JP2012000629A - Connection material, semiconductor device, and method for manufacturing same - Google Patents
Connection material, semiconductor device, and method for manufacturing same Download PDFInfo
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- JP2012000629A JP2012000629A JP2010136743A JP2010136743A JP2012000629A JP 2012000629 A JP2012000629 A JP 2012000629A JP 2010136743 A JP2010136743 A JP 2010136743A JP 2010136743 A JP2010136743 A JP 2010136743A JP 2012000629 A JP2012000629 A JP 2012000629A
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- connection
- connection material
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- semiconductor device
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- H—ELECTRICITY
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
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Abstract
Description
本発明は、良好な濡れ性が得られ、耐熱性に優れ、高信頼が得られる鉛フリー接続材料による接続技術に関するものである。 The present invention relates to a connection technique using a lead-free connection material that provides good wettability, excellent heat resistance, and high reliability.
パワーモジュールは、インバータ駆動による省エネルギー化が可能であるため、近年、需要が増大している。また、家電に限らず、ハイブリッドおよび電気自動車や風力発電等発電機器の大電力制御にも適用先が広がりつつある。それに伴い、従来のSi半導体に比べて、大電流を通電して素子が高温になっても動作が可能なSiC、GaN半導体の実用化も検討されている。そのため、SiCやGaN半導体のダイボンディングに適した接続材料が必要となっている。SiCおよびGaN半導体は200℃以上の高温下で使用される可能性があるが、今のところ、これらの素子を接続する汎用的な接続材料は高鉛はんだ以外ないが、高鉛はんだは鉛を85mass%以上含むため非常に環境負荷が大きいという問題がある。また、高鉛はんだは融点が約300℃であるため、250℃以上の温度では界面反応を抑制できず、空隙等が顕著に生成して接続を維持できない。そのため、高鉛はんだ以上の耐熱性を有する高耐熱の鉛フリー接続技術の開発が必要となっている。高耐熱の鉛フリー接続材料の候補としては、焼成型Agペーストや融点300℃以上のAu系はんだ、Zn系はんだが挙げられる。しかしながら、焼成型Agペーストの場合、高コスト、従来のハンダに比べて供給方法等の作業性が悪いといった問題がある。また、Au系はんだの場合、焼成型Agペーストより更に高コストであり、汎用的に使用することが難しい。Zn系はんだの場合、Alを含まないZn系はんだは部材との反応性が高く、150℃以上の温度下で顕著に界面反応が進み接続を維持することができない。また、Zn-Al系はんだの場合、はんだ周辺部にAl酸化物の膜が生成することで被接続材に濡れないという問題があった。接続材料のAl酸化膜による濡れ阻害を回避する手段として特許文献1がある。特許文献1ではZn-Al合金の濡れ性を改善するために、Al箔表面にZnをクラッドしている。クラッドの際に、圧延等の加工でAlが大変形して表面のAl酸化膜が破られることで、露出した新生面同士が接続される。クラッド後の材料表面には濡れを阻害するAl酸化物の膜が無いこと、材料内部のAl酸化膜は、破れた状態を維持するため、接続時に良好な濡れを確保することができる。
In recent years, the demand for power modules has been increasing because they can save energy by driving an inverter. In addition, not only home appliances but also application destinations are spreading to high power control of hybrid and electric vehicles and power generation equipment such as wind power generation. Along with this, the practical application of SiC and GaN semiconductors, which can operate even when the device is heated to a high current by passing a large current compared to conventional Si semiconductors, is being studied. Therefore, connection materials suitable for die bonding of SiC and GaN semiconductors are required. SiC and GaN semiconductors may be used at high temperatures of 200 ° C or higher, but at present there is no other general-purpose connection material to connect these devices, but high lead solder uses lead. There is a problem that the environmental load is very large because it contains 85 mass% or more. In addition, since the melting point