JP2013212936A - Reformer and fuel cell power generation equipment - Google Patents

Reformer and fuel cell power generation equipment Download PDF

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JP2013212936A
JP2013212936A JP2012082751A JP2012082751A JP2013212936A JP 2013212936 A JP2013212936 A JP 2013212936A JP 2012082751 A JP2012082751 A JP 2012082751A JP 2012082751 A JP2012082751 A JP 2012082751A JP 2013212936 A JP2013212936 A JP 2013212936A
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insulating material
preheater
heat insulating
reformer
evaporator
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JP5723819B2 (en
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Masatoshi Tanaka
正俊 田中
Koichi Kawamoto
浩一 川本
Hiromi Sasaki
広美 佐々木
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Toshiba Energy Systems and Solutions Corp
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Toshiba Fuel Cell Power Systems Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Abstract

PROBLEM TO BE SOLVED: To enable reforming efficiency to be improved.SOLUTION: In an embodiment, a reformer is equipped with: a reforming unit 1 of generating a hydrogen-rich gas by introducing a mixed gas of hydrocarbon-based fuel and steam; an evaporator 2 of generating steam to be used for generating the mixed gas; a preheater 3 of heating the mixed gas by exchanging heat with the hydrogen-rich gas generated from the reformer 1; and a low temperature reaction unit 4 having a function to reduce carbon monoxide in the hydrogen-rich gas derived at least from the preheater 3 by a chemical reaction. The evaporator 2, the reformer 1 and the preheater 3 are arranged in this order, and each is provided with a heat-insulating material therearound. A width of the reformer 1, in a second direction perpendicular to a first direction being the arrangement direction, is smaller than at least one of the width of the evaporator 2 and the width of the preheater 3 in the second direction.

Description

本発明の実施形態は、改質器および燃料電池発電装置に関する。   Embodiments described herein relate generally to a reformer and a fuel cell power generator.

燃料電池発電装置は、改質器で生成した水素を、燃料電池本体において直接電気エネルギーに変換するシステムである。このシステムは化学反応による発電であるために発電効率が高く、汚染物質の排出および騒音が少なく、環境性に優れた発電装置として評価されている。   A fuel cell power generation device is a system that converts hydrogen generated by a reformer directly into electrical energy in a fuel cell body. Since this system is a power generation based on a chemical reaction, the power generation efficiency is high, the emission of pollutants and noise is small, and it is evaluated as a power generation apparatus excellent in environmental performance.

改質器内には改質触媒層を配した改質部が備えられており、炭化水素系などの改質燃料と蒸発器で発生させた水蒸気との改質反応により水素を含む改質ガスを生成する。改質反応は高温での吸熱反応であるため、起動時には改質触媒層を運転温度まで昇温させる必要があり、また、運転中は改質触媒層を加熱し続ける必要がある。そのため、一般に改質器はバーナとバーナ燃焼空間を備えており、可燃ガスを燃焼させることで起動時および運転時に改質触媒に熱を供給する。   The reformer is provided with a reforming section provided with a reforming catalyst layer, and a reformed gas containing hydrogen by a reforming reaction between a hydrocarbon-based reformed fuel and steam generated by an evaporator. Is generated. Since the reforming reaction is an endothermic reaction at a high temperature, it is necessary to raise the temperature of the reforming catalyst layer to the operating temperature during startup, and it is necessary to continue heating the reforming catalyst layer during operation. Therefore, the reformer generally includes a burner and a burner combustion space, and supplies heat to the reforming catalyst at the time of start-up and operation by burning combustible gas.

改質部から導出された改質ガスには高濃度の一酸化炭素を含むため、シフト反応器により一酸化炭素濃度を低下させる。シフト反応器の下流では、ＰＲＯＸ部にてＰＲＯＸ空気と選択酸化反応させる、メタネーション反応器で一酸化炭素と水素からメタンを発生させる、などの方法で、更に一酸化炭素濃度を低減させることもある。また、蒸発器で発生させる水蒸気量を増加させる目的で、蒸発器への給水を予熱する給水予熱器を備えることもある。   Since the reformed gas derived from the reforming section contains a high concentration of carbon monoxide, the carbon monoxide concentration is lowered by the shift reactor. Downstream of the shift reactor, the carbon monoxide concentration can be further reduced by a method such as a selective oxidation reaction with PROX air in the PROX section, or methane generation from carbon monoxide and hydrogen in the methanation reactor. is there. Moreover, in order to increase the amount of water vapor generated in the evaporator, a water supply preheater that preheats water supplied to the evaporator may be provided.

特許第４０６３４３０号明細書Japanese Patent No. 4063430

改質器は燃料から一酸化炭素濃度が低い水素リッチガスを製造することを目的としており、そのエネルギー効率である改質効率は生成した水素リッチガスの発熱量とバーナ熱量との差と、燃料の発熱量との比で表される。従って、改質効率の高い改質器を実現するためには、より少ない熱量で、より多くの水素リッチガスを発生させるように構成することが望まれる。   The reformer aims to produce hydrogen-rich gas with low carbon monoxide concentration from fuel. The reforming efficiency, which is the energy efficiency, is the difference between the calorific value of the generated hydrogen-rich gas and the burner calorific value, and the heat generation of the fuel. Expressed as a ratio to the quantity. Therefore, in order to realize a reformer with high reforming efficiency, it is desired to configure so as to generate more hydrogen-rich gas with less heat.

しかしながら、既存の改質器の構成では無駄な放熱が多く、改質効率を向上させることが難しい。   However, the existing reformer configuration has a large amount of wasted heat and it is difficult to improve the reforming efficiency.

発明が解決しようとする課題は、改質効率を向上させることが可能な改質器および燃料電池発電装置を提供することにある。   The problem to be solved by the invention is to provide a reformer and a fuel cell power generator capable of improving the reforming efficiency.

実施形態の改質器は、炭化水素系燃料と水蒸気との混合ガスを導入して水素リッチガスを生成する改質部と、前記混合ガスの生成に使用される水蒸気を発生する蒸発器と、前記改質部から生成される水素リッチガスとの熱交換により前記混合ガスを加熱する予熱器と、少なくとも前記予熱器から導出される水素リッチガス中の一酸化炭素を化学反応により低減する機能を有する低温反応部と備えている。前記蒸発器、前記改質部、および前記予熱器は、この順序で配列しており、且つそれぞれの周囲に断熱材を備え、当該配列の方向である第１の方向と直交する第２の方向における前記改質部の幅が、前記第２の方向における前記蒸発器の幅もしくは前記予熱器の幅の少なくとも一方よりも小さい。   The reformer of the embodiment includes a reforming unit that generates a hydrogen-rich gas by introducing a mixed gas of a hydrocarbon fuel and steam, an evaporator that generates steam used to generate the mixed gas, A preheater that heats the mixed gas by heat exchange with a hydrogen-rich gas generated from the reforming section, and a low-temperature reaction that has a function of reducing at least carbon monoxide in the hydrogen-rich gas derived from the preheater by a chemical reaction With the department. The evaporator, the reforming unit, and the preheater are arranged in this order, and each is provided with a heat insulating material, and the second direction is orthogonal to the first direction that is the direction of the arrangement. The width of the reforming section is smaller than at least one of the width of the evaporator or the width of the preheater in the second direction.

第１の実施形態に係る改質器を横から見た場合の概略構成を示す側面図。The side view which shows schematic structure at the time of seeing the reformer which concerns on 1st Embodiment from the side. 同実施形態に係る改質器を上から見た場合の概略構成を示す上面図。The top view which shows schematic structure at the time of seeing the reformer which concerns on the same embodiment from the top. 第２の実施形態に係る改質器を上から見た場合の概略構成を示す上面図。The top view which shows schematic structure at the time of seeing the reformer which concerns on 2nd Embodiment from the top. 第３の実施形態に係る改質器を横から見た場合の概略構成を示す側面図。The side view which shows schematic structure at the time of seeing the reformer which concerns on 3rd Embodiment from the side. 同実施形態に係る改質器を上から見た場合の概略構成を示す上面図。The top view which shows schematic structure at the time of seeing the reformer which concerns on the same embodiment from the top. 第４の実施形態に係る改質器を横から見た場合の概略構成を示す側面図。The side view which shows schematic structure at the time of seeing the reformer which concerns on 4th Embodiment from the side. 第５の実施形態に係る改質器を上から見た場合の概略構成を示す上面図。The top view which shows schematic structure at the time of seeing the reformer which concerns on 5th Embodiment from the top.

以下、図面を参照して、実施の形態について説明する。   Hereinafter, embodiments will be described with reference to the drawings.

（第１の実施形態）
第１の実施形態に係る燃料電池発電装置に備えられる改質器について図１および図２を参照して説明する。 (First embodiment)
The reformer provided in the fuel cell power generator according to the first embodiment will be described with reference to FIGS. 1 and 2.

図１は、第１の実施形態に係る改質器を横から見た場合の概略構成を示す側面図である。図２は、同実施形態に係る改質器を上から見た場合の概略構成を示す上面図である。   FIG. 1 is a side view showing a schematic configuration when the reformer according to the first embodiment is viewed from the side. FIG. 2 is a top view showing a schematic configuration when the reformer according to the embodiment is viewed from above.

なお、当該改質器において蒸発器外周断熱材８ａが配置される側の面を「前面」と呼び、ＰＲＯＸ４ｄが配置される側の面を「後面」と呼び、前面から見て左側の面（改質器左側面断熱材８ｇが配置される側の面）を「左側面」と呼び、前面から見て右側の面（改質器右側面断熱材８ｈが配置される側の面）を「右側面」と呼ぶ。   In the reformer, the surface on the side where the evaporator outer peripheral heat insulating material 8a is arranged is called a “front surface”, the surface on the side where the PROX 4d is arranged is called a “rear surface”, and the left surface as viewed from the front surface ( The surface on the side where the reformer left side heat insulating material 8g is arranged is called the “left side surface”, and the right side surface (the surface on the side where the reformer right side heat insulating material 8h is arranged) as viewed from the front side is “ Called “right side”.

矩形の蒸発器２は、改質器の最も前面側に配置され、高温側が改質器外周に向かう面に配され、低温側が反対側に配される。その後面側に円筒形の改質部１が配置され、その後面側に矩形の予熱器３が、高温側が改質部１に配され低温側が反対側に配されるよう配置される。予熱器３の後面側に低温反応部４が配置される。低温反応部４の内部では、脱硫器４ａが最も前面側に配置され、その後面側に低温シフト反応器第一段４ｂ、低温シフト反応冷却器４ｅ、低温シフト反応器第二段４ｃ、ＰＲＯＸ４ｄがこの順に配置されている。これらの下方に給水予熱器５が配置される。   The rectangular evaporator 2 is disposed on the forefront side of the reformer, the high temperature side is disposed on the surface facing the reformer outer periphery, and the low temperature side is disposed on the opposite side. A cylindrical reformer 1 is disposed on the rear surface side, and a rectangular preheater 3 is disposed on the rear surface side so that the high temperature side is disposed on the reformer 1 and the low temperature side is disposed on the opposite side. A low temperature reaction part 4 is arranged on the rear side of the preheater 3. Inside the low-temperature reaction section 4, the desulfurizer 4a is disposed on the most front side, and on the rear side thereof, the low-temperature shift reactor first stage 4b, the low-temperature shift reaction cooler 4e, the low-temperature shift reactor second stage 4c, and the PROX 4d. Arranged in this order. Below these, the feed water preheater 5 is arranged.

改質器外周と蒸発器２との間には、蒸発器外周断熱材８ａが配置される。蒸発器２と改質部１との間には蒸発器−改質部間断熱材８ｂが配置される。改質部１と予熱器３との間には改質部−予熱器間断熱材８ｃが配置される。予熱器３と脱硫器４ａとの間には予熱器−低温反応部間断熱材８ｄが配置される。改質器左側面外周から、蒸発器２、予熱器３及び低温反応部４の左端部までの間には改質器左側面断熱材８ｇが配置される。改質器右側面外周から、蒸発器２、予熱器３及び低温反応部４の右端部までの間には改質器右側面断熱材８ｈが配置される。改質部１左側面と改質器左側面断熱材８ｇとの間には、改質部左側面断熱材８ｅが配置される。改質部１右側面と改質器右側面断熱材８ｈとの間には、改質部右側面断熱材８ｆが配置される。   Between the reformer outer periphery and the evaporator 2, an evaporator outer peripheral heat insulating material 8a is disposed. Between the evaporator 2 and the reforming section 1, an evaporator-reforming section heat insulating material 8b is disposed. Between the reformer 1 and the preheater 3, a reformer-preheater insulation 8c is disposed. Between the preheater 3 and the desulfurizer 4a, a heat insulator 8d between the preheater and the low temperature reaction part is disposed. A reformer left side heat insulating material 8g is disposed between the outer periphery of the left side of the reformer and the left end of the evaporator 2, the preheater 3, and the low temperature reaction unit 4. A reformer right side heat insulating material 8 h is disposed between the outer periphery of the right side of the reformer and the right end of the evaporator 2, the preheater 3, and the low temperature reaction unit 4. Between the reformer 1 left side and the reformer left side heat insulating material 8g, the reformer left side heat insulating material 8e is disposed. Between the reforming unit 1 right side surface and the reformer right side heat insulating material 8h, the reforming unit right side heat insulating material 8f is disposed.

図１および図２から分かるように、蒸発器２、改質部１、予熱器３、および低温反応部４は、この順序で配列している。ここで、当該配列の方向である第１の方向と直交する第２の方向における改質部１の幅は、上記第２の方向における蒸発器２の幅もしくは予熱器３の幅の少なくとも一方よりも小さくなるように構成される。図２の例では、蒸発器２、予熱器３、および低温反応部４のそれぞれの幅は同じであり、改質部１の幅はそれらよりも小さくなっている。このようにする構成することにより、改質部１の左側および右側に、改質器左側面断熱材８ｇおよび改質器右側面断熱材８ｈに加えて、改質部左側面断熱材８ｅおよび改質部右側面断熱材８ｆを更に配置することが可能となるため、左側面および右側面から外部への無駄な放熱を極力抑えることができ、また、改質部１からの放熱を蒸発器２もしくは予熱器３へ効果的に伝えて回収させることができる。   As can be seen from FIGS. 1 and 2, the evaporator 2, the reforming unit 1, the preheater 3, and the low temperature reaction unit 4 are arranged in this order. Here, the width of the reforming unit 1 in the second direction orthogonal to the first direction that is the direction of the arrangement is greater than at least one of the width of the evaporator 2 or the width of the preheater 3 in the second direction. Is also configured to be smaller. In the example of FIG. 2, the widths of the evaporator 2, the preheater 3, and the low temperature reaction unit 4 are the same, and the width of the reforming unit 1 is smaller than them. With this configuration, the reformer left side heat insulating material 8e and the reformer left side heat insulating material 8h are added to the left and right sides of the reformer 1 in addition to the reformer left side heat insulating material 8g and the reformer right side heat insulating material 8h. Since it is possible to further dispose the mass portion right side heat insulating material 8f, wasteful heat radiation from the left side surface and the right side surface to the outside can be suppressed as much as possible, and the heat radiation from the reforming unit 1 can be reduced to the evaporator 2. Alternatively, it can be effectively transmitted to the preheater 3 for recovery.

図１に示されるように、改質燃料６ａは低温反応部４に含まれる脱硫器４ａに導入され、含有される硫黄系有機化合物が分解され、吸着除去された後、蒸発器２で発生した水蒸気と混合され、予熱器３の低温側に導入される。予熱器３に導入された改質燃料６ａは、高温側を流通する水素リッチガスと熱交換し昇温された後、改質部１の改質反応部１ｃに導入される。改質反応部１ｃではバーナ燃焼空間１ｂからの加熱により改質燃料を水素リッチガスに変換する次式、
ＣｎＨｍ＋ｎＨ２Ｏ→ｎＣＯ＋（ｍ／２＋ｎ）Ｈ２
に示される改質反応が進行する。改質部１から導出された水素リッチガスは予熱器３の高温側に導入され、改質燃料６ａと水蒸気の混合ガスを予熱した後、低温シフト反応器第一段４ｂに導入される。 As shown in FIG. 1, the reformed fuel 6 a is introduced into the desulfurizer 4 a included in the low temperature reaction unit 4, and the sulfur-based organic compound contained is decomposed and removed by adsorption, and then generated in the evaporator 2. It is mixed with water vapor and introduced into the low temperature side of the preheater 3. The reformed fuel 6a introduced into the preheater 3 is introduced into the reforming reaction section 1c of the reforming section 1 after heat-exchanging with the hydrogen rich gas flowing through the high temperature side and being heated. In the reforming reaction section 1c, the following formula for converting the reformed fuel into hydrogen rich gas by heating from the burner combustion space 1b:
C n H m + nH 2 O → nCO + (m / 2 + n) H 2
The reforming reaction shown in FIG. The hydrogen rich gas derived from the reforming unit 1 is introduced to the high temperature side of the preheater 3, premixed with the reformed fuel 6a and water vapor, and then introduced into the first stage 4b of the low temperature shift reactor.

ここで、
ＣＯ＋Ｈ２Ｏ→ＣＯ２＋Ｈ２
の水性ガスシフト反応により、燃料電池に有害なＣＯを減じ、燃料電池の燃料であるＨ２を増やす。低温シフト反応器第一段４ｂから導出された水素リッチガスは、低温シフト反応器第二段４ｃに導入され、低温シフト反応冷却器４ｅに冷却されながら、更にＣＯを減じＨ２を増加させた後、シフト反応器出口ガス６ｃとして導出される。シフト反応器出口ガス６ｃはＰＲＯＸ空気６ｄと混合された後、ＰＲＯＸ入口ガス６ｅとしてＰＲＯＸ４ｄに導入される。ＰＲＯＸ４ｄでは
ＣＯ＋１／２Ｏ２→ＣＯ２
の選択酸化反応が進行し、燃料電池に有害なＣＯを１０ｐｐｍ以下まで減じ、改質器出口ガス６ｆとして導出する。選択酸化反応で発生する熱は、図示しない空冷冷却ファンなどの冷却手段により適切に除去し、温度が過剰に上昇することにより副反応が進行するリスクを防ぐ。 here,
CO + H 2 O → CO 2 + H 2
The water gas shift reaction reduces CO harmful to the fuel cell and increases the fuel cell fuel H2. The hydrogen-rich gas derived from the first stage 4b of the low temperature shift reactor is introduced into the second stage 4c of the low temperature shift reactor and is further cooled by the low temperature shift reaction cooler 4e, further reducing CO and increasing H2. It is derived as shift reactor outlet gas 6c. The shift reactor outlet gas 6c is mixed with the PROX air 6d and then introduced into the PROX 4d as the PROX inlet gas 6e. In PROX4d, CO + 1 / 2O 2 → CO 2
The selective oxidation reaction proceeds, CO harmful to the fuel cell is reduced to 10 ppm or less, and is derived as the reformer outlet gas 6f. The heat generated by the selective oxidation reaction is appropriately removed by a cooling means such as an air-cooling cooling fan (not shown), thereby preventing the risk of a side reaction proceeding due to an excessive rise in temperature.

一方、改質水６ｂは給水予熱器５の低温側に導入され、バーナ排ガスとの熱交換により予熱された後、蒸発器２の低温側に導入され、蒸発器２での熱交換により過熱水蒸気となった後、脱硫器４ａを通過した改質燃料６ａと混合される。   On the other hand, the reformed water 6b is introduced to the low temperature side of the feed water preheater 5, preheated by heat exchange with the burner exhaust gas, and then introduced to the low temperature side of the evaporator 2, and superheated steam is obtained by heat exchange in the evaporator 2. After that, it is mixed with the reformed fuel 6a that has passed through the desulfurizer 4a.

