JP2012195590A - クリーニング調合物およびそのクリーニング調合物の使用方法 - Google Patents
クリーニング調合物およびそのクリーニング調合物の使用方法 Download PDFInfo
- Publication number
- JP2012195590A JP2012195590A JP2012059809A JP2012059809A JP2012195590A JP 2012195590 A JP2012195590 A JP 2012195590A JP 2012059809 A JP2012059809 A JP 2012059809A JP 2012059809 A JP2012059809 A JP 2012059809A JP 2012195590 A JP2012195590 A JP 2012195590A
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- Prior art keywords
- water
- composition
- mixtures
- group
- corrosion inhibitor
- Prior art date
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- Granted
Links
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- 238000004140 cleaning Methods 0.000 title claims abstract description 70
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- 239000000758 substrate Substances 0.000 claims abstract description 72
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- 238000005260 corrosion Methods 0.000 claims abstract description 43
- 239000003112 inhibitor Substances 0.000 claims abstract description 39
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- PMZDQRJGMBOQBF-UHFFFAOYSA-N quinolin-4-ol Chemical compound C1=CC=C2C(O)=CC=NC2=C1 PMZDQRJGMBOQBF-UHFFFAOYSA-N 0.000 claims description 2
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- 239000011976 maleic acid Substances 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 231100000647 material safety data sheet Toxicity 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical class NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229940075579 propyl gallate Drugs 0.000 description 1
- 239000000473 propyl gallate Substances 0.000 description 1
- 235000010388 propyl gallate Nutrition 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002265 redox agent Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000048 toxicity data Toxicity 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/2034—Monohydric alcohols aromatic
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- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2041—Dihydric alcohols
- C11D3/2058—Dihydric alcohols aromatic
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- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
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Abstract
【解決手段】A半導体基材がアルミニウムを含む用途におけるフォトレジストおよびエッチング後/アッシング後残留物除去のための水に富んだヒドロキシルアミン調合物。クリーニング組成物は、約2〜約15wt%のヒドロキシルアミン;約50〜約80wt%の水;約0.01〜約5.0wt%の腐食防止剤;約5〜約45wt%の、:pKa<9.0を有するアルカノールアミン、水混和性溶媒、およびそれらの混合物からなる群から選択される成分を含む。そうした組成物の使用は、一方で両方の材料を含む基材でアルミニウムを保護しながら、Al基材での効率的なクリーニング能力、最小限のケイ素エッチングを示す。
【選択図】なし
Description
本例の主題であるすべての組成物を、1インチ(2.5cm)のテフロン(商標)被覆攪拌棒を有する600mLビーカー中で500gの材料を混合することによって、調製した。液体成分を、固体成分の前の任意の順番で加えることができる。
本例で使用された基材は、Al金属線および/またはAlビアであった。Al金属線基材は、TiN/Al/TiN/Ti冶金からなり、そして反応性イオンエッチング(RIE)により、パターン化され、そしてエッチングされた。フォトレジストは、酸素プラズマアッシングにより除去された。アッシング工程後の金属線基材上に有機金属残留物が残っていた。酸化ケイ素誘電体層中に0.45ミクロンのビア開口を有する1つのAlビア基材を、酸素プラズマアッシングなしの酸化ケイ素プラズマエッチングプロセスを使用してエッチングした。バルクのフォトレジスト層が酸化ケイ素の上に残った。酸化ケイ素誘電体層中に1μmまたは0.45μmのビア開口を有する他のAlビア基材を、酸化ケイ素プラズマエッチングプロセスを使用してエッチングし、そして酸素プラズマアッシング工程を使用してアッシングし;残留物が側壁およびビアの上/底上に残った。
クリーニング試験を、600回転/分に設定された1/2インチ(1.3cm)丸テフロン(商標)攪拌棒を有する400mLビーカー中で300mLのクリーニング組成物を使用して行った。クリーニング組成物を、必要な場合、ホットプレート上で所望の温度に加熱した。サイズ約1/2インチ×1/2インチ(1.3cm×1.3cm)のウェハーセグメントを、所望の温度で所望の時間の間、組成物中に浸した。
ブランケットAlウェハーのきれいなクーポン(coupon)について、Creative Design 、Engineering Inc.(Long Island City、NY)からのResMap(商標)モデル273抵抗率測定器を用いて層の抵抗率を測定することによって、金属層の厚さを測定した。次にこのクーポンを60℃で(または表に示された温度で)かつ5、10、20、40および60分で、組成物中に浸し、クーポンを組成物から除去し、脱イオン化水ですすぎ、そして乾燥し、そして金属層の厚さを再び測定した。(明確にするために、5分でこのクーポンを組成物から取り出し、すすぎ、乾燥しそして測定し、次に、さらに5分間組成物中に戻して置き(10分において)組成物から取り出し、すすぎ、乾燥しそして測定した、そして次にさらに10分間組成物中に戻して置き、(20分において)組成物から取り出し、すすぎ、乾燥し、そして測定した)。測定を行った時の時間は、組成物中にクーポンを浸した全時間を表す。浸漬時間の関数としての厚さにおける変化のグラフを作り、そして曲線の勾配から、オングストローム/分でのエッチング速度を決定した。
表1は、水に富んだヒドロキシルアミン調合物である、例1Aおよび2D、2E、2F、2G、49A、49Bおよび49Cの組成物を示す。これらの組成物における唯一の違いは、異なるアルカノールアミンが使用されたことである。アルカノールアミンTEA、DEA、DIPA、NDEAを有する組成物が、驚くほど最小のSiエッチングを有することを見ることができる。他の普通使用されるアルカノールアミン、すなわち、MIPA、MEA、NMEAおよびAEEを有する組成物は、非常に高いSiエッチング速度を有する。TEA、DEA、DIPA、NDEAのpKaは、9未満であり。MIPA、MEA、NMEAおよびAEEのpKaは、9超である。これらの結果は、水に富んだヒドロキシルアミンおよびアルカノールアミンを含有する組成物において、pKa<9を有するアルカノールアミンを用いることが、ケイ素基材を保護するであろうことを明確に示す。
データソース:Handbook of Chemistry and Physics、 81st edition;Lange’s Handbook of Chemistry、fifteenth edition; Huntsman Technical bulletin;Ind.Eng.Chem.Res.2003、42、4414〜4412
MIPA:イソプロパノールアミン
TEA:トリエタノールアミン
MEA:モノエタノールアミン
NMEA:N−メチルエタノールアミン
AEE:アミノエトキシエタノール
DEA:ジエタノールアミン
DIPA:ジイソプロパノールアミン
NDEA:N−メチルジエタノールアミン
tBC:t−ブチルカテコール
PG:プロピレングリコール
Claims (25)
- 約2〜約15wt%のヒドロキシルアミンと、
約50〜約80wt%の水と、
約0.01〜約5.0wt%の腐食防止剤と、
約5〜約45wt%の、それぞれpKa<9.0を有する1種または2種以上のアルカノールアミン、1種または2種以上の水混和性溶媒、およびそれらの混合物からなる群から選択される成分と、
を含んで成る、半導体から残留物を除去するのに有用な組成物。 - 約2〜約10wt%のヒドロキシルアミンと、
約55〜約80wt%の水と、
約0.01〜約5.0wt%の腐食防止剤と、
約5〜約42wt%の、それぞれpKa<9.0を有する1種または2種以上のアルカノールアミン、1種または2種以上の水混和性溶媒、およびそれらの混合物からなる群から選択される成分と、
を含んで成る、半導体から残留物を除去するのに有用な組成物。 - 該アルカノールアミンが、トリエタノールアミン、ジエタノールアミン、ジイソプロパノールアミン、N−メチルジエタノールアミン、およびそれらの混合物からなる群から選択される、請求項1に記載の組成物。
- 該アルカノールアミンが、トリエタノールアミンである、請求項3に記載の組成物。
- 該腐食防止剤が、1種または2種以上の直鎖または分枝鎖のC1〜C6アルキルジヒドロキシベンゼン、1種または2種以上のヒドロキシキノリン、およびそれらの混合物からなる群から選択される、請求項1に記載の組成物。
