JP2013243570A5 - - Google Patents
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- JP2013243570A5 JP2013243570A5 JP2012116192A JP2012116192A JP2013243570A5 JP 2013243570 A5 JP2013243570 A5 JP 2013243570A5 JP 2012116192 A JP2012116192 A JP 2012116192A JP 2012116192 A JP2012116192 A JP 2012116192A JP 2013243570 A5 JP2013243570 A5 JP 2013243570A5
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- JP
- Japan
- Prior art keywords
- wave device
- acoustic wave
- reference electrode
- wiring
- piezoelectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 7
- 238000007789 sealing Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 230000000149 penetrating Effects 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Description
本発明の実施の形態3における弾性波装置104の電気特性を図12に示す。図12において、横軸は周波数、縦軸は減衰量であり、本発明の実施の形態3における弾性波装置104の電気特性Dを実線で示し、本発明の実施の形態1における弾性波装置101の電気特性Aを一点破線で示し、本発明の実施の形態1で説明した比較例の電気特性Eを破線で示す。図12において、通過帯域Sは送信帯域である704MHz〜716MHzであり、734MHz〜746MHzの受信帯域Tは、通過帯域Sの高域側の帯域外にある。
FIG. 12 shows the electrical characteristics of the acoustic wave device 104 according to Embodiment 3 of the present invention. 12, the horizontal axis represents frequency and the vertical axis is attenuation, showing the electrical characteristics D of the acoustic wave device 104 according to the third embodiment of the present invention in solid lines, acoustic wave device according to the first embodiment of the present invention An electrical characteristic A 101 is indicated by a one-dot broken line, and an electrical characteristic E of the comparative example described in the first embodiment of the present invention is indicated by a broken line. In FIG. 12, the pass band S is 704 MHz to 716 MHz, which is a transmission band, and the reception band T of 734 MHz to 746 MHz is outside the high band side band of the pass band S.
図12に示すように、本発明の実施の形態3における弾性波装置104の電気特性Dは、本発明の実施の形態1における弾性波装置101の電気特性Aに近い特性を有する領域もあるが、通過帯域Sの高域部において挿入損失をより低減することができた。
As shown in FIG. 12, the electrical characteristics D of the acoustic wave device 104 according to the third embodiment of the present invention, there is also a region having characteristics similar to the electrical characteristics A of the acoustic wave device 101 according to the first embodiment of the present invention However, the insertion loss can be further reduced in the high band part of the pass band S.
Claims (16)
前記第1の配線に直列に接続され、一端子対弾性波素子を含む直列腕共振器と、
第1の基準電位端子に接続され、前記圧電基板の表面に形成された第1の基準電極と、
前記第1の配線上に設けられた接続点と前記第1の基準電極との間に接続された第2の配線と、
前記第2の配線に直列に接続され、一端子対弾性波素子を含む並列腕共振器とを備え、
第2の基準電位端子に接続され、前記圧電基板の表面において前記第1の基準電極から電気的に分離された第2の基準電極を設け、
前記第2の基準電極と前記接続点とを接続する第3の配線を設け、
前記第3の配線に直列に第1の容量素子を接続した弾性波装置。 A first wiring connected between the two signal terminals and formed on the surface of the piezoelectric substrate;
A series arm resonator connected in series to the first wiring and including a one-terminal acoustic wave element;
A first reference electrode connected to a first reference potential terminal and formed on the surface of the piezoelectric substrate;
A second wiring connected between a connection point provided on the first wiring and the first reference electrode;
A parallel arm resonator connected in series to the second wiring and including a one-terminal acoustic wave element;
A second reference electrode connected to a second reference potential terminal and electrically separated from the first reference electrode on the surface of the piezoelectric substrate;
Providing a third wiring connecting the second reference electrode and the connection point;
An elastic wave device in which a first capacitive element is connected in series to the third wiring.
前記第2の基準電極を前記圧電基板の表面の第1の端辺と対向する第2の端辺の側に形成した請求項1記載の弾性波装置。 Forming the first reference electrode on the first end side of the surface of the piezoelectric substrate;
The acoustic wave device according to claim 1, wherein the second reference electrode is formed on a second end side facing the first end side of the surface of the piezoelectric substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012116192A JP5955095B2 (en) | 2012-05-22 | 2012-05-22 | Elastic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012116192A JP5955095B2 (en) | 2012-05-22 | 2012-05-22 | Elastic wave device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013243570A JP2013243570A (en) | 2013-12-05 |
JP2013243570A5 true JP2013243570A5 (en) | 2015-04-30 |
JP5955095B2 JP5955095B2 (en) | 2016-07-20 |
Family
ID=49844038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012116192A Active JP5955095B2 (en) | 2012-05-22 | 2012-05-22 | Elastic wave device |
Country Status (1)
Country | Link |
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JP (1) | JP5955095B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106031037B (en) | 2014-02-10 | 2018-11-30 | 株式会社村田制作所 | Variable filter circuit and wireless communication device |
US9608595B1 (en) * | 2015-11-13 | 2017-03-28 | Resonant Inc. | Acoustic wave filter with enhanced rejection |
US10305447B2 (en) | 2015-11-13 | 2019-05-28 | Resonant Inc. | Acoustic wave filter with enhanced rejection |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3201017B2 (en) * | 1992-11-13 | 2001-08-20 | 株式会社村田製作所 | Ladder type surface acoustic wave filter |
JPH09167937A (en) * | 1995-12-18 | 1997-06-24 | Oki Electric Ind Co Ltd | Surface acoustic wave filter |
JP3380417B2 (en) * | 1997-02-12 | 2003-02-24 | 沖電気工業株式会社 | Polarized surface acoustic wave filter |
DE19932649A1 (en) * | 1999-07-13 | 2001-02-08 | Epcos Ag | Reactance filter type SAW filter with improved stop band suppression and method for optimizing the stop band suppression |
JP4382945B2 (en) * | 2000-01-31 | 2009-12-16 | 京セラ株式会社 | Surface acoustic wave device |
JP3827232B2 (en) * | 2003-05-13 | 2006-09-27 | Tdk株式会社 | Filter device and duplexer using the same |
JP2005033246A (en) * | 2003-07-07 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Saw filter and electronic device using the same |
JP2005093465A (en) * | 2003-09-12 | 2005-04-07 | Murata Mfg Co Ltd | Thin film capacitor, piezoelectric filter and its manufacturing process, demultiplexer, and communication device |
US9021669B2 (en) * | 2006-08-07 | 2015-05-05 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
WO2009153916A1 (en) * | 2008-06-16 | 2009-12-23 | 株式会社村田製作所 | Elastic boundary wave device |
JP2010011300A (en) * | 2008-06-30 | 2010-01-14 | Murata Mfg Co Ltd | Resonator device, filter including the same, and duplexer |
-
2012
- 2012-05-22 JP JP2012116192A patent/JP5955095B2/en active Active
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