JP2012244093A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2012244093A JP2012244093A JP2011115592A JP2011115592A JP2012244093A JP 2012244093 A JP2012244093 A JP 2012244093A JP 2011115592 A JP2011115592 A JP 2011115592A JP 2011115592 A JP2011115592 A JP 2011115592A JP 2012244093 A JP2012244093 A JP 2012244093A
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- ball
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- semiconductor device
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- ball forming
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
【解決手段】ボール形成ユニットBFUに酸化防止ガスを排出するガス排出部GOPを設け、このガス排出部GOPによる排出経路を、酸化防止ガスがボール形成部BFPに導入される方向とは異なる方向に設ける。これにより、酸化防止ガスを排出する領域を増加させることができるので、ボール形成部BFPの一側面側から供給されるガス流が、対向する他方の側面でガス流が反射して乱流を形成してしまうことを抑制できる。
【選択図】図29
Description
<半導体装置(BGAパッケージ)の構成例>
半導体装置のパッケージ構造には、例えば、BGA(Ball Grid Array)パッケージやQFP(Quad Flat Package)パッケージなどのように様々な種類がある。本発明の技術的思想は、これらのパッケージに適用可能であり、以下に、BGAパッケージからなる半導体装置の構成例と、QFPパッケージからなる半導体装置の構成例について説明する。
BGAパッケージからなる半導体装置SA1は、上記のように構成されており、以下に、その製造方法について簡単に説明する。図5は、BGAパッケージからなる半導体装置SA1を製造する工程の流れを示すフローチャートである。
まず、QFPパッケージからなる半導体装置の構成について図面を参照しながら説明する。図6は、QFPパッケージからなる半導体装置SA2を上面から見た平面図である。図6に示すように、半導体装置SA2は矩形形状をしており、半導体装置SA2の上面は樹脂(封止体)RMで覆われている。そして、樹脂RMの外形を規定する四辺から外側に向ってアウターリードOLが突き出ている。
QFPパッケージからなる半導体装置SA2は上記のように構成されており、以下に、その製造方法について簡単に説明する。図8は、半導体チップに集積回路を形成した後、QFPパッケージからなる半導体装置を製造する工程の流れを示すフローチャートである。まず、リードフレームに形成されているチップ搭載部に半導体チップを搭載した後(S201のダイボンディング工程)、半導体チップに形成されているパッドとインナーリードとをワイヤで接続する(S202のワイヤボンディング工程)。その後、チップ搭載部、半導体チップ、ワイヤ、インナーリードを樹脂で封止する(S203のモールド工程)。そして、リードフレームに形成されているダムを切断した後(S204のダム切断工程)、樹脂から露出しているアウターリードの表面にめっき膜を形成する(S205のめっき工程)。続いて、樹脂の表面にマークを形成した後(S206のマークキング工程)、樹脂から突き出ているアウターリードを成形する(S207のリード成形工程)。このようにして半導体装置SA2を形成した後、電気的特性検査が実施され(S208のテスティング工程)、良品と判断された半導体装置SA2が製品として出荷される。
上述したように、半導体装置のパッケージ構造例として、BGAパッケージからなる半導体装置SA1と、QFPパッケージからなる半導体装置SA2を挙げたが、本発明の技術的思想は、両方に共通するワイヤボンディング工程(図5のS102、図8のS202)に関するものである。そこで、以下では、ワイヤボンディング工程の詳細について、リードフレームを使用するQFPを例に挙げて説明する。図9(a)〜図14(a)は、ワイヤボンディング工程において、キャピラリを動作させる様子を示す部分断面図であり、図9(b)〜図14(b)は、上述したキャピラリを動作させる様子を上方から見た平面図である。図9(a)および図9(b)に示すように、ヒートプレートHP上にリードフレームを構成するリードLDとチップ搭載部TABが配置されており、チップ搭載部TAB上に半導体チップCHPが搭載されている。この半導体チップCHPの表面(上面)には、パッドPDが形成されている。ヒートプレートHPは熱源として機能し、ヒートプレートHP上に配置されているリードLDが加熱されるとともに、チップ搭載部TABを介してヒートプレートHP上に配置されている半導体チップCHPも加熱される。
上述したワイヤボンディング工程では、図15や図16に示すように、ガス導入部GIPから酸化防止ガスをボール形成部BFPに導入しながら、キャピラリCAPの先端部に初期ボールIBLを形成しているが、これは、以下に示す理由による。
