JP2012218989A - Method for manufacturing mold for molding optical element, and mold for molding optical element - Google Patents
Method for manufacturing mold for molding optical element, and mold for molding optical element Download PDFInfo
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Abstract
Description
本発明は、レンズ、プリズムなどの光学素子をガラス素材のプレス成形により製造する際に使用される光学素子成形用型の製造方法に関するものである。 The present invention relates to a method of manufacturing an optical element molding die used when optical elements such as lenses and prisms are manufactured by press molding of a glass material.
ガラス研磨工程を必要とせず、ガラス素材のプレス成形によってレンズを製造する技術は、従来の光学素子成形用型の製造方法において必要とされた複雑な工程を省き、簡単かつ安価にレンズを製造することを可能とした。このような、ガラスの光学素子のプレス成形に使用される型材に要求される性質としては、硬度、耐熱性、離型性、鏡面加工性などに優れていることが挙げられる。 The technology for manufacturing a lens by press-molding a glass material without the need for a glass polishing process eliminates the complicated steps required in the conventional optical element molding mold manufacturing method, and easily and inexpensively manufactures a lens. Made it possible. Properties required for such a mold material used for press molding of a glass optical element include excellent hardness, heat resistance, releasability, and mirror finish.
従来、この種の型材として、金属、セラミックスや、それらをコーティングした材料など、数多くの提案がなされている。そのなかでも、ダイヤモンド状炭素膜、水素化アモルファスカーボン膜（ａ−Ｃ：Ｈ膜）、硬質炭素膜、テトラヘドラルアモルファスカーボン膜（ｔａＣ膜）などの炭素膜を用いた型は、型とガラスとの離型性が良く、ガラスとの融着を起こしにくい利点を持っている。 Conventionally, many proposals have been made for this type of mold material, such as metals, ceramics, and materials coated with them. Among them, a mold using a carbon film such as a diamond-like carbon film, a hydrogenated amorphous carbon film (aC: H film), a hard carbon film, a tetrahedral amorphous carbon film (taC film) is a mold and a glass. It has the advantage that it can be easily released from the glass and is less likely to cause fusion with glass.
そこで、耐熱性の良い炭素膜としては、特許文献１に開示されたようにフィルタードカソーディックバキュームアーク法（ＦＣＶＡ法）で得られたｔａＣ膜が知られている。従来のメタン系ガスを用いるダイヤモンド状炭素膜（硬質炭素膜）は、水素を含み、高温成形時に炭素と水素の結合が切れて、炭素同士がグラファイト結合（ｓｐ２結合）して硬度低下し易い。これに対してｔａＣ膜は、その製法であるＦＣＶＡ法がグラファイトを原料とするため、水素レスのダイヤモンド状炭素膜（高強度なｓｐ３結合）を得ることが可能である。 Therefore, as a carbon film having good heat resistance, a taC film obtained by a filtered cathodic vacuum arc method (FCVA method) as disclosed in Patent Document 1 is known. A diamond-like carbon film (hard carbon film) using a conventional methane-based gas contains hydrogen, and the bond between carbon and hydrogen is broken at the time of high-temperature molding, and the carbon is easily graphite-bonded (sp2 bond) and the hardness is likely to decrease. On the other hand, the taC film can be obtained as a hydrogen-less diamond-like carbon film (high-strength sp3 bond) because the FCVA method, which is its production method, uses graphite as a raw material.
一般的にダイヤモンド状炭素膜、ａ−Ｃ：Ｈ膜、硬質炭素膜、ｔａＣ膜を用いた型は、型とガラスとの離型性が良く、ガラスとの融着を起こしにくい利点がある。しかしながら、型と膜の密着性が一般に低く、成形操作を数百回以上繰り返して行うと、膜が剥離し、十分な成形性能が得られないことがある。 In general, a mold using a diamond-like carbon film, an aC: H film, a hard carbon film, or a taC film has an advantage in that the mold and the glass are easily releasable and hardly cause fusion with the glass. However, the adhesion between the mold and the film is generally low, and if the molding operation is repeated several hundred times or more, the film peels off and sufficient molding performance may not be obtained.
前述のＦＣＶＡ法によるｔａＣ膜の成膜方法は、陰極点からのイオン放出と同時に発生する陰極材料の微粒子を、プラズマ磁気輸送中のトラップ除去しながら、炭素イオンだけを型母材（成形用型基板）へ到達させて成膜している。しかしながらＦＣＶＡ法の場合、型の周辺部の耐熱性が低いという問題点があった。特に、開角（型の光学軸中心と光学有効径位置における法線方向とが為す角度）の大きな形状の型の周辺部は、頂点部に比べて耐熱性が劣る傾向があった。そのため、型の周辺部において、成形回数の増加とともにｔａＣ膜が剥離し、耐久劣化を引き起こしていた。 The above-described method for forming a taC film by the FCVA method is a method in which fine particles of a cathode material generated at the same time as ion emission from a cathode spot are removed by trapping during plasma magnetic transport, and only carbon ions are used as a mold base material (molding mold). The film is formed by reaching the substrate. However, in the case of the FCVA method, there is a problem that the heat resistance at the periphery of the mold is low. In particular, the peripheral part of the mold having a large opening angle (angle formed by the optical axis center of the mold and the normal direction at the optical effective diameter position) tended to be inferior in heat resistance compared to the apex part. For this reason, the taC film peeled off at the periphery of the mold as the number of moldings increased, causing deterioration in durability.
また、複数の型母材に対してｔａＣ膜を形成するためには、ＦＣＶＡ装置の中に複数の型母材を配置し、同時に成膜することが必要となる。この場合、ＦＣＶＡ装置内における各型母材の磁場の状態を等しくする必要がある。 Further, in order to form a taC film on a plurality of mold base materials, it is necessary to dispose a plurality of mold base materials in the FCVA apparatus and to form films simultaneously. In this case, it is necessary to make the state of the magnetic field of each mold base material in the FCVA apparatus equal.
