JP2013115088A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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JP2013115088A
JP2013115088A JP2011257277A JP2011257277A JP2013115088A JP 2013115088 A JP2013115088 A JP 2013115088A JP 2011257277 A JP2011257277 A JP 2011257277A JP 2011257277 A JP2011257277 A JP 2011257277A JP 2013115088 A JP2013115088 A JP 2013115088A
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led
light
led device
layer
light emitting
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Hiroshi Tsukada
浩 塚田
Hiroyuki Tsukada
浩之 塚田
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

PROBLEM TO BE SOLVED: To provide an LED device including a reflection member on an upper part and emitting light from a lateral face, which can easily control chromaticity.SOLUTION: An LED device 10 comprises: an LED die 20 mounted on a circuit board 3 and covered with a phosphor layer 16 having a predetermined thickness; a transparent layer 12 covering the phosphor layer 16; and a reflection member 11 contacting an upper part of the transparent layer 12. Because practical accuracy of chromaticity of the LED device 10 depends on an emission spectrum of the LED die 20, and a fluorescent material concentration and a thickness of the phosphor layer 16, chromaticity is not changed though the size of the LED device 10 is changed by adjustment of the transparent layer 12.

Description

本発明は、回路基板上に実装した半導体発光素子を透光性部材により被覆し、その上部に反射部材を備えた半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device in which a semiconductor light emitting element mounted on a circuit board is covered with a translucent member and a reflective member is provided on the upper part.

ウェハーから切り出された半導体発光素子（以後とくに断らない限りＬＥＤダイと呼ぶ）を回路基板に実装し、樹脂やガラス等の透光性部材で被覆してパッケージ化した半導体発光装置（以後とくに断らない限りＬＥＤ装置と呼ぶ）が普及している。このＬＥＤ装置をマザー基板に配列し平面型の照明装置を構成する場合、ＬＥＤ装置が照明装置の前方に向かって強い指向性を持つため、レンズ等を使ってＬＥＤ装置の放射光を広げようとすることがある。しかしながらＬＥＤ装置とレンズを積層すると照明装置が厚くなってしまう。   A semiconductor light emitting device cut from a wafer (hereinafter referred to as an LED die unless otherwise specified) is mounted on a circuit board and covered with a light-transmitting member such as resin or glass and packaged (hereinafter not particularly specified). As long as it is called an LED device). When this LED device is arranged on a mother board to form a flat illumination device, the LED device has a strong directivity toward the front of the illumination device, so it is intended to spread the emitted light of the LED device using a lens or the like. There are things to do. However, when the LED device and the lens are stacked, the lighting device becomes thick.

これに対し照明装置の側方にだけ光を放射するＬＥＤ装置をマザー基板に実装し、このＬＥＤ装置と隣接するように反射体や導光板などの光学部材を配置し照明装置を薄型化することがある。この照明装置は、ＬＥＤ装置内において照明装置の前方に向かおうとする光線をＬＥＤ装置の上部に配置した反射部材により照明装置の側方側に向かわせ、ＬＥＤ装置の側方から出射する光を光学部材により照明装置の前方に向けるものである。このようにすると広い面積で均一な発光面を確保できるとともに、光学部材をＬＥＤ装置と積層していないため薄型化が達成できる。またレンズを使用しないことにより部材の費用を抑えることができる。   On the other hand, an LED device that emits light only to the side of the lighting device is mounted on the mother board, and an optical member such as a reflector or a light guide plate is disposed adjacent to the LED device to make the lighting device thinner. There is. In this lighting device, a light beam directed to the front of the lighting device in the LED device is directed to the side of the lighting device by a reflecting member arranged at the top of the LED device, and light emitted from the side of the LED device is emitted. The optical member is directed to the front of the lighting device. In this way, a uniform light-emitting surface can be ensured over a wide area, and a reduction in thickness can be achieved because the optical member is not laminated with the LED device. Moreover, the cost of a member can be held down by not using a lens.

この照明装置に使用されるＬＥＤ装置は例えば特許文献１の図１に示されている。特許文献１の図１で示されている発光ダイオード１０（ＬＥＤ装置）は、絶縁基板１（回路基板）上にＬＥＤチップ２（ＬＥＤダイ）を固定し、そのＬＥＤチップ２を透光性樹脂層３により封止している。さらに透光性樹脂層３の上部には遮光層７を備えている。この遮光層７は段落００４６に記載されているように高い反射率が要請されている。   An LED device used in this lighting device is shown in FIG. In the light emitting diode 10 (LED device) shown in FIG. 1 of Patent Document 1, an LED chip 2 (LED die) is fixed on an insulating substrate 1 (circuit board), and the LED chip 2 is attached to a translucent resin layer. 3 is sealed. Further, a light shielding layer 7 is provided on the translucent resin layer 3. The light shielding layer 7 is required to have a high reflectance as described in paragraph 0046.

特開２００１−２５７３８１号公報 （図１、段落００４６）Japanese Patent Laid-Open No. 2001-257381 (FIG. 1, paragraph 0046)

特許文献１に示されたＬＥＤ装置（発光ダイオード１０）はＬＥＤダイ（ＬＥＤチップ２）の発光がそのまま側面から出射するので白色光が得られない。白色光を得るためには多くのＬＥＤ装置と同様にＬＥＤダイを青色又は近紫外光で発光させ、蛍光体を含有した被覆部材でＬＥＤダイを被覆すれば良い。特許文献１に示されるＬＥＤ装置（発光ダイオード１０）の場合なら、ＬＥＤダイ（ＬＥＤチップ２）を被覆している被覆部材（透光性樹脂３）に蛍光体を含有させることになる。しかしながら側面から光を放射するＬＥＤ装置は、側面に配置する光学系によって出射面の高さを変更することがある。このときＬＥＤ装置の出射光に対し一定の色度を維持するためには、被覆部材の厚さが変わるたびに蛍光体の含有量を調整し直さなくてはならず、色度管理が煩雑になってしまう。   In the LED device (light emitting diode 10) shown in Patent Document 1, the light emitted from the LED die (LED chip 2) is emitted from the side face as it is, so that white light cannot be obtained. In order to obtain white light, as in many LED devices, the LED die may be made to emit light with blue or near ultraviolet light, and the LED die may be covered with a covering member containing a phosphor. In the case of the LED device (light emitting diode 10) disclosed in Patent Document 1, the phosphor is contained in the covering member (translucent resin 3) covering the LED die (LED chip 2). However, the LED device that emits light from the side surface may change the height of the exit surface by an optical system disposed on the side surface. At this time, in order to maintain a constant chromaticity with respect to the light emitted from the LED device, the phosphor content must be readjusted every time the thickness of the covering member changes, and the chromaticity management is complicated. turn into.