of high lead solder is about 300 ° C., the interface reaction cannot be suppressed at a temperature of 250 ° C. or higher, and the connection cannot be maintained due to the formation of voids or the like. Therefore, it is necessary to develop a high heat resistance lead-free connection technology having heat resistance higher than that of high lead solder. Candidates for high heat-resistant lead-free connection materials include fired Ag paste, Au solder having a melting point of 300 ° C. or higher, and Zn solder. However, calcined Ag paste has problems such as high cost and poor workability such as a supply method compared to conventional solder. In addition, in the case of Au-based solder, it is more expensive than a fired Ag paste and is difficult to use for general purposes. In the case of Zn-based solder, Zn-based solder not containing Al has high reactivity with the member, and the interface reaction is remarkably advanced at a temperature of 150 ° C. or higher, and the connection cannot be maintained. In addition, in the case of Zn—Al solder, there is a problem that an Al oxide film is formed around the solder so that the material to be connected does not get wet. As a means for avoiding the inhibition of wetting by the Al oxide film of the connection material, there is
しかしながら、使用環境の最高温度を250℃より下に想定していても、装置の稼動状況により一時的に250℃を超えてしまうことがあり、上記特許文献1の方法の場合、高い接続信頼性を確保するために、以下のことが考慮されていなかった。特許文献1の場合、図1のように、半導体素子1と支持部材2をZn-Al層4を介して接続した後、軟らかいAl層3を残存させることで接続部に応力緩衝能を付与する。図2は、250℃で保持時間とAl層のビッカース硬さの関係を示したものである。0hは接続後の硬さを示すが、このときAl層は、点線で示した接続を担うZn-Al合金層に比べて軟らかく、応力緩衝機能を有している。しかしながら、250℃250h保持後には、接続を担うZn-Al合金層より硬くなり応力緩衝能が失われてしてしまう。これは、高温下でAl層中にZnが拡散して、Al層が固溶強化することが原因である。すなわち、一時的にでも250℃以上の温度に晒されることで、常用する250℃より下の使用環境における応力緩衝機能も低下してしまう。
However, even if the maximum temperature of the use environment is assumed to be lower than 250 ° C., the temperature may temporarily exceed 250 ° C. depending on the operation status of the apparatus. In order to ensure the following, the following were not considered. In the case of
本発明は、上記のような問題を解決するためになされたものであり、濡れ性が確保でき、耐熱性が高く、応力緩衝機能を有する高信頼な接続材料を提供することを目的としている。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a highly reliable connection material that can ensure wettability, has high heat resistance, and has a stress buffering function.
上記課題を解決するために、接続に用いる最表面をZn系層にするとともに、特許文献1では大きな塊であったAl層を、複数の小さなAl相に分割した。これによって、接続時のAlの応力緩衝機能は若干落ちるものの、Znが浸入してAlが硬化した後の接続材料の応力緩衝機能の低下を抑え、実使用時の信頼性を確保することができようにした。
In order to solve the above problems, the outermost surface used for connection is a Zn-based layer, and the Al layer that was a large lump in
本発明によれば、濡れ性が確保でき、耐熱性が高く、接続時の熱応力に対しても、使用時の熱応力に対しても緩衝可能な高信頼な接続材料を得ることができる。 According to the present invention, it is possible to obtain a highly reliable connection material that can ensure wettability, has high heat resistance, and can buffer both thermal stress during connection and thermal stress during use.
本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described with reference to the drawings.