本発明は、複数の型母材に対してｔａＣ膜を形成する際に、型母材の頂点部から周辺部まで均一な膜質のｔａＣ膜を有する光学素子成形用型を製造することを目的とするものである。 An object of the present invention is to produce an optical element molding die having a taC film having a uniform film quality from the apex portion to the peripheral portion of a mold base material when forming a taC film on a plurality of mold base materials. To do.
本発明は、成形面が凸状の光学素子成形用型の製造方法において、内部に磁石が配置された複数の型母材を、真空チャンバー内において成形用型保持具を介して同心円状に配置し、前記各型母材の周りにはリング状磁石が配置されており、前記磁石とリング状磁石により形成される磁場は、前記型母材の頂点部の法線方向の磁束密度が最も高くなるように形成されており、前記各型母材に電圧を印加しながら、フィルタードカソーディックバキュームアーク法によって、前記型母材の成形面にテトラヘドラルアモルファスカーボン層を成膜するものである。 The present invention relates to a method for manufacturing an optical element molding die having a convex molding surface, in which a plurality of mold base materials having magnets arranged therein are arranged concentrically through a molding die holder in a vacuum chamber. A ring-shaped magnet is disposed around each mold base material, and the magnetic field formed by the magnet and the ring-shaped magnet has the highest magnetic flux density in the normal direction of the apex portion of the mold base material. A tetrahedral amorphous carbon layer is formed on the molding surface of the mold base material by a filtered cathodic vacuum arc method while applying a voltage to each of the mold base materials. .
ＦＣＶＡ法によってｔａＣ膜を成膜する工程において、型母材の法線方向に磁場を形成し、成形用型保持具に電圧を印加することで、型の周辺部において膜質が劣るのを防ぐ。均一な膜質のｔａＣ膜を設けることで、光学素子成形用型のプレス成形耐久回数を増し、光学素子の生産コストを大幅に低減することができる。 In the step of forming the taC film by the FCVA method, a magnetic field is formed in the normal direction of the mold base material, and a voltage is applied to the mold holder to prevent the film quality from being deteriorated at the periphery of the mold. By providing a taC film having a uniform film quality, it is possible to increase the number of press molding durability of the optical element molding die and greatly reduce the production cost of the optical element.
（第１の実施の形態）
本発明のｔａＣ膜（テトラヘドラルアモルファスカーボン膜）を形成するフィルタードカソーディックバキュームアーク（ＦＣＶＡ）法の成膜装置の模式面を図１示す。真空チャンバー１内において、成形用型保持具２に複数の光学素子成形用型３は保持されている。光学素子成形用型３は凸状の成形面を有している。成形用型保持具２は、回転軸１７を中心に不図示の機構により回転し、不図示の機構により、所定の電圧を印加することができる。光学素子成形用型３の内部には、磁石の長さ方向（図面の水平方法）に着磁された磁石４が設けられている。各光学素子成形用型３の周りには、磁石４と逆方向の磁界を形成するリング状磁石５が設けられている。バキュームアーク電源６により、アークプラズマ生成室７で炭素プラズマ（炭素イオン）を生成する。フィルターコイル８に所望の電流を流すことにより磁界が発生し、形成される磁力線により、炭素イオンは矢印９の方向に搬送される。炭素プラズマが搬送される原理は、炭素イオンの電子が、磁力線に絡むように、サイクロトロン運動し、前記電子に炭素イオンが、クーロン力により、追随するためである。なお真空チャンバー１内は、真空度が１×１０−４Ｐａ以下に不図示の真空ポンプにより排気されている。
(First embodiment)
FIG. 1 shows a schematic surface of a film forming apparatus of a filtered cathodic vacuum arc (FCVA) method for forming a taC film (tetrahedral amorphous carbon film) of the present invention. In the vacuum chamber 1, a plurality of optical element molding dies 3 are held by a molding die holder 2. The optical element molding die 3 has a convex molding surface. The molding die holder 2 is rotated by a mechanism (not shown) around the rotation shaft 17 and a predetermined voltage can be applied by the mechanism (not shown). Inside the optical element molding die 3, a magnet 4 magnetized in the magnet length direction (horizontal method in the drawing) is provided. Around each optical element molding die 3, a ring-shaped magnet 5 that forms a magnetic field in a direction opposite to that of the magnet 4 is provided. Carbon plasma (carbon ions) is generated in an arc plasma generation chamber 7 by a vacuum arc power source 6. A magnetic field is generated by passing a desired current through the filter coil 8, and the carbon ions are conveyed in the direction of the arrow 9 by the magnetic lines of force formed. The principle that the carbon plasma is transported is that the electrons of the carbon ions move in a cyclotron so that they are entangled with the lines of magnetic force, and the carbon ions follow the electrons by the Coulomb force. The vacuum chamber 1 is evacuated by a vacuum pump (not shown) so that the degree of vacuum is 1 × 10 −4 Pa or less.
図２は成形用型保持具２における光学素子成形用型３とリング状磁石５の配置を示した模式図である。図２に示したように、光学素子成形用型３の中心軸１７を中心に、同心円状（２重の円周１５、１６の上）に複数の光学素子成形用型３が均等に配置されている。各光学素子成形用型３に設けられたリング状磁石５は、お互いが干渉しないよう配置されている。 FIG. 2 is a schematic diagram showing the arrangement of the optical element molding die 3 and the ring-shaped magnet 5 in the molding die holder 2. As shown in FIG. 2, a plurality of optical element molding dies 3 are evenly arranged concentrically (on the double circumferences 15 and 16) around the central axis 17 of the optical element molding dies 3. ing. The ring-shaped magnets 5 provided in the respective optical element molding dies 3 are arranged so as not to interfere with each other.