そこで本発明は、この課題を解決するため、上部に反射部材を備え側面から光を放射する半導体発光装置において、色度を容易に管理できる半導体発光装置を提供することを目的とする。   SUMMARY OF THE INVENTION In order to solve this problem, an object of the present invention is to provide a semiconductor light-emitting device that can easily manage chromaticity in a semiconductor light-emitting device that includes a reflection member at the top and emits light from a side surface.

上記課題を解決するため本発明の半導体発光装置は、回路基板上に実装した半導体発素子を透光性部材で被覆し、上部に反射部材を備える半導体発光装置において、
前記半導体発光素子を蛍光体層が覆い、
該蛍光体層を透明層が覆い、
該透明層に前記反射部材が接している
ことを特徴とする。 In order to solve the above problems, a semiconductor light-emitting device of the present invention is a semiconductor light-emitting device in which a semiconductor light-emitting element mounted on a circuit board is covered with a light-transmitting member, and a reflective member is provided on the top.
A phosphor layer covers the semiconductor light emitting device,
A transparent layer covers the phosphor layer,
The reflective member is in contact with the transparent layer.

本発明の半導体発光装置は、回路基板上に実装した半導体発光素子を所定の厚みを持った蛍光体層で被覆している。この半導体発光装置の色度は実用的な精度において半導体発光素子の発光スペクトルと蛍光体層の蛍光物質の濃度及び厚みで決まる。蛍光体層を覆う透明層は、半導体発光装置の厚みを調整しながら光の伝播経路を確保し、側面から出射する光量を所定の水準以上に保っている。   In the semiconductor light emitting device of the present invention, a semiconductor light emitting element mounted on a circuit board is covered with a phosphor layer having a predetermined thickness. The chromaticity of this semiconductor light emitting device is determined by the emission spectrum of the semiconductor light emitting element and the concentration and thickness of the fluorescent substance in the phosphor layer with practical accuracy. The transparent layer covering the phosphor layer ensures a light propagation path while adjusting the thickness of the semiconductor light emitting device, and keeps the amount of light emitted from the side surface at a predetermined level or more.

前記透明層の上部に凹部があっても良い。   A concave portion may be formed on the transparent layer.

前記凹部の上部の輪郭が円又は長円であり、前記凹部が前記半導体発光素子の発する光を四つの側面の方向に反射しても良い。   The outline of the upper part of the concave part may be a circle or an ellipse, and the concave part may reflect light emitted from the semiconductor light emitting element in the directions of four side surfaces.

前記透明層の上部が平坦であっても良い。   The upper part of the transparent layer may be flat.

前記凹部が溝状であり、溝と直交する面が反射面となっていても良い。   The concave portion may have a groove shape, and a surface orthogonal to the groove may be a reflective surface.

以上のように本発明の半導体発光装置は、上部に備えられた反射部材により側面から光を出射する際、半導体発光素子から発した光が半導体発光素子の周囲を覆う蛍光体層で色度を決められ、この色度を保ったまま透明層を伝わって側方に出射する。また出射面の高さを変更しても蛍光体層の厚さが一定であるから色度を一定に保つことができる。これらの結果、色度が容易に管理できる。   As described above, in the semiconductor light emitting device of the present invention, when light is emitted from the side surface by the reflecting member provided at the upper part, the light emitted from the semiconductor light emitting element has chromaticity by the phosphor layer covering the periphery of the semiconductor light emitting element. The chromaticity is maintained and the light is emitted to the side through the transparent layer. Even if the height of the emission surface is changed, the chromaticity can be kept constant because the thickness of the phosphor layer is constant. As a result, the chromaticity can be easily managed.

本発明の第１実施形態におけるＬＥＤ装置の外形図。The external view of the LED device in 1st Embodiment of this invention. 図１に示したＬＥＤ装置の断面図。Sectional drawing of the LED apparatus shown in FIG. 図１に示したＬＥＤ装置の出射光の説明図。Explanatory drawing of the emitted light of the LED apparatus shown in FIG. 本発明の第２実施形態におけるＬＥＤ装置の断面図。Sectional drawing of the LED apparatus in 2nd Embodiment of this invention. 図４に示したＬＥＤ装置において反射部材を除去した状態の平面図。The top view of the state which removed the reflection member in the LED device shown in FIG. 図４に示したＬＥＤ装置の出射光の説明図。Explanatory drawing of the emitted light of the LED apparatus shown in FIG. 本発明の第３実施形態におけるＬＥＤ装置の外形図。The external view of the LED apparatus in 3rd Embodiment of this invention. 図７に示したＬＥＤ装置の断面図。Sectional drawing of the LED apparatus shown in FIG. 図７に示したＬＥＤ装置において反射部材を除去した状態の平面図。The top view of the state which removed the reflection member in the LED apparatus shown in FIG. 図７に示したＬＥＤ装置の出射光の説明図。Explanatory drawing of the emitted light of the LED apparatus shown in FIG.

