JP2013524531A - 極紫外線光源 - Google Patents
極紫外線光源 Download PDFInfo
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- JP2013524531A JP2013524531A JP2013503803A JP2013503803A JP2013524531A JP 2013524531 A JP2013524531 A JP 2013524531A JP 2013503803 A JP2013503803 A JP 2013503803A JP 2013503803 A JP2013503803 A JP 2013503803A JP 2013524531 A JP2013524531 A JP 2013524531A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
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- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【選択図】 図1
Description
105 ターゲット位置
114 ターゲット材料
122 集束アセンブリ
135 集光ミラー
155 主コントローラ
Claims (24)
- ビーム経路に沿って増幅光ビームを生成し、内部表面を形成するチャンバ内のターゲット材料を照射して極紫外線を発生させるように構成され、光源波長の光を増幅するための利得媒体を含む光源と、
前記チャンバの前記内部表面の少なくとも一部分の上に重なり、かつ前記ビーム経路に沿って戻る該内部表面からの前記光源波長の光の流れを低減するように構成されたサブシステムと、
を含むことを特徴とする装置。 - 前記光源は、レーザ光源であり、前記増幅光ビームは、レーザビームであることを特徴とする請求項1に記載の装置。
- 前記サブシステムは、少なくとも1つのベーンを含むことを特徴とする請求項1に記載の装置。
- 前記少なくとも1つのベーンは、チャンバ壁から前記増幅光ビームの経路内に延びるように構成されることを特徴とする請求項3に記載の装置。
- 前記少なくとも1つのベーンは、前記増幅光ビームの中心の通過のための中心開口領域を形成する円錐形状を有することを特徴とする請求項3に記載の装置。
- 前記サブシステムは、前記ターゲット材料の化合物を少なくとも1つのガス及び少なくとも1つの固体に化学的に分解して該ガスの前記チャンバの内部から除去を可能にするように構成されることを特徴とする請求項1に記載の装置。
- 前記ターゲット材料化合物は、水素化錫を含み、前記少なくとも1つのガスは、水素であり、前記少なくとも1つの固体は、濃縮された錫であることを特徴とする請求項6に記載の装置。
- 前記濃縮された錫は、溶融状態にあることを特徴とする請求項7に記載の装置。
- 前記光源波長は、赤外線波長範囲にあることを特徴とする請求項1に記載の装置。
- 前記光源は、1つ又はそれよりも多くの電力増幅器を含むことを特徴とする請求項1に記載の装置。
- 前記光源は、1つ又はそれよりも多くの電力増幅器にシード光を供給する主発振器を含むことを特徴とする請求項1に記載の装置。
- 前記サブシステムは、前記内部チャンバ表面に接触することを特徴とする請求項1に記載の装置。
- 前記サブシステムは、コーティングを含むことを特徴とする請求項1に記載の装置。
- 前記コーティングは、反射防止コーティングであることを特徴とする請求項13に記載の装置。
- 前記コーティングは、吸収反射防止コーティングであることを特徴とする請求項13に記載の装置。
- 前記コーティングは、干渉コーティングであることを特徴とする請求項13に記載の装置。
- 極紫外線を生成する方法であって、
真空チャンバの内部内のターゲット位置でターゲット材料を生成する段階と、
駆動レーザシステム内の少なくとも1つの光増幅器の利得媒体にポンプエネルギを供給し、それによって光源波長の増幅光ビームを生成する段階と、
ビーム経路に沿って前記増幅光ビームを誘導し、それによって前記ターゲット材料を照射して極紫外線を発生させる段階と、
前記真空チャンバの内部表面から前記ビーム経路までの前記光源波長の光の流れを低減する段階と、
を含むことを特徴とする方法。 - 前記増幅光ビームが前記ターゲット位置と交差して前記ターゲット材料に衝突する時に該ターゲット材料から放出される前記発生された極紫外線を集光する段階を更に含むことを特徴とする請求項17に記載の方法。
- 前記光源波長の光の流れを低減する段階は、前記ビーム経路と異なる経路に沿って前記増幅光ビームの少なくとも一部分を誘導する段階を含むことを特徴とする請求項17に記載の方法。
- 前記光源波長の光の流れを低減する段階は、チャンバサブシステムの2つのベーンの間に前記増幅光ビームの少なくとも一部分を反射する段階を含むことを特徴とする請求項17に記載の方法。
- 前記少なくとも1つの光増幅器の前記利得媒体にポンプエネルギを供給する段階は、前記光源波長のレーザビームを生成することを特徴とする請求項17に記載の方法。
- 前記ターゲット材料の化合物を少なくとも1つのガス及び少なくとも1つの固体に化学的に分解して該ガスの前記チャンバの前記内部からの除去を可能にする段階を更に含むことを特徴とする請求項17に記載の方法。
- 前記化合物を化学的に分解する段階は、水素化錫を水素及び濃縮された錫に化学的に分解する段階を含むことを特徴とする請求項22に記載の方法。
- 前記真空チャンバの前記内部表面から前記ビーム経路までの前記光源波長の前記光の流れを低減するチャンバサブシステム内に前記濃縮された錫を捕捉する段階を更に含むことを特徴とする請求項23に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/753,938 US8368039B2 (en) | 2010-04-05 | 2010-04-05 | EUV light source glint reduction system |
US12/753,938 | 2010-04-05 | ||
PCT/US2011/030974 WO2011126947A1 (en) | 2010-04-05 | 2011-04-01 | Extreme ultraviolet light source |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013524531A true JP2013524531A (ja) | 2013-06-17 |
JP2013524531A5 JP2013524531A5 (ja) | 2014-05-29 |
JP5593554B2 JP5593554B2 (ja) | 2014-09-24 |
Family
ID=44708533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013503803A Active JP5593554B2 (ja) | 2010-04-05 | 2011-04-01 | 極紫外線光源 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8368039B2 (ja) |
JP (1) | JP5593554B2 (ja) |
KR (1) | KR101747120B1 (ja) |
TW (1) | TWI469692B (ja) |
WO (1) | WO2011126947A1 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
KR101747120B1 (ko) | 2017-06-27 |
KR20130022404A (ko) | 2013-03-06 |
TW201143539A (en) | 2011-12-01 |
WO2011126947A1 (en) | 2011-10-13 |
US8368039B2 (en) | 2013-02-05 |
US20110240890A1 (en) | 2011-10-06 |
JP5593554B2 (ja) | 2014-09-24 |
TWI469692B (zh) | 2015-01-11 |
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