本発明において、炭素イオンは、スキャニングコイル１０によって発生する磁場により、複数ある光学素子成形用型３の頂点に当るように制御されている。すなわち、イオンビーム径以内に、光学素子成形用型ガラス成形面が入るようイオンビーム径のスキャンの制御を行って、炭素イオンを光学素子成形用型３に到達させる。イオンビーム径スキャンの制御を行わない場合、光学素子成形用型３の成形面に成膜しＴａＣ膜の膜厚分布と膜質が不均一になる。特に光学素子成形用型３の周辺部の膜厚が薄く、膜密度が低下するため、成形耐久性が大幅に劣化する。 In the present invention, carbon ions are controlled by the magnetic field generated by the scanning coil 10 so as to hit the apex of the plurality of optical element molding dies 3. That is, the scanning of the ion beam diameter is controlled so that the optical element forming mold glass forming surface is within the ion beam diameter, and the carbon ions reach the optical element forming mold 3. If the ion beam diameter scan is not controlled, the film thickness distribution and film quality of the TaC film are not uniform because the film is formed on the molding surface of the optical element molding die 3. In particular, since the film thickness of the peripheral part of the optical element molding die 3 is thin and the film density is lowered, the molding durability is greatly deteriorated.
また、磁石４とリング状磁石５の配置や強度は、形成された磁力線の磁束密度が、光学素子成形用型３の頂点部の法線方向が最も強くなるように調整されている。これにより、炭素イオンは光学素子成形用型３の頂点部に引き寄せられる。光学素子成形用型３の頂点部以外の磁束密度が最も強くなると、炭素イオンの光学素子成形用型３への垂直入射分の成膜レートが低下し、ガラス成形面の膜厚分布と膜質が不均一になる。 Further, the arrangement and strength of the magnet 4 and the ring-shaped magnet 5 are adjusted such that the magnetic flux density of the formed magnetic field lines is strongest in the normal direction of the apex portion of the optical element molding die 3. As a result, carbon ions are attracted to the apex of the optical element molding die 3. When the magnetic flux density other than the apex portion of the optical element molding die 3 is the strongest, the film formation rate for vertical incidence of carbon ions on the optical element molding die 3 decreases, and the film thickness distribution and film quality of the glass molding surface are reduced. It becomes uneven.
成形用型保持具２及び光学素子成形用型３に印加した電場と、光学素子成形用型３の内部に設けられた磁石４と、リング状磁石５により形成される磁場により、炭素イオンが、光学素子成形用型３方向に引き寄せられる。これにより、開角の大きな光学素子成形用型の成形面の法線方向に炭素イオンを効率的に入射させ、光学素子成形用型の頂点部と周辺部の膜厚分布と膜質の均質化が図られる。このようにして、光学素子成形用型３へｔａＣ膜は成膜される。 Carbon ions are generated by the electric field applied to the molding die holder 2 and the optical element molding die 3, the magnet 4 provided inside the optical element molding die 3, and the magnetic field formed by the ring-shaped magnet 5. It is drawn in the direction of the optical element molding die 3. As a result, carbon ions are efficiently incident in the normal direction of the molding surface of the optical element molding die having a large opening angle, and the film thickness distribution and film quality at the apex and peripheral portions of the optical element molding die are made uniform. Figured. In this way, the taC film is formed on the optical element molding die 3.
この時、光学素子成形用型３の頂点部の法線方向の磁束密度は０．００３テスラ以上０．０１５テスラ以下とすることが好ましい。磁束密度が０．００３テスラよりも小さいと、炭素イオンが型に引き寄せられる効果がなく、成膜レートが低下する。また、成形用型保持具２及び光学素子成形用型３に印加する電場は、１０Ｖ以上１００Ｖ以下の正電圧が好ましい。正電圧が１０Ｖより低くなると、炭素イオンを曲げる効果が小さくなり、１００Ｖより大きくなると、炭素イオンが反発して、成膜レートが低下する。 At this time, the magnetic flux density in the normal direction of the apex of the optical element molding die 3 is preferably 0.003 Tesla or more and 0.015 Tesla or less. When the magnetic flux density is smaller than 0.003 Tesla, there is no effect of attracting carbon ions to the mold, and the film formation rate is lowered. The electric field applied to the molding die holder 2 and the optical element molding die 3 is preferably a positive voltage of 10V to 100V. When the positive voltage is lower than 10V, the effect of bending the carbon ions is reduced. When the positive voltage is higher than 100V, the carbon ions are repelled and the film formation rate is reduced.
さらに、光学素子成形用型３は絶縁部材を介して成形用型保持具２により保持することで、光学素子成形用型３を浮遊電位としても良い。この時、成形用型保持具２に１０Ｖから１００Ｖの正電圧を印加することにより、光学素子成形用型３の正電位が低くなる。この効果により、光学素子成形用型３の方が、炭素イオンを近づけるため、成膜レートが高くなる。 Furthermore, the optical element molding die 3 may be set to a floating potential by holding the optical element molding die 3 with the molding die holder 2 via an insulating member. At this time, the positive potential of the optical element molding die 3 is lowered by applying a positive voltage of 10 V to 100 V to the molding die holder 2. Due to this effect, the optical element molding die 3 is closer to carbon ions, so that the film formation rate is higher.
図３は、ｔａＣ膜を成膜することで製造された光学素子成形用型の断面図である。型母材１１から順に、ＳｉＣ膜１２、ｔａＣ膜１３が成膜されている。１４は磁石４が挿入される型母材の開口部である。型母材１１は、ＷＣを主成分とする超硬合金が好ましいが、ＳｉＣの焼結体にＣＶＤ法で形成されたＳｉＣ膜を用いた型母材でも適用される。ただしその場合は、型母材に直接、ＦＣＶＡ法によりｔａＣ膜が形成される。なお、型母材１１とＳｉＣ膜１２の間に、Ｔｉ膜、ＴｉＡｌＮ膜を形成しても良い。 FIG. 3 is a cross-sectional view of an optical element molding die manufactured by forming a taC film. An SiC film 12 and a taC film 13 are formed in this order from the mold base material 11. Reference numeral 14 denotes an opening of the mold base material into which the magnet 4 is inserted. The mold base material 11 is preferably a cemented carbide containing WC as a main component, but is also applicable to a mold base material using a SiC film formed by a CVD method on a SiC sintered body. However, in that case, the taC film is formed directly on the mold base material by the FCVA method. A Ti film or a TiAlN film may be formed between the mold base material 11 and the SiC film 12.