以下、添付図１〜１０を参照しながら本発明の好適な実施形態について詳細に説明する。なお図面の説明において、同一または相当要素には同一の符号を付し、重複する説明は省略する。また説明のため部材の縮尺は適宜変更している。さらに特許請求の範囲に記載した発明特定事項との関係をカッコ内に記載している。
（第１実施形態） Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.
(First embodiment)

図１により本発明の第１実施形態におけるＬＥＤ装置１０（半導体発光装置）の外形を説明する。図１はＬＥＤ装置１０の外形図であり、（ａ）が平面図、（ｂ）が正面図、（ｃ）が底面図である。ＬＥＤ装置１０を上部から眺めると長方形の反射部材１１のみが見える（ａ）。ＬＥＤ装置１０を正面から眺めると反射部材１１から下に向かって、透明層１２、回路基板１３、及び外部接続電極１４，１５が見える（ｂ）。ＬＥＤ装置１０を底面側から眺めると回路基板１３が占める領域の内側に外部接続電極１４，１５が見える（ｃ）。   The outer shape of the LED device 10 (semiconductor light emitting device) in the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is an outline view of the LED device 10, (a) is a plan view, (b) is a front view, and (c) is a bottom view. When the LED device 10 is viewed from above, only the rectangular reflecting member 11 is visible (a). When the LED device 10 is viewed from the front, the transparent layer 12, the circuit board 13, and the external connection electrodes 14 and 15 can be seen from the reflecting member 11 downward (b). When the LED device 10 is viewed from the bottom side, the external connection electrodes 14 and 15 can be seen inside the area occupied by the circuit board 13 (c).

図２においてＬＥＤ装置１０内部構造を説明する。図２は、図１（ｃ）のＡＡ線に沿って描いたＬＥＤ装置１０の断面図である。ＬＥＤダイ２０は、サファイア基板２１、ｎ型半導体層２２、ｐ型半導体層２３、絶縁膜２４、並びにｐ側電極２５及びｎ側電極２６からなる。サファイア基板２１の下にはｎ型半導体層２２が形成され、さらにｎ型半導体層２２の下にｐ型半導体層２３が形成されている。絶縁膜２４は、二つの開口部を除きｎ型半導体層２２及びｐ型半導体層２３を被覆しており、それぞれの開口部でｐ型半導体層２３とｐ側電極２５並びにｎ型半導体層２２とｎ側電極２６が接続している。   The internal structure of the LED device 10 will be described with reference to FIG. FIG. 2 is a cross-sectional view of the LED device 10 drawn along the line AA in FIG. The LED die 20 includes a sapphire substrate 21, an n-type semiconductor layer 22, a p-type semiconductor layer 23, an insulating film 24, and a p-side electrode 25 and an n-side electrode 26. An n-type semiconductor layer 22 is formed under the sapphire substrate 21, and a p-type semiconductor layer 23 is formed under the n-type semiconductor layer 22. The insulating film 24 covers the n-type semiconductor layer 22 and the p-type semiconductor layer 23 except for two openings, and the p-type semiconductor layer 23, the p-side electrode 25, and the n-type semiconductor layer 22 are formed in each opening. The n-side electrode 26 is connected.

回路基板１３は上面に内部接続電極１４ａ，１５ａが形成されており、内部接続電極１４ａ，１５ａはスルーホール電極１４ｂ，１５ｂを介して外部接続電極１４，１５と接続している。ＬＥＤダイ２０のｐ側及びｎ側の電極２５，２６はそれぞれ内部接続電極１４ａ，１５ａと接続している。ＬＥＤダイ２０は蛍光体層１６で覆われており、蛍光体層１６は透明層１２で覆われている。透明層１２の上部に反射部材１１がある。   The circuit board 13 has internal connection electrodes 14a and 15a formed on the upper surface, and the internal connection electrodes 14a and 15a are connected to the external connection electrodes 14 and 15 through the through-hole electrodes 14b and 15b. The p-side and n-side electrodes 25 and 26 of the LED die 20 are connected to the internal connection electrodes 14a and 15a, respectively. The LED die 20 is covered with a phosphor layer 16, and the phosphor layer 16 is covered with a transparent layer 12. The reflective member 11 is above the transparent layer 12.

サファイア基板２１は透明絶縁基板であり厚さが８０〜１２０μｍである。ｎ型半導体層２２はＧａＮバッファ層とｎ型ＧａＮ層からなり厚さが５μｍ程度である。ｐ型半導体層２３は、反射層や原子拡散防止層などを含む金属多層膜とｐ型ＧａＮ層からなり厚みが１μｍ程度である。図示していないが発光層はｐ型半導体層２３とｎ型半導体層２２の境界部にあり、平面形状はｐ型半導体層２３とほぼ等しい。絶縁膜２４はＳｉＯ２やポリイミドからなり厚さが数１００ｎｍ〜１μｍ程度である。ｐ側電極２５並びにｎ側電極２６はＡｕ又はＣｕをコアとするバンプであり、電解メッキ法で形成し厚さが１０〜３０μｍ程度である。   The sapphire substrate 21 is a transparent insulating substrate and has a thickness of 80 to 120 μm. The n-type semiconductor layer 22 is composed of a GaN buffer layer and an n-type GaN layer and has a thickness of about 5 μm. The p-type semiconductor layer 23 is composed of a metal multilayer film including a reflective layer and an atomic diffusion prevention layer and a p-type GaN layer, and has a thickness of about 1 μm. Although not shown, the light emitting layer is at the boundary between the p-type semiconductor layer 23 and the n-type semiconductor layer 22, and the planar shape is substantially the same as that of the p-type semiconductor layer 23. The insulating film 24 is made of SiO2 or polyimide and has a thickness of about several hundred nm to 1 [mu] m. The p-side electrode 25 and the n-side electrode 26 are bumps having Au or Cu as a core, and are formed by electrolytic plating and have a thickness of about 10 to 30 μm.