図4は本発明の実施例にかかる接続材料の断面図である。接続材料は、部材を接続するための、図面上側の第一の面と、図面下側の第二の面とを有している。大部分をしめるZn系層5は、第一の面および第二の面とを形成しており、その間に複数のAl系相3の粒が浮き島状に点在している。地点10では、第一の面から第二の面までZn系層5が延在し、地点11では、表面はZn系層5であるが、間にAl系相3を有している。
FIG. 4 is a cross-sectional view of a connection material according to an embodiment of the present invention. The connecting material has a first surface on the upper side of the drawing and a second surface on the lower side of the drawing for connecting the members. The Zn-based
図8は、接続材料の製造方法を示す図である。複数のAl系相3の金属片(または粉末)を第一及び第二のZn系層5の二枚に挟み込み圧延(クラッド圧延)をすることによって、Al系相3およびZn系層4が変形して、各々の表面に形成された酸化膜が破れ、新生面同士を金属接合させることができる。Al系相3は金属片であるため、複数に分かれてZn層4中に浮島上に分布するとともに、二枚のZn系層4は直接接合される。圧延としては、冷間圧延、熱間圧延を用いることができ、それ以外では加圧成形によっても製造できる。
FIG. 8 is a diagram illustrating a method for manufacturing a connection material. The
図5の半導体装置では、この接合材を溶融・凝固させて、半導体素子1と基板2とを接続した状態である。Al系相とZn−Al系層5内に浮島上に分布している。接続は、半導体素子1と基板2との間に接続材を載置し、リフロー処理より行う。リフロー処理にて、加熱を行うとZn系層4が溶融し、冷却すると凝固して半導体素子1と基板とが接続される。このとき、Al系相3は固まったままであるが、その一部がZn系層5内に溶け出してZn-Al系合金層4となっている。
In the semiconductor device of FIG. 5, this bonding material is melted and solidified to connect the
作用効果を説明する。本実施例では、接続前に置いて接続材料の最表層がZn系層5であり、Alではないため、Al酸化物の膜で覆われない。そのため、酸化膜による濡れの阻害が発生せず、接続の際に良好な濡れが得られる。Zn系層5は、Znの含有率が90〜100mass%であり、Alの含有率が0.01mass%未満が望ましい。
The effect will be described. In this embodiment, the outermost layer of the connection material is the Zn-based
接続後には、図5のようにAl系相3が部分的に残存する。接続時には、Zn-Al系合金層4は、加熱溶融状態から温度を下げていくと、その凝固点で凝固し、その時点で半導体素子1と基板2が接続される。凝固点から上の温度では、接続材料が溶融状態であるため、熱応力の問題は発生しない。しかしながら、凝固点から常温までさらに温度を下げていくと、凝固して固体となっている接続材料には、半導体素子1と基板2との熱膨張率の差によって大きな熱応力がかかる。本実施例では、接続材料中に比較的軟らかいAl系相3が存在するため、このときの熱応力をAl系相3が吸収し、Al系相3がない場合に比べて熱応力による影響が小さくなる。
After the connection, the
前述の通り、Al系相3は、接続後の使用時に250℃以上の高温下に晒されてZnが浸入し、硬化してZn-Al系層5よりも硬くなると問題を有している。本実施例では、硬化するAl系相3は浮島状の部分となり、個々の体積は小さくなっているため、Al系相3が硬化しても、接続材料全体としても硬化は大きくない。対して特許文献1のように層全体が大きな一塊のAlである場合は、Al層が硬化すると接続材料全体の柔軟性が著しく低下する。したがって本実施例では、接続材料の硬化を抑制することができる。それでも250℃以上の温度ではAl系相3が硬化することにより、接続材料全体としても応力緩衝機能が低下してしまうが、使用時の温度は、400℃前後といった接続材料が溶融する接続時ほど高温では無いので、十分に耐えることができる。そのため、常用する約250℃までの使用温度下では、高い信頼性が得られる。
As described above, the Al-based
また、図4のように、接続材料の内部に複数の浮島状Al系相3を有しており、これが接続時でも固体として存在する。そのため、Al系相3が接続部の傾きを抑制するスペーサとして機能し、図3のように半導体素子1が傾いて接続されるのを防ぐことができる。傾きが生じると、薄く潰れた接続部に応力が集中するため、傾きの無い場合に比べて破壊が速く進行してしまう。高温下でパワー半導体を使用する場合、使用時の温度変化が大きく熱衝撃が大きくなるため、接続部の傾きを小さくして応力集中部を無くすことが重要になる。図1のように、Alが残存する場合、Al層3が傾き防止のスペーサとして機能するため、接続部の傾きがないまたは小さく維持することができる。
Moreover, as shown in FIG. 4, the connection material has a plurality of floating island-like Al-based
Alの硬化を防止するために、接続の際にAl層を完全に反応させて接続部を全てZn-Al合金にする方法も可能である。この場合、保持前はAl層が残存する接続に比べて硬いが、250℃以上の温度で保持しても、保持前から大きく硬化が進行しない。 In order to prevent the hardening of Al, a method in which the Al layer is completely reacted at the time of connection to make all the connection portions into a Zn—Al alloy is also possible. In this case, it is harder than the connection in which the Al layer remains before holding, but even if it is held at a temperature of 250 ° C. or higher, the hardening does not proceed greatly from before holding.