バーナ空気７ａおよびバーナ燃料７ｂは、円筒形の改質部１に組み込まれているバーナ１ａに導入され、バーナ燃焼空間１ｂにて燃焼される。バーナ排気ガスは改質反応部１ｃ内の触媒層を加熱した後、蒸発器２に導入され、改質水を加熱して水蒸気を発生し過熱させる。蒸発器２から導出されたバーナ排気ガスは低温シフト反応冷却器４ｅを通過し、低温シフト反応器第二段４ｃを通過する水素リッチガスとの熱交換により昇温される。低温シフト反応冷却器４ｅから導出されたバーナ排気ガスは給水予熱器５の高温側に導入され、改質水６ｂとの熱交換により温度が低下した後、改質器バーナ出口ガス７ｃとして改質器外に排出される。   The burner air 7a and the burner fuel 7b are introduced into the burner 1a incorporated in the cylindrical reforming section 1 and burned in the burner combustion space 1b. The burner exhaust gas heats the catalyst layer in the reforming reaction section 1c and is then introduced into the evaporator 2 to heat the reformed water to generate steam and superheat it. The burner exhaust gas derived from the evaporator 2 passes through the low temperature shift reaction cooler 4e and is heated by heat exchange with the hydrogen rich gas passing through the low temperature shift reactor second stage 4c. The burner exhaust gas derived from the low temperature shift reaction cooler 4e is introduced to the high temperature side of the feed water preheater 5 and the temperature is lowered by heat exchange with the reforming water 6b, and then reformed as the reformer burner outlet gas 7c. It is discharged outside the vessel.

次に、各流体の流れに沿って反応器の温度について説明する。
まず、改質燃料６ａの流れに沿って説明すると、脱硫器４ａは硫黄系有機化合物を分解、吸着除去する反応を発生させるため、２００〜３００℃の温度を維持することが必要であり、これを予熱器３及び低温シフト反応器第一段４ｂからの伝熱により維持している。脱硫器４ａの下流に位置する予熱器３の低温側は、脱硫器４ａからの改質燃料と蒸発器２からの水蒸気が混合されて導入される。改質燃料は２００〜３００℃であり、水蒸気は１５０〜３５０℃なので、予熱器３の入口温度は１５０〜３５０℃である。改質燃料と水蒸気の混合ガスは、予熱器３での熱交換により改質反応が開始する３５０〜４５０℃にまで昇温される。 Next, the temperature of the reactor will be described along the flow of each fluid.
First, in accordance with the flow of the reformed fuel 6a, the desulfurizer 4a needs to maintain a temperature of 200 to 300 ° C. in order to generate a reaction that decomposes and adsorbs and removes the sulfur-based organic compound. Is maintained by heat transfer from the preheater 3 and the first stage 4b of the low temperature shift reactor. On the low temperature side of the preheater 3 located downstream of the desulfurizer 4a, the reformed fuel from the desulfurizer 4a and the steam from the evaporator 2 are mixed and introduced. Since the reformed fuel is 200 to 300 ° C. and the steam is 150 to 350 ° C., the inlet temperature of the preheater 3 is 150 to 350 ° C. The mixed gas of reformed fuel and steam is heated to 350 to 450 ° C. at which the reforming reaction starts by heat exchange in the preheater 3.

改質燃料と水蒸気の混合ガスは改質部１の改質反応部１ｃ内の改質触媒層に導入された後、バーナ排気ガスからの伝熱により、出口に向かって昇温されながら吸熱反応である改質反応が進み、水素リッチガスに変換される。改質反応部１ｃのガス相温度は入口で４００〜５００℃だが、出口では改質反応に好適な６００〜７００℃にまで昇温される。改質触媒層から導出された６００〜７００℃の水素リッチガスは、改質触媒層の外側かつ改質部１の外表面の内側に配置された再生室１ｄを改質触媒層と熱交換しながら降温し、４００〜５００℃で導出される。このため、改質部の外表面の温度は、再生室１ｄ入口で６００〜７００℃、出口で４００〜５００℃になる。   After the mixed gas of reformed fuel and steam is introduced into the reforming catalyst layer in the reforming reaction section 1c of the reforming section 1, the endothermic reaction is performed while the temperature is raised toward the outlet by heat transfer from the burner exhaust gas. The reforming reaction proceeds and is converted to a hydrogen rich gas. The gas phase temperature of the reforming reaction section 1c is 400 to 500 ° C. at the inlet, but is raised to 600 to 700 ° C. suitable for the reforming reaction at the outlet. The hydrogen-rich gas at 600 to 700 ° C. derived from the reforming catalyst layer exchanges heat with the reforming catalyst layer in the regeneration chamber 1 d disposed outside the reforming catalyst layer and inside the outer surface of the reforming unit 1. The temperature is lowered and is derived at 400 to 500 ° C. For this reason, the temperature of the outer surface of the reforming section is 600 to 700 ° C. at the inlet of the regeneration chamber 1d and 400 to 500 ° C. at the outlet.

再生室１ｄから導出された４００〜５００℃の水素リッチガスは、予熱器３の高温側に導入され、低温側を流通する改質燃料と水蒸気の混合ガスと熱交換し、２００〜３００℃に降温する。   The hydrogen-rich gas of 400 to 500 ° C. derived from the regeneration chamber 1d is introduced to the high temperature side of the preheater 3 and exchanges heat with the mixed gas of reformed fuel and steam flowing through the low temperature side, and the temperature is lowered to 200 to 300 ° C. To do.

予熱器３の高温側から導出された２００〜３００℃の水素リッチガスは、低温シフト反応器第一段４ｂに導入される。低温シフト反応器第一段４ｂでは水性ガスシフト反応による発熱があるが、隣接する脱硫器４ａ及び低温シフト反応冷却器４ｅへの伝熱により、出口温度は２００〜３００℃に保たれる。   The hydrogen rich gas of 200 to 300 ° C. derived from the high temperature side of the preheater 3 is introduced into the first stage 4b of the low temperature shift reactor. In the first stage 4b of the low temperature shift reactor, heat is generated by the water gas shift reaction, but the outlet temperature is maintained at 200 to 300 ° C. by heat transfer to the adjacent desulfurizer 4a and the low temperature shift reaction cooler 4e.

低温シフト反応器第一段４ｂから導出された２００〜３００℃の水素リッチガスは、低温シフト反応器第二段４ｃに導入される。低温シフト反応器第二段４ｃでは水性ガスシフト反応による発熱があるが、隣接する低温シフト反応冷却器４ｅ及びＰＲＯＸ４ｄへの伝熱により、出口温度は１００〜２５０℃に降温する。   The hydrogen rich gas at 200 to 300 ° C. derived from the first stage 4b of the low temperature shift reactor is introduced into the second stage 4c of the low temperature shift reactor. In the low temperature shift reactor second stage 4c, heat is generated by the water gas shift reaction, but the outlet temperature is lowered to 100 to 250 ° C. by heat transfer to the adjacent low temperature shift reaction cooler 4e and PROX 4d.

低温シフト反応器第二段４ｃから導出された１００〜２５０℃のシフト反応器出口ガス６ｃは、図示しない冷却器で１００℃以下に冷却された後、ＰＲＯＸ空気６ｄと混合され、ＰＲＯＸ入口ガス６ｅとしてＰＲＯＸ４ｄに導入される。ＰＲＯＸ４ｄ入口でのガス温度は１００℃以下であり、出口では選択酸化反応の発熱により１００〜２００℃に昇温された後、改質器出口ガス６ｆとして導出される。   The shift reactor outlet gas 6c at 100 to 250 ° C. derived from the second stage 4c of the low temperature shift reactor is cooled to 100 ° C. or lower by a cooler (not shown), and then mixed with the PROX air 6d to produce the PROX inlet gas 6e. Is introduced into PROX4d. The gas temperature at the inlet of the PROX 4d is 100 ° C. or lower, and at the outlet, the temperature is raised to 100 to 200 ° C. due to the heat generated by the selective oxidation reaction, and is then derived as the reformer outlet gas 6f.

次に、改質水の流れに沿って温度を説明する。給水予熱器５の低温側入口の温度は給水される水の温度だが、多くの場合給水予熱器５内で沸騰が始まるので、出口では流路の圧力に対応する沸点まで温度が上昇し、１００℃強に達する。続いて蒸発器２に導入されると、入口から途中までは沸騰のため１００℃強一定だが、沸騰が完了し過熱され始めると温度が上昇する。ここで、水蒸気が十分過熱されず、二相流のまま蒸発器２から導出されると、脱硫器４ａに水が逆流して脱硫器４ａの機能を阻害する可能性がある。一方で、水蒸気の温度が高いことは、昇温のため多くのバーナ燃料４ｂを投入していることを意味し、エネルギー効率の上で望ましくない。このため、改質器の運転条件を適切に設定することで、過熱された水蒸気の温度が１５０〜３５０℃の間になるよう調整することが望ましい。   Next, the temperature will be described along the flow of the reforming water. The temperature at the low temperature side inlet of the feed water preheater 5 is the temperature of the water to be fed. However, in many cases, boiling starts in the feed water preheater 5, so that the temperature rises to the boiling point corresponding to the pressure of the flow path at the outlet. Reaching over ℃. Subsequently, when introduced into the evaporator 2, the temperature from the inlet to the middle is a little over 100 ° C. due to boiling, but the temperature rises when boiling is completed and overheating begins. Here, if the water vapor is not sufficiently heated and is led out from the evaporator 2 in a two-phase flow, water may flow backward to the desulfurizer 4a, thereby hindering the function of the desulfurizer 4a. On the other hand, the high temperature of water vapor means that a large amount of burner fuel 4b is introduced for temperature rise, which is not desirable in terms of energy efficiency. For this reason, it is desirable to adjust the temperature of the superheated steam to be between 150 to 350 ° C. by appropriately setting the operating conditions of the reformer.

次に、バーナ排気ガスの流れに沿って温度を説明する。バーナ燃焼空間１ｂで燃焼されたバーナ排気ガスは、改質触媒層との熱交換により降温し、改質部１出口では３００〜５００℃になる。改質部１から導出されたバーナ排気ガスは、蒸発器２の高温側に導入され、改質水と熱交換し沸騰させることにより１００℃強にまで冷却される。蒸発器２の高温側から導出された１００℃強のバーナ排気ガスは、低温シフト反応冷却器４ｅに導入され、低温シフト反応器第一段４ｂ及び低温シフト反応器第二段４ｃとの熱交換により１５０〜２００℃にまで昇温される。低温シフト反応冷却器４ｅから導出された１５０〜２００℃のバーナ排気ガスは、給水予熱器５の高温側に導入され、改質水と熱交換し沸騰を開始させることにより１００℃強まで冷却された後、改質器バーナ出口ガス７ｃとして導出される。   Next, the temperature will be described along the flow of the burner exhaust gas. The burner exhaust gas burned in the burner combustion space 1b is cooled by heat exchange with the reforming catalyst layer, and reaches 300 to 500 ° C. at the reforming section 1 outlet. The burner exhaust gas led out from the reforming unit 1 is introduced to the high temperature side of the evaporator 2 and is cooled to a little over 100 ° C. by exchanging heat with the reforming water and boiling. Burner exhaust gas of slightly over 100 ° C derived from the high temperature side of the evaporator 2 is introduced into the low temperature shift reaction cooler 4e, and heat exchange with the low temperature shift reactor first stage 4b and the low temperature shift reactor second stage 4c. The temperature is raised to 150 to 200 ° C. The 150-200 ° C. burner exhaust gas derived from the low temperature shift reaction cooler 4 e is introduced to the high temperature side of the feed water preheater 5 and is cooled to over 100 ° C. by exchanging heat with the reforming water and starting boiling. After that, the reformer burner outlet gas 7c is led out.

次に、各反応器の表面温度を説明する。各反応器の表面温度は内部を流通する流体の温度に相当している。   Next, the surface temperature of each reactor will be described. The surface temperature of each reactor corresponds to the temperature of the fluid flowing inside.

矩形である蒸発器２の、蒸発器外周断熱材８ａに面する高温側の表面温度は、バーナ排気ガスの入口が３００〜５００℃、出口が１００℃強である。蒸発器２の、蒸発器−改質部間断熱材８ｂに面する低温側の表面温度は、改質水の入口が１００℃強、出口が１５０〜３５０℃である。   The surface temperature of the rectangular evaporator 2 on the high temperature side facing the evaporator outer peripheral heat insulating material 8a is 300 to 500 ° C. at the burner exhaust gas inlet and slightly over 100 ° C. at the outlet. The surface temperature of the evaporator 2 on the low temperature side facing the evaporator-reformer heat insulating material 8b is slightly over 100 ° C. at the reforming water inlet and 150-350 ° C. at the outlet.

円筒形である改質部１の、蒸発器−改質部間断熱材８ｂに接する面の表面温度は、再生室１ｄのガス温度に相当する。従って、再生室１ｄ入口近傍の表面が６００〜７００℃、出口近傍の表面が４００〜５００℃になる。改質部−予熱器間断熱材８ｃに接する面の表面温度も同様に、再生室１ｄ入口近傍の表面が６００〜７００℃、出口近傍の表面が４００〜５００℃になる。   The surface temperature of the surface of the reforming section 1 that is cylindrical and in contact with the evaporator-reforming section heat insulating material 8b corresponds to the gas temperature of the regeneration chamber 1d. Accordingly, the surface near the inlet of the regeneration chamber 1d is 600 to 700 ° C., and the surface near the outlet is 400 to 500 ° C. Similarly, the surface temperature of the surface in contact with the reformer-preheater insulating material 8c is 600 to 700 ° C. near the inlet of the regeneration chamber 1d and 400 to 500 ° C. near the outlet.

矩形である予熱器３の、改質部−予熱器間断熱材８ｃに面する側は、高温側である。従って、水素リッチガスの入口側が４００〜５００℃、出口側が２００〜３００℃である。予熱器３の、予熱器−低温反応部間断熱材８ｄに面する側は、低温側である。従って、表面温度は、改質燃料と水蒸気の混合ガスの入口側が１５０〜３５０℃、出口側が３５０〜４５０℃である。   The side of the rectangular preheater 3 that faces the reforming part-preheater insulation 8c is the high temperature side. Accordingly, the inlet side of the hydrogen rich gas is 400 to 500 ° C., and the outlet side is 200 to 300 ° C. The side of the preheater 3 facing the preheater-low temperature reaction part heat insulating material 8d is the low temperature side. Therefore, the surface temperature is 150 to 350 ° C. on the inlet side and 350 to 450 ° C. on the outlet side of the mixed gas of reformed fuel and steam.

矩形である脱硫器４ａの、予熱器−低温反応部間断熱材８ｄに面する側の表面温度は、内部のガス温度と同様２００〜３００℃である。   The surface temperature of the rectangular desulfurizer 4a facing the preheater-low temperature reaction part heat insulating material 8d is 200 to 300 ° C., similar to the internal gas temperature.

矩形である低温シフト反応器第一段４ｂの表面温度は、内部のガス温度と同様、水素リッチガスの入出口とも２００〜３００℃である。   The surface temperature of the rectangular low-temperature shift reactor first stage 4b is 200 to 300 ° C. at both the inlet and outlet of the hydrogen-rich gas, similarly to the internal gas temperature.

矩形である低温シフト反応器第二段４ｃの表面温度は、内部のガス温度と同様、水素リッチガスの入口側が２００〜３００℃、出口側が１００〜２５０℃である。   The surface temperature of the rectangular low-temperature shift reactor second stage 4c is 200 to 300 ° C. on the inlet side of the hydrogen-rich gas and 100 to 250 ° C. on the outlet side, like the internal gas temperature.

矩形であるＰＲＯＸ４ｄの表面温度は、内部のガス温度と同様、水素リッチガスの入口側が１００℃以下、出口側が１００〜２００℃である。   The surface temperature of the rectangular PROX 4d is 100 ° C. or lower on the inlet side of the hydrogen-rich gas and 100 to 200 ° C. on the outlet side, similarly to the internal gas temperature.

給水予熱器５は、高温側であるバーナ排気ガス流路を、低温側である改質水の水室が囲う構成である。このため、表面温度は沸騰している改質水温度と同様、１００℃強である。   The feed water preheater 5 has a configuration in which a burner exhaust gas passage on the high temperature side is surrounded by a water chamber for reforming water on the low temperature side. For this reason, the surface temperature is slightly over 100 ° C., similar to the boiling reforming water temperature.

各反応器の温度は上記の通りであり、改質部１表面が最も高温である。流通する流体が改質部１に供給する蒸発器２と予熱器３を改質部１前後に配置することにより、改質部１からの伝熱を回収しエネルギー効率を上げることができる。また、蒸発器外周断熱材８ａ、蒸発器−改質部間断熱材８ｂ、改質部−予熱器間断熱材８ｃ、予熱器−低温反応部間断熱材８ｄを配置することで、それぞれの反応器を適正な温度に保つことができる。   The temperature of each reactor is as described above, and the surface of the reforming unit 1 is the hottest. By disposing the evaporator 2 and the preheater 3 that the circulating fluid supplies to the reforming unit 1 before and after the reforming unit 1, the heat transfer from the reforming unit 1 can be recovered and the energy efficiency can be increased. Further, by arranging the evaporator outer peripheral heat insulating material 8a, the evaporator-reforming part heat insulating material 8b, the reforming part-preheater heat insulating material 8c, and the preheater-low temperature reaction part heat insulating material 8d, the respective reactions. The vessel can be kept at the proper temperature.

次に、各断熱材の表面温度を説明する。断熱材の表面温度は、隣接する反応器の表面温度に相当する。   Next, the surface temperature of each heat insulating material will be described. The surface temperature of the heat insulating material corresponds to the surface temperature of the adjacent reactor.

蒸発器外周断熱材８ａの前面側表面温度は改質器外表面温度だが、後面側表面温度は蒸発器２の高温側表面温度と同様でありバーナ排気ガスの入口が３００〜５００℃、出口が１００℃強である。従って、蒸発器外周断熱材８ａの厚み方向の温度差は、改質器外表面温度を５０℃としてバーナ排気の入口が２５０〜４５０℃、出口が約５０℃になる。   The front surface temperature of the evaporator outer peripheral heat insulating material 8a is the reformer outer surface temperature, but the rear surface temperature is the same as the high temperature surface temperature of the evaporator 2, the burner exhaust gas inlet is 300 to 500 ° C, and the outlet is It is slightly over 100 ° C. Therefore, the temperature difference in the thickness direction of the evaporator outer peripheral heat insulating material 8a is such that the reformer outer surface temperature is 50 ° C., the burner exhaust inlet is 250 to 450 ° C., and the outlet is about 50 ° C.

蒸発器−改質部間断熱材８ｂの前面側表面温度は、蒸発器２の低温側表面温度と同様、改質水の入口が１００℃強、出口が１５０〜３５０℃である。後面側表面温度は、再生室１ｄの入口近傍の表面が６００〜７００℃、出口近傍の表面が４００〜５００℃になる。図１から明らかなように、蒸発器２の改質水流路は入口が下側で出口が上側、再生室１ｄは入口が下側で出口が上側なので、蒸発器−改質部間断熱材８ｂの厚み方向温度差は、下側で５００〜６００℃、上側で５０〜３５０℃である。   The front surface side surface temperature of the evaporator-reformer insulating material 8b is the same as the low temperature surface temperature of the evaporator 2, with the reformed water inlet being slightly over 100 ° C and the outlet being 150-350 ° C. The surface temperature near the entrance of the regeneration chamber 1d is 600 to 700 ° C., and the surface near the exit is 400 to 500 ° C. As is clear from FIG. 1, the reformer water flow path of the evaporator 2 has a lower inlet and an upper outlet, and the regeneration chamber 1d has a lower inlet and an upper outlet. The temperature difference in the thickness direction is 500 to 600 ° C. on the lower side and 50 to 350 ° C. on the upper side.

