JP2013118244A - Semiconductor light-emitting device and lighting apparatus using the same - Google Patents
Semiconductor light-emitting device and lighting apparatus using the same Download PDFInfo
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- JP2013118244A JP2013118244A JP2011264318A JP2011264318A JP2013118244A JP 2013118244 A JP2013118244 A JP 2013118244A JP 2011264318 A JP2011264318 A JP 2011264318A JP 2011264318 A JP2011264318 A JP 2011264318A JP 2013118244 A JP2013118244 A JP 2013118244A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
Description
本発明は、半導体発光素子を透光性部材により被覆し、その上部に反射部材を備えた半導体発光装置及びそれを用いた照明装置に関する。 The present invention relates to a semiconductor light-emitting device in which a semiconductor light-emitting element is covered with a translucent member and a reflective member is provided on the semiconductor light-emitting element, and an illumination device using the semiconductor light-emitting device.
ウェハーから切り出された半導体発光素子（以後とくに断らない限りＬＥＤダイと呼ぶ）を回路基板に実装し、樹脂やガラス等の透光性部材で被覆してパッケージ化した半導体発光装置（以後とくに断らない限りＬＥＤ装置と呼ぶ）が普及している。このＬＥＤ装置をマザー基板に配列し平面型の照明装置を構成する場合、ＬＥＤ装置が照明装置の前方に向かって強い指向性を持つため、レンズを使ってＬＥＤ装置の放射光を広げようとすることがある。しかしながらＬＥＤ装置とレンズを積層すると照明装置が厚くなってしまう。 A semiconductor light emitting device cut from a wafer (hereinafter referred to as an LED die unless otherwise specified) is mounted on a circuit board and covered with a light-transmitting member such as resin or glass and packaged (hereinafter not particularly specified). As long as it is called an LED device). When this LED device is arranged on a mother board to form a flat illumination device, the LED device has a strong directivity toward the front of the illumination device, so it is intended to spread the emitted light of the LED device using a lens. Sometimes. However, when the LED device and the lens are stacked, the lighting device becomes thick.
これに対し照明装置の側方にだけ光を放射するＬＥＤ装置をマザー基板に実装し、このＬＥＤ装置と隣接するように反射板や導光板などの光学部材を配置し照明装置を薄型化することがある。この照明装置は、ＬＥＤ装置内において照明装置の前方に向かおうとする光線をＬＥＤ装置の上部に配置した反射部材により照明装置の側方側に向かわせ、ＬＥＤ装置の側方から出射する光を光学部材により照明装置の前方に向けるものである。このようにすると広い面積で均一な発光面を確保できるとともに、光学部材とＬＥＤ装置とが積層していないため薄型化が達成できる。またレンズを使用しないことにより部材費用を抑えることができる。 On the other hand, an LED device that emits light only to the side of the lighting device is mounted on a mother board, and an optical member such as a reflector or a light guide plate is disposed adjacent to the LED device to make the lighting device thinner. There is. In this lighting device, a light beam directed to the front of the lighting device in the LED device is directed to the side of the lighting device by a reflecting member arranged at the top of the LED device, and light emitted from the side of the LED device is emitted. The optical member is directed to the front of the lighting device. In this way, a uniform light-emitting surface can be secured over a wide area, and a reduction in thickness can be achieved because the optical member and the LED device are not laminated. In addition, the cost of components can be reduced by not using a lens.
この照明装置に使用されるＬＥＤ装置は例えば特許文献１の図１に示されている。特許文献１の図１を図１２に転記する。なお部材を示す番号を一部変えている。図１２は従来例として示した発光ダイオード１０ａ（ＬＥＤ装置）の断面図である。図１２において発光ダイオード１０ａは、絶縁基板１（回路基板）上にＬＥＤチップ２（ＬＥＤダイ）を固定し、そのＬＥＤチップ２を透光性樹脂層３（透光性部材）により封止している。さらに透光性樹脂層３の上部には遮光層７（反射部材）を備えている。この遮光層７は特許文献１の段落００４６に記載されているように高い反射率が要請されている。 An LED device used in this lighting device is shown in FIG. FIG. 1 of Patent Document 1 is transferred to FIG. In addition, the number which shows a member is changed partially. FIG. 12 is a cross-sectional view of a light emitting diode 10a (LED device) shown as a conventional example. In FIG. 12, a light emitting diode 10a has an LED chip 2 (LED die) fixed on an insulating substrate 1 (circuit board), and the LED chip 2 is sealed with a translucent resin layer 3 (translucent member). Yes. Further, a light shielding layer 7 (reflection member) is provided on the upper part of the translucent resin layer 3. The light shielding layer 7 is required to have a high reflectance as described in paragraph 0046 of Patent Document 1.
なお絶縁基板１はリードフレーム４からなる電極パターン４ａ，４ｂを有し、図中、表面１ａ、裏面１ｃ、端部１ｂが示されている。ＬＥＤチップ２は、電極パターン電極４ａにダイボンディングされ、電極部６から延びるワイア５により電極パターン４ｂと接続し、発光面２ａから光を出射している。この光の一部は透光性樹脂層３の上面３ａにおいて遮光層７により反射し発光ダイオード１０ａの側部から外部に出射している。 The insulating substrate 1 has electrode patterns 4a and 4b made of a lead frame 4, and a front surface 1a, a back surface 1c, and an end 1b are shown in the drawing. The LED chip 2 is die-bonded to the electrode pattern electrode 4a, is connected to the electrode pattern 4b by a wire 5 extending from the electrode portion 6, and emits light from the light emitting surface 2a. A part of this light is reflected by the light shielding layer 7 on the upper surface 3a of the translucent resin layer 3, and is emitted from the side of the light emitting diode 10a to the outside.
図１２に示したＬＥＤ装置（発光ダイオード１０ａ）はＬＥＤダイ（ＬＥＤチップ２）の発光がそのまま側面から出射するので白色光が得られない。白色光を得るためには多くのＬＥＤ装置と同様にＬＥＤダイを青色又は近紫外光で発光させ、蛍光体を含有した透光性部材でＬＥＤダイを被覆すれば良い。図１２に示したＬＥＤ装置（発光ダイオード１０ａ）の場合なら、ＬＥＤダイ（ＬＥＤチップ２）を被覆している透光性部材（透光性樹脂３）に蛍光体を含有させることになる。しかしながら、このようにして側面から放射する
光が白色化され通常の光源として適切な形態になったとしても、光源としては単調になり装飾性を重視する用途においては変化に乏しいものとなる。
In the LED device (light emitting diode 10a) shown in FIG. 12, the light emitted from the LED die (LED chip 2) is emitted as it is from the side face, so that no white light can be obtained. In order to obtain white light, the LED die may be made to emit blue or near-ultraviolet light as in many LED devices, and the LED die may be covered with a translucent member containing a phosphor. In the case of the LED device (light emitting diode 10a) shown in FIG. 12, the phosphor is contained in the translucent member (translucent resin 3) covering the LED die (LED chip 2). However, even if the light radiated from the side surface is whitened in this way and is in a suitable form as a normal light source, the light source is monotonous and poor in changes in applications where emphasis is placed on decoration.
