JP2013507012A - 有機デュアルゲートメモリおよびその製造方法 - Google Patents
有機デュアルゲートメモリおよびその製造方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
- H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- Thin Film Transistor (AREA)
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- Non-Volatile Memory (AREA)
Abstract
Description
− 第1のゲート電極の形成、
− 第1のゲート誘電体の形成、
− 有機半導体材料と接触するソース・ドレイン電極であって、電極間表面を規定するソース・ドレイン電極の形成、
− 第2のゲート誘電体の形成、
− 第2のゲート電極の形成、
を連続的に含み、
有機半導体材料とゲート電極のうちの一方との間での電荷捕捉領域の形成を含み、捕捉領域が、ゲート電極のうちの一方または有機半導体材料と電気的に接触するとともに、少なくとも電極間表面と対向していることを特徴とする。
− 第1のゲート電極4の形成、
− 第1のゲート誘電体6の形成
− 有機半導体材料2と接触するソース・ドレイン電極5であって、電極間表面を規定するソース・ドレイン電極5の形成、
− 第2のゲート誘電体7の形成、
− 第2のゲート電極8の形成、
を含む。
Claims (11)
- − 第1のゲート電極(4)と、
− 第1のゲート誘電体(6)と、
− 有機半導体材料(2)と、
− 第2のゲート電極(8)と、
− 第2のゲート誘電体(7)と、
− 半導体材料(2)の電極間表面(2a)を画定するソース・ドレイン電極(5)と、
− 有機半導体材料(2)とゲート電極(4,8)のうちの一方との間に配置される電荷捕捉材料(9)と、
を備えるダブルゲートトランジスタであって、
捕捉材料(9)は、ゲート電極(6,7)のうちの一方または有機半導体材料(2)と電気的に接触するとともに、電極間表面(2a)と部分的に対向していることを特徴とする、ダブルゲートトランジスタ。 - 電荷捕捉材料(9)がゲート誘電体(6,7)の一部を備えることを特徴とする、請求項1に記載のデバイス。
- 電荷捕捉材料(9)が有機半導体材料(2)の一部を備えることを特徴とする、請求項1または請求項2に記載のデバイス。
- 電荷捕捉材料(9)がイオン伝導性高分子材料から形成されることを特徴とする、請求項1に記載のデバイス。
- 電荷捕捉材料(9)は、スルホン酸基を終端とするペルフルオロ化されたダングリングチェーンがグラフト重合されたポリ(テトラフルオロエチレン)タイプの骨格を備えることを特徴とする、請求項4に記載のデバイス。
- 電荷捕捉材料(9)から形成される基本捕捉領域(9a,9b)を備えることを特徴とする、請求項1から5のいずれか一項に記載のデバイス。
- メモリデバイスを製造するための方法であって、
− 第1のゲート電極(4)の形成、
− 第1のゲート誘電体(6)の形成、
− 有機半導体材料(2)と接触するソース・ドレイン電極(5)であって、電極間表面(2a)を規定するソース・ドレイン電極(5)の形成、
− 第2のゲート誘電体(7)の形成、
− 第2のゲート電極(8)の形成、
を連続的に含み、
有機半導体材料(2)とゲート電極(4,8)のうちの一方との間での電荷捕捉材料(9)の形成を含み、捕捉材料(9)は、ゲート電極(6,7)のうちの一方または有機半導体材料(2)と電気的に接触するとともに、電極間表面(2a)と部分的に対向していることを特徴とする、方法。 - 捕捉材料(9)が第1のゲート誘電体(6)の一部の分解によって形成されることを特徴とする、請求項7に記載の方法。
- 捕捉材料(9)が有機半導体材料(2)の一部の分解によって形成されることを特徴とする、請求項7に記載の方法。
- 捕捉材料(9)は、ソース・ドレイン電極(5)のパターニングが行なわれるときに形成されることを特徴とする、請求項8または請求項9に記載の方法。
- 捕捉材料(9)は、物理的処理、化学的処理、レーザ処理、または、プラズマ処理によって形成されることを特徴とする、請求項8から10のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0904749A FR2951028B1 (fr) | 2009-10-05 | 2009-10-05 | Memoire organique a double grille et procede de realisation |
FR0904749 | 2009-10-05 | ||
PCT/FR2010/000650 WO2011042619A2 (fr) | 2009-10-05 | 2010-09-30 | Mémoire organique à double grille et procédé de réalisation |
Publications (2)
Publication Number | Publication Date |
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JP2013507012A true JP2013507012A (ja) | 2013-02-28 |
JP5738868B2 JP5738868B2 (ja) | 2015-06-24 |