改質部−予熱器間断熱材８ｃの前面側表面温度は改質部１表面温度と同様であり、再生室１ｄの入口近傍の表面が６００〜７００℃、出口近傍の表面が４００〜５００℃になる。後面側表面温度は、予熱器３高温側の表面温度と同様であり、水素リッチガスの入口側が４００〜５００℃、出口側が２００〜３００℃である。図１から明らかなように、再生室１ｄは入口が下側で出口が上側、予熱器３高温側流路は入口が上側で出口が下側なので、改質部−予熱器間断熱材８ｃの厚み方向温度差は、下側で３００〜５００℃、上側で０〜１００℃である。   The surface temperature of the front surface of the reformer-preheater insulating material 8c is the same as the surface temperature of the reformer 1 and the surface near the inlet of the regeneration chamber 1d is 600 to 700 ° C, and the surface near the outlet is 400 to 500 ° C. become. The rear side surface temperature is the same as the surface temperature on the high temperature side of the preheater 3, and the hydrogen rich gas inlet side is 400 to 500 ° C. and the outlet side is 200 to 300 ° C. As is apparent from FIG. 1, the regeneration chamber 1d has a lower inlet and an upper outlet, and the preheater 3 high-temperature side channel has an upper inlet and a lower outlet. The thickness direction temperature difference is 300 to 500 ° C. on the lower side and 0 to 100 ° C. on the upper side.

予熱器−低温反応部間断熱材８ｄの前面側表面温度は、予熱器３低温側の表面温度と同様であり、燃料と水蒸気の混合ガスの入口側が１５０〜３５０℃、出口側が３５０〜４５０℃である。後面側表面温度は、脱硫器４ａの表面温度と同様であり、２００〜３００℃である。従って、予熱器−低温反応部間断熱材８ｄの厚み方向温度差は、予熱器３側を高温として−５０〜２５０℃である。   The surface temperature on the front surface side of the preheater-low temperature reaction part heat insulating material 8d is the same as the surface temperature on the low temperature side of the preheater 3, and the inlet side of the mixed gas of fuel and steam is 150 to 350 ° C, and the outlet side is 350 to 450 ° C. It is. The rear surface temperature is the same as the surface temperature of the desulfurizer 4a and is 200 to 300 ° C. Therefore, the temperature difference in the thickness direction of the preheater-low temperature reaction part heat insulating material 8d is −50 to 250 ° C. with the preheater 3 side at a high temperature.

改質器左側面断熱材８ｇの右側面表面温度は各反応器により相違し、最高は予熱器３高温側の上部４００〜５００℃、最低はＰＲＯＸ５入口の１００℃以下である。内部に最大４００℃の温度差があるので、左側面表面温度も場所によって変わるが、表面温度が高温であると外部への放熱が増大しエネルギー効率の上で不利となるので、各反応器間の温度の相違に関わらず雰囲気温度＋１５℃〜３５℃となるよう、断熱材厚みを調整することが通例である。これは改質器右側面断熱材８ｈについても同様である。   The right side surface temperature of the reformer left side heat insulating material 8g is different depending on each reactor, and the maximum is 400 to 500 ° C. at the upper part on the high temperature side of the preheater 3 and the lowest is 100 ° C. or lower at the PROX 5 inlet. Since there is a maximum temperature difference of 400 ° C inside, the surface temperature on the left side also varies depending on the location, but if the surface temperature is high, heat dissipation to the outside increases and this is disadvantageous in terms of energy efficiency. It is customary to adjust the thickness of the heat insulating material so that the ambient temperature becomes + 15 ° C. to 35 ° C. regardless of the temperature difference. The same applies to the reformer right side heat insulating material 8h.

改質部左側面断熱材８ｅの右面側表面温度は、改質部１表面温度と同様であり、下側が６００〜７００℃、上側が４００〜５００℃になる。左側表面温度は、改質器左側面断熱材８ｇの右側面表面温度に等しい。改質器左側面断熱材８ｇの左側面において、改質部１に相当する位置がほかの部分より高温となり、放熱源となることはエネルギー効率の上で不利となる。従って、改質器左側面断熱材８ｇ左側面の改質部１に相当する位置の温度は、他の反応器と同じかより低いことが望ましい。よって、全点で予熱器３高温側の上部４００〜５００℃と同じか、より低温であることが望ましい。これは改質部右側面断熱材８ｆについても同様である。   The right side surface temperature of the modified part left side heat insulating material 8e is the same as the modified part 1 surface temperature, and the lower side is 600 to 700 ° C and the upper side is 400 to 500 ° C. The left side surface temperature is equal to the right side surface temperature of the reformer left side heat insulating material 8g. On the left side surface of the reformer left side heat insulating material 8g, the position corresponding to the reforming portion 1 becomes higher than other portions, and it becomes disadvantageous in terms of energy efficiency to become a heat radiation source. Accordingly, the temperature at the position corresponding to the reforming section 1 on the left side surface of the reformer left side heat insulating material 8g is desirably the same as or lower than that of the other reactors. Therefore, it is desirable that the temperature is the same as or lower than the upper 400 to 500 ° C. on the high temperature side of the preheater 3 in all points. The same applies to the modified portion right side heat insulating material 8f.

本実施形態における望ましい各断熱材の厚みの相関関係について説明する。   The correlation of the thickness of each desirable heat insulating material in this embodiment is demonstrated.

まず、改質部１に着目する。改質部１は蒸発器−改質部間断熱材８ｂ、改質部−予熱器間断熱材８ｃ、改質部左側面断熱材８ｅ、改質部右側面断熱材８ｆで囲まれている。   First, focus on the reforming unit 1. The reforming section 1 is surrounded by an evaporator-reforming section heat insulating material 8b, a reforming section-preheater heat insulating material 8c, a reforming section left side heat insulating material 8e, and a reforming section right side heat insulating material 8f.

蒸発器−改質部間断熱材８ｂの厚み方向の温度差は、前述の通り下側で５００〜６００℃、上側で５０〜３５０℃である。一方、改質部−予熱器間断熱材８ｃの厚み方向温度差は、下側で３００〜５００℃、上側で０〜１００℃である。蒸発器−改質部間断熱材８ｂの温度差は、改質部−予熱器間断熱材８ｃに比べて大きい。   The temperature difference in the thickness direction of the evaporator-reformed portion heat insulating material 8b is 500 to 600 ° C. on the lower side and 50 to 350 ° C. on the upper side as described above. On the other hand, the thickness direction temperature difference of the reforming part-preheater heat insulating material 8c is 300 to 500 ° C on the lower side and 0 to 100 ° C on the upper side. The temperature difference between the evaporator-reformer insulation 8b is larger than that of the reformer-preheater insulation 8c.

改質部１側の表面温度に大きな相違があると、周方向に応力が発生して耐久性に影響するリスクがあるため、大きな差がないよう設計することが望ましい。   If there is a large difference in the surface temperature on the modified portion 1 side, there is a risk that stress is generated in the circumferential direction and affects the durability, so it is desirable to design so that there is no large difference.

従って、蒸発器−改質部間断熱材８ｂの熱抵抗を、改質部−予熱器間断熱材８ｃと同じか、より高くする必要がある。改質部−予熱器間断熱材８ｃの最小厚みを、蒸発器−改質部間断熱材８ｂの最小厚みと同じかより小さくすることで、改質部１の表面温度の周方向の差を抑えることができる。   Therefore, it is necessary to make the thermal resistance of the evaporator-reformer insulation 8b the same as or higher than that of the reformer-preheater insulation 8c. By making the minimum thickness of the reformer-preheater insulation 8c equal to or smaller than the minimum thickness of the evaporator-reformer insulation 8b, the difference in the circumferential direction of the surface temperature of the reformer 1 can be reduced. Can be suppressed.

蒸発器−改質部間断熱材８ｂを通過する改質部１からの伝熱は、蒸発器２の低温側を加熱し、水蒸気の熱として改質部１に戻る。また、改質部−予熱器間断熱材８ｃを通過する伝熱は、予熱器３の高温側を加熱し、予熱器３の低温側への伝熱により改質部１に戻るか、低温シフト反応器第一段４ｂ入口温度を上昇させて反応温度の維持に使用される。   The heat transfer from the reforming unit 1 passing through the evaporator-reforming unit heat insulating material 8b heats the low temperature side of the evaporator 2 and returns to the reforming unit 1 as heat of steam. Further, the heat transfer passing through the reformer-preheater insulation 8c heats the high temperature side of the preheater 3 and returns to the reformer 1 by heat transfer to the low temperature side of the preheater 3, or a low temperature shift. It is used to maintain the reaction temperature by raising the inlet temperature of the reactor first stage 4b.

一方、改質部左側面断熱材８ｅもしくは改質部右側面断熱材８ｆを通過する改質部１からの伝熱は、改質器左側面断熱材８ｇもしくは改質器右側面断熱材８ｈを通過して改質器外に放熱される。エネルギー効率の上から、改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの熱抵抗が、蒸発器−改質部間断熱材８ｂ及び改質部−予熱器間断熱材８ｃの熱抵抗より大きく、厚い必要がある。図２から明らかなように、改質部左側面断熱材８ｅの厚みと改質部右側面断熱材８ｆの厚みの和は、蒸発器２及び予熱器３の左右方向幅から改質部１の最大直径を引いた値に等しい。これらを定式化すると、次のようになる。   On the other hand, the heat transfer from the reforming unit 1 that passes through the reforming unit left side heat insulating material 8e or the reforming unit right side heat insulating material 8f passes through the reformer left side heat insulating material 8g or the reformer right side heat insulating material 8h. It passes through and is dissipated outside the reformer. From the viewpoint of energy efficiency, the thermal resistance of the reformer left side heat insulating material 8e and the reformer right side heat insulating material 8f is determined by the evaporator-reformer heat insulator 8b and the reformer-preheater heat insulator 8c. It must be larger and thicker than the thermal resistance. As apparent from FIG. 2, the sum of the thickness of the reforming portion left side heat insulating material 8 e and the thickness of the reforming portion right side heat insulating material 8 f is determined from the lateral width of the evaporator 2 and the preheater 3. Equal to the maximum diameter minus. These are formulated as follows.

（蒸発器２及び予熱器３の左右方向幅）−（改質部１の最大直径）
＝（改質部左側面断熱材８ｅ厚み）＋（改質部右側面断熱材８ｆ厚み）
≧２×ｍｉｎ（（改質部左側面断熱材８ｅ厚み），（改質部右側面断熱材８ｆ厚み））
＞２×ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−予熱器間断熱材８ｃ厚み））
更にこれを変形して整理すると、次のようになる。 (Width in the left-right direction of the evaporator 2 and the preheater 3)-(maximum diameter of the reforming unit 1)
= (Modified part left side heat insulating material 8e thickness) + (modified part right side heat insulating material 8f thickness)
≧ 2 × min ((modified part left side heat insulating material 8e thickness), (modified part right side heat insulating material 8f thickness))
> 2 × max ((thickness of the heat insulating material 8b between the evaporator and the reformer), (thickness of the heat insulating material 8b between the reformer and the preheater))
Furthermore, when this is transformed and arranged, it becomes as follows.

（蒸発器２及び予熱器３の左右方向幅）
＞（改質部１の最大直径）＋２×ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−予熱器間断熱材８ｃ厚み））
すなわち、蒸発器２及び予熱器３の左右方向幅が、改質部１の最大直径に、蒸発器−改質部断熱材８ｂ厚みもしくは改質部−予熱器間断熱材８ｃ厚みのいずれか大きい方の２倍を加えた値より大きいことが、改質部１から改質器外への放熱を抑えるための必要条件である。 (Width in the left-right direction of the evaporator 2 and the preheater 3)
> (Maximum diameter of the reforming section 1) + 2 × max ((thickness of the heat insulating material 8b between the evaporator and the reforming section), (thickness of the heat insulating material 8b between the reforming section and the preheater))
That is, the width in the left-right direction of the evaporator 2 and the preheater 3 is larger than the maximum diameter of the reformer 1, either the thickness of the evaporator-reformer heat insulator 8 b or the thickness of the reformer-preheater heat insulator 8 c. It is a necessary condition for suppressing the heat radiation from the reforming unit 1 to the outside of the reformer to be larger than the value obtained by adding twice the value.

次に、蒸発器２に着目する。蒸発器２の前面側には蒸発器外周断熱材８ａが配置され、後面側には蒸発器−改質部間断熱材８ｂが配置される。   Next, attention is paid to the evaporator 2. The evaporator outer peripheral heat insulating material 8a is disposed on the front side of the evaporator 2, and the evaporator-reforming section heat insulating material 8b is disposed on the rear surface side.

蒸発器２の熱収支では、蒸発器−改質部間断熱材８ｂを通じて熱を受け取り、蒸発器外周断熱材８ａを通じて放熱する。蒸発器２での水蒸気発生と過熱を維持するためには、入熱に比べて放熱を抑える必要がある。蒸発器−改質部間断熱材８ｂ最小厚みを、蒸発器外周断熱材８ａ最小厚みより小さくすることで、蒸発器外周断熱材８ａの熱抵抗を蒸発器−改質部間断熱材８ｂの熱抵抗より大きくでき、蒸発器１からの放熱を入熱より低く抑えることができる。   In the heat balance of the evaporator 2, heat is received through the evaporator-reforming section heat insulating material 8b and is radiated through the evaporator outer peripheral heat insulating material 8a. In order to maintain steam generation and overheating in the evaporator 2, it is necessary to suppress heat dissipation compared to heat input. By making the minimum thickness of the evaporator-reformer heat insulating material 8b smaller than the minimum thickness of the evaporator outer heat insulating material 8a, the heat resistance of the evaporator outer heat insulating material 8a can be reduced. It can be larger than the resistance, and heat dissipation from the evaporator 1 can be suppressed lower than the heat input.

次に、予熱器３に着目する。予熱器３の前面側には改質部−予熱器間断熱材８ｃが配置され、後面側には予熱器−低温反応部間断熱材８ｄが配置される。   Next, attention is paid to the preheater 3. A reformer-preheater insulation 8c is disposed on the front side of the preheater 3, and a preheater-low temperature reaction section insulation 8d is disposed on the rear side.

予熱器３の熱収支では、改質部−予熱器間断熱材８ｃを通じて熱を受け取り、予熱器−低温反応部間断熱材８ｄを通じて放熱する。改質反応部１ｃに供給するガスの温度を４００〜５００℃に維持するためには、予熱器３温度を維持する必要があり、入熱に比べて放熱を抑える必要がある。改質部−予熱器間断熱材８ｃ最小厚みを、予熱器−低温反応部間断熱材８ｄ最小厚みより小さくすることで、予熱器−低温反応部間断熱材８ｄの熱抵抗を改質部−予熱器間断熱材８ｃの熱抵抗より大きくでき、予熱器３からの放熱を入熱より低く抑えることができる。   In the heat balance of the preheater 3, heat is received through the reforming part-preheater heat insulating material 8c, and is radiated through the preheater-low temperature reaction part heat insulating material 8d. In order to maintain the temperature of the gas supplied to the reforming reaction section 1c at 400 to 500 ° C., it is necessary to maintain the preheater 3 temperature, and it is necessary to suppress heat radiation compared to heat input. By making the minimum thickness of the heat insulating material 8c between the reforming part and the preheater smaller than the minimum thickness of the heat insulating material 8d between the preheater and the low temperature reaction part, the thermal resistance of the heat insulating material 8d between the preheater and the low temperature reaction part is improved. The heat resistance of the inter-preheater insulating material 8c can be made larger, and the heat radiation from the preheater 3 can be kept lower than the heat input.

第１の実施形態によれば、例えば改質部１を矩形の蒸発器２と予熱器３で挟みこむ構成において次のような利点がある。第一に蒸発器２及び予熱器３の左右幅の範囲で改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの厚みを確保できるので、改質器外周の左右幅は蒸発器２及び予熱器３の幅で決まり、改質部１の断熱が原因で改質器全体の左右幅が増大することがない。第二に改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの厚みを確保しても、蒸発器−改質部間断熱材８ｂ及び改質部−予熱器間断熱材８ｃの厚み増大につながらないため、改質部１の断熱が原因で改質器全体の前後長さが増大することはない。上記のような構成により、必要な断熱を確保しながら改質器全体の表面積増大を抑えて改質器外表面からの放熱を抑制し、エネルギー効率を増大させることができる。   According to the first embodiment, for example, the configuration in which the reforming unit 1 is sandwiched between the rectangular evaporator 2 and the preheater 3 has the following advantages. First, since the thickness of the reforming unit left side heat insulating material 8e and the reforming unit right side heat insulating material 8f can be secured in the range of the left and right widths of the evaporator 2 and the preheater 3, the left and right widths of the reformer outer periphery are the evaporators. 2 and the width of the preheater 3, and the horizontal width of the entire reformer does not increase due to the heat insulation of the reforming unit 1. Secondly, even if the thickness of the reforming part left side heat insulating material 8e and the reforming part right side heat insulating material 8f is secured, the evaporator-reforming part heat insulating material 8b and the reforming part-preheater heat insulating material 8c Since the thickness does not increase, the length of the entire reformer does not increase due to the heat insulation of the reforming section 1. With the configuration as described above, it is possible to suppress an increase in the surface area of the entire reformer while suppressing necessary heat insulation, suppress heat release from the outer surface of the reformer, and increase energy efficiency.

（第２の実施形態）
第２の実施形態に係る燃料電池発電装置に備えられる改質器について図３を参照して説明する。なお、前述の各実施形態と共通する要素には同一の符号を付し、重複する説明を省略する。 (Second Embodiment)
A reformer provided in a fuel cell power generator according to a second embodiment will be described with reference to FIG. In addition, the same code | symbol is attached | subjected to the element which is common in each above-mentioned embodiment, and the overlapping description is abbreviate | omitted.

図３は、第２の実施形態に係る改質器を上から見た場合の概略構成を示す上面図である。   FIG. 3 is a top view showing a schematic configuration when the reformer according to the second embodiment is viewed from above.

第２の実施形態は、第１の実施形態と比べ、給水予熱器５が配置される位置が異なる。   2nd Embodiment differs in the position where the feed water preheater 5 is arrange | positioned compared with 1st Embodiment.

給水予熱器５は、改質部１の、蒸発器２にも予熱器３にも面しない位置に配置される。   The feed water preheater 5 is disposed at a position of the reforming unit 1 that does not face the evaporator 2 or the preheater 3.

図３の例では、給水予熱器５が改質部１の左側面に配置されているが、右側面に配置されてもよい。給水予熱器５の改質部１に向かう面は低温側であり、改質器外周に向かう面は高温側である。   In the example of FIG. 3, the feed water preheater 5 is disposed on the left side surface of the reforming unit 1, but may be disposed on the right side surface. The surface of the feed water preheater 5 toward the reforming unit 1 is on the low temperature side, and the surface toward the reformer outer periphery is on the high temperature side.

給水予熱器５を第２の実施形態のように配置すると、第１の実施形態の場合に比べ、給水予熱器５の形状に上下方向の制約が少なく配置しやすいこと、配管接続のための空間が取りやすいため、本実施形態では図示しないがシフト反応器出口ガス６ｃを追加熱源として利用することが可能であること、後述する改質部１からの伝熱を利用することでエネルギー効率の上昇が見込めることが利点として挙げられる。   When the feed water preheater 5 is arranged as in the second embodiment, the shape of the feed water preheater 5 is less likely to be placed in the vertical direction than in the first embodiment, and the space for pipe connection However, although not shown in the present embodiment, it is possible to use the shift reactor outlet gas 6c as an additional heat source, and to increase energy efficiency by using heat transfer from the reforming unit 1 described later. Can be expected as an advantage.

