JP2014171210A5

JP2014171210A5 -

Info

Publication number: JP2014171210A5
Application number: JP2013268657A
Authority: JP
Filing date: 2013-12-26
Publication date: 2017-02-09

Claims

高周波フィルタであって、
第１及び第２の信号端と、
前記第１及び第２の信号端の間に接続され、通過帯域と阻止帯域を有するフィルタ部と、
前記フィルタ部と並列接続になるように前記第１及び第２の信号端の間に設けられた付加回路部と
を含み、
前記付加回路部は前記阻止帯域の中に通過特性を有する周波数領域を有し、
前記周波数領域において前記付加回路部を通過する信号と前記フィルタ部を通過する信号とが逆方向の位相成分を有する高周波フィルタ。 A high frequency filter,
First and second signal ends;
Connected between said first and second signal end, a filter unit having a stop band and pass band,
An additional circuit portion provided between the first and second signal ends so as to be connected in parallel with the filter portion ;
Including
The additional circuit section has a frequency region having a pass characteristic in the stop band,
The high frequency filter and a signal passing through signal and the filter unit that passes through the additional circuit portion in the frequency region has a reverse phase component.

前記付加回路部は、同一の弾性波導波路上に所定の距離をおいて形成された２個のＩＤＴ電極を有する請求項１記載の高周波フィルタ。 The high frequency filter according to claim 1, wherein the additional circuit section includes two IDT electrodes formed at a predetermined distance on the same elastic wave waveguide.

前記逆方向の位相成分は、前記所定の距離を設定することによって調整される請求項２の高周波フィルタ。 Phase component of the reverse direction, the high frequency filter according to claim 2 which is adjusted me by the setting the predetermined distance.

前記フィルタ部は弾性波素子を用いて構成される請求項１の高周波フィルタ。 High frequency filter of claim 1 wherein the filter unit is made up of an acoustic wave element.

前記付加回路部は、前記周波数領域における通過特性の振幅レベルをシフトさせる素子を含む請求項１の高周波フィルタ。 The additional circuit includes a high frequency filter according to claim 1 including an element for shifting the amplitude level of the pass characteristics in the frequency domain.

前記付加回路部は、
弾性波素子を有する弾性波素子部と、
前記弾性波素子部と前記第１の信号端との間に設けられた第１の容量素子と、
前記弾性波素子部と前記第２の信号端との間に設けられた第２の容量素子と
を含む請求項２の高周波フィルタ。 The additional circuit section is
An acoustic wave element having an acoustic wave element;
A first capacitive element provided between the first signal terminal and the acoustic wave element,
High frequency filter of claim 2 including a second capacitive element provided between the second signal terminal and the acoustic wave element part.

前記フィルタ部及び前記付加回路部は同一の圧電基板に形成される請求項１の高周波フィルタ。 The high-frequency filter according to claim 1, wherein the filter unit and the additional circuit unit are formed on the same piezoelectric substrate.

高周波フィルタであって、
アンテナ端子と、
送信端子と、
受信端子と、
前記アンテナ端子と前記送信端子との間に接続された送信フィルタと、
前記アンテナ端子と前記受信端子との間に接続された受信フィルタと
を含み、
前記送信フィルタ又は前記受信フィルタは圧電基板の上に設けられた第１のＩＤＴ電極を有し、
前記アンテナ端子、前記送信端子及び前記受信端子の少なくとも二つの間には位相回路が接続され、
前記位相回路は前記圧電基板の上に設けられた第２のＩＤＴ電極を有し、
前記第１のＩＤＴ電極と前記第２のＩＤＴ電極とは前記圧電基板を伝搬する弾性波の伝搬方向において重なる領域を有し、
前記圧電基板の上における前記第１のＩＤＴ電極と前記第２のＩＤＴ電極との間に前記弾性波を吸収する吸収体が設けられる高周波フィルタ。 A high frequency filter ,
An antenna terminal;
A transmission terminal;
A receiving terminal;
A transmission filter connected between the antenna terminal and the transmission terminal;
A reception filter connected between the antenna terminal and the reception terminal;
Including
It said transmission filter or the reception filter has a first IDT electrode provided on the pressure conductive substrate,
The antenna terminals, the phase circuit is connected between at least two of the transmission terminal and the receiving terminal,
The phase circuit has a second IDT electrode provided on the piezoelectric substrate,
Wherein the first IDT electrode and the second IDT electrode has a region overlapping in the direction of propagation of the elastic wave propagating through the piezoelectric substrate,
The high frequency filter absorber is provided for absorbing the acoustic wave between your Keru said first IDT electrode and the second IDT electrode on the piezoelectric substrate.

前記吸収体は、樹脂材料からなる請求項８の高周波フィルタ。 The high-frequency filter according to claim 8 , wherein the absorber is made of a resin material.

前記吸収体と前記圧電基板との間には電極が設けられる請求項８の高周波フィルタ。 High frequency filter of claim 8 in which the electrode is provided between the piezoelectric substrate and the absorber.

前記第１のＩＤＴ電極及び前記第２のＩＤＴ電極を封止するカバー体をさらに含み、
前記吸収体は前記カバー体の一部を構成する請求項８記載の高周波フィルタ。 Further comprising a cover member for sealing the first IDT electrode and the second IDT electrode,
The high frequency filter according to claim 8, wherein the absorber constitutes a part of the cover body.

