JP2012043999A - Electronic device, package board, and package board type semiconductor device - Google Patents

Electronic device, package board, and package board type semiconductor device Download PDF

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JP2012043999A
JP2012043999A JP2010184231A JP2010184231A JP2012043999A JP 2012043999 A JP2012043999 A JP 2012043999A JP 2010184231 A JP2010184231 A JP 2010184231A JP 2010184231 A JP2010184231 A JP 2010184231A JP 2012043999 A JP2012043999 A JP 2012043999A
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semiconductor device
optical
optical communication
signal
communication unit
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Kazuhisa Tajima
一久 田島
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Optical Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To suppress an increased development cost when converting electric signal communication between semiconductor devices on a package board into optical communication.SOLUTION: At least one pair or more input/output devices of an optical communication device for converting an electric signal into an optical signal is provided on a package board for each semiconductor device, on the package board right below, i.e., in the vicinity (wiring connection having a chip-to-chip minimum distance of 2 mm or smaller) of the mounted semiconductor devices. Each semiconductor device mounted on the package board performs at least inputting and outputting through electric signals, while wiring connection is made between each optical communication device formed on the package board through optical signals via an optical waveguide. By this, design to incorporate circuits related to optical communication into the mounted semiconductor device side and development of manufacturing process become unnecessary, and an optical semiconductor device is achieved by the development of the optical communication semiconductor device on the package board side. Also, with a simplified structure on the optical communication device for accommodating an optical receiving circuit in the optical communication device on the package board, further cost reduction is achieved.

Description

本発明は、半導体装置の間の通信を実装基板を介して行う電子装置、実装基板、及び実装基板型半導体装置に関する。   The present invention relates to an electronic device that performs communication between semiconductor devices via a mounting substrate, a mounting substrate, and a mounting substrate type semiconductor device.

半導体装置の動作周波数が高速化してＧＨｚ帯になると、金属配線では物理的な制約により信号波形の訛り、遅延が発生する。これを修正する手法の一つとして供給電力をＵＰすると、今度は発熱や消費電力の増加となり、半導体装置の安定稼動を阻害してしまう。そこで、それらの問題を改善する手段として、半導体装置間の信号の伝達速度が半導体装置の動作周波数に追従できなくなる場合が出てくる。そこで、半導体装置間の通信を光で行うことが検討されている（例えば特許文献１及び２）。特許文献１及び２では、半導体装置を構成する半導体チップに光受信素子及び光送信素子を組み込むことにより、半導体装置間の通信を光で行えるようにしている。   When the operating frequency of the semiconductor device is increased to the GHz band, the metal waveform causes a signal waveform curve and delay due to physical restrictions. If the power supply is increased as one of the methods for correcting this, heat generation and power consumption increase this time, which hinders stable operation of the semiconductor device. Therefore, as means for solving these problems, there are cases where the signal transmission speed between the semiconductor devices cannot follow the operating frequency of the semiconductor devices. Therefore, it has been studied to perform communication between semiconductor devices using light (for example, Patent Documents 1 and 2). In Patent Documents 1 and 2, an optical receiving element and an optical transmitting element are incorporated into a semiconductor chip that constitutes a semiconductor device, so that communication between the semiconductor devices can be performed with light.

特開２００６−０８４７６６号公報JP 2006-084766 A 特開平６−２３６９４１号公報JP-A-6-236941

例として、ロジック回路を有する半導体基板上に受光回路や発光回路を形成するためには、従来のロジック回路を形成するプロセスには含まれていない材料や特殊な形状を適用する必要がある。この場合、半導体装置の製造プロセスに大幅な変更や追加が必要となってしまい、その結果、プロセスの開発コストが大幅に上昇してしまう。また、この問題は製造プロセス毎に発生する。これは、過去の開発資産に関して全て再開発が必要となり、過去の資産が生かせなくなることを意味する。   As an example, in order to form a light receiving circuit or a light emitting circuit on a semiconductor substrate having a logic circuit, it is necessary to apply a material or a special shape that is not included in a process for forming a conventional logic circuit. In this case, a large change or addition is required in the manufacturing process of the semiconductor device, and as a result, the development cost of the process increases significantly. This problem occurs every manufacturing process. This means that all redevelopment assets need to be redeveloped, making it impossible to make use of past assets.

本発明によれば、少なくとも出力を電気信号で行う第１半導体装置と、
前記第１半導体装置が実装される実装基板と、
前記実装基板に実装され、前記第１半導体装置から出力された信号を受信する第２半導体装置と、
前記実装基板に設けられ、前記第１半導体装置から出力された電気信号を光信号に変換して前記第２半導体装置に送信する第１光通信部と、
を備える電子装置が提供される。 According to the present invention, a first semiconductor device that outputs at least an electrical signal;
A mounting substrate on which the first semiconductor device is mounted;
A second semiconductor device mounted on the mounting substrate and receiving a signal output from the first semiconductor device;
A first optical communication unit that is provided on the mounting substrate, converts an electrical signal output from the first semiconductor device into an optical signal, and transmits the optical signal to the second semiconductor device;
An electronic device is provided.

本発明によれば、少なくとも１組の前記の実装基板に実装された第１・第２半導体装置各々の近傍に第１・第２通信モジュ−ル部を各々配し、実装基板内の通信部間を光信号で結び、各々通信モジュ−ル部にて光信号を電気信号へ各々変換する機能を入出力として複数備える半導体装置が提供される。   According to the present invention, the first and second communication module sections are arranged in the vicinity of each of the first and second semiconductor devices mounted on at least one set of the mounting boards, and the communication section in the mounting board is provided. There is provided a semiconductor device having a plurality of functions as input / outputs, each of which has a function of connecting an optical signal to each other and converting each of the optical signal into an electric signal in each communication module.