もしAl系相3の代わりに、浮島状のCuやAg、Ni等6をZn系層4と複合化した場合、図6のように、Znと著しく反応して接続部内部に硬くて脆い金属間化合物7を形成するため、応力緩衝能が低減し信頼性を損なう恐れがある。Zn系層4とAl系相3の組合せで接続材料を形成した場合、Al中にZnが拡散して固溶強化するのみにとどまり、脆い金属間化合物を形成しないため、脆性破壊しない。
If instead of Al-based
また、Al系相3が存在することで、接続の際に溶融した液相を介してAl系相3からAlが拡散し、接続対象物またはその表面に形成されたメタライズ層との接続界面にAlを主成分(最も含有量の多い元素)とする金属間化合物(Cu部材であれば、Cu-Al化合物、Ni部材であれば、Ni-Al化合物)を生成することができる。これらの金属間化合物はZnを主成分とする金属間化合物に比べて、高温下で成長が遅いため、良好な接続を維持することができる。
In addition, the presence of the Al-based
接続前のZn系層5に含まれるAlは0.01mass%未満が望ましい。これ含有量ならば、接続材料表面のAl酸化物膜の量が多すぎず、良好な濡れが得られる。
Al contained in the Zn-based
接続前におけるAl系相3のAl含有率が99〜100mass%であることが望ましい。
It is desirable that the Al content of the
一般的に、Alの純度が100mass%に近づくほど軟らかくなり、応力緩衝機能を得ることが容易になる。一方、Al純度が99mass%以上の場合、硬さが小さくなり0.2%耐力が低くなるため、接続工程における冷却時に十分な応力緩衝機能を得ることができる。このときの0.2%耐力は、30N/mm2以下になることが望ましい。 Generally, the closer the purity of Al is to 100 mass%, the softer it becomes and it becomes easier to obtain a stress buffering function. On the other hand, when the Al purity is 99 mass% or more, the hardness decreases and the 0.2% yield strength decreases, so that a sufficient stress buffering function can be obtained during cooling in the connection process. The 0.2% proof stress at this time is desirably 30 N / mm 2 or less.
また、接続前におけるAl系相3の平均径は、50μm以上にすることが好ましい。接続材料の融点が約380℃であるため、400℃近傍で接続される。平均径が50μm以上の場合、接続時の加熱によってAl系相3中全域にZnが拡散して固溶強化しづらく、接続工程における冷却による熱応力を十分に緩衝でき、チップクラック発生を防止することができる。
The average diameter of the
接続前における接続材料に対するAl系相3部分が6mass%より高く、25mass%未満であることが望ましい。
It is desirable that the Al-based
図7にAl-Zn2元系状態図を示す。Zn-Al共晶組成が6mass%Alであるので、Al系相3部分が6mass%以上の場合、接続時にAl系相3が全て溶解するわけではないため、Al系相3部分をスペーサとして利用することができる。また、Al系相3部分が1mass%以上の場合、接続時に耐熱性を発現するために十分なAlを主成分とする金属間化合物が一旦接続部界面に形成し、金属間化合物の不足により接続界面化合物から遊離してしまうことを防ぐことができる。また、Al系合金部分が25mass%未満では、接続部の50%以上が250℃以下で硬化するため、応力は十分に緩衝できる大きさとなる。
FIG. 7 shows an Al—Zn binary phase diagram. Since the Zn-Al eutectic composition is 6 mass% Al, if the
接続前の接続材料は、Zn系層5に覆われたAl系相3の周囲80%以上がAl酸化物の膜を介さずに、Zn系層5とAl系相3とが接続していることが望ましい。
As for the connection material before connection, the Zn-based
Zn系層5とAl系相3がAl酸化物を介して接続している場合、Al酸化物の膜が脆いため、熱衝撃等が生じた際に剥離の起点となる。Al系合金の周囲20%未満がAl酸化物の膜で覆われている場合、剥離の発生部が増加しても、接続部の接続信頼性は保つことができる。
When the Zn-based
接続材料の製造方法としては、Zn系層5間に複数のAl系相3の金属片を挟み込み圧延することにより、Zn系層4間、Zn系層4とAl系相3間を接続する。このとき圧延の加工度を90%以上にすることが望ましい。圧延の加工度が90%以上の場合、変形が小さく接続界面の酸化物膜残存面積が多い等の理由により、未接続界面が多くなる可能性が小さく、接続時の加熱によって、図9のように未接続部界面に膨れ101が発生して、半導体素子を接続した後にボイド等の接続欠陥の不良となることを防ぐことができる。
As a manufacturing method of the connection material, a plurality of Al-based
圧延としては、2つのZn系層4間にAl系相3の粉末を挟み込み熱間圧延することが望ましい。
As the rolling, it is desirable to sandwich the Al-based
Al系粉末をZn系層に挟み込み冷間圧延をすることによって、Al系粉末およびZn系層が変形して各々の部材表面に形成された酸化膜が破れ、新生面同士を金属接合させることができる。熱間圧延では冷間圧延に比べて、高温下で拡散が速いため、新生面同士の接続が容易となる。そのため、圧延の加工度を容易に90%以上にすることができ、良好な部材間の接続ができる。 By sandwiching the Al-based powder in the Zn-based layer and performing cold rolling, the Al-based powder and the Zn-based layer are deformed to break the oxide film formed on the surface of each member, and the new surfaces can be metal-bonded to each other. . In hot rolling, compared to cold rolling, diffusion is fast at high temperatures, so that the new surfaces can be easily connected. Therefore, the workability of rolling can be easily increased to 90% or more, and a good connection between members can be achieved.
