JP2014036092A - 光電変換装置 - Google Patents
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 122
- 230000005499 meniscus Effects 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims description 60
- 239000011347 resin Substances 0.000 claims description 50
- 229920005989 resin Polymers 0.000 claims description 50
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 188
- 238000000034 method Methods 0.000 description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 43
- 229910052814 silicon oxide Inorganic materials 0.000 description 43
- 230000008569 process Effects 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 17
- 238000000576 coating method Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 230000006378 damage Effects 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 230000003685 thermal hair damage Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910000878 H alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical class C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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Abstract
【解決手段】 レンズアレイは複数の凸メニスカスレンズを含み、凸メニスカスレンズは、凸メニスカスレンズよりも低い屈折率を有するとともに、凸メニスカスレンズの凹面に沿った凸面を有する第1部材と、凸メニスカスレンズよりも低い屈折率を有するとともに、凸メニスカスレンズの凸面に沿った凹面を有する第2部材と、の間に位置し、第1部材は凸メニスカスレンズと光電変換部との間に位置する。
【選択図】 図1
Description
310 層内レンズアレイ
301 層内レンズ
320 凸部材
330 凹部材
Claims (12)
- 複数の光電変換部が配列された光電変換領域と、前記光電変換領域の上に設けられたレンズアレイと、を備える光電変換装置であって、
前記レンズアレイは複数の凸メニスカスレンズを含み、
前記凸メニスカスレンズは、
前記凸メニスカスレンズよりも低い屈折率を有するとともに、前記凸メニスカスレンズの凹面に沿った凸面を有する第1部材と、前記凸メニスカスレンズよりも低い屈折率を有するとともに、前記凸メニスカスレンズの凸面に沿った凹面を有する第2部材と、の間に位置し、
前記第1部材は前記凸メニスカスレンズと前記光電変換部との間に位置することを特徴とする光電変換装置。 - 前記レンズアレイと前記光電変換領域との間には、複数の導光路が配列されている請求項1に記載の光電変換装置。
- 前記第1部材の屈折率が前記第2部材の屈折率以上である請求項1または2に記載の光電変換装置。
- 前記第2部材の前記凸メニスカスレンズとは反対側の面は前記第2部材の前記凹面に比べて平坦である請求項1乃至3のいずれか1項に記載の光電変換装置。
- 互いに隣り合う前記凸メニスカスレンズの前記凸面同士が境界を成している請求項1乃至4のいずれか1項に記載の光電変換装置。
- 互いに隣り合う前記凸メニスカスレンズの前記凹面同士が離れている請求項1乃至5のいずれか1項に記載の光電変換装置。
- 前記凸メニスカスレンズの前記凸面の投影面積が、前記凸メニスカスレンズの前記凹面の投影面積よりも大きい請求項1乃至6のいずれか1項に記載の光電変換装置。
- 前記レンズアレイよりも前記光電変換領域から離れて位置する第2のレンズアレイを備え、前記第2のレンズアレイは複数の凸レンズを含み、前記凸メニスカスレンズの前記凸面の曲率が前記凸レンズの凸面の曲率よりも大きい請求項1乃至7のいずれか1項に記載の光電変換装置。
- 前記導光路の導光部の材料は樹脂である請求項1乃至8のいずれか1項に記載の光電変換装置。
- 前記第1部材および前記第2部材の材料は樹脂である請求項1乃至9のいずれか1項に記載の光電変換装置。
- 前記凸メニスカスレンズの材料は窒化シリコンおよび酸窒化シリコンの少なくとも一方である請求項1乃至10のいずれか1項に記載の光電変換装置。
- 前記第1部材と前記光電変換部とに間には、前記第1部材よりも高い屈折率を有する第3部材が位置する請求項1乃至11のいずれか1項に記載の光電変換装置。
Priority Applications (3)
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JP2012176028A JP2014036092A (ja) | 2012-08-08 | 2012-08-08 | 光電変換装置 |
US13/960,539 US9214578B2 (en) | 2012-08-08 | 2013-08-06 | Photoelectric conversion apparatus |
CN201310342596.9A CN103579273B (zh) | 2012-08-08 | 2013-08-08 | 光电转换装置 |
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JP2012176028A JP2014036092A (ja) | 2012-08-08 | 2012-08-08 | 光電変換装置 |
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JP2014036092A true JP2014036092A (ja) | 2014-02-24 |
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JP2012176028A Pending JP2014036092A (ja) | 2012-08-08 | 2012-08-08 | 光電変換装置 |
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US (1) | US9214578B2 (ja) |
JP (1) | JP2014036092A (ja) |
CN (1) | CN103579273B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016171252A (ja) * | 2015-03-13 | 2016-09-23 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2018011278A (ja) * | 2016-07-15 | 2018-01-18 | 株式会社ニコン | 撮像装置 |
WO2019198385A1 (ja) * | 2018-04-09 | 2019-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置およびその製造方法、電子機器 |
Families Citing this family (8)
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JP2016015430A (ja) * | 2014-07-03 | 2016-01-28 | ソニー株式会社 | 固体撮像素子および電子機器 |
JP6598436B2 (ja) * | 2014-08-08 | 2019-10-30 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
CN105304664B (zh) * | 2015-10-29 | 2019-02-22 | 上海华力微电子有限公司 | 一种cmos图像传感器的结构及其制备方法 |
JP6744748B2 (ja) | 2016-04-06 | 2020-08-19 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
US10475847B2 (en) * | 2016-04-28 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having stress-neutralized film stack and method of fabricating same |
US11398512B2 (en) * | 2019-12-19 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo-sensing device and manufacturing method thereof |
CN114400235A (zh) * | 2022-01-16 | 2022-04-26 | Nano科技(北京)有限公司 | 一种背照射光探测阵列结构及其制备方法 |
CN116435325B (zh) * | 2023-06-13 | 2023-09-08 | 合肥晶合集成电路股份有限公司 | 背照式图像传感器及其形成方法 |
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2012
- 2012-08-08 JP JP2012176028A patent/JP2014036092A/ja active Pending
-
2013
- 2013-08-06 US US13/960,539 patent/US9214578B2/en not_active Expired - Fee Related
- 2013-08-08 CN CN201310342596.9A patent/CN103579273B/zh not_active Expired - Fee Related
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JP2016171252A (ja) * | 2015-03-13 | 2016-09-23 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2018011278A (ja) * | 2016-07-15 | 2018-01-18 | 株式会社ニコン | 撮像装置 |
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Also Published As
Publication number | Publication date |
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US20140042576A1 (en) | 2014-02-13 |
CN103579273B (zh) | 2016-08-24 |
US9214578B2 (en) | 2015-12-15 |
CN103579273A (zh) | 2014-02-12 |
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