JP2013508983A5 - - Google Patents
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- JP2013508983A5 JP2013508983A5 JP2012535387A JP2012535387A JP2013508983A5 JP 2013508983 A5 JP2013508983 A5 JP 2013508983A5 JP 2012535387 A JP2012535387 A JP 2012535387A JP 2012535387 A JP2012535387 A JP 2012535387A JP 2013508983 A5 JP2013508983 A5 JP 2013508983A5
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- 239000000758 substrate Substances 0.000 claims 34
- 229910052751 metal Inorganic materials 0.000 claims 30
- 239000002184 metal Substances 0.000 claims 30
- 239000004065 semiconductor Substances 0.000 claims 26
- 239000000463 material Substances 0.000 claims 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 239000007769 metal material Substances 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- 239000011651 chromium Substances 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 239000004332 silver Substances 0.000 claims 3
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 229940052609 Legend Drugs 0.000 claims 2
- 230000001154 acute Effects 0.000 claims 2
- 229920001721 Polyimide Polymers 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000007858 starting material Substances 0.000 claims 1
Claims (34)
一対の上部および下部プレートと、
前記上部プレートと前記下部プレートとの間に挿置され、基板上面および基板下面を有するとともに、比較的低い熱伝導率を有する電気絶縁材料で形成された基板と、
前記基板上面と前記基板下面との少なくとも一方に少なくとも1列に配置されるとともに交互の異種材料で形成される一連の熱電脚部であって、前記列の軸に対し非平行に配向される脚軸を各々画定する一連の熱電脚部と、
前記熱電脚部の一端が前記上部プレートと熱的に接触し、前記熱電脚部の反対端が前記下部プレートと熱的に接触するように、前記基板の両側に取り付けられるとともに前記列において前記熱電脚部の両端に整列される少なくとも一対の熱伝導性ストリップと
を備え、前記熱伝導性ストリップは前記熱電脚部の間に熱ギャップを画定し、前記上部および下部プレートは前記熱電脚部を通して長手方向に熱の流れを生じさせる、熱電発電装置。 A thermoelectric generator,
A pair of upper and lower plates;
A substrate inserted between the upper plate and the lower plate, having a substrate upper surface and a substrate lower surface, and a substrate formed of an electrically insulating material having a relatively low thermal conductivity;
A series of thermoelectric legs arranged in at least one row on at least one of the upper surface and the lower surface of the substrate and formed of alternating dissimilar materials, the legs being oriented non-parallel to the axis of the row A series of thermoelectric legs each defining an axis;
One end of the thermoelectric leg is in thermal contact with the upper plate and the other end of the thermoelectric leg is in thermal contact with the lower plate and is attached to both sides of the substrate and in the row. At least a pair of thermally conductive strips aligned at opposite ends of the legs, the thermally conductive strips defining a thermal gap between the thermoelectric legs, and the upper and lower plates extending longitudinally through the thermoelectric legs. A thermoelectric generator that generates heat flow in the direction.
前記列の1つにおける前記熱電脚部の端部は列間隔を画定するために前記列の隣接する1つにおける前記熱電脚部の端部から離間されており、
前記熱伝導性ストリップの各々は前記列間隔に整列されている、
請求項1に記載の熱電発電装置。 The substrate includes a plurality of the rows;
An end of the thermoelectric leg in one of the rows is spaced from an end of the thermoelectric leg in an adjacent one of the rows to define a row spacing;
Each of the thermally conductive strips is aligned with the row spacing;
The thermoelectric generator according to claim 1.
前記n型およびp型脚部の少なくとも一方はBi2Te3型半導体材料からなる出発材料から形成されている、
請求項1に記載の熱電発電装置。 The dissimilar material comprises a dissimilar semiconductor material such that the thermoelectric legs comprise n-type and p-type legs;
At least one of the n-type and p-type legs is formed of a starting material made of a Bi 2 Te 3 type semiconductor material;
The thermoelectric generator according to claim 1.
前記異種材料は前記熱電脚部がn型およびp型脚部を備えるように異種半導体材料を含み、
前記n型およびp型脚部の各々は対向する脚部端を有しており、前記p型脚部の両端において前記p型脚部が前記n型脚部の隣接する一つに前記金属ブリッジによって電気的に相互接続されるように前記脚部端が前記金属ブリッジに重なっている、
請求項1に記載の熱電発電装置。 A plurality of metal bridges formed on the substrate;
The dissimilar material comprises a dissimilar semiconductor material such that the thermoelectric legs comprise n-type and p-type legs;
Each of the n-type and p-type legs has opposing leg ends, and at both ends of the p-type legs, the p-type legs are adjacent to the n-type legs and the metal bridge The leg ends overlap the metal bridge so that they are electrically interconnected by
The thermoelectric generator according to claim 1.