なお、本実施例では、接続材料は、半導体素子1と基板2とを接続しているが、これに限らず、二つ以上の部材を接続するものであればよく、たとえば、半導体素子とリードや電極を接続したり、電極同士を接続してもよい。
In the present embodiment, the connection material connects the
なお、本発明や特許文献1にかかる接続材料は、一例としては、図14の写真のようにリボン状の接続材料201に形成され、リール202に巻かれて供給される。
(実施例1−17)
以下、本発明をパワー半導体モジュールに適用した実施例について、図10を用いて説明する。
As an example, the connection material according to the present invention and
(Example 1-17)
Hereinafter, an embodiment in which the present invention is applied to a power semiconductor module will be described with reference to FIG.
窒化珪素の上面にCu配線、下面にCu板をロウ付けし、Cu板表面にNiめっきを施した40mm×20mmセラミックス基板9上に、図13の仕様であるZn系層とAl系金相からなる接続材料箔を置き、その上にTi/Ni/Auのメタライズを有する10mm×10mmの半導体素子1を積層し、素子上におもしを置き、N2雰囲気中、400℃5min.で接続を行った。接続材料は、いずれもZn系層中にAl系相が多数浮遊状態で含有されており、Al系相の割合と接続材料の厚さが異なっている。ワイヤボンディング8を行った素子付基板を表1の仕様であるZn系合金とAl系合金からなる接続材料箔で支持部材2に接続し、接続部周辺を樹脂封止することにより、パワー半導体モジュールを作製した。
From the Zn-based layer and the Al-based gold phase shown in FIG. 13 on a 40 mm × 20 mm ceramic substrate 9 in which a Cu wiring is brazed on the upper surface of silicon nitride, a Cu plate is brazed on the lower surface, and Ni plating is applied to the surface of the Cu plate. A 10 mm x 10
これらのパワー半導体モジュールについて、組立時の接続状況を調査し、250℃1000hの高温保持試験を実施後、-40℃⇔250℃の温度サイクル試験を実施し、それぞれの試験後に接続状況を調査した。組立時の接続状況については、未接続と組立時の部材のNiメタライズ食われを調査した。その結果、未接続が接続面積の20%未満であるときを○、20%以上のときを×、Niメタライズが残存するときを○、消失したときを×とした。実施例1-17について、これらを評価した結果、何れにおいても未接続面積が20%未満であり、図11のように、セラミックス基板9上のCu板104の上に形成されたNiメタライズ103が残存しており、その上にAl系相3のAlに由来するNi-Al系化合物102が生成していた。250℃1000hの高温保持試験については、部材のNiメタライズの残存状況および接続部の硬化について調査した。1000h後に部材のNiメタライズが残存し、接続が維持できていた場合を○、消失した場合を×、接続部の硬さが、接続直後から20%未満の硬化の場合を○、20%以上の場合を×とした。実施例1-17について評価した結果、何れの場合も250℃1000h後において、接続界面のNi-Al系化合物の成長は少なく、部材のNiメタライズは消失せずに残存していた。また、接続部についてもAl系合金相のある箇所では硬化が進んでいたが、全体的な接続部の硬化は接続後の20%未満であった。温度サイクル試験については、温度サイクル試験による素子割れの発生状況、素子接続部の接続維持面積を調査した。素子割れが発生しない場合を○、発生した場合を×、素子接続面積が初期の80%以上を維持した場合を○、80%未満となった場合を×とした。実施例1-17において何れにおいても、素子割れは発生せず、接続面積も初期の80%以上を維持することができた。また、接続部断面を観察した結果、素子両端部の接続部厚さの差が30μm未満であり、傾きを小さく制御できていることが確認できた。なお、上記では半導体素子の接続とセラミックス基板の接続を別プロセスで組立てる方法について述べたが、半導体素子1、接続材料、セラミックス基板9、接続材料、支持部材2を積層した後、一度のプロセスで接続し、そのワイヤボンディングを実施しても良い。
(比較例1、2)
上記の実施例1-17と同様のプロセスでパワー半導体モジュールの組立を実施した。接続材料は、接続前から固溶したZn-Al系合金であり、Al相は存在しない。また、同様に接続後の接続状態を調査した。その結果、表1のようにZn-4AlおよびZn-6Al何れの場合も接続部の80%以上が未接続となった。これは、接続前から接続材料の表面がZn-Al系合金となっていたため、Alが酸化してしまい、濡れ性が確保できなかったためと考えられる。接続ができなかったため、接続信頼性評価は実施できなかった。
(比較例3)
