JP2013510425A - エッチング液組成物 - Google Patents
エッチング液組成物 Download PDFInfo
- Publication number
- JP2013510425A JP2013510425A JP2012536650A JP2012536650A JP2013510425A JP 2013510425 A JP2013510425 A JP 2013510425A JP 2012536650 A JP2012536650 A JP 2012536650A JP 2012536650 A JP2012536650 A JP 2012536650A JP 2013510425 A JP2013510425 A JP 2013510425A
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- film
- aluminum
- etching
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 65
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010936 titanium Substances 0.000 claims abstract description 29
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 28
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052738 indium Inorganic materials 0.000 claims abstract description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000002506 iron compounds Chemical class 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims description 21
- 239000011733 molybdenum Substances 0.000 claims description 18
- 239000011737 fluorine Substances 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 11
- -1 phosphate compound Chemical class 0.000 claims description 10
- 229910019142 PO4 Inorganic materials 0.000 claims description 8
- 239000010452 phosphate Substances 0.000 claims description 8
- ZWOQODLNWUDJFT-UHFFFAOYSA-N aluminum lanthanum Chemical compound [Al].[La] ZWOQODLNWUDJFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910020366 ClO 4 Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 2
- 229910000403 monosodium phosphate Inorganic materials 0.000 claims description 2
- 235000019799 monosodium phosphate Nutrition 0.000 claims description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000011698 potassium fluoride Substances 0.000 claims description 2
- 235000003270 potassium fluoride Nutrition 0.000 claims description 2
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 claims description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 2
- 239000011775 sodium fluoride Substances 0.000 claims description 2
- 235000013024 sodium fluoride Nutrition 0.000 claims description 2
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 150000002222 fluorine compounds Chemical class 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000858 La alloy Inorganic materials 0.000 description 2
- 229910020794 La-Ni Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- SFASQLIGRADPEE-UHFFFAOYSA-N [AlH3].[Ni].[La] Chemical compound [AlH3].[Ni].[La] SFASQLIGRADPEE-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】本発明のエッチング液組成物は、組成物の総重量に対して、鉄化合物0.1重量%〜10重量%、硝酸0.1重量%〜10重量%、含フッ素化合物0.01重量%〜5重量%、及び水残部を含むことを特徴とする。
【選択図】なし
Description
下記表1に記載された成分及び組成比によって、エッチング液組成物が180kgとなるように製造した。
<エッチング特性評価>
試験用基板としては、ガラス上にITO/Al−La−Ni/Ti又はITO/Al−La−Ni/Mo三重膜が蒸着されており、一定形態の模様にフォトレジストがパターニングされたものを使用した。噴射式エッチング方式の実験装備(SEMES社製、モデル名:ETCHER(TFT))内に前記実施例1〜8及び比較例1〜7のエッチング液組成物を仕込み、温度を30℃にセットして加温した。その後、温度が30±0.1°に到達した後、エッチング工程を行った。総エッチング時間をEPDを基準として30%にした。試片を入れて噴射を開始し、エッチングが完了すると、取り出して脱イオン水で洗浄した後、熱風乾燥装置を用いて乾燥させ、フォトレジスト(PR)剥離器(stripper)を用いてフォトレジストを除去した。洗浄及び乾燥の後、電子走査顕微鏡(SEM:HITACHI社製、モデル名:S−4700)を用いてエッチングプロファイルの傾斜角、サイドエッチ(CD:critical dimension)損失、エッチング残留物及び下部膜の損傷を評価した。その結果を下記表2に示す。
