JP2013157368A - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 264
- 238000003672 processing method Methods 0.000 title claims description 7
- 239000007788 liquid Substances 0.000 claims abstract description 117
- 210000000078 claw Anatomy 0.000 claims abstract description 56
- 238000012546 transfer Methods 0.000 claims abstract description 55
- 230000003028 elevating effect Effects 0.000 claims abstract description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 33
- 238000001035 drying Methods 0.000 description 24
- 239000000126 substance Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 12
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 10
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- 230000000052 comparative effect Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010129 solution processing Methods 0.000 description 4
- 230000006837 decompression Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008155 medical solution Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 238000005452 bending Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【解決手段】乾燥処理部3は、処理槽5と昇降部6とを備える。昇降部は、直立状態の基板9を下方から支持する爪部61が処理槽の底部近傍に配置される液処理位置と、爪部が処理槽の上部近傍に配置される受渡位置との間で基板を昇降する。一対の支持部材214により挟持される基板を、処理槽の上方である搬送位置と受渡位置との間で昇降する移載部211がさらに設けられる。液処理位置の基板の上下方向における中央位置での処理槽の内側面間距離が、両支持部材の幅の和を基板の直径に足した値よりも小さい。搬送位置から受渡位置へと基板を搬送する際には、処理液中に位置する爪部上に基板が載置されるため、スジ状の汚れが防止される。処理槽の小型化により処理液の消費量も削減される。
【選択図】図2
Description
4 チャンバ
5,5a 処理槽
6 昇降部
7 ガス噴出部
9 基板
10 制御部
211 移載部
214 支持部材
40 開口
50 内側面
53 ガイド
61 爪部
S11,S12 ステップ
Claims (6)
- 板状の基板を処理する基板処理装置であって、
処理液が貯溜される処理槽と、
前記処理槽内にて直立状態の基板を下方から支持する爪部を有し、前記爪部が前記処理槽の底部近傍に配置される液処理位置と、前記爪部が前記処理槽の上部近傍に配置される受渡位置との間で前記基板を昇降する昇降部と、
直立状態の基板の主面に沿う水平な幅方向の間隔が変更可能な一対の支持部材により、前記基板を支持するとともに、前記処理槽の上方である搬送位置と前記受渡位置との間で前記基板を昇降する移載部と、
前記移載部により前記搬送位置から前記受渡位置へと基板を搬送して、前記処理液中に位置する前記爪部上に前記基板を載置する制御部と、
を備え、
前記液処理位置に配置された基板の上下方向における少なくとも中央位置において、前記幅方向における前記処理槽の内側面間距離が、前記移載部の両支持部材の幅の和を前記基板の幅に足した値である支持部材−基板合計幅よりも小さいことを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記処理槽の前記上部の前記内側面間距離が、前記一対の支持部材による基板の支持および解放が可能な幅であり、
前記液処理位置に配置された基板の前記上下方向における前記中央位置から下側において、前記処理槽の前記内側面間距離が前記支持部材−基板合計幅よりも小さいことを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記上下方向における前記処理槽の全体において、前記内側面間距離が前記支持部材−基板合計幅よりも小さいことを特徴とする基板処理装置。 - 請求項1ないし3のいずれかに記載の基板処理装置であって、
互いに平行に並んだ直立状態の複数の基板が前記爪部により支持され、
前記処理槽が、前記液処理位置に配置された前記複数の基板の前記上下方向における中央位置において前記複数の基板の外縁部を支持するガイドを有することを特徴とする基板処理装置。 - 請求項1ないし4のいずれかに記載の基板処理装置であって、
内部に前記処理槽が配置され、上部に開閉可能な開口を有するチャンバと、
前記処理槽内の前記処理液が排出された状態にて、前記受渡位置に配置された基板に向けて処理ガスを噴出するガス噴出部と、
をさらに備え、
前記搬送位置が前記チャンバの上方であり、
前記上下方向における前記液処理位置と前記受渡位置との間の距離が、基板の幅よりも小さいことを特徴とする基板処理装置。 - 基板処理装置において板状の基板を処理する基板処理方法であって、
前記基板処理装置が、
処理槽と、
前記処理槽内にて直立状態の基板を下方から支持する爪部を有し、前記爪部が前記処理槽の底部近傍に配置される液処理位置と、前記爪部が前記処理槽の上部近傍に配置される受渡位置との間で前記基板を昇降する昇降部と、
直立状態の基板の主面に沿う水平な幅方向の間隔が変更可能な一対の支持部材により、前記基板を支持するとともに、前記処理槽の上方である搬送位置と前記受渡位置との間で前記基板を昇降する移載部と、
を備え、
前記液処理位置に配置された基板の上下方向における少なくとも中央位置において、前記幅方向における前記処理槽の内側面間距離が、前記移載部の両支持部材の幅の和を前記基板の幅に足した値である支持部材−基板合計幅よりも小さく、
前記基板処理方法が、
a)前記処理槽内に処理液を貯溜する工程と、
b)前記移載部により前記搬送位置から前記受渡位置へと基板を搬送して、前記処理液中に位置する前記爪部上に前記基板を載置する工程と、
を備えることを特徴とする基板処理方法。
Priority Applications (3)
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JP2012014887A JP5952007B2 (ja) | 2012-01-27 | 2012-01-27 | 基板処理装置および基板処理方法 |
TW102101315A TWI508210B (zh) | 2012-01-27 | 2013-01-14 | 基板處理裝置及基板處理方法 |
KR1020130007386A KR20130087417A (ko) | 2012-01-27 | 2013-01-23 | 기판 처리 장치 및 기판 처리 방법 |
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JP5952007B2 JP5952007B2 (ja) | 2016-07-13 |
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US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
JP6617036B2 (ja) * | 2016-01-18 | 2019-12-04 | 株式会社Screenホールディングス | 基板処理装置 |
CN111244022B (zh) * | 2020-01-22 | 2023-02-10 | 北京北方华创微电子装备有限公司 | 晶圆盒夹持装置及晶圆清洗机 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07130722A (ja) * | 1993-11-08 | 1995-05-19 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH07307374A (ja) * | 1994-05-10 | 1995-11-21 | Dainippon Screen Mfg Co Ltd | 基板保持チャック、基板保持ユニット及び基板処理装置 |
JPH11340176A (ja) * | 1998-05-25 | 1999-12-10 | Dainippon Screen Mfg Co Ltd | 浸漬型基板処理装置 |
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JP3548416B2 (ja) * | 1998-03-24 | 2004-07-28 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2000150438A (ja) * | 1998-11-16 | 2000-05-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07130722A (ja) * | 1993-11-08 | 1995-05-19 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH07307374A (ja) * | 1994-05-10 | 1995-11-21 | Dainippon Screen Mfg Co Ltd | 基板保持チャック、基板保持ユニット及び基板処理装置 |
JPH11340176A (ja) * | 1998-05-25 | 1999-12-10 | Dainippon Screen Mfg Co Ltd | 浸漬型基板処理装置 |
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JP5952007B2 (ja) | 2016-07-13 |
TW201340232A (zh) | 2013-10-01 |
TWI508210B (zh) | 2015-11-11 |
KR20130087417A (ko) | 2013-08-06 |
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