JP2013194306A - めっき処理方法、めっき処理システムおよび記憶媒体 - Google Patents
めっき処理方法、めっき処理システムおよび記憶媒体 Download PDFInfo
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- JP2013194306A JP2013194306A JP2012065489A JP2012065489A JP2013194306A JP 2013194306 A JP2013194306 A JP 2013194306A JP 2012065489 A JP2012065489 A JP 2012065489A JP 2012065489 A JP2012065489 A JP 2012065489A JP 2013194306 A JP2013194306 A JP 2013194306A
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- plating layer
- plating
- baking
- substrate
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- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Abstract
【解決手段】基板に対してめっき処理を施すめっき処理方法は、基板2上にバリア膜として機能する第1めっき層23aを形成する工程と、第1めっき層23aを焼きしめる工程と、バリア膜として機能する第2めっき層23bを形成する工程と、第2めっき層23bを焼きしめる工程とを備えている。このようにして得られた第1めっき層23aと、第2めっき層23bとにより、バリア膜として機能するめっき層積層体23が得られる。
【選択図】図2
Description
図1乃至図7により本発明の一実施の形態について説明する。
このうち基板回転保持機構110は、図5および図6に示すように、ケーシング101内で上下に伸延する中空円筒状の回転軸111と、回転軸111の上端部に取り付けられたターンテーブル112と、ターンテーブル112の上面外周部に設けられ、基板2を支持するウエハチャック113と、回転軸111を回転駆動する回転機構162と、を有している。このうち回転機構162は、制御機構160により制御され、回転機構162によって回転軸111が回転駆動され、これによって、ウエハチャック113により支持されている基板2が回転される。
次に、基板2の表面にめっき液や洗浄液などを供給する液供給機構30,90について、図5および図6を参照して説明する。液供給機構30,90は、基板2の表面に対してめっき処理を施すめっき液を供給するめっき液供給機構30と、基板2の表面に洗浄処理液を供給する洗浄処理液供給機構90と、を含んでいる。
洗浄処理液供給機構90は、後述するように基板2の洗浄工程において用いられるものであり、図5に示すように、ノズルヘッド104に取り付けられたノズル92を含んでいる。この場合、ノズル92から、洗浄処理液またはリンス処理液のいずれかが選択的に基板2の表面に吐出される。
次に、基板2から飛散しためっき液や洗浄液などを排出する液排出機構120,125,130について、図5を参照して説明する。図5に示すように、ケーシング101内には、昇降機構164により上下方向に駆動され、排出口124,129,134を有するカップ105が配置されている。液排出機構120,125,130は、それぞれ排出口124,129,134に集められる液を排出するものとなっている。
次に本発明の変形例について述べる。上記実施の形態において、Cu拡散防止膜(バリア膜)を有するめっき層積層体23が、第1めっき層23aと第2めっき層23bとを有する例を示したが、これに限らずシード膜として機能する無電解Cuめっき層24を第1めっき層24aと第2めっき層24bとを有するめっき層積層体23から構成してもよい(図8)。
2a 凹部
10 めっき処理システム
11 基板搬送アーム
12 密着層形成部
13 触媒吸着層形成部
14 めっき層形成部
15 めっき層焼きしめ部
15A ホットプレート
15a 密閉ケーシング
15b 排気口
15c N2ガス供給口
16 無電解Cuめっき層形成部
17 電解Cuめっき層形成部
18 カセットステーション
19 制御部
19A 記憶媒体
21 密着層
22 触媒吸着層
23 めっき層積層体
23a 第1めっき層
23b 第2めっき層
24 無電解Cuめっき層
25 電解Cuめっき層
Claims (15)
- 基板に対してめっき処理を施すめっき処理方法において、
基板を準備する工程と、
基板上にめっき液を用いてめっき処理を施して、特定機能を有するめっき層を形成する工程と、
基板を加熱してめっき層を焼きしめる工程とを備え、
めっき層の形成工程とめっき層の焼きしめ工程を少なくとも二回以上繰り返すことにより、第1回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第1めっき層と、第2回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第2めっき層とからめっき層積層体を形成することを特徴とするめっき処理方法。 - めっき層積層体の各めっき層は、Cu拡散防止膜としての機能を有することを特徴とする請求項1記載のめっき処理方法。