高周波フィルタであって、
アンテナ端子と、
送信端子と、
受信端子と、
前記アンテナ端子と前記送信端子との間に接続された送信フィルタと、
前記アンテナ端子と前記受信端子との間に接続された受信フィルタと
を含み、
前記送信フィルタ又は前記受信フィルタは圧電基板の上に設けられた第１のＩＤＴ電極を有し、
前記アンテナ端子、前記送信端子及び前記受信端子の少なくとも二つの間には位相回路が接続され、
前記位相回路は前記圧電基板の上に設けられた第２のＩＤＴ電極を有し、
前記第１のＩＤＴ電極と前記第２のＩＤＴ電極とは前記圧電基板を伝搬する弾性波の伝搬方向において重なる領域を有し、
前記圧電基板の上における前記第１のＩＤＴ電極と前記第２のＩＤＴ電極との間に電極が設けられ、
前記電極の前記第１のＩＤＴ電極側の端辺又は前記第２のＩＤＴ電極側の端辺が前記伝搬方向に対して非垂直に構成される高周波フィルタ。 A high frequency filter,
An antenna terminal;
A transmission terminal;
A receiving terminal;
A transmission filter connected between the antenna terminal and the transmission terminal;
A reception filter connected between the antenna terminal and the reception terminal;
Including
It said transmission filter or the reception filter has a first IDT electrode provided on the pressure conductive substrate,
The antenna terminals, the phase circuit is connected between at least two of the transmission terminal and the receiving terminal,
The phase circuit has a second IDT electrode provided on the piezoelectric substrate,
Wherein the first IDT electrode and the second IDT electrode has a region overlapping in the direction of propagation of the elastic wave propagating through the piezoelectric substrate,
Electrodes are provided between the said and our Keru said first IDT electrode on the piezoelectric substrate and the second IDT electrode,
Said first IDT electrode side end side or the second IDT electrode side non-vertical constructed high-frequency filter end side with respect to said propagation direction of the electrode.

前記第１のＩＤＴ電極の交差幅は、前記第２のＩＤＴ電極の交差幅よりも大きい請求項８又は１２の高周波フィルタ。 The high frequency filter according to claim 8 or 12, wherein a cross width of the first IDT electrode is larger than a cross width of the second IDT electrode.

前記位相回路は２つのＩＤＴ電極を有するトランスバーサルフィルタである請求項８又は１２の高周波フィルタ。 The high-frequency filter according to claim 8 or 12, wherein the phase circuit is a transversal filter having two IDT electrodes.

前記位相回路は前記アンテナ端子と前記送信端子との間に接続される請求項８又は１２の高周波フィルタ。 It said phase circuit according to claim 8 or 1 2 of the high frequency filter Ru is connected between the transmitting terminal and the antenna terminal.

前記素子は容量素子である請求項５の高周波フィルタ。The high frequency filter according to claim 5, wherein the element is a capacitive element.

前記第１の容量素子の静電容量は、前記第２の容量素子の静電容量よりも小さく設定される請求項６の高周波フィルタ。The high frequency filter according to claim 6, wherein a capacitance of the first capacitive element is set smaller than a capacitance of the second capacitive element.

前記第１及び第２の容量素子それぞれの静電容量は、前記２個のＩＤＴ電極それぞれの静電容量よりも小さく設定される請求項１７の高周波フィルタ。18. The high frequency filter according to claim 17, wherein each of the first and second capacitive elements has a capacitance set smaller than a capacitance of each of the two IDT electrodes.

前記２個のＩＤＴ電極それぞれの電極指ピッチが、前記フィルタ部の電極指ピッチよりも小さく構成される請求項６の高周波フィルタ。The high frequency filter according to claim 6, wherein an electrode finger pitch of each of the two IDT electrodes is configured to be smaller than an electrode finger pitch of the filter unit.

前記電極は、前記アンテナ端子と前記位相回路とを接続する配線電極である請求項１０の高周波フィルタ。The high-frequency filter according to claim 10, wherein the electrode is a wiring electrode that connects the antenna terminal and the phase circuit.

前記電極は、反射器電極パターンを形成する請求項１０の高周波フィルタ。The high-frequency filter according to claim 10, wherein the electrode forms a reflector electrode pattern.

前記電極は、浮き電極パターンを形成する請求項１０の高周波フィルタ。The high-frequency filter according to claim 10, wherein the electrode forms a floating electrode pattern.

前記浮き電極パターンは、三角形状を有するように構成される請求項２２の高周波フィルタ。The high-frequency filter according to claim 22, wherein the floating electrode pattern is configured to have a triangular shape.

前記送信フィルタは、複数の直列腕弾性波共振器及び複数の並列腕弾性波共振器から構成されたラダー回路を含む請求項８又は１２の高周波フィルタ。The high-frequency filter according to claim 8 or 12, wherein the transmission filter includes a ladder circuit including a plurality of series arm elastic wave resonators and a plurality of parallel arm elastic wave resonators.

前記受信フィルタは、前記アンテナ端子と一対の受信端子とグランド端子との間に接続された一端子対弾性波共振器及び縦結合弾性波共振器を含む請求項８又は１２の高周波フィルタ。The high-frequency filter according to claim 8 or 12, wherein the reception filter includes a one-terminal pair acoustic wave resonator and a longitudinally coupled acoustic wave resonator connected between the antenna terminal, the pair of reception terminals, and a ground terminal.