（実施例１）
図１、図２に示す装置により、図３に示すような光学素子成形用型を形成した。光学素子成形用型形状としては、直径１８ｍｍ、ガラス成形面の直径１４ｍｍ、凸形状で開角は６０度である。
Example 1
An optical element molding die as shown in FIG. 3 was formed by the apparatus shown in FIGS. The optical element molding die has a diameter of 18 mm, a glass molding surface diameter of 14 mm, a convex shape and an opening angle of 60 degrees.
まずに、ＷＣを主成分とする超硬合金１１に、スパッタリング装置を用いて光学素子成形面側に、ＳｉＣ膜１２を６０ｎｍ成膜した。これは、後述するｔａＣ膜を超硬合金１１に成膜する上で、密着力を向上させるため中間層として成膜がなされている。本実施例では、スパッタ成膜法を用いたが、その他の成膜法としてプラズマソースイオンインプラテーション法（Ｐｌａｓｍａ−Ｓｏｕｃｅ−Ｉｏｎ−Ｉｍｐｌａｔａｔｉｏｎ、以下ＰＳＩＩ法）を用いても勿論可能である。 First, a SiC film 12 having a thickness of 60 nm was formed on the cemented carbide 11 containing WC as a main component on the optical element molding surface side using a sputtering apparatus. This is formed as an intermediate layer in order to improve adhesion when a taC film described later is formed on the cemented carbide 11. In this embodiment, the sputter film formation method is used, but it is of course possible to use a plasma source ion implantation method (Plasma-Source-Ion-Implation, hereinafter referred to as PSII method) as another film formation method.
次に型母材１１に設けた直径７ｍｍ、深さ４８ｍｍの開口部１４に、外径６．５ｍｍ、高さ４８ｍｍ、残留磁束密度０．５テスラを長さ方向に着磁した磁石４のＮ極を型頂点に向けて挿入した後、図１及び図２に示すＦＣＶＡ法の成膜装置に設置した。設置条件として、成形用型保持具２上の光学素子成形用型配置外周円１５の直径を１８１ｍｍとし、均等に光学素子成形用型を１２個配置した。成形用型保持具２上の光学素子成形用型配置内周円１６の直径を１１０ｍｍとし、均等に直径１８ｍｍの光学素子成形用型を６個、外周に配置型と均等な距離になるよう配置した。 Next, the N of the magnet 4 magnetized in the length direction with an outer diameter of 6.5 mm, a height of 48 mm, and a residual magnetic flux density of 0.5 Tesla in the opening 14 having a diameter of 7 mm and a depth of 48 mm provided in the mold base 11. After the pole was inserted toward the apex of the mold, it was placed in the FCVA film forming apparatus shown in FIGS. As installation conditions, the diameter of the optical element molding die arrangement outer circumference circle 15 on the molding die holder 2 was set to 181 mm, and twelve optical element molding dies were equally arranged. The diameter of the inner peripheral circle 16 of the optical element molding mold on the molding die holder 2 is 110 mm, and six optical element molding molds having a diameter of 18 mm are uniformly arranged on the outer periphery so as to be at an equal distance from the arrangement mold. did.
リング形状の磁石５としては、外径３７ｍｍ、内径３０ｍｍ、高さ３ｍｍ、残留磁束密度０．０５テスラ長さ方向に着磁した磁石５のＳ極をＦＣＶＡ源方向に向けて装着した。 As the ring-shaped magnet 5, the S pole of the magnet 5 magnetized in the length direction of the outer diameter of 37 mm, the inner diameter of 30 mm, the height of 3 mm, and the residual magnetic flux density of 0.05 Tesla was attached toward the FCVA source direction.
この時の、外周の型頂点部の磁束密度は０．００６テスラ、内周の型頂点部の磁束密度は０．００７テスラであり、０．００７テスラより大きな磁束密度を有する箇所は、成形用型保持具３上に無かった。 At this time, the magnetic flux density at the outer peripheral mold apex is 0.006 Tesla, and the magnetic flux density at the inner peripheral mold apex is 0.007 Tesla. There was no mold holder 3.
次に、成形用型保持具３に、プラス電位２０Ｖとなる様に電圧を印加して、ｔａＣ膜１３を９００秒成膜した。ｔａＣの成膜条件としては、スキャニングコイル１０によって発生する磁場（磁界の向きは磁石４と同じ）により、外周円１５と内周円１６にイオンビーム径の中心が当るよう制御した。本実施例のイオンビーム径は２８ｍｍであった。 Next, a voltage was applied to the molding die holder 3 so that the positive potential was 20 V, and the taC film 13 was formed for 900 seconds. The film formation conditions for taC were controlled such that the center of the ion beam diameter hits the outer circle 15 and the inner circle 16 by the magnetic field generated by the scanning coil 10 (the direction of the magnetic field is the same as that of the magnet 4). The ion beam diameter in this example was 28 mm.
本実施例の膜厚を計測した結果、型頂点部での膜厚は１１０ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．５４〜０．８６の範囲であった。ｔａＣ膜の膜質評価として、７００℃の窒素雰囲気中で３時間加熱後のラマン・スペクトルの１３６０ｃｍ−１の強度Ｉｄと１５８００ｃｍ−１の強度Ｉｇの比Ｉｄ／Ｉｇを用いた。一般的に、成形後のＩｄ／Ｉｇが小さいほど、耐熱性が良いと言われている。本実施例の成形後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．３〜０．６１の範囲であった。 As a result of measuring the film thickness of this example, the film thickness at the mold apex was 110 nm, and the ratio of the film thickness at the mold opening angle of 60 degrees to the film thickness at the mold apex was 0.54 to 0.86. It was in range. As film quality evaluation of taC film, using the ratio Id / Ig of 700 ° C. intensity Ig of intensity Id and 15800Cm -1 of Raman spectrum of 1360 cm -1 after 3 hours in a nitrogen atmosphere. Generally, it is said that the smaller the Id / Ig after molding, the better the heat resistance. As a result of measuring Id / Ig after molding in this example, Id / Ig at the mold apex portion and the mold opening angle of 60 degrees was in the range of 0.3 to 0.61.
