JP2012136783A - 無電解めっき装置、無電解めっき方法およびコンピュータ読取可能な記憶媒体 - Google Patents
無電解めっき装置、無電解めっき方法およびコンピュータ読取可能な記憶媒体 Download PDFInfo
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- 230000007246 mechanism Effects 0.000 claims abstract description 70
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
- C23C18/163—Supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/168—Control of temperature, e.g. temperature of bath, substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
【解決手段】 基板Wを支持する基板支持部46と、基板Wの表面に供給されるめっき液を貯留するめっき液貯留部と、めっき液貯留部からのめっき液を、基板支持部46に支持された基板Wの表面に向けて供給するめっき液供給管と、めっき液供給管に設けられ、めっき液を基板Wの表面に吐出するめっき液吐出ノズルと、基板支持部46に支持された基板Wの裏面側に設けられ、基板Wの温度を制御するための基板温度制御部材48´と、基板温度制御部材48´と基板Wとの間に相対的な昇降移動を生じさせる移動機構とを具備し、基板温度制御部材48´は、移動機構により基板Wとの間の距離を調節することによって基板Wの温度を制御するように構成されている。
【選択図】 図13
Description
さらに、このような無電解めっき方法を実行することができる制御プログラムを記憶したコンピュータ読取可能な記憶媒体を提供することを目的とする。
図1は本発明の一実施形態に係る無電解めっき装置を搭載した無電解めっきシステムの概略構造を示す平面図、図2はその側面図、図3はその断面図である。
主ウエハ搬送機構18は、Z方向に延在する垂直壁27、28およびこれらの間の側面開口部29を有する筒状支持体30と、その内側に筒状支持体30に沿ってZ方向に昇降自在に設けられたウエハ搬送体31とを有している。筒状支持体30は、モータ32の回転駆動力によって回転可能であり、それに伴ってウエハ搬送体31も一体的に回転するように構成されている。
処理部2の天井には、各ユニットおよび主ウエハ搬送機構18に清浄な空気をダウンフローするためのフィルターファンユニット(FFU)26が設けられている。
図4は本実施形態に係る無電解めっき装置(無電解めっきユニット)12の概略平面図であり、図5はその概略断面図である。
図11は無電解めっきシステム1におけるウエハWの処理工程の概略を示すフローチャートであり、図12は無電解めっき装置12におけるウエハWの処理工程の概略を示すフローチャートである。
図14は、上記無電解めっきユニット(PW)の変形例を示す断面図である。図14に示す 無電解めっきユニット(PW)12′は、例えば、アウターチャンバ43内に、スピンチャック46に支持されたウエハW上と対向するトッププレート49を設けた構成を有している。トッププレート49は、枢軸100の下端に接続されており、モータ102によって回転可能となっている。枢軸100は、水平板101の下面に回転自在に支持され、水平板101は、アウターチャンバ43の上壁に固定されたエアシリンダ等からなる昇降機構103により昇降可能である。枢軸100およびトッププレート49には、スピンチャック46に支持されたウエハW上に純水を供給することができる純水供給孔105が設けられている。
46;スピンチャック(支持部)
48;アンダープレート(基板温調部材)
81;処理流体供給口
91;めっき液貯留タンク(めっき液貯留部)
94;加熱源
95;吸引機構
96;めっき液供給管
97;めっき液温調管
W;ウエハ(基板)
Claims (10)
- 基板の表面にめっき液を供給して無電解めっきを施す無電解めっき装置であって、
基板を支持する基板支持部と、
基板の表面に供給されるめっき液を貯留するめっき液貯留部と、
前記めっき液貯留部からのめっき液を、前記基板支持部に支持された基板の表面に向けて供給するめっき液供給管と、
前記めっき液供給管に設けられ、前記めっき液を基板の表面に吐出するめっき液吐出ノズルと、
前記基板支持部に支持された基板の裏面側に設けられ、基板の温度を制御するための基板温度制御部材と、
前記基板温度制御部材と基板との間に相対的な昇降移動を生じさせる移動機構と
を具備し、
前記基板温度制御部材は、前記移動機構により基板との間の距離を調節することによって基板の温度を制御するように構成されていることを特徴とする無電解めっき装置。 - 前記基板温度制御部材は、ヒータを内蔵し、輻射熱により基板を加熱して所定温度に制御することを特徴とする請求項1に記載の無電解めっき装置。