改質器外周と蒸発器２との間には、蒸発器外周断熱材８ａが配置される。蒸発器２と改質部１との間には蒸発器−改質部間断熱材８ｂが配置される。改質部１と予熱器３との間には改質部−予熱器間断熱材８ｃが配置される。予熱器３と脱硫器４ａとの間には予熱器−低温反応部間断熱材８ｄが配置される。改質器左側面外周から、蒸発器２、予熱器３、低温反応部４及び給水予熱器５の左端部までの間には改質器左側面断熱材８ｇが配置される。改質器右側面外周から、蒸発器２、予熱器３及び低温反応部４の右端部までの間には改質器右側面断熱材８ｈが配置される。改質部１左側面と給水予熱器５との間には、改質部左側面断熱材８ｅ’が配置される。改質部１右側面と改質器右側面断熱材８ｈとの間には、改質部右側面断熱材８ｆが配置される。   Between the reformer outer periphery and the evaporator 2, an evaporator outer peripheral heat insulating material 8a is disposed. Between the evaporator 2 and the reforming section 1, an evaporator-reforming section heat insulating material 8b is disposed. Between the reformer 1 and the preheater 3, a reformer-preheater insulation 8c is disposed. Between the preheater 3 and the desulfurizer 4a, a heat insulator 8d between the preheater and the low temperature reaction part is disposed. A reformer left side heat insulating material 8g is arranged from the outer periphery of the left side of the reformer to the left end of the evaporator 2, the preheater 3, the low temperature reaction unit 4, and the feed water preheater 5. A reformer right side heat insulating material 8 h is disposed between the outer periphery of the right side of the reformer and the right end of the evaporator 2, the preheater 3, and the low temperature reaction unit 4. Between the reformer 1 left side and the feed water preheater 5, the reformer left side heat insulating material 8 e ′ is disposed. Between the reforming unit 1 right side surface and the reformer right side heat insulating material 8h, the reforming unit right side heat insulating material 8f is disposed.

第２の実施形態においては、各反応器の温度は第１の実施形態と同様であるが、給水予熱器５については相違がある。改質部１に向かう低温側の温度は第１の実施形態と同様１００℃強である。第１の実施形態では水室内部に位置していた高温側は、第２の実施形態では改質器外周に向かっている。高温側表面温度は内部を流通するバーナ排気ガス温度により、上側にある入口で１５０〜２００℃、下側にある出口で１００℃強である。   In 2nd Embodiment, although the temperature of each reactor is the same as that of 1st Embodiment, there exists a difference about the feed water preheater 5. FIG. The temperature on the low temperature side toward the reforming unit 1 is a little over 100 ° C. as in the first embodiment. In the first embodiment, the high temperature side located in the water chamber is directed to the outer periphery of the reformer in the second embodiment. The high temperature side surface temperature is 150 to 200 ° C. at the upper inlet and slightly higher than 100 ° C. at the lower outlet, depending on the burner exhaust gas temperature circulating inside.

各反応器の温度は第１の実施形態と同様で、改質部１表面が最も高温である。流通する流体が改質部１に供給する蒸発器２と予熱器３を改質部１前後に配置することにより、改質部１からの伝熱を回収しエネルギー効率を上げることができる。また、蒸発器外周断熱材８ａ、蒸発器−改質部間断熱材８ｂ、改質部−予熱器間断熱材８ｃ、予熱器−低温反応部間断熱材８ｄを配置することで、それぞれの反応器を適正な温度に保つことができる。   The temperature of each reactor is the same as in the first embodiment, and the surface of the reforming unit 1 is the hottest. By disposing the evaporator 2 and the preheater 3 that the circulating fluid supplies to the reforming unit 1 before and after the reforming unit 1, the heat transfer from the reforming unit 1 can be recovered and the energy efficiency can be increased. Further, by arranging the evaporator outer peripheral heat insulating material 8a, the evaporator-reforming part heat insulating material 8b, the reforming part-preheater heat insulating material 8c, and the preheater-low temperature reaction part heat insulating material 8d, the respective reactions. The vessel can be kept at the proper temperature.

第２の実施形態における各断熱材の表面温度は第１の実施形態と同様であるが、改質部左側面断熱材８ｅ’については前述の改質部左側面断熱材８ｅと相違がある。右面側表面温度は、第１の実施形態と同様下側が６００〜７００℃、上側が４００〜５００℃になる。左側表面温度は、給水予熱器５低温側表面温度に等しく、１００℃強である。改質部左側面断熱材８ｅ’の厚み方向温度差は、下側が５００〜６００℃、上側が３００〜４００℃である。   The surface temperature of each heat insulating material in the second embodiment is the same as that in the first embodiment, but the modified portion left side heat insulating material 8e 'is different from the above modified portion left side heat insulating material 8e. The right side surface temperature is 600 to 700 ° C. on the lower side and 400 to 500 ° C. on the upper side as in the first embodiment. The left surface temperature is equal to the low-temperature surface temperature of the feed water preheater 5 and is slightly higher than 100 ° C. The temperature difference in the thickness direction of the modified portion left side heat insulating material 8e 'is 500 to 600 ° C on the lower side and 300 to 400 ° C on the upper side.

第２の実施形態における、各断熱材の厚みの相関関係について説明する。   The correlation of the thickness of each heat insulating material in 2nd Embodiment is demonstrated.

まず、改質部１に着目する。改質部１は蒸発器−改質部間断熱材８ｂ、改質部−予熱器間断熱材８ｃ、改質部左側面断熱材８ｅ’、改質部右側面断熱材８ｆで囲まれている。   First, focus on the reforming unit 1. The reforming part 1 is surrounded by an evaporator-reforming part heat insulating material 8b, a reforming part-preheater heat insulating material 8c, a reforming part left side heat insulating material 8e ', and a reforming part right side heat insulating material 8f. .

蒸発器−改質部間断熱材８ｂの厚み方向の温度差は、下側で５００〜６００℃、上側で５０〜３５０℃である。一方、改質部−予熱器間断熱材８ｃの厚み方向温度差は、下側で３００〜５００℃、上側で０〜１００℃である。また、給水予熱器５低温側の表面温度は水の沸点相当の１００℃強で一定であるため、改質部左側面断熱材８ｅ’の厚み方向の温度差は、下側で５００〜６００℃、上側で３００〜４００℃である。   The temperature difference in the thickness direction of the evaporator-reformed portion heat insulating material 8b is 500 to 600 ° C. on the lower side and 50 to 350 ° C. on the upper side. On the other hand, the thickness direction temperature difference of the reforming part-preheater heat insulating material 8c is 300 to 500 ° C on the lower side and 0 to 100 ° C on the upper side. Further, since the surface temperature on the low temperature side of the feed water preheater 5 is a little over 100 ° C. corresponding to the boiling point of water, the temperature difference in the thickness direction of the reforming portion left side heat insulating material 8e ′ is 500 to 600 ° C. on the lower side. The upper side is 300 to 400 ° C.

蒸発器−改質部間断熱材８ｂの温度差は改質部−予熱器間断熱材８ｃに比べて大きく、また、改質部左側面断熱材８ｅ’の温度差は蒸発器−改質部間断熱材８ｂの温度差より大きい。改質部１側の表面温度に大きな相違があると、周方向に応力が発生して耐久性に影響するリスクがあるため、大きな差がないよう設計することが望ましい。従って、蒸発器−改質部間断熱材８ｂの熱抵抗を、改質部−予熱器間断熱材８ｃと同じかより高くし、かつ改質部左側面断熱材８ｅ’の熱抵抗を、蒸発器−改質部間断熱材８ｂの熱抵抗と同じかより高くする必要がある。改質部−予熱器間断熱材８ｃの最小厚みを、蒸発器−改質部間断熱材８ｂの最小厚みと同じかより小さくし、蒸発器−改質部間断熱材８ｂの最小厚みを、改質部左側面断熱材８ｅ’の最小厚みと同じかより小さくすることで、改質部１の表面温度の周方向の差を抑えることができる。   The temperature difference between the evaporator-reformer heat insulating material 8b is larger than that of the reformer-preheater heat insulating material 8c, and the temperature difference between the reformer left side heat insulator 8e 'is the evaporator-reformer. It is larger than the temperature difference of the intermediate heat insulating material 8b. If there is a large difference in the surface temperature on the modified portion 1 side, there is a risk that stress is generated in the circumferential direction and affects the durability, so it is desirable to design so that there is no large difference. Accordingly, the thermal resistance of the evaporator-reformer thermal insulation 8b is made equal to or higher than that of the reformer-preheater thermal insulation 8c, and the thermal resistance of the reformer left side thermal insulation 8e 'is evaporated. It is necessary to make it equal to or higher than the thermal resistance of the heat insulating material 8b between the vessel and the reforming part. The minimum thickness of the reformer-preheater insulation 8c is made equal to or smaller than the minimum thickness of the evaporator-reformer insulation 8b, and the minimum thickness of the evaporator-reformer insulation 8b is By making it the same or smaller than the minimum thickness of the reforming portion left side heat insulating material 8e ′, the difference in the circumferential direction of the surface temperature of the reforming portion 1 can be suppressed.

蒸発器−改質部間断熱材８ｂを通過する改質部１からの伝熱は、蒸発器２の低温側を加熱し、水蒸気の熱として改質部１に戻る。また、改質部−予熱器間断熱材８ｃを通過する伝熱は、予熱器３の高温側を加熱し、予熱器３の低温側への伝熱により改質部１に戻るか、低温シフト反応器第一段４ｂ入口温度を上昇させて反応温度の維持に使用される。また、改質部左側面断熱材８ｅ’を通過する伝熱は、給水予熱器５の低温側を加熱し、水蒸気の熱として改質部１に戻る。一方、改質部右側面断熱材８ｆを通過する改質部１からの伝熱は、改質器右側面断熱材８ｈを通過して改質器外に放熱される。エネルギー効率の上から、改質部右側面断熱材８ｆの熱抵抗が、蒸発器−改質部間断熱材８ｂ、改質部−予熱器間断熱材８ｃ及び改質部左側面断熱材８ｅ’の熱抵抗より大きい必要があり、より厚みが大きい必要がある。   The heat transfer from the reforming unit 1 passing through the evaporator-reforming unit heat insulating material 8b heats the low temperature side of the evaporator 2 and returns to the reforming unit 1 as heat of steam. Further, the heat transfer passing through the reformer-preheater insulation 8c heats the high temperature side of the preheater 3 and returns to the reformer 1 by heat transfer to the low temperature side of the preheater 3, or a low temperature shift. It is used to maintain the reaction temperature by raising the inlet temperature of the reactor first stage 4b. Moreover, the heat transfer which passes through the reforming part left side heat insulating material 8e 'heats the low temperature side of the feed water preheater 5 and returns to the reforming part 1 as heat of steam. On the other hand, the heat transfer from the reforming unit 1 passing through the reforming unit right side heat insulating material 8f passes through the reformer right side heat insulating material 8h and is radiated to the outside of the reformer. From the viewpoint of energy efficiency, the thermal resistance of the reforming unit right side heat insulating material 8f is determined by the evaporator-reforming unit heat insulating material 8b, the reforming unit-preheater heat insulating material 8c, and the reforming unit left side heat insulating material 8e '. Need to be greater than the thermal resistance, and the thickness needs to be greater.

図３から明らかなように、改質部左側面断熱材８ｅ’の厚みと改質部右側面断熱材８ｆの厚みの和は、蒸発器２及び予熱器３の左右方向幅から改質部１の最大直径と給水予熱器５の左右方向幅を引いた値に等しい。また、改質部左側面断熱材８ｅ’の厚みは、蒸発器−改質部間断熱材８ｂもしくは改質部−予熱器間断熱材８ｃと等しいかより大きい。これらの関係を定式化すると、次のようになる。   As apparent from FIG. 3, the sum of the thickness of the reforming portion left side heat insulating material 8 e ′ and the thickness of the reforming portion right side heat insulating material 8 f is determined from the lateral width of the evaporator 2 and the preheater 3. Is equal to a value obtained by subtracting the left-right direction width of the feed water preheater 5. The thickness of the reforming portion left side heat insulating material 8e 'is equal to or larger than the evaporator-reforming portion heat insulating material 8b or the reforming portion-preheater heat insulating material 8c. These relationships are formulated as follows.

（改質部右側面断熱材８ｆ厚み）
＝（蒸発器２及び予熱器３の左右方向幅）−（改質部１の最大直径）−（給水予熱器５の左右の幅）−（改質部左側面断熱材８ｅ’厚み）
＞（改質部左側面断熱材８ｅ’厚み）
≧ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−予熱器間断熱材８ｃ厚み））
更にこれを変形して整理すると、次のようになる。 (Modified section right side insulation 8f thickness)
= (Width in the left-right direction of the evaporator 2 and the preheater 3)-(Maximum diameter of the reforming unit 1)-(Width in the left and right of the feed water preheater 5)-(Thickness of the heat insulating material 8e 'on the left side of the reforming unit)
> (Modified part left side heat insulating material 8e 'thickness)
≧ max ((thickness of the heat insulating material between the evaporator and the reforming part 8b), (thickness of the heat insulating material between the reforming part and the preheater 8c))
Furthermore, when this is transformed and arranged, it becomes as follows.

（蒸発器２及び予熱器３の左右方向幅）
≧（改質部１の最大直径）＋ （給水予熱器５の左右の幅）＋２×（改質部左側面断熱材８ｅ’厚み）
＞（改質部１の最大直径）＋２×（改質部左側面断熱材８ｅ’厚み）
≧（改質部１の最大直径）＋２×ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−予熱器間断熱材８ｃ厚み））
すなわち、第１の実施形態と同様、蒸発器２及び予熱器３の左右方向幅が、改質部１の最大直径に、蒸発器−改質部間断熱材８ｂ厚みもしくは改質部−予熱器間断熱材８ｃ厚みのいずれか大きい方の２倍を加えた値より大きいことが、改質部１から改質器外への放熱を抑えるための必要条件である。 (Width in the left-right direction of the evaporator 2 and the preheater 3)
≧ (maximum diameter of reforming section 1) + (left and right width of feed water preheater 5) + 2 × (reforming section left side heat insulating material 8e ′ thickness)
> (Maximum diameter of the reforming section 1) + 2 × (thickness of the reforming section left side heat insulating material 8e ′)
≧ (maximum diameter of the reforming section 1) + 2 × max ((thickness of the heat insulating material 8b between the evaporator and the reforming section), (thickness of the heat insulating material 8b between the reforming section and the preheater))
That is, as in the first embodiment, the width in the left-right direction of the evaporator 2 and the preheater 3 is equal to the maximum diameter of the reformer 1, the thickness of the evaporator-reformer insulation 8 b or the reformer-preheater. It is a necessary condition for suppressing heat radiation from the reforming unit 1 to the outside of the reformer to be larger than the value obtained by adding twice the larger one of the thicknesses of the intermediate heat insulating material 8c.

蒸発器２の前後に関する断熱材厚みの相関、及び予熱器３の前後に関する断熱材厚みの相関関係は、第１の実施形態に同じである。   The correlation of the heat insulating material thickness before and after the evaporator 2 and the correlation of the heat insulating material thickness before and after the preheater 3 are the same as those in the first embodiment.

第２の実施形態によれば、例えば改質部１を矩形の蒸発器２と予熱器３で挟みこみ、かつ改質部１の蒸発器２にも予熱器３にも面しない位置に給水予熱器５を配する構成において次のような利点がある。第一に、給水予熱器５の左右方向厚みを適切な値に抑えれば、蒸発器２及び予熱器３の左右幅の範囲で改質部左側面断熱材８ｅ’及び改質部右側面断熱材８ｆの厚みを確保できるので、改質器外周の左右幅は蒸発器２及び予熱器３の幅で決まり、改質部１の断熱が原因で改質器全体の左右幅が増大することがない。本構成にかかる給水予熱器５は流速を上げて伝熱を促進するため、高温側のバーナ排気ガス流路、低温側の改質水流路とも左右方向の幅を狭めて製作することが通例なので、上記の構成に適合する。第二に改質部左側面断熱材８ｅ’及び改質部右側面断熱材８ｆの厚みを確保しても、蒸発器−改質部間断熱材８ｂ及び改質部−予熱器間断熱材８ｃの厚み増大につながらないため、改質部１の断熱が原因で改質器全体の前後長さが増大することはない。上記のような構成により、必要な断熱を確保しながら改質器全体の表面積増大を抑えて改質器外表面からの放熱を抑制し、エネルギー効率を増大させることができる。   According to the second embodiment, for example, the reforming unit 1 is sandwiched between the rectangular evaporator 2 and the preheater 3 and the feed water is preheated at a position that does not face the evaporator 2 and the preheater 3 of the reforming unit 1. The configuration in which the container 5 is arranged has the following advantages. First, if the thickness in the left-right direction of the feed water preheater 5 is suppressed to an appropriate value, the reformer left side heat insulating material 8e 'and the reformer right side heat insulation are within the range of the left and right widths of the evaporator 2 and the preheater 3. Since the thickness of the material 8f can be secured, the left and right width of the reformer outer periphery is determined by the width of the evaporator 2 and the preheater 3, and the right and left width of the entire reformer increases due to the heat insulation of the reforming section 1. Absent. Since the feed water preheater 5 according to this configuration increases the flow rate and promotes heat transfer, it is customary to manufacture both the high-temperature side burner exhaust gas channel and the low-temperature side reformed water channel with a narrow width in the left-right direction. Conforms to the above configuration. Secondly, even if the thickness of the reforming part left side heat insulating material 8e ′ and the reforming part right side heat insulating material 8f is secured, the evaporator-reforming part heat insulating material 8b and the reforming part-preheater heat insulating material 8c. Therefore, the length of the entire reformer does not increase due to the heat insulation of the reforming section 1. With the configuration as described above, it is possible to suppress an increase in the surface area of the entire reformer while suppressing necessary heat insulation, suppress heat release from the outer surface of the reformer, and increase energy efficiency.

（第３の実施形態）
第３の実施形態に係る燃料電池発電装置に備えられる改質器について図４及び図５を参照して説明する。なお、前述の各実施形態と共通する要素には同一の符号を付し、重複する説明を省略する。 (Third embodiment)
A reformer provided in a fuel cell power generator according to a third embodiment will be described with reference to FIGS. 4 and 5. In addition, the same code | symbol is attached | subjected to the element which is common in each above-mentioned embodiment, and the overlapping description is abbreviate | omitted.

図４は、第３の実施形態に係る改質器を横から見た場合の概略構成を示す側面図である。図５は、同実施形態に係る改質器を上から見た場合の概略構成を示す上面図である。   FIG. 4 is a side view showing a schematic configuration when the reformer according to the third embodiment is viewed from the side. FIG. 5 is a top view showing a schematic configuration when the reformer according to the embodiment is viewed from above.

第３の実施形態は、第１の実施形態と比べ、高温シフト反応器９が更に配置されている点が異なる。   The third embodiment is different from the first embodiment in that a high temperature shift reactor 9 is further arranged.

矩形の蒸発器２は、改質器の最も前面側に配置され、高温側が改質器外周に向かう面に配され、低温側が反対側に配される。その後面側に円筒形の改質部１が配置され、その後面側に高温シフト反応器９が配置される。高温シフト反応器９で発生する水性ガスシフト反応は低温ほど平衡上有利だが、反応速度は高温ほど速い。３００℃以下で動作する低温シフト反応器第一段４ｂ及び低温シフト反応器第二段４ｃの上流に高温シフト反応器９を設置することで、シフト反応器全体の体積を減らす設計が可能である。   The rectangular evaporator 2 is disposed on the forefront side of the reformer, the high temperature side is disposed on the surface facing the reformer outer periphery, and the low temperature side is disposed on the opposite side. A cylindrical reforming section 1 is disposed on the rear surface side, and a high temperature shift reactor 9 is disposed on the rear surface side. The water gas shift reaction generated in the high temperature shift reactor 9 is more advantageous for equilibrium at lower temperatures, but the reaction rate is faster at higher temperatures. By installing the high temperature shift reactor 9 upstream of the low temperature shift reactor first stage 4b and the low temperature shift reactor second stage 4c operating at 300 ° C. or lower, it is possible to design to reduce the volume of the entire shift reactor. .

高温シフト反応器９の後面側に矩形の予熱器３が、高温側が高温シフト反応器９に配され低温側が反対側に配されるよう配置される。予熱器３の後面側に低温反応部４が配置される。低温反応部４の内部では、脱硫器４ａが最も前面側に配置され、その後面側に低温シフト反応器第一段４ｂ、低温シフト反応冷却器４ｅ、低温シフト反応器第二段４ｃ、ＰＲＯＸ４ｄがこの順に配置されている。これらの下方に給水予熱器５が配置される。   A rectangular preheater 3 is disposed on the rear surface side of the high temperature shift reactor 9 such that the high temperature side is disposed on the high temperature shift reactor 9 and the low temperature side is disposed on the opposite side. A low temperature reaction part 4 is arranged on the rear side of the preheater 3. Inside the low-temperature reaction section 4, the desulfurizer 4a is disposed on the most front side, and on the rear side thereof, the low-temperature shift reactor first stage 4b, the low-temperature shift reaction cooler 4e, the low-temperature shift reactor second stage 4c, and the PROX 4d. Arranged in this order. Below these, the feed water preheater 5 is arranged.

