JP2012134469A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2012134469A JP2012134469A JP2011255843A JP2011255843A JP2012134469A JP 2012134469 A JP2012134469 A JP 2012134469A JP 2011255843 A JP2011255843 A JP 2011255843A JP 2011255843 A JP2011255843 A JP 2011255843A JP 2012134469 A JP2012134469 A JP 2012134469A
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- oxide semiconductor
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- film
- semiconductor layer
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】意図的に窒素を酸化物半導体に対して添加することにより、六方晶であり、ウルツ鉱型結晶構造を有する酸化物半導体膜を形成する。酸化物半導体膜において、窒素を含む領域の結晶性は、窒素をあまり含まない領域、或いは窒素を意図的に添加していない領域に比べて高くなる。この結晶性の高いウルツ鉱型結晶構造を有する酸化物半導体膜をトランジスタのチャネル形成領域として用いる。
【選択図】図1
Description
本実施の形態では、図1(A)に示すボトムゲート型トランジスタの作製方法の一例を以下に示す。
実施の形態1ではボトムゲート型のトランジスタの例を示したが、本実施の形態では、図1(D)に示すトップゲート型のトランジスタの例を説明する。なお、図1(A)と同じ箇所には同じ符号を用いて説明する。
本実施の形態では、窒素濃度の異なる酸化物半導体膜の積層を有し、第1の酸化物半導体膜はウルツ鉱型の結晶を含み、第2の酸化物半導体膜もウルツ鉱型の結晶を含む積層構造を有する半導体膜について、図4乃至図7を参照して説明する。
はじめに、六方晶系の結晶構造について説明する。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置するトランジスタを有する表示装置を作製する例について以下に説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した表示装置を具備する電子機器の例について説明する。
101:下地絶縁層
102:酸化物半導体層
102a:窒素の高濃度領域
102b:窒素の低濃度領域
103:ソース電極層
104:ドレイン電極層
105:ゲート絶縁層
106:ゲート電極層
107:保護絶縁層
110:トランジスタ
111:トランジスタ
112:トランジスタ
113:トランジスタ
130:基板
132:半導体膜
132a:第1の酸化物半導体膜
132b:第2の酸化物半導体膜
3001 本体
3002 筐体
3003a 表示部
3003b 表示部
3004 キーボードボタン
5001 表示部
5002 ヒンジ
5003 表示パネル
5004 操作ボタン
5005 携帯電話機
5006 タッチ入力ボタン
7001 発光素子駆動用トランジスタ
7002 発光素子
7003 電極
7004 EL層
7005 電極
7008 電極
7009 隔壁
7010 基板
7011 発光素子駆動用トランジスタ
7012 発光素子
7014 EL層
7015 電極
7016 保護膜
7017 電極
7019 隔壁
7020 基板
7021 発光素子駆動用トランジスタ
7022 発光素子
7024 EL層
7025 電極
7027 電極
7029 隔壁
7030 ゲート絶縁層
7031 ゲート絶縁層
7032 絶縁層
7033 カラーフィルタ層
7034 オーバーコート層
7035 保護絶縁層
7040 ゲート絶縁層
7041 ゲート絶縁層
7042 絶縁層
7052 保護絶縁層
7053 平坦化絶縁層
7055 絶縁層
9600 テレビジョン装置
9601 筐体
9602 記憶媒体再生録画部
9603 表示部
9604 外部接続端子
9605 スタンド
9606 外部メモリ
Claims (12)
- ゲート電極層と、
該ゲート電極層と接する第1の絶縁層と、
該第1の絶縁層に接する酸化物半導体層と、
該酸化物半導体層に接する第2の絶縁層と、を有し、
前記酸化物半導体層は、ウルツ鉱型結晶構造を有し、且つ、前記第1の絶縁層に近いほど高くなる窒素濃度の濃度勾配を有することを特徴とする半導体装置。 - ゲート電極層と、
該ゲート電極層と接する第1の絶縁層と、
該第1の絶縁層に接する第1の酸化物半導体層と、
該第1の酸化物半導体層に接する第2の酸化物半導体層と、
該第2の酸化物半導体層に接する第2の絶縁層と、を有し、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層は、ウルツ鉱型結晶構造を有し、且つ、前記第1の酸化物半導体層の窒素濃度は、前記第2の酸化物半導体層よりも高いことを特徴とする半導体装置。 - 請求項2において、前記第1の酸化物半導体層の窒素濃度は、0.1原子%以上7原子%未満であることを特徴とする半導体装置。
- 請求項2または請求項3において、前記第2の酸化物半導体層の窒素濃度は、1×1017/cm3以上5×1019/cm3未満であることを特徴とする半導体装置。
- 絶縁表面を有する基板上に窒素を含む絶縁膜を形成し、
前記窒素を含む絶縁膜が形成された基板を真空チャンバー内に導入し、
金属酸化物ターゲットが設けられた前記真空チャンバー内に窒素ガスを導入して、基板温度が150℃以上450℃以下の第1の成膜条件により窒素を含む第1の酸化物半導体膜を成膜し、
前記真空チャンバー内に窒素ガスを導入して、基板温度が150℃以上450℃以下の第2の成膜条件により前記第1の酸化物半導体膜上に接して窒素を含む第2の酸化物半導体膜を成膜する半導体装置の作製方法。 - 絶縁表面を有する基板上にゲート電極層を形成し、
前記ゲート電極層上に窒素を含む絶縁膜を形成し、
前記ゲート電極層及び前記窒素を含む絶縁膜が形成された基板を真空チャンバー内に導入し、
金属酸化物ターゲットが設けられた前記真空チャンバー内に窒素ガスを導入して、基板温度が150℃以上450℃以下の第1の成膜条件により窒素を含む第1の酸化物半導体膜を成膜し、
前記真空チャンバー内に窒素ガスを導入して、基板温度が150℃以上450℃以下の第2の成膜条件により前記第1の酸化物半導体膜上に接して窒素を含む第2の酸化物半導体膜を成膜する半導体装置の作製方法。 - 請求項5または請求項6において、さらに、前記第2の成膜条件での成膜後に、150℃以上650℃以下の加熱処理を行う半導体装置の作製方法。
- 請求項5乃至7のいずれか一において、前記第1の成膜条件において、前記真空チャンバーに導入するスパッタガスの全流量比に対する窒素ガス流量の割合は90%以上100%以下である半導体装置の作製方法。
- 請求項5乃至8のいずれか一において、前記第1の成膜条件における前記窒素ガスは加熱された状態で前記真空チャンバーに導入される半導体装置の作製方法。
- 請求項5乃至9のいずれか一において、前記第2の成膜条件におけるスパッタガスは、窒素ガスの他に、酸素ガスまたは希ガスを導入する半導体装置の作製方法。
- 請求項5乃至10のいずれか一において、前記窒素を含む絶縁膜を形成した後、前記窒素を含む絶縁膜の表面に窒素プラズマ処理を行う半導体装置の作製方法。
- 請求項5乃至10のいずれか一において、前記窒素を含む絶縁膜は、窒素プラズマ処理を行って絶縁膜の表面に窒素を添加して形成された膜であることを特徴とする半導体装置の作製方法。
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US8785265B2 (en) | 2014-07-22 |
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