩和して実施する場合もあるが、その場合はボンディングの強度が不足し、所望の信頼性が確保出来なかった。 For this reason, there are cases where the temperature, ultrasonic intensity, and pressure, which are parameters of the bonding process, are relaxed, but in that case, the bonding strength is insufficient, and the desired reliability cannot be ensured.
また、特許文献1では、接続部分に接続される配線材料の圧着面積を、3800μm2以下とすることで、所望の信頼性を確保するという技術が提案されているが、主基板の破損に対する影響については、何ら記載されておらず、接続部分に要求される形状などの条件は、一切不明であった。 Further, Patent Document 1 proposes a technique for ensuring desired reliability by setting the crimping area of the wiring material connected to the connection portion to 3800 μm 2 or less. No information has been written about, and the conditions such as the shape required for the connecting portion were completely unknown.
本発明が解決しようとする課題は、上記の問題を解決し、制御電極に電気的接続配線を接続する作業において当該基板の破損を抑制することが可能な光導波路素子を提供することである。 The problem to be solved by the present invention is to provide an optical waveguide element capable of solving the above-mentioned problems and suppressing the breakage of the substrate in the operation of connecting the electrical connection wiring to the control electrode.
上記課題を解決するために、本発明の光導波路素子は以下のような技術的特徴を有する。
(1) 電気光学効果を有する基板と、該基板に形成された光導波路と、該光導波路を伝搬する光波を制御するための制御電極とを有する光導波路素子において、該制御電極が直流電圧を印加する電極であり、該電極の厚みが10μm以下であって、該制御電極と外部の電気回路とを電気的に接続するため、該制御電極の一部に形成された接続用パッドを有し、該接続用パッドの平面上の面積が22000μm2以上であり、該接続用パッドの全体の厚さが10μmより厚いことを特徴とする。
In order to solve the above problems, the optical waveguide device of the present invention has the following technical features.
(1) In an optical waveguide device having a substrate having an electro-optic effect, an optical waveguide formed on the substrate, and a control electrode for controlling a light wave propagating through the optical waveguide, the control electrode generates a DC voltage. An electrode to be applied, the electrode having a thickness of 10 μm or less, and having a connection pad formed on a part of the control electrode for electrically connecting the control electrode and an external electric circuit The area on the plane of the connection pad is 22000 μm 2 or more, and the total thickness of the connection pad is greater than 10 μm.
(2) 上記(1)に記載の光導波路素子において、該接続用パッドにワイヤボンディングによる接続が行われていることを特徴とする。 (2) The optical waveguide device according to (1), wherein the connection pad is connected by wire bonding.
(3) 上記(1)又は(2)に記載の光導波路素子において、該基板の厚さは20μm以下であることを特徴とする。 (3) In the optical waveguide device according to (1) or (2), the thickness of the substrate is 20 μm or less.
(4) 上記(3)に記載の光導波路素子において、該基板は、補強基板に貼り付けられていることを特徴とする。 (4) The optical waveguide device according to (3), wherein the substrate is attached to a reinforcing substrate.
本発明のように、制御電極が直流電圧を印加する電極であり、該電極の厚みが10μm以下であって、該制御電極と外部の電気回路とを電気的に接続するため、該制御電極の一部に形成された接続用パッドを有し、該接続用パッドの平面上の面積が22000μm2以上であり、該接続用パッドの全体の厚さが10μmより厚いため、電気的接続配線を接続する際に、該接続用パットで、接続に際する物理的衝撃等の影響を吸収又は制限するため、基板の破損を抑制することが可能となる。 As in the present invention, the control electrode is an electrode for applying a DC voltage, the thickness of the electrode is 10 μm or less, and the control electrode is electrically connected to an external electric circuit. It has connection pads formed in part, the area of the connection pads on the plane is 22000 μm 2 or more, and the total thickness of the connection pads is thicker than 10 μm. In this case, the connection pad absorbs or restricts the influence of physical impact or the like upon connection, so that damage to the substrate can be suppressed.
