JP2013219348A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013219348A JP2013219348A JP2013050858A JP2013050858A JP2013219348A JP 2013219348 A JP2013219348 A JP 2013219348A JP 2013050858 A JP2013050858 A JP 2013050858A JP 2013050858 A JP2013050858 A JP 2013050858A JP 2013219348 A JP2013219348 A JP 2013219348A
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- layer
- wiring
- insulating layer
- oxide semiconductor
- electrode
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- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
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- 229910052783 alkali metal Inorganic materials 0.000 description 1
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- 239000011230 binding agent Substances 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
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- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
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- 239000012788 optical film Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
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- 238000001782 photodegradation Methods 0.000 description 1
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- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】ゲート配線を、銅を含む導電層で形成し、ソース電極及びドレイン電極と同じ導電層の一部で形成される信号配線を、ゲート配線と同じ導電層の一部で形成される配線と電気的に直列または並列に接続することで、信号配線の幅や厚さを増加させること無く、実質的に信号配線の配線抵抗を下げる。
【選択図】図1
Description
本実施の形態では、配線抵抗を低減した半導体装置の構成及び作製方法の一例について、図1乃至図15を用いて説明する。なお、本実施の形態では、半導体装置の一形態である表示装置への適用例を示す。
(a―A)2+(b―B)2+(c―C)2≦r2
を満たすことを言い、rは、例えば、0.05とすればよい。他の酸化物でも同様である。
本実施の形態では、上記実施の形態で示した表示装置の一例について、図16及び図17を用いて説明する。また、上記実施の形態で一例を示したトランジスタを用いて、トランジスタを含む駆動回路の一部または全体を画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、上記実施の形態に示した配線抵抗を低減した半導体装置の一例として、対象物の情報を読み取るイメージセンサ機能を有する半導体装置について説明する。
上記実施の形態で説明した表示装置は、3D映像を表示する半導体装置に適用することが可能である。本実施の形態では、左目用の映像と右目用の映像を高速で切り換える表示装置を用いて、表示装置の映像と同期する専用の眼鏡を用いて動画または静止画である3D映像を視認する例を、図19を用いて示す。
本実施の形態では、上記実施の形態で説明した表示装置を具備する電子機器の例について説明する。
101 基板
102 画素領域
103 端子部
104 端子部
105 端子
106 端子
107 端子
110 画素
111 トランジスタ
112 液晶素子
113 容量素子
114 電極
115 ノード
121 トランジスタ
122 EL素子
200 基板
201 絶縁層
202 ゲート電極
203 配線
204 絶縁層
205 酸化物半導体層
207 絶縁層
208 絶縁層
209 コンタクトホール
210 画素
211 画素電極
212 配線
215 酸化物半導体層
216 配線
217 導電層
218 コンタクトホール
219 コンタクトホール
221 電極
222 電極
225 絶縁層
226 配線
227 コンタクトホール
228 コンタクトホール
229 コンタクトホール
231 酸素
235 電極
236 配線
246 配線
251 EL層
252 電極
253 EL素子
254 隔壁層
262 ゲート電極
271 開口部
310 画素
601 基板
602 フォトダイオード
608 接着層
613 基板
622 光
630 配線
631 導電層
632 導電層
633 絶縁層
634 絶縁層
635 導電層
636 導電層
637 絶縁層
640 トランジスタ
642 電極層
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
671 フォトセンサ出力信号線
672 フォトセンサ基準信号線
2701 眼鏡本体
2703 ケーブル
2704 筐体
2705 表示部
2706 筐体
2707 表示部
2711 表示装置
2712 軸部
2713 タイミング発生器
2716 表示制御回路
2717 表示部
2718 ソース線側駆動回路
2719 ゲート線側駆動回路
2721 電源端子
2722 外部操作手段
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3056 バッテリー
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4014 配線
4015 電極
4016 電極
4017 導電層
4018 FPC
4019 異方性導電層
4020 絶縁層
4021 平坦化層
4022 絶縁層
4023 絶縁層
4024 絶縁層
4030 電極層
4031 電極層
4032 絶縁層
4033 絶縁層
4035 スペーサ
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
9601 筐体
9603 表示部
9605 スタンド
206a ソース電極
206b ドレイン電極
266a ソース電極
266b ドレイン電極
2702a 左目用パネル
2702b 右目用パネル
2730a 同期信号
2730b 同期信号
2731a 同期信号
2731b 同期信号
4018b FPC
606a 半導体層
606b 半導体層
606c 半導体層
641a 電極
641b 電極
Claims (6)
- 銅を含む導電層で形成された第1配線と、
酸化物半導体層と接する導電層と同じ導電層の一部で形成された第2配線と、
絶縁層を有し、
前記絶縁層は前記第1配線上に形成され、
前記第2配線は前記絶縁層上に形成され、
前記第1配線と前記第2配線は、前記絶縁層に形成されたコンタクトホールを介して
電気的に並列に接続されていることを特徴とする半導体装置。 - 請求項1において、
前記第1配線と、前記第2配線が重畳することを特徴とする半導体装置。 - 銅を含む導電層で形成された複数の第1配線と、
酸化物半導体層と接する導電層と同じ導電層の一部で形成された複数の第2配線と、
絶縁層を有し、
前記絶縁層は前記第1配線上に形成され、
前記第2配線は前記絶縁層上に形成され、
前記第1配線と前記第2配線は、前記絶縁層に形成されたコンタクトホールを介して
電気的に直列に接続されていることを特徴とする半導体装置。 - 請求項1乃至請求項3において、
前記第1配線は、銅を含む層と、銅よりも融点が高い金属元素を含む層の積層であることを特徴とする半導体装置。 - 請求項1乃至請求項4において、
前記第1配線は、銅を含む層と銅よりも融点が高い金属元素の窒化物を含む層の積層であることを特徴とする半導体装置。 - 請求項1乃至請求項5において、
前記絶縁層は、窒化シリコンまたは酸化アルミニウムを含むことを特徴とする半導体装置。
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JP2018157099A Withdrawn JP2019012833A (ja) | 2012-03-14 | 2018-08-24 | 半導体装置 |
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JP2019123913A Withdrawn JP2019176182A (ja) | 2012-03-14 | 2019-07-02 | 半導体装置 |
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US (1) | US20130240873A1 (ja) |
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KR102330543B1 (ko) * | 2012-04-13 | 2021-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2014045175A (ja) | 2012-08-02 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8927985B2 (en) | 2012-09-20 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293480B2 (en) | 2013-07-10 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
KR102213114B1 (ko) * | 2014-09-29 | 2021-02-04 | 엘지디스플레이 주식회사 | 투명 디스플레이 패널 및 이의 제조 방법 |
US10916430B2 (en) | 2016-07-25 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102628795B1 (ko) * | 2018-07-30 | 2024-01-25 | 삼성디스플레이 주식회사 | 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
TWI728826B (zh) * | 2020-06-03 | 2021-05-21 | 友達光電股份有限公司 | 自帶濾波功能的可調式平面天線 |
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JP2019012833A (ja) | 2019-01-24 |
KR20200031597A (ko) | 2020-03-24 |
JP2019176182A (ja) | 2019-10-10 |
KR20130105392A (ko) | 2013-09-25 |
JP2018050064A (ja) | 2018-03-29 |
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