JP2013026398A - 半導体装置とその製造方法、配線基板、及び電子装置 - Google Patents
半導体装置とその製造方法、配線基板、及び電子装置 Download PDFInfo
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Abstract
【解決手段】配線基板22と、配線基板の第1の主面22aに搭載された半導体素子23と、配線基板の第2の主面22bに設けられた電源用又は接地用のはんだボール36と、第2の主面22bに立設された信号用の長尺状の導電片35とを有する半導体装置による。
【選択図】図14
Description
図7は、本実施形態に係る半導体装置21の平面図である。
次に、第2実施形態に係る半導体装置について、その製造工程を追いながら説明する。なお、本実施形態は、配線基板22への導電ピン35の固定方法のみが第1実施形態と相違し、それ以外については第1実施形態と同様である。
次に、第3実施形態に係る半導体装置について、その製造工程を追いながら説明する。なお、本実施形態が第2実施形態と相違するのは導電ピン35の形状のみであり、それ以外は第2実施形態と同様である。
上記した第1〜第3実施形態では、信号用の外部接続端子として導電ピン35を形成した。
本実施形態では、第1〜第4実施形態で説明した導電ピン35の配置例や、導電ピン35が接合される第2のランド59bの好適な大きさ等について説明する。
図28は、第1例に係る配線基板22の拡大平面図である。なお、図28において、第1〜第4実施形態で説明したのと同じ要素にはこれらの実施形態におけるのと同じ符号を付し、以下ではその説明を省略する。これについては、後述の第2〜第5例でも同様である。
図29は、第2例に係る配線基板22の拡大平面図である。
図30は、第3例に係る配線基板22の拡大平面図である。
図31は、第4例に係る配線基板22の拡大平面図である。
図32は、第5例に係る配線基板22の拡大平面図である。
(第6実施形態)
上記した第1〜第5実施形態では、図8に示したように、インターポーザとして供される配線基板22の外部接続端子の一部を導電ピン35とし、残りの外部接続端子をはんだボール36とした。
前記配線基板の第1の主面に搭載された半導体素子と、
前記配線基板の第2の主面に設けられた電源用又は接地用のはんだボールと、
前記第2の主面に立設された信号用の長尺状の導電片と、
を有することを特徴とする半導体装置。
前記第2の主面において前記第1のランドと間隔をおいて形成され、前記第1のランドよりも直径が小さい第2のランドとを更に有し、
前記第1のランドに前記はんだボールが接合され、前記第2のランドに前記導電片が接合されたことを特徴とする付記1〜6のいずれかに記載の半導体装置。
前記多層配線層の主面に設けられ、前記第1の配線層と電気的に接続されたはんだボールと、
前記主面に設けられ、前記第2の配線層と電気的に接続された長尺状の導電片と、
を有することを特徴とする配線基板。
前記はんだボールが接合した第1のパッドと、前記導電片の先端に当接した第2のパッドとを備えた配線基板と、
を有することを特徴とする電子装置。
半導体装置が備える電源用又は接地用のはんだボールを前記第1のパッドに当接させると共に、前記半導体装置が備える信号用の長尺状の導電片の先端を前記はんだに当接させる工程と、
前記はんだと前記はんだボールとを加熱して溶融させることにより、前記はんだを介して前記第2のパッドに前記導電片を接続すると共に、前記第1のパッドに前記はんだボールを接続する工程と、
を有することを特徴とする電子装置の製造方法。
Claims (5)
- 配線基板と、
前記配線基板の第1の主面に搭載された半導体素子と、
前記配線基板の第2の主面に設けられた電源用又は接地用のはんだボールと、
前記第2の主面に立設された信号用の長尺状の導電片と、
を有することを特徴とする半導体装置。 - 前記導電片は導電ピンであることを特徴とする請求項1に記載の半導体装置。
- 電源用又は接地用の第1の配線層と、信号用の第2の配線層とを備えた多層配線層と、
前記多層配線層の主面に設けられ、前記第1の配線層と電気的に接続されたはんだボールと、
前記主面に設けられ、前記第2の配線層と電気的に接続された長尺状の導電片と、
を有することを特徴とする配線基板。 - 電源用又は接地用のはんだボールと、信号用の長尺状の導電片とが主面に設けられた半導体装置と、
前記はんだボールが接合した第1のパッドと、前記導電片の先端に当接した第2のパッドとを備えた配線基板と、
を有することを特徴とする電子装置。 - 配線基板が備える第1のパッドと第2のパッドのうち、少なくとも第2のパッドにはんだを塗布する工程と、
半導体装置が備える電源用又は接地用のはんだボールを前記第1のパッドに当接させると共に、前記半導体装置が備える信号用の長尺状の導電片の先端を前記はんだに当接させる工程と、
前記はんだと前記はんだボールとを加熱して溶融させることにより、前記はんだを介して前記第2のパッドに前記導電片を接続すると共に、前記第1のパッドに前記はんだボールを接続する工程と、
を有することを特徴とする電子装置の製造方法。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209321A (ja) * | 1997-01-20 | 1998-08-07 | Hitachi Ltd | 半導体集積回路装置 |
JP2001217356A (ja) * | 1999-11-26 | 2001-08-10 | Ibiden Co Ltd | 多層回路基板および半導体装置 |
JP2011040575A (ja) * | 2009-08-11 | 2011-02-24 | Nec Corp | 電子デバイス及びその製造方法 |
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- 2011-07-20 JP JP2011159097A patent/JP5803005B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209321A (ja) * | 1997-01-20 | 1998-08-07 | Hitachi Ltd | 半導体集積回路装置 |
JP2001217356A (ja) * | 1999-11-26 | 2001-08-10 | Ibiden Co Ltd | 多層回路基板および半導体装置 |
JP2011040575A (ja) * | 2009-08-11 | 2011-02-24 | Nec Corp | 電子デバイス及びその製造方法 |
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