- 該腐食防止剤が、tert−ブチルカテコール、カテコール、没食子酸、2、3−ジヒドロキシナフタレン、2、3−ジヒドロキシテトラリン、およびそれらの混合物からなる群から選択される、請求項5に記載の組成物。
- 該腐食防止剤が、tert−ブチルカテコールである、請求項6に記載の組成物。
- 水混和性有機溶媒が、該組成物中に存在する、請求項1に記載の組成物。
- 該水混和性有機溶媒が、エチレングリコール、プロピレングリコール、ベンジルアルコール、ジメチルスルホキシド、ジメチル尿素、グリセロール、ジプロピレングリコールモノメチルエーテル、n−メチルピロリドン、テトラヒドロフルフラールアルコール、テトラメトキシエタン、およびそれらの混合物からなる群から選択される、請求項8に記載の組成物。
- 該水混和性有機溶媒が、プロピレングリコールである、請求項1に記載の組成物。
- 約4〜約10wt%の該ヒドロキシルアミンと、
約60〜約80wt%の該水と、
約0.1〜約5.0wt%の該腐食防止剤と、
約10〜約25wt%の該水混和性溶媒と、
約0〜約30wt%の該pKa<9.0を有するアルカノールアミンとからなる、請求項1に記載の組成物。 - 該アルカノールアミンが、トリエタノールアミン、ジエタノールアミン、ジイソプロパノールアミン、N−メチルジエタノールアミン、およびそれらの混合物からなる群から選択される、請求項11に記載の組成物。
- 該アルカノールアミンが、トリエタノールアミンである、請求項12に記載の組成物。
- 該腐食防止剤が、tert−ブチルカテコール、カテコール、没食子酸、2、3−ジヒドロキシナフタレン、2、3−ジヒドロキシテトラリン、およびそれらの混合物からなる群から選択される、請求項11に記載の組成物。
- 該腐食防止剤が、tert−ブチルカテコールである、請求項14に記載の組成物。
- アルミニウムおよびケイ素を含む基材から残留物を除去するための方法であって、該方法が、
約2〜約10wt%のヒドロキシルアミンと、
約55〜約80wt%の水と、
約0.01〜約5.0wt%の腐食防止剤と、
約5〜約42wt%の、pKa<9.0を有するアルカノールアミン、水混和性溶媒、およびそれらの混合物からなる群から選択される成分と、
を含むクリーニング組成物と、該基材とを接触させる工程と、
該基材を水ですすぐ工程と、
該基材を乾燥する工程の各ステップを含み、
該方法が、該基材を水ですすぐステップの前に、中間IPA(イソプロピルアルコール)すすぎステップを含まない、方法。 - 該基材が、半導体基材であり、該組成物が、約2〜約10wt%の該ヒドロキシルアミンと、約55〜約80wt%の該水と、5〜約42wt%の、pKa<9.0を有するアルカノールアミン、水混和性溶媒、およびそれらの混合物からなる群から選択される該成分とを含み、そしてこの方法での該ケイ素のエッチング速度が20Å/分未満である、請求項16に記載の方法。
- 該アルカノールアミンが、トリエタノールアミン、ジエタノールアミン、ジイソプロパノールアミン、N−メチルジエタノールアミン、およびそれらの混合物からなる群から選択される、請求項17に記載の方法。
- 該アルカノールアミンが、トリエタノールアミンである、請求項18に記載の方法。
- 該腐食防止剤が、直鎖または分枝鎖のC1〜C6アルキルジヒドロキシベンゼン、ヒドロキノリン、およびそれらの混合物からなる群から選択される、請求項16に記載の方法。
- 該腐食防止剤が、2−ヒドロキシキノリン、4−ヒドロキシキノリン、6−ヒドロキシキノリン、8−ヒドロキシキノリン、およびそれらの混合物からなる群から選択される、請求項16に記載の方法。
- 該腐食防止剤が、tert−ブチルカテコール、カテコール、没食子酸、2、3−ジヒドロキシナフタレン、2、3−ジヒドロキシテトラリン、およびそれらの混合物からなる群から選択される、請求項16に記載の方法。
- 該腐食防止剤が、tert−ブチルカテコールである、請求項22に記載の方法。
- 該水混和性有機溶媒が、エチレングリコール、プロピレングリコール、ベンジルアルコール、ジメチルスルホキシド、ジメチル尿素、グリセロール、ジプロピレングリコールモノメチルエーテル、n−メチルピロリドン、テトラヒドロフルフラールアルコール、テトラメトキシエタン、およびそれらの混合物からなる群から選択される、請求項16に記載の方法。
- 該水混和性有機溶媒が、プロピレングリコールである、請求項24に記載の方法。
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Publication number | Publication date |
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EP2500407B1 (en) | 2017-07-19 |
KR101535283B1 (ko) | 2015-07-08 |
JP5662365B2 (ja) | 2015-01-28 |
KR20120106928A (ko) | 2012-09-27 |
CN102732393B (zh) | 2014-12-17 |
US8889609B2 (en) | 2014-11-18 |
SG184669A1 (en) | 2012-10-30 |
CN102732393A (zh) | 2012-10-17 |
TW201239085A (en) | 2012-10-01 |
EP2500407A1 (en) | 2012-09-19 |
US20130061882A1 (en) | 2013-03-14 |
TWI454573B (zh) | 2014-10-01 |
MY162416A (en) | 2017-06-15 |
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