改質器外周と蒸発器２との間には、蒸発器外周断熱材８ａが配置される。蒸発器２と改質部１との間には蒸発器−改質部間断熱材８ｂが配置される。改質部１と高温シフト反応器９との間には改質部−高温シフト反応器間断熱材８ｊが配置される。高温シフト反応器９と予熱器３との間には高温シフト反応器−予熱器間断熱材８ｋが配置される。予熱器３と脱硫器４ａとの間には予熱器−低温反応部間断熱材８ｄが配置される。改質器左側面外周から、蒸発器２、高温シフト反応器９、予熱器３及び低温反応部４の左端部までの間には改質器左側面断熱材８ｇが配置される。改質器右側面外周から、蒸発器２、高温シフト反応器９、予熱器３及び低温反応部４の右端部までの間には改質器右側面断熱材８ｈが配置される。改質部１左側面と改質器左側面断熱材８ｇとの間には、改質部左側面断熱材８ｅが配置される。改質部１右側面と改質器右側面断熱材８ｈとの間には、改質部右側面断熱材８ｆが配置される。   Between the reformer outer periphery and the evaporator 2, an evaporator outer peripheral heat insulating material 8a is disposed. Between the evaporator 2 and the reforming section 1, an evaporator-reforming section heat insulating material 8b is disposed. Between the reforming unit 1 and the high temperature shift reactor 9, a reforming unit-high temperature shift reactor heat insulating material 8j is disposed. Between the high temperature shift reactor 9 and the preheater 3, a high temperature shift reactor-preheater insulating material 8k is disposed. Between the preheater 3 and the desulfurizer 4a, a heat insulator 8d between the preheater and the low temperature reaction part is disposed. A reformer left side heat insulating material 8g is disposed between the outer periphery of the left side of the reformer and the left end of the evaporator 2, the high temperature shift reactor 9, the preheater 3, and the low temperature reaction unit 4. A reformer right side heat insulating material 8 h is disposed between the outer periphery of the right side of the reformer and the right end of the evaporator 2, the high temperature shift reactor 9, the preheater 3, and the low temperature reaction unit 4. Between the reformer 1 left side and the reformer left side heat insulating material 8g, the reformer left side heat insulating material 8e is disposed. Between the reforming unit 1 right side surface and the reformer right side heat insulating material 8h, the reforming unit right side heat insulating material 8f is disposed.

図４に示されるように、改質燃料６ａは脱硫器４ａを通過した後、蒸発器２で発生した水蒸気と混合され、予熱器３の低温側に導入される。予熱器３に導入された改質燃料６ａは、昇温された後、改質部１の改質反応部１ｃに導入され、水素リッチガスに変換される。再生室１ｄを通じて改質部１から導出された水素リッチガスは高温シフト反応器９に導入され、水性ガスシフト反応により燃料電池に有害なＣＯを減じ、燃料電池の燃料であるＨ２を増やす。高温シフト反応器９から導出された水素リッチガスは予熱器３の高温側に導入され、改質燃料６ａと水蒸気の混合ガスを予熱する。その後低温シフト反応器第一段４ｂに導入され、続いて低温シフト反応器第二段４ｃに導入され、低温シフト反応冷却器４ｅに冷却されながら、更にＣＯを減じＨ２を増加させた後、シフト反応器出口ガス６ｃとして導出される。シフト反応器出口ガス６ｃはＰＲＯＸ空気６ｄと混合された後、ＰＲＯＸ入口ガス６ｅとしてＰＲＯＸ４ｄに導入され、選択酸化反応により燃料電池に有害なＣＯを１０ｐｐｍ以下まで減じ、改質器出口ガス６ｆとして導出する。   As shown in FIG. 4, the reformed fuel 6 a passes through the desulfurizer 4 a, is mixed with water vapor generated in the evaporator 2, and is introduced to the low temperature side of the preheater 3. After the temperature of the reformed fuel 6a introduced into the preheater 3 is raised, the reformed fuel 6a is introduced into the reforming reaction section 1c of the reforming section 1 and converted into hydrogen-rich gas. The hydrogen rich gas led out from the reforming unit 1 through the regeneration chamber 1d is introduced into the high temperature shift reactor 9, and CO that is harmful to the fuel cell is reduced by the water gas shift reaction, and H2 that is fuel of the fuel cell is increased. The hydrogen rich gas derived from the high temperature shift reactor 9 is introduced to the high temperature side of the preheater 3 to preheat the mixed gas of the reformed fuel 6a and water vapor. Then, it is introduced into the first stage 4b of the low temperature shift reactor, subsequently introduced into the second stage 4c of the low temperature shift reactor, and further cooled by the low temperature shift reaction cooler 4e, further reducing CO and increasing H2, then the shift. It is derived as reactor outlet gas 6c. After the shift reactor outlet gas 6c is mixed with the PROX air 6d, it is introduced into the PROX 4d as the PROX inlet gas 6e, and CO that is harmful to the fuel cell is reduced to 10 ppm or less by the selective oxidation reaction, and is derived as the reformer outlet gas 6f. To do.

一方、改質水６ｂは給水予熱器５の低温側に導入され、バーナ排ガスとの熱交換により予熱された後、蒸発器２の低温側に導入され、蒸発器２での熱交換により過熱水蒸気となった後、脱硫器４ａを通過した改質燃料６ａと混合される。   On the other hand, the reformed water 6b is introduced to the low temperature side of the feed water preheater 5, preheated by heat exchange with the burner exhaust gas, and then introduced to the low temperature side of the evaporator 2, and superheated steam is obtained by heat exchange in the evaporator 2. After that, it is mixed with the reformed fuel 6a that has passed through the desulfurizer 4a.

バーナ空気７ａおよびバーナ燃料７ｂはバーナ１ａに導入され、バーナ燃焼空間１ｂにて燃焼される。バーナ排気ガスは改質部１から導出された後、蒸発器２に導入されて水蒸気発生に利用される。蒸発器２から導出されたバーナ排気ガスは低温シフト反応冷却器４ｅを通過した後、給水予熱器５の高温側に導入されて改質水６ｂの予熱に使われた後、改質器バーナ出口ガス７ｃとして改質器外に排出される。   Burner air 7a and burner fuel 7b are introduced into burner 1a and burned in burner combustion space 1b. The burner exhaust gas is led out from the reforming unit 1 and then introduced into the evaporator 2 to be used for steam generation. After the burner exhaust gas derived from the evaporator 2 passes through the low temperature shift reaction cooler 4e, it is introduced to the high temperature side of the feed water preheater 5 and used for preheating the reforming water 6b, and then the outlet of the reformer burner. It is discharged out of the reformer as gas 7c.

次に、各流体の流れに沿って反応器の温度について説明する。
まず、改質燃料６ａの流れに沿って説明すると、脱硫器４ａは反応のため２００〜３００℃の温度を維持することが必要であり、これを予熱器３及び低温シフト反応器第一段４ｂからの伝熱により維持している。脱硫器４ａの下流に位置する予熱器３の低温側は、脱硫器４ａからの改質燃料と蒸発器２からの水蒸気が混合されて導入される。改質燃料は２００〜３００℃であり、水蒸気は１５０〜３５０℃なので、予熱器３の入口温度は１５０〜３５０℃である。出口は改質部１での改質反応が開始する３５０〜４５０℃にまで昇温されて、改質反応部１ｃ内の改質触媒層に導入される。入口では予熱器３低温側出口と同様３５０〜４５０℃だが、出口では改質反応に好適な６００〜７００℃にまで昇温され、再生室１ｄに導入される。再生室１ｄを通過することで４００〜５００℃でまで降温された後、高温シフト反応器９に導入される。高温シフト反応器９では水性ガスシフト反応による発熱で４００〜５００℃の温度を保った後、予熱器３の高温側に導入され、低温側と熱交換し、２００〜３００℃に降温する。 Next, the temperature of the reactor will be described along the flow of each fluid.
First, to explain along the flow of the reformed fuel 6a, it is necessary for the desulfurizer 4a to maintain a temperature of 200 to 300 ° C. for the reaction, and this is the preheater 3 and the low temperature shift reactor first stage 4b. It is maintained by heat transfer from. On the low temperature side of the preheater 3 located downstream of the desulfurizer 4a, the reformed fuel from the desulfurizer 4a and the steam from the evaporator 2 are mixed and introduced. Since the reformed fuel is 200 to 300 ° C. and the steam is 150 to 350 ° C., the inlet temperature of the preheater 3 is 150 to 350 ° C. The outlet is heated to 350 to 450 ° C. at which the reforming reaction in the reforming section 1 starts, and is introduced into the reforming catalyst layer in the reforming reaction section 1c. Although it is 350-450 degreeC similarly to the preheater 3 low temperature side exit at an entrance, it is heated up to 600-700 degreeC suitable for a reforming reaction at an exit, and is introduce | transduced into the regeneration chamber 1d. The temperature is lowered to 400 to 500 ° C. by passing through the regeneration chamber 1 d and then introduced into the high temperature shift reactor 9. In the high temperature shift reactor 9, the temperature of 400 to 500 ° C. is maintained by heat generated by the water gas shift reaction, and then introduced into the high temperature side of the preheater 3, heat exchange with the low temperature side is performed, and the temperature is lowered to 200 to 300 ° C.

予熱器３の高温側から導出された２００〜３００℃の水素リッチガスは、低温シフト反応器第一段４ｂに導入される。低温シフト反応器第一段４ｂでは水性ガスシフト反応による発熱があるが、隣接する脱硫器４ａ及び低温シフト反応冷却器４ｅへの伝熱により、出口温度は２００〜３００℃に保たれる。   The hydrogen rich gas of 200 to 300 ° C. derived from the high temperature side of the preheater 3 is introduced into the first stage 4b of the low temperature shift reactor. In the first stage 4b of the low temperature shift reactor, heat is generated by the water gas shift reaction, but the outlet temperature is maintained at 200 to 300 ° C. by heat transfer to the adjacent desulfurizer 4a and the low temperature shift reaction cooler 4e.

低温シフト反応器第一段４ｂから導出された２００〜３００℃の水素リッチガスは、低温シフト反応器第二段４ｃに導入される。低温シフト反応器第二段４ｃでは水性ガスシフト反応による発熱があるが、隣接する低温シフト反応冷却器４ｅ及びＰＲＯＸ４ｄへの伝熱により、出口温度は１００〜２５０℃に降温する。   The hydrogen rich gas at 200 to 300 ° C. derived from the first stage 4b of the low temperature shift reactor is introduced into the second stage 4c of the low temperature shift reactor. In the low temperature shift reactor second stage 4c, heat is generated by the water gas shift reaction, but the outlet temperature is lowered to 100 to 250 ° C. by heat transfer to the adjacent low temperature shift reaction cooler 4e and PROX 4d.

低温シフト反応器第二段４ｃから導出された１００〜２５０℃のシフト反応器出口ガス６ｃは、図示しない冷却器で１００℃以下に冷却された後、ＰＲＯＸ空気６ｄと混合され、ＰＲＯＸ入口ガス６ｅとしてＰＲＯＸ４ｄに導入される。ＰＲＯＸ４ｄ入口でのガス温度は１００℃以下であり、出口では選択酸化反応の発熱により１００〜２００℃に昇温された後、改質器出口ガス６ｆとして導出される。   The shift reactor outlet gas 6c at 100 to 250 ° C. derived from the second stage 4c of the low temperature shift reactor is cooled to 100 ° C. or lower by a cooler (not shown), and then mixed with the PROX air 6d to produce the PROX inlet gas 6e. Is introduced into PROX4d. The gas temperature at the inlet of the PROX 4d is 100 ° C. or lower, and at the outlet, the temperature is raised to 100 to 200 ° C. due to the heat generated by the selective oxidation reaction, and is then derived as the reformer outlet gas 6f.

改質水６ｂの流れに沿って説明すると、給水予熱器５の低温側入口の温度は給水される水の温度だが、多くの場合給水予熱器５内で沸騰が始まるので、出口では流路の圧力に対応する沸点まで温度が上昇し、１００℃強に達する。続いて蒸発器２に導入されると、入口から途中までは沸騰のため１００℃強一定だが、沸騰が完了し過熱され始めると温度が上昇する。ここで、水蒸気が十分過熱されず、二相流のまま蒸発器２から導出されると、脱硫器４ａに水が逆流して脱硫器４ａの機能を阻害する可能性がある。一方で、水蒸気の温度が高いことは、昇温のため多くのバーナ燃料４ｂを投入していることを意味し、エネルギー効率の上で望ましくない。このため、改質器の運転条件を適切に設定することで、過熱された水蒸気の温度が１５０〜３５０℃の間になるよう調整することが望ましい。   Explaining along the flow of the reforming water 6b, the temperature at the low temperature side inlet of the feed water preheater 5 is the temperature of the water to be fed, but in many cases, boiling starts in the feed water preheater 5, so that the flow path at the outlet is The temperature rises to the boiling point corresponding to the pressure and reaches over 100 ° C. Subsequently, when introduced into the evaporator 2, the temperature from the inlet to the middle is a little over 100 ° C. due to boiling, but the temperature rises when boiling is completed and overheating begins. Here, if the water vapor is not sufficiently heated and is led out from the evaporator 2 in a two-phase flow, water may flow backward to the desulfurizer 4a, thereby hindering the function of the desulfurizer 4a. On the other hand, the high temperature of water vapor means that a large amount of burner fuel 4b is introduced for temperature rise, which is not desirable in terms of energy efficiency. For this reason, it is desirable to adjust the temperature of the superheated steam to be between 150 to 350 ° C. by appropriately setting the operating conditions of the reformer.

次に、バーナ排気ガスの流れに沿って温度を説明する。バーナ燃焼空間１ｂで燃焼されたバーナ排気ガスは、改質触媒層との熱交換により降温し、改質部１出口では３００〜５００℃になる。改質部１から導出されたバーナ排気ガスは、蒸発器２の高温側に導入され、改質水と熱交換し沸騰させることにより１００℃強にまで冷却される。蒸発器２の高温側から導出された１００℃強のバーナ排気ガスは、低温シフト反応冷却器４ｅに導入され、低温シフト反応器第一段４ｂ及び低温シフト反応器第二段４ｃとの熱交換により１５０〜２００℃にまで昇温される。低温シフト反応冷却器４ｅから導出された１５０〜２００℃のバーナ排気ガスは、給水予熱器５の高温側に導入され、改質水と熱交換し沸騰を開始させることにより１００℃強まで冷却された後、改質器バーナ出口ガス７ｃとして導出される。   Next, the temperature will be described along the flow of the burner exhaust gas. The burner exhaust gas burned in the burner combustion space 1b is cooled by heat exchange with the reforming catalyst layer, and reaches 300 to 500 ° C. at the reforming section 1 outlet. The burner exhaust gas led out from the reforming unit 1 is introduced to the high temperature side of the evaporator 2 and is cooled to a little over 100 ° C. by exchanging heat with the reforming water and boiling. Burner exhaust gas of slightly over 100 ° C derived from the high temperature side of the evaporator 2 is introduced into the low temperature shift reaction cooler 4e, and heat exchange with the low temperature shift reactor first stage 4b and the low temperature shift reactor second stage 4c. The temperature is raised to 150 to 200 ° C. The 150-200 ° C. burner exhaust gas derived from the low temperature shift reaction cooler 4 e is introduced to the high temperature side of the feed water preheater 5 and is cooled to over 100 ° C. by exchanging heat with the reforming water and starting boiling. After that, the reformer burner outlet gas 7c is led out.

次に、各反応器の表面温度を説明する。各反応器の表面温度は内部を流通する流体の温度に相当している。   Next, the surface temperature of each reactor will be described. The surface temperature of each reactor corresponds to the temperature of the fluid flowing inside.

矩形である蒸発器２の、蒸発器外周断熱材８ａに面する高温側の表面温度は、バーナ排気ガスの入口が３００〜５００℃、出口が１００℃強である。蒸発器２の、蒸発器−改質部間断熱材８ｂに面する低温側の表面温度は、改質水の入口が１００℃強、出口が１５０〜３５０℃である。   The surface temperature of the rectangular evaporator 2 on the high temperature side facing the evaporator outer peripheral heat insulating material 8a is 300 to 500 ° C. at the burner exhaust gas inlet and slightly over 100 ° C. at the outlet. The surface temperature of the evaporator 2 on the low temperature side facing the evaporator-reformer heat insulating material 8b is slightly over 100 ° C. at the reforming water inlet and 150-350 ° C. at the outlet.

円筒形である改質部１の、蒸発器−改質部間断熱材８ｂに接する面の表面温度は、再生室１ｄのガス温度に相当する。従って、再生室１ｄ入口近傍の表面が６００〜７００℃、出口近傍の表面が４００〜５００℃になる。改質部−高温シフト反応器間断熱材８ｊに接する面の表面温度も同様に、再生室１ｄ入口近傍の表面が６００〜７００℃、出口近傍の表面が４００〜５００℃になる。   The surface temperature of the surface of the reforming section 1 that is cylindrical and in contact with the evaporator-reforming section heat insulating material 8b corresponds to the gas temperature of the regeneration chamber 1d. Accordingly, the surface near the inlet of the regeneration chamber 1d is 600 to 700 ° C., and the surface near the outlet is 400 to 500 ° C. Similarly, the surface temperature of the surface in contact with the reforming part-high temperature shift inter-reactor heat insulating material 8j is 600 to 700 ° C. near the inlet of the regeneration chamber 1d and 400 to 500 ° C. near the outlet.

矩形である高温シフト反応器９の表面は、改質部−高温シフト反応器間断熱材８ｊに向かう面と高温シフト反応器−予熱器間断熱材８ｋに向かう面のいずれも、内部を流通するガスの温度相当の４００〜５００℃である。   The surface of the rectangular high temperature shift reactor 9 circulates inside both the surface facing the reforming part-high temperature shift reactor heat insulating material 8j and the surface facing the high temperature shift reactor-preheater heat insulating material 8k. It is 400-500 degreeC equivalent to the temperature of gas.

矩形である予熱器３の、高温シフト反応器−予熱器間断熱材８ｋに面する側は、高温側である。従って、水素リッチガスの入口側が４００〜５００℃、出口側が２００〜３００℃である。予熱器３の、予熱器−低温反応部間断熱材８ｄに面する側は、低温側である。従って、表面温度は、改質燃料と水蒸気の混合ガスの入口側が１５０〜３５０℃、出口側が３５０〜４５０℃である。   The side of the rectangular preheater 3 facing the high-temperature shift reactor-preheater insulating material 8k is the high temperature side. Accordingly, the inlet side of the hydrogen rich gas is 400 to 500 ° C., and the outlet side is 200 to 300 ° C. The side of the preheater 3 facing the preheater-low temperature reaction part heat insulating material 8d is the low temperature side. Therefore, the surface temperature is 150 to 350 ° C. on the inlet side and 350 to 450 ° C. on the outlet side of the mixed gas of reformed fuel and steam.

矩形である脱硫器４ａの、予熱器−低温反応部間断熱材８ｄに面する側の表面温度は、内部のガス温度と同様２００〜３００℃である。   The surface temperature of the rectangular desulfurizer 4a facing the preheater-low temperature reaction part heat insulating material 8d is 200 to 300 ° C., similar to the internal gas temperature.

矩形である低温シフト反応器第一段４ｂの表面温度は、内部のガス温度と同様、水素リッチガスの入出口とも２００〜３００℃である。   The surface temperature of the rectangular low-temperature shift reactor first stage 4b is 200 to 300 ° C. at both the inlet and outlet of the hydrogen-rich gas, similarly to the internal gas temperature.