上記の実施例1-17と同様のプロセスでパワー半導体モジュールの組立を実施した。また、同様に接続後の接続状態を調査した。接続材料は、ほぼ純粋なZnのみとなっている。その結果、表1のように、純Znでは接続部の80%以上の面積で接続できたが、接続界面において、Znと部材間の反応が進み、Niメタライズが消失して、Znと下地部材(Cu板)が反応していた。これを250℃1000h高温保持した結果、更にZnと下地部材との反応が進んだことによって、接続部に反応による体積変化に伴う空隙が導入されたため、軽度の力で半導体素子が外れてしまった。そのため、温度サイクル試験は実施できなかった。
(比較例4)
上記の実施例1-17と同様のプロセスでパワー半導体モジュールの組立を実施した。また、同様に組立後の接続状態を調査した。その結果、表1のように、Pb-5Snでは接続部の80%以上の面積で接続でき、更に部材のNiメタライズも残存させることができた。そこで、250℃1000hの高温保持を実施したところ、図12のように、部材のNiメタライズ103が残存しているが、接続界面に形成されたNi-Sn化合物106が保持前に比べて厚く成長しており、Ni-Sn化合物とNiめっき界面に空隙107が生成していた。これについても比較例3と同様に、軽度の力で半導体素子が外れてしまったため、温度サイクル試験は実施できなかった。
(比較例5)
上記の実施例1-17と同様のプロセスでパワー半導体モジュールの組立を実施した。また、同様に組立後の接続状態を調査した。Zn/Al/Zn積層型接続材料は、特許文献1で開示された接続材料である。その結果、表1のように、Zn/Al/Zn積層型接続材料では接続部の80%以上の面積で接続でき、更に部材のNiメタライズも残存させることができた。そこで、250℃1000hの高温保持試験を実施したところ、保持後も部材のNiメタライズが消失することなく維持され、比較例4のような空隙も発生しなかった。接続部の硬さについて評価した結果、図2のように、保持前の硬さに対して20%以上の硬化が生じた。これについて、-40℃⇔250℃の温度サイクル試験を500サイクル実施して断面観察を実施した結果、Si割れが発生していた。接続部材料内のクラック進展領域は接続面積の80%未満であったが、Si割れによって接続材料への熱衝撃が緩和した可能性があるためデータとして採用しなかった。
For these power semiconductor modules, we investigated the connection status during assembly, conducted a high temperature holding test at 250 ° C for 1000h, then conducted a temperature cycle test from -40 ° C to 250 ° C, and investigated the connection status after each test. . As for the connection status at the time of assembly, Ni metallized bite of unconnected and components at the time of assembly was investigated. As a result, the case where unconnected was less than 20% of the connection area was indicated as “◯”, the case where it was 20% or more as “X”, the case where Ni metallization remained as “O”, and the case where disappeared as “X”. As a result of evaluating these for Example 1-17, the unconnected area is less than 20% in any case, and the Ni metallized 103 formed on the
(Comparative Examples 1 and 2)
The power semiconductor module was assembled in the same process as in Example 1-17 above. The connecting material is a Zn—Al based alloy that has been dissolved before connection, and there is no Al phase. Similarly, the connection state after connection was investigated. As a result, as shown in Table 1, in both cases of Zn-4Al and Zn-6Al, 80% or more of the connected portions were not connected. This is presumably because the surface of the connecting material was a Zn-Al alloy before connection, and Al was oxidized, so that wettability could not be ensured. Since connection was not possible, connection reliability evaluation could not be performed.
