JP2012204367A - 基板処理方法及び記憶媒体 - Google Patents
基板処理方法及び記憶媒体 Download PDFInfo
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- JP2012204367A JP2012204367A JP2011064496A JP2011064496A JP2012204367A JP 2012204367 A JP2012204367 A JP 2012204367A JP 2011064496 A JP2011064496 A JP 2011064496A JP 2011064496 A JP2011064496 A JP 2011064496A JP 2012204367 A JP2012204367 A JP 2012204367A
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000003672 processing method Methods 0.000 title claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 87
- 238000005530 etching Methods 0.000 claims abstract description 74
- 238000012545 processing Methods 0.000 claims abstract description 70
- 238000004380 ashing Methods 0.000 claims abstract description 34
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 19
- 239000004215 Carbon black (E152) Substances 0.000 claims description 15
- 229930195733 hydrocarbon Natural products 0.000 claims description 15
- 150000002430 hydrocarbons Chemical class 0.000 claims description 15
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 24
- -1 for example Inorganic materials 0.000 description 21
- 229910052731 fluorine Inorganic materials 0.000 description 13
- 239000011737 fluorine Substances 0.000 description 13
- 230000006870 function Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- LMHDQOWNISVSPD-UHFFFAOYSA-N fluorine(1+) Chemical compound [F+] LMHDQOWNISVSPD-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000001723 carbon free-radicals Chemical class 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】開口部39を有するシリコンからなるハードマスク膜38を用いてウエハWに形成された酸化膜36をエッチングして該酸化膜36に高アスペクト比のホール46を形成する際に、C4F6ガス及びメタンガスを含む処理ガスから生成されたプラズマで開口部39に対応する酸化膜36をエッチングし、次いで、酸素ガスを含む処理ガスから生成されたプラズマで上記エッチングにおいて生成され且つ酸化膜36のホール46の内面に堆積した反応性生成物45をアッシングし、上記エッチング及び上記アッシングをこの順で繰り返す。
【選択図】図3
Description
10 基板処理装置
36 酸化膜
38 ハードマスク膜
39 開口部
41a フッ素陽イオン
41b フッ素ラジカル
42 炭素ラジカル
43 水素ラジカル
44,45 反応性生成物
46 ホール
47 酸素ラジカル
Claims (6)
- 開口部を有するシリコンからなるマスク膜を用いてウエハに形成された酸化膜をエッチングして該酸化膜に高アスペクト比のホール又はトレンチを形成する基板処理方法であって、
フルオロカーボンガスを含む処理ガスから生成されたプラズマで前記開口部に対応する酸化膜をエッチングするメインエッチングステップと、
酸素ガスを含む処理ガスから生成されたプラズマで前記メインエッチングにおいて生成された反応性生成物をアッシングするアッシングステップとを有し、
前記メインエッチングステップ及び前記アッシングステップをこの順で繰り返すことを特徴とする基板処理方法。 - 前記メインエッチングステップにおいて、前記処理ガスはさらに炭化水素ガスを含むことを特徴とする請求項1記載の基板処理方法。
- 前記処理ガスにおける前記炭化水素ガスの流量は前記フルオロカーボンガスの流量の20%以下であることを特徴とする請求項2記載の基板処理方法。
- 前記炭化水素はメタンであることを特徴とする請求項2又は3記載の基板処理方法。
- 前記メインエッチングステップの継続時間は15〜30秒であり、前記アッシングステップの継続時間は3〜5秒であることを特徴とする請求項1〜4のいずれか1項に記載の基板処理方法。
- 開口部を有するシリコンからなるマスク膜を用いてウエハに形成された酸化膜をエッチングして該酸化膜に高アスペクト比のホール又はトレンチを形成する基板処理方法をコンピュータに実行させるプログラムを格納するコンピュータで読み取り可能な記憶媒体であって、前記基板処理方法は、
フルオロカーボンガスを含む処理ガスから生成されたプラズマで前記開口部に対応する酸化膜をエッチングするメインエッチングステップと、
酸素ガスを含む処理ガスから生成されたプラズマで前記メインエッチングにおいて生成された反応性生成物をアッシングするアッシングステップとを有し、
前記メインエッチングステップ及び前記アッシングステップをこの順で繰り返すことを特徴とする記憶媒体。
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JP2011064496A JP5701654B2 (ja) | 2011-03-23 | 2011-03-23 | 基板処理方法 |
US13/428,212 US9165784B2 (en) | 2011-03-23 | 2012-03-23 | Substrate processing method and storage medium |
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JP2011064496A JP5701654B2 (ja) | 2011-03-23 | 2011-03-23 | 基板処理方法 |
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JP5701654B2 JP5701654B2 (ja) | 2015-04-15 |
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JP (1) | JP5701654B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015043386A (ja) * | 2013-08-26 | 2015-03-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
