JP2013243570A5 - - Google Patents

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JP2013243570A5
JP2013243570A5 JP2012116192A JP2012116192A JP2013243570A5 JP 2013243570 A5 JP2013243570 A5 JP 2013243570A5 JP 2012116192 A JP2012116192 A JP 2012116192A JP 2012116192 A JP2012116192 A JP 2012116192A JP 2013243570 A5 JP2013243570 A5 JP 2013243570A5
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wave device
acoustic wave
reference electrode
wiring
piezoelectric substrate
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本発明の実施の形態3における弾性波装置104の電気特性を図12に示す。図12において、横軸は周波数、縦軸は減衰量であり、本発明の実施の形態における弾性波装置10の電気特性Dを実線で示し、本発明の実施の形態1における弾性波装置101の電気特性Aを一点破線で示し、本発明の実施の形態1で説明した比較例の電気特性Eを破線で示す。図12において、通過帯域Sは送信帯域である704MHz〜716MHzであり、734MHz〜746MHzの受信帯域Tは、通過帯域Sの高域側の帯域外にある。
FIG. 12 shows the electrical characteristics of the acoustic wave device 104 according to Embodiment 3 of the present invention. 12, the horizontal axis represents frequency and the vertical axis is attenuation, showing the electrical characteristics D of the acoustic wave device 104 according to the third embodiment of the present invention in solid lines, acoustic wave device according to the first embodiment of the present invention An electrical characteristic A 101 is indicated by a one-dot broken line, and an electrical characteristic E of the comparative example described in the first embodiment of the present invention is indicated by a broken line. In FIG. 12, the pass band S is 704 MHz to 716 MHz, which is a transmission band, and the reception band T of 734 MHz to 746 MHz is outside the high band side band of the pass band S.

図12に示すように、本発明の実施の形態における弾性波装置10の電気特性Dは、本発明の実施の形態1における弾性波装置101の電気特性Aに近い特性を有する領域もあるが、通過帯域Sの高域部において挿入損失をより低減することができた。
As shown in FIG. 12, the electrical characteristics D of the acoustic wave device 104 according to the third embodiment of the present invention, there is also a region having characteristics similar to the electrical characteristics A of the acoustic wave device 101 according to the first embodiment of the present invention However, the insertion loss can be further reduced in the high band part of the pass band S.

Claims (16)

