JP2012235157A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2012235157A JP2012235157A JP2012163353A JP2012163353A JP2012235157A JP 2012235157 A JP2012235157 A JP 2012235157A JP 2012163353 A JP2012163353 A JP 2012163353A JP 2012163353 A JP2012163353 A JP 2012163353A JP 2012235157 A JP2012235157 A JP 2012235157A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 230000009103 reabsorption Effects 0.000 abstract description 8
- 230000005284 excitation Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
- F21Y2105/12—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
【解決手段】基板と、基板上に実装され波長250nm乃至500nmの光を発する第1の発光素子と、第1の発光素子上に形成され緑色蛍光体を含有するドーム状の第1の蛍光体層とを有する複数の第1の発光部と、基板上に実装され波長250nm乃至500nmの光を発する第2の発光素子と、第2の発光素子上に形成され赤色蛍光体を含有するドーム状の第2の蛍光体層とを有する複数の第2の発光部と、基板上の第1の発光素子と第2の発光素子との間に実装され波長250nm乃至500nmの光を発する第3の発光素子と、第3の発光素子上に形成され緑色蛍光体または赤色蛍光体のいずれも含有しないドーム状の樹脂層とを有する第3の発光部と、を備え、第1の蛍光体層および第2の蛍光体層がそれぞれの間に気体を挟んで非接触に分離されることを特徴とする発光装置。
【選択図】図1
Description
(M1−x1Eux1)3−y1Si13−z1Al3+z1O2+uN21−w (1)
(上記一般式(1)中、MはIA族元素、IIA族元素、IIIA族元素、Alを除くIIIB族元素、希土類元素、およびIVB族元素から選択される元素である。x1、y1、z1、u、wは、次の関係を満たす。
0<x1<1、
−0.1<y1<0.3、
−3<z1≦1、
−3<u−w≦1.5)
(M’1−x2Eux2)a1Sib1AlOc1Nd1 (2)
(上記一般式(2)中、M’はIA族元素、IIA族元素、IIIA族元素、Alを除くIIIB族元素、希土類元素、およびIVB族元素から選択される元素である。x2、a1、b1、c1、d1は、次の関係を満たす。
0<x2<1、
0.55<a1<0.95
2.0<b1<3.9、
0<c1<0.6、
4<d1<5.7)
本実施の形態の発光装置は、基板と、基板上に実装され波長250nm乃至500nmの光を発する第1の発光素子と、第1の発光素子上に形成され緑色蛍光体を含有する第1の蛍光体層とを有する複数の第1の発光部と、基板上に実装され波長250nm乃至500nmの光を発する第2の発光素子と、第2の発光素子上に形成され赤色蛍光体を含有する第2の蛍光体層とを有する複数の第2の発光部と、基板上の第1の発光素子と第2の発光素子との間に実装され波長250nm乃至500nmの光を発する第3の発光素子と、第3の発光素子上に形成され緑色蛍光体または赤色蛍光体のいずれも含有しない樹脂層とを有する第3の発光部と、を備え、第1の蛍光体層および第2の蛍光体層がそれぞれの間に気体を挟んで非接触に分離される。
(上記一般式(1)中、MはIA族元素、IIA族元素、IIIA族元素、Alを除くIIIB族元素、希土類元素、およびIVB族元素から選択される元素である。x1、y1、z1、u、wは、次の関係を満たす。
0<x1<1、
−0.1<y1<0.3、
−3<z1≦1、
−3<u−w≦1.5)
(上記一般式(2)中、M’はIA族元素、IIA族元素、IIIA族元素、Alを除くIIIB族元素、希土類元素、およびIVB族元素から選択される元素である。x2、a1、b1、c1、d1は、次の関係を満たす。
0<x2<1、
0.55<a1<0.95
2.0<b1<3.9、
0<c1<0.6、
4<d1<5.7)
本実施の形態の発光装置は、第3の発光素子が、すべての第1の発光素子と第2の発光素子との間に実装されること、すなわち、第3の発光部が、すべての第1の発光部と第2の発光部との間に配置されること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記載を省略する。
本実施の形態の発光装置は、第2の発光部が第3の発光部に取り囲まれ、第3の発光部が第1の発光部で取り囲まれる配置であること以外は、第2の実施の形態と同様である。したがって、第2の実施の形態と重複する内容については、記載を省略する。
12 第1の発光部
12a 第1の発光素子
12b 第1の蛍光体層
14 第2の発光部
14a 第2の発光素子
14b 第2の蛍光体層
16 第3の発光部
16a 第3の発光素子
16b 樹脂層層
20 ワイヤ
Claims (4)
- 基板と、
前記基板上に実装され波長250nm乃至500nmの光を発する第1の発光素子と、前記第1の発光素子上に形成され緑色蛍光体を含有するドーム状の第1の蛍光体層とを有する複数の第1の発光部と、
前記基板上に実装され波長250nm乃至500nmの光を発する第2の発光素子と、前記第2の発光素子上に形成され赤色蛍光体を含有するドーム状の第2の蛍光体層とを有する複数の第2の発光部と、
前記基板上の前記第1の発光素子と前記第2の発光素子とのすべての間に実装され波長250nm乃至500nmの光を発する第3の発光素子と、前記第3の発光素子上に形成され前記緑色蛍光体または前記赤色蛍光体のいずれも含有しないドーム状の樹脂層とを有するそれぞれが同一の複数の第3の発光部と、を備え、
前記第1の蛍光体層および第2の蛍光体層がそれぞれの間に気体を挟んで非接触に分離され、
前記緑色蛍光体は下記一般式(1)で表わされる組成を有し、前記赤色蛍光体は下記一般式(2)で表わされる組成を有することを特徴とする発光装置。
(M1−x1Eux1)3−y1Si13−z1Al3+z1O2+uN21−w (1)
(上記一般式(1)中、MはIA族元素、IIA族元素、IIIA族元素、Alを除くIIIB族元素、希土類元素、およびIVB族元素から選択される元素である。x1、y1、z1、u、wは、次の関係を満たす。
0<x1<1、
−0.1<y1<0.3、
−3<z1≦1、
−3<u−w≦1.5)
(M’1−x2Eux2)a1Sib1AlOc1Nd1 (2)
(上記一般式(2)中、M’はIA族元素、IIA族元素、IIIA族元素、Alを除くIIIB族元素、希土類元素、およびIVB族元素から選択される元素である。x2、a1、b1、c1、d1は、次の関係を満たす。
0<x2<1、
0.55<a1<0.95
2.0<b1<3.9、
0<c1<0.6、
4<d1<5.7) - 前記第2の発光部を取り囲むように前記第3の発光部が実装され、
前記第3の発光部を取り囲むように前記第1の発光部が実装されることを特徴とする請求項1記載の発光装置。 - 前記樹脂層が透明なシリコーン樹脂、または、黄色蛍光体を含有する樹脂であることを特徴とする請求項1または請求項2記載の発光装置。
- 前記第1、第2および第3の発光素子が同一種類の発光素子であることを特徴とする請求項1ないし請求項3いずれか一項記載の発光装置。
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JP2012163353A JP5677377B2 (ja) | 2010-09-06 | 2012-07-24 | 発光装置 |
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JP2011177807A Division JP5127964B2 (ja) | 2010-09-06 | 2011-08-16 | 発光装置 |
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JP2012235157A true JP2012235157A (ja) | 2012-11-29 |
JP5677377B2 JP5677377B2 (ja) | 2015-02-25 |
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US (1) | US8414145B2 (ja) |
EP (1) | EP2426716B1 (ja) |
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Cited By (1)
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JP2015165536A (ja) * | 2014-03-03 | 2015-09-17 | ウシオ電機株式会社 | 発光装置および発光モジュール |
Families Citing this family (15)
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---|---|---|---|---|
JP5592602B2 (ja) * | 2008-07-31 | 2014-09-17 | 株式会社東芝 | 蛍光体およびそれを用いた発光装置 |
US8820950B2 (en) * | 2010-03-12 | 2014-09-02 | Toshiba Lighting & Technology Corporation | Light emitting device and illumination apparatus |
JP5185421B2 (ja) * | 2010-09-09 | 2013-04-17 | 株式会社東芝 | 赤色発光蛍光体およびそれを用いた発光装置 |
JP2012109397A (ja) * | 2010-11-17 | 2012-06-07 | Panasonic Corp | 発光装置 |
TWI509845B (zh) * | 2012-03-15 | 2015-11-21 | Lextar Electronics Corp | 光源模組 |
US9784416B2 (en) * | 2012-04-27 | 2017-10-10 | Schreder | Multi-coloured light sources |
WO2014034024A1 (ja) * | 2012-08-30 | 2014-03-06 | パナソニック株式会社 | 電子部品パッケージおよびその製造方法 |
US9449937B2 (en) | 2012-09-05 | 2016-09-20 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI468810B (zh) * | 2012-11-05 | 2015-01-11 | Innocom Tech Shenzhen Co Ltd | 背光模組 |
WO2014115492A1 (ja) * | 2013-01-24 | 2014-07-31 | パナソニック株式会社 | 固体光源装置 |
JP2014146661A (ja) | 2013-01-28 | 2014-08-14 | Panasonic Corp | 発光モジュール、照明装置および照明器具 |
JP6233750B2 (ja) * | 2014-03-14 | 2017-11-22 | パナソニックIpマネジメント株式会社 | 発光装置およびその製造方法、照明用光源、並びに照明装置 |
WO2015152568A1 (ko) * | 2014-04-04 | 2015-10-08 | 송창환 | 연성 led 광원 패널 및 이를 이용한 영상 촬영용 연성 led 조명 장치 |
JP2017135134A (ja) * | 2016-01-25 | 2017-08-03 | パナソニックIpマネジメント株式会社 | 発光装置 |
US10309588B2 (en) | 2016-08-11 | 2019-06-04 | Abl Ip Holding Llc | Luminaires with transition zones for glare control |
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