以下では、初期ボールIBLの形状不良の具体例を挙げて、パッドPDへダメージを与えることについて詳細に説明する。まず、初期ボールIBLの形状が正常である場合について説明する。図17および図18は、正常な形状の初期ボールIBLをパッドPD上にボンディング(ファーストボンディング)する工程を示す断面図である。図17に示すように、半導体チップに形成されたパッドPDは、パッシベーション膜(表面保護膜)PASに形成された開口部から露出した構成をしている。そして、この露出しているパッドPD上にキャピラリCAPが配置されている。このキャピラリCAPの先端部には初期ボールIBLが形成されている。このとき、図17に示す初期ボールIBLは、真球で、ボール径が適正であるとともに、偏芯がなく、表面が酸化されていない正常状態にある。このような初期ボールIBLがキャピラリCAPの先端部に形成されており、このキャピラリCAPを下降させることにより、初期ボールIBLをパッドPD上に着地させる。そして、図18に示すように、パッドPD上に着地した初期ボールIBLは、キャピラリCAPからの荷重および超音波振動と、半導体チップの下に配置されているヒートプレートからの熱エネルギーによって、変形し、圧着ボールPBLとなる。この圧着ボールPBLは、台座部PEと、台座部PE上に形成されるコーン部CNと、コーン部CN上に形成されるホール挿入部HIから構成される。このとき、図17に示す初期ボールIBLが正常状態にあるため、上述した荷重、超音波振動および熱負荷によって適正な形状の圧着ボールPBLが形成される。このことから、圧着ボールPBLの下層に存在するパッドPDに想定外のダメージが加わることなく、圧着ボールPBLをパッドPD上に形成することができる。
本発明者が検討したところ、上述した初期ボールにおける異常形状の発生は、ボール形成ユニットにおいて、ガス導入部からボール形成部に流入される酸化防止ガスの流れに影響を受けやすいことが明らかとなった。以下では、本発明者が検討した検討例1および検討例2を例に挙げて、初期ボールの異常形状が頻発するメカニズムについて説明する。
図29は、本実施の形態1におけるボール形成ユニットBFUの構成を示す図である。特に、図29(a)は、本実施の形態1におけるボール形成ユニットBFUの一部を示す平面図であり、図29(b)は、図29(a)のA−A線で切断した断面図である。また、図29(c)は、図29(a)のB−B線で切断した断面図である。
前記実施の形態1では、ガス導入部における酸化防止ガスの導入方向(供給方向)と、ガス排出部における酸化防止ガスの排出方向が90°異なっている例について説明したが、本変形例1では、上述した導入方向と排出方向が90°±45°異なっている例について説明する。
ガス排出部GOPの断面積は、酸化防止ガスの排出を妨げない大きさであることが望ましく、具体的に、ガス排出部GOPがボール形成ユニットBFUの厚さ方向に貫通しているときの断面積を100%(最大断面積)とする場合に、この断面積に対して、50%〜100%の断面積を有するようにガス排出部GOPを設けることが望ましい。
ガス排出部GOPの断面形状は、ボール形成ユニットの厚さ方向に貫通して形成される開口形状の他に、変形例2で説明した断面積を有するものであれば、矩形形状や丸型形状などであってもよい。
本実施の形態2では、キャピラリの先端部に対して、ガス導入部と反対側にガス溜まり部を設けている例について説明する。
なお、上述した実施の形態では、銅ワイヤを使用したワイヤボンディング工程を例に挙げて説明したが、本願発明における技術的思想は、銅からなるスタッドバンプ電極を形成する工程にも幅広く適用することができる。なぜなら、スタッドバンプ電極も、キャピラリによって、先端部に形成された初期ボールをパッド上に着地させた後、圧縮荷重および超音波振動を印加することにより初期ボールを変形させて圧着ボールを形成し、この圧着ボールの先端部で銅ワイヤを切断することによりスタッドバンプ電極を形成するからである。つまり、銅ワイヤによるワイヤボンディング工程とスタッドバンプ電極形成工程のいずれにおいても、圧縮荷重および超音波振動を印加して圧着ボールを形成する点は共通するため、銅からなるスタッドバンプ電極を形成する工程においても、パッドへのダメージの問題が顕在化すると考えられる。したがって、スタッドバンプ電極を形成する工程においても、本発明の技術的思想を適用することにより、パッドへのダメージを効果的に防止することができる。
BFP ボール形成部
BFU ボール形成ユニット
CAP キャピラリ
CHP 半導体チップ
CMP クランパ
CN コーン部
CN1 コーン部
CN2 コーン部
CN3 コーン部
GCP ガス溜まり部
GIP ガス導入部
GOP ガス排出部
GOP1 ガス排出部
GOP2 ガス排出部
GOP3 ガス排出部
GOP4 ガス排出部
GOP5 ガス排出部
HI ホール挿入部
HI1 ホール挿入部
HI2 ホール挿入部
HI3 ホール挿入部
HL 噴出孔
HP ヒートプレート
IBL 初期ボール
IBL1 初期ボール
IBL2 初期ボール
IBL3 初期ボール
IL インナーリード
LD リード
LD1 ランド端子
LD2 端子
MR 樹脂
OL アウターリード
PAS パッシベーション膜
PBL 圧着ボール
PBL1 圧着ボール
PBL2 圧着ボール
PBL3 圧着ボール
PD パッド
PE 台座部
PE1 台座部
PE2 台座部
PE3 台座部
PF めっき膜
RM 樹脂
S 半田
SA1 半導体装置
SA2 半導体装置
SB 半田ボール
SBMP スタッドバンプ電極
STCH ステッチ部(クレセント部)
TAB チップ搭載部
TCH トーチ電極
TE 端子
W ワイヤ
WB 配線基板
Claims (18)
- (a)半導体チップが搭載された配線板を準備する工程と、
(b)ボール形成ユニット内のボール形成部にキャピラリの先端部を配置する工程と、
(c)前記ボール形成部の内部を酸化防止ガス雰囲気とし、前記ボール形成部内でトーチ電極と、前記キャピラリの先端部から出ている導電性ワイヤとの間で放電させることにより、前記導電性ワイヤの先端部に初期ボールを形成する工程と、
(d)前記初期ボールを前記半導体チップ上のパッドにボンディングすることにより、前記導電性ワイヤと前記半導体チップとを電気的に接続する工程と、を有し、
前記ボール形成ユニットは、前記ボール形成部、前記ボール形成部に酸化防止ガスを導入するガス導入部、および、前記ボール形成部から前記酸化防止ガスを排出するガス排出部、を有し、
