JP2013219151A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013219151A JP2013219151A JP2012087764A JP2012087764A JP2013219151A JP 2013219151 A JP2013219151 A JP 2013219151A JP 2012087764 A JP2012087764 A JP 2012087764A JP 2012087764 A JP2012087764 A JP 2012087764A JP 2013219151 A JP2013219151 A JP 2013219151A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 123
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 123
- 150000004767 nitrides Chemical class 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 37
- 239000007789 gas Substances 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000126 substance Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
【解決手段】窒化物半導体層上に形成されたゲート電極20並びに前記ゲート電極を挟むソース電極22およびドレイン電極24と、前記ゲート電極および前記窒化物半導体層を覆ってなる窒素に対するシリコンの組成比が0.75より大きく、単体では圧縮応力を有する第1窒化シリコン膜32と、前記第1窒化シリコン膜上に形成された窒素に対するシリコンの組成比が0.75より大きく、単体では引張応力を有する第2窒化シリコン膜34と、を有し、前記第1窒化シリコン膜および前記第2窒化シリコン膜の積層構造全体では引張応力を有してなることを特徴とする半導体装置。
【選択図】図5
Description
第1窒化シリコン膜32の成膜条件および好ましい成膜条件の範囲は以下の通りである。
「成膜条件」
成膜方法:プラズマCVD法
ガス:SiH4、N2、He
ガス流量:SiH4:50sccm、N2:300sccm、He:800sccm
圧力:0.5Torr
RF(Radio Frequency)電力:250W
温度:300℃
膜厚:50nm
ガス流量:SiH4:3〜60sccm、N2:100〜500sccm、He:500〜1000sccm
圧力:0.2〜2.0Torr
RF(Radio Frequency)電力:30〜300W
温度:200〜300℃
膜厚:10〜100nm
第2窒化シリコン膜34の成膜条件および好ましい成膜条件の範囲を以下の通りである。
「成膜条件」
成膜方法:プラズマCVD法
ガス:SiH4、NH3、N2、He
ガス流量:SiH4:5sccm、NH3:1sccm、N2:600sccm、He:500sccm
圧力:0.9Torr
RF(Radio Frequency)電力:50W
温度:300℃
膜厚:350nm
ガス流量:SiH4:3〜60sccm、NH3:0.5〜5sccm、N2:100〜2000sccm、He:0〜600sccm
圧力:0.2〜1.8Torr
RF(Radio Frequency)電力:30〜300W
温度:200〜300℃
膜厚:200〜600nm
11 窒化物半導体層
20 ゲート電極
22 ソース電極
24 ドレイン電極
29 シールド電極
30 絶縁膜
32 第1窒化シリコン膜
34 第2窒化シリコン膜
Claims (5)
- 窒化物半導体層上に形成されたゲート電極並びに前記ゲート電極を挟むソース電極およびドレイン電極と、
前記ゲート電極および前記窒化物半導体層を覆ってなる窒素に対するシリコンの組成比が0.75より大きく、単体では圧縮応力を有する第1窒化シリコン膜と、
前記第1窒化シリコン膜上に形成された窒素に対するシリコンの組成比が0.75より大きく、単体では引張応力を有する第2窒化シリコン膜と、を有し、
前記第1窒化シリコン膜および前記第2窒化シリコン膜の積層構造全体では引張応力を有してなることを特徴とする半導体装置。 - 前記ゲート電極は、ニッケルを含む部分を備え、前記ニッケルを含む部分が前記第1窒化シリコン膜によって覆われてなることを特徴とする請求項1記載の半導体装置。
- 前記第2窒化シリコン膜上に形成された金属層を有することを特徴とする請求項2記載の半導体装置
- 前記第1窒化シリコン膜および前記第2窒化シリコン膜の窒素に対するシリコンの組成比は、0.8以上であることを特徴とする請求項1記載の半導体装置。
- 前記第1窒化シリコン膜および前記第2窒化シリコン膜はプラズマ成長によって形成されたものであり、前記第1窒化シリコン膜の成長ガスの総流量に対するHeの流量は、前記第2窒化シリコン膜の成長ガスの総流量に対するHeの流量に比べて大きいことを特徴とする請求項1記載の半導体装置。
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JP2012087764A JP6004319B2 (ja) | 2012-04-06 | 2012-04-06 | 半導体装置および半導体装置の製造方法 |
US13/857,510 US8921950B2 (en) | 2012-04-06 | 2013-04-05 | Semiconductor device |
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JP2013219151A true JP2013219151A (ja) | 2013-10-24 |
JP2013219151A5 JP2013219151A5 (ja) | 2015-05-21 |
JP6004319B2 JP6004319B2 (ja) | 2016-10-05 |
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Cited By (3)
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US9343536B2 (en) | 2014-08-05 | 2016-05-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2019003991A (ja) * | 2017-06-13 | 2019-01-10 | 住友電工デバイス・イノベーション株式会社 | 窒化物半導体トランジスタの製造方法及び窒化物半導体トランジスタ |
JP6470480B1 (ja) * | 2018-04-13 | 2019-02-13 | 三菱電機株式会社 | 電界効果型トランジスタ |
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JP6197344B2 (ja) * | 2013-04-18 | 2017-09-20 | 住友電気工業株式会社 | 半導体装置 |
US9761438B1 (en) * | 2014-05-08 | 2017-09-12 | Hrl Laboratories, Llc | Method for manufacturing a semiconductor structure having a passivated III-nitride layer |
CN105118785A (zh) * | 2015-09-02 | 2015-12-02 | 深圳大学 | 一种氮化镓异质结场效应晶体管及其形成方法 |
CN105304722B (zh) * | 2015-09-24 | 2018-09-04 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、显示基板、显示装置 |
JP6536318B2 (ja) * | 2015-09-24 | 2019-07-03 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
CN105470310A (zh) * | 2016-01-21 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
DE102017127182A1 (de) * | 2017-11-17 | 2019-05-23 | Forschungsverbund Berlin E.V. | Gate-Struktur und Verfahren zu deren Herstellung |
JP7139774B2 (ja) * | 2018-08-16 | 2022-09-21 | 富士通株式会社 | 化合物半導体装置、化合物半導体装置の製造方法及び増幅器 |
US10707322B2 (en) * | 2018-10-22 | 2020-07-07 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for fabricating the same |
JP7163806B2 (ja) * | 2019-02-05 | 2022-11-01 | 富士通株式会社 | 化合物半導体装置、化合物半導体装置の製造方法及び増幅器 |
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WO2019198226A1 (ja) * | 2018-04-13 | 2019-10-17 | 三菱電機株式会社 | 電界効果型トランジスタ |
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