JP2013124215A - SiC結晶の結晶成長方法およびSiC結晶基板 - Google Patents
SiC結晶の結晶成長方法およびSiC結晶基板 Download PDFInfo
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Abstract
【解決手段】SiC結晶を種結晶にしてSiC結晶をエピタキシャル成長させる結晶成長方法を提供する。この方法では、種結晶に用いるSiC結晶を真空中で加熱して表面を構成しているSiを昇華させてCを主体とする膜を形成する工程が付加されている。その工程を経たSiC結晶を種結晶にしてSiC結晶をエピタキシャル成長させる。
【選択図】図2
Description
本実施例に係るSiC結晶の製造方法の効果を説明する。本実施例の結晶成長方法では、SiC種結晶25の表面にグラフェン層26を形成する工程を備えている。そして、グラフェン層26の表面を起点としてSiC結晶を成長させることにより、グラフェン層26の下方に存在するSiC種結晶25の原子配列に従うように、SiC結晶をエピタキシャル成長させることができる。これにより、SiC種結晶25の表面に表出している欠陥に起因して、成長したSiC結晶にも欠陥が引き継がれてしまうことを防止できる。よって、SiC種結晶25よりも結晶欠陥を減少させたエピタキシャル成長層27を、液層法を用いて製造することが可能となる。
ステップS4において、SiC種結晶25のグラフェン層26の表面にSiC結晶を成長させる方法は、液相成長法に限られない。昇華再結晶化法やCVD(Chemical Vapor Deposition)法を用いる場合においても、SiC種結晶よりも結晶欠陥を減少させたエピタキシャル成長層を成長させることが可能である。
Claims (5)
- SiC結晶を種結晶にしてSiC結晶をエピタキシャル成長させる結晶成長方法であり、
種結晶に用いるSiC結晶を真空中で加熱して表面を構成しているSiを昇華させてCを主体とする膜を形成する工程が付加されており、
その工程を経たSiC結晶を種結晶にしてSiC結晶をエピタキシャル成長させる結晶成長方法。 - Cを主体とする膜が形成されている種結晶に用いるSiC結晶と、シリコンの融液を溶媒とするSiC溶液とを接触させて、SiC結晶をエピタキシャル成長させることを特徴とする請求項1に記載の結晶成長方法。
- 6H−SiCまたは4H−SiCのSiC結晶を種結晶に用いることを特徴とする請求項1または2に記載の結晶成長方法。
- 第1のSiC結晶層と、少なくとも1層のグラフェン(graphene)と、第2のSiC結晶層が順に積層しているSiC結晶基板であって、
第1のSiC結晶層の欠陥密度に比して第2のSiC結晶層の欠陥密度が小さいことを特徴とするSiC結晶基板。 - グラフェン1層中のC原子の数密度は、SiC結晶層のバイレイヤ1層中のC原子の数密度よりも大きいことを特徴とする請求項4に記載のSiC結晶基板。
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JP2011275589A JP5829508B2 (ja) | 2011-12-16 | 2011-12-16 | SiC結晶の結晶成長方法およびSiC結晶基板 |
PCT/JP2012/080590 WO2013088948A1 (ja) | 2011-12-16 | 2012-11-27 | SiC結晶の結晶成長方法およびSiC結晶基板 |
TW101147322A TW201333246A (zh) | 2011-12-16 | 2012-12-14 | SiC結晶之結晶成長方法及SiC結晶基板 |
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WO2022163052A1 (ja) * | 2021-02-01 | 2022-08-04 | ローム株式会社 | SiCエピタキシャルウェハの製造装置、及びSiCエピタキシャルウェハの製造方法 |
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WO2017044577A1 (en) * | 2015-09-08 | 2017-03-16 | Massachusetts Institute Of Technology | Systems and methods for graphene based layer transfer |
WO2018089444A1 (en) | 2016-11-08 | 2018-05-17 | Massachusetts Institute Of Technology | Systems and methods of dislocation filtering for layer transfer |
CN108166058A (zh) * | 2016-12-07 | 2018-06-15 | 上海新昇半导体科技有限公司 | 4H-SiC晶体生长方法 |
WO2018156877A1 (en) | 2017-02-24 | 2018-08-30 | Massachusetts Institute Of Technology | Apparatus and methods for curved focal plane array |
CN109797374A (zh) * | 2019-01-15 | 2019-05-24 | 芜湖启迪半导体有限公司 | 一种碳化硅衬底的制备方法及其批量制备方法 |
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JP2010132464A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | 炭化珪素単結晶の製造方法 |
JP2010189246A (ja) * | 2009-02-20 | 2010-09-02 | Toyota Motor Corp | SiC単結晶の接着方法及びSiC単結晶の溶液成長法 |
JP2011121815A (ja) * | 2009-12-10 | 2011-06-23 | Sumitomo Electric Ind Ltd | 単結晶の製造方法 |
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JP5540349B2 (ja) * | 2009-12-02 | 2014-07-02 | 学校法人関西学院 | 半導体ウエハの製造方法 |
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JP2010189246A (ja) * | 2009-02-20 | 2010-09-02 | Toyota Motor Corp | SiC単結晶の接着方法及びSiC単結晶の溶液成長法 |
JP2011121815A (ja) * | 2009-12-10 | 2011-06-23 | Sumitomo Electric Ind Ltd | 単結晶の製造方法 |
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