◎:極めて優秀(CD Skew:≦1μm、テーパー角:40°〜80°)
○:優秀(CD Skew:≦1.5μm、テーパー角:40°〜80°)
△:良好(CD Skew:≦2μm、テーパー角:40°〜80°)
×:不良(金属膜の消失及び残渣発生)
Claims (7)
- 組成物の総重量に対して、
鉄化合物0.1重量%〜10重量%、
硝酸0.1重量%〜10重量%、
含フッ素化合物0.01重量%〜5重量%、
及び水残部を含むことを特徴とする、インジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。 - 組成物の総重量に対して、
鉄化合物1重量%〜7重量%、
硝酸2重量%〜7重量%、
含フッ素化合物0.1重量%〜2重量%、
及び水残部を含むことを特徴とする、請求項1に記載のインジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。 - 前記鉄化合物は、FeCl3、Fe(NO3)3、Fe2(SO4)3、NH4Fe(SO4)2、Fe(ClO4)3、FePO4、およびFe(NH4)-3(C2O4)3よりなる群から選ばれる1種又は2種以上であることを特徴とする、請求項1に記載のインジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。
- 前記含フッ素化合物は、フッ化アンモニウム、フッ化ナトリウム、フッ化カリウム、重フッ化アンモニウム、重フッ化ナトリウム及び重フッ化カリウムよりなる群から選ばれる1種又は2種以上であることを特徴とする、請求項1に記載のインジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。
- 前記エッチング液組成物はリン酸塩化合物0.1重量%〜5重量%をさらに含むことを特徴とする、請求項1に記載のインジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。
- 前記リン酸塩化合物は、リン酸二水素ナトリウム、リン酸二水素カリウム、およびこれらの組み合わせよりなる群から選ばれる1種であることを特徴とする、請求項5に記載のインジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。
- 前記アルミニウム系金属膜は、アルミニウム90原子%以上、La10原子%以下、及び他の金属(X)残部を含むAl−La又はAl−La−Xで表されるアルミニウム−ランタニウム系合金膜であり、ここで、前記他の金属(X)はMg、Zn、In、Ca、Te、Sr、Cr、Co、Mo、Nb、Ta、W、Ni、Nd、Sn、Fe、Si、Ti、Pt及びCよりなる群から選ばれる1種又は2種以上であることを特徴とする、 請求項1に記載のインジウム系金属膜、アルミニウム系金属膜、及びチタニウム系又はモリブデン系金属膜からなる三重膜用エッチング液組成物。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0105674 | 2009-11-03 | ||
KR20090105674 | 2009-11-03 | ||
KR20090105901 | 2009-11-04 | ||
KR10-2009-0105901 | 2009-11-04 | ||
KR10-2010-0097748 | 2010-10-07 | ||
KR1020100097748A KR101804572B1 (ko) | 2009-11-03 | 2010-10-07 | 식각액 조성물 |
PCT/KR2010/006956 WO2011055915A2 (ko) | 2009-11-03 | 2010-10-12 | 식각액 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013510425A true JP2013510425A (ja) | 2013-03-21 |
JP5788400B2 JP5788400B2 (ja) | 2015-09-30 |
Family
ID=44360756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012536650A Active JP5788400B2 (ja) | 2009-11-03 | 2010-10-12 | エッチング液組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5788400B2 (ja) |
KR (1) | KR101804572B1 (ja) |
CN (1) | CN102597163B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011151287A (ja) * | 2010-01-25 | 2011-08-04 | Tosoh Corp | タングステンのエッチング液 |
JP2016025321A (ja) * | 2014-07-24 | 2016-02-08 | 関東化學株式会社 | エッチング液組成物およびエッチング方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102142382B1 (ko) * | 2014-03-17 | 2020-08-07 | 동우 화인켐 주식회사 | 니켈계 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 |
CN104060267A (zh) * | 2014-07-17 | 2014-09-24 | 深圳市卓力达电子有限公司 | 一种用于金属钼片的化学蚀刻方法 |
KR102623996B1 (ko) * | 2016-11-10 | 2024-01-11 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 식각방법 및 이를 이용한 표시 장치용 어레이 기판의 제조방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358195B2 (en) * | 2003-04-01 | 2008-04-15 | Lg.Philips Lcd Co., Ltd. | Method for fabricating liquid crystal display device |
KR100575233B1 (ko) * | 2003-11-04 | 2006-05-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조 방법 |
KR101264421B1 (ko) * | 2005-12-09 | 2013-05-14 | 동우 화인켐 주식회사 | 금속막 식각용액 |
