JP2012532459A - 垂直ピラー相互接続方法及び構造体 - Google Patents
垂直ピラー相互接続方法及び構造体 Download PDFInfo
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- JP2012532459A JP2012532459A JP2012518576A JP2012518576A JP2012532459A JP 2012532459 A JP2012532459 A JP 2012532459A JP 2012518576 A JP2012518576 A JP 2012518576A JP 2012518576 A JP2012518576 A JP 2012518576A JP 2012532459 A JP2012532459 A JP 2012532459A
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- solder
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- vertical pillar
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Abstract
ウエハレベルチップスケールパッケージング及びアセンブリにおいて、垂直ピラー上にはんだキャップを形成する。一実施例では、垂直ピラーを半導体基板上に位置させる。少なくとも1種類の微量元素をドーピングしうるはんだペーストをピラー構造体の頂面上に被着する。このはんだペーストの被着後にリフロー処理を行ってはんだキャップを形成する。
Description
本発明は、一般に半導体デバイスのための構造体、デバイス、システム及び方法に関するものであり、特に電子ウエハレベルチップスケールパッケージ及びフリップチップパッケージ並びにアセンブリのための構造体、デバイス、システム及び方法に関するものである。
[関連出願]
本出願は、(“METHOD FOR BUILDING CU PILLAR INTERCONNECT”と題する)2009年7月2日に出願された米国特許仮出願第61/222,839号の優先権を主張するものであり、この米国特許仮出願の全体は参考のために導入するものである。
本出願は、(“METHOD FOR BUILDING CU PILLAR INTERCONNECT”と題する)2009年7月2日に出願された米国特許仮出願第61/222,839号の優先権を主張するものであり、この米国特許仮出願の全体は参考のために導入するものである。
一種の垂直相互接続技術である銅ピラーバンプは、当業者にとって既知の銅ピラーバンピング技術を用いて半導体チップ又はその他のマイクロ電子デバイスの接着パッドに被着しうる。銅ピラーバンプはチップ/デバイス上に配置されるが、これらのチップ/デバイスは依然としてウエハの形態にある。はんだに基づくフリップチップ式とチップスケールパッケージ(CSP)式との双方又は何れか一方の相互接続体(バンプ)の全てには、ウエハ/基板金属化部とはんだバンプ自体との間の接着層/拡散障壁として作用するのに適切なバンプ下地金属(UBM)が必要となる。はんだバンプをウエハ上に形成するのに、信頼性があり/製造可能な方法が用いられれば、ピラーバンプ(銅、金又はその他の金属/合金)は、機能的なUBMとして用いられる可能性がある。
銅ピラーバンプは、代表的なはんだバンプ又はCSP相互接続部と比べて剛性である垂直構造体を提供する。デバイス及びこれに関連する基板のような2つの表面間のスタンドオフの制御が必要となる分野では、銅ピラーバンプがその距離を制御するための固定のスタンドオフとして作用し、一方、はんだはこれらの2つの表面間の連結接続部として機能する。このスタンドオフの制御は、全システム性能及び信頼性にとって欠かせないものである。銅(Cu)ピラーバンプ構造体も、これと等価なフリップチップ又はCSPはんだバンプ構造体と比べて改善された熱伝達及び抵抗率を提供する。
