JP2014022487A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2014022487A JP2014022487A JP2012158405A JP2012158405A JP2014022487A JP 2014022487 A JP2014022487 A JP 2014022487A JP 2012158405 A JP2012158405 A JP 2012158405A JP 2012158405 A JP2012158405 A JP 2012158405A JP 2014022487 A JP2014022487 A JP 2014022487A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- semiconductor device
- gate electrode
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 40
- 238000002955 isolation Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 77
- 239000010410 layer Substances 0.000 description 64
- 238000000034 method Methods 0.000 description 49
- 210000000746 body region Anatomy 0.000 description 33
- 239000012535 impurity Substances 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 238000010586 diagram Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- -1 phosphorus ions Chemical class 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】第1導電型の半導体基板と、半導体基板内に形成された第2導電型の第1領域と、第1領域内に形成された第1導電型の第2領域と、第2領域内に形成された第2導電型のソース領域と、第1領域内に形成された第2導電型のドレイン領域と、第1領域と第2領域との境界のドレイン領域側の一部を有する第1接合部と、第1接合部とは異なる位置の第1領域と第2の領域との境界の一部を有する第2接合部と、第1接合部の上方に形成されたゲート電極と、第2接合部の上方に形成され、前記ゲート電極から電気的に独立した導電体とを有する。
【選択図】図1
Description
12…シリコン酸化膜
14,22,42,50,54…フォトレジスト膜
16,44,52…n型不純物領域
18…n型ドリフト領域
20…素子分離絶縁膜
20a,20b,20c,20d,20e,20f,20g,20h…活性領域
24,46,56…p型不純物領域
26…p型ボディ領域
28…pウェル
30…nウェル
32,34…ゲート絶縁膜
36,40…ゲート電極
38…導電体パターン
48…サイドウォール絶縁膜
58…n型ドレイン領域
60…n型ソース領域
62,68…p型タップ領域
64…p型コンタクト領域
66…n型ソース/ドレイン領域
70…p型ソース/ドレイン領域
72…n型コンタクト領域
74…層間絶縁膜
76…コンタクトプラグ
78,78a,78b,78c,78d,80,80a,80b,80d…配線層
102,104…pn接合部
110…p型寄生トランジスタ
Claims (9)
- 第1導電型の半導体基板と、
前記半導体基板内に形成された、前記第1導電型と反対の第2導電型の第1領域と、
前記第1領域内に形成された前記第1導電型の第2領域と、
前記第2領域内に形成された前記第2導電型のソース領域と、
前記第1領域内に形成された前記第2導電型のドレイン領域と、
前記第1領域と前記第2領域との境界の、前記ドレイン領域側の一部を有する第1接合部と、
前記第1接合部とは異なる位置の、前記第1領域と前記第2の領域との境界の一部を有する第2接合部と、
前記第1接合部の上方に形成されたゲート電極と、
前記第2接合部の上方に形成され、前記ゲート電極から電気的に独立した導電体と
を有することを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記導電体は、前記半導体基板に電気的に接続されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極は、第1の幅を有し、
前記導電体は、前記第1の幅よりも太い第2の幅を有する
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極及び前記導電体は、前記第2の領域を囲むように環状に配置されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記導電体は、前記ゲート電極の近傍に位置する第1の部分と、前記第1の部分に接続された第2の部分とを有し、
前記第1の部分の幅は、前記第2の部分の幅よりも細い
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記導電体は、素子分離絶縁膜を介して前記第2接合部の上方に形成されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ソース領域は、前記第1の接合部から第1の距離を離れて位置し、
前記ドレイン領域は、前記第1の接合部から前記第1の距離よりも長い第2の距離を離れて位置している
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極と前記導電体とは、同一の材料により形成されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記半導体基板及び前記導電体に第1の電圧が印加され、
前記第2の領域に前記第1の電圧よりも低い第2の電圧が印加される
ことを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012158405A JP5983122B2 (ja) | 2012-07-17 | 2012-07-17 | 半導体装置 |
US13/915,088 US9054185B2 (en) | 2012-07-17 | 2013-06-11 | Semiconductor device |
CN201310300798.7A CN103545374B (zh) | 2012-07-17 | 2013-07-17 | 半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012158405A JP5983122B2 (ja) | 2012-07-17 | 2012-07-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014022487A true JP2014022487A (ja) | 2014-02-03 |
JP5983122B2 JP5983122B2 (ja) | 2016-08-31 |
Family
ID=49945844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012158405A Expired - Fee Related JP5983122B2 (ja) | 2012-07-17 | 2012-07-17 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9054185B2 (ja) |
JP (1) | JP5983122B2 (ja) |
CN (1) | CN103545374B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6198292B2 (ja) * | 2012-08-17 | 2017-09-20 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US9153691B1 (en) | 2014-07-22 | 2015-10-06 | Qualcomm Incorporated | High voltage MOS transistor |
