JP2014165498A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2014165498A JP2014165498A JP2014032071A JP2014032071A JP2014165498A JP 2014165498 A JP2014165498 A JP 2014165498A JP 2014032071 A JP2014032071 A JP 2014032071A JP 2014032071 A JP2014032071 A JP 2014032071A JP 2014165498 A JP2014165498 A JP 2014165498A
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- Prior art keywords
- light emitting
- emitting diode
- light
- emitting device
- layer
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- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000009877 rendering Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 114
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】赤色波長を有する第1の発光ダイオードチップ、前記第1の発光ダイオードチップと異なる赤色波長を有する第2の発光ダイオードチップ、及び前記第1及び第2の発光ダイオードチップの周辺に配置された複数の第3の発光ダイオードチップを含み、太陽光に類似する波長帯の光を出射することを特徴とする発光装置を構成する。
【選択図】図1
Description
Claims (13)
- 赤色波長を有する第1の発光ダイオードチップ、
前記第1の発光ダイオードチップと異なる赤色波長を有する第2の発光ダイオードチップ、及び
前記第1及び第2の発光ダイオードチップの周辺に配置された複数の第3の発光ダイオードチップを含み、
太陽光に類似する波長帯の光を出射することを特徴とする発光装置。 - 前記複数の第3の発光ダイオードチップは、複数の井戸層と複数の障壁層とが交互に積層された量子井戸構造の活性層を有し、前記複数の井戸層は、少なくとも2つの異なる厚さを有する、請求項1に記載の発光装置。
- 前記第3の発光ダイオードチップは、
前記活性層の一面上に配置されたn型半導体層、及び
前記活性層の他面上に配置されたp型半導体層を含み、
前記複数の井戸層は、前記n型半導体層と近接した少なくとも一つの第1の井戸層と、前記p型半導体層と近接した少なくとも一つの第2の井戸層と、を含み、
前記第2の井戸層の厚さは、前記第1の井戸層の厚さより厚い、請求項1に記載の発光装置。 - 前記少なくとも一つの第2の井戸層は、互いに異なる厚さを有する、請求項3に記載の発光装置。
- 前記少なくとも一つの第1の井戸層は均一な厚さを有する、請求項3に記載の発光装置。
- 前記第1の井戸層は410nmの波長を有する光を出射する、請求項3に記載の発光装置。
- 前記第2の井戸層は450nmの波長を有する光を出射する、請求項3に記載の発光装置。
- 前記井戸層はInxGa1−xN(0≦x≦1)の組成式を有し、前記障壁層はInyGa1−yN(0≦y≦1)の組成式を有する、請求項1に記載の発光装置。
- 前記第1の発光ダイオードチップは600nmないし630nmの波長を有する光を出射する、請求項1に記載の発光装置。
- 前記第2の発光ダイオードチップは630nmないし660nmの波長を有する光を出射する、請求項8に記載の発光装置。
- 前記第1ないし第3の発光ダイオードチップが実装される基板をさらに含み、
前記基板上には互いに対称の第1及び第2の導電性パターンを含む、請求項1に記載の発光装置。 - 前記第1及び第2の発光ダイオードチップは、前記基板の中心部を基準にして両側に離隔するように配置され、前記第1の発光ダイオードチップは前記第1の導電性パターンと接続され、前記第2の発光ダイオードチップは前記第2の導電性パターンと接続された、請求項11に記載の発光装置。
- 前記複数の第3の発光ダイオードチップは、前記基板の縁部領域と隣接するように互いに離隔されて配置され、垂直、水平及び対角線方向に互いに対称に前記第1及び第2の導電性パターンに接続された、請求項11に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0021385 | 2013-02-27 | ||
KR1020130021385A KR20140108756A (ko) | 2013-02-27 | 2013-02-27 | 발광 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014165498A true JP2014165498A (ja) | 2014-09-08 |
Family
ID=51387936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014032071A Pending JP2014165498A (ja) | 2013-02-27 | 2014-02-21 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9123560B2 (ja) |
JP (1) | JP2014165498A (ja) |
KR (1) | KR20140108756A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6291800B2 (ja) * | 2012-12-26 | 2018-03-14 | 日亜化学工業株式会社 | 半導体装置およびその製造方法 |
TWI577042B (zh) * | 2015-07-15 | 2017-04-01 | 南臺科技大學 | 發光二極體晶片及數據發射及接收裝置 |
KR102602245B1 (ko) * | 2016-02-12 | 2023-11-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN109154762B (zh) * | 2016-05-19 | 2021-10-26 | 苏州乐琻半导体有限公司 | 闪光灯模块和包括闪光灯模块的终端 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001156328A (ja) * | 1999-11-30 | 2001-06-08 | Hitachi Cable Ltd | 発光素子用エピタキシャルウェハおよび発光素子 |
US20080121902A1 (en) * | 2006-09-07 | 2008-05-29 | Gelcore Llc | Small footprint high power light emitting package with plurality of light emitting diode chips |
JP2009065137A (ja) * | 2007-08-09 | 2009-03-26 | Toshiba Lighting & Technology Corp | 発光装置 |
JP2009099893A (ja) * | 2007-10-19 | 2009-05-07 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
JP2010508621A (ja) * | 2006-10-31 | 2010-03-18 | ティーアイアール テクノロジー エルピー | 発光クラスタを有する光源 |
JP3168550U (ja) * | 2011-04-05 | 2011-06-16 | 柏友照明科技股▲分▼有限公司 | 光混合式マルチチップパッケージ構造 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6079629B2 (ja) * | 2011-07-25 | 2017-02-15 | 日亜化学工業株式会社 | 発光装置 |
JP5776599B2 (ja) * | 2012-03-26 | 2015-09-09 | 東芝ライテック株式会社 | 発光モジュール及び照明装置 |
-
2013
- 2013-02-27 KR KR1020130021385A patent/KR20140108756A/ko not_active Application Discontinuation
-
2014
- 2014-02-21 JP JP2014032071A patent/JP2014165498A/ja active Pending
- 2014-02-27 US US14/191,749 patent/US9123560B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001156328A (ja) * | 1999-11-30 | 2001-06-08 | Hitachi Cable Ltd | 発光素子用エピタキシャルウェハおよび発光素子 |
US20080121902A1 (en) * | 2006-09-07 | 2008-05-29 | Gelcore Llc | Small footprint high power light emitting package with plurality of light emitting diode chips |
JP2010508621A (ja) * | 2006-10-31 | 2010-03-18 | ティーアイアール テクノロジー エルピー | 発光クラスタを有する光源 |
JP2009065137A (ja) * | 2007-08-09 | 2009-03-26 | Toshiba Lighting & Technology Corp | 発光装置 |
JP2009099893A (ja) * | 2007-10-19 | 2009-05-07 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
JP3168550U (ja) * | 2011-04-05 | 2011-06-16 | 柏友照明科技股▲分▼有限公司 | 光混合式マルチチップパッケージ構造 |
Also Published As
Publication number | Publication date |
---|---|
US20140240975A1 (en) | 2014-08-28 |
KR20140108756A (ko) | 2014-09-15 |
US9123560B2 (en) | 2015-09-01 |
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