前記ガス排出部は、前記酸化防止ガスが前記ボール形成部に導入される方向とは異なる方向に設けられていることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記ガス排出部は、前記酸化防止ガスが導入される方向に対して、90°±45°の範囲内に設けられていることを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
前記ガス排出部は、前記酸化防止ガスが導入される方向に対して、90°の位置に設けられていることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記ガス排出部は、前記ボール形成ユニットの厚さ方向に貫通していることを特徴とする半導体装置の製造方法。 - 請求項4に記載の半導体装置の製造方法であって、
前記ガス排出部の幅は、前記キャピラリの幅以上であることを特徴とする半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法であって、
前記ガス排出部の幅は、前記ボール形成部の幅以下であることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記ボール形成ユニットには、前記ボール形成部に対して前記ガス導入部と対向する位置にガス溜まり部が設けられていることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記導電性ワイヤは、金ワイヤよりも酸化しやすい金属ワイヤであることを特徴とする半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法であって、
前記導電性ワイヤは、銅ワイヤであることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記酸化防止ガスは、不活性ガスであることを特徴とする半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法であって、
前記不活性ガスは、窒素ガス、あるいは、アルゴンガスを含むことを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記酸化防止ガスは、不活性ガスと還元性ガスとを含むフォーミングガスであることを特徴とする半導体装置の製造方法。 - 請求項12に記載の半導体装置の製造方法であって、
前記フォーミングガスは、窒素ガスと水素ガスとを含むことを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記ボール形成ユニットは、絶縁樹脂から構成されていることを特徴とする半導体装置の製造方法。 - 請求項14に記載の半導体装置の製造方法であって、
前記絶縁樹脂は、ポリアミドイミド樹脂であることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記(d)工程の後、
(e)前記導電性ワイヤを前記配線板上の端子にボンディングすることにより、前記導電性ワイヤと前記配線板とを電気的に接続する工程と、
(f)前記半導体チップ、前記導電性ワイヤ、および前記配線板の一部を封止体により封止する工程と、をさらに有することを特徴とする半導体装置の製造方法。 - 請求項16に記載の半導体装置の製造方法であって、
前記配線板は配線基板であって、前記配線板上の前記端子はランド端子であることを特徴とする半導体装置の製造方法。 - 請求項16に記載の半導体装置の製造方法であって、
前記配線板はリードフレームであって、前記配線板上の前記端子はインナーリードであることを特徴とする半導体装置の製造方法。
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JPH0428136B2 (ja) * | 1984-05-18 | 1992-05-13 | Mitsubishi Electric Corp | |
JPH0254947A (ja) * | 1988-08-19 | 1990-02-23 | Hitachi Ltd | 半導体装置の組立方法およびそれに用いる装置 |
US20080099531A1 (en) * | 2006-10-30 | 2008-05-01 | Yam Mo Wong | Apparatus for delivering shielding gas during wire bonding |
JP2011040635A (ja) * | 2009-08-13 | 2011-02-24 | Kaijo Corp | ワイヤボンディング装置 |
US20110049219A1 (en) * | 2009-09-03 | 2011-03-03 | Advanced Semiconductor Engineering, Inc. | Wire-bonding machine with cover-gas supply device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101813831B1 (ko) | 2014-08-06 | 2017-12-29 | 가부시끼가이샤가이죠 | 본딩 방법 및 본딩 장치 |
Also Published As
Publication number | Publication date |
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US20120302009A1 (en) | 2012-11-29 |
US8586416B2 (en) | 2013-11-19 |
TW201301417A (zh) | 2013-01-01 |
CN102800602A (zh) | 2012-11-28 |
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