JP2012064914A - 放熱基板及びその製造方法 - Google Patents
放熱基板及びその製造方法 Download PDFInfo
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Abstract
【解決手段】銅基板330、銅基板330の一面に形成されたアルミナ層320、アルミナ層320に形成された第1回路層340からなる放熱基板を用い、アルミナ層320を貫くように開口部390を形成し、開口部390を通じてアルミナ層320から露出された銅基板330にソルダパッド610を付着した後、これに発熱素子600を実装することにより、銅基板330の露出面に発熱素子600が直接実装されるパッケージ700を具現する。
【選択図】図21
Description
図5は、本発明の好適な第1実施例による放熱基板の断面図である。
図7〜図11は、本発明の好適な第1実施例による放熱基板を製造する方法を説明するための工程断面図である。以下、同図に基づいて、本実施例による放熱基板の製造方法について説明する。
110 アルミニウム基板
120 アルミナ層
130 回路層
140 発熱素子
210 ベース基板
220 エポキシ樹脂層
230 回路層
240 パッド部
250 熱拡散器
260 発熱素子
270 アルミニウムワイヤ
300、400 放熱基板
310 アルミニウム基板
320 アルミナ層
325 エッチングレジストパターン
311 陽極酸化基板
330 銅基板
340 第1回路層
200、500、700 パッケージ(発熱素子実装型放熱基板)
340a 第1回路パターン
340b 第1パッド部
350 第2回路層
350a 第2回路パターン
350b 第2パッド部
360 モールディング部
370 ワイヤ
380 シード層
390 開口部
600 発熱素子
610 ソルダパッド
Claims (19)
- 銅基板;
前記銅基板の一面に形成されたアルミナ層;及び
前記アルミナ層に形成され、第1回路パターン及び第1パッド部を含む第1回路層;
を含むことを特徴とする、放熱基板。 - 前記第1回路パターンに対応するように形成された第2回路パターン;及び
前記第1パッド部に対応するように形成された第2パッド部;
を含む第2回路層をさらに含むことを特徴とする、請求項1に記載の放熱基板。 - 前記第1パッド部に発熱素子が実装されたことを特徴とする、請求項1に記載の放熱基板。
- 前記第2パッド部に発熱素子が実装されたことを特徴とする、請求項2に記載の放熱基板。
- 前記アルミナ層を貫くように形成された開口部をさらに含み、
前記開口部を通じて露出された前記銅基板にソルダパッドを介して発熱素子が実装されたことを特徴とする、請求項1に記載の放熱基板。 - 前記アルミナ層を貫くように形成された開口部をさらに含み、
前記開口部を通じて露出された前記銅基板にソルダパッドを介して発熱素子が実装されたことを特徴とする、請求項2に記載の放熱基板。 - 前記第1回路層は銅またはアルミニウムで形成されたことを特徴とする、請求項1に記載の放熱基板。
- 前記第1回路層はアルミニウムで形成され、前記第2回路層は銅で形成されたことを特徴とする、請求項2に記載の放熱基板。
- 前記銅基板と前記アルミナ層の間にシード層をさらに含むことを特徴とする、請求項1に記載の放熱基板。
- (A)アルミニウム基板の全面にアルミナ層が形成された陽極酸化基板を準備する段階;
(B)前記陽極酸化基板の一面に銅基板を形成する段階;
(C)前記陽極酸化基板の他面から前記銅基板に接した前記アルミナ層の前まで前記陽極酸化基板を除去する段階;
(D)前記銅基板に接したアルミナ層の露出面に第1回路パターン及び第1パッド部を含む第1回路層を形成する段階;
を含むことを特徴とする、放熱基板の製造方法。 - 前記(D)段階の後に、
(E)前記アルミナ層を貫く開口部を形成する段階;及び
(F)前記開口部を通じて露出された前記銅基板にソルダパッドを介して発熱素子を実装する段階;をさらに含むことを特徴とする、請求項10に記載の放熱基板の製造方法。 - 前記(D)段階の後に、
(G)前記第1パッドに発熱素子を実装することを特徴とする、請求項10に記載の放熱基板の製造方法。 - 前記第1回路層は銅で形成されることを特徴とする、請求項10に記載の放熱基板の製造方法。
- 前記(A)段階と前記(B)段階の間に、
(A’)陽極酸化基板の一面にシード層を形成する段階;
をさらに含むことを特徴とする、請求項10に記載の放熱基板の製造方法。 - (A)アルミニウム基板の全面にアルミナ層が形成された陽極酸化基板を準備する段階;
(B)前記陽極酸化基板の一面に銅基板を形成する段階;
(C)前記陽極酸化基板の他面から前記アルミニウム基板の前まで前記アルミナ層を除去し、前記アルミニウム基板を選択的に除去することで、第1回路パターン及び第1パッド部を含む第1回路層を形成する段階;及び
(D)前記第1回路層の第1回路パターンに対応する第2回路パターン及び前記第1回路層の第1パッド部に対応する第2パッド部を形成する段階;
を含むことを特徴とする、放熱基板の製造方法。 - 前記(D)段階の後に、