次に、上記、光学素子成形用型材を用いて光学レンズのプレス成形を、連続的に５００ショット行った。成形ガラスは、希土類を含む棚珪酸系ガラス（Ｔｇ：６１０℃、屈折率：１．８５）で、成形条件は、窒素雰囲気下、プレス温度６９０℃で行った。成形の結果、型と成形された光学素子との間で、離型性は良好であり且つ、融着不良、成膜剥れ不良の無いプレス成形が行なわれた。また、成形用型保持具３に、プラス電位を１０Ｖ、３０Ｖにしても同様の成形結果が得られた。これらの結果を表１に示す。 Next, 500 shots of the optical lens were press-molded continuously using the mold for molding an optical element. Molded glass was shelf silicate glass containing rare earths (Tg: 610 ° C., refractive index: 1.85), and the molding conditions were a nitrogen atmosphere and a press temperature of 690 ° C. As a result of molding, press molding was performed between the mold and the molded optical element with good releasability and no fusing defect and film peeling defect. Further, the same molding result was obtained even when the plus potential was set to 10V and 30V on the mold holder 3. These results are shown in Table 1.
（実施例２）
光学素子成形用型３と成形用型保持具２を絶縁状態にする以外は、実施例１と同様に、ｔａＣ膜を９００秒成膜した。中間層としてのＳｉＣ膜は、実施例１と同様スパッタ装置を用いて６０ｎｍ成膜した。本実施例の型膜厚を計測した結果、型頂点部での膜厚は１３０ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．６９〜０．８１の範囲であった。本実施例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．４〜０．５の範囲であった。
(Example 2)
A taC film was formed for 900 seconds in the same manner as in Example 1 except that the optical element molding die 3 and the molding die holder 2 were in an insulated state. The SiC film as the intermediate layer was formed to a thickness of 60 nm using a sputtering apparatus as in Example 1. As a result of measuring the mold film thickness of this example, the film thickness at the mold apex is 130 nm, and the ratio of the film thickness at the mold opening angle of 60 degrees to the film thickness at the mold apex is 0.69 to 0.81. Range. As a result of measuring Id / Ig after heating in this example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 0.4 to 0.5.
実施例１と同様に、成形評価を行なった結果、型と成形された光学素子との間で、離型性は良好であり且つ、融着不良、成膜剥れ不良の無いプレス成形が行なわれた。これらの結果を表１に示す。 As in Example 1, as a result of molding evaluation, press molding was performed between the mold and the molded optical element with good releasability and no fusing failure or film peeling failure. It was. These results are shown in Table 1.
（実施例３）
リング形状の磁石５の残留磁束密度を０．０９テスラにする以外は、実施例２と同様に、ｔａＣ膜を９００秒成膜した。中間層としてのＳｉＣ膜は、実施例１と同様スパッタ装置を用いて６０ｎｍ成膜した。
(Example 3)
A taC film was formed for 900 seconds in the same manner as in Example 2 except that the residual magnetic flux density of the ring-shaped magnet 5 was changed to 0.09 Tesla. The SiC film as the intermediate layer was formed to a thickness of 60 nm using a sputtering apparatus as in Example 1.
本実施例の外周の型頂点部の磁束密度は０．００８テスラ、内周の型頂点部の磁束密度は０．００９テスラであり、０．００９テスラより大きな磁束密度を有する箇所は、成形用型保持具３上に無かった。本実施例の膜厚を計測した結果、型頂点部での膜厚は９８ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．７５〜１．１の範囲であった。本実施例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．３１〜０．５４の範囲であった。 In this example, the magnetic flux density at the outer peripheral mold apex portion is 0.008 Tesla, the inner peripheral mold apex magnetic flux density is 0.009 Tesla, and a portion having a magnetic flux density greater than 0.009 Tesla is for molding. There was no mold holder 3. As a result of measuring the film thickness of this example, the film thickness at the mold apex portion is 98 nm, and the ratio of the film thickness at the mold opening angle of 60 degrees to the film thickness at the mold apex portion is 0.75 to 1.1. It was in range. As a result of measuring Id / Ig after heating in this example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 0.31 to 0.54.
実施例１と同様に、成形評価を行なった結果、型と成形された光学素子との間で、離型性は良好であり且つ、融着不良、成膜剥れ不良の無いプレス成形が行なわれた。また、成形用型保持具３に、プラス電位を１０Ｖ、３０Ｖにしても同様の成形結果が得られた。これらの結果を表１に示す。 As in Example 1, as a result of molding evaluation, press molding was performed between the mold and the molded optical element with good releasability and no fusing failure or film peeling failure. It was. Further, the same molding result was obtained even when the plus potential was set to 10V and 30V on the mold holder 3. These results are shown in Table 1.
（比較例１）
リング形状の磁石５の残留磁束密度を０．１８テスラにする以外は、実施例２と同様に、ｔａＣ膜を９００秒成膜した。中間層としてのＳｉＣ膜は、実施例１と同様スパッタ装置を用いて６０ｎｍ成膜した。
(Comparative Example 1)
A taC film was formed for 900 seconds in the same manner as in Example 2 except that the residual magnetic flux density of the ring-shaped magnet 5 was changed to 0.18 Tesla. The SiC film as the intermediate layer was formed to a thickness of 60 nm using a sputtering apparatus as in Example 1.
