CN103178185B - 发光器件 - Google Patents
发光器件 Download PDFInfo
- Publication number
- CN103178185B CN103178185B CN201210574519.1A CN201210574519A CN103178185B CN 103178185 B CN103178185 B CN 103178185B CN 201210574519 A CN201210574519 A CN 201210574519A CN 103178185 B CN103178185 B CN 103178185B
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- luminescent device
- light extraction
- conductive semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 137
- 238000000605 extraction Methods 0.000 claims abstract description 119
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 98
- 239000002184 metal Substances 0.000 claims description 98
- 239000000463 material Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000012780 transparent material Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 363
- 239000000758 substrate Substances 0.000 description 45
- 230000003287 optical effect Effects 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- 230000005611 electricity Effects 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910019897 RuOx Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910020776 SixNy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910018229 Al—Ga Inorganic materials 0.000 description 2
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 Polyethylene terephthalate Polymers 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000004651 carbonic acid esters Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/007—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of negative effective refractive index materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110141952A KR101984672B1 (ko) | 2011-12-26 | 2011-12-26 | 발광 소자 |
KR10-2011-0142676 | 2011-12-26 | ||
KR10-2011-0141952 | 2011-12-26 | ||
KR1020110142676A KR101946837B1 (ko) | 2011-12-26 | 2011-12-26 | 발광 소자 및 이를 구비한 라이트 유닛 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103178185A CN103178185A (zh) | 2013-06-26 |
CN103178185B true CN103178185B (zh) | 2017-08-01 |
Family
ID=47602912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210574519.1A Active CN103178185B (zh) | 2011-12-26 | 2012-12-26 | 发光器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8809885B2 (zh) |
EP (1) | EP2610929B1 (zh) |
JP (1) | JP6133588B2 (zh) |
CN (1) | CN103178185B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140078977A (ko) * | 2012-12-18 | 2014-06-26 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
TW201438199A (zh) * | 2013-03-29 | 2014-10-01 | Hon Hai Prec Ind Co Ltd | 主動式固態發光顯示器 |
TW201438289A (zh) * | 2013-03-29 | 2014-10-01 | Lextar Electronics Corp | 半導體發光元件及其封裝結構 |
JP6221926B2 (ja) * | 2013-05-17 | 2017-11-01 | 日亜化学工業株式会社 | 半導体発光素子およびその製造方法 |
KR20160034534A (ko) | 2014-09-19 | 2016-03-30 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102147443B1 (ko) | 2018-10-25 | 2020-08-28 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
CH716957A2 (fr) | 2019-12-16 | 2021-06-30 | Eta Sa Mft Horlogere Suisse | Dispositif de guidage pour afficheur d'horlogerie. |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010065071A2 (en) * | 2008-11-25 | 2010-06-10 | Regents Of The University Of Minnesota | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
CN101764186A (zh) * | 2008-11-18 | 2010-06-30 | Lg伊诺特有限公司 | 半导体发光器件 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7535171B2 (en) * | 2006-06-21 | 2009-05-19 | Advantech Global, Ltd. | System and method for total light extraction from flat-panel light-emitting devices |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
JP2010080741A (ja) * | 2008-09-26 | 2010-04-08 | Sharp Corp | 半導体発光素子 |
JP2010123193A (ja) * | 2008-11-19 | 2010-06-03 | Toshiba Corp | 光で情報を記録する光記録システム |
KR101039937B1 (ko) * | 2010-04-28 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템 |
-
2012
- 2012-12-13 EP EP12197076.8A patent/EP2610929B1/en active Active
- 2012-12-17 JP JP2012274503A patent/JP6133588B2/ja active Active
- 2012-12-21 US US13/724,398 patent/US8809885B2/en active Active
- 2012-12-26 CN CN201210574519.1A patent/CN103178185B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764186A (zh) * | 2008-11-18 | 2010-06-30 | Lg伊诺特有限公司 | 半导体发光器件 |
WO2010065071A2 (en) * | 2008-11-25 | 2010-06-10 | Regents Of The University Of Minnesota | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
Non-Patent Citations (1)
Title |
---|
Three-Dimensional Negative Index of Refraction at Optical Frequencies by Coupling Plasmonic Waveguides;Ewold Verhagen, et al;《PHYSICAL REVIEW LETTERS》;20101126;第105卷(第22期);第2页第2栏第3行至第3页第1栏第39行,图3,4 * |
Also Published As
Publication number | Publication date |
---|---|
EP2610929A3 (en) | 2015-11-18 |
EP2610929B1 (en) | 2019-09-18 |
US8809885B2 (en) | 2014-08-19 |
JP6133588B2 (ja) | 2017-05-24 |
CN103178185A (zh) | 2013-06-26 |
JP2013135224A (ja) | 2013-07-08 |
US20130161675A1 (en) | 2013-06-27 |
EP2610929A2 (en) | 2013-07-03 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210820 Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Leyu Semiconductor Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG INNOTEK Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Liyu Semiconductor Co.,Ltd. Country or region after: China Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee before: Suzhou Leyu Semiconductor Co.,Ltd. Country or region before: China |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240314 Address after: Room 01-05, 32nd Floor, Zhongxin Building, 15 Moon Bay Road, Suzhou Industrial Park, Jiangsu Province Patentee after: FOCUS LIGHTINGS TECH Co.,Ltd. Country or region after: China Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee before: Suzhou Liyu Semiconductor Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |