JP2012015343A - プラズマエッチング方法 - Google Patents
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- JP2012015343A JP2012015343A JP2010150710A JP2010150710A JP2012015343A JP 2012015343 A JP2012015343 A JP 2012015343A JP 2010150710 A JP2010150710 A JP 2010150710A JP 2010150710 A JP2010150710 A JP 2010150710A JP 2012015343 A JP2012015343 A JP 2012015343A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000001020 plasma etching Methods 0.000 title claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims description 43
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 22
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 37
- 239000007795 chemical reaction product Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】本発明は、多層レジストマスクを用いて、被エッチング膜をプラズマエッチングするプラズマエッチング方法において、前記多層レジストマスクは、上層レジストと無機膜系中間膜と下層レジストを含み、前記下層レジストの側壁に側壁保護膜を形成する側壁保護膜形成工程を有することを特徴とするプラズマエッチング方法である。
【選択図】 図3
Description
図2〜図3は、上述した図1のようなUHFプラズマエッチング装置を用いて、有機系膜である上層レジスト膜201,無機系中間膜202,有機系膜である下層レジスト膜203からなる多層レジストをマスクとしてシリコン酸化膜204をプラズマエッチングした例を示したものである。
本実施例は下層レジスト膜203をエッチングした後、SiCl4とHBrからなる混合ガスを用いて下層レジスト膜203の側壁に側壁保護膜形成を実施した例である。
本実施例は下層レジスト膜203をエッチングした後、SiCl4とCH2F2からなる混合ガスを用いて下層レジスト膜203の側壁に側壁保護膜形成を実施した例である。下層レジスト膜203のパターン形成までは実施例1と同じであるため省略する。
本実施例はシリコン酸化膜204のエッチングが、フロロカーボン系を含んだ混合ガスを用いてシリコン酸化膜204をエッチングする工程とHBrとN2からなる混合ガスを用いて下層レジスト膜203の側壁に側壁保護膜206を形成する工程とフロロカーボン系を含んだ混合ガスを用いてシリコン酸化膜204をエッチングする工程の3工程からなる例である。下層レジスト膜203のパターン形成までは実施例1と同じであるため省略する。下層レジスト膜203のパターン形成後(図2(c))、該下層レジスト膜203をマスクとし、SF6及びCHF3からなる混合ガスを用いてシリコン酸化膜204をある所定の深さ(シリコン基板205に到達しない深さ)までエッチングした。次に、表5に示すようなHBrとN2からなる混合ガスを用いて下層レジスト膜203の側壁に側壁保護膜形成を実施した。表5に示す条件で側壁保護膜を形成した下層レジスト膜203をマスクとし、残りの深さのシリコン酸化膜204のエッチングを行った結果、パターンが倒壊することなく、ラインウィグリングやストライエーションを防止した異方性の良好なエッチング形状を得ることができた。
102 UHF透過板
103 ソレノイドコイル
104 プラズマ
105 ウエハ
106 静電吸着電源
107 下部電極
108 高周波電源
201 上層レジスト膜
202 無機系中間膜
203 下層レジスト膜
204 シリコン酸化膜
205 シリコン基板
206 側壁保護膜
Claims (4)
- 多層レジストマスクを用いて、被エッチング膜をプラズマエッチングするプラズマエッチング方法において、
前記多層レジストマスクは、上層レジストと無機膜系中間膜と下層レジストを含み、
前記下層レジストの側壁に側壁保護膜を形成する側壁保護膜形成工程を有することを特徴とするプラズマエッチング方法。 - 請求項1記載のプラズマエッチング方法において、
前記側壁保護膜形成工程を前記下層レジストエッチング工程後に行うことを特徴とするプラズマエッチング方法。 - 請求項1記載のプラズマエッチング方法において、
前記側壁保護膜形成工程は、CHF3とN2とSiCl4を含む混合ガスのプラズマにより行われることを特徴とするプラズマエッチング方法。 - 請求項1記載のプラズマエッチング方法において、
前記側壁保護膜形成工程を前記下層レジストエッチング工程後に行われ、かつCHF3とN2とSiCl4を含む混合ガスのプラズマにより行われることを特徴とするプラズマエッチング方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010150710A JP2012015343A (ja) | 2010-07-01 | 2010-07-01 | プラズマエッチング方法 |
KR1020100072325A KR101203914B1 (ko) | 2010-07-01 | 2010-07-27 | 플라즈마 에칭방법 |
TW099125078A TW201203348A (en) | 2010-07-01 | 2010-07-29 | Plasma etching method |
US12/855,265 US20120003838A1 (en) | 2010-07-01 | 2010-08-12 | Plasma etching method |
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JP2010150710A JP2012015343A (ja) | 2010-07-01 | 2010-07-01 | プラズマエッチング方法 |
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JP2012015343A true JP2012015343A (ja) | 2012-01-19 |
JP2012015343A5 JP2012015343A5 (ja) | 2013-06-27 |
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JP2010150710A Pending JP2012015343A (ja) | 2010-07-01 | 2010-07-01 | プラズマエッチング方法 |
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US (1) | US20120003838A1 (ja) |
JP (1) | JP2012015343A (ja) |
KR (1) | KR101203914B1 (ja) |
TW (1) | TW201203348A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014127475A (ja) * | 2012-12-25 | 2014-07-07 | Hitachi High-Technologies Corp | 半導体装置の製造方法 |
KR20170034346A (ko) | 2015-09-18 | 2017-03-28 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 방법 및 드라이 에칭제 |
JP2017168870A (ja) * | 2017-06-22 | 2017-09-21 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
KR20180128943A (ko) | 2016-03-29 | 2018-12-04 | 도쿄엘렉트론가부시키가이샤 | 피처리체를 처리하는 방법 |
KR20200011888A (ko) | 2018-07-25 | 2020-02-04 | 도쿄엘렉트론가부시키가이샤 | 하드 마스크용 막을 형성하는 방법 및 장치, 및 반도체 장치의 제조 방법 |
US10763123B2 (en) | 2016-03-29 | 2020-09-01 | Tokyo Electron Limited | Method for processing workpiece |