(Comparative Example 3)
The power semiconductor module was assembled in the same process as in Example 1-17 above. Similarly, the connection state after connection was investigated. The connection material is almost pure Zn only. As a result, as shown in Table 1, pure Zn was able to connect with an area of 80% or more of the connection part, but the reaction between Zn and the member progressed at the connection interface, Ni metallization disappeared, and Zn and the base member (Cu plate) was reacting. As a result of maintaining this at a high temperature of 250 ° C. for 1000 hours, the reaction between Zn and the base member further progressed, and voids due to the volume change due to the reaction were introduced into the connection part, so the semiconductor element was detached with a slight force. . Therefore, the temperature cycle test could not be performed.
(Comparative Example 4)
The power semiconductor module was assembled in the same process as in Example 1-17 above. Similarly, the connection state after assembly was investigated. As a result, as shown in Table 1, Pb-5Sn was able to be connected with an area of 80% or more of the connecting portion, and Ni metallization of the member could be left. Therefore, when high temperature holding at 250 ° C. for 1000 h was performed, the Ni metallized 103 of the member remained as shown in FIG. 12, but the Ni—
(Comparative Example 5)
The power semiconductor module was assembled in the same process as in Example 1-17 above. Similarly, the connection state after assembly was investigated. The Zn / Al / Zn multilayer connection material is a connection material disclosed in
1 半導体素子、2 支持部材、3 Al系相、4 Zn-Al合金層、5 Zn系層、6 CuもしくはNiもしくはAg等、7 金属間化合物、8 Alワイヤ、9 セラミックス基板、100 ロール、101 膨れ、102 Ni-Al系化合物、103 Niめっき、104 部材(Cu)、105 Pb-5Sn、106 Ni-Sn化合物、107 空隙。
DESCRIPTION OF
Claims (18)
前記第一の主面の反対側の第二の主面とを備えた接続材料において、
Zn系層と、
Al系相とを備え、
面方向のある領域では、前記第一の主面から前記第二の主面まで延在する前記Zn系層で形成されていることを特徴とする接続材料。 The first main plane,
In a connecting material comprising a second main surface opposite to the first main surface,
A Zn-based layer;
With Al phase,
In a certain region in the plane direction, the connection material is formed of the Zn-based layer extending from the first main surface to the second main surface.
前記ある領域と異なる他の領域では、前記第一の主面及び前記第二のの表面は前記Zn層で形成され、前記第一の主面と前記第二の主面との間に前記Al系相を有していることを特徴とする接続材料。 In claim 1,
In another region different from the certain region, the first main surface and the second surface are formed of the Zn layer, and the Al is interposed between the first main surface and the second main surface. A connection material characterized by having a system phase.
浮島状の複数の前記Al系相を有していることを特徴とする接続材料。 In claim 1 or claim 2,
A connection material having a plurality of floating island-like Al phases.
Zn系層のAl含有率が0〜0.01mass%で、250℃より高い固相線温度を有することを特徴とする接続材料。 In any one of Claims 1 thru | or 3,
A connection material, wherein the Al content of the Zn-based layer is 0 to 0.01 mass% and has a solidus temperature higher than 250 ° C.
前記Al系相のAl含有率が99〜100%であることを特徴とする接続材料。 In any one of Claims 1 thru | or 4,
A connection material, wherein the Al content of the Al phase is 99 to 100%.
前記Al系相の0.2%耐力が30N/mm2以下であることを特徴とする接続材料。 In claim 5,
A connection material, wherein the Al-based phase has a 0.2% proof stress of 30 N / mm 2 or less.
前記Al系相の平均径は、50μm以上であることを特徴とする接続材料。 In any one of Claims 1 thru | or 6.
The connection material according to claim 1, wherein an average diameter of the Al phase is 50 μm or more.
前記接続材料に対するAl系相の割合が6mass%より高く25mass%未満であることを特徴とする接続材料。 In any one of Claims 1 thru | or 7,
The connection material, wherein a ratio of the Al phase to the connection material is higher than 6 mass% and lower than 25 mass%.
前記Zn系層に覆われたAl系相の周囲80%以上がAl酸化物の膜を介さずに、前記Zn系層に接続していることを特徴とする接続材料。 In any one of Claims 1 thru | or 8.