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JP2012532641A Expired - Fee Related JP5738868B2 (ja) | 2009-10-05 | 2010-09-30 | 有機デュアルゲートメモリおよびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8710494B2 (ja) |
EP (1) | EP2486607B1 (ja) |
JP (1) | JP5738868B2 (ja) |
KR (1) | KR20120101644A (ja) |
FR (1) | FR2951028B1 (ja) |
WO (1) | WO2011042619A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014512108A (ja) * | 2011-04-21 | 2014-05-19 | シーピーアイ イノベーション サービシズ リミテッド | トランジスタ |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI544263B (zh) * | 2011-11-02 | 2016-08-01 | 元太科技工業股份有限公司 | 陣列基板及其製造方法 |
FR2995720B1 (fr) * | 2012-09-18 | 2014-10-24 | Commissariat Energie Atomique | Procede de realisation d'un dispositif a effet de champ a double grille a grilles independantes |
CN104795496A (zh) * | 2015-04-08 | 2015-07-22 | 深圳市华星光电技术有限公司 | 双栅极器件以及双栅极器件的制造方法 |
CN107978603A (zh) * | 2016-10-20 | 2018-05-01 | 苏州大学 | 一种薄膜晶体管存储器及其多值存储方法 |
WO2020176223A2 (en) * | 2019-02-08 | 2020-09-03 | Georgia Tech Research Corporation | Systems and methods for high sensitivity stable sensors |
US11257962B2 (en) * | 2019-05-02 | 2022-02-22 | Micron Technology, Inc. | Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods |
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-
2009
- 2009-10-05 FR FR0904749A patent/FR2951028B1/fr not_active Expired - Fee Related
-
2010
- 2010-09-30 JP JP2012532641A patent/JP5738868B2/ja not_active Expired - Fee Related
- 2010-09-30 KR KR1020127011535A patent/KR20120101644A/ko not_active Application Discontinuation
- 2010-09-30 EP EP10776760.0A patent/EP2486607B1/fr not_active Not-in-force
- 2010-09-30 WO PCT/FR2010/000650 patent/WO2011042619A2/fr active Application Filing
- 2010-09-30 US US13/500,273 patent/US8710494B2/en not_active Expired - Fee Related
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JP2014512108A (ja) * | 2011-04-21 | 2014-05-19 | シーピーアイ イノベーション サービシズ リミテッド | トランジスタ |
US10090482B2 (en) | 2011-04-21 | 2018-10-02 | Cpi Innovation Services Limited | Transistors |
Also Published As
Publication number | Publication date |
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KR20120101644A (ko) | 2012-09-14 |
FR2951028B1 (fr) | 2012-08-03 |
FR2951028A1 (fr) | 2011-04-08 |
US20120199821A1 (en) | 2012-08-09 |
WO2011042619A3 (fr) | 2011-06-03 |
EP2486607B1 (fr) | 2017-03-08 |
JP5738868B2 (ja) | 2015-06-24 |
EP2486607A2 (fr) | 2012-08-15 |
US8710494B2 (en) | 2014-04-29 |
WO2011042619A2 (fr) | 2011-04-14 |
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