JP2013016615A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2013016615A JP2013016615A JP2011148040A JP2011148040A JP2013016615A JP 2013016615 A JP2013016615 A JP 2013016615A JP 2011148040 A JP2011148040 A JP 2011148040A JP 2011148040 A JP2011148040 A JP 2011148040A JP 2013016615 A JP2013016615 A JP 2013016615A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】本半導体モジュールは、半導体素子と、前記半導体素子と電気的に接続されるコンデンサと、冷却器と、を備え、前記半導体素子と前記コンデンサとは、前記冷却器を挟んで積層されており、積層方向から視て、前記半導体素子は前記コンデンサと重複する位置に配置されている。
【選択図】図4
Description
図1は、第1の実施の形態に係る半導体モジュールを例示する正面図である。図2は、第1の実施の形態に係る半導体モジュールを例示する背面図である。図3は、第1の実施の形態に係る半導体モジュールの一部を例示する正面図である。図4は、図1のA−A線に沿う断面図である。なお、図3は、図1から後述するバスバー40及び50、半導体素子44及び54、固定手段63及び64を削除した図である。
第1の実施の形態の変形例1では、コンデンサの電極と端子との接続を変更した例を示す。なお、第1の実施の形態の変形例1において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第1の実施の形態の変形例2では、バスバーと冷却フィンとを別体で形成し、それらを絶縁シートで接合した例を示す。なお、第1の実施の形態の変形例2において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第2の実施の形態では、第1の実施の形態に係る半導体モジュールにおいて、バスバーにリアクトルを搭載した例を示す。なお、第2の実施の形態において、既に説明した実施の形態と同一構成部品についての説明は省略する。
20 本体
30、120 コンデンサ
30x、30y、90x 凹部
31〜38、91、92、93〜96、P、N 端子
31x ねじ穴
40、50 バスバー
41 冷却フィン
42 絶縁膜
43 接合部
44、54 半導体素子
49 絶縁シート
61、62 シール部材
63、64 固定手段
65、66 冷却器
71 導入口
72 導出口
90、115 リアクトル
100 蓄電池
110 昇降圧コンバータ
111、112、131〜136 スイッチング素子
113、114、141〜146 ダイオード
130 インバータ
150 モータ
151、152、153 コイル
V1、V2 電圧
Claims (5)
- 半導体素子と、
前記半導体素子と電気的に接続されるコンデンサと、
冷却器と、を備え、
前記半導体素子と前記コンデンサとは、前記冷却器を挟んで積層されており、
積層方向から視て、前記半導体素子は前記コンデンサと重複する位置に配置されている半導体モジュール。 - 前記半導体素子は、シリコンカーバイド(SiC)を主成分とする請求項1記載の半導体モジュール。
- 積層方向から視て、前記冷却器内の少なくとも前記半導体素子と重複する領域には冷媒が循環している請求項1又は2記載の半導体モジュール。
- 前記半導体素子に積層してリアクトルが設けられている請求項1乃至3の何れか一項記載の半導体モジュール。
- 前記リアクトルは、前記半導体素子を実装する金属部材を介して、前記冷却器に接している請求項4記載の半導体モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011148040A JP5488540B2 (ja) | 2011-07-04 | 2011-07-04 | 半導体モジュール |
US13/448,915 US8604608B2 (en) | 2011-07-04 | 2012-04-17 | Semiconductor module |
CN201210228489.9A CN102867794B (zh) | 2011-07-04 | 2012-07-02 | 半导体模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011148040A JP5488540B2 (ja) | 2011-07-04 | 2011-07-04 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013016615A true JP2013016615A (ja) | 2013-01-24 |
JP5488540B2 JP5488540B2 (ja) | 2014-05-14 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011148040A Expired - Fee Related JP5488540B2 (ja) | 2011-07-04 | 2011-07-04 | 半導体モジュール |
Country Status (3)
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US (1) | US8604608B2 (ja) |
JP (1) | JP5488540B2 (ja) |
CN (1) | CN102867794B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015011844A (ja) * | 2013-06-28 | 2015-01-19 | 三洋電機株式会社 | 車載用の電源装置及び電源装置を備える車両並びにバスバー |
US9064846B2 (en) | 2013-09-05 | 2015-06-23 | Mitsubishi Electric Corporation | Semiconductor device |
JP2018032710A (ja) * | 2016-08-24 | 2018-03-01 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び製造方法 |
JP2020053481A (ja) * | 2018-09-25 | 2020-04-02 | トヨタ自動車株式会社 | 半導体装置 |
JPWO2020196333A1 (ja) * | 2019-03-22 | 2021-10-21 | 昭和電工マテリアルズ株式会社 | 冷却構造体 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107785361B (zh) * | 2016-08-26 | 2020-06-30 | 台达电子企业管理(上海)有限公司 | 功率集成模块 |
US10629550B2 (en) | 2012-10-31 | 2020-04-21 | Delta Electronics (Shanghai) Co., Ltd | Power integrated module |
CN105023893A (zh) * | 2015-07-20 | 2015-11-04 | 南通明诺机械有限公司 | 一种集成功率控制单元 |
US10331182B2 (en) * | 2015-07-31 | 2019-06-25 | Hewlett Packard Enterprise Development Lp | Heat exchangers |