以下、本発明について好適例を用いて詳細に説明する。
図1又は2に示すように、本発明の光導波路素子は、電気光学効果を有する基板と、該基板に形成された光導波路と、該光導波路を伝搬する光波を制御するための制御電極(例えば、信号電極)とを有する光導波路素子において、該制御電極が直流電圧を印加する電極であり、該電極の厚みが10μm以下であって、該制御電極と外部の電気回路とを電気的に接続するため、該制御電極の一部に形成された接続用パッドを有し、該接続用パッドの平面上の面積(図1参照)が22000μm2以上であり、該接続用パッドの全体の厚さ(図2参照)が10μmより厚いことを特徴とする。
Hereinafter, the present invention will be described in detail using preferred examples.
As shown in FIG. 1 or 2, the optical waveguide device of the present invention includes a substrate having an electro-optic effect, an optical waveguide formed on the substrate, and a control electrode for controlling a light wave propagating through the optical waveguide ( For example, in the optical waveguide device having a signal electrode), the control electrode is an electrode for applying a DC voltage, and the thickness of the electrode is 10 μm or less, and the control electrode and an external electric circuit are electrically connected to each other. In order to connect, it has a connection pad formed in a part of the control electrode, the area on the plane of the connection pad (see FIG. 1) is 22000 μm 2 or more, and the total thickness of the connection pad The thickness (see FIG. 2) is thicker than 10 μm.
本発明の光導波路素子に使用される基板としては、電気光学効果を有する基板を使用する必要があり、例えばニオブ酸リチウム、タンタル酸リチウム、PLZT(ジルコン酸チタン酸鉛ランタン)等の単結晶材料やこれらの固溶体結晶材料を用いることができる。また、半導体やポリマーも電気光学効果を有する基板として使用することが可能である。 As a substrate used for the optical waveguide device of the present invention, it is necessary to use a substrate having an electro-optic effect. For example, a single crystal material such as lithium niobate, lithium tantalate, or PLZT (lead lanthanum zirconate titanate). Alternatively, these solid solution crystal materials can be used. Semiconductors and polymers can also be used as substrates having an electro-optic effect.
光導波路は、例えば、チタンなどの高屈折率材料を基板に注入又は熱拡散することで形成することが可能である。また、基板に凹凸を形成し、リッジ型又はリブ型の光導波路を形成することも可能である。光導波路に近接して制御電極が形成されるが、例えばZカットの基板を用いて、光導波路の直上に電極を形成する場合などは、光導波路を伝播する光波の電極層への吸収を抑制するため、酸化シリコン(SiO2)などからなるバッファ層を、光導波路上又は基板上に形成することが可能である。 The optical waveguide can be formed, for example, by injecting or thermally diffusing a high refractive index material such as titanium into the substrate. It is also possible to form a ridge type or rib type optical waveguide by forming irregularities on the substrate. The control electrode is formed close to the optical waveguide. For example, when a Z-cut substrate is used to form an electrode directly above the optical waveguide, absorption of light waves propagating through the optical waveguide to the electrode layer is suppressed. Therefore, a buffer layer made of silicon oxide (SiO 2 ) or the like can be formed on the optical waveguide or the substrate.
制御電極は、信号電極と接地電極から構成される。制御電極を形成する際には、導電性金属で下地電極パターンを基板上に形成し、金メッキ処理などにより、必要な厚みの制御電極を形成する。例えば、信号電極にマイクロ波などの高周波数の変調信号を印加する場合には、インピーダンス調整の観点から20μm以上の厚みで電極形成することが好ましい。また、DCバイアス制御などの直流電圧を印加する際には、インピーダンスの調整が不要であることから、金(Au)などの貴重な材料の消費を抑えるため、10μm以下の厚みとすることも可能である。図2は、信号電極として比較的薄い厚みの電極を使用し、その上に電気的接続を行いながら接続用パッドを形成する実施例を開示している。 The control electrode is composed of a signal electrode and a ground electrode. When forming the control electrode, a base electrode pattern is formed on the substrate with a conductive metal, and the control electrode having a necessary thickness is formed by gold plating or the like. For example, when a high frequency modulation signal such as a microwave is applied to the signal electrode, it is preferable to form the electrode with a thickness of 20 μm or more from the viewpoint of adjusting the impedance. Also, when applying a DC voltage such as DC bias control, it is not necessary to adjust the impedance, so the thickness can be 10 μm or less in order to suppress the consumption of precious materials such as gold (Au). It is. FIG. 2 discloses an embodiment in which a relatively thin electrode is used as a signal electrode, and a connection pad is formed on the electrode while performing electrical connection thereon.
