JP2013131748A - 放熱基板及び放熱基板の製造方法 - Google Patents
放熱基板及び放熱基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 230000005855 radiation Effects 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- 239000010410 layer Substances 0.000 claims abstract description 105
- 239000011247 coating layer Substances 0.000 claims abstract description 52
- 239000012811 non-conductive material Substances 0.000 claims abstract description 29
- 239000000945 filler Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000007769 metal material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 50
- 230000017525 heat dissipation Effects 0.000 claims description 44
- 238000005553 drilling Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000007743 anodising Methods 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000004080 punching Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 238000012993 chemical processing Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000454 electroless metal deposition Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
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Abstract
【解決手段】本発明による放熱基板は、金属材質で構成され、一つ以上のビアホールが形成された基板と、前記基板の表面に形成された絶縁層と、前記ビアホールの内壁面に形成された伝導性または非伝導性材質のコーティング層と、前記絶縁層上に形成され、電気的に互いに分離した複数の金属パターンと、前記金属パターンから延長されて前記ビアホールの内壁面のコーティング層上に形成された金属層と、前記ビアホール内の前記金属層の間に充填される非伝導性材質の充填材と、を含む。
【選択図】図1
Description
111 ビアホール
120 絶縁層
130 コーティング層
140 金属層
150 金属パターン
160 充填材
Claims (13)
- 金属材質で構成され、一つ以上のビアホールが形成された基板と、
前記基板の表面に形成された絶縁層と、
前記ビアホールの内壁面に形成された伝導性または非伝導性材質のコーティング層と、
前記絶縁層上に形成され、電気的に互いに分離した複数の金属パターンと、
前記金属パターンから延長されて前記ビアホールの内壁面のコーティング層上に形成された金属層と、
前記ビアホール内の前記金属層の間に充填される非伝導性材質の充填材と、
を含む放熱基板。 - 前記基板は、熱伝導度に優れた金属材質で構成され、
前記金属は、アルミニウム(Al)である請求項1に記載の放熱基板。 - 前記基板の表面に形成された絶縁層は、アノダイジング処理による酸化皮膜層(Al2O3)で構成される請求項1に記載の放熱基板。
- 前記ビアホールは、ドリリング、パンチングなどの機械的加工法またはエッチングなどの化学的加工法により形成される請求項1に記載の放熱基板。
- 前記金属パターンは、前記絶縁層の一部分が除去されて、前記基板の上面が露出した部位に形成される請求項1に記載の放熱基板。
- 前記充填材は、非伝導性材質のエポキシまたはポリマーで構成される請求項1に記載の放熱基板。
- 金属基板を準備し、前記金属基板を貫通する一つ以上のビアホールを形成する段階と、
前記ビアホールを含む前記金属基板の表面に絶縁層を形成する段階と、
前記絶縁層が形成された前記ビアホールの内壁面に非伝導性材質のコーティング層を形成する段階と、
前記ビアホールの内壁面に形成された前記コーティング層及び前記金属基板の表面に形成された絶縁層の上に、金属層を形成する段階と、
前記金属基板の表面の絶縁層上に形成された前記金属層をパターニングして、複数の金属パターンを形成する段階と、
前記ビアホールの内壁面に形成されたコーティング層の間に非伝導性材質の充填材が注入される段階と、
を含む放熱基板の製造方法。 - 前記金属基板の表面に絶縁層を形成する段階において、
前記絶縁層は、アノダイジング処理による酸化皮膜層で構成される請求項7に記載の放熱基板の製造方法。 - 前記ビアホールの内壁面にコーティング層を形成する段階は、
非伝導性材料がプラギング(plugging)工程によって前記ビアホールの内部に充填される段階と、
前記ビアホールの内部に充填された非伝導性材料に貫通孔を形成する段階と、
を含む請求項7に記載の放熱基板の製造方法。 - 前記ビアホールの内部に充填された非伝導性材料は、エポキシまたはポリマーの何れか一つで構成されることができ、
前記貫通孔は、ドリリングまたはレーザー加工法により形成される請求項1に記載の放熱基板の製造方法。 - 金属基板を準備し、前記金属基板を貫通する一つ以上のビアホールを形成する段階と、
前記ビアホールを含む前記金属基板の表面に絶縁層を形成する段階と、
前記絶縁層が形成された前記ビアホールの内壁面に伝導性材質のコーティング層を形成する段階と、
前記ビアホールの内壁面に形成された前記コーティング層及び前記金属基板の表面に形成された絶縁層の上に、金属層を形成する段階と、
前記金属基板の表面の絶縁層上に形成された前記金属層をパターニングして、複数の金属パターンを形成する段階と、
前記ビアホールの内壁面に形成されたコーティング層の間に非伝導性材質の充填材が注入される段階と、
を含む放熱基板の製造方法。 - 前記ビアホールの内壁面にコーティング層を形成する段階は、
伝導性材料及びめっき工程を用いて前記ビアホールの内部がフィル(fill)めっきされる段階と、
前記ビアホールの内部にフィルめっきされた伝導性材料に貫通孔を形成する段階と、
を含む請求項11に記載の放熱基板の製造方法。 - 前記ビアホールの内壁面にコーティング層を形成する段階において、
前記コーティング層は、伝導性材料及びめっき工程を用いて前記ビアホールの内壁面にのみシード層として形成される請求項11に記載の放熱基板の製造方法。
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KR10-2011-0139245 | 2011-12-21 | ||
KR1020110139245A KR101332032B1 (ko) | 2011-12-21 | 2011-12-21 | 방열기판 및 방열기판의 제조방법 |
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WO2022153107A1 (en) * | 2021-01-12 | 2022-07-21 | Molex, Llc | Heat radiator and electronic component module |
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US9706667B2 (en) * | 2014-05-19 | 2017-07-11 | Sierra Circuits, Inc. | Via in a printed circuit board |
DE102014116529A1 (de) | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102015108345A1 (de) * | 2015-05-27 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
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DE102018131386A1 (de) * | 2018-12-07 | 2020-06-10 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil |
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CN112474592B (zh) * | 2020-11-09 | 2021-11-05 | 西北工业大学 | 一种机载设备自清洁降温装置及方法 |
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- 2012-12-20 US US13/722,219 patent/US20130160978A1/en not_active Abandoned
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JP2019531584A (ja) * | 2016-08-30 | 2019-10-31 | イーセブン システムズ テクノロジー マネジメント リミテッドE−Seven Systems Technology Management Ltd | バッテリーセルを接続するための基板およびバッテリー |
WO2022153107A1 (en) * | 2021-01-12 | 2022-07-21 | Molex, Llc | Heat radiator and electronic component module |
Also Published As
Publication number | Publication date |
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KR20130071812A (ko) | 2013-07-01 |
KR101332032B1 (ko) | 2013-11-22 |
US20130160978A1 (en) | 2013-06-27 |
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