そこで本発明は、この課題を解決するため、上部に反射部材を備え側面から光を放射する半導体発光装置において、装飾性を向上できる半導体発光装置及びそれを用いた照明装置を提供することを目的とする。 Therefore, in order to solve this problem, the present invention has an object to provide a semiconductor light emitting device that has a reflective member on the upper portion and emits light from the side surface, and which can improve the decorativeness, and a lighting device using the same. And
上記課題を解決するため本発明の半導体発光装置は、半導体発光素子を被覆する透光性部材の上に反射部材を備える半導体発光装置において、
前記透光性部材に含まれる蛍光体の濃度分布が前記反射部材から下方向に向かって不均一であることを特徴とする。
In order to solve the above problems, a semiconductor light emitting device of the present invention is a semiconductor light emitting device comprising a reflective member on a light transmissive member covering a semiconductor light emitting element.
The concentration distribution of the phosphor contained in the translucent member is non-uniform from the reflecting member in the downward direction.
半導体発光素子から出射する光線は、透光性部材を抜け、一部は反射部材で反射しながら、半導体発光装置の側面から外部に出射する。この光線は透光性部材に含まれる蛍光体により波長変換され強度が弱くなるが、強度減少の度合は光線が通過する経路に依存する。反射部材を上部とした場合、透光性部材に含まれる蛍光体の濃度分布が上下に不均一であるため、半導体発光装置の側面において光線の強度は蛍光体濃度の濃い部位で弱く、薄い部位で強くなる。反対に蛍光体が発する光は、半導体発光装置の側面から出射するとき、蛍光体濃度の濃い部位で強く、薄い部位で弱くなる。以上のようにして半導体発光装置の側面では、上下方向で半導体発光素子の発する光と蛍光体の発する光の強度比が分布し発光色の変化が現れる。この結果、装飾性を向上できる光源が得られる。 A light beam emitted from the semiconductor light emitting element passes through the translucent member, and is partially emitted from the side surface of the semiconductor light emitting device while being reflected by the reflecting member. This light beam is wavelength-converted by the phosphor contained in the translucent member to reduce the intensity, but the degree of intensity reduction depends on the path through which the light beam passes. When the reflecting member is the upper part, the concentration distribution of the phosphor contained in the translucent member is not uniform in the vertical direction. Therefore, the light intensity on the side surface of the semiconductor light emitting device is weak at the portion where the phosphor concentration is high and is thin. Become stronger. On the contrary, when the light emitted from the phosphor is emitted from the side surface of the semiconductor light emitting device, the light is strong at the portion where the phosphor concentration is high and weak at the thin portion. As described above, on the side surface of the semiconductor light emitting device, the intensity ratio between the light emitted from the semiconductor light emitting element and the light emitted from the fluorescent material is distributed in the vertical direction, and the emission color changes. As a result, a light source capable of improving the decorativeness is obtained.
前記透光性部材が蛍光体層と透明層の積層物であっても良い。 The translucent member may be a laminate of a phosphor layer and a transparent layer.
前記透光性部材における蛍光体の濃度分布が連続的に変化しても良い。 The concentration distribution of the phosphor in the translucent member may change continuously.
光を出射させない側面に側部反射部材を備えていても良い。 You may provide the side part reflection member in the side surface which does not radiate | emit light.
底部に底部反射部材を備えていても良い。 A bottom reflecting member may be provided at the bottom.
上記課題を解決するため本発明の半導体発光装置を備えた照明装置は、半導体発光素子を被覆する透光性部材の上に反射部材を備え、前記透光性部材に含まれる蛍光体の濃度分布が前記反射部材から下方向に向かって不均一である半導体発光装置の側面に隣接して、前記側面から出射してくる光を前記半導体発光装置の上方に向ける光学部材を備えていることを特徴とする。 In order to solve the above problems, an illumination device including a semiconductor light emitting device according to the present invention includes a reflective member on a light transmissive member covering the semiconductor light emitting element, and a concentration distribution of a phosphor contained in the light transmissive member. Is provided with an optical member for directing light emitted from the side surface upward of the semiconductor light emitting device, adjacent to the side surface of the semiconductor light emitting device which is non-uniformly downward from the reflecting member. And
前述のように半導体発光素子を被覆する透光性部材の上に反射部材を備え、前記透光性部材に含まれる蛍光体の濃度分布が反射部材から下方向に向かって不均一である半導体発光装置は、側面から光を出射する際、側面の上部から下部に沿って発光色が変化する。本発明の照明装置は、この発光を半導体発光装置の側面に隣接させた光学部材により上方に向けながら平面的に広げている。このようにして平面的に発光色の変化する照明装置が得られ、装飾性が向上する。 As described above, the semiconductor light emitting device includes the reflective member on the translucent member that covers the semiconductor light emitting element, and the concentration distribution of the phosphor contained in the translucent member is not uniform downward from the reflective member. When the device emits light from the side surface, the emission color changes from the upper part to the lower part of the side surface. In the illumination device of the present invention, this light emission is spread in a plane while being directed upward by an optical member adjacent to the side surface of the semiconductor light emitting device. In this way, a lighting device whose emission color changes in a planar manner is obtained, and the decorativeness is improved.
前記光学部材が反射板であっても良い。 The optical member may be a reflector.
前記光学部材が導光板であっても良い。 The optical member may be a light guide plate.
前記半導体発光装置が光を出射する側面と光を出射しない側面を有し、前記光を出射しない側面が隣接するように複数の前記半導体発光素子を配列し、前記光を出射する側面に
前記光学部材を配置しても良い。
The semiconductor light emitting device has a side surface that emits light and a side surface that does not emit light, and a plurality of the semiconductor light emitting elements are arranged so that the side surface that does not emit light is adjacent, and the optical surface is disposed on the side surface that emits the light. A member may be arranged.
以上のように本発明の半導体発光装置は側面から出射する光の色が高さ方向で変化するため装飾性を向上させられる。同様に本発明の半導体発光装置を備えた照明装置は、側面から出射する光の色が高さ方向で変化する半導体発光装置を光源としているので装飾性が向上する。 As described above, the semiconductor light emitting device of the present invention can improve the decoration because the color of the light emitted from the side surface changes in the height direction. Similarly, the lighting device provided with the semiconductor light emitting device of the present invention uses the semiconductor light emitting device in which the color of the light emitted from the side surface changes in the height direction as the light source, so that the decorativeness is improved.