本発明によれば、第１・第２光通信部は第１・第２半導体装置上ではなく実装基板に組み込まれている。このため、半導体装置の構造を大きく変更する必要がなく、光通信モジュ−ル部単体として開発できる。従って、半導体装置毎の開発コストが上昇することを抑制できる。   According to the present invention, the first and second optical communication units are incorporated in the mounting board, not on the first and second semiconductor devices. For this reason, it is not necessary to greatly change the structure of the semiconductor device, and it can be developed as an optical communication module unit alone. Therefore, an increase in development cost for each semiconductor device can be suppressed.

本発明によれば、第１半導体装置及び第２半導体装置が実装される実装基板であって、
前記第１半導体装置は少なくとも出力を電子信号で行い、
前記第１半導体装置の出力端子に接続する外部接続端子と、
前記外部接続端子に入力された電気信号を光信号に変換して前記第２半導体装置に送信する第１光通信部と、
を備える実装基板が提供される。 According to the present invention, a mounting substrate on which a first semiconductor device and a second semiconductor device are mounted,
The first semiconductor device outputs at least an electronic signal;
An external connection terminal connected to the output terminal of the first semiconductor device;
A first optical communication unit that converts an electrical signal input to the external connection terminal into an optical signal and transmits the optical signal to the second semiconductor device;
A mounting substrate is provided.

本発明によれば、実装基板に半導体装置間信号光通信部と光導波路による光通信機能と電源供給用および信号送信用に用いるメタル配線を積層構造として共有する実装基板が提供される。   According to the present invention, there is provided a mounting substrate that shares an optical communication function using an inter-semiconductor signal optical communication unit and an optical waveguide, and metal wiring used for power supply and signal transmission as a stacked structure on the mounting substrate.

本発明によれば、配線基板に光導波路及び光通信モジュールを埋設し、実装表面を平坦に整形し、その上層に遮光性、絶縁性、及び放熱性を持った層を形成した実装基板型半導体装置が提供される。   According to the present invention, a mounting substrate type semiconductor in which an optical waveguide and an optical communication module are embedded in a wiring substrate, a mounting surface is shaped flat, and a layer having a light shielding property, an insulating property, and a heat dissipation property is formed thereon. An apparatus is provided.

本発明によれば、電子装置のコストが増加することを抑制できる。   ADVANTAGE OF THE INVENTION According to this invention, it can suppress that the cost of an electronic device increases.

第１の実施形態に係る電子装置の断面図である。1 is a cross-sectional view of an electronic device according to a first embodiment. 図１に示した電子装置に用いられる実装基板の平面概略図である。FIG. 2 is a schematic plan view of a mounting board used in the electronic device shown in FIG. 1. 半導体装置と実装基板の接続構造を説明するための断面拡大図である。It is a cross-sectional enlarged view for demonstrating the connection structure of a semiconductor device and a mounting substrate. 光通信モジュールの機能構成を示すブロック図である。It is a block diagram which shows the function structure of an optical communication module. 光送受信部の機能構成を示すブロック図である。It is a block diagram which shows the function structure of an optical transmission / reception part. 第２の実施形態に係る電子装置の断面図である。It is sectional drawing of the electronic device which concerns on 2nd Embodiment. 半導体装置と実装基板の接続構造を説明するための断面拡大図である。It is a cross-sectional enlarged view for demonstrating the connection structure of a semiconductor device and a mounting substrate. 図７の変形例を示す断面拡大図である。It is a cross-sectional enlarged view which shows the modification of FIG.

以下、本発明の実施の形態について、図面を用いて説明する。尚、すべての図面において、同様な構成要素には同様の符号を付し、適宜説明を省略する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

（第１の実施形態）
図１は、第１の実施形態に係る電子装置の断面図である。図２は、図１に示した電子装置に用いられる実装基板１００の平面概略図である。この電子装置は、第１半導体装置（第１の半導体装置２００）、実装基板１００、第２半導体装置（第２の半導体装置２００）、及び第１光通信部（光通信モジュール３００）を備えている。第１の半導体装置２００は、少なくとも出力を電気信号で行い、実装基板１００に実装されている。第２の半導体装置２００は、実装基板１００に実装され、第１の半導体装置２００から出力された信号を受信する。光通信モジュール３００は実装基板１００に設けられており、第１の半導体装置２００から出力された電気信号を光信号に変換して第２の半導体装置２００に送信する。以下、詳細に説明する。 (First embodiment)
FIG. 1 is a cross-sectional view of the electronic device according to the first embodiment. FIG. 2 is a schematic plan view of the mounting substrate 100 used in the electronic device shown in FIG. The electronic device includes a first semiconductor device (first semiconductor device 200), a mounting substrate 100, a second semiconductor device (second semiconductor device 200), and a first optical communication unit (optical communication module 300). Yes. The first semiconductor device 200 outputs at least an electrical signal and is mounted on the mounting substrate 100. The second semiconductor device 200 is mounted on the mounting substrate 100 and receives a signal output from the first semiconductor device 200. The optical communication module 300 is provided on the mounting substrate 100, converts an electrical signal output from the first semiconductor device 200 into an optical signal, and transmits the optical signal to the second semiconductor device 200. Details will be described below.

図２に示す様に、本実施形態において実装基板１００は例えばマザーボードであり、複数の半導体装置２００が実装されている。複数の半導体装置２００は、それぞれ入力及び出力の双方を電気信号で行う。そして実装基板１００には光通信モジュール３００が、複数の半導体装置２００別に設けられている。光通信モジュール３００は、いずれもその光通信モジュール３００が接続する半導体装置２００と、平面視で重なっている。   As shown in FIG. 2, in the present embodiment, the mounting substrate 100 is a motherboard, for example, and a plurality of semiconductor devices 200 are mounted thereon. Each of the plurality of semiconductor devices 200 performs both input and output by electric signals. The mounting substrate 100 is provided with the optical communication module 300 for each of the plurality of semiconductor devices 200. Each of the optical communication modules 300 overlaps the semiconductor device 200 to which the optical communication module 300 is connected in plan view.