回路基板１３は、厚さが数１０μｍから数１００μｍであり、その材料は熱伝導率や反射率等を考慮し、樹脂、セラミック、金属などから選ぶ。外部接続電極１４，１５および内部接続電極１４ａ，１５ａは、厚さが数μｍから数１０μｍであり、Ｎｉ及びＡｕメッキした銅箔である。スルーホール電極１４ｂ、１５ｂは直径が１００〜３００μｍ程度で内部に金属を充填している。ｐ側及びｎ側の電極２５，２６と内部接続電極１４ａ，１５ａは、ＬＥＤ装置１０をマザー基板に実装する際の半田リフローで融解しないようにするためＡｕ−Ｓｎ共晶で接続する。   The circuit board 13 has a thickness of several tens of μm to several hundreds of μm, and its material is selected from resin, ceramic, metal, etc. in consideration of thermal conductivity, reflectance, and the like. The external connection electrodes 14 and 15 and the internal connection electrodes 14a and 15a have a thickness of several μm to several tens of μm, and are Ni and Au plated copper foils. The through-hole electrodes 14b and 15b have a diameter of about 100 to 300 μm and are filled with metal inside. The p-side and n-side electrodes 25 and 26 and the internal connection electrodes 14a and 15a are connected by Au—Sn eutectic so as not to melt by solder reflow when the LED device 10 is mounted on the mother board.

蛍光体層１６はシリコーン樹脂に蛍光粒子を混練した蛍光樹脂を硬化させたものであり、厚さは１００μｍ程度である。蛍光体層１６をＬＥＤダイ２０の周辺部だけに形成する手法として、例えばＬＥＤダイ２０から１００μｍほど離れた位置にダム材を設け、スキージにより硬化前の蛍光樹脂でＬＥＤダイ２０を埋め、蛍光樹脂を硬化させたらダム材を除去するものがある。透明層１２はシリコーン樹脂であり、回路基板１３から透明層１２の上部まで４００μｍから６００μｍ程度にすることが多い。反射部材１１はシリコーン樹脂に酸化チタン等の反射性微粒子を混練し硬化させたもので厚さが５０〜１００μｍ程度である。また反射部材１１は金属膜であっても良い。   The phosphor layer 16 is obtained by curing a phosphor resin obtained by kneading phosphor particles in a silicone resin, and has a thickness of about 100 μm. As a method of forming the phosphor layer 16 only on the periphery of the LED die 20, for example, a dam material is provided at a position about 100 μm away from the LED die 20, and the LED die 20 is filled with a fluorescent resin before curing by a squeegee, Some dam materials are removed after curing. The transparent layer 12 is a silicone resin and is often about 400 μm to 600 μm from the circuit board 13 to the top of the transparent layer 12. The reflective member 11 is obtained by kneading and curing reflective fine particles such as titanium oxide in a silicone resin, and has a thickness of about 50 to 100 μm. The reflecting member 11 may be a metal film.

次に図３によりＬＥＤ装置１０の出射光について説明する。図３はＬＥＤ装置１０の出射光の説明図であり、図２の断面図に光線Ｌ１〜Ｌ４を書き加えたものである。本図では、ＬＥＤダイ２０の発光層からＬＥＤ装置１０の側面を通り外部に出射する光のうち代表
的なものを描いた。例えば光線Ｌ１は、ｎ型半導体層２２とｐ型半導体層２３の境界部にある発光層（図示していない）から発し、サファイア基板２１及び蛍光体層１６を抜け、透明層１２を通り反射部材１１で反射しＬＥＤ装置１０の側面から外部に出射する。このとき界面で起こる反射や屈折、蛍光体層１６で起こる吸収及び蛍光体層１６の発光については無視している。なお蛍光体層１６の発光は等方的であり、その強度は概ね発光層の発光強度に比例する。なお発光層から発しＬＥＤ装置１０の側面から出射する光と、蛍光体層から発しＬＥＤ装置１０の側面から出射する光とを合成したものがＬＥＤ装置の発光となる。 Next, the emitted light of the LED device 10 will be described with reference to FIG. FIG. 3 is an explanatory diagram of the light emitted from the LED device 10 and is obtained by adding light beams L1 to L4 to the cross-sectional view of FIG. In the drawing, representative light out of the light emitted from the light emitting layer of the LED die 20 through the side surface of the LED device 10 is drawn. For example, the light beam L1 is emitted from a light emitting layer (not shown) at the boundary between the n-type semiconductor layer 22 and the p-type semiconductor layer 23, passes through the sapphire substrate 21 and the phosphor layer 16, passes through the transparent layer 12, and reflects. 11 is reflected to the outside from the side surface of the LED device 10. At this time, reflection and refraction occurring at the interface, absorption occurring in the phosphor layer 16 and light emission of the phosphor layer 16 are ignored. The light emission of the phosphor layer 16 is isotropic, and its intensity is approximately proportional to the light emission intensity of the light emitting layer. The light emitted from the LED device is a combination of light emitted from the light emitting layer and emitted from the side surface of the LED device 10 and light emitted from the phosphor layer and emitted from the side surface of the LED device 10.

光線Ｌ２は、発光層から発し、サファイア基板２１、蛍光体層１６及び透明層１２を抜けＬＥＤ装置１０の側面から出射する。光線Ｌ３は発光層から発し、下側に向かった光が内部接続電極１４ａで反射しＬＥＤ装置１０の側面から出射する。光線Ｌ４は発光層から発し、サファイア基板２１、蛍光体層１６及び透明層１２を通り、反射部材１１と回路基板１３で反射し側面から出射する。このようにしてＬＥＤ装置１０は四つの側面から光を出射する。このときＬＥＤ装置１０の四つの側面に導光板若しくは反射部材を隣接配置することにより薄い平面型の照明装置を構成することができる。   The light beam L2 is emitted from the light emitting layer, passes through the sapphire substrate 21, the phosphor layer 16, and the transparent layer 12, and is emitted from the side surface of the LED device 10. The light beam L3 is emitted from the light emitting layer, and the light directed downward is reflected by the internal connection electrode 14a and emitted from the side surface of the LED device 10. The light beam L4 is emitted from the light emitting layer, passes through the sapphire substrate 21, the phosphor layer 16, and the transparent layer 12, is reflected by the reflecting member 11 and the circuit board 13, and is emitted from the side surface. In this way, the LED device 10 emits light from the four side surfaces. At this time, by arranging light guide plates or reflecting members adjacent to the four side surfaces of the LED device 10, a thin planar illumination device can be configured.