US20170229377A1 (en) * | 2016-02-04 | 2017-08-10 | International Business Machines Corporation | Liquid manifold structure for direct cooling of lidded electronics modules |
US9998055B2 (en) | 2016-04-14 | 2018-06-12 | Caterpillar Inc. | Low inductance power electronics configuration for electric drive systems |
JP6816691B2 (ja) * | 2017-09-29 | 2021-01-20 | 三菱電機株式会社 | 半導体装置 |
JP2019180113A (ja) * | 2018-03-30 | 2019-10-17 | 本田技研工業株式会社 | 電力変換装置 |
CN108401405B (zh) * | 2018-04-28 | 2019-09-27 | 合肥巨一动力***有限公司 | 水冷电机控制器 |
Citations (4)
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JP2002034268A (ja) * | 2000-07-18 | 2002-01-31 | Toshiba Corp | 電力変換装置 |
JP2010252461A (ja) * | 2009-04-14 | 2010-11-04 | Denso Corp | 電力変換装置 |
JP2011103756A (ja) * | 2009-11-12 | 2011-05-26 | Toyota Motor Corp | 半導体電力変換装置 |
JP2011115020A (ja) * | 2009-11-30 | 2011-06-09 | Toyota Motor Corp | パワーユニット |
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JP3873743B2 (ja) | 1999-10-27 | 2007-01-24 | 株式会社日立製作所 | 電力変換装置 |
US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
JP4424918B2 (ja) | 2003-03-24 | 2010-03-03 | 東芝エレベータ株式会社 | 電力変換装置 |
EP1596434B1 (en) * | 2003-09-04 | 2018-12-05 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
JP4661645B2 (ja) | 2005-03-23 | 2011-03-30 | トヨタ自動車株式会社 | パワー半導体モジュール |
JP4857889B2 (ja) * | 2006-04-26 | 2012-01-18 | 株式会社明電舎 | 電力変換装置の冷却、防音構造 |
JP5098522B2 (ja) | 2007-08-30 | 2012-12-12 | 株式会社村田製作所 | インバータ装置の設計方法 |
JP4708459B2 (ja) * | 2008-07-29 | 2011-06-22 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP5378413B2 (ja) * | 2008-12-19 | 2013-12-25 | 東芝三菱電機産業システム株式会社 | 電源装置 |
JP5212088B2 (ja) | 2008-12-25 | 2013-06-19 | 株式会社デンソー | 半導体モジュール冷却装置 |
-
2011
- 2011-07-04 JP JP2011148040A patent/JP5488540B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-17 US US13/448,915 patent/US8604608B2/en active Active
- 2012-07-02 CN CN201210228489.9A patent/CN102867794B/zh not_active Expired - Fee Related
Patent Citations (4)
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JP2002034268A (ja) * | 2000-07-18 | 2002-01-31 | Toshiba Corp | 電力変換装置 |
JP2010252461A (ja) * | 2009-04-14 | 2010-11-04 | Denso Corp | 電力変換装置 |
JP2011103756A (ja) * | 2009-11-12 | 2011-05-26 | Toyota Motor Corp | 半導体電力変換装置 |
JP2011115020A (ja) * | 2009-11-30 | 2011-06-09 | Toyota Motor Corp | パワーユニット |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015011844A (ja) * | 2013-06-28 | 2015-01-19 | 三洋電機株式会社 | 車載用の電源装置及び電源装置を備える車両並びにバスバー |
US9064846B2 (en) | 2013-09-05 | 2015-06-23 | Mitsubishi Electric Corporation | Semiconductor device |
JP2018032710A (ja) * | 2016-08-24 | 2018-03-01 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び製造方法 |
JP2020053481A (ja) * | 2018-09-25 | 2020-04-02 | トヨタ自動車株式会社 | 半導体装置 |
JP7091972B2 (ja) | 2018-09-25 | 2022-06-28 | 株式会社デンソー | 半導体装置 |
JPWO2020196333A1 (ja) * | 2019-03-22 | 2021-10-21 | 昭和電工マテリアルズ株式会社 | 冷却構造体 |
JP7164021B2 (ja) | 2019-03-22 | 2022-11-01 | 昭和電工マテリアルズ株式会社 | 冷却構造体 |
US11778776B2 (en) | 2019-03-22 | 2023-10-03 | Resonac Corporation | Cooling structure |
Also Published As
Publication number | Publication date |
---|---|
CN102867794A (zh) | 2013-01-09 |
US20130009168A1 (en) | 2013-01-10 |
JP5488540B2 (ja) | 2014-05-14 |
US8604608B2 (en) | 2013-12-10 |
CN102867794B (zh) | 2015-06-03 |
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