実装基板１００には、光通信モジュール３００を相互に接続するために、光導波路１４０が設けられている。各光通信モジュール３００は、その光通信モジュール３００が接続する半導体装置２００から電気信号を受信すると、その電気信号を光信号に変換し、変換後の光信号を、光導波路１４０を介して他の光通信モジュール３００に送信する。また各光通信モジュール３００は、光導波路１４０を介して他の光通信モジュール３００から光信号を受信すると、受信した光信号を電気信号に変換して、当該光通信モジュール３００が接続する半導体装置２００に出力する。   The mounting substrate 100 is provided with an optical waveguide 140 for connecting the optical communication modules 300 to each other. When each optical communication module 300 receives an electrical signal from the semiconductor device 200 to which the optical communication module 300 is connected, the optical communication module 300 converts the electrical signal into an optical signal, and converts the converted optical signal to another optical signal via the optical waveguide 140. Transmit to the optical communication module 300. When each optical communication module 300 receives an optical signal from another optical communication module 300 via the optical waveguide 140, the optical communication module 300 converts the received optical signal into an electrical signal, and the semiconductor device 200 to which the optical communication module 300 is connected. Output to.

なお実装基板１００は、少なくとも一層のメタル配線層（１１２，１１３，１１４等の電極パッドと同層で形成する電源系メタル配線または低速信号用メタル配線）及びその上層の保護絶縁層１０６を有する通常のプリント配線層１０３の下層に遮光絶縁放熱層１０４を介して光通信モジュール３００及び光導波路１４０を配線基板１２０上に形成する。すなわち実装基板１００は、供給電力と低速電気信号系メタル配線と高速信号転送系の光信号配線の双方を伝達するハイブリッド基板による光高速転送半導体装置を形成することができる。   The mounting substrate 100 usually has at least one metal wiring layer (power supply metal wiring or low-speed signal metal wiring formed in the same layer as the electrode pads such as 112, 113, and 114) and a protective insulating layer 106 thereabove. The optical communication module 300 and the optical waveguide 140 are formed on the wiring board 120 via the light shielding and insulating heat radiation layer 104 below the printed wiring layer 103. That is, the mounting substrate 100 can form an optical high-speed transfer semiconductor device using a hybrid substrate that transmits both supply power, low-speed electrical signal system metal wiring, and high-speed signal transfer optical signal wiring.

図１に示す例では、半導体装置２００は、例えば半導体パッケージである。そして半導体装置２００は、高速信号線用外部接続端子２１２、２１４、例えばハンダボールを介して実装基板１００の外部接続端子１１２，１１４の電極に各々接続している。半導体装置２００の出力部が、外部接続端子２１２、電極１１２、及びビア１０７を介して光通信モジュール３００に接続しており、半導体装置２００の入力部が外部接続端子２１４、電極１１４、及びビア１０８を介して光通信モジュール３００に接続している。ビア１０７，１０８は、遮光絶縁放熱層１０４を貫通し、保護絶縁膜１０６の下層に位置する電極パッドへ繋がっている。   In the example illustrated in FIG. 1, the semiconductor device 200 is, for example, a semiconductor package. The semiconductor device 200 is connected to the electrodes of the external connection terminals 112 and 114 of the mounting substrate 100 via high-speed signal line external connection terminals 212 and 214, for example, solder balls. The output unit of the semiconductor device 200 is connected to the optical communication module 300 via the external connection terminal 212, the electrode 112, and the via 107, and the input unit of the semiconductor device 200 is connected to the external connection terminal 214, the electrode 114, and the via 108. It is connected to the optical communication module 300 via The vias 107 and 108 penetrate the light-shielding insulating heat radiation layer 104 and are connected to electrode pads located under the protective insulating film 106.

図３は、半導体装置２００と実装基板１００の接続構造を説明するための断面拡大図である。半導体装置２００は半導体チップ２０２をインターポーザ２０４にフリップチップ実装したものである。そしてインターポーザ２０４の下面には、光信号配線距離を最短にすべく、インタ−ポ−ザを介さずに外部接続端子２１２，２１４が特別に設けられている。外部接続端子２１２，２１４は、上記したように光通信モジュ−ル３００側入出力専用線電極１１２，１１４に接続している。なおインターポーザ２０４の下面には外部接続端子２１２，２１４以外の端子２１３（例えば電源端子や接地端子、低速のメタル信号線であり、電極１１３に接続している）が設けられており、これら端子は図には表れていないが少なくともパッド形成時の１層（従来どおりメタル＋絶縁層にて積層形成可能）にて、１０４の遮光絶縁放熱層と１０６の保護絶縁層の間にメタル配線が形成されており、従来どおり実装基板上にメタル配線を形成している。   FIG. 3 is an enlarged cross-sectional view for explaining a connection structure between the semiconductor device 200 and the mounting substrate 100. The semiconductor device 200 is obtained by flip-chip mounting a semiconductor chip 202 on an interposer 204. External connection terminals 212 and 214 are specially provided on the lower surface of the interposer 204 without using an interposer so as to minimize the optical signal wiring distance. The external connection terminals 212 and 214 are connected to the input / output dedicated line electrodes 112 and 114 on the optical communication module 300 side as described above. Note that a terminal 213 other than the external connection terminals 212 and 214 (for example, a power supply terminal, a ground terminal, a low-speed metal signal line and connected to the electrode 113) is provided on the lower surface of the interposer 204. Although not shown in the drawing, metal wiring is formed between 104 light-shielding insulating heat-dissipating layers and 106 protective insulating layers in at least one layer at the time of pad formation (which can be laminated with a metal + insulating layer as before). The metal wiring is formed on the mounting board as before.

図４は、光通信モジュール３００の機能構成を示すブロック図である。光通信モジュール３００は、図５に示す光送受信ユニット３４０により構成され、光送受信ユニット３４０は、光出力ユニット３５０と光受信ユニット３６０により構成されている。その光送受信ユニット３４０の構成例で２面、３面、４面用を実施例として表しているのが図４となる。これは、光導波部が、メタル配線とは異なり、その特性上鋭角に曲げることができない為、入出力面を多面に形成する構成とすることで対応することを考案したものである。また、図３の送信ユニット例は、１面２０列の光送信ユニットであるため、幅を取るが用途により面あたりの送信ユニット列は用途により増減可能であることを付け加えておく。図５の構成の通り、端子１１２からの入信号をインタフェ−ス３５２、コントロ−ラ３５４を介して複数バイト並列高速送信でも、複数１ＢＩＴ高速通信でも可能な構成としている。この送受信ユニットの各面毎に複数のユニットを設置する場合の配置事例が図４となる。   FIG. 4 is a block diagram showing a functional configuration of the optical communication module 300. The optical communication module 300 includes an optical transmission / reception unit 340 illustrated in FIG. 5, and the optical transmission / reception unit 340 includes an optical output unit 350 and an optical reception unit 360. FIG. 4 shows a configuration example of the optical transmission / reception unit 340 for two surfaces, three surfaces, and four surfaces as an example. Since the optical waveguide portion cannot be bent at an acute angle because of its characteristics, unlike the metal wiring, it is devised to cope with this by forming a multi-sided input / output surface. Further, since the example of the transmission unit in FIG. 3 is an optical transmission unit having 20 rows per side, it is added that the transmission unit row per plane can be increased or decreased depending on the usage depending on the usage. As shown in the configuration of FIG. 5, the incoming signal from the terminal 112 is configured to be capable of both multi-byte parallel high-speed transmission and multiple 1-bit high-speed communication via the interface 352 and the controller 354. FIG. 4 shows an arrangement example when a plurality of units are installed on each surface of the transmission / reception unit.

なお、光送受信部３４０の配置及び面毎の受光ユニットの数は、その光通信モジュール３００が対応している半導体装置の配置位置及び通信先のユニット数に基づいて、適宜設定される。また、図４（ａ）に示す例では、２面の光送受信ユニット部３４０が互いに並んで配置され、これら２面の光送受信部３４０の側部に専用のコントローラ部３２０が配置されている。また図４（ｂ）に示す例では、図４（ａ）に示した例に加えて、さらに１面の光送受信ユニット部３４０が設けられている。また図４（ｃ）に示す例では、４面の光通信部の内側にコントローラ部３２０（光送受信部３４０と光送信ユニット３５０の総称）が配置されている。前述の、光送信ユニット３５０と光受信ユニット３６０の間の光導波路は面毎のそのユニット数に応じて同数存在する必要があり、回路構成によっては１本の送信導波路をスプリットして複数本に分けた場合、受光側ユニット分がその分増加する場合もあることを付け加えておく。   The arrangement of the optical transceiver 340 and the number of light receiving units for each surface are appropriately set based on the arrangement position of the semiconductor device supported by the optical communication module 300 and the number of communication destination units. In the example shown in FIG. 4A, two optical transmission / reception unit units 340 are arranged side by side, and a dedicated controller unit 320 is arranged on the side of the two optical transmission / reception units 340. Further, in the example shown in FIG. 4B, in addition to the example shown in FIG. 4A, an optical transmission / reception unit section 340 is further provided. In the example shown in FIG. 4C, a controller unit 320 (a general term for the optical transmission / reception unit 340 and the optical transmission unit 350) is arranged inside the four optical communication units. The number of optical waveguides between the optical transmission unit 350 and the optical reception unit 360 described above must be the same according to the number of units per surface. Depending on the circuit configuration, a plurality of transmission waveguides may be split. In addition, it is added that the light receiving side unit may increase by that amount.

図５は、前述の通り図４の送受信装置３４０の構成ユニットである光送信部３５０と光受信部３６０の機能構成を示すブロック図である。光送受信部３４０は、光送信部３５０及び光受信部３６０を備えている。光送信部３５０は複数の発光素子３５６を備えている。発光素子３５６は、コントローラ部３２０のインターフェース３５２及びコントローラ３５４を介して、電極１１２に接続している。光受信部３６０は、複数の光電変換素子３６２を備えている。光電変換素子３６２は、コントローラ部３２０の受信回路３６４及びインターフェース３６６を介して、電極１１４に接続している。受信回路３６４は、信号を復調する回路、アンプ群、及びコントローラを含んでいる。   FIG. 5 is a block diagram illustrating the functional configuration of the optical transmission unit 350 and the optical reception unit 360 that are constituent units of the transmission / reception device 340 of FIG. 4 as described above. The optical transmission / reception unit 340 includes an optical transmission unit 350 and an optical reception unit 360. The optical transmission unit 350 includes a plurality of light emitting elements 356. The light emitting element 356 is connected to the electrode 112 via the interface 352 and the controller 354 of the controller unit 320. The light receiving unit 360 includes a plurality of photoelectric conversion elements 362. The photoelectric conversion element 362 is connected to the electrode 114 via the reception circuit 364 and the interface 366 of the controller unit 320. The reception circuit 364 includes a circuit that demodulates a signal, an amplifier group, and a controller.