以上のように発光層から発しＬＥＤ装置１０の側面から出射する光のうち多くのものは蛍光体層１６を一回だけ通る。蛍光体層１６は蛍光粒子の粒径や濃度から厚さを１００μｍ程度に設定する。また蛍光体層１６はその発光が発光層の発光強度に比例する範囲で使われることから、発光層の発光スペクトルが決まっていれば、所定の厚さに設定した蛍光体層１６によりＬＥＤ装置１０の発光の色度が決まる。透明層１２はＬＥＤ装置１０の高さを調整するとともに、光線Ｌ１〜Ｌ４等の伝播経路となっている。この伝播経路が狭いと出射効率が悪くなる傾向にある。なおＬＥＤダイ２０の直上に向かう光などの影響で、透明層１２の厚みによって多少色度が変化するが、厳密に色度を管理したい場合は蛍光体層１６の上部の厚さを削って調整すると良い。
（第２実施形態） As described above, most of the light emitted from the light emitting layer and emitted from the side surface of the LED device 10 passes through the phosphor layer 16 only once. The thickness of the phosphor layer 16 is set to about 100 μm from the particle size and concentration of the fluorescent particles. Further, since the phosphor layer 16 is used in a range in which the light emission is proportional to the light emission intensity of the light emitting layer, if the emission spectrum of the light emitting layer is determined, the LED layer 10 is set by the phosphor layer 16 set to a predetermined thickness. The light emission chromaticity is determined. The transparent layer 12 adjusts the height of the LED device 10 and serves as a propagation path for the light beams L1 to L4. If this propagation path is narrow, the emission efficiency tends to deteriorate. Note that the chromaticity slightly changes depending on the thickness of the transparent layer 12 due to the effect of light traveling directly above the LED die 20. However, if the chromaticity is to be strictly controlled, the thickness of the upper part of the phosphor layer 16 is trimmed and adjusted. Good.
(Second Embodiment)

図１〜３に示したＬＥＤ装置１０において、ＬＥＤダイ２０の直上方向に出射した光は、たとえ反射部材１１で拡散的に反射されるとしても、多くの成分がＬＥＤ素子２０側に戻ってしまうためＬＥＤ装置１０の側面から効率よく出射できるとはいえない。そこで本発明の第２実施形態として図４〜６によりＬＥＤダイ２０の直上方向に向かう光を有効に側方に出射できるＬＥＤ装置４０を説明する。   In the LED device 10 shown in FIGS. 1 to 3, even if the light emitted directly above the LED die 20 is diffusely reflected by the reflecting member 11, many components return to the LED element 20 side. Therefore, it cannot be said that the light can be efficiently emitted from the side surface of the LED device 10. Therefore, as a second embodiment of the present invention, an LED device 40 capable of effectively emitting light directed in the direction directly above the LED die 20 to the side will be described with reference to FIGS.

図４によりＬＥＤ装置４０内部構造を説明する。図４はＬＥＤ装置４０の断面図である。なおＬＥＤ装置４０の外形は図１で示したＬＥＤ装置１０の外形と同じものとなるので図示を略した。図４はＬＥＤ装置４０において図１（ｃ）のＡＡ線に相当する切断線に沿った断面を示している。図４に示したＬＥＤ装置４０の断面と図２に示したＬＥＤ装置１０の断面との差異は、ＬＥＤ装置４０において透明層４２が窪み４３（凹部）を有し、そこに反射部材４１の一部が入り込んでいることだけである。この窪み４３はＬＥＤダイ２０の上部に存在し、下に凸な曲面になっている。この窪み４３は金型やサンドブラスト法で形成する。   The internal structure of the LED device 40 will be described with reference to FIG. FIG. 4 is a cross-sectional view of the LED device 40. The external shape of the LED device 40 is the same as the external shape of the LED device 10 shown in FIG. FIG. 4 shows a cross section along the cutting line corresponding to the AA line of FIG. The difference between the cross section of the LED device 40 shown in FIG. 4 and the cross section of the LED device 10 shown in FIG. 2 is that the transparent layer 42 has a depression 43 (concave portion) in the LED device 40, and one of the reflecting members 41 exists there. It is only that the part has entered. This depression 43 exists in the upper part of the LED die 20 and has a curved surface protruding downward. The depression 43 is formed by a mold or a sand blast method.

次に図５により窪み４３を上面から眺めた様子を説明する。図５はＬＥＤ装置４０において反射部材４１を除去した状態の平面図である。透明層４２の上面には開口部が長円である窪み４３がある。図中、ＬＥＤダイ２０（図４等参照）の外延を示すためサファイア基板２１の外延を点線で示している。窪み４３の開口部（上部の輪郭）が円若しくは長円であると、マスクを使ったサンドブラスト法により窪み４３を形成する際、その底部を曲面にできる。   Next, a state where the depression 43 is viewed from the upper surface will be described with reference to FIG. FIG. 5 is a plan view of the LED device 40 with the reflecting member 41 removed. On the upper surface of the transparent layer 42, there is a recess 43 having an oval opening. In the figure, the extension of the sapphire substrate 21 is indicated by a dotted line in order to show the extension of the LED die 20 (see FIG. 4 and the like). When the opening (contour of the upper part) of the depression 43 is a circle or an ellipse, the bottom can be curved when the depression 43 is formed by sandblasting using a mask.