本比較例の外周の型頂点部の磁束密度は０．００８テスラ、内周の型頂点部の磁束密度は０．０１０テスラであり、０．０１３テスラの磁束密度を有する箇所が、リング形状の磁石間に存在した。本比較例の型膜厚を計測した結果、型頂点部での膜厚は７０ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．０７〜２．２９の範囲であった。本比較例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．４〜１．１の範囲であった。 The magnetic flux density at the outer peripheral mold apex portion of this comparative example is 0.008 Tesla, the inner peripheral die apex magnetic flux density is 0.010 Tesla, and the portion having the magnetic flux density of 0.013 Tesla is a ring shape. Existed between the magnets. As a result of measuring the mold film thickness of this comparative example, the film thickness at the mold apex was 70 nm, and the ratio of the film thickness at a mold opening angle of 60 degrees to the film thickness at the mold apex was 0.07 to 2.29. Range. As a result of measuring Id / Ig after heating in this comparative example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 0.4 to 1.1.
次に、この光学素子成形用型材を用いて実施例１と同様に光学レンズの成形を行なったが、１５０ショットで、ｔａＣ膜の周辺部の剥離が一部発生した。これらの結果を表１に示す。 Next, an optical lens was molded in the same manner as in Example 1 using this mold for molding an optical element. In 150 shots, a part of the peripheral portion of the taC film was peeled off. These results are shown in Table 1.
（比較例２）
リング形状の磁石５の残留磁束密度を０．２８テスラにする以外は、実施例２と同様に、ｔａＣ膜を９００秒成膜した。本比較例の外周の型頂点部の磁束密度は０．０１２テスラ、内周の型頂点部の磁束密度は０．０１４テスラであり、０．０１８テスラの磁束密度を有する箇所が、リング形状の磁石間に存在した。本比較例の型膜厚を計測した結果、外周部に設置した型頂点部での膜厚は８０ｎｍで、内周部に設置した型頂点部での膜厚は２６０ｎｍであった。内周部型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．０８〜０．７９の範囲であった。本比較例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．５〜１．５の範囲であった。
(Comparative Example 2)
A taC film was formed for 900 seconds as in Example 2 except that the residual magnetic flux density of the ring-shaped magnet 5 was 0.28 Tesla. In this comparative example, the magnetic flux density at the outer peripheral mold apex portion is 0.012 Tesla, the inner peripheral die apex magnetic flux density is 0.014 Tesla, and the portion having the magnetic flux density of 0.018 Tesla is a ring shape. Existed between the magnets. As a result of measuring the mold film thickness of this comparative example, the film thickness at the mold apex portion installed at the outer peripheral part was 80 nm, and the film thickness at the mold apex part installed at the inner peripheral part was 260 nm. The ratio of the film thickness at the mold opening angle of 60 degrees to the film thickness at the inner peripheral mold apex was in the range of 0.08 to 0.79. As a result of measuring Id / Ig after heating in this comparative example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 0.5 to 1.5.
次に、この光学素子成形用型材を用いて実施例１と同様に光学レンズの成形を行なったが、１３０ショットで、凸型周辺部の剥離が一部発生した。これらの結果を表１に示す。 Next, an optical lens was molded in the same manner as in Example 1 using this mold for molding an optical element. In 130 shots, a part of the convex peripheral part was peeled off. These results are shown in Table 1.
（比較例３）
型母材に入れる磁石を外径６．５ｍｍ、高さ６ｍｍ、残留磁束密度０．５テスラ、長さ方向に着磁した磁石４にする以外は、実施例２と同様に、ｔａＣ膜を９００秒成膜した。
(Comparative Example 3)
The taC film is made of 900 as in Example 2, except that the magnet to be put into the mold base is a magnet 4 having an outer diameter of 6.5 mm, a height of 6 mm, a residual magnetic flux density of 0.5 Tesla, and a magnetized in the length direction. Second film was formed.
本比較例の外周の型頂点部の磁束密度は０．００４テスラ、内周の型頂点部の磁束密度は０．００５テスラであり、０．００５テスラより大きな磁束密度を有する箇所は、成形用型保持具３上に無かった。本比較例の膜厚を計測した結果、外周部に設置した型頂点部での膜厚は９６ｎｍで、内周部に設置した型頂点部での膜厚は１４５ｎｍであった。内周部型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．２１〜１．７４の範囲であった。本比較例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．６〜１．７の範囲であった。 In this comparative example, the magnetic flux density at the outer peripheral mold apex portion is 0.004 Tesla, the inner peripheral die apex magnetic flux density is 0.005 Tesla, and a portion having a magnetic flux density greater than 0.005 Tesla is for molding. There was no mold holder 3. As a result of measuring the film thickness of this comparative example, the film thickness at the apex portion of the mold installed at the outer peripheral portion was 96 nm, and the film thickness at the apex portion of the mold installed at the inner peripheral portion was 145 nm. The ratio of the film thickness at a mold opening angle of 60 degrees to the film thickness at the inner peripheral mold apex was in the range of 0.21 to 1.74. As a result of measuring Id / Ig after heating in this comparative example, Id / Ig at the die apex portion and the die opening angle of 60 degrees was in the range of 0.6 to 1.7.
次に、この光学素子成形用型材を用いて実施例１と同様に光学レンズの成形を行なったが、１４０ショットで、凸型周辺部の剥離が一部発生した。これらの結果を表１に示す。 Next, an optical lens was molded in the same manner as in Example 1 using this mold for molding an optical element. However, in 140 shots, a part of the convex peripheral part was peeled off. These results are shown in Table 1.
（比較例４）
成形用型保持具３に、プラス電位を５Ｖにする以外は、実施例２と同様に、ｔａＣ膜を９００秒成膜した。本比較例の型膜厚を計測した結果、型頂点部での膜厚は１５０ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．６〜０．９の範囲であった。本比較例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが１．２〜１．９の範囲であった。
(Comparative Example 4)
A taC film was formed on the molding die holder 3 for 900 seconds in the same manner as in Example 2 except that the positive potential was changed to 5V. As a result of measuring the mold film thickness of this comparative example, the film thickness at the mold apex is 150 nm, and the ratio of the film thickness at the mold opening angle of 60 degrees to the film thickness at the mold apex is 0.6 to 0.9. Range. As a result of measuring Id / Ig after heating in this comparative example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 1.2 to 1.9.