以下、添付図１〜１１を参照しながら本発明の好適な実施形態について詳細に説明する。なお図面の説明において、同一または相当要素には同一の符号を付し、重複する説明は省略する。また説明のため部材の縮尺は適宜変更している。さらに特許請求の範囲に記載した発明特定事項との関係をカッコ内に記載している。
（第１実施形態）
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.
(First embodiment)
図１〜４により本発明の第１実施形態を説明する。図１により本発明の第１実施形態におけるＬＥＤ装置１０（半導体発光装置）の外形を説明する。図１はＬＥＤ装置１０の外形図であり、（ａ）が平面図、（ｂ）が正面図、（ｃ）が底面図である。ＬＥＤ装置１０を上部から眺めると長方形の反射部材１１のみが見える（ａ）。ＬＥＤ装置１０を正面から眺めると、反射部材１１から下に向かって、透明層１２（透光性部材）、蛍光体層１３（透光性部材）、回路基板１４、及び外部接続電極１５，１６が見える（ｂ）。ＬＥＤ装置１０を底面側から眺めると、回路基板１４が占める領域の内側に外部接続電極１５，１６が見える（ｃ）。 A first embodiment of the present invention will be described with reference to FIGS. The outer shape of the LED device 10 (semiconductor light emitting device) in the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is an outline view of the LED device 10, (a) is a plan view, (b) is a front view, and (c) is a bottom view. When the LED device 10 is viewed from above, only the rectangular reflecting member 11 is visible (a). When the LED device 10 is viewed from the front, the transparent layer 12 (translucent member), the phosphor layer 13 (translucent member), the circuit board 14, and the external connection electrodes 15 and 16 are directed downward from the reflecting member 11. Is visible (b). When the LED device 10 is viewed from the bottom side, the external connection electrodes 15 and 16 can be seen inside the area occupied by the circuit board 14 (c).
図２においてＬＥＤ装置１０内部構造を説明する。図２は、図１（ｃ）のＡＡ線に沿って描いたＬＥＤ装置１０の断面図である。回路基板１４上にＬＥＤダイ２０がフリップチップ実装され、ＬＥＤダイ２０を蛍光体層１３が被覆し、蛍光体層１３に透明層１２と反射部材１１が積層している。 The internal structure of the LED device 10 will be described with reference to FIG. FIG. 2 is a cross-sectional view of the LED device 10 drawn along the line AA in FIG. The LED die 20 is flip-chip mounted on the circuit board 14, the LED die 20 is covered with the phosphor layer 13, and the transparent layer 12 and the reflecting member 11 are laminated on the phosphor layer 13.
ＬＥＤダイ２０は、サファイア基板２１、ｎ型半導体層２２、ｐ型半導体層２３、絶縁膜２４、並びにｐ側電極２５及びｎ側電極２６からなる。サファイア基板２１の下にはｎ型半導体層２２が形成され、さらにｎ型半導体層２２の下にｐ型半導体層２３が形成されている。絶縁膜２４は、二つの開口部を除きｎ型半導体層２２及びｐ型半導体層２３を被覆しており、それぞれの開口部でｐ型半導体層２３とｐ側電極２５並びにｎ型半導体層２２とｎ側電極２６が接続している。 The LED die 20 includes a sapphire substrate 21, an n-type semiconductor layer 22, a p-type semiconductor layer 23, an insulating film 24, and a p-side electrode 25 and an n-side electrode 26. An n-type semiconductor layer 22 is formed under the sapphire substrate 21, and a p-type semiconductor layer 23 is formed under the n-type semiconductor layer 22. The insulating film 24 covers the n-type semiconductor layer 22 and the p-type semiconductor layer 23 except for two openings, and the p-type semiconductor layer 23, the p-side electrode 25, and the n-type semiconductor layer 22 are formed in each opening. The n-side electrode 26 is connected.
回路基板１４は上面に内部接続電極１５ａ，１６ａが形成されており、内部接続電極１５ａ，１６ａはスルーホール電極１５ｂ，１６ｂを介して外部接続電極１５，１６と接続している。ＬＥＤダイ２０のｐ側及びｎ側の電極２５，２６はそれぞれ内部接続電極１５ａ，１６ａと接続している。 The circuit board 14 has internal connection electrodes 15a and 16a formed on the upper surface, and the internal connection electrodes 15a and 16a are connected to the external connection electrodes 15 and 16 through the through-hole electrodes 15b and 16b. The p-side and n-side electrodes 25 and 26 of the LED die 20 are connected to the internal connection electrodes 15a and 16a, respectively.
サファイア基板２１は透明絶縁基板であり厚さが８０〜１２０μｍである。ｎ型半導体層２２はＧａＮバッファ層とｎ型ＧａＮ層からなり厚さが５μｍ程度である。ｐ型半導体層２３は、反射層や原子拡散防止層などを含む金属多層膜とｐ型ＧａＮ層からなり厚みが１μｍ程度である。図示していないが発光層はｐ型半導体層２３とｎ型半導体層２２の境界部にあり、平面形状はｐ型半導体層２３とほぼ等しい。絶縁膜２４はＳｉＯ２やポリイミドからなり厚さが数１００ｎｍ〜１μｍ程度である。ｐ側電極２５並びにｎ側電極２６はＡｕ又はＣｕをコアとするバンプであり、電解メッキ法で形成し厚さが１０〜３０μｍ程度である。 The sapphire substrate 21 is a transparent insulating substrate and has a thickness of 80 to 120 μm. The n-type semiconductor layer 22 is composed of a GaN buffer layer and an n-type GaN layer and has a thickness of about 5 μm. The p-type semiconductor layer 23 is composed of a metal multilayer film including a reflective layer and an atomic diffusion prevention layer and a p-type GaN layer, and has a thickness of about 1 μm. Although not shown, the light emitting layer is at the boundary between the p-type semiconductor layer 23 and the n-type semiconductor layer 22, and the planar shape is substantially the same as that of the p-type semiconductor layer 23. The insulating film 24 is made of SiO2 or polyimide and has a thickness of about several hundred nm to 1 [mu] m. The p-side electrode 25 and the n-side electrode 26 are bumps having Au or Cu as a core, and are formed by electrolytic plating and have a thickness of about 10 to 30 μm.