矩形である低温シフト反応器第二段４ｃの表面温度は、内部のガス温度と同様、水素リッチガスの入口側が２００〜３００℃、出口側が１００〜２５０℃である。   The surface temperature of the rectangular low-temperature shift reactor second stage 4c is 200 to 300 ° C. on the inlet side of the hydrogen-rich gas and 100 to 250 ° C. on the outlet side, like the internal gas temperature.

矩形であるＰＲＯＸ４ｄの表面温度は、内部のガス温度と同様、水素リッチガスの入口側が１００℃以下、出口側が１００〜２００℃である。   The surface temperature of the rectangular PROX 4d is 100 ° C. or lower on the inlet side of the hydrogen-rich gas and 100 to 200 ° C. on the outlet side, similarly to the internal gas temperature.

給水予熱器５は、高温側であるバーナ排気ガス流路を、低温側である改質水の水室が囲う構成である。このため、表面温度は沸騰している改質水温度と同様、１００℃強である。   The feed water preheater 5 has a configuration in which a burner exhaust gas passage on the high temperature side is surrounded by a water chamber for reforming water on the low temperature side. For this reason, the surface temperature is slightly over 100 ° C., similar to the boiling reforming water temperature.

各反応器の温度は上記の通りであり、改質部１表面が最も高温である。流通する流体が改質部１に供給する蒸発器２と予熱器３を、改質部１及びその直下流にあたる高温シフト反応器９の前後に配置することにより、改質部１からの伝熱を回収しエネルギー効率を上げることができる。また、蒸発器外周断熱材８ａ、蒸発器−改質部間断熱材８ｂ、改質部−高温シフト反応器間断熱材８ｊ、予熱器−低温反応部間断熱材８ｄを配置することで、それぞれの反応器を適正な温度に保つことができる。   The temperature of each reactor is as described above, and the surface of the reforming unit 1 is the hottest. Heat transfer from the reforming unit 1 is performed by arranging the evaporator 2 and the preheater 3 supplied to the reforming unit 1 before and after the reforming unit 1 and the high-temperature shift reactor 9 immediately downstream thereof. Can be recovered to increase energy efficiency. Further, by disposing the evaporator outer peripheral heat insulating material 8a, the evaporator-reforming section heat insulating material 8b, the reforming section-high temperature shift inter-reactor heat insulating material 8j, and the preheater-low temperature reaction section heat insulating material 8d, respectively. The reactor can be kept at the proper temperature.

次に、各断熱材の表面温度を説明する。断熱材の表面温度は、隣接する反応器の表面温度に相当する。   Next, the surface temperature of each heat insulating material will be described. The surface temperature of the heat insulating material corresponds to the surface temperature of the adjacent reactor.

蒸発器外周断熱材８ａの表面温度は第１の実施形態と同様であり、前面側表面温度は約５０℃、後面側表面温度は入口が３００〜５００℃、出口が１００℃強である。従って、蒸発器外周断熱材８ａの厚み方向の温度差は、改質器外表面温度を５０℃としてバーナ排気の入口が２５０〜４５０℃、出口が約５０℃になる。   The surface temperature of the evaporator outer peripheral heat insulating material 8a is the same as that of the first embodiment, the front surface temperature is about 50 ° C., the rear surface temperature is 300 to 500 ° C. at the inlet, and slightly over 100 ° C. at the outlet. Therefore, the temperature difference in the thickness direction of the evaporator outer peripheral heat insulating material 8a is such that the reformer outer surface temperature is 50 ° C., the burner exhaust inlet is 250 to 450 ° C., and the outlet is about 50 ° C.

蒸発器−改質部間断熱材８ｂの表面温度は第１の実施形態と同様であり、前面側下側が１００℃強、上側が１５０〜３５０℃である。後面側表面温度は、下側が６００〜７００℃、上側が４００〜５００℃になる。蒸発器−改質部間断熱材８ｂの厚み方向温度差は、下側で５００〜６００℃、上側で５０〜３５０℃である。   The surface temperature of the evaporator-reformed section heat insulating material 8b is the same as that of the first embodiment, and the lower side on the front side is slightly over 100 ° C and the upper side is 150-350 ° C. The rear surface temperature is 600 to 700 ° C. on the lower side and 400 to 500 ° C. on the upper side. The temperature difference in the thickness direction of the evaporator-reformed portion heat insulating material 8b is 500 to 600 ° C. on the lower side and 50 to 350 ° C. on the upper side.

改質部−高温シフト反応器間断熱材８ｊの前面側表面温度は改質部１表面温度と同様であり、下側が６００〜７００℃、上側が４００〜５００℃になる。後面側表面温度は高温シフト反応器９表面温度と同様であり、下側上側とも４００〜５００℃である。改質部−高温シフト反応器間断熱材８ｊの厚み方向温度差は、下側で１００〜３００℃、上側で０〜１００℃である。   The front side surface temperature of the reforming part-high temperature shift reactor heat insulating material 8j is the same as the reforming part 1 surface temperature, and the lower side is 600 to 700 ° C and the upper side is 400 to 500 ° C. The rear surface temperature is the same as the high temperature shift reactor 9 surface temperature, and the lower upper surface is 400 to 500 ° C. The temperature difference in the thickness direction of the reforming part-high temperature shift reactor heat insulating material 8j is 100 to 300 ° C. on the lower side and 0 to 100 ° C. on the upper side.

高温シフト反応器−予熱器間断熱材８ｋの前面側表面温度は高温シフト反応器９表面温度と同様であり、下側上側とも４００〜５００℃である。後面側表面温度は、予熱器３高温側の表面温度と同様であり、上側にあたる入口側が４００〜５００℃、下側にあたる出口側が２００〜３００℃である。高温シフト反応器−予熱器間断熱材８ｋの厚み方向温度差は、下側で１００〜３００℃、上側で０〜１００℃である。   The front surface temperature of the high temperature shift reactor-preheater insulating material 8k is the same as the surface temperature of the high temperature shift reactor 9, and the lower upper side is 400 to 500 ° C. The rear side surface temperature is the same as the surface temperature of the preheater 3 on the high temperature side, the inlet side corresponding to the upper side is 400 to 500 ° C., and the outlet side corresponding to the lower side is 200 to 300 ° C. The temperature difference in the thickness direction of the high-temperature shift reactor-preheater insulating material 8k is 100 to 300 ° C on the lower side and 0 to 100 ° C on the upper side.

予熱器−低温反応部間断熱材８ｄの前面側表面温度は、予熱器３低温側の表面温度と同様であり、上側に位置する入口が１５０〜３５０℃、同じく上側に位置する出口が３５０〜４５０℃である。後面側表面温度は、脱硫器４ａの表面温度と同様であり、２００〜３００℃である。従って、予熱器−低温反応部間断熱材８ｄの厚み方向温度差は、予熱器３側を高温として−５０〜２５０℃である。   The surface temperature of the front surface of the preheater-low temperature reaction section insulating material 8d is the same as the surface temperature of the preheater 3 on the low temperature side, the upper inlet is 150-350 ° C, and the upper outlet is 350- 450 ° C. The rear surface temperature is the same as the surface temperature of the desulfurizer 4a and is 200 to 300 ° C. Therefore, the temperature difference in the thickness direction of the preheater-low temperature reaction part heat insulating material 8d is −50 to 250 ° C. with the preheater 3 side at a high temperature.

改質器左側面断熱材８ｇの右側面表面温度は各反応器により相違し、最高は高温シフト反応器９及び予熱器３高温側の上部４００〜５００℃、最低はＰＲＯＸ５入口の１００℃以下である。内部に最大４００℃の温度差があるので、左側面表面温度も場所によって変わるが、表面温度が高温であると外部への放熱が増大しエネルギー効率の上で不利となるので、各反応器間の温度の相違に関わらず雰囲気温度＋１５℃〜３５℃となるよう、断熱材厚みを調整することが通例である。これは改質器右側面断熱材８ｈについても同様である。   The right side surface temperature of the reformer left side heat insulating material 8g is different for each reactor, the highest is the upper 400-500 ° C on the high temperature side of the high temperature shift reactor 9 and the preheater 3 and the lowest is below 100 ° C at the PROX5 inlet. is there. Since there is a maximum temperature difference of 400 ° C inside, the surface temperature on the left side also varies depending on the location, but if the surface temperature is high, heat dissipation to the outside increases and this is disadvantageous in terms of energy efficiency. It is customary to adjust the thickness of the heat insulating material so that the ambient temperature becomes + 15 ° C. to 35 ° C. regardless of the temperature difference. The same applies to the reformer right side heat insulating material 8h.

改質部左側面断熱材８ｅの右面側表面温度は、改質部１表面温度と同様であり、下側が６００〜７００℃、上側が４００〜５００℃になる。左側表面温度は、改質器左側面断熱材８ｇの右側面表面温度に等しい。改質器左側面断熱材８ｇの左側面において、改質部１に相当する位置がほかの部分より高温となり、放熱源となることはエネルギー効率の上で不利となる。従って、改質器左側面断熱材８ｇ左側面の改質部１に相当する位置の温度は、他の反応器と同じかより低いことが望ましい。よって、全点で予熱器３高温側の上部４００〜５００℃と同じか、より低温であることが望ましい。これは改質部右側面断熱材８ｆについても同様である。   The right side surface temperature of the modified part left side heat insulating material 8e is the same as the modified part 1 surface temperature, and the lower side is 600 to 700 ° C and the upper side is 400 to 500 ° C. The left side surface temperature is equal to the right side surface temperature of the reformer left side heat insulating material 8g. On the left side surface of the reformer left side heat insulating material 8g, the position corresponding to the reforming portion 1 becomes higher than other portions, and it becomes disadvantageous in terms of energy efficiency to become a heat radiation source. Accordingly, the temperature at the position corresponding to the reforming section 1 on the left side surface of the reformer left side heat insulating material 8g is desirably the same as or lower than that of the other reactors. Therefore, it is desirable that the temperature is the same as or lower than the upper 400 to 500 ° C. on the high temperature side of the preheater 3 in all points. The same applies to the modified portion right side heat insulating material 8f.

第３の実施形態における、各断熱材の厚みの相関関係について説明する。   The correlation of the thickness of each heat insulating material in 3rd Embodiment is demonstrated.

まず、改質部１に着目する。改質部１は蒸発器−改質部間断熱材８ｂ、改質部−高温シフト反応器間断熱材８ｊ、改質部左側面断熱材８ｅ、改質部右側面断熱材８ｆで囲まれている。   First, focus on the reforming unit 1. The reforming unit 1 is surrounded by an evaporator-reforming unit heat insulating material 8b, a reforming unit-high temperature shift reactor heat insulating material 8j, a reforming unit left side heat insulating material 8e, and a reforming unit right side heat insulating material 8f. Yes.

蒸発器−改質部間断熱材８ｂの厚み方向の温度差は、下側で５００〜６００℃、上側で５０〜３５０℃である。一方、改質部−高温シフト反応器間断熱材８ｊの厚み方向温度差は、下側で１００〜３００℃、上側で０〜１００℃である。蒸発器−改質部間断熱材８ｂの温度差は、改質部−高温シフト反応器間断熱材８ｊに比べて大きい。   The temperature difference in the thickness direction of the evaporator-reformed portion heat insulating material 8b is 500 to 600 ° C. on the lower side and 50 to 350 ° C. on the upper side. On the other hand, the temperature difference in the thickness direction of the reforming part-high temperature shift reactor heat insulating material 8j is 100 to 300 ° C. on the lower side and 0 to 100 ° C. on the upper side. The temperature difference between the evaporator-reformer insulation 8b is larger than that of the reformer-high temperature shift reactor 8j.

改質部１側の表面温度に大きな相違があると、周方向に応力が発生して耐久性に影響するリスクがあるため、大きな差がないよう設計することが望ましい。従って、蒸発器−改質部間断熱材８ｂの熱抵抗を、改質部−高温シフト反応器間断熱材８ｊと同じか、より高くする必要がある。改質部−高温シフト反応器間断熱材８ｊの最小厚みを、蒸発器−改質部間断熱材８ｂの最小厚みと同じかより小さくすることで、改質部１の表面温度の周方向の差を抑えることができる。   If there is a large difference in the surface temperature on the modified portion 1 side, there is a risk that stress is generated in the circumferential direction and affects the durability, so it is desirable to design so that there is no large difference. Therefore, it is necessary to make the thermal resistance of the evaporator-reformer thermal insulation 8b the same or higher than that of the reformer-high temperature shift reactor thermal insulator 8j. By making the minimum thickness of the reforming part-high temperature shift reactor insulating material 8j equal to or smaller than the minimum thickness of the evaporator-reforming part heat insulating material 8b, the surface temperature of the reforming unit 1 in the circumferential direction can be reduced. The difference can be suppressed.

蒸発器−改質部間断熱材８ｂを通過する改質部１からの伝熱は、蒸発器２の低温側を加熱し、水蒸気の熱として改質部１に戻る。また、改質部−高温シフト反応器間断熱材８ｊを通過する伝熱は、高温シフト反応器９の温度を維持した後予熱器３の高温側に伝熱され、予熱器３の低温側への伝熱により改質部１に戻るか、低温シフト反応器第一段４ｂ入口温度を上昇させて反応温度の維持に使用される。   The heat transfer from the reforming unit 1 passing through the evaporator-reforming unit heat insulating material 8b heats the low temperature side of the evaporator 2 and returns to the reforming unit 1 as heat of steam. Further, the heat transfer that passes through the reforming part-high temperature shift reactor heat insulating material 8j is transferred to the high temperature side of the preheater 3 after maintaining the temperature of the high temperature shift reactor 9, and then to the low temperature side of the preheater 3. It is used to maintain the reaction temperature by returning to the reforming section 1 by the heat transfer or by raising the inlet temperature of the first stage 4b of the low temperature shift reactor.

一方、改質部左側面断熱材８ｅもしくは改質部右側面断熱材８ｆを通過する改質部１からの伝熱は、改質器左側面断熱材８ｇもしくは改質器右側面断熱材８ｈを通過して改質器外に放熱される。エネルギー効率の上から、改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの熱抵抗が、蒸発器−改質部間断熱材８ｂ及び改質部−高温シフト反応器間断熱材８ｊの熱抵抗より大きく、厚い必要がある。図５から明らかなように、改質部左側面断熱材８ｅの厚みと改質部右側面断熱材８ｆの厚みの和は、蒸発器２及び高温シフト反応器９の左右方向幅から改質部１の最大直径を引いた値に等しい。これらを定式化すると、次のようになる。   On the other hand, the heat transfer from the reforming unit 1 that passes through the reforming unit left side heat insulating material 8e or the reforming unit right side heat insulating material 8f passes through the reformer left side heat insulating material 8g or the reformer right side heat insulating material 8h. It passes through and is dissipated outside the reformer. From the viewpoint of energy efficiency, the thermal resistance of the reformer left side heat insulating material 8e and the reformer right side heat insulating material 8f is determined by the evaporator-reformer heat insulator 8b and the reformer-high temperature shift reactor heat insulator. It must be larger and thicker than the thermal resistance of 8j. As apparent from FIG. 5, the sum of the thickness of the reforming portion left side heat insulating material 8e and the thickness of the reforming portion right side heat insulating material 8f is determined from the lateral width of the evaporator 2 and the high temperature shift reactor 9. Equal to the maximum diameter minus one. These are formulated as follows.

（蒸発器２及び高温シフト反応器９の左右方向幅）−（改質部１の最大直径）
＝（改質部左側面断熱材８ｅ厚み）＋（改質部右側面断熱材８ｆ厚み）
≧２×ｍｉｎ（（改質部左側面断熱材８ｅ厚み），（改質部右側面断熱材８ｆ厚み））
＞２×ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−高温シフト反応器間断熱材８ｊ厚み））
更にこれを変形して整理すると、次のようになる。 (Width in the left-right direction of the evaporator 2 and the high temperature shift reactor 9)-(maximum diameter of the reforming unit 1)
= (Modified part left side heat insulating material 8e thickness) + (modified part right side heat insulating material 8f thickness)
≧ 2 × min ((modified part left side heat insulating material 8e thickness), (modified part right side heat insulating material 8f thickness))
> 2 × max ((thickness 8b between evaporator and reforming part), (thickness 8j between reforming part and high temperature shift reactor))
Furthermore, when this is transformed and arranged, it becomes as follows.

（蒸発器２及び高温シフト反応器９の左右方向幅）
＞（改質部１の最大直径）＋２×ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−高温シフト反応器間断熱材８ｊ厚み））
すなわち、蒸発器２及び高温シフト反応器９の左右方向幅が、改質部１の最大直径に、蒸発器−改質部間断熱材８ｂ厚みもしくは改質部−高温シフト半の器間断熱材８ｊ厚みのいずれか大きい方の２倍を加えた値より大きいことが、改質部１から改質器外への放熱を抑えるための必要条件である。 (Width in the left-right direction of the evaporator 2 and the high temperature shift reactor 9)
> (Maximum diameter of the reforming section 1) + 2 × max ((thickness of the insulating material 8b between the evaporator and the reforming section), (thickness of the insulating section 8j between the reforming section and the high temperature shift reactor))
That is, the width in the left-right direction of the evaporator 2 and the high temperature shift reactor 9 is equal to the maximum diameter of the reforming section 1, and the thickness of the evaporator-reforming section heat insulating material 8b or the reforming section-high temperature shift half inter-unit heat insulating material. It is a necessary condition for suppressing the heat radiation from the reforming unit 1 to the outside of the reformer to be larger than a value obtained by adding twice the larger one of the 8j thicknesses.

蒸発器２に着目した場合の蒸発器外周断熱材８ａと蒸発器−改質部間断熱材８ｂとの相関は第１の実施形態と同様である。   The correlation between the evaporator outer peripheral heat insulating material 8a and the evaporator-reforming section heat insulating material 8b when attention is paid to the evaporator 2 is the same as that in the first embodiment.

次に、予熱器３に着目する。予熱器３の前面側には高温シフト反応器−予熱器間断熱材８ｋが、後面側には予熱器−低温反応部間断熱材８ｄが配置される。予熱器３低温側から改質反応部１ｃに供給するガスの温度を３５０〜４５０℃に維持するためには、前面の高温シフト反応器９からの入熱に比べ、後面の低温反応部４への放熱を低く抑える必要がある。従って、前面側の高温シフト反応器−予熱器間断熱材８ｋの最小厚みは、後面側の予熱器−低温反応部間断熱材８ｄの最小厚みと等しいかより小さいことが望ましい。なお、高温シフト反応部は予熱器３の高温側に隣接するだけでなく、直上流に位置するので、両者は一体として取り扱うことができる。従って、予熱器４の設計によっては、高温シフト反応器−予熱器間断熱材８ｋを削除し高温シフト反応器９と予熱器３を接触させることもできる。   Next, attention is paid to the preheater 3. On the front side of the preheater 3, a high-temperature shift reactor-preheater heat insulating material 8k is disposed, and on the rear surface side, a preheater-low temperature reaction portion heat insulating material 8d is disposed. In order to maintain the temperature of the gas supplied from the low temperature side of the preheater 3 to the reforming reaction section 1c at 350 to 450 ° C., compared with the heat input from the high temperature shift reactor 9 on the front surface, the low temperature reaction section 4 on the rear surface It is necessary to keep low heat dissipation. Therefore, it is desirable that the minimum thickness of the front-side high-temperature shift reactor-preheater insulating material 8k is equal to or smaller than the minimum thickness of the rear-surface-side preheater-low temperature reaction portion insulating material 8d. In addition, since the high temperature shift reaction part is located not only adjacent to the high temperature side of the preheater 3 but also immediately upstream, both can be handled as a unit. Therefore, depending on the design of the preheater 4, the high temperature shift reactor-preheater insulating material 8k may be deleted and the high temperature shift reactor 9 and the preheater 3 may be brought into contact with each other.

次に、高温シフト反応器９と予熱器３に着目する。高温シフト反応器９と予熱器３を一体として扱うと、前面側には改質部−高温シフト反応器間断熱材８ｊが配置され、後面側には予熱器−低温反応部間断熱材８ｄが配置される。   Next, attention is paid to the high temperature shift reactor 9 and the preheater 3. When the high temperature shift reactor 9 and the preheater 3 are handled as one body, the reformer-high temperature shift reactor heat insulating material 8j is disposed on the front surface side, and the preheater-low temperature reaction portion heat insulating material 8d is disposed on the rear surface side. Be placed.