次に図６によりＬＥＤ装置４０の出射光について説明する。図６はＬＥＤ装置４０の出射光の説明図であり、図４の断面図に光線Ｌ５，Ｌ６を書き加えたものである。本図は、ＬＥＤダイ２０の発光層からＬＥＤダイ２０の直上方向に向かう光線について図３と同様に描いたものである。光線Ｌ５，Ｌ６は、ｎ型半導体層２２とｐ型半導体層２３の境界部にある発光層（図示していない）から発し、サファイア基板２１及び蛍光体層１６を抜け、透明層４２を通り、窪み４３に入りこんだ反射部材４１で反射しＬＥＤ装置４０の側面から外部に出射する。このとき界面で起こる反射や屈折、蛍光体層１６で起こる吸収及び蛍光体層１６の発光、並びに図３で示した光線Ｌ１〜Ｌ４と同等の光線については図示していない。またＬＥＤ装置１０と同様にＬＥＤ４０は、四つの側面から光を出射する。このときＬＥＤ装置４０の四つの側面に導光板若しくは反射部材を隣接配置することにより薄い平面型の照明装置を構成することができる。
（第３実施形態） Next, light emitted from the LED device 40 will be described with reference to FIG. FIG. 6 is an explanatory diagram of the light emitted from the LED device 40, in which light rays L5 and L6 are added to the cross-sectional view of FIG. This figure is drawn in the same manner as FIG. 3 with respect to the light rays that go from the light emitting layer of the LED die 20 to the direction immediately above the LED die 20. Light rays L5 and L6 are emitted from a light emitting layer (not shown) at the boundary between the n-type semiconductor layer 22 and the p-type semiconductor layer 23, pass through the sapphire substrate 21 and the phosphor layer 16, pass through the transparent layer 42, The light is reflected by the reflection member 41 that has entered the recess 43 and is emitted to the outside from the side surface of the LED device 40. At this time, reflection and refraction occurring at the interface, absorption occurring in the phosphor layer 16 and light emission of the phosphor layer 16, and rays equivalent to the rays L1 to L4 shown in FIG. 3 are not shown. Similarly to the LED device 10, the LED 40 emits light from four side surfaces. At this time, by arranging light guide plates or reflecting members adjacent to the four side surfaces of the LED device 40, a thin flat illumination device can be configured.
(Third embodiment)

第１及び第２実施形態におけるＬＥＤ装置１０，４０は、四つの側面から光を出射していた。このようなＬＥＤ装置１０，４０は四つの側面に導光板若しくは反射部材を隣接させて平面型の照明装置を構成するのに適している。これに対しＬＥＤ装置が一列に配列した線状の照明装置も存在する。この線状の照明装置に適した光源として図７〜１０により本発明の第３実施形態におけるＬＥＤ装置７０を説明する。   The LED devices 10 and 40 in the first and second embodiments emit light from four side surfaces. Such LED devices 10 and 40 are suitable for constructing a flat illumination device with light guide plates or reflecting members adjacent to four side surfaces. On the other hand, there is also a linear illumination device in which LED devices are arranged in a line. As a light source suitable for this linear illumination device, an LED device 70 according to a third embodiment of the present invention will be described with reference to FIGS.

図７によりＬＥＤ装置７０（半導体発光装置）の外形を説明する。図７はＬＥＤ装置７０の外形図であり、（ａ）が正面図、（ｂ）が左側面図である。ＬＥＤ装置７０の上面及び底面は、図１（ａ）及び（ｃ）と同じものになるので図示していない。ＬＥＤ装置７０を正面から眺めると反射部材７１の下に側面反射部材７５があり、さらにその下に回路基板１３と外部接続電極１４，１５が見える。なお反射部材７１と側面反射部材７５（及び（ｂ）で後述する側面反射部材７４）は、ともにシリコーン樹脂に酸化チタン等の反射性微粒子を混練して硬化させたものであり、一体的に形成されるため図にあるような境界線は存在しないが、説明のため反射部材７１と側面反射部材７４，７５を別体としている（以下同様）。なお側面反射部材７４，７５を樹脂、反射部材７１を金属とするような場合は境界線が現れる。ＬＥＤ装置７０を左から眺めると、反射部材７１、側面反射部材７４，７５並びに回路基板１３により囲まれた透明層７２が見える（ｂ）。回路基板１３の下には外部接続電極１４がある。   The outer shape of the LED device 70 (semiconductor light emitting device) will be described with reference to FIG. 7A and 7B are external views of the LED device 70, where FIG. 7A is a front view and FIG. 7B is a left side view. The upper surface and the bottom surface of the LED device 70 are not shown because they are the same as those shown in FIGS. When the LED device 70 is viewed from the front, there is a side reflection member 75 under the reflection member 71, and further, the circuit board 13 and the external connection electrodes 14 and 15 can be seen thereunder. The reflecting member 71 and the side reflecting member 75 (and the side reflecting member 74, which will be described later in (b)) are both formed by kneading and curing reflective fine particles such as titanium oxide in a silicone resin. Therefore, there is no boundary line as shown in the figure, but for the sake of explanation, the reflecting member 71 and the side reflecting members 74 and 75 are separated (the same applies hereinafter). A boundary line appears when the side reflecting members 74 and 75 are made of resin and the reflecting member 71 is made of metal. When the LED device 70 is viewed from the left, a transparent layer 72 surrounded by the reflecting member 71, the side reflecting members 74 and 75 and the circuit board 13 can be seen (b). Below the circuit board 13 is an external connection electrode 14.

図８によりＬＥＤ装置７０の内部構造を説明する。図８はＬＥＤ装置７０の断面図である。なお図８はＬＥＤ装置７０において図１（ｃ）のＡＡ線に相当する切断線に沿った断面を示している。図８に示したＬＥＤ装置７０の断面と図２に示したＬＥＤ装置１０の断面との差異は、ＬＥＤ装置７０において透明層７２が三角形の窪み７３（凹部）を有し、そこに反射部材７１の一部が入り込んでいることだけである。この窪み７３はＬＥＤダイ２０の上部に存在する。この窪み７３は、第２実施形態のＬＥＤ装置４０で示した窪み４３と異なり紙面の表裏方向に延びる溝であり、金型や研削で形成する。以上のようにＬＥＤ装置７０は、窪み７３（凹部）が溝状であり、図７（ｂ）を参照するとこの溝と直交する面が反射面となっている。   The internal structure of the LED device 70 will be described with reference to FIG. FIG. 8 is a cross-sectional view of the LED device 70. FIG. 8 shows a cross section of the LED device 70 along a cutting line corresponding to the line AA in FIG. The difference between the cross section of the LED device 70 shown in FIG. 8 and the cross section of the LED device 10 shown in FIG. 2 is that the transparent layer 72 in the LED device 70 has a triangular depression 73 (concave portion), and the reflecting member 71 is there. It is only that a part of is entering. This depression 73 exists in the upper part of the LED die 20. Unlike the dent 43 shown in the LED device 40 of the second embodiment, the dent 73 is a groove extending in the front and back direction of the paper surface, and is formed by a mold or grinding. As described above, in the LED device 70, the recess 73 (concave portion) has a groove shape, and referring to FIG. 7B, a surface orthogonal to the groove is a reflection surface.