US11599024B2 (en) | 2019-02-21 | 2023-03-07 | Samsung Display Co., Ltd. | Photopolymerizable resin composition, display device using same, and manufacturing method thereof |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9117764B2 (en) * | 2010-08-27 | 2015-08-25 | Tokyo Electron Limited | Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element |
KR102106256B1 (ko) | 2013-07-03 | 2020-05-04 | 삼성전자 주식회사 | 포토 마스크 및 그 제조 방법 |
KR102375256B1 (ko) * | 2017-05-26 | 2022-03-16 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
DE102017128070B4 (de) | 2017-08-31 | 2023-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ätzen zum Verringern von Bahnunregelmässigkeiten |
US10475700B2 (en) * | 2017-08-31 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etching to reduce line wiggling |
Citations (4)
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JPH0372087A (ja) * | 1989-08-10 | 1991-03-27 | Toshiba Corp | ドライエッチング方法 |
JPH088233A (ja) * | 1994-06-17 | 1996-01-12 | Texas Instr Japan Ltd | 半導体装置の製造方法及びこの方法に用いる処理液 |
US20080038927A1 (en) * | 2003-06-27 | 2008-02-14 | Yoko Yamaguchi | Method for multi-layer resist plasma etch |
JP2008505490A (ja) * | 2004-06-30 | 2008-02-21 | ラム リサーチ コーポレーション | プラズマ処理システムにおけるエッチング耐性を最適にする方法および装置 |
Family Cites Families (3)
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US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US7981810B1 (en) * | 2006-06-08 | 2011-07-19 | Novellus Systems, Inc. | Methods of depositing highly selective transparent ashable hardmask films |
US20100330805A1 (en) * | 2007-11-02 | 2010-12-30 | Kenny Linh Doan | Methods for forming high aspect ratio features on a substrate |
-
2010
- 2010-07-01 JP JP2010150710A patent/JP2012015343A/ja active Pending
- 2010-07-27 KR KR1020100072325A patent/KR101203914B1/ko not_active IP Right Cessation
- 2010-07-29 TW TW099125078A patent/TW201203348A/zh unknown
- 2010-08-12 US US12/855,265 patent/US20120003838A1/en not_active Abandoned
Patent Citations (4)
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JPH0372087A (ja) * | 1989-08-10 | 1991-03-27 | Toshiba Corp | ドライエッチング方法 |
JPH088233A (ja) * | 1994-06-17 | 1996-01-12 | Texas Instr Japan Ltd | 半導体装置の製造方法及びこの方法に用いる処理液 |
US20080038927A1 (en) * | 2003-06-27 | 2008-02-14 | Yoko Yamaguchi | Method for multi-layer resist plasma etch |
JP2008505490A (ja) * | 2004-06-30 | 2008-02-21 | ラム リサーチ コーポレーション | プラズマ処理システムにおけるエッチング耐性を最適にする方法および装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014127475A (ja) * | 2012-12-25 | 2014-07-07 | Hitachi High-Technologies Corp | 半導体装置の製造方法 |
KR20170034346A (ko) | 2015-09-18 | 2017-03-28 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 방법 및 드라이 에칭제 |
US9929021B2 (en) | 2015-09-18 | 2018-03-27 | Central Glass Company, Limited | Dry etching method and dry etching agent |
KR20180128943A (ko) | 2016-03-29 | 2018-12-04 | 도쿄엘렉트론가부시키가이샤 | 피처리체를 처리하는 방법 |
US10763123B2 (en) | 2016-03-29 | 2020-09-01 | Tokyo Electron Limited | Method for processing workpiece |
JP2017168870A (ja) * | 2017-06-22 | 2017-09-21 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
KR20200011888A (ko) | 2018-07-25 | 2020-02-04 | 도쿄엘렉트론가부시키가이샤 | 하드 마스크용 막을 형성하는 방법 및 장치, 및 반도체 장치의 제조 방법 |
US10879069B2 (en) | 2018-07-25 | 2020-12-29 | Tokyo Electron Limited | Method and apparatus for forming hard mask film and method for manufacturing semiconductor devices |
US11599024B2 (en) | 2019-02-21 | 2023-03-07 | Samsung Display Co., Ltd. | Photopolymerizable resin composition, display device using same, and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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US20120003838A1 (en) | 2012-01-05 |
KR20120002900A (ko) | 2012-01-09 |
KR101203914B1 (ko) | 2012-11-23 |
TW201203348A (en) | 2012-01-16 |
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