高温シフト反応部９及び予熱器３の熱収支では、改質部−高温シフト反応器間断熱材８ｊを通じて熱を受け取り、予熱器−低温反応部間断熱材８ｄを通じて放熱する。予熱器３低温側から改質反応部１ｃに供給するガスの温度を３５０〜４５０℃に維持するためには、予熱器３温度を維持する必要があり、入熱に比べて放熱を抑える必要がある。改質器−高温シフト反応器間断熱材８ｊ最小厚みを、予熱器−低温反応部間断熱材８ｄ最小厚みより小さくすることで、予熱器−低温反応部間断熱材８ｄの熱抵抗を改質部−高温シフト反応器間断熱材８ｊの熱抵抗より大きくでき、予熱器３からの放熱を入熱より低く抑えることができる。   In the heat balance of the high temperature shift reaction part 9 and the preheater 3, heat is received through the reforming part-high temperature shift reactor heat insulating material 8j and is dissipated through the preheater-low temperature reaction part heat insulating material 8d. In order to maintain the temperature of the gas supplied to the reforming reaction section 1c from the low temperature side of the preheater 3 at 350 to 450 ° C., it is necessary to maintain the temperature of the preheater 3 and it is necessary to suppress heat radiation compared to heat input. is there. Reducing the thermal resistance of the preheater-low temperature reaction section insulation 8d by making the minimum thickness of the reformer-high temperature shift reactor insulation 8j smaller than the minimum thickness of the preheater-low temperature reaction section insulation 8d. The heat resistance of the part-high temperature shift reactor heat insulating material 8j can be made larger, and the heat radiation from the preheater 3 can be kept lower than the heat input.

第３の実施形態によれば、例えば改質部１を矩形の蒸発器２と高温シフト反応器９で挟みこみ、高温シフト反応器９の後面側に予熱器３を配置する構成において次のような利点がある。第一に蒸発器２及び高温シフト反応器９の左右幅の範囲で改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの厚みを確保できるので、改質器外周の左右幅は蒸発器２及び高温シフト反応器９の幅で決まり、改質部１の断熱が原因で改質器全体の左右幅が増大することがない。第二に改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの厚みを確保しても、蒸発器−改質部間断熱材８ｂ及び改質部−高温シフト反応器間断熱材８ｊの厚み増大につながらないため、改質部１の断熱が原因で改質器全体の前後長さが増大することはない。上記のような構成により、必要な断熱を確保しながら改質器全体の表面積増大を抑えて改質器外表面からの放熱を抑制し、エネルギー効率を増大させることができる。   According to the third embodiment, for example, in the configuration in which the reforming unit 1 is sandwiched between the rectangular evaporator 2 and the high temperature shift reactor 9 and the preheater 3 is disposed on the rear surface side of the high temperature shift reactor 9 as follows. There are significant advantages. First, since the thickness of the reforming unit left side heat insulating material 8e and the reforming unit right side heat insulating material 8f can be secured within the range of the left and right widths of the evaporator 2 and the high temperature shift reactor 9, the left and right widths of the outer periphery of the reformer are It is determined by the width of the evaporator 2 and the high temperature shift reactor 9, and the horizontal width of the entire reformer does not increase due to the heat insulation of the reforming unit 1. Second, even if the thickness of the reforming part left side heat insulating material 8e and the reforming part right side heat insulating material 8f is secured, the evaporator-reforming part heat insulating material 8b and the reforming part-high temperature shift reactor heat insulating material Since this does not lead to an increase in the thickness of 8j, the longitudinal length of the entire reformer does not increase due to the heat insulation of the reforming section 1. With the configuration as described above, it is possible to suppress an increase in the surface area of the entire reformer while suppressing necessary heat insulation, suppress heat release from the outer surface of the reformer, and increase energy efficiency.

（第４の実施形態）
第４の実施形態に係る燃料電池発電装置に備えられる改質器について図６を参照して説明する。なお、前述の各実施形態と共通する要素には同一の符号を付し、重複する説明を省略する。 (Fourth embodiment)
A reformer provided in a fuel cell power generator according to a fourth embodiment will be described with reference to FIG. In addition, the same code | symbol is attached | subjected to the element which is common in each above-mentioned embodiment, and the overlapping description is abbreviate | omitted.

図６は、第４の実施形態に係る改質器を横から見た場合の概略構成を示す側面図である。   FIG. 6 is a side view showing a schematic configuration when the reformer according to the fourth embodiment is viewed from the side.

第４の実施形態は、第３の実施形態と比べ、高温シフト反応器９と予熱器３に代わり、高温側の一部に高温シフト触媒９’を充填した高温シフト反応器付予熱器３ａが設置されている点が異なる。高温シフト反応器付予熱器３ａの前面側には改質部−予熱器間断熱材８ｃが設置され、後面側には予熱器−低温反応部間断熱材８ｄが設置されている。   Compared with the third embodiment, the fourth embodiment has a high-temperature shift reactor-equipped preheater 3 a in which a high-temperature shift catalyst 9 ′ is partially charged on the high temperature side instead of the high-temperature shift reactor 9 and the preheater 3. Different points are installed. A reformer-preheater insulation 8c is installed on the front side of the high-temperature shift reactor-equipped preheater 3a, and a preheater-low-temperature reactor insulation 8d is installed on the rear side.

第３の実施形態で説明したように、高温シフト反応器９と予熱器３は、改質部１と低温反応部４との伝熱において一体として扱える。高温シフト反応器付予熱器３ａとして一体化することで配管が削減され、かつ水性ガスシフト反応による発熱を低温側への伝熱に利用することで、改質反応部１ｃへのガス供給温度をより容易に３５０〜４５０℃に維持できる。   As described in the third embodiment, the high temperature shift reactor 9 and the preheater 3 can be handled as one body in heat transfer between the reforming unit 1 and the low temperature reaction unit 4. By integrating the preheater 3a with a high temperature shift reactor, the number of pipes is reduced, and by using the heat generated by the water gas shift reaction for heat transfer to the low temperature side, the gas supply temperature to the reforming reaction section 1c is further increased. It can be easily maintained at 350 to 450 ° C.

高温シフト反応器付予熱器３ａの高温側は、入口側から途中まで高温シフト触媒９’を充填し、出口側は充填しないことが望ましい。予熱器３高温側出口温度は低温シフト反応器第一段４ｂでの反応のため、２００〜３００℃に低下させることが望ましいが、高温シフト触媒９’では水性ガスシフト反応による発熱でガス温度が４００〜５００℃に維持されるため、高温側出口の高温シフト触媒９’が充填されない領域を確保し熱交換で温度を低下させることが望ましい。   It is desirable that the high temperature side of the preheater 3a with a high temperature shift reactor is filled with the high temperature shift catalyst 9 'from the inlet side to the middle, and the outlet side is not filled. Although the preheater 3 high temperature side outlet temperature is preferably lowered to 200 to 300 ° C. for the reaction in the first stage 4b of the low temperature shift reactor, the high temperature shift catalyst 9 ′ has a gas temperature of 400 due to heat generated by the water gas shift reaction. Since it is maintained at ˜500 ° C., it is desirable to secure a region where the high temperature shift catalyst 9 ′ at the high temperature side outlet is not filled and to lower the temperature by heat exchange.

各反応器の温度及び断熱材表面の温度は第１の実施形態と同様である。   The temperature of each reactor and the temperature of the heat insulating material surface are the same as in the first embodiment.

また、各断熱材の厚みの相関関係も第１の実施形態と同様である。   Moreover, the correlation of the thickness of each heat insulating material is the same as that of the first embodiment.

第４の実施形態によれば、例えば改質部１を矩形の蒸発器２と高温シフト反応器付予熱器３ａで挟みこむ構成において次のような利点がある。第一に蒸発器２及び高温シフト反応器付予熱器３ａの左右幅の範囲で改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの厚みを確保できるので、改質器外周の左右幅は蒸発器２及び高温シフト反応器付予熱器３ａの幅で決まり、改質部１の断熱が原因で改質器全体の左右幅が増大することがない。第二に改質部左側面断熱材８ｅ及び改質部右側面断熱材８ｆの厚みを確保しても、蒸発器−改質部間断熱材８ｂ及び改質部−予熱器間断熱材８ｃの厚み増大につながらないため、改質部１の断熱が原因で改質器全体の前後長さが増大することはない。また、第３の実施形態に比べて配管構成が簡素化され、改質器全体の前後長さを縮小することが可能である。上記のような構成により、必要な断熱を確保しながら改質器全体の表面積増大を抑えて改質器外表面からの放熱を抑制し、エネルギー効率を増大させることができる。   According to the fourth embodiment, for example, there is the following advantage in the configuration in which the reforming unit 1 is sandwiched between the rectangular evaporator 2 and the preheater 3a with a high temperature shift reactor. First, the thickness of the reforming unit left side heat insulating material 8e and the reforming unit right side heat insulating material 8f can be secured within the range of the left and right widths of the evaporator 2 and the preheater 3a with the high temperature shift reactor, The left and right width is determined by the width of the evaporator 2 and the preheater 3a with the high temperature shift reactor, and the right and left width of the entire reformer does not increase due to the heat insulation of the reforming unit 1. Secondly, even if the thickness of the reforming part left side heat insulating material 8e and the reforming part right side heat insulating material 8f is secured, the evaporator-reforming part heat insulating material 8b and the reforming part-preheater heat insulating material 8c Since the thickness does not increase, the length of the entire reformer does not increase due to the heat insulation of the reforming section 1. Further, the piping configuration is simplified compared to the third embodiment, and the length of the entire reformer can be reduced. With the configuration as described above, it is possible to suppress an increase in the surface area of the entire reformer while suppressing necessary heat insulation, suppress heat release from the outer surface of the reformer, and increase energy efficiency.

（第５の実施形態）
第５の実施形態に係る燃料電池発電装置に備えられる改質器について図７を参照して説明する。なお、前述の各実施形態と共通する要素には同一の符号を付し、重複する説明を省略する。 (Fifth embodiment)
A reformer provided in a fuel cell power generator according to a fifth embodiment will be described with reference to FIG. In addition, the same code | symbol is attached | subjected to the element which is common in each above-mentioned embodiment, and the overlapping description is abbreviate | omitted.

図７は、第５の実施形態に係る改質器を上から見た場合の概略構成を示す上面図である。   FIG. 7 is a top view showing a schematic configuration when the reformer according to the fifth embodiment is viewed from above.

第５の実施形態は、第３の実施形態と比べ、給水予熱器５が改質部１の下部ではなく、改質部１の側面に配置される点が異なる。図７では給水予熱器５は改質部１の左側面に給水予熱器５が配置されているが、右側面に配置されてもよい。給水予熱器５の改質部１に向かう面は低温側であり、改質器外周に向かう面は高温側である。   The fifth embodiment is different from the third embodiment in that the feed water preheater 5 is arranged not on the lower part of the reforming unit 1 but on the side surface of the reforming unit 1. In FIG. 7, the feed water preheater 5 is disposed on the left side surface of the reforming unit 1, but may be disposed on the right side surface. The surface of the feed water preheater 5 toward the reforming unit 1 is on the low temperature side, and the surface toward the reformer outer periphery is on the high temperature side.

このように給水予熱器５を配置すると、第２の実施形態で説明した利点と同様の利点がある。   When the feed water preheater 5 is arranged in this way, there are advantages similar to the advantages described in the second embodiment.

断熱材の配置は第３の実施形態と同様であるが、改質部左側面断熱材８ｅ’は改質部１と給水予熱器５低温側との間に配置される。   The arrangement of the heat insulating material is the same as that in the third embodiment, but the reformer left side heat insulator 8e 'is disposed between the reformer 1 and the low temperature side of the feed water preheater 5.

第５の実施形態においては、各反応器の温度は第３の実施形態と同様であるが、給水予熱器５については相違がある。改質部１に向かう低温側の温度は第３の実施形態と同様１００℃強である。第３の実施形態では水室内部に位置していた高温側は、第５の実施形態では改質器外周に向かっている。高温側表面温度は内部を流通するバーナ排気ガス温度により、上側にある入口で１５０〜２００℃、下側にある出口で１００℃強である。   In 5th Embodiment, although the temperature of each reactor is the same as that of 3rd Embodiment, there exists a difference about the feed water preheater 5. FIG. The temperature on the low temperature side toward the reforming unit 1 is a little over 100 ° C. as in the third embodiment. In the third embodiment, the high temperature side located in the water chamber is directed toward the outer periphery of the reformer in the fifth embodiment. The high temperature side surface temperature is 150 to 200 ° C. at the upper inlet and slightly higher than 100 ° C. at the lower outlet, depending on the burner exhaust gas temperature circulating inside.

各反応器の温度は第３の実施形態と同様で改質部１表面が最も高温である。流通する流体が改質部１に供給される蒸発器２と予熱器３を、改質部１及びその直下流にあたる高温シフト反応器９の前後に配置することにより、改質部１からの伝熱を回収しエネルギー効率を上げることができる。また、蒸発器外周断熱材８ａ、蒸発器−改質部間断熱材８ｂ、改質部−高温シフト反応器間断熱材８ｊ、予熱器−低温反応部間断熱材８ｄを配置することで、それぞれの反応器を適正な温度に保つことができる。   The temperature of each reactor is the same as in the third embodiment, and the surface of the reforming unit 1 is the hottest. By disposing the evaporator 2 and the preheater 3 through which the circulating fluid is supplied to the reforming unit 1 before and after the reforming unit 1 and the high temperature shift reactor 9 that is immediately downstream thereof, the transfer from the reforming unit 1 is performed. It can recover heat and increase energy efficiency. Further, by disposing the evaporator outer peripheral heat insulating material 8a, the evaporator-reforming section heat insulating material 8b, the reforming section-high temperature shift inter-reactor heat insulating material 8j, and the preheater-low temperature reaction section heat insulating material 8d, respectively. The reactor can be kept at the proper temperature.

第５の実施形態における各断熱材の表面温度は第３の実施形態と同様であるが、改質部左側面断熱材８ｅ’については前述の改質部左側面断熱材８ｅと相違がある。右面側表面温度は、第１の実施形態と同様下側が６００〜７００℃、上側が４００〜５００℃になる。左側表面温度は、給水予熱器５低温側表面温度に等しく、１００℃強である。改質部左側面断熱材８ｅ’の厚み方向温度差は、下側が５００〜６００℃、上側が３００〜４００℃である。   The surface temperature of each heat insulating material in the fifth embodiment is the same as that in the third embodiment, but the modified portion left side heat insulating material 8e 'is different from the above modified portion left side heat insulating material 8e. The right side surface temperature is 600 to 700 ° C. on the lower side and 400 to 500 ° C. on the upper side as in the first embodiment. The left surface temperature is equal to the low-temperature surface temperature of the feed water preheater 5 and is slightly higher than 100 ° C. The temperature difference in the thickness direction of the modified portion left side heat insulating material 8e 'is 500 to 600 ° C on the lower side and 300 to 400 ° C on the upper side.

第５の実施形態における、各断熱材の厚みの相関関係について説明する。   The correlation of the thickness of each heat insulating material in 5th Embodiment is demonstrated.

改質部１に着目すると、改質部１は蒸発器−改質部間断熱材８ｂ、改質部−高温シフト反応器間断熱材８ｊ、改質部左側面断熱材８ｅ’、改質部右側面断熱材８ｆで囲まれている。   Focusing on the reforming unit 1, the reforming unit 1 includes an evaporator-reforming unit heat insulating material 8b, a reforming unit-high temperature shift reactor heat insulating material 8j, a reforming unit left side heat insulating material 8e ', and a reforming unit. It is surrounded by the right side heat insulating material 8f.

蒸発器−改質部間断熱材８ｂと改質部−高温シフト反応器間断熱材８ｊの厚みの相関関係は、第３の実施形態での説明と同様で、蒸発器−改質部間断熱材８ｂの最小厚みは改質部−高温シフト反応器間断熱材８ｊの最小厚みと同じかより大きいことが望ましい。また、第２の実施形態での説明と同様で、エネルギー効率の上から、改質部右側面断熱材８ｆの熱抵抗は、蒸発器−改質部間断熱材８ｂ、改質部−高温シフト反応器間断熱材８ｊ及び改質部左側面断熱材８ｅ’の熱抵抗より大きい必要があり、より厚みが大きい必要がある。   The correlation between the thickness of the evaporator-reformer insulation 8b and the thickness of the reformer-high temperature shift reactor insulator 8j is the same as described in the third embodiment, and the evaporator-reformer insulation. Desirably, the minimum thickness of the material 8b is equal to or larger than the minimum thickness of the heat insulating material 8j between the reforming section and the high temperature shift reactor. Further, in the same manner as described in the second embodiment, from the viewpoint of energy efficiency, the thermal resistance of the right-side heat insulating material 8f of the reforming section is the evaporator-reforming section heat insulating material 8b, the reforming section-high temperature shift. The thermal resistance of the inter-reactor heat insulating material 8j and the reforming portion left side heat insulating material 8e 'needs to be larger than the thermal resistance, and the thickness needs to be larger.

改質部左側面断熱材８ｅ’の厚みと改質部右側面断熱材８ｆの厚みの和は、蒸発器２及び高温シフト反応器９の左右方向幅から改質部１の最大直径と給水予熱器５の左右方向幅を引いた値に等しい。また、改質部左側面断熱材８ｅ’の厚みは、蒸発器−改質部間断熱材８ｂもしくは改質部−高温シフト反応器間断熱材８ｊと等しいかより大きい。これらの関係を定式化すると、次のようになる。   The sum of the thickness of the reforming portion left side heat insulating material 8e ′ and the thickness of the reforming portion right side heat insulating material 8f is determined from the horizontal width of the evaporator 2 and the high temperature shift reactor 9 and the maximum diameter of the reforming portion 1 and the feed water preheating. It is equal to the value obtained by subtracting the horizontal width of the vessel 5. The thickness of the reforming part left side heat insulating material 8e 'is equal to or larger than the evaporator-reforming part heat insulating material 8b or the reforming part-high temperature shift reactor heat insulating material 8j. These relationships are formulated as follows.

（改質部右側面断熱材８ｆ厚み）
＝（蒸発器２及び高温シフト反応器９の左右方向幅）−（改質部１の最大直径）−（給水予熱器５の左右の幅）−（改質部左側面断熱材８ｅ’厚み）
＞（改質部左側面断熱材８ｅ’厚み）
≧ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−高温シフト反応器間断熱材８ｊ厚み））
更にこれを変形し整理すると、次のようになる。 (Modified section right side insulation 8f thickness)
= (Width in the left-right direction of the evaporator 2 and the high temperature shift reactor 9)-(Maximum diameter of the reforming unit 1)-(Width in the left and right of the feed water preheater 5)-(Thickness of the heat insulating material 8e 'on the left side of the reforming unit)
> (Modified part left side heat insulating material 8e 'thickness)
≧ max ((thickness 8b between the evaporator and reforming part), (thickness 8j between the reforming part and the high temperature shift reactor)))
Furthermore, when this is transformed and arranged, it becomes as follows.