次に図９により窪み７３を上面から眺めた様子を説明する。図９はＬＥＤ装置７０において反射部材７１を除去した状態の平面図である。透明層７２の上面には図の上下に延びる３本の線分により窪み７３が示されている。図中、ＬＥＤダイ２０（図４等参照）の外延を示すためサファイア基板２１の外延を点線で示している。なお窪み７３を示す線とサファイア基板２１の外延を示す点線が重ならないようにサファイア基板２１の左右方向を縮めている。図の上下には透明層７２を挟むようにして側面反射部材７４，７５が存在する。   Next, a state where the depression 73 is viewed from the upper surface will be described with reference to FIG. FIG. 9 is a plan view of the LED device 70 with the reflecting member 71 removed. A recess 73 is shown on the upper surface of the transparent layer 72 by three line segments extending vertically in the figure. In the figure, the extension of the sapphire substrate 21 is indicated by a dotted line in order to show the extension of the LED die 20 (see FIG. 4 and the like). The horizontal direction of the sapphire substrate 21 is shortened so that the line indicating the depression 73 and the dotted line indicating the outer extension of the sapphire substrate 21 do not overlap. Side reflection members 74 and 75 exist on the upper and lower sides of the figure so as to sandwich the transparent layer 72.

次に図１０によりＬＥＤ装置７０の出射光について説明する。図１０はＬＥＤ装置７０の出射光の説明図であり、図８の断面図に光線Ｌ７，Ｌ８を書き加えたものである。本図は、ＬＥＤダイ２０の発光層からＬＥＤダイ２０の直上方向に向かう光線について図３と同様に描いたものである。光線Ｌ７，Ｌ８は、ｎ型半導体層２２とｐ型半導体層２３の境界部にある発光層（図示していない）から発し、サファイア基板２１及び蛍光体層１６を抜け、透明層７２に入射を通り、窪み７３に入りこんだ反射部材７１で反射しＬＥＤ装置７０の側面から外部に出射する。このとき界面で起こる反射や屈折、蛍光体層１６で起こる吸収及び蛍光体層１６の発光、並びに図３で示した光線Ｌ１〜Ｌ４については図示していない。第２実施形態のＬＥＤ装置４０と異なり、ＬＥＤ装置７０は側面反射部材７４，７５（図７，９参照）があるため図の表裏方向への出射光はない。この結果、側面反射部材７４，７５が隣接するように多数のＬＥＤ装置７０を配列し、光が出射する側面と隣接するようにして導光板や反射板を配置することにより、薄型で線状の照明装置が構成できる。   Next, light emitted from the LED device 70 will be described with reference to FIG. FIG. 10 is an explanatory diagram of the light emitted from the LED device 70, in which light rays L7 and L8 are added to the cross-sectional view of FIG. This figure is drawn in the same manner as FIG. 3 with respect to the light rays that go from the light emitting layer of the LED die 20 to the direction immediately above the LED die 20. Light rays L7 and L8 are emitted from the light emitting layer (not shown) at the boundary between the n-type semiconductor layer 22 and the p-type semiconductor layer 23, pass through the sapphire substrate 21 and the phosphor layer 16, and enter the transparent layer 72. As a result, the light is reflected by the reflecting member 71 that has entered the recess 73, and is emitted to the outside from the side surface of the LED device 70. At this time, reflection and refraction occurring at the interface, absorption occurring in the phosphor layer 16 and light emission of the phosphor layer 16, and the light beams L1 to L4 shown in FIG. 3 are not shown. Unlike the LED device 40 of the second embodiment, the LED device 70 has side reflecting members 74 and 75 (see FIGS. 7 and 9), and therefore does not emit light in the front and back directions of the figure. As a result, a large number of LED devices 70 are arranged so that the side reflection members 74 and 75 are adjacent to each other, and the light guide plate and the reflection plate are arranged so as to be adjacent to the side surface from which light is emitted. A lighting device can be configured.

１０，４０，７０…ＬＥＤ装置（半導体発光装置）、
１１，４１，７１…反射部材、
１２，４２，７２…透明層、
１３…回路基板、
１４，１５…外部接続電極、
１４ａ，１５ａ…内部接続電極、
１４ｂ，１５ｂ…スルーホール電極、
１６…蛍光体層、
２０…ＬＥＤダイ（半導体発光素子）、
２１…サファイア基板、
２２…ｎ型半導体層、
２３…ｐ型半導体層、
２４…絶縁膜、
２５…ｐ側電極、
２６…ｎ側電極、
４３，７３…窪み（凹部）、
７４，７５…側面反射部材、
Ｌ１〜Ｌ８…光線。
10, 40, 70 ... LED device (semiconductor light emitting device),
11, 41, 71 ... reflective member,
12, 42, 72 ... transparent layer,
13 ... Circuit board,
14, 15 ... external connection electrodes,
14a, 15a ... internal connection electrodes,
14b, 15b ... through-hole electrodes,
16 ... phosphor layer,
20 ... LED die (semiconductor light emitting element),
21 ... sapphire substrate,
22 ... n-type semiconductor layer,
23 ... p-type semiconductor layer,
24. Insulating film,
25 ... p-side electrode,
26 ... n-side electrode,
43, 73 ... depression (recess),
74, 75 ... side reflecting members,
L1 to L8 ... rays.