2つの信号端子の間に接続され、圧電基板の表面に形成された第1の配線と、
前記第1の配線に直列に接続され、一端子対弾性波素子を含む直列腕共振器と、
第1の基準電位端子に接続され、前記圧電基板の表面に形成された第1の基準電極と、
前記第1の配線上に設けられた接続点と前記第1の基準電極との間に接続された第2の配線と、
前記第2の配線に直列に接続され、一端子対弾性波素子を含む並列腕共振器とを備え、
第2の基準電位端子に接続され、前記圧電基板の表面において前記第1の基準電極から電気的に分離された第2の基準電極を設け、
前記第2の基準電極と前記接続点とを接続する第3の配線を設け、
前記第3の配線に直列に第1の容量素子を接続した弾性波装置。
A first wiring connected between the two signal terminals and formed on the surface of the piezoelectric substrate;
A series arm resonator connected in series to the first wiring and including a one-terminal acoustic wave element;
A first reference electrode connected to a first reference potential terminal and formed on the surface of the piezoelectric substrate;
A second wiring connected between a connection point provided on the first wiring and the first reference electrode;
A parallel arm resonator connected in series to the second wiring and including a one-terminal acoustic wave element;
A second reference electrode connected to a second reference potential terminal and electrically separated from the first reference electrode on the surface of the piezoelectric substrate;
Providing a third wiring connecting the second reference electrode and the connection point;
An elastic wave device in which a first capacitive element is connected in series to the third wiring.
前記第1の基準電極を前記圧電基板の表面の第1の端辺の側に形成し、
前記第2の基準電極を前記圧電基板の表面の第1の端辺と対向する第2の端辺の側に形成した請求項1記載の弾性波装置。
Forming the first reference electrode on the first end side of the surface of the piezoelectric substrate;
The acoustic wave device according to claim 1, wherein the second reference electrode is formed on a second end side facing the first end side of the surface of the piezoelectric substrate.
前記第1の基準電位端子と前記第2の基準電位端子とを、同一の電位を有する基準電位端子として形成する請求項1又は2に記載の弾性波装置。 Wherein the first reference potential terminal and said second reference potential terminal, the acoustic wave device according to claim 1 or 2, formed as a reference potential terminal having the same potential. 前記同一の電位はグランド電位である請求項3記載の弾性波装置。4. The acoustic wave device according to claim 3, wherein the same potential is a ground potential. 前記並列腕共振器に並列に第2の容量素子を接続した請求項1乃至4のいずれか一項記載の弾性波装置。 The acoustic wave device according to any one of claims 1 to 4 and connecting the second capacitive element in parallel with the parallel arm resonator. 前記直列腕共振器を複数備え、前記直列腕共振器のうち、他の直列腕共振器を介さずに前記信号端子の一方に接続された直列腕共振器に、第3の容量素子が並列接続されていることを特徴とする請求項1乃至5のいずれか一項記載の弾性波装置。 The series arm example multiple Bei the resonator, of the pre Kijika column resonators, the connected series arm resonators to one of the signal terminals without passing through the other serial arm resonator, a third capacitance acoustic wave device of any one of claims 1 to 5, characterized in that elements are connected in parallel. 前記弾性波装置の占有面積は前記圧電基板の占有面積とほぼ等しい請求項1記載の弾性波装置。 The elastic wave device according to claim 1, wherein an occupied area of the elastic wave device is substantially equal to an occupied area of the piezoelectric substrate. 前記容量素子は2枚の平行平板で誘電体を挟むように構成される請求項1記載の弾性波装置。The acoustic wave device according to claim 1, wherein the capacitive element is configured to sandwich a dielectric between two parallel flat plates. 前記容量素子は櫛型電極を含む請求項1記載の弾性波装置。The acoustic wave device according to claim 1, wherein the capacitive element includes a comb-shaped electrode. 前記直列腕共振器と前記並列腕共振器とはラダー型フィルタを形成する請求項1記載の弾性波装置。The acoustic wave device according to claim 1, wherein the series arm resonator and the parallel arm resonator form a ladder type filter. 前記圧電基板の表面に、励振空間を介して前記直列腕共振器及び前記並列腕共振器を封止する封止体をさらに含む請求項1記載の弾性波装置。The acoustic wave device according to claim 1, further comprising a sealing body that seals the series arm resonator and the parallel arm resonator through an excitation space on a surface of the piezoelectric substrate. 前記第1及び前記第2の基準電極はそれぞれ、前記封止体を貫通する導体を含むインダクタを経由して前記第1及び第2の基準電位端子に接続される請求項11記載の弾性波装置。The acoustic wave device according to claim 11, wherein the first and second reference electrodes are respectively connected to the first and second reference potential terminals via an inductor including a conductor penetrating the sealing body. . 前記第2の基準電極が複数の基準電極部分に分割される請求項1記載の弾性波装置。The acoustic wave device according to claim 1, wherein the second reference electrode is divided into a plurality of reference electrode portions. 前記並列腕共振器を複数備え、前記並列腕共振器の1つが前記基準電極部分の1つに接続される請求項13記載の弾性波装置。The acoustic wave device according to claim 13, comprising a plurality of the parallel arm resonators, wherein one of the parallel arm resonators is connected to one of the reference electrode portions. 前記1つ以外の前記並列腕共振器が前記1つ以外の前記基準電極部分に接続される請求項14記載の弾性波装置。The elastic wave device according to claim 14, wherein the parallel arm resonators other than the one are connected to the reference electrode portions other than the one. 弾性表面波、弾性境界波、及びバルク波のいずれか1つが用いられる請求項1乃至15のいずれか一項記載の弾性波装置。The elastic wave device according to claim 1, wherein any one of a surface acoustic wave, a boundary acoustic wave, and a bulk wave is used.
JP2012116192A 2012-05-22 2012-05-22 Elastic wave device Active JP5955095B2 (en)

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CN106031037B (en) 2014-02-10 2018-11-30 株式会社村田制作所 Variable filter circuit and wireless communication device
US9608595B1 (en) * 2015-11-13 2017-03-28 Resonant Inc. Acoustic wave filter with enhanced rejection
US10305447B2 (en) 2015-11-13 2019-05-28 Resonant Inc. Acoustic wave filter with enhanced rejection

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JP3201017B2 (en) * 1992-11-13 2001-08-20 株式会社村田製作所 Ladder type surface acoustic wave filter
JPH09167937A (en) * 1995-12-18 1997-06-24 Oki Electric Ind Co Ltd Surface acoustic wave filter
JP3380417B2 (en) * 1997-02-12 2003-02-24 沖電気工業株式会社 Polarized surface acoustic wave filter
DE19932649A1 (en) * 1999-07-13 2001-02-08 Epcos Ag Reactance filter type SAW filter with improved stop band suppression and method for optimizing the stop band suppression
JP4382945B2 (en) * 2000-01-31 2009-12-16 京セラ株式会社 Surface acoustic wave device
JP3827232B2 (en) * 2003-05-13 2006-09-27 Tdk株式会社 Filter device and duplexer using the same
JP2005033246A (en) * 2003-07-07 2005-02-03 Matsushita Electric Ind Co Ltd Saw filter and electronic device using the same
JP2005093465A (en) * 2003-09-12 2005-04-07 Murata Mfg Co Ltd Thin film capacitor, piezoelectric filter and its manufacturing process, demultiplexer, and communication device
US9021669B2 (en) * 2006-08-07 2015-05-05 Kyocera Corporation Method for manufacturing surface acoustic wave apparatus
WO2009153916A1 (en) * 2008-06-16 2009-12-23 株式会社村田製作所 Elastic boundary wave device
JP2010011300A (en) * 2008-06-30 2010-01-14 Murata Mfg Co Ltd Resonator device, filter including the same, and duplexer

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