JP2013541208A - オプトエレクトロニクス半導体デバイス - Google Patents
オプトエレクトロニクス半導体デバイス Download PDFInfo
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Abstract
Description
垂直方向Vにおいて、担体1の接続箇所13上にそれぞれ1つの層開口部32が配置されている。この層開口部は、担体1の側とは反対側の、ビーム透過層4の外面33から、担体1の下側12の方向において完全に、ビーム透過層4も、ビーム吸収層3も通って延在する。
Claims (15)
- オプトエレクトロニクス半導体デバイス(100)であって、
担体(1)と、少なくとも1つのビーム放射半導体部材(2)と、ビーム吸収層(3)とを有しており、
・前記担体(1)は、上側(11)と当該上側(11)に対向している下側(12)とを有しており、
・前記ビーム放射半導体部材(2)は前記上側(11)に配置されており、ビーム出射面(6)を有しており、前記半導体部材(2)の動作中に生成された電磁ビームの少なくとも一部が当該ビーム出射面(6)を通って当該半導体部材(2)を離れ、
・前記ビーム吸収層(3)は、前記デバイス(100)に入射する周辺光を吸収するように構成されており、これによって、前記担体(1)の側と反対側にある、前記デバイス(100)の外面(101)が少なくとも部分的に黒く見え、
ここで、
・前記ビーム吸収層(3)は前記ビーム放射半導体部材(2)を横方向(L)において完全に包囲しており、かつ、前記ビーム放射半導体部材(2)の側面(23)と少なくとも部分的に直接的に接触接続しており、
・前記ビーム出射面(6)には、前記ビーム吸収層(3)は設けられていない、
ことを特徴とする、オプトエレクトロニクス半導体デバイス(100)。 - 前記半導体デバイスの前記外面(101)は少なくとも部分的に、前記ビーム吸収層(3)の外面(31)によって形成されている、請求項1記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記ビーム吸収層(3)は注封コンパウンドであり、当該注封コンパウンドは前記半導体部材(2)の前記側面(23)を少なくとも部分的に形状接続によって包囲している、請求項1または2記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記ビーム吸収層(3)は、垂直方向(V)において前記半導体部材(2)を超えない、請求項1から3までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 垂直方向(V)において、前記担体(1)と前記ビーム吸収層(3)との間にビーム反射層(5)が配置されており、当該ビーム反射層(5)は前記半導体部材(2)の前記側面を部分的に覆っている、請求項1から4までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記半導体部材(2)から放射される電磁ビーム全体のうちの少なくとも20%が前記側面(23)を通って前記半導体部材(2)から出射し、かつ、ビーム反射層(5)によって少なくとも部分的に反射される、請求項1から5までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記担体(1)の側とは反対側にある、前記ビーム吸収層(3)の外面(31)上に、および/または、前記ビーム出射面(6)上に、少なくとも部分的にビーム透過層(4)が被着されている、請求項1から6までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- ・前記担体(1)の少なくとも1つの接続箇所(13)上に配置されている少なくとも1つの層開口部(32)を有しており、当該層開口部(32)は前記ビーム吸収層(3)を貫通し、かつ、前記担体(1)の側とは反対側にある、前記ビーム吸収層(3)の上側(31)から、前記担体(1)の下側(12)の方向へと延在しており、ここで
・前記層開口部(32)は横方向(L)において、前記半導体部材(2)と間隔をあけて配置されており、
・前記層開口部(32)内には少なくとも部分的に導電性材料(7)が配置されており、
・前記導電性材料(7)は少なくとも部分的に、前記担体(1)の側とは反対側の、前記デバイス(100)の前記外面(101)上に配置されており、
・前記導電性材料(7)は前記接続箇所(13)と、前記半導体部材(2)とを導電性接続する、請求項1から7までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。 - 前記接続箇所(13)と前記担体(1)の上側に設けられているさらなる接続箇所(2A)との間の少なくとも1つの導電性接続は、前記上側(11)に対向している、前記担体(1)の下側(12)に設けられているコンタクト面(14A、14B)によって、ビア(15)を用いて形成されている、請求項1から8までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記層開口部(32)は付加的に前記ビーム反射層(5)および/または前記ビーム透過層(4)を貫通している、請求項1から9までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記担体(1)の上側(11)において横方向(L)で並列に配置されている少なくとも2つのビーム放射半導体部材(2)を有しており、ここで当該ビーム放射半導体部材(2)の少なくとも2つは異なる色の光を放射する、請求項1から10までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記半導体部材(2)のボンディングワイヤーコンタクト(9)は、少なくとも部分的に、前記ビーム吸収層(3)によって覆われている、請求項1から11までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記担体(1)の上側(11)に配置されておりかつ完全に前記ビーム吸収層(3)によって覆われている、少なくとも1つの電子部品(20)を有している、請求項1から12までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記導電性材料(7)は部分的に直に前記ビーム吸収層(3)と接している、請求項1から13までのいずれか一項記載のオプトエレクトロニクス半導体デバイス(100)。
- 前記導電性材料(7)はビーム透過性であり、殊に透けて見え、かつ、透明である、請求項14記載のオプトエレクトロニクス半導体デバイス(100)。