ITUB20161081A1 (it) * | 2016-02-25 | 2017-08-25 | St Microelectronics Srl | Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore |
JP7300968B2 (ja) * | 2019-11-14 | 2023-06-30 | 三菱電機株式会社 | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02138773A (ja) * | 1988-05-25 | 1990-05-28 | Toshiba Corp | Mosfet |
JPH09289305A (ja) * | 1996-04-19 | 1997-11-04 | Rohm Co Ltd | 半導体装置 |
JPH09293859A (ja) * | 1996-04-25 | 1997-11-11 | Rohm Co Ltd | 半導体装置 |
US20070090454A1 (en) * | 2005-10-26 | 2007-04-26 | Huang Chin D | Transistor device |
JP2010147181A (ja) * | 2008-12-17 | 2010-07-01 | Mitsubishi Electric Corp | 半導体装置 |
JP2012104678A (ja) * | 2010-11-11 | 2012-05-31 | Fujitsu Semiconductor Ltd | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US6900101B2 (en) * | 2003-06-13 | 2005-05-31 | Texas Instruments Incorporated | LDMOS transistors and methods for making the same |
JP5280056B2 (ja) | 2008-01-10 | 2013-09-04 | シャープ株式会社 | Mos電界効果トランジスタ |
JP5458809B2 (ja) | 2009-11-02 | 2014-04-02 | 富士電機株式会社 | 半導体装置 |
US8546889B2 (en) * | 2010-06-04 | 2013-10-01 | Fuji Electric Co., Ltd. | Semiconductor device and driving circuit |
-
2012
- 2012-07-17 JP JP2012158405A patent/JP5983122B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-11 US US13/915,088 patent/US9054185B2/en not_active Expired - Fee Related
- 2013-07-17 CN CN201310300798.7A patent/CN103545374B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02138773A (ja) * | 1988-05-25 | 1990-05-28 | Toshiba Corp | Mosfet |
JPH09289305A (ja) * | 1996-04-19 | 1997-11-04 | Rohm Co Ltd | 半導体装置 |
JPH09293859A (ja) * | 1996-04-25 | 1997-11-11 | Rohm Co Ltd | 半導体装置 |
US20070090454A1 (en) * | 2005-10-26 | 2007-04-26 | Huang Chin D | Transistor device |
JP2010147181A (ja) * | 2008-12-17 | 2010-07-01 | Mitsubishi Electric Corp | 半導体装置 |
JP2012104678A (ja) * | 2010-11-11 | 2012-05-31 | Fujitsu Semiconductor Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN103545374B (zh) | 2017-04-26 |
JP5983122B2 (ja) | 2016-08-31 |
US9054185B2 (en) | 2015-06-09 |
CN103545374A (zh) | 2014-01-29 |
US20140021546A1 (en) | 2014-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6713453B2 (ja) | カスケードされたリサーフ注入及び二重バッファを備えるldmosデバイスのための方法及び装置 | |
TWI725087B (zh) | 半導體結構及相關之製造方法 | |
US8716791B1 (en) | LDMOS with corrugated drift region | |
KR102068395B1 (ko) | 낮은 소스-드레인 저항을 갖는 반도체 소자 구조 및 그 제조 방법 | |
US9660020B2 (en) | Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same | |
KR101531882B1 (ko) | 반도체 소자 및 그 제조 방법 | |
TW200950086A (en) | Semiconductor device having transistor and method of manufacturing the same | |
JP2018101683A (ja) | 半導体装置およびその製造方法 | |
JP5983122B2 (ja) | 半導体装置 | |
KR20110078621A (ko) | 반도체 소자 및 그 제조 방법 | |
JP2007019200A (ja) | 半導体装置およびその製造方法 | |
JP2013012577A (ja) | 半導体装置 | |
TW201519446A (zh) | 橫向雙擴散金屬氧化物半導體元件及其製造方法 | |
JP2010177292A (ja) | 半導体装置及び半導体装置の製造方法 | |
CN107871782B (zh) | 双扩散金属氧化物半导体元件及其制造方法 | |
US20070090454A1 (en) | Transistor device | |
WO2017175544A1 (ja) | 半導体装置およびその製造方法 | |
JP5585404B2 (ja) | 半導体装置 | |
TWI553867B (zh) | 半導體裝置及其製造方法 | |
US20150194424A1 (en) | Semiconductor device and method for manufacturing the same | |
JP2017162920A (ja) | 半導体装置及びその製造方法 | |
JP2014154862A (ja) | 半導体装置 | |
TWI794969B (zh) | 半導體元件及其製造方法 | |
KR20110078946A (ko) | 반도체 소자 및 그의 제조방법 | |
US10497790B2 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20131107 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150402 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160426 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160613 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160718 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5983122 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |