JP2013201460A - スクライブライン貫通シリコンビア - Google Patents
スクライブライン貫通シリコンビア Download PDFInfo
- Publication number
- JP2013201460A JP2013201460A JP2013137819A JP2013137819A JP2013201460A JP 2013201460 A JP2013201460 A JP 2013201460A JP 2013137819 A JP2013137819 A JP 2013137819A JP 2013137819 A JP2013137819 A JP 2013137819A JP 2013201460 A JP2013201460 A JP 2013201460A
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- Prior art keywords
- wafer
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- carrier
- present disclosure
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 50
- 239000007788 liquid Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 157
- 238000004519 manufacturing process Methods 0.000 description 32
- 239000000853 adhesive Substances 0.000 description 20
- 230000001070 adhesive effect Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000004891 communication Methods 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11009—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for protecting parts during manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】半導体ウェーハは、その半導体ウェーハからスコーリングされるダイを含む。また、半導体ウェーハは、ダイの間にスクライブラインを含む。各スクライブラインは複数の貫通シリコンビアを含む。
【選択図】図2
Description
202 ダイ
204 スクライブライン
206 貫通シリコンビア
Claims (8)
- スクライブラインを有するアクティブウェーハを介して液体をキャリヤウェーハに輸送する方法であって、
前記アクティブウェーハのスクライブライン内に貫通シリコンビアを形成するステップと、
前記アクティブウェーハに前記液体を適用するステップとを備え、
前記貫通シリコンビアが、該貫通シリコンビアを介して前記液体を流すように構成される、方法。 - 前記液体を適用するステップが、前記アクティブウェーハにエッチング溶液を適用するステップを備える、請求項1に記載の方法。
- 前記キャリヤウェーハを前記アクティブウェーハに接着している接着剤を溶かして、前記キャリヤウェーハを前記アクティブウェーハからリリースするステップを更に備えた請求項2に記載の方法。
- 溶液を適用する前に前記アクティブウェーハを薄化して前記貫通シリコンビアを露出するステップを更に備えた請求項1に記載の方法。
- 前記アクティブウェーハ上に誘電体を堆積させるステップを更に備えた請求項4に記載の方法。
- 複数のダイを有する半導体ウェーハであって、
個々のダイを分離する手段と、
前記個々のダイを分離する手段内に含まれる半導体ウェーハを介して液体を流す手段とを備えた半導体ウェーハ。 - 前記液体を流す手段が、前記半導体ウェーハを介してエッチング溶液を流す手段を備える、請求項6に記載の半導体ウェーハ。
- 前記液体を流す手段が、貫通シリコンビアを備える、請求項7に記載の半導体ウェーハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/366,846 US20100200957A1 (en) | 2009-02-06 | 2009-02-06 | Scribe-Line Through Silicon Vias |
US12/366,846 | 2009-02-06 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011548433A Division JP2012517111A (ja) | 2009-02-06 | 2010-02-05 | スクライブライン貫通シリコンビア |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013201460A true JP2013201460A (ja) | 2013-10-03 |
JP6049555B2 JP6049555B2 (ja) | 2016-12-21 |
Family
ID=42103986
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011548433A Pending JP2012517111A (ja) | 2009-02-06 | 2010-02-05 | スクライブライン貫通シリコンビア |
JP2013137819A Expired - Fee Related JP6049555B2 (ja) | 2009-02-06 | 2013-07-01 | スクライブライン貫通シリコンビア |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011548433A Pending JP2012517111A (ja) | 2009-02-06 | 2010-02-05 | スクライブライン貫通シリコンビア |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100200957A1 (ja) |
EP (1) | EP2394297A2 (ja) |
JP (2) | JP2012517111A (ja) |
KR (2) | KR20110124281A (ja) |
CN (1) | CN102301466A (ja) |
TW (1) | TW201115684A (ja) |
WO (1) | WO2010091245A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497677B (zh) * | 2011-11-08 | 2015-08-21 | Inotera Memories Inc | 具有側邊矽貫通電極之半導體結構與其形成方法 |
JP6324743B2 (ja) * | 2014-01-31 | 2018-05-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US9431321B2 (en) | 2014-03-10 | 2016-08-30 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device and semiconductor integrated circuit wafer |
TWI585843B (zh) * | 2015-11-30 | 2017-06-01 | Semiconductor wafers and their cutting methods | |
CN106252306A (zh) * | 2016-08-31 | 2016-12-21 | 华天科技(西安)有限公司 | 一种采用硅通孔及裸芯塑封的超薄指纹识别***级封装件 |
CN106252305A (zh) * | 2016-08-31 | 2016-12-21 | 华天科技(西安)有限公司 | 一种先刻槽再打孔的裸芯塑封超薄指纹识别***级封装件 |
CN106252304A (zh) * | 2016-08-31 | 2016-12-21 | 华天科技(西安)有限公司 | 一种采用硅通孔及裸芯塑封的超薄指纹识别***级封装件 |