- めっき層積層体の各めっき層は、電解Cuめっき層形成用のシード膜としての機能を有することを特徴とする請求項1記載のめっき処理方法。
- めっき層積層体を形成する前に、基板上に触媒を吸着させて触媒吸着層を形成することを特徴とする請求項2記載のめっき処理方法。
- 触媒吸着層を形成する前に、基板上にカップリング剤を吸着させて密着層を形成することを特徴とする請求項4記載のめっき処理方法。
- めっき層積層体の第1めっき層は、触媒吸着層上に形成され、第2めっき層は自己触媒めっき作用により第1めっき層上に形成されることを特徴とする請求項4記載のめっき処理方法。
- 第1回目のめっき層の形成工程および第2回目のめっき層の形成工程において、使用するめっき液の成分および温度、めっき層の膜厚は互いに同一であることを特徴とする請求項1記載のめっき処理方法。
- 第1回目のめっき層の形成工程および第2回目のめっき層の形成工程において、使用するめっき液の成分および温度、めっき層の膜厚は互いに異なることを特徴とする請求項1記載のめっき処理方法。
- 第1回目のめっき層の焼きしめ工程および第2回目の焼きしめ工程において、焼きしめ温度および焼きしめ時間を含む焼きしめ条件は互いに同一であることを特徴とする請求項1記載のめっき処理方法。
- 第1回目のめっき層の焼きしめ工程および第2回目の焼きしめ工程において、焼きしめ温度および焼きしめ時間を含む焼きしめ条件は互いに異なることを特徴とする請求項1記載のめっき処理方法。
- 前記めっき層を焼きしめる工程は、不活性雰囲気または真空で行われることを特徴とする請求項1記載のめっき処理方法。
- 基板に対してめっき処理を施すめっき処理システムにおいて、
基板上にめっき液を用いてめっき処理を施して、特定機能を有するめっき層を形成するめっき層形成部と、
基材を加熱してめっき層を焼きしめるめっき層焼きしめ部と、
めっき層形成部と、めっき層焼きしめ部との間で基板を搬送する基板搬送部と、
めっき層形成部、めっき層焼きしめ部および基板搬送部を制御する制御部とを備え、
制御部はめっき層形成部におけるめっき層の形成工程と、めっき層焼きしめ部におけるめっき層の焼きしめ工程を少なくとも二回以上繰り返すことにより、第1回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第1めっき層と、第2回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第2めっき層とからめっき層積層体を形成することを特徴とするめっき処理システム。 - めっき層積層体を形成する前に、基板上に触媒を吸着させて触媒吸着層を形成する触媒吸着層形成部を設けたことを特徴とする請求項12記載のめっき処理システム。
- 触媒吸着層を形成する前に基板上にカップリング剤を吸着させて密着層を形成する密着層形成部を設けたことを特徴とする請求項13記載のめっき処理システム。
- めっき処理システムにめっき処理方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
めっき処理方法は、
基板を準備する工程と、
基板上にめっき液を用いてめっき処理を施して、特定機能を有するめっき層を形成する工程と、
基板を加熱してめっき層を焼きしめる工程とを備え、
めっき層の形成工程とめっき層の焼きしめ工程を少なくとも二回以上繰り返すことにより、第1回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第1めっき層と、第2回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第2めっき層とからめっき層積層体を形成することを特徴とする記憶媒体。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160008472A (ko) * | 2014-07-14 | 2016-01-22 | 도쿄엘렉트론가부시키가이샤 | 촉매층 형성 방법, 촉매층 형성 시스템 및 기억 매체 |
JP2016156039A (ja) * | 2015-02-23 | 2016-09-01 | 東京エレクトロン株式会社 | 半導体装置、めっき処理方法、めっき処理システムおよび記憶媒体 |
KR20160132775A (ko) | 2015-05-11 | 2016-11-21 | 도쿄엘렉트론가부시키가이샤 | 도금 처리 방법 및 기억 매체 |
TWI593823B (zh) * | 2013-11-21 | 2017-08-01 | Tokyo Electron Ltd | Plating before processing methods and memory media |
US10179950B2 (en) * | 2015-06-19 | 2019-01-15 | Tokyo Electron Limited | Plating method, plated component, and plating system |
KR20200111253A (ko) | 2018-02-01 | 2020-09-28 | 도쿄엘렉트론가부시키가이샤 | 다층 배선의 형성 방법 및 기억 매체 |
KR20200123189A (ko) | 2018-02-21 | 2020-10-28 | 도쿄엘렉트론가부시키가이샤 | 다층 배선의 형성 방법 및 기억 매체 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6181006B2 (ja) * | 2014-07-09 | 2017-08-16 | 東京エレクトロン株式会社 | めっき前処理方法、めっき処理システムおよび記憶媒体 |
JP6359444B2 (ja) * | 2014-12-25 | 2018-07-18 | 東京エレクトロン株式会社 | 配線層形成方法、配線層形成システムおよび記憶媒体 |
JP6328575B2 (ja) * | 2015-02-23 | 2018-05-23 | 東京エレクトロン株式会社 | 触媒層形成方法、触媒層形成システムおよび記憶媒体 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63149392A (ja) * | 1986-12-12 | 1988-06-22 | Toshiba Corp | 電解Niめつき方法 |
JP2001118848A (ja) * | 1999-06-22 | 2001-04-27 | Interuniv Micro Electronica Centrum Vzw | めっき浴から堆積される金属層の特性改善方法 |
JP2001267376A (ja) * | 2000-03-14 | 2001-09-28 | Seiko Instruments Inc | Fpcの製造方法及び表示装置 |
JP2005053779A (ja) * | 2004-09-06 | 2005-03-03 | Toshiba Corp | AlNメタライズ基板 |
JP2006016684A (ja) * | 2004-07-05 | 2006-01-19 | Ebara Corp | 配線形成方法及び配線形成装置 |
JP2006152431A (ja) * | 2004-10-21 | 2006-06-15 | Alps Electric Co Ltd | めっき基板、無電解めっき方法およびこの方法を用いた回路形成方法 |
JP2009212221A (ja) * | 2008-03-03 | 2009-09-17 | C Uyemura & Co Ltd | 回路基板の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3212917A (en) * | 1962-01-03 | 1965-10-19 | Ibm | Electroless plating procedure |
US3959523A (en) * | 1973-12-14 | 1976-05-25 | Macdermid Incorporated | Additive printed circuit boards and method of manufacture |
EP1087432A1 (en) * | 1999-09-24 | 2001-03-28 | Interuniversitair Micro-Elektronica Centrum Vzw | A method for improving the quality of a metal layer deposited from a plating bath |
US6824666B2 (en) * | 2002-01-28 | 2004-11-30 | Applied Materials, Inc. | Electroless deposition method over sub-micron apertures |
JP4064801B2 (ja) * | 2002-12-12 | 2008-03-19 | 新光電気工業株式会社 | 金属膜形成処理方法、半導体装置及び配線基板 |
JP4479493B2 (ja) * | 2004-12-14 | 2010-06-09 | 富士電機デバイステクノロジー株式会社 | ガラス基板へのめっき方法及びそれを用いた磁気記録媒体の製造方法 |
JP5486821B2 (ja) | 2009-02-12 | 2014-05-07 | 学校法人 関西大学 | 無電解銅めっき方法、及び埋め込み配線の形成方法 |
-
2012
- 2012-03-22 JP JP2012065489A patent/JP5968657B2/ja active Active
-
2013
- 2013-02-22 US US14/384,495 patent/US10030308B2/en active Active
- 2013-02-22 TW TW102106193A patent/TWI521103B/zh active
- 2013-02-22 WO PCT/JP2013/054504 patent/WO2013140939A1/ja active Application Filing
- 2013-02-22 KR KR1020147025413A patent/KR101939161B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63149392A (ja) * | 1986-12-12 | 1988-06-22 | Toshiba Corp | 電解Niめつき方法 |