A connection material, wherein 80% or more of the periphery of the Al phase covered by the Zn layer is connected to the Zn layer without an Al oxide film interposed therebetween.
前記工程では、前記第一のZn系層と第二のZn系層とが接続されることを特徴とする接続材料の製造方法。 Including a step of rolling or pressure forming by sandwiching a plurality of Al-based phases between the first Zn-based layer and the second Zn-based layer,
In the step, the first Zn-based layer and the second Zn-based layer are connected to each other.
前記圧延は、冷間圧延または熱間圧延であることを特徴とする接続材料の製造方法。 In claim 10,
The method for producing a connecting material, wherein the rolling is cold rolling or hot rolling.
前記圧延の加工度が90%以上であることを特徴とする接続材料の製造方法。 In claim 10 or claim 11,
A method for producing a connection material, wherein the rolling degree of processing is 90% or more.
第二の部材と、
当該第一の部材と第二の部材とを接続する接続材料を備えた半導体装置であって、
前記接続材料は、
Zn-Al系合金層と、
当該Zn−Al系合金層の内部に形成された複数のAl系相とを備え、
前記Zn−Al系合金層が前記第一の部材と前記第二の部材とを接合していることを特徴とする半導体装置。 A first member;
A second member;
A semiconductor device comprising a connection material for connecting the first member and the second member,
The connecting material is
Zn-Al alloy layer,
A plurality of Al-based phases formed inside the Zn-Al-based alloy layer,
The semiconductor device, wherein the Zn—Al-based alloy layer joins the first member and the second member.
前記第一の部材は、半導体素子であり、
前記第二の部材は、基板、リードまたは電極のいずれかであることを特徴とする半導体装置。 In claim 13,
The first member is a semiconductor element;
The semiconductor device, wherein the second member is any one of a substrate, a lead, and an electrode.
前記接続材料の、前記第一または前記第二の部材との界面に、Alを主成分とする金属間化合物を備えることを特徴とする半導体装置。 In claim 13 or claim 14,
A semiconductor device comprising an intermetallic compound containing Al as a main component at an interface between the connection material and the first or second member.
前記設置工程後に、前記第一及び第二の部材と前記接続材料とに加熱処理を行って接続する接続工程と、
を含む半導体装置の製造方法。 An installation step of installing the connection material according to any one of claims 1 to 9 between the first member and the second member;
After the installation step, a connection step of connecting the first and second members and the connection material by performing a heat treatment;
A method of manufacturing a semiconductor device including:
前記接続工程では、前記加熱処理により前記接続材料のZn系層が溶融しZn−Al系合金層となるとともに、前記Al系相の一部は前記加熱処理でも溶融せず固体の状態であることを特徴とする半導体装置の製造方法。 In claim 16,
In the connecting step, the Zn layer of the connecting material is melted by the heat treatment to become a Zn-Al alloy layer, and a part of the Al phase is not melted by the heat treatment and is in a solid state. A method of manufacturing a semiconductor device.
前記接続工程では、前記Al系相は全部溶融することを特徴とする半導体装置の製造方法。 In claim 16,
In the connecting step, the Al-based phase is entirely melted.
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JPH03114691A (en) * | 1989-09-28 | 1991-05-15 | Showa Alum Corp | Composite brazing filler metal |
JPH06218580A (en) * | 1993-01-27 | 1994-08-09 | Tanaka Denshi Kogyo Kk | Production of composite |
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JPS5850194A (en) * | 1981-09-22 | 1983-03-24 | Toshiba Corp | Brazing filler metal for diffusion bonding and its manufacture |
JPH03114691A (en) * | 1989-09-28 | 1991-05-15 | Showa Alum Corp | Composite brazing filler metal |
JPH06218580A (en) * | 1993-01-27 | 1994-08-09 | Tanaka Denshi Kogyo Kk | Production of composite |
JP2002307188A (en) * | 2001-04-11 | 2002-10-22 | Hitachi Ltd | PRODUCT USING Zn-Al BASED SOLDER |
JP2009285732A (en) * | 2009-08-12 | 2009-12-10 | Hitachi Ltd | Bonding material, manufacturing method of bonding material and semiconductor device |
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US9393645B2 (en) | 2010-08-31 | 2016-07-19 | Hitachi Metals, Ltd. | Junction material, manufacturing method thereof, and manufacturing method of junction structure |
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