JP2012146984A - 分極層を備える磁気トンネル接合 - Google Patents
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 59
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 79
- 230000005415 magnetization Effects 0.000 claims abstract description 69
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims description 45
- 230000010287 polarization Effects 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000005641 tunneling Effects 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- 239000000395 magnesium oxide Substances 0.000 description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
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- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
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- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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Abstract
【解決手段】 本発明は、一定の向きの第1磁化を有する第1強磁性層と自由に偏向可能な第2磁化を有する第2強磁性層との間にあるトンネル障壁層と、第1磁化及び第2磁化にほぼ垂直な磁化極性を有する分極層とを備える磁気トンネル接合を備えるメモリ素子であって、第1及び第2強磁性層が、磁気トンネル接合のトンネル磁気抵抗が約150%以上になるようにアニールされるメモリ装置に関する。さらに、本発明は、当該MRAMセルを製造する方法に関する。
【選択図】 図1
Description
さらに、当該方法は、多層分極層60の界面での混合を最小限にすることを可能にする一方で、強磁性層21、23及びトンネル障壁層22が、予め設定された高い第1アニーリング温度でアニールされ、150%以上の高いトンネル磁気抵抗を可能にする。
2 磁気トンネル接合
21 第1強磁性層
211 第1磁化
22 トンネル障壁層
23 第2強磁性層
231 第2磁化
3 選択トランジスタ
30 前端層
32 スピン分極電流
50 第1導電線、第1電極
51 第2導電線、第2電極
60 分極層
600 磁化極性
61 金属分離層
Claims (8)
- スピン分極電流によって書き込まれる磁気トンネル接合を製造するための方法であって、前記磁気トンネル接合は、一定の向きの第1磁化を有する第1強磁性層と自由に偏向可能な第2磁化を有する第2強磁性層との間のトンネル障壁層、及び磁化極性を有する分極層を備える当該方法において、
この方法は、
前記第1強磁性層、前記トンネル障壁層及び前記第2強磁性層を堆積するステップと、
前記磁気トンネル接合のトンネル磁気抵抗が、約150%以上であるように、当該堆積された第1強磁性層及び第2強磁性層を第1アニーリング温度でアニールするステップと、
前記分極層を堆積するステップと、
前記磁化極性を前記第1磁化及び前記第2磁化に対してほぼ垂直に向けさせるため、当該堆積された分極層を第2アニーリング温度でアニールするステップとから成り、
当該堆積された第1強磁性層及び第2強磁性層の、前記第1アニーリング温度での当該アニーリングは、前記分極層を堆積する前に実施される方法。 - 前記第2アニーリング温度は、前記第1アニーリング温度より低い請求項1に記載の方法。
- 前記第1アニーリング温度は、約340℃〜360℃である請求項1に記載の方法。
- 予め設定された前記第2アニーリング温度は、約150℃〜250℃である請求項1に記載の方法。
- 前記第2強磁性層と前記トンネル障壁層と前記第1強磁性層とを堆積するステップは、この順番で実施される請求項1に記載の方法。
- 前記第1強磁性層と前記トンネル障壁層と前記第2強磁性層とを堆積するステップは、この順番で実施される請求項1に記載の方法。
- 磁気トンネル接合を備えるMRAMセルにおいて、
このMRAMセルは、一定の向きの第1磁化を有する第1強磁性層と自由に偏向可能な第2磁化を有する第2強磁性層との間のトンネル障壁層、並びに前記第1磁化及び前記第2磁化に対してほぼ垂直に向けさせる磁化極性を有する分極層を備え、
前記磁気トンネル接合のトンネル磁気抵抗が、約150%以上であるように、前記第1強磁性層及び第2強磁性層はアニールされるMRAMセル。 - 複数のMRAMセルを備える磁気メモリ装置において、
各MRAMセルは、一定の向きの第1磁化を有する第1強磁性層と自由に偏向可能な第2磁化を有する第2強磁性層との間のトンネル障壁層、並びに前記第1磁化及び前記第2磁化に対してほぼ垂直に向けさせる磁化極性を有する分極層を備え、
前記磁気トンネル接合のトンネル磁気抵抗が、約150%以上であるように、前記第1強磁性層及び第2強磁性層はアニールされる磁気メモリ装置。
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EP11290013.9 | 2011-01-13 | ||
EP11290013.9A EP2477227B1 (en) | 2011-01-13 | 2011-01-13 | Magnetic tunnel junction comprising a polarizing layer |
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EP (1) | EP2477227B1 (ja) |
JP (1) | JP5903278B2 (ja) |
KR (1) | KR20120082359A (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014183279A (ja) * | 2013-03-21 | 2014-09-29 | Tokyo Electron Ltd | 磁気アニール装置 |
JP2015525426A (ja) * | 2012-05-31 | 2015-09-03 | ノースロップ グラマン システムズ コーポレイションNorthrop Grumman Systems Corporation | ジョセフソン磁気メモリセルシステム |
US10297481B2 (en) | 2013-03-21 | 2019-05-21 | Tokyo Electron Limited | Magnetic annealing apparatus |
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Also Published As
Publication number | Publication date |
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EP2477227B1 (en) | 2019-03-27 |
US20120181642A1 (en) | 2012-07-19 |
RU2573756C2 (ru) | 2016-01-27 |
RU2012101118A (ru) | 2013-07-20 |
TWI535085B (zh) | 2016-05-21 |
TW201234691A (en) | 2012-08-16 |
KR20120082359A (ko) | 2012-07-23 |
US8609439B2 (en) | 2013-12-17 |
EP2477227A1 (en) | 2012-07-18 |
JP5903278B2 (ja) | 2016-04-13 |
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