JP6384934B2 (ja) * | 2017-06-20 | 2018-09-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
KR102333452B1 (ko) | 2017-09-28 | 2021-12-03 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244132A (ja) * | 2007-03-27 | 2008-10-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法および半導体装置 |
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US4984358A (en) * | 1989-03-10 | 1991-01-15 | Microelectronics And Computer Technology Corporation | Method of assembling stacks of integrated circuit dies |
US5641416A (en) * | 1995-10-25 | 1997-06-24 | Micron Display Technology, Inc. | Method for particulate-free energy beam cutting of a wafer of die assemblies |
US5888884A (en) * | 1998-01-02 | 1999-03-30 | General Electric Company | Electronic device pad relocation, precision placement, and packaging in arrays |
JP3556503B2 (ja) * | 1999-01-20 | 2004-08-18 | 沖電気工業株式会社 | 樹脂封止型半導体装置の製造方法 |
JP2000243900A (ja) * | 1999-02-23 | 2000-09-08 | Rohm Co Ltd | 半導体チップおよびそれを用いた半導体装置、ならびに半導体チップの製造方法 |
JP2003100936A (ja) * | 2001-09-20 | 2003-04-04 | Hitachi Ltd | 半導体装置の製造方法 |
US6596562B1 (en) * | 2002-01-03 | 2003-07-22 | Intel Corporation | Semiconductor wafer singulation method |
JP4136684B2 (ja) * | 2003-01-29 | 2008-08-20 | Necエレクトロニクス株式会社 | 半導体装置及びそのダミーパターンの配置方法 |
JP2005191550A (ja) * | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | 基板の貼り付け方法 |
WO2005091389A1 (en) * | 2004-03-19 | 2005-09-29 | Showa Denko K.K. | Compound semiconductor light-emitting device and production method thereof |
US7211500B2 (en) * | 2004-09-27 | 2007-05-01 | United Microelectronics Corp. | Pre-process before cutting a wafer and method of cutting a wafer |
US7265034B2 (en) * | 2005-02-18 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
US7394148B2 (en) * | 2005-06-20 | 2008-07-01 | Stats Chippac Ltd. | Module having stacked chip scale semiconductor packages |
JP2007180395A (ja) * | 2005-12-28 | 2007-07-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
TWI324800B (en) * | 2005-12-28 | 2010-05-11 | Sanyo Electric Co | Method for manufacturing semiconductor device |
KR100837269B1 (ko) * | 2006-05-22 | 2008-06-11 | 삼성전자주식회사 | 웨이퍼 레벨 패키지 및 그 제조 방법 |
KR100772016B1 (ko) * | 2006-07-12 | 2007-10-31 | 삼성전자주식회사 | 반도체 칩 및 그 형성 방법 |
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JP2009260008A (ja) * | 2008-04-16 | 2009-11-05 | Nikon Corp | 半導体装置製造装置および半導体装置の製造方法 |
-
2009
- 2009-02-06 US US12/366,846 patent/US20100200957A1/en not_active Abandoned
-
2010
- 2010-02-05 EP EP10704278A patent/EP2394297A2/en not_active Withdrawn
- 2010-02-05 KR KR1020117020814A patent/KR20110124281A/ko active Application Filing
- 2010-02-05 CN CN2010800060816A patent/CN102301466A/zh active Pending
- 2010-02-05 JP JP2011548433A patent/JP2012517111A/ja active Pending
- 2010-02-05 WO PCT/US2010/023309 patent/WO2010091245A2/en active Application Filing
- 2010-02-05 KR KR1020137027064A patent/KR101426778B1/ko not_active IP Right Cessation
- 2010-02-06 TW TW099103665A patent/TW201115684A/zh unknown
-
2013
- 2013-07-01 JP JP2013137819A patent/JP6049555B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244132A (ja) * | 2007-03-27 | 2008-10-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法および半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2394297A2 (en) | 2011-12-14 |
JP2012517111A (ja) | 2012-07-26 |
WO2010091245A8 (en) | 2010-11-25 |
TW201115684A (en) | 2011-05-01 |
KR101426778B1 (ko) | 2014-08-05 |
WO2010091245A3 (en) | 2010-10-07 |
KR20130122020A (ko) | 2013-11-06 |
US20100200957A1 (en) | 2010-08-12 |
KR20110124281A (ko) | 2011-11-16 |
CN102301466A (zh) | 2011-12-28 |
WO2010091245A2 (en) | 2010-08-12 |
JP6049555B2 (ja) | 2016-12-21 |
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