JP2013070112A - 電気機械変換装置の製造方法 - Google Patents
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- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0075—For improving wear resistance
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0221—Variable capacitors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0369—Static structures characterized by their profile
- B81B2203/0392—Static structures characterized by their profile profiles not provided for in B81B2203/0376 - B81B2203/0384
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Abstract
【解決手段】電気機械変換装置の製造方法において、第一の基板1の上に第一の絶縁層2を形成し、第一の絶縁層2の一部を第一の基板1まで除去して隔壁3を形成し、第一の絶縁層2の一部が除去された第一の基板1の領域上に第二の絶縁層10を形成する。次に、第二の基板18を隔壁3の上に接合して間隙24を形成し、第二の基板18から、間隙24を介して第二の絶縁層10と対向する振動膜23を形成する。隔壁3を形成する工程では、第一の基板1に垂直な方向において間隙24側の高さが中央部の高さよりも低くなるように隔壁3を形成する。
【選択図】図1−1
Description
Micromachined Ultrasonic Transducer)は、圧電素子の代替品として研究されている。このCMUTによると、振動膜の振動を用いて超音波を送信、受信でき、特に、液中において優れた広帯域特性が容易に得られる。
Vapor Deposition)或いは、熱酸化等によって形成できる。熱酸化は、酸素と水素を用いるウェット酸化や、酸素を用いるドライ酸化で行う事ができる。酸化温度は、800度〜1100度程度が好ましい。
(実施例1)(階段状の隔壁を設けた場合の実施例)
実施例1の静電容量型トランスデューサの製造方法を図1、図2、図3を用いて説明する。本実施例は、上記実施形態にほぼ対応する。
実施例2の静電容量型トランスデューサの製造方法を図5、図2、図6を用いて説明する。本実施例の製造方法は、実施例1とほぼ同様である。図5−1と図5−2は、本実施例の製造方法を説明するための断面図であり、図2は、本実施例の静電容量型トランスデューサの上面図である。図2のA-A’断面図が、図5−2(g)である。図6は図5−1(c)の一部拡大図である。実施例2では、傾斜状の隔壁3を形成する。
Claims (7)
- 第一の基板の上に第一の絶縁層を形成し、前記第一の絶縁層の一部を前記第一の基板まで除去して隔壁を形成する工程と、
前記第一の絶縁層の一部が除去された前記第一の基板の領域上に第二の絶縁層を形成する工程と、
第二の基板を前記隔壁の上に接合して間隙を形成する工程と、
前記第二の基板から、前記間隙を介して前記第二の絶縁層と対向する振動膜を形成する工程と、
を有する電気機械変換装置の製造方法であって、
前記隔壁を形成する工程では、前記第一の基板に垂直な方向において前記隔壁の間隙側の高さが中央部の高さよりも低くなるように前記隔壁を形成することを特徴とする電気機械変換装置の製造方法。 - 前記第一の基板は、シリコン基板であることを特徴とする請求項1に記載の電気機械変換装置の製造方法。
- 前記第二の基板は、シリコン基板であることを特徴とする請求項1または2に記載の電気機械変換装置の製造方法。
- 前記第二の絶縁層は、酸化膜であることを特徴とする請求項1から3の何れか1項に記載の電気機械変換装置の製造方法。
- 前記振動膜は、前記第二の基板を薄化して形成することを特徴とする請求項1から4の何れか1項に記載の電気機械変換装置の製造方法。
- 前記隔壁の壁面は、少なくとも1段以上の階段状、または傾斜状であることを特徴とする請求項1から5の何れか1項に記載の電気機械変換装置の製造方法。
- 前記隔壁を形成する工程では、前記第二の絶縁層を形成する工程の後における前記隔壁の間隙側の高さが中央部の高さより高くならないよう、前記隔壁を形成することを特徴とする請求項1乃至6の何れか1項に記載の電気機械変換装置の製造方法。
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JP2011204970A JP5896665B2 (ja) | 2011-09-20 | 2011-09-20 | 電気機械変換装置の製造方法 |
KR1020120099744A KR101473709B1 (ko) | 2011-09-20 | 2012-09-10 | 전기기계 변환장치의 제조 방법 |
US13/610,219 US8518733B2 (en) | 2011-09-20 | 2012-09-11 | Method of manufacturing an electromechanical transducer |
EP12006480.3A EP2572804A3 (en) | 2011-09-20 | 2012-09-14 | Method of manufacturing an electromechanical transducer |
CN201210344319.7A CN103011054B (zh) | 2011-09-20 | 2012-09-17 | 机电换能器的制造方法 |
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JP2011204970A JP5896665B2 (ja) | 2011-09-20 | 2011-09-20 | 電気機械変換装置の製造方法 |
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JP2013070112A true JP2013070112A (ja) | 2013-04-18 |
JP2013070112A5 JP2013070112A5 (ja) | 2015-05-07 |
JP5896665B2 JP5896665B2 (ja) | 2016-03-30 |
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US (1) | US8518733B2 (ja) |
EP (1) | EP2572804A3 (ja) |
JP (1) | JP5896665B2 (ja) |
KR (1) | KR101473709B1 (ja) |
CN (1) | CN103011054B (ja) |
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JP5511260B2 (ja) * | 2009-08-19 | 2014-06-04 | キヤノン株式会社 | 容量型電気機械変換装置、及びその感度調整方法 |
JP5479390B2 (ja) * | 2011-03-07 | 2014-04-23 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
JP6381195B2 (ja) | 2013-10-22 | 2018-08-29 | キヤノン株式会社 | 静電容量型トランスデューサ及びその作製方法 |
EP3245156B1 (en) * | 2015-01-16 | 2021-09-08 | Université Gustave Eiffel | Miniature kinetic energy harvester for generating electrical energy from mechanical vibrations |
CN105036058B (zh) * | 2015-05-27 | 2016-10-05 | 华南理工大学 | 集成化电容式微加工超声换能器及其制备方法 |
JP6606034B2 (ja) * | 2016-08-24 | 2019-11-13 | 株式会社日立製作所 | 容量検出型超音波トランスデューサおよびそれを備えた超音波撮像装置 |
KR20220098075A (ko) | 2021-01-02 | 2022-07-11 | 김동호 | 참여용 골인보드 |
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Patent Citations (2)
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US20090142872A1 (en) * | 2007-10-18 | 2009-06-04 | Kwan Kyu Park | Fabrication of capacitive micromachined ultrasonic transducers by local oxidation |
JP2010030034A (ja) * | 2008-06-24 | 2010-02-12 | Canon Inc | 機械電気変換素子及び機械電気変換装置の製造方法 |
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US20130071964A1 (en) | 2013-03-21 |
KR101473709B1 (ko) | 2014-12-17 |
US8518733B2 (en) | 2013-08-27 |
CN103011054A (zh) | 2013-04-03 |
KR20130031206A (ko) | 2013-03-28 |
EP2572804A2 (en) | 2013-03-27 |
EP2572804A3 (en) | 2017-12-27 |
CN103011054B (zh) | 2015-10-14 |
JP5896665B2 (ja) | 2016-03-30 |
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