次に、この光学素子成形用型材を用いて実施例１と同様に光学レンズの成形を行なったが、１００ショットで、凸型周辺部の剥離が一部発生した。これらの結果を表１に示す。 Next, using this optical element molding die, an optical lens was molded in the same manner as in Example 1. However, in 100 shots, a part of the peripheral portion of the convex mold was peeled off. These results are shown in Table 1.
（比較例５）
成形用型保持具３に、プラス電位を３５Ｖにする以外は、実施例２と同様に、ｔａＣ膜を９００秒成膜した。本比較例の型膜厚を計測した結果、型頂点部での膜厚は６０ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．４〜０．７の範囲であった。本比較例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．３〜０．５の範囲であった。
(Comparative Example 5)
A taC film was formed on the molding die holder 3 for 900 seconds in the same manner as in Example 2 except that the positive potential was set to 35V. As a result of measuring the mold film thickness of this comparative example, the film thickness at the mold apex was 60 nm, and the ratio of the film thickness at a mold opening angle of 60 degrees to the film thickness at the mold apex was 0.4 to 0.7. Range. As a result of measuring Id / Ig after heating in this comparative example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 0.3 to 0.5.
次に、この光学素子成形用型材を用いて実施例１と同様に光学レンズの成形を行なったが、２２０ショットで、凸型周辺部の剥離が一部発生した。これらの結果を表１に示す。 Next, using this mold for molding an optical element, an optical lens was molded in the same manner as in Example 1. In 220 shots, a part of the convex peripheral part was peeled off. These results are shown in Table 1.
（比較例６）
スキャニングコイル１０によって発生する磁場により、外周円１５と内周円１６に設置された光学素子成形用型の光学有効径外にイオンビーム径中心が当るよう制御する以外は実施例２と同様に、ｔａＣ膜を９００秒成膜した。本比較例の型膜厚を計測した結果、型頂点部での膜厚は５０ｎｍで、型頂点部での膜厚に対する型開角６０度での膜厚の比率が０．０５〜１．１５の範囲であった。本比較例の加熱後のＩｄ／Ｉｇを計測した結果、型頂点部及び型開角６０度でのＩｄ／Ｉｇが０．４〜１．１の範囲であった。
(Comparative Example 6)
As in Example 2, except that the magnetic field generated by the scanning coil 10 is controlled so that the center of the ion beam diameter is outside the effective optical diameter of the optical element molding die placed on the outer circumference circle 15 and the inner circumference circle 16. A taC film was formed for 900 seconds. As a result of measuring the mold film thickness of this comparative example, the film thickness at the mold apex was 50 nm, and the ratio of the film thickness at a mold opening angle of 60 degrees to the film thickness at the mold apex was 0.05 to 1.15. Range. As a result of measuring Id / Ig after heating in this comparative example, Id / Ig at a mold apex portion and a mold opening angle of 60 degrees was in a range of 0.4 to 1.1.
次に、この光学素子成形用型材を用いて実施例１と同様に光学レンズの成形を行なったが、１６０ショットで、凸型周辺部の剥離が一部発生した。これらの結果を表１に示す。 Next, using this optical element molding die, an optical lens was molded in the same manner as in Example 1. However, in 160 shots, a part of the convex peripheral part was peeled off. These results are shown in Table 1.
（実施例４）
光学素子成形用型３（凸形状で開角は５５度）と成形用型保持具２を絶縁状態にし、実施例１と同様にしてｔａＣ膜を成膜した。中間層としてのＳｉＣ膜は、実施例１と同様スパッタ装置を用いて６０ｎｍ成膜した。
Example 4
The optical element molding die 3 (convex shape with an opening angle of 55 degrees) and the molding die holder 2 were insulated, and a taC film was formed in the same manner as in Example 1. The SiC film as the intermediate layer was formed to a thickness of 60 nm using a sputtering apparatus as in Example 1.
光学素子成形用型３の光学成形面の略法線方向に向けて−０．００３、＋０．００３、＋０．００４、＋０．０１５、＋０．０１６テスラの磁束密度中に設置した。また、型保持部材５（型母材３とは絶縁状態）に、−１０、±０、＋１０、＋５０、＋１００、＋１０５ボルトを印加し、ｔａＣ膜１３を２００ｎｍ成膜した。 It was installed in a magnetic flux density of −0.003, +0.003, +0.004, +0.015, and +0.016 Tesla toward the substantially normal direction of the optical molding surface of the optical element molding die 3. Further, −10, ± 0, +10, +50, +100, +105 volts were applied to the mold holding member 5 (insulated from the mold base material 3), and the taC film 13 was formed to a thickness of 200 nm.
次に、上記、光学素子成形用型材を用いて光学レンズのプレス成形を、連続的に８００ショット行った。成形ガラスは、希土類を含む棚珪酸系ガラス（Ｔｇ：６１０℃、屈折率：１．８５）で、成形条件は、窒素雰囲気下、プレス温度７００℃で行った。成形の結果、型と成形された光学素子との間で、離型性は良好であり且つ、融着不良、成膜剥れ不良の無いプレス成形が行なわれた。成形結果について表２にまとめた。 Next, 800 shots of the optical lens were press-molded continuously using the above-mentioned mold for molding an optical element. The molded glass was shelf silicate glass containing rare earth (Tg: 610 ° C., refractive index: 1.85), and the molding conditions were performed at a press temperature of 700 ° C. in a nitrogen atmosphere. As a result of molding, press molding was performed between the mold and the molded optical element with good releasability and no fusing defect and film peeling defect. The molding results are summarized in Table 2.