銅ピラーバンプ構造体には、マイクロエレクトロニクス業界におけるある市場に対して費用対効果が良く信頼性がある相互接続の選択肢とする可能性がある。しかし、信頼性があり廉価である製造可能な方法が、これらの多目的な固定のスタンドオフバンプ構造体を構築するのに必要となる。殆どのピラーバンプ製造方法では、感光性マスク材料を用いてCuピラー構造体を電気めっきし、これに続いて電気めっきされたはんだを設けている。はんだをめっきする処理は低速で高価な処理であり、これには多大な処理制御が必要となるとともに、はんだを狭い提供範囲である単一元素金属のはんだ又は2元素金属合金のはんだに厳密に制限する。代表的には、2元素よりも多い元素の合金であるはんだを電気めっきするのは、製造環境で制御する上で極めて困難である。しかし、半導体業界では、種々の複数元素の合金又は微量元素がドーピングされた合金を使用して、目的とする分野又は最終用途に対する相互接続の信頼性を改善するのが望ましい。
本発明の上述した及びその他の特徴、観点及び利点は、以下の説明及び添付図面から更に良好に理解されるであろう。図面中、同じ符号は対応する素子を示すものである。
以下の説明は本発明の特定の実施例に対するものであり、本発明をこれらの実施例に限定するものではない。
以下の説明では、詳細にするために種々の細部を説明している。しかし、これらの特定の細部がなくても、本発明の方法及び構造を実施しうること当業者にとって明らかである。或いはまた、本発明の開示を不必要にあいまいにしないように、周知の特徴事項は詳細に説明しない。
ここで説明する種々の実施例では、種々の高さのバンプ下地金属(UBM)を有し、これにより、半導体チップ又はその他のマイクロ電子デバイスを回路基板に、又は二次元(2D)及び三次元(3D)のパッケージソリューションに用いるのに適した他の基板に接続するのに用い得る実用的な垂直方向の相互接続構造体が得られるようにした、はんだに基づく改善したウエハバンピング技術を本発明により提供する。
ここでは、垂直のピラー402上にはんだキャップ402を形成する信頼性のある製造可能な方法を開示する。一実施例では、めっき用モールドと後続のはんだペーストインシチュステンシルテンプレートとの双方として作用する二重目的のホトレジスト処理を用いることにより、製造の流れを著しく簡単化するとともに垂直の相互接続構造体の製造費を低減させる手段を提供する方法を開示する。他の実施例では、垂直のピラー構造体の頂面上に種々のはんだペーストを印刷し、これに続くリフロー処理を行ってはんだキャップ402を形成する方法を開示する。更に他の実施例では、はんだペーストを用いる方法であって、はんだペースト内に、はんだキャップ402の信頼性又は性能を高め得る種々の多元素合金及び微量元素を用いる方法をも含みうる方法を開示する。
1つ以上の実施例では、上述した方法を、種々の寸法及び形状の銅ピラー202及びその他の垂直の相互接続構造体に適用するものであり、これには、以下の金属、すなわち、銅及びその合金や、ニッケル及びその合金や、銀及びその合金を用いてピラー202を形成することを含むが、これに限定されるものではない。銅(Cu)ピラー202には、Ni、NiAu、NiPdAu、NiPd及びNiSn(これらに限定されない)を含むはんだウェッタブルキャップ仕上げ材(図示せず)を入れることもできる。
ある実施例では、上述した方法を用いて、入力/出力(I/O)接着パッド104に取り付けられた銅(Cu)ピラーバンプ構造体を構成するのに、又は再分配接着パッドから離して取り付けられた構造体を構成することができる。
ある実施例では、印刷はんだペースト300を用い、これにより、めっきはんだを用いる従来の方法よりも著しく広範囲のはんだ合金を有する最終製品を可能にする。1つ以上の実施例では、はんだペースト300を、以下の合金/金属、すなわち、SnPb合金、SnPbCu合金、SnAgCu合金、AuGe合金、AuSn合金、AuSi合金、SnSb合金、SnSbBi合金、PbSnSb合金、PbInSb合金、PbIn合金、PbSnAg合金、SnAg合金、PbSb合金、SnInAg合金、SnCu合金、PbAg合金、PbSbGa合金、SnAs合金、SnGe合金、ZnAl合金、CdAg合金、GeAl合金、AuIn合金、AgAuGe合金、AlSi合金、AlSiCu合金、AgCdZnCu合金及びAgCuZnSn合金のうちの1種類とする。しかし、他のはんだペースト材料を用いることもできる。