KR101299131B1 (ko) * | 2006-05-10 | 2013-08-22 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각 조성물 |
KR101294968B1 (ko) * | 2006-11-20 | 2013-08-09 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 식각방법 |
KR20080045854A (ko) * | 2006-11-21 | 2008-05-26 | 동우 화인켐 주식회사 | 액정표시장치용 tft 어레이 기판의 제조방법 |
US20080224092A1 (en) * | 2007-03-15 | 2008-09-18 | Samsung Electronics Co., Ltd. | Etchant for metal |
KR101284390B1 (ko) * | 2007-06-13 | 2013-07-09 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
-
2010
- 2010-10-07 KR KR1020100097748A patent/KR101804572B1/ko active IP Right Grant
- 2010-10-12 JP JP2012536650A patent/JP5788400B2/ja active Active
- 2010-10-12 CN CN201080050506.3A patent/CN102597163B/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011151287A (ja) * | 2010-01-25 | 2011-08-04 | Tosoh Corp | タングステンのエッチング液 |
JP2016025321A (ja) * | 2014-07-24 | 2016-02-08 | 関東化學株式会社 | エッチング液組成物およびエッチング方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5788400B2 (ja) | 2015-09-30 |
KR20110049671A (ko) | 2011-05-12 |
KR101804572B1 (ko) | 2017-12-05 |
CN102597163A (zh) | 2012-07-18 |
CN102597163B (zh) | 2014-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5753180B2 (ja) | エッチング液組成物 | |
TWI524428B (zh) | 液晶顯示器用之陣列基板及其製造方法以及蝕刻銅系金屬層之方法及其蝕刻劑組成物 | |
CN102822391B (zh) | 用于含铜和钛的金属层的蚀刻液组合物 | |
KR102137013B1 (ko) | 표시장치용 어레이 기판의 제조방법 | |
JP5788400B2 (ja) | エッチング液組成物 | |
CN101130870A (zh) | 钛、铝金属层叠膜蚀刻液组合物 | |
TW201313879A (zh) | 用於金屬互連體之蝕刻劑以及使用其以製備液晶顯示元件的方法 | |
TWI614550B (zh) | 液晶顯示裝置用陣列基板的製備方法及其多層膜用蝕刻液組合物 | |
JP5706434B2 (ja) | エッチング液組成物 | |
CN102471687A (zh) | 用于形成金属互连的刻蚀剂组合物 | |
KR102505196B1 (ko) | 구리계 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 | |
KR101674679B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
KR20160108945A (ko) | 몰리브덴 함유 금속막의 식각액 조성물 및 이를 이용한 액정표시 장치용 어레이 기판의 제조방법 | |
KR102092338B1 (ko) | 액정 표시 장치용 어레이 기판의 제조 방법 | |
KR101636572B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
KR20110016724A (ko) | 금속 배선 형성을 위한 식각액 조성물 | |
TWI679307B (zh) | 蝕刻劑組合物、液晶顯示器陣列基板製作方法和陣列基板 | |
JP2023138936A (ja) | エッチング液組成物 | |
TWI665289B (zh) | 用於銦氧化物層的蝕刻劑組合物、製作用於液晶顯示裝置的陣列基板的方法、用於液晶顯示裝置的陣列基板和導線 | |
KR102310096B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
KR102310094B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
KR101621534B1 (ko) | 금속 배선 형성을 위한 식각액 조성물 | |
KR101805186B1 (ko) | 구리 배선의 형성을 위한 식각액 조성물 | |
KR20140065962A (ko) | 액정 표시장치용 어레이 기판 제조방법 | |
KR20090049365A (ko) | 금속 배선 형성을 위한 식각액 조성물 및 이를 이용한식각방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130829 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130927 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140924 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140925 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150317 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150605 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150707 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150729 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5788400 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |