JP2013168410A - Wafer holder, film formation device, and film formation method - Google Patents

Wafer holder, film formation device, and film formation method Download PDF

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JP2013168410A
JP2013168410A JP2012029311A JP2012029311A JP2013168410A JP 2013168410 A JP2013168410 A JP 2013168410A JP 2012029311 A JP2012029311 A JP 2012029311A JP 2012029311 A JP2012029311 A JP 2012029311A JP 2013168410 A JP2013168410 A JP 2013168410A
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wafer holder
wafer
back surface
holder
recess
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JP5970841B2 (en
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Junji Ochi
順二 越智
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Mitsubishi Electric Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a wafer holder capable of suppressing warpage thereof, a film formation device, and a film formation method.SOLUTION: A wafer holder according to the present invention is a wafer holder on which a wafer is mounted, and includes a front face recessed part formed on the front face of the wafer holder and accommodating the wafer, and a rear face recessed part formed on the rear face of the wafer holder and accommodating the wafer.

Description

本発明は、例えばウエハの成膜に用いられるウエハホルダ、成膜装置、成膜方法に関する。   The present invention relates to a wafer holder, a film formation apparatus, and a film formation method used for film formation of a wafer, for example.

特許文献１には、ウエハと発熱体の間に均熱板（ウエハホルダ）を設けた薄膜製造装置が開示されている。このウエハホルダにはスリットが形成されている。スリットは、ウエハホルダ内の温度差によるウエハホルダの変形を防止するために形成されている。   Patent Document 1 discloses a thin film manufacturing apparatus in which a soaking plate (wafer holder) is provided between a wafer and a heating element. A slit is formed in the wafer holder. The slit is formed to prevent the deformation of the wafer holder due to a temperature difference in the wafer holder.

特開平６−１３２２３３号公報JP-A-6-132233

特許文献１に開示されるウエハホルダでは、ウエハホルダの一方の面だけに堆積物が蓄積していくことで、ウエハホルダが反る問題があった。   In the wafer holder disclosed in Patent Document 1, there is a problem that the wafer holder warps due to accumulation of deposits on only one surface of the wafer holder.

本発明は、上述のような課題を解決するためになされたもので、ウエハホルダの反りを抑制できるウエハホルダ、成膜装置、成膜方法を提供することを目的とする。   SUMMARY An advantage of some aspects of the invention is that it provides a wafer holder, a film forming apparatus, and a film forming method capable of suppressing warpage of the wafer holder.

本願の発明に係るウエハホルダは、ウエハをのせるウエハホルダであって、該ウエハホルダの表面に形成された、ウエハを収容する表面凹部と、該ウエハホルダの裏面に形成された、ウエハを収容する裏面凹部と、を備えたことを特徴とする。   A wafer holder according to the invention of the present application is a wafer holder on which a wafer is placed, and is formed on the surface of the wafer holder to receive a wafer recess, and on the back surface of the wafer holder to receive a wafer recess. , Provided.

本願の発明に係る成膜装置は、金属材料で板状に形成されたサセプタと、該サセプタを加熱する手段と、該サセプタの上にのせられたウエハホルダと、を備え、該ウエハホルダは、表面にウエハを収容する表面凹部を有し、裏面にウエハを収容する裏面凹部を有することを特徴とする。   A film forming apparatus according to the present invention includes a susceptor formed in a plate shape with a metal material, a means for heating the susceptor, and a wafer holder placed on the susceptor, and the wafer holder is provided on a surface. It has a front surface concave portion for accommodating a wafer, and has a rear surface concave portion for accommodating a wafer on the back surface.

本願の発明に係る成膜方法は、ウエハホルダの表面の表面凹部に第１ウエハを収容し、裏面凹部を有する該ウエハホルダの裏面にサセプタを接触させる工程と、該第１ウエハ、及び該ウエハホルダの表面に堆積物を堆積させる工程と、該堆積物の堆積した該第１ウエハを該表面凹部から取外す取外し工程と、該取外し工程の後に、該ウエハホルダを反転させ、該裏面凹部に第２ウエハを収容し、該ウエハホルダの表面に該サセプタを接触させる工程と、該第２ウエハ、及び該ウエハホルダの裏面に堆積物を堆積させる工程と、を備えたことを特徴とする。   The film forming method according to the invention of the present application includes a step of housing a first wafer in a front surface concave portion of a wafer holder and bringing a susceptor into contact with the rear surface of the wafer holder having a rear surface concave portion, the first wafer, and a surface of the wafer holder Depositing the deposit on the surface, removing the first wafer on which the deposit is deposited from the concave portion of the front surface, and after the removing step, inverting the wafer holder and accommodating the second wafer in the concave portion of the back surface And a step of bringing the susceptor into contact with the surface of the wafer holder, and a step of depositing deposits on the back surface of the second wafer and the wafer holder.

本発明によれば、ウエハホルダの表面と裏面を交互に用いて堆積物を堆積するので、ウエハホルダの反りを抑制できる。   According to the present invention, since the deposit is deposited by alternately using the front and back surfaces of the wafer holder, the warp of the wafer holder can be suppressed.

本発明の実施の形態に係るウエハホルダの平面図である。It is a top view of the wafer holder concerning an embodiment of the invention. 図１の破線における断面図である。It is sectional drawing in the broken line of FIG. 本発明の実施の形態に係る成膜装置を示す図である。It is a figure which shows the film-forming apparatus which concerns on embodiment of this invention. ウエハ及びウエハホルダの表面に堆積物を堆積することを示す図である。It is a figure which shows depositing a deposit on the surface of a wafer and a wafer holder. ウエハホルダを反転させて、ウエハ及びウエハホルダの裏面に堆積物を堆積することを示す図である。It is a figure which shows reversing a wafer holder and depositing a deposit on the back surface of a wafer and a wafer holder. ウエハホルダに放射状のスリットを形成したことを示す平面図である。It is a top view which shows having formed the radial slit in the wafer holder. ウエハホルダの外周部分にスリットを形成したことを示す平面図である。It is a top view which shows having formed the slit in the outer peripheral part of a wafer holder. ウエハホルダの側面にスリットを形成したことを示す断面図である。It is sectional drawing which shows having formed the slit in the side surface of a wafer holder.

実施の形態．
図１は、本発明の実施の形態に係るウエハホルダの平面図である。図１（Ａ）はウエハホルダ１０の表面を示し、図１（Ｂ）はウエハホルダ１０の裏面を示す。ウエハホルダ１０は、電気伝導性に優れた黒鉛で形成されている。ウエハホルダ１０の表面１０ａにはウエハを収容する表面凹部１２が形成されている。ウエハホルダの裏面１０ｂにはウエハを収容する裏面凹部１６が形成されている。ウエハホルダ１０は、表面１０ａにも裏面１０ｂにも複数のウエハをのせることができるものである。なお、表面凹部１２と裏面凹部１６は同一形状で形成されている。 Embodiment.
FIG. 1 is a plan view of a wafer holder according to an embodiment of the present invention. FIG. 1A shows the front surface of the wafer holder 10, and FIG. 1B shows the back surface of the wafer holder 10. Wafer holder 10 is formed of graphite having excellent electrical conductivity. A surface recess 12 for accommodating a wafer is formed on the surface 10a of the wafer holder 10. A back surface recess 16 for accommodating a wafer is formed on the back surface 10b of the wafer holder. The wafer holder 10 can place a plurality of wafers on both the front surface 10a and the back surface 10b. The front surface recess 12 and the back surface recess 16 are formed in the same shape.

図２は、図１の破線における断面図である。裏面凹部１６は表面凹部１２の直下に形成されている。図３は、本発明の実施の形態に係る成膜装置を示す図である。成膜装置５０は、チャンバー５２を有している。チャンバー５２には、ガス供給手段５４が取り付けられている。ガス供給手段５４はチャンバー５２の内部にガスを供給するものである。   FIG. 2 is a cross-sectional view taken along a broken line in FIG. The back surface recess 16 is formed immediately below the front surface recess 12. FIG. 3 is a diagram showing a film forming apparatus according to the embodiment of the present invention. The film forming apparatus 50 has a chamber 52. A gas supply means 54 is attached to the chamber 52. The gas supply means 54 supplies gas into the chamber 52.

成膜装置５０は、電気伝導性に優れた黒鉛で形成されたサセプタ５６を有している。サセプタ５６は、チャンバー５２内の回転軸上に固定され回転する。前述したウエハホルダ１０は、サセプタ５６の上にのせられている。チャンバー５２の中には、サセプタ５６を加熱する手段としてＲＦコイル５８が設置されている。   The film forming apparatus 50 includes a susceptor 56 made of graphite having excellent electrical conductivity. The susceptor 56 is fixed on the rotation shaft in the chamber 52 and rotates. The wafer holder 10 described above is placed on the susceptor 56. An RF coil 58 is installed in the chamber 52 as means for heating the susceptor 56.

本発明の実施の形態に係る成膜方法について説明する。図４は、ウエハ及びウエハホルダの表面に堆積物を堆積することを示す図である。まず、表面凹部１２に第１ウエハ６０を収容し、ウエハホルダ１０の裏面１０ｂにサセプタ５６を接触させる。次いで、ガス供給手段５４から成膜に用いる原料ガスを導入して、第１ウエハ６０、及びウエハホルダ１０の表面１０ａに堆積物を堆積させる。図４には、ウエハホルダ１０の表面１０ａに堆積した堆積物７０が示されている。堆積物は、例えばＳｉＣエピタキシャル膜（３Ｃ−ＳｉＣ）である。なお堆積中は、ＲＦコイル５８によりウエハホルダ１０を例えば１５００℃程度まで加熱する。   A film forming method according to an embodiment of the present invention will be described. FIG. 4 is a diagram showing that deposits are deposited on the surfaces of the wafer and the wafer holder. First, the first wafer 60 is accommodated in the front surface recess 12, and the susceptor 56 is brought into contact with the back surface 10 b of the wafer holder 10. Next, a source gas used for film formation is introduced from the gas supply unit 54 to deposit deposits on the first wafer 60 and the surface 10 a of the wafer holder 10. FIG. 4 shows the deposit 70 deposited on the surface 10 a of the wafer holder 10. The deposit is, for example, a SiC epitaxial film (3C-SiC). During deposition, the wafer holder 10 is heated to about 1500 ° C. by the RF coil 58, for example.

次いで、堆積物の堆積した第１ウエハ６０を表面凹部１２から取外す。この工程を取外し工程と称する。取外し工程の後に、ウエハホルダ１０を反転させて再び堆積物を堆積する。図５は、ウエハホルダを反転させて、ウエハ及びウエハホルダの裏面に堆積物を堆積することを示す図である。ウエハホルダ１０を反転させ、裏面凹部１６に第２ウエハ６２を収容し、ウエハホルダ１０の表面１０ａにサセプタ５６を接触させる。そして、第２ウエハ６２、及びウエハホルダ１０の裏面１０ｂに堆積物を堆積させる。図５には、ウエハホルダ１０の裏面１０ｂに堆積した堆積物７２が示されている。このように、本発明の成膜方法は、ウエハホルダを定期的に反転させることで堆積物７０と堆積物７２の厚さが同等となる状態を維持して、所望の堆積工程を繰り返す。   Next, the first wafer 60 on which the deposit is deposited is removed from the surface recess 12. This process is called a removal process. After the removal process, the wafer holder 10 is inverted and the deposit is deposited again. FIG. 5 is a diagram illustrating that the wafer holder is inverted and deposits are deposited on the wafer and the back surface of the wafer holder. The wafer holder 10 is inverted, the second wafer 62 is accommodated in the back surface recess 16, and the susceptor 56 is brought into contact with the front surface 10 a of the wafer holder 10. Then, deposits are deposited on the second wafer 62 and the back surface 10 b of the wafer holder 10. FIG. 5 shows a deposit 72 deposited on the back surface 10 b of the wafer holder 10. As described above, the film forming method of the present invention repeats a desired deposition process while maintaining the state where the thicknesses of the deposit 70 and the deposit 72 are equal by periodically inverting the wafer holder.

一般に、堆積物の熱膨張率とウエハホルダの熱膨張率は異なる。そのため、堆積終了後にウエハホルダをチャンバーから取出すと、常温に冷却された堆積物が凝縮してウエハホルダに圧縮応力を及ぼす。この圧縮応力によりウエハホルダに反りが発生することがあった。ウエハホルダは自動搬送や複数バッチ化に対応するために薄く形成して軽量化することが多いので、ウエハホルダはますます反りやすくなっていた。   In general, the thermal expansion coefficient of the deposit and the thermal expansion coefficient of the wafer holder are different. For this reason, when the wafer holder is taken out of the chamber after the deposition is completed, the deposit cooled to room temperature is condensed and exerts a compressive stress on the wafer holder. The compressive stress sometimes causes the wafer holder to warp. Since wafer holders are often thinned and lightened in order to cope with automatic transfer and batch production, the wafer holders are more likely to warp.

ウエハホルダが反ると、ウエハとウエハホルダ間、及びウエハホルダとサセプタの間に隙間が発生し、ウエハを均一に加熱できない問題があった。ウエハを均一に加熱できないと堆積物の厚さがばらつく。また、ウエハホルダが反ると、ウエハホルダの自動搬送時の位置決めや搬送アーム上の安定保持ができない問題があった。   When the wafer holder is warped, gaps are generated between the wafer and the wafer holder, and between the wafer holder and the susceptor, and the wafer cannot be heated uniformly. If the wafer cannot be heated uniformly, the thickness of the deposit varies. Further, when the wafer holder is warped, there is a problem that the wafer holder cannot be positioned and automatically held on the transfer arm during automatic transfer.

ところが、本発明の実施の形態に係るウエハホルダ、成膜装置、成膜方法によれば、ウエハホルダの反りを抑制できる。本発明の実施の形態では、ウエハホルダ１０の両面を交互に使用して堆積を行うので、表面１０ａの堆積物７０による応力と裏面１０ｂの堆積物７２による応力が打ち消しあう。よって、ウエハホルダ１０の反りを抑制できる。また、裏面凹部１６を表面凹部１２の直下に形成して表面凹部１２と裏面凹部１６を同一形状としたので、表面１０ａの応力と裏面１０ｂの応力の分布を一致させてウエハホルダ１０の反りを抑制することができる。   However, according to the wafer holder, the film forming apparatus, and the film forming method according to the embodiment of the present invention, warpage of the wafer holder can be suppressed. In the embodiment of the present invention, the deposition is performed by alternately using both surfaces of the wafer holder 10, so that the stress caused by the deposit 70 on the front surface 10a and the stress caused by the deposit 72 on the back surface 10b cancel each other. Therefore, warpage of the wafer holder 10 can be suppressed. Further, since the back surface recess 16 is formed immediately below the front surface recess 12 and the front surface recess 12 and the back surface recess 16 have the same shape, the stress distribution on the front surface 10a and the stress distribution on the back surface 10b are matched to suppress warpage of the wafer holder 10. can do.

本発明の実施の形態に係るウエハホルダ１０にスリットを形成すると、反りの抑制効果を高めることができる。図６は、ウエハホルダに放射状のスリットを形成したことを示す平面図である。図６（Ａ）はウエハホルダ１００の表面１００ａを示し、図６（Ｂ）はウエハホルダ１００の裏面１００ｂを示す。スリット１０２は表面１００ａに放射状に形成されている。スリット１０４は裏面１００ｂに放射状に形成されている。スリット１０２、１０４は、堆積物による応力を緩和するので、ウエハホルダ１００の反りの抑制に効果的である。   When the slit is formed in the wafer holder 10 according to the embodiment of the present invention, the effect of suppressing warpage can be enhanced. FIG. 6 is a plan view showing that radial slits are formed in the wafer holder. 6A shows the front surface 100 a of the wafer holder 100, and FIG. 6B shows the back surface 100 b of the wafer holder 100. The slits 102 are formed radially on the surface 100a. The slits 104 are formed radially on the back surface 100b. Since the slits 102 and 104 relieve stress caused by the deposit, the slits 102 and 104 are effective in suppressing warpage of the wafer holder 100.

図７は、ウエハホルダの外周部分にスリットを形成したことを示す平面図である。図７（Ａ）はウエハホルダ１１０の表面１１０ａを示し、図７（Ｂ）はウエハホルダ１１０の裏面１１０ｂを示す。スリット１１２は表面１１０ａの外周部に形成されている。スリット１１４は裏面１１０ｂの外周部に形成されている。スリット１１２、１１４は、堆積物による応力を緩和するので、ウエハホルダ１１０の反りの抑制に効果的である。   FIG. 7 is a plan view showing that a slit is formed in the outer peripheral portion of the wafer holder. FIG. 7A shows the front surface 110 a of the wafer holder 110, and FIG. 7B shows the back surface 110 b of the wafer holder 110. The slit 112 is formed on the outer periphery of the surface 110a. The slit 114 is formed in the outer peripheral part of the back surface 110b. Since the slits 112 and 114 relieve stress caused by the deposits, the slits 112 and 114 are effective in suppressing warpage of the wafer holder 110.

図８は、ウエハホルダの側面にスリットを形成したことを示す断面図である。ウエハホルダ１２０の側面１２０ｃに、スリット１２２が形成されている。スリット１２２は、堆積物による応力を緩和するので、ウエハホルダ１２０の反りの抑制に効果的である。なお、スリットの形状は特に図６、７、８に示すスリットの形状に限定されない。   FIG. 8 is a cross-sectional view showing that a slit is formed on the side surface of the wafer holder. A slit 122 is formed on the side surface 120 c of the wafer holder 120. Since the slit 122 relieves stress due to the deposit, it is effective in suppressing warpage of the wafer holder 120. The slit shape is not particularly limited to the slit shape shown in FIGS.

本発明の実施の形態では、サセプタ５６の上に１つのウエハホルダをのせたが、複数のウエハホルダをサセプタの上にのせてもよい。また、ウエハホルダ１０を反転させるタイミングは適宜定めればよく、必ずしも１回の堆積処理ごとに反転させる必要はない。その他、本発明の特徴を失わない範囲において様々な変形が可能である。   In the embodiment of the present invention, one wafer holder is placed on the susceptor 56, but a plurality of wafer holders may be placed on the susceptor. In addition, the timing for reversing the wafer holder 10 may be determined as appropriate, and does not necessarily have to be reversed for each deposition process. In addition, various modifications can be made without departing from the characteristics of the present invention.

１０ ウエハホルダ、 １０ａ 表面、 １０ｂ 裏面、 １２ 表面凹部、 １６ 裏面凹部、 ５０ 成膜装置、 ５２ チャンバー、 ５４ ガス供給手段、 ５６ サセプタ、 ６０ 第１ウエハ、 ６２ 第２ウエハ、 ７０，７２ 堆積物、 １００ ウエハホルダ、 １００ａ 表面、 １００ｂ 裏面、 １０２，１０４ スリット、 １１０ ウエハホルダ、 １１０ａ 表面、 １１０ｂ 裏面、 １１２，１１４ スリット、 １２０ ウエハホルダ、 １２０ａ 表面、 １２０ｂ 裏面、 １２０ｃ 側面、 １２２ スリット   DESCRIPTION OF SYMBOLS 10 Wafer holder, 10a surface, 10b back surface, 12 surface recessed part, 16 back surface recessed part, 50 film-forming apparatus, 52 chamber, 54 gas supply means, 56 susceptor, 60 1st wafer, 62 2nd wafer, 70, 72 deposit, 100 Wafer holder, 100a surface, 100b back surface, 102, 104 slit, 110 Wafer holder, 110a surface, 110b back surface, 112, 114 slit, 120 Wafer holder, 120a surface, 120b back surface, 120c side surface, 122 slit

Claims (9)

