JP2013135224A - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP2013135224A JP2013135224A JP2012274503A JP2012274503A JP2013135224A JP 2013135224 A JP2013135224 A JP 2013135224A JP 2012274503 A JP2012274503 A JP 2012274503A JP 2012274503 A JP2012274503 A JP 2012274503A JP 2013135224 A JP2013135224 A JP 2013135224A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- light emitting
- layers
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 123
- 238000000605 extraction Methods 0.000 claims abstract description 112
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 427
- 239000000758 substrate Substances 0.000 description 40
- 239000000463 material Substances 0.000 description 38
- 230000003287 optical effect Effects 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 11
- 230000007480 spreading Effects 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910019897 RuOx Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 229910018229 Al—Ga Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/007—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of negative effective refractive index materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
【解決手段】発光素子は、少なくとも第1導電型半導体層13、活性層15、及び第2導電型半導体層17を含む発光構造物19と、発光構造物の上に光抽出構造物27を含む。光抽出構造物は、金属層23a、23bと誘電層25が積層により形成され、負の屈折率を有するように互いに交互に積層された多数の金属と多数の誘電層とを含むため、光が内部に反射されず、外部に反射されるように光抽出効率を極大化することができる。
【選択図】図1
Description
Claims (18)
- 多数の化合物半導体層を含む発光構造物と、
前記発光構造物の上にある光抽出構造物と、を含み、
前記光抽出構造物は、
負の屈折率を有するように互いに交互に積層された多数の第1層と多数の第2層とを含むことを特徴とする、発光素子。 - 前記化合物半導体層は、
活性層と、
前記活性層の下にある第1導電型半導体層と、
前記活性層の上にある第2導電型半導体層と、
を含むことを特徴とする、請求項1に記載の発光素子。 - 前記光抽出構造物は、前記第1及び第2導電型半導体層のうちの1つの層の上に配置されることを特徴とする、請求項2に記載の発光素子。
- 前記第1層は誘電層であり、前記第2層は金属層であることを特徴とする、請求項1乃至請求項3のうち、いずれか1項に記載の発光素子。
- 前記誘電層は導電層であることを特徴とする、請求項4に記載の発光素子。
- 前記第1層は前記光抽出構造物の最下層であり、
前記第2層は前記光抽出構造物の最上層であることを特徴とする、請求項1乃至請求項5のうち、いずれか1項に記載の発光素子。 - 前記第1及び第2層の各々の厚さは0.2λp(λpは前記第2層のプラズマ周波数である)であることを特徴とする、請求項1乃至請求項6のうち、いずれか1項に記載の発光素子。
- 前記第1及び第2層のうち、上位層は下位層の上面と側面を覆って、前記上位層から延びた一側端は前記第1及び第2導電型半導体層のうちの1つの層の上面に接することを特徴とする、請求項1乃至請求項7のうち、いずれか1項に記載の発光素子。
- 垂直方向での前記第1及び第2層の各々は同一な厚さを有することを特徴とする、請求項8に記載の発光素子。
- 水平方向での前記第1及び第2層の各々は同一な幅を有することを特徴とする、請求項9に記載の発光素子。
- 前記第1及び第2層の幅は前記第1及び第2層の厚さより大きいことを特徴とする、請求項10に記載の発光素子。
- 垂直方向での前記第1及び第2層の各々は相異する厚さを有することを特徴とする、請求項8に記載の発光素子。
- 水平方向での前記第1及び第2層の各々は相異する幅を有することを特徴とする、請求項12に記載の発光素子。
- 前記第1及び第2層の幅は前記第1及び第2層の厚さより大きいことを特徴とする、請求項13に記載の発光素子。
- 前記上位層の一側端が前記第1層の場合、前記上位層の一側端は前記第1及び第2導電型半導体層のうち、1つの層に対してオーミックコンタクトを形成することを特徴とする、請求項8に記載の発光素子。
- 前記上位層の一側端が前記第2層の場合、前記上位層の一側端は前記第1及び第2導電型半導体層のうち、1つの層に対してショットキーコンタクトを形成することを特徴とする、請求項8に記載の発光素子。
- 前記発光構造物から前記光抽出構造物に入射された光は前記光抽出構造物の垂直境界面を基準に外部に反射されることを特徴とする、請求項1乃至請求項16のうち、いずれか1項に記載の発光素子。
- 前記発光構造物は365nm乃至488nmの紫外線光を生成することを特徴とする、請求項1乃至17のうち、いずれか1項に記載の発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110141952A KR101984672B1 (ko) | 2011-12-26 | 2011-12-26 | 발광 소자 |
KR10-2011-0142676 | 2011-12-26 | ||
KR10-2011-0141952 | 2011-12-26 | ||
KR1020110142676A KR101946837B1 (ko) | 2011-12-26 | 2011-12-26 | 발광 소자 및 이를 구비한 라이트 유닛 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013135224A true JP2013135224A (ja) | 2013-07-08 |
JP6133588B2 JP6133588B2 (ja) | 2017-05-24 |
Family
ID=47602912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012274503A Active JP6133588B2 (ja) | 2011-12-26 | 2012-12-17 | 発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8809885B2 (ja) |
EP (1) | EP2610929B1 (ja) |
JP (1) | JP6133588B2 (ja) |
CN (1) | CN103178185B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014120774A (ja) * | 2012-12-18 | 2014-06-30 | Seoul Viosys Co Ltd | 高効率発光ダイオード |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201438199A (zh) * | 2013-03-29 | 2014-10-01 | Hon Hai Prec Ind Co Ltd | 主動式固態發光顯示器 |
TW201438289A (zh) * | 2013-03-29 | 2014-10-01 | Lextar Electronics Corp | 半導體發光元件及其封裝結構 |
JP6221926B2 (ja) * | 2013-05-17 | 2017-11-01 | 日亜化学工業株式会社 | 半導体発光素子およびその製造方法 |
KR20160034534A (ko) | 2014-09-19 | 2016-03-30 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102147443B1 (ko) | 2018-10-25 | 2020-08-28 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
