JP2012084757A - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- 230000008569 process Effects 0.000 claims description 42
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- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
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- 239000002253 acid Substances 0.000 abstract description 9
- 239000003377 acid catalyst Substances 0.000 abstract description 9
- 238000006552 photochemical reaction Methods 0.000 abstract description 5
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- 238000006116 polymerization reaction Methods 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
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- 230000032258 transport Effects 0.000 description 68
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- 238000005192 partition Methods 0.000 description 13
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- 101000843045 Homo sapiens HSPB1-associated protein 1 Proteins 0.000 description 12
- 239000011521 glass Substances 0.000 description 8
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- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
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- 239000004973 liquid crystal related substance Substances 0.000 description 4
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- 238000005728 strengthening Methods 0.000 description 4
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- 238000005259 measurement Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 2
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- 238000004904 shortening Methods 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 239000007888 film coating Substances 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Optics & Photonics (AREA)
Abstract
【解決手段】パターン露光処理が行われた基板WがフラッシュベークユニットFLBに搬送される。冷却プレート81の上面に保持された基板Wの表面にフラッシュランプFLからフラッシュ光を照射して瞬間的に加熱し、パターン露光時の光化学反応によってレジスト膜中に生じた活性種を酸触媒としてレジスト樹脂の架橋・重合等を進行させ、レジスト膜の現像液に対する溶解度を露光部分のみ局所的に変化させる露光後ベーク処理を行う。フラッシュ光照射によるフラッシュ加熱処理は処理時間が1秒以下の極めて短時間の処理であるため、露光後ベーク処理時における酸の拡散長を短く抑制することができる。
【選択図】図6
Description
10 インデクサブロック
20 バークブロック
30 レジスト塗布ブロック
40 現像処理ブロック
50 インターフェイスブロック
60 フラッシュ照射部
65 熱処理空間
69 チャンバー窓
70 チャンバー
74 加湿空気供給部
77 排気部
81 冷却プレート
84 リフトピン
90 ユニットコントローラ
BRC,SC 塗布処理ユニット
CP 冷却ユニット
FL フラッシュランプ
FLB フラッシュベークユニット
HP 加熱ユニット
IFR 搬送機構
PASS1〜PASS10 基板載置部
SD 現像処理ユニット
TR1,TR2,TR3,TR4 搬送ロボット
W 基板
Claims (6)
- 露光後の基板に対して露光後ベーク処理を行う熱処理方法であって、
基板の表面に形成された化学増幅型レジスト膜を露光処理した後に当該基板をチャンバー内に収容する収容工程と、
前記チャンバー内に収容された前記基板の表面にフラッシュ光を照射して露光後ベーク処理を行うフラッシュ照射工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記チャンバーから排気を行う排気工程と、
前記チャンバー内に加湿空気を供給する加湿空気供給工程と、
を備えることを特徴とする熱処理方法。 - 請求項1または請求項2に記載の熱処理方法において、
前記基板を前記チャンバー内の冷却プレート上に保持しつつフラッシュ光の照射を行うことを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記フラッシュ照射工程でのフラッシュ光照射による加熱処理時間は1秒以下であることを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記基板の表面に照射されるフラッシュ光より波長300nm未満の光を除去することを特徴とする熱処理方法。 - 露光後の基板に対して露光後ベーク処理を行う熱処理装置であって、
表面に形成された化学増幅型レジスト膜に露光処理が施された基板を収容するチャンバーと、
前記チャンバー内にて前記基板を載置して保持する冷却プレートと、
前記チャンバーから排気を行う排気手段と、
前記チャンバー内に加湿空気を供給する加湿空気供給手段と、
前記冷却プレートに保持されている前記基板にフラッシュ光を照射するフラッシュランプと、
前記フラッシュランプから前記基板に照射されるフラッシュ光から波長300nm未満の光を除去するフィルターと、
を備えることを特徴とする熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010231108A JP5875759B2 (ja) | 2010-10-14 | 2010-10-14 | 熱処理方法および熱処理装置 |
KR20110071326A KR20120038886A (ko) | 2010-10-14 | 2011-07-19 | 열처리방법 및 열처리장치 |
TW100127450A TWI505367B (zh) | 2010-10-14 | 2011-08-02 | 熱處理方法及熱處理裝置 |
US13/239,529 US9064914B2 (en) | 2010-10-14 | 2011-09-22 | Method of and apparatus for heat-treating exposed substrate |
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JP2010231108A JP5875759B2 (ja) | 2010-10-14 | 2010-10-14 | 熱処理方法および熱処理装置 |
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JP2012084757A true JP2012084757A (ja) | 2012-04-26 |
JP5875759B2 JP5875759B2 (ja) | 2016-03-02 |
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US (1) | US9064914B2 (ja) |
JP (1) | JP5875759B2 (ja) |
KR (1) | KR20120038886A (ja) |
TW (1) | TWI505367B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014022497A (ja) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | 熱処理装置、熱処理方法、プログラム及びコンピュータ記憶媒体 |
US8852966B2 (en) | 2011-09-26 | 2014-10-07 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment method and heat treatment apparatus of thin film |
JP2016122844A (ja) * | 2013-02-28 | 2016-07-07 | ウルトラテック インク | 発光ダイオードを利用した材料の製造システムおよび製造方法 |
Families Citing this family (8)
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US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
JP2014011256A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
TW201639063A (zh) * | 2015-01-22 | 2016-11-01 | 應用材料股份有限公司 | 批量加熱和冷卻腔室或負載鎖定裝置 |
