JP2012208137A - 光インターコネクトモジュールおよび光電気ハイブリッド混載ボード - Google Patents
光インターコネクトモジュールおよび光電気ハイブリッド混載ボード Download PDFInfo
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- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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Abstract
【解決手段】レーザ光源素子101から発光された後、変調器素子部102内を伝播し光路変換構造によって基板垂直方向に折り曲げられた光信号と、半導体基板外部から入射され、半導体同一基板上に設けられた受光素子部103との間でやりとりされる光信号が、それぞれ半導体基板100内を介して、半導体基板外部との間で基板垂直方向に光学接続される構造の光インターコネクトモジュールとする。
【選択図】図2
Description
101,101a,101b…レーザ光源素子、
102,102a,102b…変調器素子部、
102’… 変調器素子部を構成する材料層,
103,103a,103b…受光素子部、
104A…光素子駆動回路、
104…ドライバ回路、
105a,105b…光信号
106…酸化ケイ素層、
107…光インターコネクトモジュール、
108…電気配線層、
109a,109b,109c,109d,114…光路変換ミラー、
110a,110b…配線コア、
111…クラッド層、
112…基板、
113a,113b…レンズ、
114…光路変換部、
115…トランスインピーダンス増幅回路、
116a,116b…バイアス電源ライン、
117a,117b,117c,117d…高周波電気線路、
130…光導波路カプラ、
300…Siウェハ、
500a,500b,500c,500d,500e,500f…ビア、
501,501a,501b…LSI、
502a,502b…バンプ、
504,504a,504b…インターポーザ基板。
Claims (14)
- 半導体基板上に搭載された光を放出する光源素子と、
前記半導体基板に集積された該光を前記半導体基板表面に対して水平方向に導波する導波路と該導波路を通過した光を前記水平方向と異なる方向に進路を変換する光路変換手段とを含む変調器素子部と、前記半導体基板外部より入射する光を受光する受光素子と、前記受光素子を含む光素子を駆動する光素子駆動回路とを有し、
前記光路変換手段を通過した光は、前記半導体基板の一主面から入射し、前記半導体基板内を通過し、前記一主面に対向する他の主面から前記半導体基板外部に出射されることを特徴とする光インターコネクトモジュール。 - 前記半導体基板は、シリコン材料で構成され、前記光源素子は、化合物半導体に形成されたレーザ光源素子であり、前記光源素子から発振される光の波長が1μm以上であることを特徴とする請求項1に記載の光インターコネクトモジュール。
- 前記光路変換手段を通過し、光路変換された光が進行する方向と前記半導体基板の他の主面とが交差する位置を含む領域に設けられたレンズ機能を有する第1の構造体と、
前記半導体基板外部より進入し前記受光素子に入射する光が進む方向と前記半導体基板の他の主面とが交差する位置を含む領域に設けられたレンズ機能を有する第2の構造体とを設けたことを特徴とする請求項1に記載の光インターコネクトモジュール。 - 前記光路変換手段は、前記導波路の一端を35〜55度の角度を有するテーパ加工して得られる構造を有することを特徴とする請求項1に記載の光インターコネクトモジュール。
- 前記受光素子部は、受光部にゲルマニウム材料を用いることを特徴とする請求項1に記載の光インターコネクトモジュール。
- 前記光素子駆動回路は、前記変調器素子部を駆動するドライバ回路と、前記受光素子からの出力電気信号を増幅するトランスインピーダンス増幅回路を含むことを特徴とする請求項2に記載の光インターコネクトモジュール。
- 前記レーザ光源素子と、前記変調器素子部と、前記受光素子部と、前記光素子駆動回路とが、前記半導体基板上にそれぞれ2チャンネル以上のアレイをなすように配置され、
前記変調器素子部で構成された変調器素子部アレイと前記受光素子部で構成された受光素子アレイとが前記半導体基板上で対向するように配置され、
前記変調器素子部アレイと前記受光素子アレイとの間に、前記変調器素子部を駆動するドライバ回路と前記トランスインピーダンス回路がそれぞれ載置されていることを特徴とする請求項6に記載の光インターコネクトモジュール。 - 前記半導体基板上に変調器素子部と、前記受光素子部と、前記光素子駆動回路とがそれぞれ2チャンネル以上のアレイをなすように配置され、
前記レーザ光源素子一つに対して前記変調器素子部がN個(N≧2)からなるアレイを有し、
前記レーザ光源素子から放出される光を1:N(Nは、2以上の自然数)に分岐する分岐構造を有する光導波路を介して光学的に接続されていることを特徴とする請求項6に記載の光インターコネクトモジュール。 - 請求項2に記載の光インターコネクトモジュールが搭載された光電気ハイブリッド混載ボードであって、
基板上に設けられたクラッド層と、該クラッド層よりも屈折率の高い材料で囲まれてなる配線コアと、該配線コアの端部に光路変換ミラー構造を具備する光導波路を具備した光配線基板を有し、
前記光インターコネクトモジュールは前記光配線基板上に実装され、
前記光インターコネクトモジュールに設けられたレーザ素子および外部変調器と前記光導波路、または前記光導波路と受光素子部との間でやりとりされる信号が、シリコン基板を介して基板垂直方向で光学的に接続された光電気ハイブリッド混載ボード。 - 前記光導波路は、ポリマ材料で形成されていることを特徴とする請求項9に記載の光電気ハイブリッド混載ボード。
- 前記光導波路を少なくとも2層以上有し、前記光インターコネクトモジュールと光学的に接続された前記光配線基板において、
前記変調器素子部と光学的に接続された第1の光導波路と、前記受光素子部と光学的に接続された第2の光導波路とが、それぞれ異なる層に形成されていることを特徴とする請求項9に記載の光電気ハイブリッド混載ボード。 - 前記光インターコネクトモジュール上に電気ビアを具備したインターポーザ基板が設けられ、
該インターポーザ基板上にLSI回路が載置され、
前記光インターコネクトモジュールに集積された前記変調器素子部、受光素子部、または前記駆動回路と前記LSI回路とが前記インターポーザ基板を介して電気的に接続されていることを特徴とする請求項9に記載の光電気ハイブリッド混載ボード。 - 前記インターポーザ基板は、セラミックまたは半導体材料によって形成されていることを特徴とする請求項12に記載の光電気ハイブリッド混載ボード。
- 前記光インターコネクトモジュールに集積されたレーザ光源素子にバイアスを供給する第1の電気配線の引き出し方向と、
前記変調器素子部を駆動するために設けられた第2の電気配線の引き出し方向とは、互いに異なる方向に配線され、
前記第1の電気配線は、前記インターポーザ基板を介して前記光配線基板上と電気的に接続されていることを特徴とする請求項12に記載の光電気ハイブリッド混載ボード。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011071261A JP5568044B2 (ja) | 2011-03-29 | 2011-03-29 | 光インターコネクトモジュールおよび光電気ハイブリッド混載ボード |
US13/370,773 US20120251033A1 (en) | 2011-03-29 | 2012-02-10 | Optical interconnection module and optical-electrical hybrid board |
US14/588,432 US9379276B2 (en) | 2011-03-29 | 2015-01-01 | Optical interconnection module and optical-electrical hybrid board |
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US9379276B2 (en) | 2016-06-28 |
US20120251033A1 (en) | 2012-10-04 |
US20150155423A1 (en) | 2015-06-04 |
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