(E)前記アルミナ層を貫く開口部を形成する段階;
(F)前記開口部を通じて露出された前記銅基板にソルダパッドを介して発熱素子を実装する段階;をさらに含むことを特徴とする、請求項15に記載の放熱基板の製造方法。 - 前記(D)段階の後に、
(G)前記第2パッドに発熱素子を実装することを特徴とする、請求項15に記載の放熱基板の製造方法。 - 前記第2回路層は銅で形成されたことを特徴とする、請求項15に記載の放熱基板の製造方法。
- 前記(A)段階と前記(B)段階の間に、
(A’)陽極酸化基板の一面にシード層を形成する段階;
をさらに含むことを特徴とする、請求項15に記載の放熱基板の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR1020100091226A KR101167425B1 (ko) | 2010-09-16 | 2010-09-16 | 방열기판 및 그 제조방법 |
KR10-2010-0091226 | 2010-09-16 |
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JP2012064914A true JP2012064914A (ja) | 2012-03-29 |
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US (1) | US20120067623A1 (ja) |
JP (1) | JP2012064914A (ja) |
KR (1) | KR101167425B1 (ja) |
CN (1) | CN102403280A (ja) |
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KR101237668B1 (ko) | 2011-08-10 | 2013-02-26 | 삼성전기주식회사 | 반도체 패키지 기판 |
KR101509747B1 (ko) * | 2013-12-20 | 2015-04-07 | 현대자동차 주식회사 | 방열 인쇄 회로 기판 및 그 제조 방법 |
KR101552422B1 (ko) * | 2014-01-14 | 2015-09-10 | 성균관대학교산학협력단 | 발광 다이오드용 기판 및 그 제조방법과 상기 기판을 포함하는 광원 장치 |
CN109564918B (zh) * | 2016-08-10 | 2023-09-29 | 三菱电机株式会社 | 半导体装置 |
WO2018060231A1 (en) * | 2016-09-27 | 2018-04-05 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Highly thermally conductive dielectric structure for heat spreading in component carrier |
CN111757597B (zh) * | 2020-08-04 | 2021-09-07 | 景旺电子科技(龙川)有限公司 | 一种揭盖法制作双面阳极氧化铝基线路板的方法 |
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2010
- 2010-09-16 KR KR1020100091226A patent/KR101167425B1/ko active IP Right Grant
- 2010-12-03 JP JP2010270766A patent/JP2012064914A/ja active Pending
- 2010-12-20 CN CN2010106097657A patent/CN102403280A/zh active Pending
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2011
- 2011-01-14 US US13/007,414 patent/US20120067623A1/en not_active Abandoned
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JPH07142832A (ja) * | 1993-11-12 | 1995-06-02 | Nec Corp | プリント基板およびそれを用いた電子回路 |
JPH07162116A (ja) * | 1993-12-01 | 1995-06-23 | Toagosei Co Ltd | 金属ベース基板材料およびその製造方法 |
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CN102403280A (zh) | 2012-04-04 |
KR20120029250A (ko) | 2012-03-26 |
KR101167425B1 (ko) | 2012-07-23 |
US20120067623A1 (en) | 2012-03-22 |
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