ある実施例では、この方法が、“インシチュ(in situ )”開口内に堆積された如何なるはんだ焼結合金、例えば、Ag焼結材料をも含むようにしうる。又、種々の実施例では、印刷はんだペースト300を採用し、これにより、はんだ中に、Bi、Ni、Sb、Fe、Al、In及びPbを含む(しかしこれらに限定されない)種々の微量元素が入っている最終製品に対する選択肢を可能にする。他の実施例では、はんだペースト300を単一金属のはんだとする。ここではドーピングをはんだ合金に対し説明するのと同様に、この単一金属のはんだにも、1種類以上の微量元素をドーピングすることができる。
上述した方法を用いて得られたピラー202及びはんだキャップ402は、5〜400ミクロン(μm)の範囲の全高及び10ミクロン(μm)程度に小さいピッチを有するようにしうる。
上述した方法を用いて製造したピラー202のx及びy方向の寸法限界(すなわち、垂直及び水平方向の寸法限界)としては、例えば、ピラー202が5ミクロン(μm)程度に小さい寸法限界及び2.0ミリメートル(mm)までの寸法限界を有するようにしうる。他の実施例では、上述した方法を用いて製造したピラー202が5.0ミリメートル(mm)までのx及びy方向の寸法限界を有するようにしうる。
1つ以上の実施例では、複数の反復処理で垂直の相互接続構造体上にはんだペーストを用いてはんだバンプを形成する本発明の方法は以下の通りである。
ステップ1:金属のシード層106を通常の方法(すなわち、スパッタリング、蒸着、無電解めっき等)により堆積して、電気化学めっき用の連続するシード層106を形成する。
一実施例では、表面安定化層103上に誘電体層105(例えば、ポリマー層)を予め形成しておく。この誘電体層105は、接着パッド104のそれぞれの部分を露出させる開口を形成するように予めパターン化しておき、シード層106の部分が各接着パッド104の頂面に接触しうるようにする。
ステップ2:ウエハ/基板102の全表面上にホトレジスト層108又はその他のレジスト型の材料を被着する。この処理は、乾燥フィルムのラミネーション法、又はスピンコーティング或いはスプレーコーティング法により達成しうる。
他の実施例では、ホトレジスト層108を、2つ以上のホトレジスト層により形成されたホトレジスト積層体とし、各ホトレジスト層が共通の寸法(すなわち、ホトレジスト積層体の開口寸法)である開口を有するようにしうる。一実施例では、これらの2つ以上のホトレジスト層を同じ処理工程で成長させる。他の実施例では、各ホトレジスト層を互いに独立的に成長させることができる。
ステップ3:この実施例では、ホトレジスト層108を一般に、設計に基づいた適切なホトマスクを介する紫外線(UV)露光により規定するが、開口の形成はUV露光/現像に限定されず、これにはレーザアブレーションと、ドライエッチングと、リフトオフ処理との何れか又は任意の組み合わせを含めることができるが、これらに限定されるものではない。
この方法の他の実施例では、ホトレジスト材料又はその他のレジスト型の材料より成る複数の層を被着して、様々な柱状構造体が容易に得られるようにするとともに、この柱状構造体の頂面上に印刷された様々なはんだ量が容易に得られるようにする様々な開口の高さ及び様々な開口寸法が同じレジスト積層体内に形成されるようにすることができる。
ステップ4:シード層106を被覆するホトレジスト層108を現像するか、さもなくばこのホトレジスト層に孔をあけ、ピラー202のめっき及びその後のはんだペースト印刷用の“インシチュ”開口110を形成する。
ステップ5:ホトレジスト層108に形成された開口110内のシード金属層106の表面上にピラー202を電気めっきする。
ステップ6:ホトレジストステンシルにおける“インシチュ”開口110の上側部分204内にはんだペースト300を印刷し、このはんだペースト300により銅ピラー202の頂面を被覆する。印刷したこのはんだペースト300の全体の深さは例えば、2〜200ミクロン(μm)の範囲としうる。或いはまた、金属ステンシルを用いて、“インシチュ”ホトレジスト材料内及びその上の双方でピラーバンプ構造体上にはんだを被着しうる領域を規定することもできる。
ステップ7:次に、適所に印刷はんだペースト300を有するウエハ又はその他の基板102をリフロー処理及び冷却処理し、銅ピラー202の頂部上にはんだキャップ402を形成する。
ステップ8:“インシチュ”ホトレジストステンシル材料を剥離させるか、さもなければ除去させる。
ステップ9:めっきされていないシード層106を選択的にエッチング除去し、はんだにより覆われた個々のピラー202を残す。
ステップ10:ウエハ又はその他の基板上に2回目のリフロー処理を行い、バンプの形状を最適化する。又、従来技術の一部として開発された銅(Cu)ピラー技術で可能な場合よりも更にバンプ対バンプ分解能を低減させるのにコイニング処理又は平坦化処理を用いることができる。
ステップ1〜10は全て、写真撮影、めっき及びはんだバンピング処理に対して当業者にとって既知の処理方法及びツールセットを用いて実行される。他の実施例では、上述した処理工程を、誘電体層105を使用することなしに実行することができる。特に、これらの他の実施例では、誘電体層105が決して形成されず、最終構造体において存在しないようにする。シード層106は(例えば、堆積により)表面安定化層103及び接着パッド104上に直接形成する。
従来、ピラー上にはんだを設けた相互接続構造体を形成するためには、めっき処理が他の人々により用いられていたことに注意すべきである。APS、Casio及びRFMD社では、装置上の相互接続パッド上に銅ピラーをめっきし、続いて、装置と接合基板との間の相互接続材料に対して用いられるピラーの頂面に、電気めっきされたはんだのキャップを被着している。APS社の先行特許には、米国特許第6,732,913号、米国特許第6,681,982号及び米国特許第6,592,019号の特許が含まれている。又、フリップチップインターナショナル(FCI)社では従来、“インシチュ”ホトレジスト材料を用いて、(これと同じホトレジスト層によって規定されない)予め形成しといたUBM上にはんだ開口を規定している。しかし、これらの従来の方法の何れも、説明した通りはんだペーストをめっき及び印刷するための二重目的のホトレジスト処理を用いている。
本発明のある実施例は、高出力分野に対する相互接続の解決法を提供したり、フリップチップ分野における、特にアンダーフィルのための“キープアウト”領域を回避し、部品密度を最大にするのが望ましいシステム・イン・パッケージ分野における一貫したスタンドオフに対するコラップス制御法を提供するのに用いるのが望ましい。
上述した本発明の他の種々の実施例には、以下の方法及び構造を含めることができる(以下の順番数は容易に参照しうるようにするだけのものである)。
1.銅ピラーを形成する、特にドーピングされたはんだペーストを有する銅ピラーを“トッピングオフ”する如何なる従来の又は新規な方法に対し、はんだ合金内に種々の微量元素の何れかがドーピングされたはんだペーストを用いる方法。
2.銅ピラーを形成する、特にはんだペーストを有する銅ピラーを“トッピングオフ”してはんだキャップを形成する如何なる従来の又は新規な方法に対し種々の合金の何れかのはんだペーストを用いる方法。
3.レジスト材料がめっき用モールド及びその後のはんだペーストステンシルテンプレートとの双方として作用する二重目的の“インシチュ”ホトレジスト処理又はその他の種類のレジスト材料を用いることに基づいてはんだキャップ付の垂直ピラー構造体を形成する方法。
4.垂直ピラー構造体の頂面上にはんだペースト合金を印刷し、これに続くリフロー処理を行なうことに基づいてはんだキャップ付の垂直ピラー構造体を形成する方法。はんだペーストは、ナノ粒子を含む如何なる寸法範囲のはんだ粒子からも構成することができる。
5.はんだペースト合金を印刷することに基づいてはんだキャップ付の垂直ピラー構造体を形成するこの方法を、一実施例では、従来技術で述べためっき方法によっては容易に達成されない多元素はんだペースト合金を使用することにより更に向上させる。これらの多元素はんだペースト合金は、垂直相互接続用のはんだ及び金属間化合物の双方又は何れか一方の信頼性又は性能を高めることができる。
6.はんだ合金内に(Bi、Ni、Sb、Fe、Al、In及びPbのような、しかしこれらに限定されない)種々の微量元素をドーピングして成るはんだペースト合金を垂直ピラー構造体の頂面上に印刷し、これに続くリフロー処理を行なうことに基づいてはんだキャップ付の垂直ピラー構造体を形成する方法。これらのドーピングされたはんだペースト合金は、垂直相互接続用のはんだ及び金属間化合物の双方又は何れか一方の信頼性又は性能を高めることができる。