回路基板１４は、厚さが数１０μｍから数１００μｍであり、その材料は熱伝導率や反射率等を考慮し、樹脂、セラミック、金属などから選ぶ。外部接続電極１５，１６および内部接続電極１５ａ，１６ａは、厚さが数μｍから数１０μｍであり、Ｎｉ及びＡｕメッキした銅箔である。スルーホール電極１５ｂ，１６ｂは直径が１００〜３００μｍ程度で内部に金属を充填している。ｐ側及びｎ側の電極２５，２６と内部接続電極１５ａ，１６ａは、ＬＥＤ装置１０をマザー基板に実装する際の半田リフローで融解しないようにするためＡｕ−Ｓｎ共晶で接続する。 The circuit board 14 has a thickness of several tens of μm to several hundreds of μm, and its material is selected from resin, ceramic, metal, and the like in consideration of thermal conductivity, reflectance, and the like. The external connection electrodes 15 and 16 and the internal connection electrodes 15a and 16a have a thickness of several μm to several tens of μm, and are Ni and Au plated copper foils. The through-hole electrodes 15b and 16b have a diameter of about 100 to 300 μm and are filled with metal inside. The p-side and n-side electrodes 25, 26 and the internal connection electrodes 15 a, 16 a are connected by Au—Sn eutectic so as not to melt by solder reflow when the LED device 10 is mounted on the mother board.
蛍光体層１３はシリコーン樹脂に蛍光粒子を混練した蛍光樹脂を硬化させたものである。透明層１２はシリコーン樹脂であり、回路基板１４から透明層１２の上部まで４００μｍから６００μｍ程度にすることが多い。反射部材１１はシリコーン樹脂に酸化チタン等の反射性微粒子を混練し硬化させたもので厚さが５０〜１００μｍ程度である。また反射部材１１は金属膜であっても良い。 The phosphor layer 13 is obtained by curing a phosphor resin obtained by kneading phosphor particles in a silicone resin. The transparent layer 12 is a silicone resin, and is often about 400 μm to 600 μm from the circuit board 14 to the top of the transparent layer 12. The reflective member 11 is obtained by kneading and curing reflective fine particles such as titanium oxide in a silicone resin, and has a thickness of about 50 to 100 μm. The reflecting member 11 may be a metal film.
次に図３によりＬＥＤ装置１０の出射光について説明する。図３はＬＥＤ装置１０の出射光の説明図であり、図２の断面図に光線Ｌ１〜Ｌ４を書き加えたものである。まずＬ１及びＬ２により側面から出射する光の色を定性的に説明する。なおｎ型半導体層２２とｐ型半導体層２３の境界部にある発光層（図示していない）では青色発光し、蛍光体層１３はこの青色光の一部を黄色に波長変換する蛍光体を含有しているものとする。光線Ｌ１は、発光層から発し、サファイア基板２１及び蛍光体層１３を抜け、透明層１２を通り反射部材１１で反射しＬＥＤ装置１０の側面から外部に出射する。光線Ｌ２は、発光層から発し、サファイア基板２１及び蛍光体層１３を抜けＬＥＤ装置１０の側面から外部に出射する。光線Ｌ２は、光線Ｌ１に比べ蛍光体層１３を抜けるのに長い距離を進んでいため、光線Ｌ１に比べ光線Ｌ２は波長変換を多く受け、黄色の成分が多くなる。 Next, the emitted light of the LED device 10 will be described with reference to FIG. FIG. 3 is an explanatory diagram of the light emitted from the LED device 10 and is obtained by adding light beams L1 to L4 to the cross-sectional view of FIG. First, the color of light emitted from the side surface by L1 and L2 will be qualitatively described. Note that a light emitting layer (not shown) at the boundary between the n-type semiconductor layer 22 and the p-type semiconductor layer 23 emits blue light, and the phosphor layer 13 is a phosphor that converts part of the blue light into yellow. It shall contain. The light beam L <b> 1 is emitted from the light emitting layer, passes through the sapphire substrate 21 and the phosphor layer 13, passes through the transparent layer 12, is reflected by the reflecting member 11, and is emitted to the outside from the side surface of the LED device 10. The light beam L2 is emitted from the light emitting layer, passes through the sapphire substrate 21 and the phosphor layer 13, and is emitted to the outside from the side surface of the LED device 10. Since the light ray L2 travels a long distance to pass through the phosphor layer 13 as compared with the light ray L1, the light ray L2 undergoes more wavelength conversion than the light ray L1, and the yellow component increases.
光線Ｌ１，Ｌ２による説明では光線Ｌ１，Ｌ２が変色するものとしていたが、実際は光線Ｌ１，Ｌ２の強度が低下し、蛍光体による発光との強度バランスがＬＥＤ装置１０の側面において図の上下方向で異なるようになる。そこで光線Ｌ３，Ｌ４により拡散的な反射及び等方的な蛍光体の発光を含む過程について説明する。光線Ｌ３は発光層から発し、サファイア基板２１と抜け、蛍光体層１３で波長変換されなかった青色光である。光線Ｌ３は反射部材１１の下面で拡散的に反射し、ＬＥＤ装置１０の右側面から出射する。光線Ｌ４は発光層から発し、サファイア基板２１と抜け、蛍光体層１３で波長変換され黄色光となる。蛍光体層１３に含有される蛍光体は等方的に発光するが、図ではこれらの光のうちＬＥＤ装置１０の右側面から出射する成分を描いている。波長変換を受けなかった光線Ｌ３の影響で図の右側面の上部は青成分が多くなる。いっぽう波長変換された発光である光線Ｌ４の影響で右側面の下部は黄色の成分が強くなる。 In the description of the light beams L1 and L2, the light beams L1 and L2 are assumed to change color. However, the intensity of the light beams L1 and L2 is actually lowered, and the intensity balance with the light emission by the phosphor is in the vertical direction of the figure on the side of the LED device 10 To be different. Therefore, a process including diffuse reflection by the light beams L3 and L4 and light emission of an isotropic phosphor will be described. The light beam L3 is blue light that is emitted from the light emitting layer, passes through the sapphire substrate 21, and is not wavelength-converted by the phosphor layer 13. The light beam L <b> 3 is diffusely reflected on the lower surface of the reflecting member 11 and is emitted from the right side surface of the LED device 10. The light beam L4 is emitted from the light emitting layer, passes through the sapphire substrate 21, and is converted in wavelength by the phosphor layer 13 to become yellow light. The phosphor contained in the phosphor layer 13 emits isotropically, but in the figure, the components that are emitted from the right side surface of the LED device 10 are drawn. Due to the influence of the light beam L3 that has not undergone wavelength conversion, the upper part of the right side of the figure has a greater blue component. On the other hand, the yellow component is strengthened at the lower part of the right side surface due to the influence of the light beam L4 which is the wavelength-converted light emission.