NL2014642B1 (en) * | 2015-04-15 | 2016-12-20 | Suss Microtec Lithography Gmbh | Method and device for curing at least in part a photoresist applied to a substrate. |
JP6477270B2 (ja) * | 2015-06-09 | 2019-03-06 | 信越化学工業株式会社 | パターン形成方法 |
US11476167B2 (en) | 2017-03-03 | 2022-10-18 | SCREEN Holdings Co., Ltd. | Heat treatment method and heat treatment apparatus of light irradiation type |
JP7265314B2 (ja) * | 2017-03-03 | 2023-04-26 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7192588B2 (ja) * | 2019-03-12 | 2022-12-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05127371A (ja) * | 1991-11-01 | 1993-05-25 | Hitachi Ltd | パタン形成方法 |
JPH05259064A (ja) * | 1992-03-16 | 1993-10-08 | Hitachi Ltd | 基板加熱方法と基板加熱装置 |
JP2000507046A (ja) * | 1996-03-07 | 2000-06-06 | クラリアント・インターナショナル・リミテッド | ポジ型フォトレジスト組成物の熱処理方法 |
JP2001332484A (ja) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | パターン処理方法 |
JP2007292726A (ja) * | 2006-03-29 | 2007-11-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2008218866A (ja) * | 2007-03-07 | 2008-09-18 | Elpida Memory Inc | パターン形成方法およびパターン形成装置 |
JP2008543033A (ja) * | 2005-05-24 | 2008-11-27 | キモンダ アクチエンゲゼルシャフト | レジストを露光後ベークする方法およびその装置 |
JP2009294439A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Corp | レジストパターン形成方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3734767A1 (de) * | 1987-10-14 | 1989-04-27 | Du Pont Deutschland | Verfahren zum betrieb eines belichtungsgeraets und belichtungsgeraet zur durchfuehrung dieses verfahrens |
US5656229A (en) * | 1990-02-20 | 1997-08-12 | Nikon Corporation | Method for removing a thin film layer |
JPH06337128A (ja) | 1993-05-28 | 1994-12-06 | Daikin Ind Ltd | 空気調和機 |
JP3290943B2 (ja) | 1997-01-16 | 2002-06-10 | 東京エレクトロン株式会社 | レジスト塗布現像処理装置およびレジスト処理方法 |
TW464944B (en) | 1997-01-16 | 2001-11-21 | Tokyo Electron Ltd | Baking apparatus and baking method |
US6100012A (en) * | 1998-07-06 | 2000-08-08 | National Semiconductor Corporation | Infra-red radiation post-exposure bake process for chemically amplified resist lithography |
US6998580B2 (en) | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
EP1394611A1 (en) * | 2002-08-30 | 2004-03-03 | ASML Netherlands BV | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
JP2004134674A (ja) | 2002-10-11 | 2004-04-30 | Toshiba Corp | 基板処理方法、加熱処理装置、パターン形成方法 |
US7090963B2 (en) * | 2003-06-25 | 2006-08-15 | International Business Machines Corporation | Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging |
JP2007258286A (ja) * | 2006-03-22 | 2007-10-04 | Tokyo Electron Ltd | 熱処理装置、熱処理方法及び記憶媒体 |
JP5132920B2 (ja) * | 2006-11-22 | 2013-01-30 | 東京エレクトロン株式会社 | 塗布・現像装置および基板搬送方法、ならびにコンピュータプログラム |
JP5064069B2 (ja) | 2007-03-20 | 2012-10-31 | 株式会社Sokudo | 基板搬送装置および熱処理装置 |
JP5951241B2 (ja) * | 2011-12-07 | 2016-07-13 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
-
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- 2010-10-14 JP JP2010231108A patent/JP5875759B2/ja active Active
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- 2011-07-19 KR KR20110071326A patent/KR20120038886A/ko active Search and Examination
- 2011-08-02 TW TW100127450A patent/TWI505367B/zh active
- 2011-09-22 US US13/239,529 patent/US9064914B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05127371A (ja) * | 1991-11-01 | 1993-05-25 | Hitachi Ltd | パタン形成方法 |
JPH05259064A (ja) * | 1992-03-16 | 1993-10-08 | Hitachi Ltd | 基板加熱方法と基板加熱装置 |
JP2000507046A (ja) * | 1996-03-07 | 2000-06-06 | クラリアント・インターナショナル・リミテッド | ポジ型フォトレジスト組成物の熱処理方法 |
JP2001332484A (ja) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | パターン処理方法 |
JP2008543033A (ja) * | 2005-05-24 | 2008-11-27 | キモンダ アクチエンゲゼルシャフト | レジストを露光後ベークする方法およびその装置 |
JP2007292726A (ja) * | 2006-03-29 | 2007-11-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2008218866A (ja) * | 2007-03-07 | 2008-09-18 | Elpida Memory Inc | パターン形成方法およびパターン形成装置 |
JP2009294439A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Corp | レジストパターン形成方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8852966B2 (en) | 2011-09-26 | 2014-10-07 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment method and heat treatment apparatus of thin film |
JP2014022497A (ja) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | 熱処理装置、熱処理方法、プログラム及びコンピュータ記憶媒体 |
JP2016122844A (ja) * | 2013-02-28 | 2016-07-07 | ウルトラテック インク | 発光ダイオードを利用した材料の製造システムおよび製造方法 |
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US20120091110A1 (en) | 2012-04-19 |
TW201250850A (en) | 2012-12-16 |
US9064914B2 (en) | 2015-06-23 |
TWI505367B (zh) | 2015-10-21 |
JP5875759B2 (ja) | 2016-03-02 |
KR20120038886A (ko) | 2012-04-24 |
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