7.二重目的のホトレジスト処理と、ピラー構造体上へのはんだペーストの印刷とを用いる方法は、はんだめっきに比べて、はんだ印刷に必要とするプロセス制御を減少させるとともに処理時間を早くする為に、従来のはんだめっき法よりも製造費を廉価にする。
8.二重目的のレジスト法の他の実施例が複数のレジスト材料の層を有するようにし、これにより、レジスト開口をあける一回以上の露光処理又はその他の方法を適用して同じレジスト積層体内に様々な開口の高さ及び様々な開口寸法を形成し、これにより様々な柱状構造体が容易に得られるようにするとともに、この柱状構造体の頂面上に印刷された様々なはんだ量が容易に得られるようにすることができる。
9.これらの種々のはんだキャップ付柱状構造体は、可変の高さであるZ軸方向の相互接続が必要となる3Dウエハレベルパッケージング分野に導入することができる。
一実施例では、方法が第1及び第2の垂直ピラーを形成するステップであって、これらの垂直ピラーの各々がそれぞれの接着パッドを被覆し、それぞれの接着パッドが、半導体基板を被覆し、第1及び第2の垂直ピラーの各々が、互いに異なる高さを有するようにするステップと、第1の開口及び第2の開口を有する少なくとも1つのホトレジスト層を形成するステップと、第1及び第2の垂直ピラーの各々の頂面上にはんだを被着し、第1の垂直ピラー上のはんだは第1の開口により画成され、第2の垂直ピラー上のはんだは第2の開口により画成されるようにするステップとを有するようにする。
10.柱状ピラー構造体の頂面上にはんだペーストを印刷する方法は、“インシチュ”ホトレジストにおける開口内に用い得るばかりではなく、金属ステンシルを用いて達成し、ペーストを“インシチュ”ホトレジスト材料内及びこの材料上のピラーバンプ構造体上に被着してはんだ量を被着する汎用性を一層高めるようにすることができる。
11.ピラーバンプを製造するために二重目的のレジストを使用する方法は、従来技術で述べた従来のめっき法に比べて、全体のピラー/はんだの高さの均一性を改善するものである。構造体の銅(Cu)ピラー部分のめっき後には、基板に亘る厚さの均一性に差がある為、印刷はんだは“インシチュ”開口の残余の厚さを充填する、従って、厚さの変化を調節することにより高さの如何なる変化をも平坦化するのに役立つ。従来のピラーバンプめっき法の場合、ピラーのめっきしたはんだ部分が、ウエハ又はその他の基板に亘る高さの均一性において何らかの相違をもたらすおそれがある。
12.最終的なはんだペーストの充填のためにホトレジスト材料又はその他のレジスト型の材料の1つ以上の層を被着する処理工程は、垂直ピラーの形成後に行うこともできる。
13.最終的なはんだペーストの充填のためにホトレジスト材料又はその他のレジスト型の材料の1つ以上の層を被着する処理工程、又ははんだペーストを被着するための機械的なステンシルの使用は、垂直構造体の形成及びその後の銅(Cu)ピラー構造体の機械的又は化学的除去後に行うことができる。このようにすることにより、はんだペーストを堆積する前に銅(Cu)ピラー又はその他の金属柱状構造体を平坦化する。
14.これらの方法は、種々の寸法及び形状の銅ピラーバンプのような構造体や、その他の垂直相互接続機構であって、銅及びその合金、金及びその合金、ニッケル及びその合金、銀及びその合金の金属(これらの金属に限定されない)を含む当該機構に適用する。銅(Cu)ピラーには、Ni、NiAu、NiPdAu、NiPd、Pd及びNiSn(これらに限定されない)を含むはんだウェッタブルキャップ仕上げ材を入れることもできる。
15.これらの方法によれば、円形、方形、八角形等を含む種々の形状(これらの形状に限定されない)である垂直の相互接続体を構成しうる。