KR20150069514A (ko) * | 2013-12-13 | 2015-06-23 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
JP2016136616A (ja) * | 2015-01-16 | 2016-07-28 | 東京エレクトロン株式会社 | エッチング方法 |
JP2017011167A (ja) * | 2015-06-24 | 2017-01-12 | 東京エレクトロン株式会社 | エッチング方法 |
KR20180138528A (ko) * | 2017-06-21 | 2018-12-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102099408B1 (ko) * | 2012-09-18 | 2020-04-10 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 |
US20150357200A1 (en) * | 2012-12-27 | 2015-12-10 | Zeon Corporation | Dry etching method |
JP6601257B2 (ja) * | 2016-02-19 | 2019-11-06 | 東京エレクトロン株式会社 | 基板処理方法 |
CN105679664B (zh) * | 2016-03-18 | 2018-07-13 | 武汉华星光电技术有限公司 | 平坦化层去残留的方法 |
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JPH10261713A (ja) * | 1997-03-19 | 1998-09-29 | Sony Corp | 半導体装置の製造方法 |
JP2005251814A (ja) * | 2004-03-02 | 2005-09-15 | Ulvac Japan Ltd | 層間絶縁膜のドライエッチング方法及びその装置 |
JP2009206401A (ja) * | 2008-02-29 | 2009-09-10 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
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US6451705B1 (en) * | 2000-08-31 | 2002-09-17 | Micron Technology, Inc. | Self-aligned PECVD etch mask |
US6376366B1 (en) * | 2001-05-21 | 2002-04-23 | Taiwan Semiconductor Manufacturing Company | Partial hard mask open process for hard mask dual damascene etch |
US7977390B2 (en) * | 2002-10-11 | 2011-07-12 | Lam Research Corporation | Method for plasma etching performance enhancement |
US7569478B2 (en) * | 2005-08-25 | 2009-08-04 | Tokyo Electron Limited | Method and apparatus for manufacturing semiconductor device, control program and computer storage medium |
US7981812B2 (en) * | 2007-07-08 | 2011-07-19 | Applied Materials, Inc. | Methods for forming ultra thin structures on a substrate |
JP4978512B2 (ja) | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | プラズマエッチング方法 |
JP5260356B2 (ja) * | 2009-03-05 | 2013-08-14 | 東京エレクトロン株式会社 | 基板処理方法 |
-
2011
- 2011-03-23 JP JP2011064496A patent/JP5701654B2/ja active Active
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2012
- 2012-03-23 US US13/428,212 patent/US9165784B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10261713A (ja) * | 1997-03-19 | 1998-09-29 | Sony Corp | 半導体装置の製造方法 |
JP2005251814A (ja) * | 2004-03-02 | 2005-09-15 | Ulvac Japan Ltd | 層間絶縁膜のドライエッチング方法及びその装置 |
JP2009206401A (ja) * | 2008-02-29 | 2009-09-10 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015043386A (ja) * | 2013-08-26 | 2015-03-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
KR20150024277A (ko) * | 2013-08-26 | 2015-03-06 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 |
KR102260339B1 (ko) | 2013-08-26 | 2021-06-03 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 |
KR20150069514A (ko) * | 2013-12-13 | 2015-06-23 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
KR102307417B1 (ko) | 2013-12-13 | 2021-09-29 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
JP2016136616A (ja) * | 2015-01-16 | 2016-07-28 | 東京エレクトロン株式会社 | エッチング方法 |
JP2017011167A (ja) * | 2015-06-24 | 2017-01-12 | 東京エレクトロン株式会社 | エッチング方法 |
KR20180138528A (ko) * | 2017-06-21 | 2018-12-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
JP2019009189A (ja) * | 2017-06-21 | 2019-01-17 | 東京エレクトロン株式会社 | エッチング方法 |
KR102557053B1 (ko) | 2017-06-21 | 2023-07-18 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
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US9165784B2 (en) | 2015-10-20 |
JP5701654B2 (ja) | 2015-04-15 |
US20120244718A1 (en) | 2012-09-27 |
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