以上のようにＬＥＤダイ２０を被覆する透光性部材として蛍光体層１３と透明層１２の積層物を採用し、上下方向に蛍光体濃度の不均一な状態を形成することにより、上部側である反射部材１１寄りの側面の発光は青が強く、下部側である回路基板１４寄りの側面の発光色は黄色が強くなり、中間部は中間色が現れる。また、透明層１２と蛍光体層１３の厚さの比を変えることで色合い及びその分布を調整できる。 As described above, by adopting a laminate of the phosphor layer 13 and the transparent layer 12 as the translucent member covering the LED die 20, and forming a non-uniform state of the phosphor concentration in the vertical direction, The light emitted from the side near the reflecting member 11 is strong in blue, the light emitted from the side near the circuit board 14 on the lower side is intense in yellow, and an intermediate color appears in the middle. Further, the hue and its distribution can be adjusted by changing the thickness ratio of the transparent layer 12 and the phosphor layer 13.
図４によりＬＥＤ装置１０を備えた本発明の第１実施形態における照明装置４０を説明する。図４は照明装置４０の説明図であり、（ａ）が断面図、（ｂ）が平面図である。（ａ）の断面図は（ｂ）のＢＢ線に沿って描いたものである。照明装置４０はマザー基板４２を備え、マザー基板４２上に反射板４１を配置している。反射板４１は、マザー基板４２に実装されたＬＥＤ装置１０の側部に配置され、ＬＥＤ装置１０に近い側が低くなっている。ＬＥＤ装置１０の側面から出射した光線Ｌ５，Ｌ６は反射板４１の斜面で拡散反射する。（ｂ）に示すように照明装置４０を上方から眺めるとＬＥＤ装置１０の四方を反射板４１がとり囲んでいる。中央に配置されたＬＥＤ装置１０は上部の反射部材１１が見え、ＬＥＤ装置１０と反射板４１の間にはマザー基板４２の表面が見える。この照明装置４０を多数準備し、これらを平面的に配列させればさらに大型の照明装置を構成できる。
（第２実施形態）
The illumination device 40 according to the first embodiment of the present invention including the LED device 10 will be described with reference to FIG. 4A and 4B are explanatory views of the lighting device 40, where FIG. 4A is a cross-sectional view and FIG. 4B is a plan view. The cross-sectional view of (a) is drawn along the line BB of (b). The lighting device 40 includes a mother substrate 42, and a reflecting plate 41 is disposed on the mother substrate 42. The reflection plate 41 is disposed on the side portion of the LED device 10 mounted on the mother board 42, and the side close to the LED device 10 is low. Light rays L5 and L6 emitted from the side surface of the LED device 10 are diffusely reflected on the inclined surface of the reflector 41. As shown in (b), when the illumination device 40 is viewed from above, the reflector 41 surrounds the four sides of the LED device 10. The LED device 10 arranged at the center shows the upper reflecting member 11, and the surface of the mother substrate 42 is seen between the LED device 10 and the reflecting plate 41. If a large number of lighting devices 40 are prepared and arranged in a plane, a larger lighting device can be configured.
(Second Embodiment)
図１〜３で示した第１実施形態のＬＥＤ装置１０は、透光部材が上下方向に２層に分離していた。このようにすると側面の上側と下側ではっきりとした色の差を出しやすいが、透明層１２と蛍光体層１３の境界付近で色度の変化量が大きくなる。また第１実施形態の照明装置４０ではＬＥＤ装置１０の側部に隣接させた光学部材が反射板であったが、横方向に広がる光の方向を変える光学部材としては反射板に限られない。そこで図５〜７により本発明の第２実施形態として透光性部材中の蛍光体濃度分布が徐々に変化するＬＥＤ装置５０並びにこのＬＥＤ装置５０の側部に導光板を備えた照明装置７０を説明する。 In the LED device 10 of the first embodiment shown in FIGS. 1 to 3, the translucent member is separated into two layers in the vertical direction. In this way, it is easy to produce a clear color difference between the upper side and the lower side of the side surface, but the amount of change in chromaticity increases near the boundary between the transparent layer 12 and the phosphor layer 13. Moreover, in the illuminating device 40 of 1st Embodiment, although the optical member adjacent to the side part of the LED apparatus 10 was a reflecting plate, it is not restricted to a reflecting plate as an optical member which changes the direction of the light spread to a horizontal direction. Accordingly, as shown in FIGS. 5 to 7, as a second embodiment of the present invention, an LED device 50 in which the phosphor concentration distribution in the translucent member gradually changes and an illuminating device 70 provided with a light guide plate on the side of the LED device 50 are provided. explain.
図５により本発明の第２実施形態におけるＬＥＤ装置５０（半導体発光装置）の外形を説明する。図５はＬＥＤ装置５０の正面図である。なおＬＥＤ装置５０の平面図及び底面図は、図１（ａ）及び（ｃ）で示したＬＥＤ装置１０の平面図及び底面図と等しいので図示していない。図５においてＬＥＤ装置５０を正面から眺めると反射部材５１の下に蛍光体層５２（透光性部材）、回路基板１４、及び外部接続電極１５，１６が見える。蛍光体層５２は、蛍光体を含有する透光性部材であり、蛍光体の濃度が図の上から下に向かって徐々（連続的）に濃くなっている。ＬＥＤ装置５０に含まれる回路基板１４及び外部接続電極１５，１６は第１実施形態におけるＬＥＤ装置１０の回路基板１４及び外部接続電極１５，１６と同じものである。 The outer shape of the LED device 50 (semiconductor light emitting device) in the second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a front view of the LED device 50. The plan view and the bottom view of the LED device 50 are not shown because they are the same as the plan view and the bottom view of the LED device 10 shown in FIGS. In FIG. 5, when the LED device 50 is viewed from the front, the phosphor layer 52 (translucent member), the circuit board 14, and the external connection electrodes 15 and 16 can be seen under the reflecting member 51. The phosphor layer 52 is a translucent member containing a phosphor, and the concentration of the phosphor gradually increases (continuously) from the top to the bottom of the figure. The circuit board 14 and the external connection electrodes 15 and 16 included in the LED device 50 are the same as the circuit board 14 and the external connection electrodes 15 and 16 of the LED device 10 in the first embodiment.
図６によりＬＥＤ装置５０内部構造を説明する。図６は、図１（ｃ）のＡＡ線に相当する切断線に沿って描いたＬＥＤ装置５０の断面図である。ＬＥＤダイ２０及び回路基板１４の内部接続電極１５ａ，１６ａ、スルーホール電極１５ｂ，１６ｂも、図２に示したＬＥＤ装置１０のＬＥＤダイ２０及び回路基板１４の内部接続電極１５ａ，１６ａ、スルーホール電極１５ｂ，１６ｂと同じものである。図６においてＬＥＤ装置５０の内部でも反射部材５１の下に配置した蛍光体層５２は蛍光体の濃度が図の上から下に向かって徐々に濃くなっている。なおこの濃度分布は、硬化前のシリコーン樹脂に蛍光体を均一分散させ、このシリコーン樹脂でＬＥＤダイ２０を被覆してから蛍光体を沈降させ、その途中でシリコーン樹脂を硬化させることにより得られる。 The internal structure of the LED device 50 will be described with reference to FIG. FIG. 6 is a cross-sectional view of the LED device 50 drawn along a cutting line corresponding to the line AA in FIG. The LED die 20 and the internal connection electrodes 15a and 16a and the through-hole electrodes 15b and 16b of the circuit board 14 are also the LED die 20 and the internal connection electrodes 15a and 16a of the circuit board 14 and the through-hole electrodes of the LED device 10 shown in FIG. It is the same as 15b and 16b. In FIG. 6, the phosphor layer 52 disposed below the reflecting member 51 also in the LED device 50 has a gradually increasing phosphor concentration from the top to the bottom of the figure. This concentration distribution is obtained by uniformly dispersing the phosphor in the uncured silicone resin, coating the LED die 20 with the silicone resin, precipitating the phosphor, and curing the silicone resin in the middle.
図６によりＬＥＤ装置５０の発光状況を説明する。発光層から図の上部に向かう光は蛍光体の濃度が薄いため波長変換を受ける確率が低くなるため、側面の上部から出射する光は青みがかっている。これに対し発光層から図の下部に向かう光は蛍光体の濃度が濃いた
め波長変換される確率が高くなり、側面の下部から出射する光は黄色みがかっている。側面の中間部から出射する光は上部と下部の中間の色合いになる。
The light emission state of the LED device 50 will be described with reference to FIG. The light emitted from the light emitting layer to the upper part of the figure has a low phosphor concentration and thus has a low probability of undergoing wavelength conversion. Therefore, the light emitted from the upper part of the side surface is bluish. On the other hand, the light from the light emitting layer toward the lower part of the figure has a high probability of being wavelength-converted because the phosphor concentration is high, and the light emitted from the lower part of the side surface is yellowish. The light emitted from the middle part of the side surface has an intermediate color between the upper part and the lower part.
図７によりＬＥＤ装置５０を備えた本発明の第２実施形態における照明装置７０を説明する。図７は照明装置７０の断面図であり、図４（ｂ）のＢＢ線に相当する切断線に沿って描いたものである。照明装置７０はマザー基板７２を備え、マザー基板７２上に導光板７１を配置している。導光板７１は、透明樹脂からなり下部にプリズム７１ａを備え、ＬＥＤ装置５０の側部に配置されている。ＬＥＤ装置５０の側面から出射した光線Ｌ７はプリズム７１ａの斜面で反射し図の上方に向かい、光線Ｌ８はいったん導光板７１の上面で反射し、その後プリズム７１ａの斜面で反射し上方に向かう。 The illumination device 70 according to the second embodiment of the present invention including the LED device 50 will be described with reference to FIG. FIG. 7 is a cross-sectional view of the illumination device 70, which is drawn along a cutting line corresponding to the BB line in FIG. 4B. The illumination device 70 includes a mother substrate 72, and a light guide plate 71 is disposed on the mother substrate 72. The light guide plate 71 is made of a transparent resin and includes a prism 71 a at the lower portion, and is disposed on the side of the LED device 50. The light beam L7 emitted from the side surface of the LED device 50 is reflected by the slope of the prism 71a and travels upward in the figure, and the light beam L8 is once reflected by the upper surface of the light guide plate 71 and then reflected by the slope of the prism 71a and travels upward.
本実施形態では導光板７１中を伝播する光を曲げ出射させる手段としてプリズム７１ａを使ったが、プリズム７１ａの代わりに拡散面と反射層を使うこともある。プリズム７１ａはＬＥＤ装置５０から離れる方向に対し規則的な溝を形成していた。すなわち図７において紙面の表裏方向と左右方向に異方性があった。これに対しプリズム７１ａの代わりに拡散面を使用することがある。拡散面は、例えば半球状の微小な凹凸を形成し、この凹凸により反射させるものである。導光板の底面を拡散面とした場合、微小な凹凸は拡散面上で等方的に分布する。そこでこの導光板に穴を開け、そこにＬＥＤ装置５０を配置すれば照明装置７０と類似した照明装置が得られる。このとき一枚の導光板に複数の穴を開け、各穴にＬＥＤ装置５０を配置すれば、簡単に大型の照明装置を得ることができる。
（第３実施形態）
In the present embodiment, the prism 71a is used as means for bending and emitting light propagating through the light guide plate 71. However, a diffusion surface and a reflective layer may be used instead of the prism 71a. The prism 71 a formed a regular groove in the direction away from the LED device 50. That is, in FIG. 7, there was anisotropy in the front / back direction and the left / right direction of the page. On the other hand, a diffusing surface may be used instead of the prism 71a. The diffusing surface is formed, for example, by forming hemispherical minute irregularities and reflecting the irregularities. When the bottom surface of the light guide plate is a diffusion surface, minute irregularities are isotropically distributed on the diffusion surface. Therefore, if a hole is made in the light guide plate and the LED device 50 is arranged there, an illumination device similar to the illumination device 70 can be obtained. At this time, if a plurality of holes are formed in one light guide plate and the LED device 50 is disposed in each hole, a large illuminating device can be easily obtained.
(Third embodiment)
第１及び第２実施形態におけるＬＥＤ装置１０，５０は４つの側面から光を出射させていたが、一部の側面からだけ光を出射させても良い。またこのＬＥＤ装置を光源として照明装置を構成する場合、光を出射させる側面にだけ光学部材を配置すれば良い。さらに第１及び第２実施形態におけるＬＥＤ装置１０，５０は回路基板１４を備えていたが、回路基板１４の代わりに樹脂層とすることもできる。そこで図８〜１１により本発明の第３実施形態として一部の側部からだけ光が出射し、回路基板の代わりに樹脂層を備えるＬＥＤ装置８０並びにこのＬＥＤ装置８０の側部に反射板を備えた照明装置９０を説明する。 The LED devices 10 and 50 in the first and second embodiments emit light from four side surfaces, but may emit light only from some side surfaces. Further, when the lighting device is configured using this LED device as a light source, the optical member may be disposed only on the side surface from which light is emitted. Furthermore, although the LED devices 10 and 50 in the first and second embodiments include the circuit board 14, a resin layer may be used instead of the circuit board 14. Accordingly, as shown in FIGS. 8 to 11, as a third embodiment of the present invention, light is emitted only from a part of the side, and the LED device 80 including a resin layer instead of the circuit board and a reflector on the side of the LED device 80 are provided. The provided illumination device 90 will be described.
図８は本発明の第３実施形態におけるＬＥＤ装置８０（半導体発光装置）の外形を説明するための外形図であり、（ａ）が平面図、（ｂ）が正面図、（ｃ）が底面図である。ＬＥＤ装置８０を上部から眺めると長方形の反射部材８１のみが見える（ａ）。ＬＥＤ装置８０を正面から眺めると反射部材８１の下部（底部）に底部反射部材８４（樹脂層）及び外部接続電極８５，８６が見える（ｂ）。ＬＥＤ装置８０を底面側から眺めると底部反射部材８４が占める領域の内側に外部接続電極８５，８６が見える（ｃ）。 8A and 8B are external views for explaining the external shape of the LED device 80 (semiconductor light emitting device) according to the third embodiment of the present invention. FIG. 8A is a plan view, FIG. 8B is a front view, and FIG. FIG. When the LED device 80 is viewed from above, only the rectangular reflecting member 81 is visible (a). When the LED device 80 is viewed from the front, the bottom reflection member 84 (resin layer) and the external connection electrodes 85 and 86 can be seen at the bottom (bottom) of the reflection member 81 (b). When the LED device 80 is viewed from the bottom side, the external connection electrodes 85 and 86 can be seen inside the region occupied by the bottom reflecting member 84 (c).
図９においてＬＥＤ装置８０の光出射面を説明する。図９はＬＥＤ装置８０の左側面図である。反射部材８１は、上部反射部材８１ａと側部反射部材８１ｂからなる。反射部材８１と底部反射部材８４で囲まれる領域に蛍光体層８３（透光性部材）と透明層８２（透光性部材）が積層している。底部反射部材８４の下には外部接続電極８５が見える。 The light emission surface of the LED device 80 will be described with reference to FIG. FIG. 9 is a left side view of the LED device 80. The reflection member 81 includes an upper reflection member 81a and a side reflection member 81b. A phosphor layer 83 (translucent member) and a transparent layer 82 (translucent member) are stacked in a region surrounded by the reflecting member 81 and the bottom reflecting member 84. The external connection electrode 85 is visible under the bottom reflecting member 84.
次に図１０によりＬＥＤ装置８０内部構造を説明する。図１０は、図８（ｃ）のＣＣ線に沿って描いたＬＥＤ装置８０の断面図である。底部反射部材８４には貫通孔があり、この貫通孔にＬＥＤダイ２０ａのｐ側電極２５ａとｎ側電極２６ａがはまり込んでいる。ｐ側電極２５ａとｎ側電極２６ａと接続する外部電極８５，８６が底部反射部材８４の下面に形成されている。蛍光体層８３（透光性部材）がＬＥＤダイ２０ａを被覆し、蛍光体層８３上に透明層８２（透光性部材）と上部反射部材８１ａが積層している。 Next, the internal structure of the LED device 80 will be described with reference to FIG. FIG. 10 is a cross-sectional view of the LED device 80 drawn along the CC line in FIG. The bottom reflecting member 84 has a through hole, and the p-side electrode 25a and the n-side electrode 26a of the LED die 20a are fitted in the through hole. External electrodes 85 and 86 connected to the p-side electrode 25 a and the n-side electrode 26 a are formed on the lower surface of the bottom reflecting member 84. The phosphor layer 83 (translucent member) covers the LED die 20a, and the transparent layer 82 (translucent member) and the upper reflecting member 81a are laminated on the phosphor layer 83.
ＬＥＤダイ２０ａはサファイア基板２１ａ、ｎ型半導体層２２ａ、ｐ型半導体層２３ａ
、絶縁膜２４ａ、並びにｐ側及びｎ側の電極２５ａ，２６ａを備えている。ＬＥＤダイ２０ａと図２で示したＬＥＤダイ２０の主な違いは、ＬＥＤダイ２０ａにおけるｐ側及びｎ側の電極２５ａ，２６ａである。ＬＥＤ装置８０は、インターポーザとして機能する回路基板がなく、ｐ側及びｎ側の電極２５ａ，２６ａが直接的に外部電極８５，８６と接続しているため、予めｐ側及びｎ側の電極２５ａ，２６ａの位置を調整しておく必要がある。そのためＬＥＤダイ２０に比べＬＥＤダイ２０ａではｐ側電極２５ａを小型化し、ｎ側電極２６ａをｐ型半導体層２３ａに乗り上げるようにして大型化している。なおｐ側及びｎ側の電極２５ａ，２６ａの厚さを除いてＬＥＤダイ２０ａの各部材の材料及び厚さはＬＥＤダイ２０と等しい。ｐ側及びｎ側の電極２５ａ，２６ａの厚さは、底部反射部材８４の反射率を高くするため５０μｍ程度にする。
The LED die 20a includes a sapphire substrate 21a, an n-type semiconductor layer 22a, and a p-type semiconductor layer 23a.
, An insulating film 24a, and p-side and n-side electrodes 25a and 26a. The main difference between the LED die 20a and the LED die 20 shown in FIG. 2 is the p-side and n-side electrodes 25a and 26a in the LED die 20a. Since the LED device 80 does not have a circuit board that functions as an interposer, and the p-side and n-side electrodes 25a and 26a are directly connected to the external electrodes 85 and 86, the p-side and n-side electrodes 25a and 25a, It is necessary to adjust the position of 26a. Therefore, compared with the LED die 20, the LED die 20a is made larger by reducing the size of the p-side electrode 25a and riding the n-side electrode 26a on the p-type semiconductor layer 23a. The material and thickness of each member of the LED die 20a are equal to those of the LED die 20 except for the thicknesses of the p-side and n-side electrodes 25a and 26a. The thicknesses of the p-side and n-side electrodes 25 a and 26 a are set to about 50 μm in order to increase the reflectance of the bottom reflecting member 84.
反射部材８１及び底部反射部材８４は酸化チタン等の反射性微粒子を混練して硬化させたシリコーン樹脂であり、透明層８２及び蛍光体層８３は図２で示した透明層１２及び蛍光体層１３と等しい。このＬＥＤ装置８０は側部反射部材８１ｂがあるので、図１０の左右方向にしか光を出射しない。このとき第１実施形態のＬＥＤ装置１０と同様にＬＥＤ装置８０は、光を出射する側面において上部から下部にかけて発光色が変化する。 The reflecting member 81 and the bottom reflecting member 84 are a silicone resin obtained by kneading and curing reflecting fine particles such as titanium oxide, and the transparent layer 82 and the phosphor layer 83 are the transparent layer 12 and the phosphor layer 13 shown in FIG. Is equal to Since the LED device 80 includes the side reflection member 81b, the LED device 80 emits light only in the left-right direction in FIG. At this time, like the LED device 10 of the first embodiment, the LED device 80 changes its emission color from the upper side to the lower side on the side surface from which light is emitted.
ＬＥＤ装置８０の作り方を説明する。まず複数のＬＥＤダイ２０ａを準備し、ｐ側及びｎ側の電極２５ａ，２６ａを粘着層に沈み込ませるようにしてＬＥＤダイ２０ａを粘着シート上に配列する。次に蛍光体層８３と透明層８２を粘着シート全体に亘って形成したら、側部反射部材８１ｂを形成する部分をハーフダイシングし、このハーフダイシングで形成した溝及び透明層８２を覆うように反射部材８１を塗布し硬化させる。続いて粘着シートを剥がす。このときＬＥＤダイ２０ａの底面は露出している。続いてＬＥＤダイ２０ａの電極面側に底部反射部材８４を塗布し硬化させ、研磨等でｐ側及びｎ側の電極２５ａ，２６ａの表面を露出させたらメッキ法で外部接続電極８５，８６を形成する。最後に切断してＬＥＤ装置８０を得る。 A method of making the LED device 80 will be described. First, a plurality of LED dies 20a are prepared, and the LED dies 20a are arranged on the adhesive sheet so that the p-side and n-side electrodes 25a and 26a are submerged in the adhesive layer. Next, after the phosphor layer 83 and the transparent layer 82 are formed over the entire pressure-sensitive adhesive sheet, the portion where the side reflecting member 81b is formed is half-diced and reflected so as to cover the groove and the transparent layer 82 formed by the half-dicing. The member 81 is applied and cured. Subsequently, the adhesive sheet is peeled off. At this time, the bottom surface of the LED die 20a is exposed. Subsequently, the bottom reflecting member 84 is applied and cured on the electrode surface side of the LED die 20a, and after the surfaces of the p-side and n-side electrodes 25a and 26a are exposed by polishing or the like, external connection electrodes 85 and 86 are formed by plating. To do. Finally, the LED device 80 is obtained by cutting.
図１１によりＬＥＤ装置８０を備えた本発明の第３実施形態における照明装置９０を説明する。図１１は照明装置９０の平面図である。照明装置９０はマザー基板９２上に２枚の反射板９１を配置したもので、２枚の反射板９１の間に複数のＬＥＤ装置８０がそれぞれの側部反射部材８１ｂ（図９参照）を隣接させるようにして一列に並んでいる。ＬＥＤ装置８０は図の左右方向に光を出射し、反射板９１は紙面の手前側に光を向ける。ＬＥＤ装置８０は紙面の表裏方向に発光色の分布があるため、照明装置９０には平面的な発光色の分布ができる。 An illumination device 90 according to a third embodiment of the present invention including the LED device 80 will be described with reference to FIG. FIG. 11 is a plan view of the lighting device 90. The illuminating device 90 has two reflecting plates 91 arranged on a mother substrate 92, and a plurality of LED devices 80 adjoin each side reflecting member 81b (see FIG. 9) between the two reflecting plates 91. They are arranged in a row. The LED device 80 emits light in the left-right direction in the figure, and the reflecting plate 91 directs light toward the front side of the drawing. Since the LED device 80 has a light emission color distribution in the front and back direction of the paper surface, the illumination device 90 has a flat light emission color distribution.
第１及び第３実施形態におけるＬＥＤ装置１０，８０は蛍光体層１３，８３と透明層１２，８２を積層して、透光性部材における蛍光体の濃度分布を不均一にしていたが、積層する層をさらに増やしても良い。例えば最下層を赤発光する蛍光体層、中間を緑発光する蛍光体層、最上層を透明層としても良い。また積層する順番を変えても良い。 In the LED devices 10 and 80 in the first and third embodiments, the phosphor layers 13 and 83 and the transparent layers 12 and 82 are laminated to make the phosphor concentration distribution in the translucent member non-uniform. Additional layers may be added. For example, the lowermost layer may be a phosphor layer that emits red light, the middle layer may be a phosphor layer that emits green light, and the uppermost layer may be a transparent layer. The order of stacking may be changed.
第２実施形態におけるＬＥＤ装置５０では蛍光体の沈降を途中で止めることにより蛍光体層５２の蛍光体濃度を徐々に変化させていたが、蛍光体濃度の異なる層を積層しても良い。この方法であれば回路基板側１４の蛍光体濃度を薄くし反射部材５１側の蛍光体濃度を濃くできる。 In the LED device 50 in the second embodiment, the phosphor concentration of the phosphor layer 52 is gradually changed by stopping the sedimentation of the phosphor, but layers having different phosphor concentrations may be stacked. With this method, the phosphor concentration on the circuit board side 14 can be reduced and the phosphor concentration on the reflecting member 51 side can be increased.
１０，５０，８０…ＬＥＤ装置（半導体発光装置）、
１１，５１，８１…反射部材、
１２，８２…透明層（透光性部材）、
１３，５２，８３…蛍光体層（透光性部材）、
１４…回路基板、
１５，１６，８５，８６…外部接続電極、
１５ａ，１６ａ…内部接続電極、
１５ｂ，１６ｂ…スルーホール電極、
２０，２０ａ…ＬＥＤダイ（半導体発光素子）、
２１，２１ａ…サファイア基板、
２２，２２ａ…ｎ型半導体層、
２３，２３ａ…ｐ型半導体層、
２４，２４ａ…絶縁膜、
２５，２５ａ…ｐ側電極、
２６，２６ａ…ｎ側電極、
４０，７０，９０…照明装置、
４１，９１…反射板（光学部材）、
７１…導光板（光学部材）、
７１ａ…プリズム、
４２，７２，９２…マザー基板、
８１ａ…上部反射部材、
８１ｂ…側部反射部材、
８４…底部反射部材、
Ｌ１〜Ｌ８…光線。
10, 50, 80 ... LED device (semiconductor light emitting device),
11, 51, 81 ... reflective member,
12, 82 ... transparent layer (translucent member),
13, 52, 83 ... phosphor layer (translucent member),
14 ... circuit board,
15, 16, 85, 86 ... external connection electrodes,
15a, 16a ... internal connection electrodes,
15b, 16b ... through-hole electrodes,
20, 20a ... LED die (semiconductor light emitting element),
21, 21a ... sapphire substrate,
22, 22a ... n-type semiconductor layer,
23, 23a ... p-type semiconductor layer,
24, 24a ... insulating film,
25, 25a ... p-side electrode,
26, 26a ... n-side electrode,
40, 70, 90 ... lighting device,
41, 91 ... reflector (optical member),
71 ... Light guide plate (optical member),
71a ... prism,
42, 72, 92 ... Mother board,
81a ... upper reflecting member,
81b ... side reflecting member,
84 ... bottom reflecting member,
L1 to L8 ... rays.
Claims (9)
前記透光性部材に含まれる蛍光体の濃度分布が前記反射部材から下方向に向かって不均一であることを特徴とする半導体発光装置。 In a semiconductor light emitting device including a reflective member on a light transmissive member covering the semiconductor light emitting element,
2. A semiconductor light emitting device according to claim 1, wherein the concentration distribution of the phosphor contained in the translucent member is not uniform downward from the reflecting member.
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