JP2014135435A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229920000642 polymer Polymers 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 28
- 238000001020 plasma etching Methods 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000005191 phase separation Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 5
- 230000008520 organization Effects 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 229920001400 block copolymer Polymers 0.000 description 12
- 239000010410 layer Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000009154 spontaneous behavior Effects 0.000 description 1
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3105—After-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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Abstract
【解決手段】本実施形態によれば、半導体装置の製造方法は、半導体基板上にシリコン膜を形成し、前記シリコン膜上にシリコン酸化膜又はシリコン窒化膜を有する絶縁膜を形成し、前記絶縁膜上に凹凸を有する物理ガイドを形成し、前記物理ガイドの凹部に、第1ポリマー及び第2ポリマーを含む自己組織化材料層を形成し、前記自己組織化材料層を、前記第1ポリマーを含む第1領域と前記第2ポリマーを含む第2領域とに相分離し、前記第2領域を除去し、前記物理ガイド及び前記第1領域をマスクに用いて前記絶縁膜を加工し、前記絶縁膜に前記第2領域に対応したパターンを転写する。そして、前記パターンが転写された前記絶縁膜、前記物理ガイド、及び前記第1領域をマスクに用いて前記シリコン膜を加工する。
【選択図】図5
Description
102 TEOS膜
104 アモルファスシリコン膜
106 有機膜
108 シリコン膜
110 自然酸化膜
112 有機膜
114 SOG膜
116 レジスト
120 ミクロ相分離パターン
Claims (5)
- 半導体基板上に複数の第1膜及び第2膜が交互に積層された積層膜を形成し、
前記積層膜上に有機膜を形成し、
チャンバ内で前記有機膜上にシリコン膜を形成し、
前記チャンバから前記半導体基板を搬出し、前記シリコン膜を大気に曝して前記シリコン膜上にシリコン酸化膜を形成し、
前記シリコン酸化膜上に凹凸を有する物理ガイドを形成し、
前記物理ガイドの凹部に、第1ポリマー及び第2ポリマーを含む自己組織化材料層を形成し、
前記自己組織化材料層を、前記第1ポリマーを含む第1領域と前記第2ポリマーを含む第2領域とに相分離し、
前記第2領域を除去し、
前記物理ガイド及び前記第1領域をマスクに用いて前記シリコン酸化膜を加工し、前記シリコン酸化膜に前記第2領域に対応したパターンを転写し、
前記パターンが転写された前記シリコン酸化膜、前記物理ガイド、及び前記第1領域をマスクに用いて前記シリコン膜を反応性イオンエッチングにより加工し、
前記シリコン膜の加工時に使用するガスはHBr及びO2を含み、圧力は15mT以下、イオンエネルギーが300eV以下であり、
前記第2領域はシリンダー形状を有し、前記第1領域は前記第2領域の側面及び底面を囲むように設けられることを特徴とする半導体装置の製造方法。 - 半導体基板上にシリコン膜を形成し、
前記シリコン膜上にシリコン酸化膜又はシリコン窒化膜を有する絶縁膜を形成し、
前記絶縁膜上に凹凸を有する物理ガイドを形成し、
前記物理ガイドの凹部に、第1ポリマー及び第2ポリマーを含む自己組織化材料層を形成し、
前記自己組織化材料層を、前記第1ポリマーを含む第1領域と前記第2ポリマーを含む第2領域とに相分離し、
前記第2領域を除去し、
前記物理ガイド及び前記第1領域をマスクに用いて前記絶縁膜を加工し、前記絶縁膜に前記第2領域に対応したパターンを転写し、
前記パターンが転写された前記絶縁膜、前記物理ガイド、及び前記第1領域をマスクに用いて前記シリコン膜を加工する半導体装置の製造方法。 - チャンバ内で前記シリコン膜を形成し、
前記チャンバから前記半導体基板を搬出し、前記シリコン膜を大気に曝して前記シリコン酸化膜を形成することを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記シリコン膜を反応性イオンエッチングにより加工し、加工時に使用するガスはHBr及びO2を含み、圧力は15mT以下、イオンエネルギーが300eV以下であることを特徴とする請求項2又は3に記載の半導体装置の製造方法。
- 前記第2領域はシリンダー形状を有し、
前記第1領域は前記第2領域の側面及び底面を囲むように設けられることを特徴とする請求項2乃至4のいずれかに記載の半導体装置の製造方法。
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US9922991B2 (en) | 2016-03-16 | 2018-03-20 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
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US9059092B2 (en) | 2013-09-17 | 2015-06-16 | Taiwan Semiconductor Manufacturing Company Limited | Chemical dielectric formation for semiconductor device fabrication |
JP6033987B1 (ja) * | 2014-12-19 | 2016-11-30 | Hoya株式会社 | マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 |
US9899220B2 (en) | 2015-12-15 | 2018-02-20 | Imec Vzw | Method for patterning a substrate involving directed self-assembly |
CN108400085B (zh) * | 2017-02-06 | 2019-11-19 | 联华电子股份有限公司 | 形成半导体元件图案的方法 |
US10157775B2 (en) * | 2017-04-10 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing a semiconductor device |
CN111261514A (zh) * | 2018-11-30 | 2020-06-09 | 东京毅力科创株式会社 | 基片处理方法 |
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JP2008036491A (ja) * | 2006-08-03 | 2008-02-21 | Nippon Telegr & Teleph Corp <Ntt> | パターン形成方法及びモールド |
US20090212016A1 (en) * | 2008-02-22 | 2009-08-27 | International Business Machines Corporation | Aligning polymer films |
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US5665203A (en) * | 1995-04-28 | 1997-09-09 | International Business Machines Corporation | Silicon etching method |
EP2225774A4 (en) * | 2007-12-27 | 2013-04-24 | Toshiba Kk | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR |
JP2012054283A (ja) | 2010-08-31 | 2012-03-15 | Toshiba Corp | 半導体装置の製造方法 |
JP5171909B2 (ja) | 2010-09-16 | 2013-03-27 | 株式会社東芝 | 微細パターンの形成方法 |
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JP2006000978A (ja) * | 2004-06-18 | 2006-01-05 | Konica Minolta Holdings Inc | シリコン基板加工方法、光学素子用金型、光学素子用金型母型、光学素子及び回折格子 |
JP2008036491A (ja) * | 2006-08-03 | 2008-02-21 | Nippon Telegr & Teleph Corp <Ntt> | パターン形成方法及びモールド |
US20090212016A1 (en) * | 2008-02-22 | 2009-08-27 | International Business Machines Corporation | Aligning polymer films |
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US9922991B2 (en) | 2016-03-16 | 2018-03-20 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
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