次に、本実施形態の作用及び効果について説明する。上記したように、従来のロジック回路を有する半導体チップに受光素子や発光素子を形成するためには、従来ロジック回路を形成していた従来プロセスには含まれていない材料や特殊な形状を適用する必要がある。この場合、半導体装置の製造プロセスに大幅な変更やプロセス追加が必要となってしまうことは周知の事実である。半導体装置の製造には現状でも数百に及ぶプロセスが必要であるが、現状半導体チップ上に光送受信ユニットをオンチップで載せた場合、各半導体装置毎に設計の変更、製造プロセスの変更が発生することは明らかである。そして、上記した変更や追加を行うと、各半導体装置毎に実施した場合、開発コストが膨大なものと成ることは、現在の装置基板上の半導体装置の数を見れば明らかで有り、そのことが半導体装置の光信号化の最大の障害と成ることは明らかである。また、光送受信ユニットのオンチップ化は半導体装置の歩留まりの低下や、受光素子や発光素子を設けることによる半導体チップの大型化を引き起こすことになり生産性の悪化を招く要因ともなる。   Next, the operation and effect of this embodiment will be described. As described above, in order to form a light receiving element and a light emitting element on a semiconductor chip having a conventional logic circuit, a material or a special shape that is not included in the conventional process for forming the conventional logic circuit is applied. There is a need. In this case, it is a well-known fact that a significant change or process addition is required in the semiconductor device manufacturing process. Currently, several hundred processes are required to manufacture semiconductor devices. However, when an optical transceiver unit is mounted on-chip on a current semiconductor chip, design changes and manufacturing process changes occur for each semiconductor device. It is clear to do. And, if the above changes and additions are made, it is obvious from the number of semiconductor devices on the current device substrate that the development cost will be enormous when implemented for each semiconductor device. Obviously, this is the biggest obstacle to the optical signal generation of semiconductor devices. In addition, the on-chip optical transmission / reception unit causes a decrease in the yield of the semiconductor device and an increase in the size of the semiconductor chip due to the provision of the light receiving element and the light emitting element, which causes a deterioration in productivity.

また前述の通り受光素子や発光素子を半導体チップに搭載する場合、製品単位で受光素子や発光素子の回路変更やそれに伴うレチクルの改版を行う必要が発生する。この点からも、半導体装置の開発コストが大幅に上昇してしまう。そして半導体装置の開発コストが上昇すると、電子装置の価格も上昇してしまうため、特定の高価な製品にしかその技術が一気に適用できなくなってしまい光半導体化が進まない足枷となり、光ＩＣ化に対し全体の速度向上が一気に進まない状態を作る要因となる。   In addition, when the light receiving element or the light emitting element is mounted on the semiconductor chip as described above, it is necessary to change the circuit of the light receiving element or the light emitting element and to change the reticle accordingly. Also from this point, the development cost of the semiconductor device is significantly increased. And if the development cost of semiconductor devices rises, the price of electronic devices also rises, so that the technology can only be applied to specific expensive products at a stretch, and it becomes a foothold that does not make optical semiconductors progress. On the other hand, the improvement in the overall speed is a factor that creates a state where the speed does not progress at a stretch.

これに対して本実施形態では、光通信モジュール３００は半導体装置２００ではなくハイブリッド基板１００に組み込まれている。このため、既存半導体装置毎に光素子を組み込む必要がなくなり、その半導体装置自体は構造を大きく変更する必要がない。また、光送受信ユニットとしても専用プロセス化し、光送受信ユニットとして幾つかの汎用製品として開発が可能であり、また、光半導体ユニット単体としての品質向上や特性や価格改善を進めやすいメリットも発生する。従って、半導体装置の開発コストが上昇することを抑制できる。一方、ハイブリッド基板１００としては、従来にない光半導体装置と光導波路の埋め込み形成が必要になるが、既存の配線基板技術の延長上の技術であること、並びに既に光半導体ユニットも光導波路も研究レベルではあるが既に開発できていることから鑑みて、開発コストの面から光半導体装置へのスム−ズな移行を考慮した場合、多大な貢献のある技術に他ならない。   On the other hand, in this embodiment, the optical communication module 300 is incorporated in the hybrid substrate 100 instead of the semiconductor device 200. For this reason, it is not necessary to incorporate an optical element for each existing semiconductor device, and the semiconductor device itself does not need to be greatly changed in structure. Also, the optical transceiver unit can be developed as a dedicated process and developed as an optical transceiver unit as several general-purpose products. Further, there is a merit that it is easy to promote quality improvement, characteristics and price improvement as an optical semiconductor unit alone. Therefore, an increase in the development cost of the semiconductor device can be suppressed. On the other hand, as the hybrid substrate 100, it is necessary to embed an optical semiconductor device and an optical waveguide, which are not conventional, but this is an extension of the existing wiring substrate technology, and already researches both optical semiconductor units and optical waveguides. In view of the fact that it has already been developed at a level, but considering a smooth transition to an optical semiconductor device in terms of development cost, it is nothing but a technology that contributes greatly.

また半導体装置と受光素子及び発光素子を分離しているため、受光素子及び発光素子を半導体チップ２０２とは異なる半導体（例えばＧａＡｓなどの化合物半導体）を用いて形成することができるため、受光素子及び発光素子の特性を高くすることができる。また半導体装置上に受光素子及び発光素子を設けなくてよいため、半導体チップの巨大化や製造歩留まりの低下を抑制できる。さらに、半導体装置と実装基板と個別に開発できるため、製品のバリエーションを増やしやすい等々の付随するメリットは多数存在することになる。   Further, since the semiconductor device is separated from the light receiving element and the light emitting element, the light receiving element and the light emitting element can be formed using a semiconductor (for example, a compound semiconductor such as GaAs) different from the semiconductor chip 202. The characteristics of the light emitting element can be improved. Further, since it is not necessary to provide the light receiving element and the light emitting element on the semiconductor device, it is possible to suppress the enlargement of the semiconductor chip and the decrease in the manufacturing yield. Furthermore, since the semiconductor device and the mounting substrate can be developed separately, there are many accompanying merits such as easy to increase product variations.

また、信号系の配線を光導波路１４０で行うため、ハイブリッド型の実装基板１００の場合、極端な場合電力系の配線以外は省略することが可能となり、電気信号を伝達する配線が大幅に削減され、信号線へのノイズ考慮等の問題からも開放され、現状７層、８層に及ぶ基板メタル配線層を大幅に削減することができることになり、光信号関係装置の埋め込みによって増加する製造コストを大幅に削減できることにもなる。   In addition, since the signal system wiring is performed by the optical waveguide 140, in the case of the hybrid type mounting substrate 100, it is possible to omit other than the power system wiring in an extreme case, and the wiring for transmitting the electrical signal is greatly reduced. This is also freed from problems such as noise considerations for signal lines, and the current 7-layer and 8-layer substrate metal wiring layers can be greatly reduced, resulting in increased manufacturing costs due to the embedding of optical signal related devices. It can also be greatly reduced.