ウエハをのせるウエハホルダであって、
前記ウエハホルダの表面に形成された、ウエハを収容する表面凹部と、
前記ウエハホルダの裏面に形成された、ウエハを収容する裏面凹部と、
を備えたことを特徴とするウエハホルダ。 A wafer holder for placing a wafer,
A surface recess formed on the surface of the wafer holder for accommodating the wafer;
A back surface recess formed on the back surface of the wafer holder for accommodating the wafer;
A wafer holder comprising: 前記裏面凹部は前記表面凹部の直下に形成されたことを特徴とする請求項１に記載のウエハホルダ。   The wafer holder according to claim 1, wherein the back surface recess is formed immediately below the front surface recess. 前記ウエハホルダの表面及び裏面にスリットが形成されたことを特徴とする請求項１又は２に記載のウエハホルダ。   The wafer holder according to claim 1, wherein slits are formed on a front surface and a back surface of the wafer holder. 前記ウエハホルダの側面にスリットが形成されたことを特徴とする請求項１乃至３のいずれか１項に記載のウエハホルダ。   The wafer holder according to claim 1, wherein a slit is formed on a side surface of the wafer holder. 金属材料で板状に形成されたサセプタと、
前記サセプタを加熱する手段と、
前記サセプタの上にのせられたウエハホルダと、を備え、
前記ウエハホルダは、表面にウエハを収容する表面凹部を有し、裏面にウエハを収容する裏面凹部を有することを特徴とする成膜装置。 A susceptor formed like a plate with a metal material;
Means for heating the susceptor;
A wafer holder placed on the susceptor,
The film forming apparatus, wherein the wafer holder has a front surface concave portion for accommodating a wafer on a front surface and a rear surface concave portion for accommodating a wafer on a rear surface. 前記裏面凹部は前記表面凹部の直下に形成されたことを特徴とする請求項５に記載の成膜装置。   The film forming apparatus according to claim 5, wherein the back surface recess is formed immediately below the front surface recess. 前記ウエハホルダの表面及び裏面にスリットが形成されたことを特徴とする請求項５又は６に記載の成膜装置。   The film forming apparatus according to claim 5, wherein slits are formed on a front surface and a back surface of the wafer holder. 前記ウエハホルダの側面にスリットが形成されたことを特徴とする請求項５乃至７のいずれか１項に記載の成膜装置。   The film forming apparatus according to claim 5, wherein a slit is formed on a side surface of the wafer holder. ウエハホルダの表面の表面凹部に第１ウエハを収容し、裏面凹部を有する前記ウエハホルダの裏面にサセプタを接触させる工程と、
前記第１ウエハ、及び前記ウエハホルダの表面に堆積物を堆積させる工程と、
前記堆積物の堆積した前記第１ウエハを前記表面凹部から取外す取外し工程と、
前記取外し工程の後に、前記ウエハホルダを反転させ、前記裏面凹部に第２ウエハを収容し、前記ウエハホルダの表面に前記サセプタを接触させる工程と、
前記第２ウエハ、及び前記ウエハホルダの裏面に堆積物を堆積させる工程と、
を備えたことを特徴とする成膜方法。 Storing the first wafer in the front surface recess of the front surface of the wafer holder and bringing the susceptor into contact with the back surface of the wafer holder having a back surface recess;
Depositing deposits on the surfaces of the first wafer and the wafer holder;
A removing step of removing the first wafer on which the deposit is deposited from the surface recess;
After the removing step, reversing the wafer holder, accommodating the second wafer in the back surface recess, and contacting the susceptor with the surface of the wafer holder;
Depositing a deposit on the back surface of the second wafer and the wafer holder;
A film forming method comprising:
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JP2016035080A (en) * 2014-08-01 2016-03-17 大陽日酸株式会社 Susceptor cover, and vapor phase growth apparatus including susceptor cover
JP2016046464A (en) * 2014-08-26 2016-04-04 株式会社ブリヂストン Susceptor
JP2016046463A (en) * 2014-08-26 2016-04-04 株式会社ブリヂストン Susceptor
WO2021081027A1 (en) * 2019-10-21 2021-04-29 Momentive Performance Materials Quartz, Inc. Wafer carrier for semiconductor processing

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JPS5654033A (en) * 1979-10-09 1981-05-13 Matsushita Electronics Corp Heater for substrate and chemical evaporation using said heater
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016035080A (en) * 2014-08-01 2016-03-17 大陽日酸株式会社 Susceptor cover, and vapor phase growth apparatus including susceptor cover
JP2016046464A (en) * 2014-08-26 2016-04-04 株式会社ブリヂストン Susceptor
JP2016046463A (en) * 2014-08-26 2016-04-04 株式会社ブリヂストン Susceptor
WO2021081027A1 (en) * 2019-10-21 2021-04-29 Momentive Performance Materials Quartz, Inc. Wafer carrier for semiconductor processing

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