JP2012015344A5 - Semiconductor device manufacturing method, substrate processing method and substrate processing apparatus - Google Patents
Semiconductor device manufacturing method, substrate processing method and substrate processing apparatus Download PDFInfo
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- JP2012015344A5 JP2012015344A5 JP2010150778A JP2010150778A JP2012015344A5 JP 2012015344 A5 JP2012015344 A5 JP 2012015344A5 JP 2010150778 A JP2010150778 A JP 2010150778A JP 2010150778 A JP2010150778 A JP 2010150778A JP 2012015344 A5 JP2012015344 A5 JP 2012015344A5
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- gas
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Claims (5)
シリコン含有窒化膜を形成する工程は、
基板に対してシラン系ガスを供給する工程と、
前記基板に対して窒化ガスを供給する工程と、
前記基板に対してアミン系ガスを供給する工程と、
を有し、
前記アミン系ガスを供給する工程は、前記シラン系ガスを供給する工程及び前記窒化ガスを供給する工程のうち少なくともいずれかの工程と同時に行う半導体装置の製造方法。 A method of manufacturing a semiconductor device, comprising the step of forming a silicon-containing nitride film on a substrate,
The step of forming the silicon-containing nitride film is
And as factories you supply a silane gas to the substrate,
And as factories you supply a nitriding gas to the substrate,
And as factories you supply an amine gas to the substrate,
Have,
The method for manufacturing a semiconductor device performed simultaneously with at least one of steps of the step of supplying step and the nitriding gas to supply the silane gas supplying the amine-based gas.
シリコン含有窒化膜を形成する工程は、 The step of forming the silicon-containing nitride film is
基板に対してシラン系ガスを供給する工程と、 Supplying a silane based gas to the substrate;
前記基板に対して窒化ガスを供給する工程と、 Supplying a nitriding gas to the substrate;
前記基板に対してアミン系ガスを供給する工程と、 Supplying an amine-based gas to the substrate;
を有し、 Have
前記アミン系ガスを供給する工程は、前記シラン系ガスを供給する工程及び前記窒化ガスを供給する工程のうち少なくともいずれかの工程と同時に行う基板処理方法。 The step of supplying the amine-based gas may be performed simultaneously with at least one of the step of supplying the silane-based gas and the step of supplying the nitriding gas.
前記処理室内にシラン系ガスを供給する第１ガス供給系と、 A first gas supply system for supplying a silane-based gas into the processing chamber;
前記処理室内に窒化ガスを供給する第２ガス系と、 A second gas system for supplying a nitriding gas into the processing chamber;
前記処理室内にアミン系ガスを供給する第３ガス供給系と、 A third gas supply system for supplying an amine-based gas into the processing chamber;
前記処理室内の基板に対して前記シラン系ガスを供給する処理と、前記処理室内の前記基板に対して前記窒化ガスを供給する処理と、前記処理室内の前記基板に対して前記アミン系ガスを供給する処理と、を行うことで、前記基板上にシリコン含有窒化膜を形成し、前記アミン系ガスを供給する処理を、前記シラン系ガスを供給する処理及び前記窒化ガスを供給する処理のうち少なくともいずれかの処理と同時に行うよう前記第１ガス供給系、前記第２ガス系および前記第３ガス供給系を制御する制御部と、 A process of supplying the silane gas to the substrate in the process chamber, a process of supplying the nitriding gas to the substrate in the process chamber, and an amine gas to the substrate in the process chamber Performing a process of supplying a silicon-containing nitride film on the substrate and performing a process of supplying the amine-based gas, a process of supplying the silane-based gas, and a process of supplying the nitriding gas A control unit configured to control the first gas supply system, the second gas system, and the third gas supply system to perform simultaneously with at least one of the processes;
を有する基板処理装置。 Substrate processing apparatus having:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010150778A JP2012015344A (en) | 2010-07-01 | 2010-07-01 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010150778A JP2012015344A (en) | 2010-07-01 | 2010-07-01 | Method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012015344A JP2012015344A (en) | 2012-01-19 |
| JP2012015344A5 true JP2012015344A5 (en) | 2013-08-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010150778A Pending JP2012015344A (en) | 2010-07-01 | 2010-07-01 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012015344A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5869923B2 (en) * | 2012-03-09 | 2016-02-24 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
| JP6035166B2 (en) | 2013-02-26 | 2016-11-30 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
| JP5847783B2 (en) | 2013-10-21 | 2016-01-27 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
| JP6055879B1 (en) | 2015-08-05 | 2016-12-27 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
| JP6594804B2 (en) | 2016-03-11 | 2019-10-23 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing apparatus, and program |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03250626A (en) * | 1990-01-30 | 1991-11-08 | Mitsubishi Electric Corp | Forming method for thin film |
| JP2001168092A (en) * | 1999-01-08 | 2001-06-22 | Toshiba Corp | Semiconductor device and its manufacturing method |
| JP2005210076A (en) * | 2003-12-25 | 2005-08-04 | Semiconductor Leading Edge Technologies Inc | Deposition method of silicon nitride film, and manufacturing method of semiconductor device using the deposition method |
| JP4470023B2 (en) * | 2004-08-20 | 2010-06-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Method for manufacturing silicon nitride film |
| US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
| JP4924437B2 (en) * | 2007-02-16 | 2012-04-25 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
-
2010
- 2010-07-01 JP JP2010150778A patent/JP2012015344A/en active Pending
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