（蒸発器２及び高温シフト反応器９の左右方向幅）
≧（改質部１の最大直径）＋ （給水予熱器５の左右の幅）＋２×（改質部左側面断熱材８ｅ’厚み）
＞（改質部１の最大直径）＋２×（改質部左側面断熱材８ｅ’厚み）
≧（改質部１の最大直径）＋２×ｍａｘ（（蒸発器−改質部間断熱材８ｂ厚み），（改質部−高温シフト反応器間断熱材８ｊ厚み））
すなわち、第３の実施形態と同様、蒸発器２及び高温シフト反応器９の左右方向幅が、改質部１の最大直径に、蒸発器−改質部間断熱材８ｂ厚みもしくは改質部−高温シフト反応器間断熱材８ｊ厚みのいずれか大きい方の２倍を加えた値より大きいことが、改質部１から改質器外への放熱を抑えるための必要条件である。 (Width in the left-right direction of the evaporator 2 and the high temperature shift reactor 9)
≧ (maximum diameter of reforming section 1) + (left and right width of feed water preheater 5) + 2 × (reforming section left side heat insulating material 8e ′ thickness)
> (Maximum diameter of the reforming section 1) + 2 × (thickness of the reforming section left side heat insulating material 8e ′)
≧ (maximum diameter of the reforming section 1) + 2 × max ((thickness of the insulating material 8b between the evaporator and the reforming section), (thickness of the insulating section 8j between the reforming section and the high temperature shift reactor))
That is, as in the third embodiment, the width in the left-right direction of the evaporator 2 and the high temperature shift reactor 9 is equal to the maximum diameter of the reforming unit 1, the thickness of the evaporator-reforming unit heat insulating material 8 b or the reforming unit— It is a necessary condition for suppressing the heat radiation from the reforming unit 1 to the outside of the reformer to be larger than a value obtained by adding twice the larger one of the thicknesses of the high temperature shift inter-reactor heat insulating material 8j.

蒸発器２に着目した場合の蒸発器外周断熱材８ａと蒸発器−改質部間断熱材８ｂとの相関は第一から第４の実施形態と同様で、蒸発器−改質部間断熱材８ｂの厚みは蒸発器外周断熱材８ａの厚みより小さいことが望ましい。   The correlation between the evaporator outer peripheral heat insulating material 8a and the evaporator-reforming section heat insulating material 8b when attention is paid to the evaporator 2 is the same as in the first to fourth embodiments, and the evaporator-reforming section heat insulating material. The thickness of 8b is desirably smaller than the thickness of the evaporator outer peripheral heat insulating material 8a.

予熱器３に着目した場合の、高温シフト反応器−予熱器間断熱材８ｋと予熱器−低温反応部間断熱材８ｄとの相関は第３の実施形態と同様で、高温シフト反応器−予熱器間断熱材８ｋ最小厚みを、予熱器−低温反応部間断熱材８ｄ最小厚みより小さくすることが望ましい。予熱器３設計によっては高温シフト反応器−予熱器間断熱材８ｋを削除し高温シフト反応器９と予熱器３を接触させても良い。   When attention is paid to the preheater 3, the correlation between the high temperature shift reactor-preheater insulating material 8k and the preheater-low temperature reaction section heat insulating material 8d is the same as that of the third embodiment, and the high temperature shift reactor-preheater. It is desirable that the minimum thickness of the inter-insulator heat insulating material 8k be smaller than the minimum thickness of the pre-heater-low temperature reaction portion heat insulating material 8d. Depending on the preheater 3 design, the high temperature shift reactor-preheater insulating material 8k may be deleted and the high temperature shift reactor 9 and the preheater 3 may be brought into contact with each other.

高温シフト反応器９と予熱器３に着目した場合の、改質部−高温シフト反応器間断熱材８ｊと予熱器−低温反応部間断熱材８ｄとの相関は第３の実施形態と同様で、改質部−高温シフト反応器間断熱材８ｊ最小厚みを、予熱器−低温反応部間断熱材８ｄ最小厚みより小さくすることが望ましい。   When attention is paid to the high temperature shift reactor 9 and the preheater 3, the correlation between the reforming part-high temperature shift reactor heat insulating material 8j and the preheater-low temperature reaction part heat insulating material 8d is the same as in the third embodiment. It is desirable that the minimum thickness of the reforming part-high temperature shift reactor heat insulating material 8j be smaller than the minimum thickness of the preheater-low temperature reaction part heat insulating material 8d.

第５の実施形態によれば、例えば改質部１を矩形の蒸発器２と高温シフト反応器９で挟みこみ、かつ改質部１の蒸発器２にも高温シフト反応器９にも面しない位置に給水予熱器５を配する構成において次のような利点がある。第一に、給水予熱器５の左右方向厚みを適切な値に抑えれば、蒸発器２及び高温シフト反応器９の左右幅の範囲で改質部左側面断熱材８ｅ’及び改質部右側面断熱材８ｆの厚みを確保できるので、改質器外周の左右幅は蒸発器２及び高温シフト反応器９の幅で決まり、改質部１の断熱が原因で改質器全体の左右幅が増大することがない。本構成にかかる給水予熱器５は流速を上げて伝熱を促進するため、高温側のバーナ排気ガス流路、低温側の改質水流路とも左右方向の幅を狭めて製作することが通例なので、上記の構成に適合する。第二に改質部左側面断熱材８ｅ’及び改質部右側面断熱材８ｆの厚みを確保しても、蒸発器−改質部間断熱材８ｂ及び改質部−高温シフト反応器間断熱材８ｊの厚み増大につながらないため、改質部１の断熱が原因で改質器全体の前後長さが増大することはない。上記のような構成により、必要な断熱を確保しながら改質器全体の表面積増大を抑えて改質器外表面からの放熱を抑制し、エネルギー効率を増大させることができる。   According to the fifth embodiment, for example, the reforming unit 1 is sandwiched between the rectangular evaporator 2 and the high temperature shift reactor 9, and does not face neither the evaporator 2 nor the high temperature shift reactor 9 of the reforming unit 1. The configuration in which the feed water preheater 5 is arranged at the position has the following advantages. First, if the thickness in the left-right direction of the feed water preheater 5 is suppressed to an appropriate value, the reformer left side heat insulating material 8e ′ and the reformer right side within the range of the left and right widths of the evaporator 2 and the high temperature shift reactor 9 Since the thickness of the surface heat insulating material 8f can be secured, the left and right width of the outer periphery of the reformer is determined by the width of the evaporator 2 and the high temperature shift reactor 9, and the right and left width of the entire reformer is reduced due to the heat insulation of the reforming section 1. There is no increase. Since the feed water preheater 5 according to this configuration increases the flow rate and promotes heat transfer, it is customary to manufacture both the high-temperature side burner exhaust gas channel and the low-temperature side reformed water channel with a narrow width in the left-right direction. Conforms to the above configuration. Secondly, even if the thickness of the reforming unit left side heat insulating material 8e ′ and the reforming unit right side heat insulating material 8f is secured, the evaporator-reforming unit heat insulating material 8b and the reforming unit-high temperature shift reactor thermal insulation are provided. Since the thickness of the material 8j is not increased, the longitudinal length of the entire reformer does not increase due to the heat insulation of the reforming section 1. With the configuration as described above, it is possible to suppress an increase in the surface area of the entire reformer while suppressing necessary heat insulation, suppress heat release from the outer surface of the reformer, and increase energy efficiency.

以上詳述したように各実施形態によれば、改質効率を向上させることが可能となる。   As described above in detail, according to each embodiment, it is possible to improve the reforming efficiency.

本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

１…改質部、１ａ…バーナ、１ｂ…バーナ燃焼空間、１ｃ…改質反応部、１ｄ…再生室、２…蒸発器、３…予熱器、３ａ…高温シフト反応器付予熱器、４…低温反応部、４ａ…脱硫器、４ｂ…低温シフト反応器第一段、４ｃ…低温シフト反応器第二段、４ｄ…ＰＲＯＸ、４ｅ…低温シフト反応冷却器、５…給水予熱器、６ａ…改質燃料、６ｂ…改質水、６ｃ…シフト反応器出口ガス、６ｄ…ＰＲＯＸ空気、６ｅ…ＰＲＯＸ入口ガス、６ｆ…改質器出口ガス、７ａ…バーナ空気、７ｂ…バーナ燃料、７ｃ…改質器バーナ出口ガス、８ａ…蒸発器外周断熱材、８ｂ…蒸発器−改質部間断熱材、８ｃ…改質部−予熱器間断熱材、８ｄ…予熱器−低温反応部間断熱材、８ｅ，８ｅ’…改質部左側面断熱材、８ｆ…改質部右側面断熱材、８ｇ…改質器左側面断熱材、８ｈ…改質器右側面断熱材、８ｊ…改質部−高温シフト反応器間断熱材、８ｋ…高温シフト反応部−予熱器間断熱材、９…高温シフト反応器、９’…高温シフト触媒。   DESCRIPTION OF SYMBOLS 1 ... Reforming part, 1a ... Burner, 1b ... Burner combustion space, 1c ... Reforming reaction part, 1d ... Regeneration room, 2 ... Evaporator, 3 ... Preheater, 3a ... Preheater with high temperature shift reactor, 4 ... Low temperature reaction section, 4a ... desulfurizer, 4b ... low temperature shift reactor first stage, 4c ... low temperature shift reactor second stage, 4d ... PROX, 4e ... low temperature shift reaction cooler, 5 ... feed water preheater, 6a ... kai Fuel, 6b ... reformed water, 6c ... shift reactor outlet gas, 6d ... PROX air, 6e ... PROX inlet gas, 6f ... reformer outlet gas, 7a ... burner air, 7b ... burner fuel, 7c ... reforming Evaporator outlet gas, 8a ... evaporator outer peripheral heat insulating material, 8b ... evaporator-reforming part heat insulating material, 8c ... reforming part-preheater heat insulating material, 8d ... preheater-low temperature reaction part heat insulating material, 8e , 8e '... reformer left side heat insulating material, 8f ... reformer right side heat insulating material, 8g ... reformer left Surface heat insulating material, 8h ... Insulating material on the right side of the reformer, 8j ... Insulating material between the reforming section and the high temperature shift reactor, 8k ... Heat insulating material between the high temperature shift reaction section and the preheater, 9 ... High temperature shift reactor, 9 ' ... high temperature shift catalyst.

Claims (13)

炭化水素系燃料と水蒸気との混合ガスを導入して水素リッチガスを生成する改質部と、
前記混合ガスの生成に使用される水蒸気を発生する蒸発器と、
前記改質部から生成される水素リッチガスとの熱交換により前記混合ガスを加熱する予熱器と、
少なくとも前記予熱器から導出される水素リッチガス中の一酸化炭素を化学反応により低減する機能を有する低温反応部と
を備えた改質器であって、
前記蒸発器、前記改質部、および前記予熱器は、この順序で配列しており、且つそれぞれの周囲に断熱材を備え、当該配列の方向である第１の方向と直交する第２の方向における前記改質部の幅が、前記第２の方向における前記蒸発器の幅もしくは前記予熱器の幅の少なくとも一方よりも小さいことを特徴とする改質器。 A reforming section that introduces a mixed gas of hydrocarbon fuel and water vapor to generate a hydrogen-rich gas;
An evaporator that generates water vapor used to generate the mixed gas;
A preheater that heats the mixed gas by heat exchange with the hydrogen-rich gas generated from the reforming section;
A reformer comprising at least a low-temperature reaction section having a function of reducing carbon monoxide in the hydrogen-rich gas derived from the preheater by a chemical reaction,
The evaporator, the reforming unit, and the preheater are arranged in this order, and each is provided with a heat insulating material, and the second direction is orthogonal to the first direction that is the direction of the arrangement. The reformer has a width smaller than at least one of the width of the evaporator or the width of the preheater in the second direction. 前記改質部は円筒形状であり、
前記第２の方向における前記蒸発器の幅と前記予熱器の幅はいずれも、前記改質部の最大直径に、前記蒸発器と前記改質部との間の断熱材の最小厚みの２倍、もしくは前記改質部と前記予熱器との間の断熱材の最小厚みの２倍のいずれか大きい方を加えた値より大きいことを特徴とする請求項１に記載の改質器。 The reforming part has a cylindrical shape,
The width of the evaporator and the width of the preheater in the second direction are both the maximum diameter of the reforming section and twice the minimum thickness of the heat insulating material between the evaporator and the reforming section. The reformer according to claim 1, wherein the reformer is larger than a value obtained by adding the larger one of the minimum thicknesses of the heat insulating material between the reformer and the preheater. 前記蒸発器と前記改質部との間の断熱材の最小厚みが、前記改質器外周と前記蒸発器との間の断熱材の最小厚みより小さいことを特徴とする請求項１又は２に記載の改質器。   The minimum thickness of the heat insulating material between the evaporator and the reforming unit is smaller than the minimum thickness of the heat insulating material between the reformer outer periphery and the evaporator. The reformer described. 前記改質部、前記予熱器、および前記低温反応部は、この順序で配列しており、
前記改質部と前記予熱器との間の断熱材の最小厚みが、前記予熱器と前記低温反応部との間の断熱材の最小厚みと等しいかより小さいことを特徴とする請求項１乃至３のいずれか１項に記載の改質器。 The reforming section, the preheater, and the low temperature reaction section are arranged in this order,
The minimum thickness of the heat insulating material between the reforming part and the preheater is equal to or smaller than the minimum thickness of the heat insulating material between the preheater and the low temperature reaction part. 4. The reformer according to any one of 3 above. 前記蒸発器と前記改質部との間の断熱材の最小厚みが、前記改質部と前記予熱器との間の断熱材の最小厚みと等しいかより大きいことを特徴とする請求項１乃至４のいずれか１項に記載の改質器。   The minimum thickness of the heat insulating material between the evaporator and the reforming unit is equal to or larger than the minimum thickness of the heat insulating material between the reforming unit and the preheater. 5. The reformer according to any one of 4 above. 前記改質部の前記蒸発器にも前記予熱器にも面しない位置に、前記蒸発器に導入される水を予熱する給水予熱器を更に備え、
前記給水予熱器の低温側が断熱材を介して前記改質部に面しており、前記改質部と前記給水予熱器との間は断熱材の最小厚みが、前記蒸発器と前記改質部との間の断熱材の最小厚みと等しいかより大きいことを特徴とする請求項１乃至５のいずれか１項に記載の改質器。 A feed water preheater that preheats water introduced into the evaporator at a position of the reforming unit that faces neither the evaporator nor the preheater;
The low temperature side of the feed water preheater faces the reforming part via a heat insulating material, and the minimum thickness of the heat insulating material is between the reforming part and the feed water preheater, and the evaporator and the reforming part. The reformer according to any one of claims 1 to 5, wherein the reformer is equal to or greater than a minimum thickness of the heat insulating material between the two. 炭化水素系燃料と水蒸気との混合ガスを導入して水素リッチガスを生成する改質部と、
前記混合ガスの生成に使用される水蒸気を発生する蒸発器と、
前記改質部から生成される水素リッチガス中の一酸化炭素を化学反応により低減する高温シフト反応器と、
前記高温シフト反応器から導出される水素リッチガスとの熱交換により前記混合ガスを加熱する予熱器と、
少なくとも前記予熱器から生成される水素リッチガス中の一酸化炭素を化学反応により低減する機能を有する低温反応部と
を備えた改質器であって、
前記蒸発器、前記改質部、前記高温シフト反応器、および前記予熱器は、この順序で配列しており、且つそれぞれの周囲に断熱材を備え、当該配列の方向である第１の方向と直交する第２の方向における前記改質部の幅が、前記第２の方向における前記蒸発器の幅もしくは前記予熱器の幅の少なくとも一方よりも小さいことを特徴とする改質器。 A reforming section that introduces a mixed gas of hydrocarbon fuel and water vapor to generate a hydrogen-rich gas;
An evaporator that generates water vapor used to generate the mixed gas;
A high temperature shift reactor for reducing carbon monoxide in the hydrogen-rich gas produced from the reforming section by a chemical reaction;
A preheater for heating the mixed gas by heat exchange with a hydrogen rich gas derived from the high temperature shift reactor;
A reformer comprising at least a low-temperature reaction section having a function of reducing carbon monoxide in the hydrogen-rich gas produced from the preheater by a chemical reaction,
The evaporator, the reforming unit, the high temperature shift reactor, and the preheater are arranged in this order, and are provided with a heat insulating material around each, and a first direction that is the direction of the arrangement, A reformer characterized in that a width of the reforming section in a second direction perpendicular to each other is smaller than at least one of a width of the evaporator or a width of the preheater in the second direction. 前記改質部は円筒形状であり、
前記改質部、前記予熱器、および前記低温反応部は、この順序で配列しており、
前記第２の方向における前記蒸発器の幅と高温シフト反応器の幅はいずれも、前記改質部の最大直径に、前記蒸発器と前記改質部との間の断熱材の最小厚みの２倍、もしくは前記高温シフト反応器と前記低温反応部との間の断熱材の最小厚みの２倍のいずれか大きい方を加えた値より大きいことを特徴とする請求項７に記載の改質器。 The reforming part has a cylindrical shape,
The reforming section, the preheater, and the low temperature reaction section are arranged in this order,
Both the width of the evaporator and the width of the high temperature shift reactor in the second direction are 2 of the maximum diameter of the reforming section and the minimum thickness of the heat insulating material between the evaporator and the reforming section. The reformer according to claim 7, wherein the reformer is larger than a value obtained by adding the larger one of the two times the minimum thickness of the heat insulating material between the high-temperature shift reactor and the low-temperature reaction section, whichever is larger. . 前記蒸発器と前記改質部との間の断熱材の最小厚みが、前記改質器外周と前記蒸発器との間の断熱材の最小厚みより小さいことを特徴とする請求項７又は８に記載の改質器。   The minimum thickness of the heat insulating material between the evaporator and the reformer is smaller than the minimum thickness of the heat insulating material between the reformer outer periphery and the evaporator. The reformer described. 前記改質部と前記高温シフト反応器との間の断熱材の最小厚み、および、前記高温シフト反応器と前記予熱器との間の断熱材の最小厚みが、前記予熱器と前記低温反応部との間の断熱材の最小厚みと等しいかより小さいことを特徴とする請求項７乃至９のいずれか１項に記載の改質器。   The minimum thickness of the heat insulating material between the reforming section and the high temperature shift reactor, and the minimum thickness of the heat insulating material between the high temperature shift reactor and the preheater are the preheater and the low temperature reaction section. The reformer according to any one of claims 7 to 9, wherein the reformer is equal to or smaller than the minimum thickness of the heat insulating material between them. 前記蒸発器と前記改質部との間の断熱材の最小厚みが、前記改質部と前記高温シフト反応器との間の断熱材の最小厚みと等しいかより大きいことを特徴とする請求項７乃至１０のいずれか１項に記載の改質器。   The minimum thickness of the heat insulating material between the evaporator and the reforming unit is equal to or greater than the minimum thickness of the heat insulating material between the reforming unit and the high temperature shift reactor. The reformer according to any one of 7 to 10. 前記改質部の前記蒸発器にも前記高温シフト反応器にも面しない位置に、前記蒸発器に導入される水を予熱する給水予熱器を更に備え、
前記給水予熱器の低温側が断熱材を介して改質部に面しており、前記改質部と前記給水予熱器との間は断熱材の最小厚みが、前記蒸発器と前記改質部との間の断熱材の最小厚みと等しいかより大きいことを特徴とする請求項７乃至１１のいずれか１項に記載の改質器。 A feed water preheater for preheating water introduced into the evaporator at a position facing neither the evaporator nor the high temperature shift reactor of the reforming unit;
The low temperature side of the feed water preheater faces the reforming section through a heat insulating material, and the minimum thickness of the heat insulating material is between the reforming section and the feed water preheater, and the evaporator, the reforming section, and The reformer according to any one of claims 7 to 11, wherein the reformer is equal to or larger than a minimum thickness of the heat insulating material. 請求項１乃至１２のいずれか１項に記載の改質器を備えたことを特徴とする燃料電池発電装置。   A fuel cell power generator comprising the reformer according to any one of claims 1 to 12.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09227103A (en) * 1996-02-27 1997-09-02 Ishikawajima Harima Heavy Ind Co Ltd Apparatus for producing hydrogen
JP2001068135A (en) * 1999-08-25 2001-03-16 Daikin Ind Ltd Reforming system for fuel cell
WO2001047801A1 (en) * 1999-12-28 2001-07-05 Daikin Industries, Ltd. Modifying device
JP2002160903A (en) * 2000-11-22 2002-06-04 Toyota Motor Corp Hydrogen generating system with insulating structure
JP2004303695A (en) * 2003-04-01 2004-10-28 Toshiba Corp High temperature body housing device
JP2008503426A (en) * 2004-06-18 2008-02-07 ヌヴェラ・フュエル・セルズ・インコーポレーテッド Equipment for cooling and humidifying the reformate
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