また半導体装置２００から出力される電気信号は、遅延等を考慮して最短で接続する必要はあるが、光通信モジュール３００までの転送距離だけでみた場合、半導体装置２００から出力される電気信号をそのまま他の半導体装置２００に送信する場合と比較して、半導体装置２００から出力される電気信号の出力を小さくすることができる。従って、半導体装置２００に形成される出力用のアンプを小さくしたり、又は省略することが可能となる。実際、信号波形訛り改善のための高出力アンプ的な用途から、純な信号波形を取り出すためのインピ−ダンスマッチング回路へ変更されることになり消費電力、発熱面で大きな改善が期待できる。   The electrical signal output from the semiconductor device 200 needs to be connected in the shortest in consideration of delay and the like. However, when viewed only from the transfer distance to the optical communication module 300, the electrical signal output from the semiconductor device 200 is Compared with the case of transmitting to another semiconductor device 200 as it is, the output of the electrical signal output from the semiconductor device 200 can be reduced. Therefore, the output amplifier formed in the semiconductor device 200 can be reduced or omitted. Actually, the use of a high output amplifier for improving the signal waveform distortion is changed to an impedance matching circuit for extracting a pure signal waveform, and a great improvement in power consumption and heat generation can be expected.

また、使い方（具体的には光送受信モジュールの入出力仕様の設定）によっては既に設計済みの半導体装置に対して機能を追加しなくても、本実施形態における半導体装置２００として使用することができる。このため、半導体装置２００の開発コストが増加することをさらに抑制できる。また半導体装置２００の製造プロセスを変更する必要がないため、製造工程数が増加したり半導体装置２００の歩留まりが低下することを抑制できる。     Further, depending on the usage (specifically, setting of the input / output specifications of the optical transceiver module), the semiconductor device 200 according to this embodiment can be used without adding a function to the already designed semiconductor device. . For this reason, it can further suppress that the development cost of the semiconductor device 200 increases. Further, since there is no need to change the manufacturing process of the semiconductor device 200, it is possible to suppress an increase in the number of manufacturing steps and a decrease in the yield of the semiconductor device 200.

また本実施形態では、光通信モジュール３００は、平面視において半導体装置２００と重なっている。このため、光通信モジュール３００を設けても実装基板１００が大型化することを抑制できる。また、信号の高速化の観点から光送受信ユニットオンチップ化技術以外で、光通信モジュール３００と半導体装置２００との間の配線長を可能な限り短くするためには、例えば２ｍｍ以下と短くすることを考慮した場合、従来半導体直下に光送受信モジュ−ルを配することは代替案のない必然の技術である。   In the present embodiment, the optical communication module 300 overlaps the semiconductor device 200 in plan view. For this reason, even if the optical communication module 300 is provided, an increase in the size of the mounting substrate 100 can be suppressed. Further, in order to shorten the wiring length between the optical communication module 300 and the semiconductor device 200 as much as possible from the viewpoint of increasing the signal speed other than the optical transmission / reception unit on-chip technology, for example, shortening to 2 mm or less. In consideration of the above, it is inevitable that there is no alternative to arrange an optical transmission / reception module directly under a conventional semiconductor.

（第２の実施形態）
図６は、第２の実施形態に係る電子装置の断面図であり、第１の実施形態における図１に相当している。図７は、図６に示した電子装置における、半導体装置２００とハイブリド基板１００との接続構造を説明するための断面拡大図であり、第１の実施形態における図３に相当している。本実施形態に係る電子装置は、半導体装置２００への入力が光信号で行われる点を除いて、第１の実施形態と同様である。 (Second Embodiment)
FIG. 6 is a cross-sectional view of the electronic device according to the second embodiment, and corresponds to FIG. 1 in the first embodiment. FIG. 7 is an enlarged cross-sectional view for explaining a connection structure between the semiconductor device 200 and the hybrid substrate 100 in the electronic device shown in FIG. 6, and corresponds to FIG. 3 in the first embodiment. The electronic device according to the present embodiment is the same as that of the first embodiment except that the input to the semiconductor device 200 is performed by an optical signal.

すなわち本実施形態では、光通信モジュール３００は、光導波路１４０から受信した光信号を、そのまま半導体装置２００に送信する。ハイブリッド型の実装基板１００には光信号取込み端子凸部１１６が設けられており、半導体装置２００のインターポーザ２０４を介さずに、光信号取込み端子凹部２０６が設けられている。凸部１１６は凹部２０６にはめ込まれる。凸部１１６には光導波路が設けられており、凹部２０６の底面には光受信部２０８が設けられている。光通信モジュール３００から送信された光信号は、凸部１１６の光導波路端より、集光用マイクロレンズ２０９を通して、光信号は光導波路２１０へ効率よく伝送され、半導体装置２００の光受信部２０８の半導体チップ側端面より所定の半導体チップ上の光受信ユニットに光信号のまま送信される。   That is, in the present embodiment, the optical communication module 300 transmits the optical signal received from the optical waveguide 140 to the semiconductor device 200 as it is. The hybrid mounting substrate 100 is provided with an optical signal capturing terminal convex portion 116, and an optical signal capturing terminal concave portion 206 is provided without using the interposer 204 of the semiconductor device 200. The convex portion 116 is fitted into the concave portion 206. The convex portion 116 is provided with an optical waveguide, and the optical receiving portion 208 is provided on the bottom surface of the concave portion 206. The optical signal transmitted from the optical communication module 300 is efficiently transmitted from the end of the optical waveguide of the convex portion 116 through the condensing microlens 209 to the optical waveguide 210, and the optical receiver 208 of the semiconductor device 200 receives the optical signal. The optical signal is transmitted as it is from the end face on the semiconductor chip side to the optical receiving unit on a predetermined semiconductor chip.