Claims (5)

回路基板上に実装した半導体発素子を透光性部材で被覆し、上部に反射部材を備える半導体発光装置において、
前記半導体発光素子を蛍光体層が覆い、
該蛍光体層を透明層が覆い、
該透明層に前記反射部材が接している
ことを特徴とする半導体発光装置。 In a semiconductor light emitting device that covers a semiconductor light emitting element mounted on a circuit board with a translucent member and includes a reflective member on the top,
A phosphor layer covers the semiconductor light emitting device,
A transparent layer covers the phosphor layer,
A semiconductor light-emitting device, wherein the reflective member is in contact with the transparent layer. 前記透明層の上部に凹部があることを特徴とする請求項１に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein a concave portion is provided on the transparent layer. 前記凹部の上部の輪郭が円又は長円であり、前記凹部が前記半導体発光素子の発する光を四つの側面の方向に反射することを特徴とする請求項２に記載の半導体発光装置。   The semiconductor light emitting device according to claim 2, wherein an outline of an upper portion of the concave portion is a circle or an ellipse, and the concave portion reflects light emitted from the semiconductor light emitting element toward four side surfaces. 前記凹部が溝状であり、溝と直交する面が反射面となっていることを特徴とする請求項２に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 2, wherein the concave portion has a groove shape, and a surface orthogonal to the groove is a reflective surface. 前記透明層の上部が平坦であることを特徴とする請求項１に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein an upper portion of the transparent layer is flat.
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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050259A (en) * 2013-08-30 2015-03-16 京セラ株式会社 Semiconductor element mounting substrate and semiconductor device comprising the same
WO2016048971A1 (en) * 2014-09-23 2016-03-31 Koninklijke Philips N.V. Luminance pattern shaping using a back-emitting led and a reflective substrate
WO2016063590A1 (en) * 2014-10-22 2016-04-28 株式会社村田製作所 Mounting board
JP2016119454A (en) * 2014-12-17 2016-06-30 日東電工株式会社 Fluorescent material layer coated optical semiconductor element and manufacturing method of the same
WO2017062119A1 (en) * 2015-10-07 2017-04-13 Koninklijke Philips N.V. FLIP-CHIP SMT LEDs WITH VARIABLE NUMBER OF EMITTING SURFACES
WO2017093248A1 (en) * 2015-12-03 2017-06-08 Osram Opto Semiconductors Gmbh Semiconductor component having light conductor layer
KR20170080531A (en) * 2015-12-31 2017-07-10 에피스타 코포레이션 Light-emitting device
KR101766331B1 (en) * 2015-12-10 2017-08-09 주식회사 세미콘라이트 Semiconductor light emitting device
KR101772550B1 (en) * 2015-12-10 2017-08-31 주식회사 세미콘라이트 Semiconductor light emitting device
JP2017215583A (en) * 2016-05-30 2017-12-07 利▲亜▼▲徳▼光▲電▼股▲フン▼有限公司 Light-emitting assembly and display device
CN110797330A (en) * 2018-08-03 2020-02-14 海迪科（南通）光电科技有限公司 Large-angle light emitting source, surface light source module and preparation method of light emitting source
CN110957408A (en) * 2018-08-17 2020-04-03 新世纪光电股份有限公司 Light emitting device and method for manufacturing the same
JP2020098832A (en) * 2018-12-17 2020-06-25 日亜化学工業株式会社 Light-emitting device and manufacturing method of the light-emitting device
WO2021033775A1 (en) * 2019-08-22 2021-02-25 京セラ株式会社 Double-sided display device
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US11069843B2 (en) 2018-09-28 2021-07-20 Nichia Corporation Light-emitting device
JP2022028040A (en) * 2013-11-14 2022-02-14 晶元光電股▲ふん▼有限公司 Light emitting device
US11329203B2 (en) 2017-06-28 2022-05-10 Nichia Corporation Light emitting device including covering member and optical member
US11489097B2 (en) 2019-11-29 2022-11-01 Nichia Corporation Light emitting device including light transmissive cover member including an annular lens part, and LED package
WO2023274855A1 (en) * 2021-06-28 2023-01-05 Osram Opto Semiconductors Gmbh Light-emitting component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257381A (en) * 2000-03-13 2001-09-21 Sharp Corp Light-emitting diode, manufacturing method therefor and illumination device
JP2004304041A (en) * 2003-03-31 2004-10-28 Citizen Electronics Co Ltd Light emitting diode
JP2005353875A (en) * 2004-06-11 2005-12-22 Citizen Electronics Co Ltd Light emitting diode
JP2006339650A (en) * 2005-06-01 2006-12-14 Samsung Electro-Mechanics Co Ltd Side emission led package and its manufacturing process
JP2011091204A (en) * 2009-10-22 2011-05-06 Citizen Holdings Co Ltd Method for manufacturing led light source device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257381A (en) * 2000-03-13 2001-09-21 Sharp Corp Light-emitting diode, manufacturing method therefor and illumination device
JP2004304041A (en) * 2003-03-31 2004-10-28 Citizen Electronics Co Ltd Light emitting diode
JP2005353875A (en) * 2004-06-11 2005-12-22 Citizen Electronics Co Ltd Light emitting diode
JP2006339650A (en) * 2005-06-01 2006-12-14 Samsung Electro-Mechanics Co Ltd Side emission led package and its manufacturing process
JP2011091204A (en) * 2009-10-22 2011-05-06 Citizen Holdings Co Ltd Method for manufacturing led light source device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US10193035B2 (en) 2014-09-23 2019-01-29 Lumileds Llc Luminance pattern shaping using a back-emitting LED and a reflective substrate
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US10177289B2 (en) 2014-10-22 2019-01-08 Murata Manufacturing Co., Ltd. Mounting substrate
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WO2016063590A1 (en) * 2014-10-22 2016-04-28 株式会社村田製作所 Mounting board
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US11374155B2 (en) 2015-10-07 2022-06-28 Lumileds Llc Flip-chip SMT LEDs with variable number of emitting surfaces
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