表２から分かるように、磁束密度が０．００４、０．０１５であり、印加電圧が＋１０、＋５０、＋１００の場合、型と成形された光学素子との間の離型性は『良好』であり、融着不良、成膜剥れ不良の無いプレス成形を行うことができた。またこのときの膜厚は、型の頂点部での膜厚に対する型開角５５度での膜厚の比率は０．８〜１．０の範囲であった。また、同計測位置での膜の抵抗値を測定した結果、頂点部にて１０１０．８〜１０１２．５Ω・ｃｍ、型開角５５度部にて１０９．５〜１０１１．７Ω・ｃｍであり、膜厚、膜質ともに均一なものであった。 As can be seen from Table 2, when the magnetic flux density is 0.004, 0.015 and the applied voltage is +10, +50, +100, the releasability between the mold and the molded optical element is “good”. Yes, it was possible to carry out press molding without fusing defects and film formation peeling defects. Moreover, the ratio of the film thickness at the mold opening angle of 55 degrees to the film thickness at the apex portion of the mold was in the range of 0.8 to 1.0. Moreover, as a result of measuring the resistance value of the film at the same measurement position, 10 10.8 to 10 12.5 Ω · cm at the apex portion, and 10 9.5 to 10 11.7 at the mold opening angle 55 ° portion. It was Ω · cm, and both the film thickness and film quality were uniform.
磁束密度が−０．００３、＋０．００３、＋０．０１６であり、印加電圧が＋１０、＋５０、＋１００の場合は、成形時に離型不良現象がみられ、型とガラスの融着現象を含む型の膜耐久は５００ショット以下であった。このとき型の周辺部ではｔａＣ膜の剥離が一部発生した。同様に、磁束密度が０．００４、＋０．０１５であり、印加電圧が−１０、±０、＋１０５の場合も、同様に成形時に離型不良現象がみられ、型とガラスの融着現象を含む型の膜耐久は５００ショット以下であった。このとき型の周辺部ではｔａＣ膜の剥離が一部発生した。 When the magnetic flux density is -0.003, +0.003, +0.016, and the applied voltage is +10, +50, +100, a mold release failure phenomenon is observed at the time of molding, and a mold including a mold-glass fusion phenomenon The film durability was 500 shots or less. At this time, part of the taC film peeled off at the periphery of the mold. Similarly, when the magnetic flux density is 0.004 and +0.015 and the applied voltage is −10, ± 0, and +105, a demolding failure phenomenon is similarly observed during molding, and the mold and glass are fused. The film durability of the included mold was 500 shots or less. At this time, part of the taC film peeled off at the periphery of the mold.
また、磁束密度が−０．００３、＋０．００３、＋０．０１６であり、印加電圧が−１０、±０、＋１０５の場合は、十分な成膜を行うことができず、プレス成形を行うことができなかった。 In addition, when the magnetic flux density is −0.003, +0.003, +0.016 and the applied voltage is −10, ± 0, +105, sufficient film formation cannot be performed, and press molding is performed. I could not.
（実施例５）
光学素子成形用型３（凸形状で開角は４５度）と成形用型保持具２を絶縁状態にし、実施例１と同様にしてｔａＣ膜を成膜した。中間層としてのＳｉＣ膜は、実施例１と同様スパッタ装置を用いて６０ｎｍ成膜した。また実施例４と同様にしてガラス成形テストを行い型の膜評価を行なった。その結果を表３に示す。
(Example 5)
The optical element molding die 3 (convex shape with an opening angle of 45 degrees) and the molding die holder 2 were insulated, and a taC film was formed in the same manner as in Example 1. The SiC film as the intermediate layer was formed to a thickness of 60 nm using a sputtering apparatus as in Example 1. Further, a glass molding test was conducted in the same manner as in Example 4 to evaluate the film of the mold. The results are shown in Table 3.
表２から分かるように、磁束密度が０．００３、０．００４であり、印加電圧が＋１０、＋５０、＋１００、＋１０５の場合、型と成形された光学素子との間の離型性は（良好）であり、融着不良、成膜剥れ不良の無いプレス成形を行うことができた。また磁束密度が０．０１５であり、印加電圧が＋１０、＋５０、＋１００の場合、型と成形された光学素子との間の離型性は『良好』であり、融着不良、成膜剥れ不良の無いプレス成形を行うことができた。 As can be seen from Table 2, when the magnetic flux density is 0.003 and 0.004 and the applied voltage is +10, +50, +100, and +105, the releasability between the mold and the molded optical element is (good) It was possible to perform press molding without fusing defects and film peeling defects. In addition, when the magnetic flux density is 0.015 and the applied voltage is +10, +50, +100, the releasability between the mold and the molded optical element is “good”, poor fusion, and film peeling. It was possible to perform press molding without defects.
また、上記以外の条件で成膜した場合、型とガラスの融着現象を含む型の膜耐久は５００ショット以下であった。このとき型の周辺部ではｔａＣ膜の剥離が一部発生した。 Further, when the film was formed under conditions other than the above, the film durability of the mold including the fusion phenomenon between the mold and the glass was 500 shots or less. At this time, part of the taC film peeled off at the periphery of the mold.
１ 真空チャンバー
２ 成形用型保持具
３ 光学素子成形用型
４ 磁石
５ リング状磁石
６ バキュームアーク電源
７ アークプラズマ生成室
８ フィルターコイル
１０ スキャニングコイル
１１ 型母材
１２ ＳｉＣ膜
１３ ｔａＣ膜
１４ 開口部
１７ 中心軸
DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Mold holder 3 Optical element shaping mold 4 Magnet 5 Ring magnet 6 Vacuum arc power supply 7 Arc plasma generation chamber 8 Filter coil 10 Scanning coil 11 Mold base material 12 SiC film 13 taC film 14 Opening 17 Central axis
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| JP2004537825A (en) * | 2001-04-20 | 2004-12-16 | アプライド・プロセス・テクノロジーズ | Magnetic mirror plasma source |
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