なお、本実施形態においても、半導体装置２００からの出力は、電気信号により行われる。そして出力された電気信号は、光通信モジュール３００において光信号に変換される。   Also in this embodiment, the output from the semiconductor device 200 is performed by an electrical signal. The output electrical signal is converted into an optical signal in the optical communication module 300.

光受信部３６０の光電変換素子の製造プロセスは、現存するＣＣＤ製造プロセスにおいて大きさ的には問題なく、スピ−ド的には問題はあるが、回路構成の工夫や製造プロセスの工夫にて実現の可能性を検討できるレベルにあると考える。故に、発光素子の製造プロセスと比較して、従来のロジック回路やメモリ回路の製造プロセスに組み込みやすい状況に有る。従って、本実施形態によっても、第１の実施形態と同様の効果を得ることができる。また光通信モジュール３００には光受信部３６０を設ける必要がないため、光通信モジュール３００の回路構成の簡素化が実現できる。   The manufacturing process of the photoelectric conversion element of the light receiving unit 360 has no problem in size in the existing CCD manufacturing process, but there is a problem in speed, but it is realized by devising the circuit configuration and devising the manufacturing process. I think that it is at a level where the possibility of Therefore, compared with the manufacturing process of a light emitting element, it exists in the condition where it is easy to incorporate in the manufacturing process of the conventional logic circuit or memory circuit. Therefore, according to this embodiment, the same effect as that of the first embodiment can be obtained. In addition, since it is not necessary to provide the optical receiver 360 in the optical communication module 300, the circuit configuration of the optical communication module 300 can be simplified.

なお、図８の断面拡大図に示すように、信号受信のみ高速化が必要で送信信号は従来メタル配線でよい半導体装置の場合、半導体装置２００の下方には、光通信モジュール３００が設けられていなくてもよい。この場合、当該半導体装置２００は、信号の受信を光で行い、他の半導体装置２００への信号の伝達を、電気信号により行う。   As shown in the enlarged cross-sectional view of FIG. 8, in the case of a semiconductor device that requires only high-speed signal reception and the transmission signal may be a conventional metal wiring, an optical communication module 300 is provided below the semiconductor device 200. It does not have to be. In this case, the semiconductor device 200 performs signal reception using light, and transmits signals to other semiconductor devices 200 using electrical signals.

以上、図面を参照して本発明の実施形態について述べたが、これらは本発明の例示であり、上記以外の様々な構成を採用することもできる。   As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

１００ メタル、光ハイブリッド基板（実装基板）
１０２ 配線基板
１０３ プリント配線層
１０４ 遮光絶縁放熱層
１０６ 保護絶縁膜
１０７ ビア （半導体装置高速信号送信用端子列）
１０８ ビア （半導体装置高速信号受信用端子列）
１１２ 半導体装置信号送信用電極パッド
１１３ 高速信号送受信用端子以外の電極パッド（インタポ−ザ経由）
１１４ 外部接続端子
１１６ 光信号取込み端子凸部
１２０ 配線基板
１４０ 光導波路
２００ 半導体装置
２０２ 半導体チップ
２０４ インターポーザ
２０６ 光信号取込み端子凹部
２０８ 光受信部
２０９ 集光用マイクロレンズ
２１０ 光導波路
２１２ 電気信号外部接続端子（半導体装置からの高速信号線入力端子）
２１３ 電気信号外部接続端子（高速信号送受信用端子以外の端子）
２１４ 電気信号外部接続端子（半導体装置への高速信号線出力端子）
３００ 光通信モジュール
３２０ コントローラ、インタ−フェ−ス部（詳細 352、354）
３４０ 光送受信モジュ−ル部 （詳細 350、360）
３５０ 光送信モジュ−ル部
３５２ 電気信号入力インタ−フェ−ス
３５４ 光送信部コントローラ
３５５ シリコンレ−ザユニット群（20UNIT）
３５６ 光導波路インタ−フェ−ス（20UNIT）
３５７ 光変調器群（20UNIT）
３５８ 光導波路（出力）：導波管群
３５９ 光導波路（入力）：導波管群
３６０ 光受信部
３６２ 光電変換素子
３６４ 受信回路
３６６ 電気信号出力インターフェース 100 metal, optical hybrid board (mounting board)
102 Wiring board
103 Printed Wiring Layer 104 Light-shielding Insulation Heat Dissipation Layer 106 Protective Insulating Film 107 Via
108 via (terminal row for high-speed signal reception of semiconductor device)
112 Semiconductor Device Signal Transmitting Electrode Pad
113 Electrode pads other than terminals for high-speed signal transmission / reception (via interposer)
114 External connection terminal 116 Optical signal capturing terminal convex portion 120 Wiring board 140 Optical waveguide 200 Semiconductor device 202 Semiconductor chip 204 Interposer 206 Optical signal capturing terminal concave portion 208 Optical receiving portion 209 Condensing microlens 210 Optical waveguide 212 Electrical signal external connection terminal (High-speed signal line input terminal from semiconductor devices)
213 Electrical signal external connection terminal (terminal other than high-speed signal transmission / reception terminal)
214 Electrical signal external connection terminal (High-speed signal line output terminal to semiconductor device)
300 Optical communication module 320 Controller, interface (Details 352, 354)
340 Optical transceiver module (Details 350, 360)
350 Optical transmission module 352 Electric signal input interface 354 Optical transmission controller 355 Silicon laser unit group (20UNIT)
356 Optical waveguide interface (20UNIT)
357 Light modulator group (20UNIT)
358 Optical waveguide (output): Waveguide group 359 Optical waveguide (input): Waveguide group 360 Optical receiver 362 Photoelectric conversion element 364 Receiver circuit 366 Electric signal output interface

Claims (10)