- 前記基板温度制御部材は、前記ヒータと、基板に加熱された流体を供給する流体供給口との両方を備えていることを特徴とする請求項2に記載の無電解めっき装置。
- 前記基板温度制御部材は、前記ヒータの輻射熱により基板を加熱し、その後、前記流体供給口から前記ヒータの輻射熱により加熱された基板に、前記加熱された流体を供給し、前記基板の温度をさらに上昇させることを特徴とする請求項3に記載の無電解めっき装置。
- 前記基板温度制御部材は、前記めっき液供給の開始時点の基板の温度よりも、前記めっき液の供給を停止した時点の基板の温度のほうが高くなるように基板の温度を制御することを特徴とする請求項1から請求項4のいずれか1項に記載の無電解めっき装置。
- 基板の表面へのめっき液の供給に先立って基板に所定の液を供給して前処理を行う前処理液供給機構と、基板の表面へのめっき液の供給の後に基板に所定の液を供給して後処理を行う後処理液供給機構をさらに具備することを特徴とする請求項1から請求項5のいずれか1項に記載の無電解めっき装置。
- めっき液貯留部に貯留されためっき液をめっき液供給管およびめっき液吐出ノズルを介して基板の表面に供給して無電解めっきを施す無電解めっき方法であって、
基板の裏面側に配置された基板温度制御部材と基板との間の距離を調整して基板の温度を制御する工程と、
前記めっき液供給管内を流通するめっき液を基板の表面に供給する工程と
を含むことを特徴とする無電解めっき方法。 - 前記めっき液供給の開始時点の基板の温度よりも、前記めっき液の供給を停止した時点の基板の温度のほうが高くなるように基板の温度を制御することを特徴とする請求項7に記載の無電解めっき方法。
- 基板の表面へのめっき液の供給に先立って基板の表面に所定の液を供給して前処理を行う工程と、基板の表面へのめっき液の供給の後に基板に所定の液を供給して後処理を行う工程とをさらに含むことを特徴とする請求項7または請求項8に記載の無電解めっき方法。
- 基板の表面にめっき液を供給して無電解めっきを施す無電解めっき装置をコンピュータに制御させる制御プログラムを記憶したコンピュータ読取可能な記憶媒体であって、
前記制御プログラムは、実行時に、請求項7から請求項9のいずれかの無電解めっき方法が行われるように、コンピュータに前記無電解めっき装置を制御させることを特徴とするコンピュータ読取可能な記憶媒体。
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Cited By (2)
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KR20180004002A (ko) | 2016-07-01 | 2018-01-10 | 도쿄엘렉트론가부시키가이샤 | 기판 액 처리 장치, 기판 액 처리 방법 및 기록 매체 |
KR20200094760A (ko) | 2017-12-01 | 2020-08-07 | 도쿄엘렉트론가부시키가이샤 | 기판 액 처리 장치 |
Families Citing this family (10)
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KR101123705B1 (ko) * | 2008-04-04 | 2012-03-15 | 도쿄엘렉트론가부시키가이샤 | 반도체 제조 장치, 반도체 제조 방법 |
JP4571208B2 (ja) * | 2008-07-18 | 2010-10-27 | 東京エレクトロン株式会社 | 半導体製造装置 |
JP5666419B2 (ja) * | 2011-11-28 | 2015-02-12 | 東京エレクトロン株式会社 | めっき処理装置、めっき処理方法および記憶媒体 |
JP2013249495A (ja) * | 2012-05-30 | 2013-12-12 | Tokyo Electron Ltd | めっき処理装置、めっき処理方法および記憶媒体 |
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KR102364189B1 (ko) | 2016-07-01 | 2022-02-17 | 도쿄엘렉트론가부시키가이샤 | 기판 액 처리 장치, 기판 액 처리 방법 및 기록 매체 |
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JP5466261B2 (ja) | 2014-04-09 |
KR20070058310A (ko) | 2007-06-08 |
US20070128373A1 (en) | 2007-06-07 |
TW200732508A (en) | 2007-09-01 |
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