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DE102010046254A DE102010046254A1 (de) | 2010-09-22 | 2010-09-22 | Optoelektronisches Halbleiterbauelement |
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PCT/EP2011/066458 WO2012038483A2 (de) | 2010-09-22 | 2011-09-21 | Optoelektronisches halbleiterbauelement |
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EP (1) | EP2619809B1 (ja) |
JP (1) | JP5855108B2 (ja) |
KR (2) | KR20130058750A (ja) |
CN (2) | CN103210510B (ja) |
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JP2017522734A (ja) * | 2014-07-18 | 2017-08-10 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 自動車アプリケーションのためのled光源 |
JP2017532786A (ja) * | 2014-11-05 | 2017-11-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品の製造方法およびオプトエレクトロニクス部品 |
JP2020010022A (ja) * | 2018-07-02 | 2020-01-16 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングDr. Johannes Heidenhain Gesellschaft Mit Beschrankter Haftung | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
CN112103377A (zh) * | 2019-06-18 | 2020-12-18 | 斯坦雷电气株式会社 | 发光装置 |
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DE102010048162A1 (de) * | 2010-10-11 | 2012-04-12 | Osram Opto Semiconductors Gmbh | Konversionsbauteil |
USD731987S1 (en) * | 2012-12-28 | 2015-06-16 | Nichia Corporation | Light emitting diode |
DE102014116512A1 (de) * | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Vorrichtung mit einem optoelektronischen Halbleiterbauelement |
WO2016080768A1 (ko) * | 2014-11-18 | 2016-05-26 | 서울반도체 주식회사 | 발광 장치 및 이를 포함하는 차량용 램프 |
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US11152553B2 (en) * | 2019-01-15 | 2021-10-19 | Seoul Viosys Co., Ltd. | Light emitting device package and display device having the same |
CN117423689A (zh) | 2019-05-24 | 2024-01-19 | 晶元光电股份有限公司 | 封装体与显示模块 |
DE102021106332A1 (de) * | 2021-03-16 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische baugruppe, displayanordnung und verfahren |
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- 2011-09-21 KR KR1020157006661A patent/KR101645303B1/ko active IP Right Grant
- 2011-09-21 JP JP2013529645A patent/JP5855108B2/ja not_active Expired - Fee Related
- 2011-09-21 US US13/825,600 patent/US9153735B2/en not_active Expired - Fee Related
- 2011-09-21 CN CN201610214827.1A patent/CN105702842B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
CN105702842A (zh) | 2016-06-22 |
WO2012038483A3 (de) | 2012-05-24 |
KR20130058750A (ko) | 2013-06-04 |
US9153735B2 (en) | 2015-10-06 |
EP2619809A2 (de) | 2013-07-31 |
US20130285084A1 (en) | 2013-10-31 |
EP2619809B1 (de) | 2018-07-18 |
WO2012038483A2 (de) | 2012-03-29 |
KR20150038667A (ko) | 2015-04-08 |
CN105702842B (zh) | 2018-04-24 |
DE102010046254A1 (de) | 2012-04-19 |
CN103210510A (zh) | 2013-07-17 |
JP5855108B2 (ja) | 2016-02-09 |
KR101645303B1 (ko) | 2016-08-03 |
CN103210510B (zh) | 2016-05-04 |
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