少なくとも出力を電気信号で行う第１半導体装置と、
前記第１半導体装置が実装される実装基板と、
前記実装基板に実装され、前記第１半導体装置から出力された信号を受信する第２半導体装置と、
前記実装基板に設けられ、前記第１半導体装置から出力された電気信号を光信号に変換して前記第２半導体装置に送信する第１光通信部と、
を備える電子装置。 A first semiconductor device that at least outputs an electrical signal;
A mounting substrate on which the first semiconductor device is mounted;
A second semiconductor device mounted on the mounting substrate and receiving a signal output from the first semiconductor device;
A first optical communication unit that is provided on the mounting substrate, converts an electrical signal output from the first semiconductor device into an optical signal, and transmits the optical signal to the second semiconductor device;
An electronic device comprising: 請求項１に記載の電子装置において、
前記実装基板の前記第１光通信部からの光信号を光導波路を介して、前記実装基板上の第２光通信部で受信し、前記第２半導体装置へ電気信号として送信する前記第２光通信部をさらに備える電子装置。 The electronic device according to claim 1,
The second light that receives the optical signal from the first optical communication unit of the mounting substrate via the optical waveguide by the second optical communication unit on the mounting substrate and transmits it as an electrical signal to the second semiconductor device. An electronic device further comprising a communication unit. 請求項１に記載の電子装置において、
平面視において、前記第１光通信部は前記第１半導体装置と重なっている電子装置。 The electronic device according to claim 1,
In plan view, the first optical communication unit is an electronic device overlapping the first semiconductor device. 請求項２に記載の電子装置において、
平面視において、前記第１光通信部は前記第１半導体装置と重なっており、前記第２光通信部は前記第２半導体装置と重なっている電子装置。 The electronic device according to claim 2.
In plan view, the first optical communication unit overlaps the first semiconductor device, and the second optical communication unit overlaps the second semiconductor device. 請求項２又は４に記載の電子装置において、
前記第１光通信部及び前記第２光通信部を互いに接続し、前記第１半導体装置と前記第２半導体装置の間の送受信電気信号を同時に送受信光信号へ変換し、高速信号の仲介を行うための複数の信号ラインを有する電子装置。 The electronic device according to claim 2 or 4,
The first optical communication unit and the second optical communication unit are connected to each other, and a transmission / reception electrical signal between the first semiconductor device and the second semiconductor device is simultaneously converted into a transmission / reception optical signal to mediate a high-speed signal. An electronic device having a plurality of signal lines for the purpose. 請求項５に記載の電子装置において、
３つ以上の半導体装置を有しており、
複数組の前記半導体装置の間で、前記第１光通信部及び前記第２光通信部による通信が行われる電子装置。 The electronic device according to claim 5.
Has three or more semiconductor devices,
An electronic device in which communication is performed by the first optical communication unit and the second optical communication unit between a plurality of sets of the semiconductor devices. 請求項１〜６のいずれか一項に記載の電子装置において、
前記第２半導体装置は入力が光信号により行われ、
前記実装基板に設けられ、前記第１光通信部が出力した前記光信号を前記第２半導体装置に入力する光導波路をさらに備える電子装置。 In the electronic device according to any one of claims 1 to 6,
The second semiconductor device is input by an optical signal,
An electronic device further comprising an optical waveguide provided on the mounting substrate and configured to input the optical signal output from the first optical communication unit to the second semiconductor device. 第１半導体装置及び第２半導体装置が実装される実装基板であって、
前記第１半導体装置は少なくとも出力を電子信号で行い、
前記第１半導体装置の出力端子に接続する外部接続端子と、
前記外部接続端子に入力された電気信号を光信号に変換して前記第２半導体装置に送信する第１光通信部と、
を備える実装基板。 A mounting substrate on which the first semiconductor device and the second semiconductor device are mounted,
The first semiconductor device outputs at least an electronic signal;
An external connection terminal connected to the output terminal of the first semiconductor device;
A first optical communication unit that converts an electrical signal input to the external connection terminal into an optical signal and transmits the optical signal to the second semiconductor device;
A mounting board comprising: 実装基板に半導体装置間信号光通信部と光導波路による光通信機能と電源供給用および信号送信用に用いるメタル配線を積層構造として共有する実装基板。   A mounting substrate that shares an optical communication function using an inter-semiconductor signal optical communication unit and an optical waveguide, and metal wiring used for power supply and signal transmission as a stacked structure on the mounting substrate. 配線基板に光導波路及び光通信モジュールを埋設し、実装表面を平坦に整形し、その上層に遮光性、絶縁性、及び放熱性を持った層を形成した実装基板型半導体装置。
A mounting substrate type semiconductor device in which an optical waveguide and an optical communication module are embedded in a wiring substrate, a mounting surface is shaped flat, and a layer having a light shielding property, an insulating property, and a heat dissipation property is formed thereon.
JP2010184231A 2010-08-19 2010-08-19 Electronic device, package board, and package board type semiconductor device Pending JP2012043999A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106373976A (en) * 2015-07-20 2017-02-01 格罗方德半导体公司 Die-die stacking
JPWO2018198490A1 (en) * 2017-04-28 2020-03-26 国立研究開発法人産業技術総合研究所 Optoelectronic integrated circuit and computing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106373976A (en) * 2015-07-20 2017-02-01 格罗方德半导体公司 Die-die stacking
CN106373976B (en) * 2015-07-20 2020-03-06 格罗方德半导体公司 Die-die stack
JPWO2018198490A1 (en) * 2017-04-28 2020-03-26 国立研究開発法人産業技術総合研究所 Optoelectronic integrated circuit and computing device
JP7145515B2 (en) 2017-04-28 2022-10-03 国立研究開発法人産業技術総合研究所 optoelectronic integrated circuits and computing devices
US11611004B2 (en) 2017-04-28 2023-03-21 National Institute Of Advanced Industrial Science And Technology Opto-electronic integrated circuit and computing apparatus

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