前記金属脚部の金属材料はタングステン、クロム、金、ニッケル、アルミニウム、銀、銅、チタン、モリブデン、タンタル、およびドープされた炭化ケイ素のうちの少なくとも1つを備える、
請求項1に記載の熱電発電装置。 The dissimilar material includes a semiconductor material and a metal material such that the thermoelectric leg includes one of an n-type and a p-type leg and a metal leg.
The metal material of the metal leg comprises at least one of tungsten, chromium, gold, nickel, aluminum, silver, copper, titanium, molybdenum, tantalum, and doped silicon carbide;
The thermoelectric generator according to claim 1.
前記半導体材料からなる半導体脚部は該半導体脚部のほぼ全長に沿って前記金属脚部から電気的に絶縁されており、
前記半導体脚部の脚部端は前記金属脚部の脚部端に重なり合って電気的に接続されている、
請求項12に記載の熱電発電装置。 The metal legs are formed on the substrate;
A semiconductor leg made of the semiconductor material is electrically insulated from the metal leg along substantially the entire length of the semiconductor leg;
The leg end of the semiconductor leg overlaps and is electrically connected to the leg end of the metal leg,
The thermoelectric generator according to claim 12.
前記熱電脚部がn型およびp型脚部の一方と金属脚部とを備えるような半導体材料および金属材料と、
前記熱電脚部がn型およびp型脚部を備えるような半導体材料と、
のうちの少なくとも一方を備え、
前記n型およびp型脚部の少なくとも一方は、約15μm〜約100μmの範囲の脚部厚さと、約10μm〜約500μmの範囲の幅と、約50μm〜約500μmの範囲の長さとを有し、
前記金属脚部は、約0.5μm〜約5μmの範囲の脚部厚さと、約10μm〜約500μmの範囲の幅と、約50μm〜約500μmの範囲の長さとを有する、
請求項1に記載の熱電発電装置。 The dissimilar material is
A semiconductor material and a metal material such that the thermoelectric leg comprises one of an n-type and a p-type leg and a metal leg;
A semiconductor material wherein the thermoelectric legs comprise n-type and p-type legs;
Comprising at least one of
At least one of the n-type and p-type legs has a leg thickness in the range of about 15 μm to about 100 μm, a width in the range of about 10 μm to about 500 μm, and a length in the range of about 50 μm to about 500 μm. ,
The metal legs have a leg thickness in the range of about 0.5 μm to about 5 μm, a width in the range of about 10 μm to about 500 μm, and a length in the range of about 50 μm to about 500 μm.
The thermoelectric generator according to claim 1.
前記n型およびp型脚部の脚部厚さは前記基板厚さの約1〜約10倍であり、
前記基板厚さは前記金属脚部の脚部厚さの約1〜約50倍である、
請求項17に記載の熱電発電装置。 The substrate has a substrate thickness;
The leg thickness of the n-type and p-type legs is about 1 to about 10 times the substrate thickness;
The substrate thickness is about 1 to about 50 times the thickness of the metal leg.
The thermoelectric generator according to claim 17.
前記基板厚さの前記金属脚部の脚部厚さに対する厚さ比は約10〜約15の範囲内にある、
請求項19に記載の熱電発電装置。 The thickness ratio of the n-type and p-type leg thickness to the substrate thickness is in the range of about 2 to about 4,
The thickness ratio of the substrate thickness to the leg thickness of the metal legs is in the range of about 10 to about 15.
The thermoelectric generator according to claim 19.
約0.2V〜約2.0Vの開放熱電電圧出力、
約0.1V〜約1.0Vの整合負荷における熱電電圧出力、
約0.1mA〜約5.0mAの電流、
約0.1mW〜約0.5mWの電力出力、
約0.1mW/cm2〜約0.5mW/cm2の電力出力密度、および
約0.02%〜約0.2%のエネルギー変換効率、
の特性パラメータのうちの少なくとも1つを有する請求項1に記載の熱電発電装置。 With a temperature gradient of about 5K between the upper and lower plates,
An open thermoelectric voltage output of about 0.2V to about 2.0V,
Thermoelectric voltage output at a matched load of about 0.1V to about 1.0V,
A current of about 0.1 mA to about 5.0 mA;
Power output of about 0.1 mW to about 0.5 mW,
About 0.1 mW / cm 2 to about power output density of 0.5 mW / cm 2, and from about 0.02% to about 0.2% of energy conversion efficiency,
The thermoelectric generator according to claim 1, wherein the thermoelectric generator has at least one of the following characteristic parameters.