マイクロ波などの高周波数の変調信号を印加する信号電極においては、信号電極と接続用パッドを一度に形成し、同じ厚みで構成することも可能である。 In a signal electrode to which a modulation signal of a high frequency such as a microwave is applied, the signal electrode and the connection pad can be formed at a time and configured with the same thickness.
本発明の光導波路素子の特徴は、図1に示すように、外部の電気回路と電気的な接続を行う接続用パッドに関して、平面上の面積が22000μm2以上であり、図2に示すように、接続用パッドの厚さは10μmより厚いことである。制御電極が直流電圧を印加する電極である場合には、その厚みが10μm以下となるため、本発明を適用することが好ましい。しかも、使用する基板が20μ以下の薄板である場合には、さらに適用が好ましい。なお、基板が薄板でない場合には、電極パッドの厚さは3μm以下でもよい。 As shown in FIG. 1, the optical waveguide element of the present invention has a planar area of 22000 μm 2 or more with respect to a connection pad for electrical connection with an external electric circuit, as shown in FIG. The thickness of the connection pad is greater than 10 μm. When the control electrode is an electrode for applying a DC voltage, the thickness is 10 μm or less, and therefore it is preferable to apply the present invention. In addition, when the substrate to be used is a thin plate of 20 μm or less, the application is more preferable. When the substrate is not a thin plate, the thickness of the electrode pad may be 3 μm or less.
光導波路素子を収容する筐体に設けられた電気接続部(外部の電気回路に繋がる端子)と光導波路素子に設けられた制御電極とを電気的に接続する金線などの接続手段を、当該制御電極に接続する際に、この接続用パッドが存在するため、金ワイヤや金リボンなどのボンディング作業時に発生する熱、超音波、圧力などによる物理理的な衝撃を、基板に直接与えることを抑制できるため、基板の破損を防ぐことが可能となる。 A connecting means such as a gold wire for electrically connecting an electrical connecting portion (terminal connected to an external electric circuit) provided in a housing for housing the optical waveguide element and a control electrode provided in the optical waveguide element; Since this connection pad exists when connecting to the control electrode, it is possible to directly apply a physical impact due to heat, ultrasonic waves, pressure, etc. generated during bonding work such as gold wire or gold ribbon to the substrate. Since it can suppress, it becomes possible to prevent damage to a board | substrate.
本発明の効果を確認するため、基板の厚みが10μmの光導波路素子に対して、表1に示すような3つの形状を含む異なる接続用パッドを用意し、ワイヤボンディングの試験を行った。 In order to confirm the effect of the present invention, different connection pads including three shapes as shown in Table 1 were prepared for an optical waveguide element having a substrate thickness of 10 μm, and a wire bonding test was performed.
表1の結果からも、明らかなように、平面上の面積が22000μm2以上であり、厚さが10μm以上の場合には、確実に基板の破損を防止できることを確認した。 As is clear from the results in Table 1, it was confirmed that the substrate can be reliably prevented from being damaged when the area on the plane is 22000 μm 2 or more and the thickness is 10 μm or more.
本発明の光導波路素子は、基板の厚みが20μm以下の極めて薄い基板であるため、基板の機械的強度が極めて弱い。このため、図2に示すように、基板には補強基板を貼り付けることが好ましい。この場合には、接着層の厚みを数十μm以上確保すると共に、補強基板と主基板(薄板)との熱膨張率を揃えるなどの工夫を行うことがより好ましい。 Since the optical waveguide device of the present invention is an extremely thin substrate having a thickness of 20 μm or less, the mechanical strength of the substrate is extremely weak. For this reason, as shown in FIG. 2, it is preferable to affix a reinforcement board | substrate to a board | substrate. In this case, it is more preferable to devise measures such as ensuring the thickness of the adhesive layer of several tens of μm or more and making the thermal expansion coefficient uniform between the reinforcing substrate and the main substrate (thin plate).
本発明の実施の形態においては、本願発明の効果が顕著に確認できる構成である薄い基板を用いた光導波路素子を例に挙げたが、本発明はバルク基板を用いた光導波路素子においても利用可能であり、その場合には更に薄い制御電極での構成が可能であるためボンディングの強度が十分確保出来るという点で効果が高い。 In the embodiment of the present invention, an optical waveguide element using a thin substrate having a configuration in which the effect of the present invention can be remarkably confirmed has been exemplified. However, the present invention is also used in an optical waveguide element using a bulk substrate. In this case, the structure can be formed with a thinner control electrode, and therefore, the effect is high in that a sufficient bonding strength can be secured.
本発明の光導波路素子は光変調器であってもよく、多値変調器(DP−QPSK、QAM変調器など)のように電極構成が複雑な場合においては、本発明の課題が顕著に現れるため効果は高い。 The optical waveguide device of the present invention may be an optical modulator, and when the electrode configuration is complicated like a multi-value modulator (DP-QPSK, QAM modulator, etc.), the problem of the present invention appears remarkably. Therefore, the effect is high.
本発明によれば、制御電極に電気的接続配線を接続する作業において当該基板の破損を抑制することが可能な光導波路素子を提供することが可能となる。 ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the optical waveguide element which can suppress the failure | damage of the said board | substrate in the operation | work which connects an electrical connection wiring to a control electrode.
Claims (4)
該制御電極が直流電圧を印加する電極であり、該電極の厚みが10μm以下であって、
該制御電極と外部の電気回路とを電気的に接続するため、該制御電極の一部に形成された接続用パッドを有し、
該接続用パッドの平面上の面積が22000μm2以上であり、該接続用パッドの全体の厚さが10μmより厚いことを特徴とする光導波路素子。 In an optical waveguide device having a substrate having an electro-optic effect, an optical waveguide formed on the substrate, and a control electrode for controlling a light wave propagating through the optical waveguide,
The control electrode is an electrode for applying a DC voltage, and the thickness of the electrode is 10 μm or less;
In order to electrically connect the control electrode and an external electric circuit, a connection pad formed on a part of the control electrode is provided,
An optical waveguide device characterized in that an area on a plane of the connection pad is 22000 μm 2 or more, and an overall thickness of the connection pad is larger than 10 μm.
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CN107547138A (en) * | 2017-08-16 | 2018-01-05 | 华东师范大学 | Multiplier parameter is tunable phase-coded signal optics generation device and method |
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JP2012128007A (en) * | 2010-12-13 | 2012-07-05 | Anritsu Corp | Optical modulator |
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JPS6119136A (en) * | 1984-07-05 | 1986-01-28 | Toshiba Corp | Wire-bonding method for semiconductor device and bonding pad to be used for that |
JPH11307601A (en) * | 1998-04-16 | 1999-11-05 | Mitsubishi Electric Corp | Semiconductor device |
JP2002196295A (en) * | 2000-12-25 | 2002-07-12 | Sumitomo Osaka Cement Co Ltd | Optical waveguide element |
JP2009244629A (en) * | 2008-03-31 | 2009-10-22 | Sumitomo Osaka Cement Co Ltd | Optical device |
JP2012128007A (en) * | 2010-12-13 | 2012-07-05 | Anritsu Corp | Optical modulator |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107547138A (en) * | 2017-08-16 | 2018-01-05 | 华东师范大学 | Multiplier parameter is tunable phase-coded signal optics generation device and method |
CN107547138B (en) * | 2017-08-16 | 2020-01-07 | 华东师范大学 | Frequency multiplication factor tunable phase coding signal optical generation device and method |
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JP5720716B2 (en) | 2015-05-20 |
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