JP2001118848A (ja) * | 1999-06-22 | 2001-04-27 | Interuniv Micro Electronica Centrum Vzw | めっき浴から堆積される金属層の特性改善方法 |
JP2001267376A (ja) * | 2000-03-14 | 2001-09-28 | Seiko Instruments Inc | Fpcの製造方法及び表示装置 |
JP2006016684A (ja) * | 2004-07-05 | 2006-01-19 | Ebara Corp | 配線形成方法及び配線形成装置 |
JP2005053779A (ja) * | 2004-09-06 | 2005-03-03 | Toshiba Corp | AlNメタライズ基板 |
JP2006152431A (ja) * | 2004-10-21 | 2006-06-15 | Alps Electric Co Ltd | めっき基板、無電解めっき方法およびこの方法を用いた回路形成方法 |
JP2009212221A (ja) * | 2008-03-03 | 2009-09-17 | C Uyemura & Co Ltd | 回路基板の製造方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI593823B (zh) * | 2013-11-21 | 2017-08-01 | Tokyo Electron Ltd | Plating before processing methods and memory media |
KR102356776B1 (ko) * | 2014-07-14 | 2022-01-28 | 도쿄엘렉트론가부시키가이샤 | 촉매층 형성 방법, 촉매층 형성 시스템 및 기억 매체 |
JP2016019943A (ja) * | 2014-07-14 | 2016-02-04 | 東京エレクトロン株式会社 | 触媒層形成方法、触媒層形成システムおよび記憶媒体 |
KR20160008472A (ko) * | 2014-07-14 | 2016-01-22 | 도쿄엘렉트론가부시키가이샤 | 촉매층 형성 방법, 촉매층 형성 시스템 및 기억 매체 |
US9761485B2 (en) | 2014-07-14 | 2017-09-12 | Tokyo Electron Limited | Catalyst layer forming method, catalyst layer forming system, and recording medium |
TWI614371B (zh) * | 2014-07-14 | 2018-02-11 | Tokyo Electron Ltd | 觸媒層形成方法、觸媒層形成系統及記憶媒體 |
JP2016156039A (ja) * | 2015-02-23 | 2016-09-01 | 東京エレクトロン株式会社 | 半導体装置、めっき処理方法、めっき処理システムおよび記憶媒体 |
KR20160132775A (ko) | 2015-05-11 | 2016-11-21 | 도쿄엘렉트론가부시키가이샤 | 도금 처리 방법 및 기억 매체 |
US10224208B2 (en) | 2015-05-11 | 2019-03-05 | Tokyo Electron Limited | Plating method and recording medium |
KR102581894B1 (ko) * | 2015-05-11 | 2023-09-22 | 도쿄엘렉트론가부시키가이샤 | 도금 처리 방법 및 기억 매체 |
US10179950B2 (en) * | 2015-06-19 | 2019-01-15 | Tokyo Electron Limited | Plating method, plated component, and plating system |
KR20200111253A (ko) | 2018-02-01 | 2020-09-28 | 도쿄엘렉트론가부시키가이샤 | 다층 배선의 형성 방법 및 기억 매체 |
KR20200123189A (ko) | 2018-02-21 | 2020-10-28 | 도쿄엘렉트론가부시키가이샤 | 다층 배선의 형성 방법 및 기억 매체 |
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KR101939161B1 (ko) | 2019-01-16 |
TW201410928A (zh) | 2014-03-16 |
TWI521103B (zh) | 2016-02-11 |
KR20140138161A (ko) | 2014-12-03 |
US20150030774A1 (en) | 2015-01-29 |
JP5968657B2 (ja) | 2016-08-10 |
US10030308B2 (en) | 2018-07-24 |
WO2013140939A1 (ja) | 2013-09-26 |
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