CH716957A2 (fr) | 2019-12-16 | 2021-06-30 | Eta Sa Mft Horlogere Suisse | Dispositif de guidage pour afficheur d'horlogerie. |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080043475A1 (en) * | 2006-06-21 | 2008-02-21 | Advantech Global, Ltd. | System and method for total light extraction from flat-panel light-emitting devices |
JP2010080741A (ja) * | 2008-09-26 | 2010-04-08 | Sharp Corp | 半導体発光素子 |
EP2187454A2 (en) * | 2008-11-18 | 2010-05-19 | LG Innotek Co., Ltd. | Semiconductor light-emitting device |
JP2010123193A (ja) * | 2008-11-19 | 2010-06-03 | Toshiba Corp | 光で情報を記録する光記録システム |
JP2011205099A (ja) * | 2010-03-25 | 2011-10-13 | Lg Innotek Co Ltd | 発光素子、発光素子パッケージ、及び照明システム |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
WO2010065071A2 (en) * | 2008-11-25 | 2010-06-10 | Regents Of The University Of Minnesota | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
-
2012
- 2012-12-13 EP EP12197076.8A patent/EP2610929B1/en active Active
- 2012-12-17 JP JP2012274503A patent/JP6133588B2/ja active Active
- 2012-12-21 US US13/724,398 patent/US8809885B2/en active Active
- 2012-12-26 CN CN201210574519.1A patent/CN103178185B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080043475A1 (en) * | 2006-06-21 | 2008-02-21 | Advantech Global, Ltd. | System and method for total light extraction from flat-panel light-emitting devices |
JP2010080741A (ja) * | 2008-09-26 | 2010-04-08 | Sharp Corp | 半導体発光素子 |
EP2187454A2 (en) * | 2008-11-18 | 2010-05-19 | LG Innotek Co., Ltd. | Semiconductor light-emitting device |
JP2010123193A (ja) * | 2008-11-19 | 2010-06-03 | Toshiba Corp | 光で情報を記録する光記録システム |
JP2011205099A (ja) * | 2010-03-25 | 2011-10-13 | Lg Innotek Co Ltd | 発光素子、発光素子パッケージ、及び照明システム |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014120774A (ja) * | 2012-12-18 | 2014-06-30 | Seoul Viosys Co Ltd | 高効率発光ダイオード |
Also Published As
Publication number | Publication date |
---|---|
EP2610929A3 (en) | 2015-11-18 |
EP2610929B1 (en) | 2019-09-18 |
US8809885B2 (en) | 2014-08-19 |
JP6133588B2 (ja) | 2017-05-24 |
CN103178185A (zh) | 2013-06-26 |
US20130161675A1 (en) | 2013-06-27 |
CN103178185B (zh) | 2017-08-01 |
EP2610929A2 (en) | 2013-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6133588B2 (ja) | 発光素子 | |
JP2011192999A (ja) | 発光素子 | |
JP2011216891A (ja) | 発光素子パッケージ及び照明システム | |
KR20130021300A (ko) | 발광소자, 발광소자 패키지, 및 라이트 유닛 | |
KR101865918B1 (ko) | 발광소자, 발광 소자 제조방법 및 발광 소자 패키지 | |
KR20130021296A (ko) | 발광소자, 발광소자 패키지, 및 라이트 유닛 | |
KR20130027275A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101843420B1 (ko) | 발광소자, 발광 소자 제조방법 및 발광 소자 패키지 | |
KR101984672B1 (ko) | 발광 소자 | |
KR20130067770A (ko) | 발광 소자 | |
KR20130045686A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130065327A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101946837B1 (ko) | 발광 소자 및 이를 구비한 라이트 유닛 | |
KR20130029543A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101852566B1 (ko) | 발광소자, 발광소자 패키지, 및 라이트 유닛 | |
KR20130031525A (ko) | 발광소자, 발광소자 패키지, 라이트 유닛 | |
KR101869553B1 (ko) | 발광소자, 발광소자 패키지, 및 라이트 유닛 | |
KR101956016B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130072753A (ko) | 발광소자, 발광 소자 제조방법 및 발광 소자 패키지 | |
KR20120139128A (ko) | 발광소자, 발광 소자 제조방법 및 발광 소자 패키지 | |
KR101842594B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101865923B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR102251120B1 (ko) | 발광소자 | |
KR102070208B1 (ko) | 발광소자 | |
KR101856215B1 (ko) | 발광소자 및 발광 소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151202 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160729 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160816 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161115 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170404 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170420 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6133588 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |