JP2013074073A - 薄膜トランジスタ、その製造方法、および表示装置 - Google Patents
薄膜トランジスタ、その製造方法、および表示装置 Download PDFInfo
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
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- 238000000137 annealing Methods 0.000 claims description 13
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- 239000011701 zinc Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
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- 230000001681 protective effect Effects 0.000 description 35
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- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
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- 238000010586 diagram Methods 0.000 description 10
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】薄膜トランジスタ1は、基板100と、前記基板上の一部に設けられたゲート電極110と、前記ゲート電極を覆う第1の絶縁膜120と、前記第1の絶縁膜を介して前記ゲート電極上に設けられた酸化物半導体膜130と、前記酸化物半導体膜上の一部に設けられた第2の絶縁膜150と、前記酸化物半導体膜から露出する酸化物半導体膜の一部と接続されたソース電極140Sおよびドレイン電極140Dと、を備え、前記酸化物半導体膜はInと、Gaと、Znのうち少なくとも一つの元素を含む酸化物半導体を有し、前記第1の絶縁膜中に含有される水素濃度が5×1020atm/cm−3以上であり、かつ、前記第2の絶縁膜中に含有される水素濃度が1019atm/cm−3以下である。
【選択図】図1
Description
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1(a)は、第1の実施形態に係る薄膜トランジスタ1の構造を示す断面模式図である。図1(b)は第1の実施形態に係る薄膜トランジスタ1の構造を示す平面模式図である。 図1(a)は、図1(b)のA−A線断面を示す。
以下、本発明の第2の実施形態に係る薄膜トランジスタ2の製造方法を説明する。図6は、第2の実施形態に係る薄膜トランジスタ2の製造方法を示す断面模式図である。第2の実施形態においては、ゲート絶縁膜120を形成する際に水素、アルゴンおよび酸素の混合ガスを用いる点が第1の実施形態と異なる。薄膜トランジスタ2の構成は第1の実施形態と同じであるので、同じ部分には同じ符号を付する。
以下、本発明の第3の実施形態に係る薄膜トランジス3の製造方法を説明する。図7は、第3の実施形態に係る薄膜トランジスタ3の製造方法を示す断面模式図である。第3の実施形態においては、ゲート絶縁膜120をCVD法により形成し、シラン(SiH4)、一酸化窒素(N2O)、およびアルゴン(Ar)の混合ガスを用いる点が第1の実施形態と異なる。薄膜トランジスタ3の構成は第1の実施形態と同じであるので、同じ部分には同じ符号を付する。
図8は、第4の実施形態に係る表示装置を表す平面図である。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
制御線、DL 信号線、10 有機電界発光層、11 基板11、12 陽極、13 正孔輸送層、14 発光層、15 電子輸送層、16 電子注入層、17 陰極、21 画素、25 表示素子、26 薄膜トランジスタ、22信号線駆動回路、23 制御線駆動回路、24 コントローラ、100 基板、110 ゲート電極、120 ゲート絶縁膜、130 酸化物半導体膜、130a 酸化物半導体膜、130b 酸化物半導体膜、140S ソース電極、140D ドレイン電極、150 チャネル保護膜、160 封止層
Claims (11)
- 基板と、
前記基板上の一部に設けられたゲート電極と、
前記ゲート電極を覆う第1の絶縁膜と、
前記第1の絶縁膜を介して前記ゲート電極上に設けられた酸化物半導体膜と、
前記酸化物半導体膜上の一部に設けられた第2の絶縁膜と、
前記酸化物半導体膜から露出する酸化物半導体膜の一部と接続されたソース電極およびドレイン電極と、
を備え、
前記酸化物半導体膜はInと、Gaと、Znのうち少なくとも一つの元素を含む酸化物半導体を有し、
前記第1の絶縁膜中に含有される水素濃度が5×1020atm/cm−3以上であり、かつ、前記第2の絶縁膜中に含有される水素濃度が1019atm/cm−3以下である薄膜トランジスタ。 - 前記酸化物半導体膜は、インジウムガリウム亜鉛酸化物である請求項1に記載の薄膜トランジスタ。
- 基板と、前記基板上の一部に設けられたゲート電極と、前記ゲート電極を覆う第1の絶縁膜と、前記第1の絶縁膜を介して前記ゲート電極上に設けられた酸化物半導体膜と、前記酸化物半導体膜上の一部に設けられた第2の絶縁膜と、前記酸化物半導体膜から露出する酸化物半導体膜の一部と接続されたソース電極およびドレイン電極と、を備え、前記酸化物半導体膜はInと、Gaと、Znのうち少なくとも一つの元素を含む酸化物半導体を有し、前記第1の絶縁膜中に含有される水素濃度が5×1020atm/cm−3以上であり、かつ、前記第2の絶縁膜中に含有される水素濃度が1019atm/cm−3以下である薄膜トランジスタと、
前記薄膜トランジスタの前記ソース電極または前記ドレイン電極と接続された第1の電極と、
前記第1の電極と対向する第2の電極と、
前記第1の電極と前記第2の電極の間に設けられた表示層と、
を備える表示装置。 - 前記表示層は、有機電界発光層である請求項3に記載の表示装置。
- 基板上の一部にゲート電極を形成する工程と、
前記ゲート電極を覆い含有される水素濃度が5×1020atm/cm−3以上である第1の絶縁膜を形成する工程と、
Inと、Gaと、Znのうち少なくとも一つの元素を含む酸化物半導体を用いて前記第1の絶縁膜上に前記ゲート電極と対向するように酸化物半導体膜を形成する工程と、
前記酸化物半導体膜上の一部に、含有される水素濃度が1019atm/cm−3以下である第2の絶縁膜を形成する工程と、
前記酸化物半導体膜から露出する酸化物半導体膜と接続されるソース電極およびドレイン電極とを形成する工程と、
を有する薄膜トランジスタの製造方法。 - 前記第1の絶縁膜を形成する工程は、スパッタリング法を用い、前記第1の絶縁膜を形成した後に200度以上でアニールすることにより行う請求項5に記載の薄膜トランジスタの製造方法。
- 前記第1の絶縁膜を形成する工程は、水素を0.5%以上10%以下含むフォーミングガスを用いてスパッタリング法により行う請求項5または請求項6に記載の薄膜トランジスタの製造方法。
- 前記フォーミングガスは、窒素と水素とを含有するフォーミングガスまたはアルゴンと酸素と水素とを含有するフォーミングガスである請求項7に記載の薄膜トランジスタの製造方法。
- 前記第1の絶縁膜を形成する工程は、スパッタリング法を用いて成膜した後に30分以上アニール処理を施すことにより行う請求項5に記載の薄膜トランジスタの製造方法。
- 前記第1の絶縁膜を形成する工程は、CVD法を用い、一酸化窒素とアルゴンとシランとを含有しシラン濃度が0.5%以上10%以下である混合ガスを用いることにより行う請求項5に記載の薄膜トランジスタの製造方法。
- 前記第2の絶縁膜を形成する工程は、スパッタリング法を用い、真空度を10−4Pa以下とすることにより行う請求項5に記載の薄膜トランジスタの製造方法。
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