基板を設けるステップと、
前記基板上に金属ブリッジを形成するステップと、
前記基板上に交互にn型およびp型脚部を形成して熱電脚部の列を形成することにより、前記n型およびp型脚部の端部を前記金属ブリッジに重ね合わせて前記n型およびp型脚部を直列に電気的に相互接続させるステップであって、前記熱電脚部の各々が前記列の軸に対して非平行に配向される脚軸を画定する当該ステップと、
前記基板、前記金属ブリッジ、および前記n型およびp型脚部を電気絶縁層で覆うステップと、
を備える方法。 A method of forming a thermoelectric generator,
Providing a substrate;
Forming a metal bridge on the substrate;
By alternately forming n-type and p-type legs on the substrate to form a row of thermoelectric legs, the ends of the n-type and p-type legs are overlapped with the metal bridge to form the n-type Electrically connecting the p-type legs in series with each other, wherein each of the thermoelectric legs defines a leg axis oriented non-parallel to the axis of the row;
Covering the substrate, the metal bridge, and the n-type and p-type legs with an electrically insulating layer;
A method comprising:
前記熱電脚部の各々が脚軸を画定し、
前記熱電脚部の脚軸が前記列の軸に対して実質的に垂直に配向されている、
請求項24に記載の方法。 The alternating n-type and p-type legs define a row of the thermoelectric legs;
Each of the thermoelectric legs defines a leg axis;
A leg axis of the thermoelectric leg is oriented substantially perpendicular to the axis of the row;
25. A method according to claim 24.
タングステンの層を前記基板上に形成すること、
アルミニウムの層を前記タングステンの上に形成すること、
タングステンの層を前記アルミニウムの上に形成すること、
を含む、請求項24に記載の方法。 Forming the metal bridge on the substrate comprises:
Forming a layer of tungsten on the substrate;
Forming a layer of aluminum on the tungsten;
Forming a layer of tungsten on the aluminum;
25. The method of claim 24, comprising:
基板を設けるステップと、
前記基板上で互いに離間させて金属脚部の列を形成するステップと、
前記金属脚部を電気絶縁層で覆うステップと、
前記金属脚部の対向する脚部端において前記電気絶縁層に開口を形成するステップと、
前記基板上に前記金属脚部に対して交互に半導体脚部を形成して、前記列のジグザグパターンを形成するように前記半導体脚部の脚部端を前記金属脚部の脚部端に重ね合わせて電気的に接続するステップと、
前記基板、前記金属ブリッジ、および前記半導体脚部を電気絶縁層で覆うステップと、
を備える方法。 A method for forming a foil assembly of a thermoelectric generator, comprising:
Providing a substrate;
Forming rows of metal legs spaced apart from each other on the substrate;
Covering the metal legs with an electrically insulating layer;
Forming an opening in the electrically insulating layer at opposite leg ends of the metal legs;
Semiconductor legs are alternately formed on the substrate with respect to the metal legs, and the legs of the semiconductor legs are overlapped with the legs of the metal legs so as to form a zigzag pattern of the row. And electrically connecting them together,
Covering the substrate, the metal bridge, and the semiconductor legs with an electrically insulating layer;
A method comprising:
隣接する複数対の前記半導体脚部および前記金属脚部の脚軸が鋭角を画定するような向きに前記半導体脚部および前記金属脚部の少なくとも一方を形成するステップをさらに備える、請求項30に記載の方法。 Each of the semiconductor leg and the metal leg defines a leg axis, the method comprising:
31. The method of claim 30, further comprising forming at least one of the semiconductor legs and the metal legs in an orientation such that leg axes of adjacent pairs of the semiconductor legs and the metal legs define an acute angle. The method described.
前記半導体脚部はBi2Te3型半導体材料を備える材料から形成されている、
請求項30に記載の方法。 The metal legs are formed of at least one of tungsten, chromium, gold, nickel, aluminum, silver, copper, titanium, molybdenum, tantalum, and doped silicon carbide;
The semiconductor leg is formed of a material comprising a Bi 2 Te 3 type semiconductor material,
The method of claim 30.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/605,370 | 2009-10-25 | ||
US12/605,370 US20110094556A1 (en) | 2009-10-25 | 2009-10-25 | Planar thermoelectric generator |
PCT/US2010/053612 WO2011050203A1 (en) | 2009-10-25 | 2010-10-21 | Planar thermoelectric generator |
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JP2013508983A JP2013508983A (en) | 2013-03-07 |
JP2013508983A5 true JP2013508983A5 (en) | 2013-12-05 |
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JP2012535387A Pending JP2013508983A (en) | 2009-10-25 | 2010-10-21 | Planar thermoelectric generator |
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US (1) | US20110094556A1 (en) |
EP (1) | EP2491602A4 (en) |
JP (1) | JP2013508983A (en) |
CN (1) | CN102612762A (en) |
WO (1) | WO2011050203A1 (en) |
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2010
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- 2010-10-21 CN CN2010800507764A patent/CN102612762A/en active Pending
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