更に他の実施例では、第1及び第2の垂直ピラーであって、これらの各々がそれぞれの接着パッドを被覆し、それぞれの接着パッドは半導体基板上に位置しているようにしたこれら第1及び第2の垂直ピラーを形成するステップと、第1の開口及び第2の開口を有する少なくとも1つのホトレジスト層を形成するステップと、前記第1及び第2の垂直ピラーの各々の頂面上にはんだを被着し、第1の垂直ピラー上のはんだは前記第1の開口により画成され、第2の垂直ピラー上のはんだは前記第2の開口により画成されるようにしたステップと、リフロー処理を実行して、前記第1の垂直ピラー上に第1のはんだキャップを形成するとともに、前記第2の垂直ピラー上に第2のはんだキャップを形成し、前記第1の垂直ピラーと前記第1のはんだキャップとの合計の高さが前記第2の垂直ピラーと前記第2のはんだキャップとの合計の高さよりも高くなるようにするステップとを具える方法を提供する。一実施例では、前記少なくとも1つのホトレジスト層を単一層のホトレジストとするか、又は複数層のホトレジスト積層体とする。一実施例では、前記第1の垂直ピラーと前記第1のはんだキャップとの合計の高さが前記第2の垂直ピラーと前記第2のはんだキャップとの合計の高さよりも少なくとも約5ミクロンだけ高くなるようにする。
幾つかの実施例及び方法を上述したが、当業者にとっては上述したところから明らかなように、本発明の真の精神及び範囲から逸脱することなく、上述した実施例を変形及び変更することができる。
Claims (32)
- 半導体基板上に位置している接着パッド上に位置させた垂直ピラーを形成するステップと、
少なくとも1つのホトレジスト層により画成されたはんだペーストを前記垂直ピラーの頂面上に被着するステップと
を具える方法。 - 請求項1に記載の方法において、前記垂直ピラーを前記少なくとも1つのホトレジスト層により画成する方法。
- 請求項1に記載の方法において、前記少なくとも1つのホトレジスト層に、前記はんだペーストを画成する第1の開口をあけ、
追加のホトレジスト層にあけた第2の開口により前記垂直ピラーを画成し、
前記少なくとも1つのホトレジスト層は前記追加のホトレジスト層上に位置するように形成し、
前記第1の開口の横方向寸法は前記第2の開口よりも大きくする
方法。 - 請求項1に記載の方法において、前記はんだペーストをはんだ合金又は単一金属のはんだとし、前記はんだペーストに少なくとも1種類の微量元素をドーピングする方法。
- 請求項4に記載の方法において、前記少なくとも1種類の微量元素を、Bi、Ni、Sb、Fe、Al、In及びPbのうちの少なくとも1種類とする方法。
- 請求項1に記載の方法において、前記はんだペーストを多元素のはんだ合金とする方法。
- 請求項1に記載の方法において、この方法が更に、はんだペーストを被着する前記ステップに続いて、リフロー処理を行って前記垂直ピラーの頂面上にはんだキャップを形成する方法。
- 請求項1に記載の方法において、前記垂直ピラーを複数の垂直ピラーのうちの1つとし、この方法が更に、はんだペーストを被着する前記ステップに続いてこれら複数の垂直ピラーを平坦化するステップを具えている方法。
- 請求項1に記載の方法において、前記垂直ピラーを複数の垂直ピラーのうちの1つとし、これら複数の垂直ピラーの各々を可変の高さであるZ軸方向の相互接続体に相当するようにする方法。
- 請求項1に記載の方法において、前記垂直ピラーを銅とする方法。
- 請求項10に記載の方法において、前記垂直ピラーがNi、NiAu、NiPdAu、NiPd、Pd及びNiSnのうちの1種類より成るはんだウェッタブルキャップ仕上げ材を有するようにする方法。
- 請求項1に記載の方法において、前記垂直ピラーを銅、銅合金、金、金合金、ニッケル、ニッケル合金、銀及び銀合金のうちの1種類とする方法。
- 請求項1に記載の方法において、前記垂直ピラーが、円形、方形及び八角形から選択した1種類の形状を有するようにする方法。
- 請求項1に記載の方法において、前記はんだペーストをはんだ合金又は単一金属のはんだとする方法。
- 請求項1に記載の方法において、この方法が更に、垂直ピラーを形成する前記ステップの前に前記接着パッド上に位置するシード層を形成するステップを具えている方法。
- 請求項15に記載の方法において、この方法が更に、
垂直ピラーを形成する前記ステップの前に、少なくとも1つのホトレジスト層を前記シード層上に位置するように形成するステップ
を具える方法。 - 請求項1に記載の方法において、この方法が更に、
垂直ピラーを形成する前記ステップの前に、誘電体層を前記接着パッド上に位置するように形成するとともに、この誘電体層に開口をあけて前記接着パッドの一部を露出させるステップと、
この誘電体層の上に位置するシード層を形成するステップと
を具える方法。 - 請求項17に記載の方法において、前記誘電体層をポリマ層とする方法。
- 請求項1に記載の方法において、この方法が更に、
金属ステンシルを用いて領域を画成するステップを具え、この領域内で前記少なくとも1つのホトレジスト層の上側で前記垂直ピラーの上に前記はんだペーストの一部を被着する
方法。 - 請求項1に記載の方法において、前記少なくとも1つのホトレジスト層を、単一のホトレジスト層と、複数のホトレジスト層であって、各ホトレジスト層が互いに共通の寸法の開口を有するこれら複数のホトレジスト層との一方とする方法。
- 請求項1に記載の方法において、はんだペーストを被着する前記ステップが、はんだペーストを印刷する処理を有するようにする方法。
- 請求項1に記載の方法において、前記はんだペーストをSnとする方法。
- 請求項2に記載の方法において、この方法が更に、
はんだペーストを被着する前記ステップに続いて、リフロー処理を行って前記垂直ピラーの頂面上にはんだキャップを形成するステップ
を具えている方法。 - 半導体基板上に位置している接着パッド上に位置させた垂直銅ピラーを形成するステップと、
少なくとも1つのホトレジスト層により画成されているとともに、少なくとも1種類の微量元素がドーピングされているはんだペーストを前記垂直銅ピラーの頂面上に被着するステップと、
リフロー処理を行って前記はんだペーストからはんだキャップを形成するステップと
を具える方法。 - 請求項24に記載の方法において、前記垂直銅ピラーがNi、NiAu、NiPdAu、NiPd、Pd及びNiSnのうちの1種類より成るはんだウェッタブルキャップ仕上げ材を有するようにする方法。
- 請求項24に記載の方法において、この方法が更に、
垂直銅ピラーを形成する前記ステップの前に、前記接着パッドの上に位置するシード層を形成するステップと、
垂直銅ピラーを形成する前記ステップの前に、このシード層の上に位置する前記少なくとも1つのホトレジスト層を形成するステップと
を具える方法。 - 請求項24に記載の方法において、前記はんだペーストをSnとする方法。
- 請求項24に記載の方法において、この方法が更に、
垂直銅ピラーを形成する前記ステップの前に、前記接着パッドの上に位置する誘電体層を形成するとともに、この誘電体層に開口をあけてこの接着パッドの一部を露出させるステップと、
この誘電体層の上に位置するシード層を形成するステップと
を具える方法。 - 請求項24に記載の方法において、前記半導体基板上に表面安定化層を位置させ、この表面安定化層に開口をあけて前記接着パッドを露出させ、前記方法は更に、
垂直銅ピラーを形成する前記ステップの前に、前記表面安定化層及び前記接着パッド上に直接シード層を堆積するステップ
を具える方法。 - 第1及び第2の垂直ピラーであって、各垂直ピラーが、半導体基板の上に位置するそれぞれの接着パッド上に位置するこれら第1及び第2の垂直ピラーを形成するステップと、
第1の開口及び第2の開口を有する少なくとも1つのホトレジスト層を形成するステップと、
前記第1及び第2の垂直ピラーの各々の頂面上にはんだを被着し、第1の垂直ピラー上のはんだは前記第1の開口により画成し、第2の垂直ピラー上のはんだは前記第2の開口により画成するステップと、
リフロー処理を行って、前記第1の垂直ピラー上に第1のはんだキャップを形成するとともに、前記第2の垂直ピラー上に第2のはんだキャップを形成し、前記第1の垂直ピラーと前記第1のはんだキャップとの合計の高さが前記第2の垂直ピラーと前記第2のはんだキャップとの合計の高さよりも高くなるようにするステップと
を具える方法。 - 請求項30に記載の方法において、前記少なくとも1つのホトレジスト層を単一層のホトレジストとするか、又は複数層のホトレジスト積層体とする方法。
- 請求項30に記載の方法において、前記第1の垂直ピラーと前記第1のはんだキャップとの合計の高さが前記第2の垂直ピラーと前記第2のはんだキャップとの合計の高さよりも少なくとも約5ミクロンだけ高くなるようにする方法。
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- 2010-06-29 WO PCT/US2010/040410 patent/WO2011002778A2/en active Application Filing
- 2010-06-29 EP EP10794642.8A patent/EP2449582A4/en not_active Withdrawn
- 2010-06-29 JP JP2012518576A patent/JP2012532459A/ja active Pending
- 2010-06-29 KR KR1020127002988A patent/KR20120045005A/ko not_active Application Discontinuation
- 2010-06-30 US US12/828,003 patent/US20110003470A1/en not_active Abandoned
- 2010-07-01 TW TW099121741A patent/TW201108342A/zh unknown
Cited By (8)
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US9299606B2 (en) | 2013-11-29 | 2016-03-29 | International Business Machines Corporation | Fabricating pillar solder bump |
US9508594B2 (en) | 2013-11-29 | 2016-11-29 | International Business Machines Corporation | Fabricating pillar solder bump |
KR20170033393A (ko) | 2014-08-29 | 2017-03-24 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 접속의 Cu 필러용 원기둥상 형성물 |
KR20180130009A (ko) | 2014-08-29 | 2018-12-05 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 접속의 Cu 필러용 원기둥상 형성물 |
KR20200121923A (ko) | 2014-08-29 | 2020-10-26 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 접속의 Cu 필러용 원기둥상 형성물 |
US11101234B2 (en) | 2014-08-29 | 2021-08-24 | Nippon Micrometal Corporation | Cu pillar cylindrical preform for semiconductor connection |
JP2016115846A (ja) * | 2014-12-16 | 2016-06-23 | 三菱マテリアル株式会社 | ピラー形成用ペースト、ピラーの製造方法、バンプ構造体の製造方法、ピラー、及びバンプ構造体 |
KR20210035187A (ko) | 2018-07-26 | 2021-03-31 | 디아이씨 가부시끼가이샤 | 도전성 페이스트를 이용한 도전성 필러의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP2449582A4 (en) | 2013-06-12 |
EP2449582A2 (en) | 2012-05-09 |
WO2011002778A3 (en) | 2011-03-31 |
KR20120045005A (ko) | 2012-05-08 |
WO2011002778A2 (en) | 2011-01-06 |
US20110003470A1 (en) | 2011-01-06 |
TW201108342A (en) | 2011-03-01 |
CN102484081A (zh) | 2012-05-30 |
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